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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Transistor Element Material Manufacturer Package Identifier Current - Continuous Drain (Id) @ 25℃ Number of Elements Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Resistance Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Qualification Status Configuration Row Spacing Number of Channels Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max FET Type Transistor Application Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Halogen Free Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Continuous Drain Current (ID) Threshold Voltage JEDEC-95 Code Gate to Source Voltage (Vgs) Max Dual Supply Voltage Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) Dual Supply Voltage Input Capacitance DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology Power Dissipation-Max (Abs) Recovery Time Max Junction Temperature (Tj) FET Feature Drain to Source Resistance Rds On Max Nominal Vgs Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
Infineon Technologies IRF7902TRPBF
Mfr. Тип
IRF7902TRPBF
Anlielectronics Тип

Infineon Technologies
MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 12 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - SILICON - 6.4A 9.7A 2 - -55°C~150°C TJ Tape & Reel (TR) 1999 HEXFET® e3 - Obsolete 1 (Unlimited) 8 - EAR99 22.6MOhm Matte Tin (Sn) - - - - 2W - GULL WING - - - - IRF7902PBF - - - - - - - Dual ENHANCEMENT MODE 2W - - 1.4W 2W 2 N-Channel (Dual) SWITCHING 22.6m Ω @ 6.4A, 10V 2.25V @ 25μA - 580pF @ 15V 6.9nC @ 4.5V - - - - 9.7A - - 20V - - - 30V - - - - 7.3 mJ METAL-OXIDE SEMICONDUCTOR - - - Logic Level Gate - - - 1.4986mm 4.9784mm 3.9878mm No - ROHS3 Compliant Lead Free
    IRF7902TRPBF
    IRF7902TRPBF

    Infineon Technologies
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    ON Semiconductor FDMS7602S
    Mfr. Тип
    FDMS7602S
    Anlielectronics Тип

    		ON Semiconductor
    MOSFET 2N-CH 30V 12A/17A POWER56
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 16 Weeks ACTIVE (Last Updated: 4 days ago) Gold Surface Mount Surface Mount 8-PowerWDFN - 8 - 211mg SILICON - 12A 17A 2 27 ns -55°C~150°C TJ Tape & Reel (TR) - PowerTrench® e4 yes Active 1 (Unlimited) 6 - EAR99 7.5MOhm - - - - - 2.5W - - - - - - - - - R-PDSO-N6 - - - - - ENHANCEMENT MODE 1W DRAIN SOURCE - - 2 N-Channel (Dual) SWITCHING 7.5m Ω @ 12A, 10V 3V @ 250μA - 1750pF @ 15V 28nC @ 10V 3.8ns - - 3.2 ns 17A 1.8V - 20V - - - 30V 40A - - - - METAL-OXIDE SEMICONDUCTOR - - - Logic Level Gate - - 1.8 V 700μm 5mm 6mm No No SVHC ROHS3 Compliant Lead Free
      FDMS7602S
      FDMS7602S

      ON Semiconductor
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Infineon Technologies IRF7504TRPBF
      Mfr. Тип
      IRF7504TRPBF
      Anlielectronics Тип

      		Infineon Technologies
      MOSFET 2P-CH 20V 1.7A MICRO8
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 12 Weeks - Tin Surface Mount Surface Mount 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) - 8 - - SILICON - 1.7A 2 38 ns -55°C~150°C TJ Tape & Reel (TR) 1997 HEXFET® e3 - Not For New Designs 2 (1 Year) 8 - - 270mOhm - - - LOGIC LEVEL COMPATIBLE -20V 1.25W - GULL WING - - -1.7A - IRF7504PBF - - - - - - - Dual ENHANCEMENT MODE 1.25W - 9.1 ns - 2 P-Channel (Dual) SWITCHING 270m Ω @ 1.2A, 4.5V 700mV @ 250μA - 240pF @ 15V 8.2nC @ 4.5V 35ns 20V - 43 ns -1.7A -700mV - 12V - - - -20V 9.6A - - - - METAL-OXIDE SEMICONDUCTOR - - - Logic Level Gate - - - 860μm 3mm 3mm No No SVHC ROHS3 Compliant Lead Free
        IRF7504TRPBF
        IRF7504TRPBF

        Infineon Technologies
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Diodes Incorporated DMG6602SVT-7
        Mfr. Тип
        DMG6602SVT-7
        Anlielectronics Тип

        		Diodes Incorporated
        N & P Channel 30 V 60 mOhm Complementary Pair Enhancement Mode Mosfet-TSOT-23-6
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 - - - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - 6 - - SILICON - 3.4A 2.8A 2 13 ns -55°C~150°C TJ Tape & Reel (TR) 2012 - e3 yes Not For New Designs 1 (Unlimited) 6 - EAR99 95mOhm Matte Tin (Sn) - - HIGH RELIABILITY - 840mW DUAL GULL WING 260 - - 40 DMG6602 6 - - - - - - - ENHANCEMENT MODE 840mW - 3 ns - N and P-Channel SWITCHING 60m Ω @ 3.1A, 10V 2.3V @ 250μA - 400pF @ 15V 13nC @ 10V 5ns - N-CHANNEL AND P-CHANNEL 3 ns 2.8A - - 20V - 3.4A - 30V 13A - - - - METAL-OXIDE SEMICONDUCTOR - - 150°C Logic Level Gate, 4.5V Drive - - - 1mm 2.9mm 1.6mm No No SVHC ROHS3 Compliant Lead Free
          DMG6602SVT-7
          DMG6602SVT-7

          Diodes Incorporated
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          ON Semiconductor NTHD3102CT1G
          Mfr. Тип
          NTHD3102CT1G
          Anlielectronics Тип

          		ON Semiconductor
          MOSFET 20V 5.5A/-4.2A Complementary
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 7 Weeks ACTIVE (Last Updated: 4 days ago) - - Surface Mount 8-SMD, Flat Lead YES 8 - 4.535924g SILICON - 4A 3.1A 2 15.7 ns -55°C~150°C TJ Tape & Reel (TR) 2005 - e3 yes Active 1 (Unlimited) 8 - EAR99 - Tin (Sn) - - - 20V 600mW - C BEND 260 - 5.5A 40 NTHD3102C 8 - - - - - - Dual ENHANCEMENT MODE 600mW - 7.2 ns 1.1W N and P-Channel SWITCHING 45m Ω @ 4.4A, 4.5V 1.2V @ 250μA - 510pF @ 10V 7.9nC @ 4.5V 16.9ns - N-CHANNEL AND P-CHANNEL 16.9 ns 5.5A 400mV - 8V - 4A 0.045Ohm -20V 16A - - - - METAL-OXIDE SEMICONDUCTOR - - - Logic Level Gate - - - 1.1mm 3.1mm 1.7mm No No SVHC ROHS3 Compliant Lead Free
            NTHD3102CT1G
            NTHD3102CT1G

            ON Semiconductor
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            ON Semiconductor 2N7002DW
            Mfr. Тип
            2N7002DW
            Anlielectronics Тип

            		ON Semiconductor
            MOSFET 2N-CH 60V 0.115A SC70-6
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 8 Weeks ACTIVE (Last Updated: 2 days ago) Tin Surface Mount Surface Mount 6-TSSOP, SC-88, SOT-363 - 6 SC-88 (SC-70-6) 28mg - - 115mA 2 12.5 ns -55°C~150°C TJ Tape & Reel (TR) 2008 - - - Active 1 (Unlimited) - - - 7.5Ohm - 150°C -55°C - - 200mW - - - - - - - - - - - - - 2 Dual - 200mW - 5.85 ns 200mW 2 N-Channel (Dual) - 7.5Ohm @ 50mA, 5V 2V @ 250μA - 50pF @ 25V - - 60V - - 115mA 1.76V - 20V - - - 78V - - 50pF - - - - - 150°C Logic Level Gate 2Ohm 7.5 Ω 1.76 V 1.1mm 2mm 1.25mm No No SVHC ROHS3 Compliant Lead Free
              2N7002DW
              2N7002DW

              ON Semiconductor
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Infineon Technologies IRF9358TRPBF
              Mfr. Тип
              IRF9358TRPBF
              Anlielectronics Тип

              		Infineon Technologies
              MOSFET 2P-CH 30V 9.2A 8SOIC
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 12 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - SILICON - - 2 146 ns -55°C~150°C TJ Tape & Reel (TR) 2008 HEXFET® e3 - Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - - - - 2W - GULL WING - - - - IRF9358PBF - - - - - - - Dual ENHANCEMENT MODE 2W - 5.7 ns - 2 P-Channel (Dual) SWITCHING 16.3m Ω @ 9.2A, 10V 2.4V @ 25μA - 1740pF @ 25V 38nC @ 10V 7.2ns 30V - 69 ns 9.2A -1.8V MS-012AA 20V - - 0.0163Ohm -30V 73A - - - 210 mJ METAL-OXIDE SEMICONDUCTOR - - - Logic Level Gate - - -1.8 V 1.5mm 5mm 4mm No No SVHC ROHS3 Compliant Lead Free
                IRF9358TRPBF
                IRF9358TRPBF

                Infineon Technologies
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                ON Semiconductor FDS8958A-F085
                Mfr. Тип
                FDS8958A-F085
                Anlielectronics Тип

                		ON Semiconductor
                MOSFET N/P-CH 30V 7A/5A 8SOIC
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 5 Weeks ACTIVE (Last Updated: 4 days ago) - - Surface Mount 8-SOIC (0.154, 3.90mm Width) YES - - - SILICON - 7A 5A 2 - -55°C~150°C TJ Tape & Reel (TR) 2007 Automotive, AEC-Q101, PowerTrench® - yes Active 1 (Unlimited) 8 - - - - - - - - - DUAL GULL WING NOT SPECIFIED - - NOT SPECIFIED - - - R-PDSO-G8 Not Qualified SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - - - 900mW N and P-Channel SWITCHING 28m Ω @ 7A, 10V 3V @ 250μA - 575pF @ 15V 16nC @ 10V - 30V N-CHANNEL AND P-CHANNEL - - - - - - 7A 0.028Ohm - 20A - - 30V 54 mJ METAL-OXIDE SEMICONDUCTOR 2W - - Logic Level Gate - - - - - - - - ROHS3 Compliant -
                  FDS8958A-F085
                  FDS8958A-F085

                  ON Semiconductor
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  ON Semiconductor NTLJD3119CTBG
                  Mfr. Тип
                  NTLJD3119CTBG
                  Anlielectronics Тип

                  		ON Semiconductor
                  MOSFET N/P-CH 20V 6WDFN
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 9 Weeks ACTIVE (Last Updated: 6 days ago) Tin - Surface Mount 6-WDFN Exposed Pad YES 6 - - SILICON - 2.6A 2.3A 2 13.7 ns -55°C~150°C TJ Tape & Reel (TR) 2005 µCool™ e3 yes Active 1 (Unlimited) 6 - EAR99 - - - - - - 710mW - - 260 - - 40 NTLJD3119C 6 - - - - - - Dual ENHANCEMENT MODE 710mW - 5.2 ns - N and P-Channel - 65m Ω @ 3.8A, 4.5V 1V @ 250μA - 271pF @ 10V 3.7nC @ 4.5V 13.2ns 20V N-CHANNEL AND P-CHANNEL 13.2 ns 4.6A 700mV - 8V - 3.8A - -20V 18A - - - - METAL-OXIDE SEMICONDUCTOR - - - Logic Level Gate - - 700 mV 750μm 2mm 2mm No No SVHC ROHS3 Compliant Lead Free
                    NTLJD3119CTBG
                    NTLJD3119CTBG

                    ON Semiconductor
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Infineon Technologies IPG20N04S4L08ATMA1
                    Mfr. Тип
                    IPG20N04S4L08ATMA1
                    Anlielectronics Тип

                    		Infineon Technologies
                    Trans MOSFET N-CH 40V 20A 8-Pin TDSON EP
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 12 Weeks - - Surface Mount Surface Mount 8-PowerVDFN - 8 - - SILICON - - 2 40 ns -55°C~175°C TJ Tape & Reel (TR) 2010 Automotive, AEC-Q101, OptiMOS™ e3 - Active 1 (Unlimited) 8 - EAR99 - Tin (Sn) - - LOGIC LEVEL COMPATIBLE - 54W - FLAT NOT SPECIFIED not_compliant - NOT SPECIFIED - - - - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - - 7 ns 54W 2 N-Channel (Dual) - 8.2m Ω @ 17A, 10V 2.2V @ 22μA Halogen Free 3050pF @ 25V 39nC @ 10V 3ns - - 20 ns 20A - - 16V 40V - - - - - - - 145 mJ METAL-OXIDE SEMICONDUCTOR - - - Logic Level Gate - - - - - - - - ROHS3 Compliant Contains Lead
                      IPG20N04S4L08ATMA1
                      IPG20N04S4L08ATMA1

                      Infineon Technologies
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      ON Semiconductor FDS4897AC
                      Mfr. Тип
                      FDS4897AC
                      Anlielectronics Тип

                      		ON Semiconductor
                      MOSFET N/P-CH 40V 6.1A/5.2A 8SO
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 12 Weeks ACTIVE (Last Updated: 1 day ago) - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 187mg - - 6.1A 5.2A 2 17 ns -55°C~150°C TJ Tape & Reel (TR) 2006 PowerTrench® e3 yes Active 1 (Unlimited) 8 - EAR99 26MOhm Tin (Sn) - - - - 900mW DUAL GULL WING NOT SPECIFIED - - NOT SPECIFIED - - - - Not Qualified - - - - - 2W - 8 ns - N and P-Channel - 26m Ω @ 6.1A, 10V 3V @ 250μA - 1055pF @ 20V 21nC @ 10V 3ns - N-CHANNEL AND P-CHANNEL 3 ns 5.2A 2V - 20V - 6.1A - 40V - - - - - METAL-OXIDE SEMICONDUCTOR - - - Logic Level Gate - - - 1.575mm 4.9mm 3.9mm - No SVHC ROHS3 Compliant Lead Free
                        FDS4897AC
                        FDS4897AC

                        ON Semiconductor
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Infineon Technologies IPG20N04S4L07ATMA1
                        Mfr. Тип
                        IPG20N04S4L07ATMA1
                        Anlielectronics Тип

                        		Infineon Technologies
                        MOSFET N-Channel 40V MOSFET
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 12 Weeks - - Surface Mount Surface Mount 8-PowerVDFN - 8 - - SILICON - - 2 50 ns -55°C~175°C TJ Tape & Reel (TR) 2010 Automotive, AEC-Q101, OptiMOS™ e3 - Active 1 (Unlimited) 8 - EAR99 - Tin (Sn) - - LOGIC LEVEL COMPATIBLE - 65W - FLAT NOT SPECIFIED not_compliant - NOT SPECIFIED - - - - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - - 9 ns 65W 2 N-Channel (Dual) - 7.2m Ω @ 17A, 10V 2.2V @ 30μA Halogen Free 3980pF @ 25V 50nC @ 10V 4ns - - 25 ns 20A - - 16V 40V - 0.0072Ohm - - - - - 230 mJ METAL-OXIDE SEMICONDUCTOR - - - Logic Level Gate - - - - - - - - ROHS3 Compliant Contains Lead
                          IPG20N04S4L07ATMA1
                          IPG20N04S4L07ATMA1

                          Infineon Technologies
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Diodes Incorporated DMC2400UV-7
                          Mfr. Тип
                          DMC2400UV-7
                          Anlielectronics Тип

                          		Diodes Incorporated
                          MOSFET N/P-CH 20V SOT563
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 16 Weeks - Tin Surface Mount Surface Mount SOT-563, SOT-666 - 6 - - SILICON - 1.03A 700mA 1 13.74 ns -55°C~150°C TJ Tape & Reel (TR) 2011 - e3 yes Active 1 (Unlimited) 6 - EAR99 - - - - HIGH RELIABILITY - 450mW DUAL FLAT - - - - DMC2400 6 - - - - - 2 - ENHANCEMENT MODE 450mW - 4.06 ns - N and P-Channel SWITCHING 480m Ω @ 200mA, 5V 900mV @ 250μA - 37.1pF @ 10V 0.5nC @ 4.5V - - N-CHANNEL AND P-CHANNEL - 1.03A - - - - - - 20V - - - - - METAL-OXIDE SEMICONDUCTOR - - 150°C Logic Level Gate - - - 600μm 1.7mm 1.25mm No No SVHC ROHS3 Compliant Lead Free
                            DMC2400UV-7
                            DMC2400UV-7

                            Diodes Incorporated
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Infineon Technologies IRF7104TRPBF
                            Mfr. Тип
                            IRF7104TRPBF
                            Anlielectronics Тип

                            		Infineon Technologies
                            MOSFET 2P-CH 20V 2.3A 8-SOIC
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 12 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - SILICON - 2.3A 2 42 ns -55°C~150°C TJ Tape & Reel (TR) 1997 HEXFET® e3 - Active 1 (Unlimited) 8 SMD/SMT EAR99 250mOhm Matte Tin (Sn) - - ULTRA LOW RESISTANCE -20V 2W - GULL WING - - -2.3A - IRF7104PBF - - - - - 6.3 mm - Dual ENHANCEMENT MODE 2W - 12 ns - 2 P-Channel (Dual) SWITCHING 250m Ω @ 1A, 10V 3V @ 250μA - 290pF @ 15V 25nC @ 10V 16ns 20V - 30 ns -2.3A -3V - 12V - - - -20V 10A -20V - - - METAL-OXIDE SEMICONDUCTOR - 100 ns - Logic Level Gate - - -3 V 1.4986mm 4.9784mm 3.9878mm No No SVHC ROHS3 Compliant Lead Free
                              IRF7104TRPBF
                              IRF7104TRPBF

                              Infineon Technologies
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Diodes Incorporated DMP2240UDM-7
                              Mfr. Тип
                              DMP2240UDM-7
                              Anlielectronics Тип

                              		Diodes Incorporated
                              MOSFET 2P-CH 20V 2A SOT-26
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 16 Weeks - Tin Surface Mount Surface Mount SOT-23-6 - 6 - - SILICON SOT26 (SC74R) 2A 2 55.34 ns -65°C~150°C TJ Tape & Reel (TR) 2010 - e3 yes Active 1 (Unlimited) 6 - EAR99 - - - - HIGH RELIABILITY - 600mW - GULL WING 260 - - 40 DMP2240UDM 6 - - - - - - Dual ENHANCEMENT MODE 600mW - 11.51 ns - 2 P-Channel (Dual) SWITCHING 150m Ω @ 2A, 4.5V 1V @ 250μA - 320pF @ 16V - 12.09ns 20V - 12.09 ns -2A -1V - 12V - 2A 0.15Ohm -20V - - - - - METAL-OXIDE SEMICONDUCTOR - - 150°C Logic Level Gate - - - 1.4mm 3mm 1.6mm No No SVHC ROHS3 Compliant Lead Free
                                DMP2240UDM-7
                                DMP2240UDM-7

                                Diodes Incorporated
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                ON Semiconductor FDG6308P
                                Mfr. Тип
                                FDG6308P
                                Anlielectronics Тип

                                		ON Semiconductor
                                Trans MOSFET P-CH 20V 0.6A 6-Pin SC-70 T/R
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 10 Weeks ACTIVE (Last Updated: 2 days ago) - Surface Mount Surface Mount 6-TSSOP, SC-88, SOT-363 - 6 - 28mg SILICON - - 2 7 ns -55°C~150°C TJ Tape & Reel (TR) - PowerTrench® e3 yes Active 1 (Unlimited) 6 - EAR99 400MOhm Tin (Sn) - - - -20V 300mW - GULL WING - - -600mA - - - - - - - - - Dual ENHANCEMENT MODE 300mW - 5 ns - 2 P-Channel (Dual) SWITCHING 400m Ω @ 600mA, 4.5V 1.5V @ 250μA - 153pF @ 10V 2.5nC @ 4.5V 15ns 20V - 15 ns 600mA - - 8V - - - -20V - - - - - METAL-OXIDE SEMICONDUCTOR - - - Logic Level Gate - - - 1mm 2mm 1.25mm No - ROHS3 Compliant Lead Free
                                  FDG6308P
                                  FDG6308P

                                  ON Semiconductor
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  ON Semiconductor FDS6898AZ
                                  Mfr. Тип
                                  FDS6898AZ
                                  Anlielectronics Тип

                                  		ON Semiconductor
                                  MOSFET 2N-CH 20V 9.4A 8SOIC
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 10 Weeks ACTIVE (Last Updated: 2 days ago) Tin Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 187mg SILICON - - 2 34 ns -55°C~150°C TJ Tape & Reel (TR) - PowerTrench® e3 yes Active 1 (Unlimited) 8 SMD/SMT EAR99 14MOhm - - - ESD PROTECTED 20V 2W - GULL WING NOT SPECIFIED - 9.4A NOT SPECIFIED - - - - Not Qualified - - - Dual ENHANCEMENT MODE 2W - 10 ns 900mW 2 N-Channel (Dual) SWITCHING 14m Ω @ 9.4A, 4.5V 1.5V @ 250μA - 1821pF @ 10V 23nC @ 4.5V 15ns - - 16 ns 9.4A 1V - 12V - - - 20V - 20V - - - METAL-OXIDE SEMICONDUCTOR - - - Logic Level Gate - - 1 V 1.5mm 5mm 4mm - No SVHC ROHS3 Compliant Lead Free
                                    FDS6898AZ
                                    FDS6898AZ

                                    ON Semiconductor
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    ON Semiconductor NTGD3148NT1G
                                    Mfr. Тип
                                    NTGD3148NT1G
                                    Anlielectronics Тип

                                    		ON Semiconductor
                                    MOSFET 2N-CH 20V 3A 6TSOP
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 15 Weeks ACTIVE (Last Updated: 2 days ago) - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - 6 - - SILICON - - 2 12.8 ns -50°C~150°C TJ Tape & Reel (TR) 2008 - e3 yes Active 1 (Unlimited) 6 - EAR99 - Tin (Sn) - - - - 900mW - GULL WING NOT SPECIFIED - - NOT SPECIFIED NTGD3148N 6 - - Not Qualified - - - Dual ENHANCEMENT MODE 1.1W - - - 2 N-Channel (Dual) SWITCHING 70m Ω @ 3.5A, 4.5V 1.5V @ 250μA - 300pF @ 10V 3.8nC @ 4.5V 11.2ns 20V - 1.6 ns 3A - - 12V - 3A 0.07Ohm 20V - - - - - METAL-OXIDE SEMICONDUCTOR - - - Logic Level Gate - - - - - - - - ROHS3 Compliant Lead Free
                                      NTGD3148NT1G
                                      NTGD3148NT1G

                                      ON Semiconductor
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      Infineon Technologies IRL6372TRPBF
                                      Mfr. Тип
                                      IRL6372TRPBF
                                      Anlielectronics Тип

                                      		Infineon Technologies
                                      MOSFET 2N-CH 30V 8.1A 8SOIC
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 15 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - SILICON - - 2 34 ns -55°C~150°C TJ Tape & Reel (TR) 2011 HEXFET® e3 - Not For New Designs 1 (Unlimited) 8 - EAR99 17.9MOhm Matte Tin (Sn) - - HIGH RELIABILITY - 2W - GULL WING - - - - IRL6372PBF - - - - - - - Dual ENHANCEMENT MODE 2W - 5.9 ns - 2 N-Channel (Dual) SWITCHING 17.9m Ω @ 8.1A, 4.5V 1.1V @ 10μA - 1020pF @ 25V 11nC @ 4.5V 13ns 30V - 15 ns 8.1A - - 12V - - - 30V 65A - - - - METAL-OXIDE SEMICONDUCTOR - - - Logic Level Gate - - 1.1 V - - - No No SVHC ROHS3 Compliant Lead Free
                                        IRL6372TRPBF
                                        IRL6372TRPBF

                                        Infineon Technologies
                                        RoHS :
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                                        Diodes Incorporated DMN6040SSD-13
                                        Mfr. Тип
                                        DMN6040SSD-13
                                        Anlielectronics Тип

                                        		Diodes Incorporated
                                        MOSFET 2N-CH 60V 5A 8SO
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 18 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON - - 2 20.1 ns -55°C~150°C TJ Cut Tape (CT) 2013 - e3 yes Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - - HIGH RELIABILITY - 1.7W - GULL WING 260 - - 40 - - AEC-Q101 - - - - 2 Dual ENHANCEMENT MODE 1.3W - 6.6 ns - 2 N-Channel (Dual) SWITCHING 40m Ω @ 4.5A, 10V 3V @ 250μA - 1287pF @ 25V 22.4nC @ 10V 8.1ns 60V - 4 ns 5A - - 20V - 5A 0.04Ohm 60V - - - - - METAL-OXIDE SEMICONDUCTOR - - - Logic Level Gate - - - 1.5mm 4.95mm 3.95mm - No SVHC ROHS3 Compliant Lead Free
                                          DMN6040SSD-13
                                          DMN6040SSD-13

                                          Diodes Incorporated
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - FETs, MOSFETs - Arrays definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - Arrays Product Listing: IRF7902TRPBF,FDMS7602S,IRF7504TRPBF,DMG6602SVT-7,NTHD3102CT1G.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - FETs, MOSFETs - Arrays has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.