- Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - FETs, MOSFETs - Arrays
| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Weight | Transistor Element Material | Current - Continuous Drain (Id) @ 25℃ | Number of Elements | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Resistance | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Capacitance | Voltage - Rated DC | Max Power Dissipation | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current Rating | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Number of Channels | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | Power - Max | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Halogen Free | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Fall Time (Typ) | Continuous Drain Current (ID) | JEDEC-95 Code | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | Input Capacitance | DS Breakdown Voltage-Min | FET Technology | FET Feature | Drain to Source Resistance | Rds On Max | Nominal Vgs | Feedback Cap-Max (Crss) | Height | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипPMDPB70XP,115Anlielectronics Тип | Nexperia USA Inc. |
PMDPB70XP - 30 V, dual P-channel Trench MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | - | Surface Mount | 6-UDFN Exposed Pad | - | 6 | - | - | - | - | 2 | 112 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | - | e3 | - | Active | 1 (Unlimited) | - | - | - | Tin (Sn) | - | - | - | - | - | 490mW | - | - | - | - | - | - | 6 | - | - | - | - | - | Dual | - | 1.17W | - | 3 ns | - | 2 P-Channel (Dual) | - | 87m Ω @ 2.9A, 4.5V | 1V @ 250μA | - | 680pF @ 15V | 7.8nC @ 5V | 15ns | 30V | 48 ns | 2.9A | - | 12V | -30V | - | - | -30V | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | - | ||
| PMDPB70XP,115 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMP6110SSD-13Anlielectronics Тип | Diodes Incorporated |
MOSFET 2P-CH 60V 3.3A 8SO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | - | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | - | - | SILICON | - | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | - | e3 | - | Active | 1 (Unlimited) | 8 | EAR99 | - | Matte Tin (Sn) | - | - | - | - | - | 1.2W | GULL WING | NOT SPECIFIED | - | - | NOT SPECIFIED | - | - | - | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | 1.2W | 2 P-Channel (Dual) | SWITCHING | 105m Ω @ 4.5A, 10V | 3V @ 250μA | - | 969pF @ 30V | 17.2nC @ 10V | - | 60V | - | 3.3A | - | - | - | - | 0.105Ohm | - | - | - | 60V | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| DMP6110SSD-13 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMN5L06VKQ-7Anlielectronics Тип | Diodes Incorporated |
MOSFET 2 N-CH 50V 280MA SOT563
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | - | Surface Mount | SOT-563, SOT-666 | YES | - | - | - | SILICON | 280mA Ta | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | Automotive, AEC-Q101 | - | - | Active | 1 (Unlimited) | 6 | - | - | - | - | - | HIGH RELIABILITY | - | - | - | FLAT | - | unknown | - | - | - | - | - | R-PDSO-F6 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | 250mW | 2 N-Channel (Dual) | SWITCHING | 2 Ω @ 50mA, 5V | 1.2V @ 250μA | - | 50pF @ 25V | - | - | 50V | - | - | - | - | - | 0.28A | 3Ohm | - | - | - | 50V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | 5 pF | - | - | - | - | - | RoHS Compliant | - | ||
| DMN5L06VKQ-7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBUK7K5R1-30E,115Anlielectronics Тип | Nexperia USA Inc. |
MOSFET 2N-CH 30V 40A LFPAK56D
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | - | Surface Mount | SOT-1205, 8-LFPAK56 | YES | 8 | - | - | SILICON | - | 2 | 19.5 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, TrenchMOS™ | e3 | - | Active | 1 (Unlimited) | 6 | - | - | - | - | - | AVALANCHE RATED | - | - | 68W | GULL WING | - | not_compliant | - | - | - | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | - | - | 2 | Dual | ENHANCEMENT MODE | - | DRAIN | 9.5 ns | 68W | 2 N-Channel (Dual) | SWITCHING | 5.1m Ω @ 10A, 10V | 4V @ 1mA | - | 2352pF @ 25V | 31.1nC @ 10V | 12.5ns | - | 13 ns | 40A | - | 20V | 30V | - | 0.0051Ohm | 30V | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| BUK7K5R1-30E,115 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDML7610SAnlielectronics Тип | ON Semiconductor |
Trans MOSFET N-CH 30V 12A/17A 8-Pin MLP EP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 23 Weeks | ACTIVE (Last Updated: 2 days ago) | Gold | Surface Mount | Surface Mount | 8-PowerWDFN | - | 8 | - | 300mg | SILICON | 12A 17A | 2 | 31 ns | -55°C~150°C TJ | Tape & Reel (TR) | - | PowerTrench® | - | yes | Active | 1 (Unlimited) | 6 | EAR99 | - | - | - | - | - | - | - | 2.2W | - | - | - | - | - | - | - | - | R-PDSO-N6 | - | - | - | Dual | ENHANCEMENT MODE | 2.2W | - | - | 800mW 900mW | 2 N-Channel (Dual) | SWITCHING | 7.5m Ω @ 12A, 10V | 3V @ 250μA | - | 1750pF @ 15V | 28nC @ 10V | - | - | - | 17A | - | 20V | - | 60A | 0.0075Ohm | 30V | 40A | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | 1.8 V | - | 750μm | 3mm | 4.5mm | No | No SVHC | ROHS3 Compliant | - | ||
| FDML7610S | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBSS138DWQ-7Anlielectronics Тип | Diodes Incorporated |
MOSFET 2NCH 50V 200MA SOT363
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 15 Weeks | - | - | Surface Mount | Surface Mount | 6-TSSOP, SC-88, SOT-363 | - | 6 | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2002 | Automotive, AEC-Q101 | e3 | - | Active | 1 (Unlimited) | - | EAR99 | - | Matte Tin (Sn) | - | - | - | - | - | 200mW | - | NOT SPECIFIED | - | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | 200mW | 2 N-Channel (Dual) | - | 3.5 Ω @ 220mA, 10V | 1.5V @ 250μA | - | 50pF @ 10V | - | - | 50V | - | 200mA | - | - | - | - | - | - | - | - | - | - | Standard | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| BSS138DWQ-7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMC31D5UDJ-7Anlielectronics Тип | Diodes Incorporated |
MOSFET 30V N & P Enh FET Low RDSon 22.2pF
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | Surface Mount | Surface Mount | SOT-963 | - | - | - | - | - | 220mA 200mA | - | 18.8 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | - | e3 | - | Active | 1 (Unlimited) | - | EAR99 | - | Matte Tin (Sn) | - | - | - | 22.2pF | - | 350mW | - | 260 | - | - | 30 | - | - | - | - | - | - | 2 | - | - | - | - | 3.5 ns | - | N and P-Channel | - | 1.5 Ω @ 100mA, 4.5V | 1V @ 250μA | - | 22.6pF @ 15V | 0.38nC @ 4.5V | 5.2ns | 30V | 8.7 ns | 200mA | - | 12V | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| DMC31D5UDJ-7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипZXMP6A16DN8TCAnlielectronics Тип | Diodes Incorporated |
MOSFET 2P-CH 60V 2.9A 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 17 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | - | - | - | SILICON | - | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | - | e3 | yes | Active | 1 (Unlimited) | 8 | EAR99 | - | Matte Tin (Sn) | - | - | - | - | - | 1.25W | GULL WING | 260 | - | - | 40 | - | 8 | - | R-PDSO-G8 | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | 1.25W | 2 P-Channel (Dual) | SWITCHING | 85m Ω @ 2.9A, 10V | 1V @ 250μA (Min) | - | 1021pF @ 30V | 24.2nC @ 10V | - | 60V | - | 2.9A | - | - | - | - | 0.085Ohm | - | 18.3A | - | 60V | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| ZXMP6A16DN8TC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNVMFD5875NLT1GAnlielectronics Тип | ON Semiconductor |
MOSFET 2N-CH 60V 7A SO8FL
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | ACTIVE, NOT REC (Last Updated: 6 days ago) | - | Surface Mount | Surface Mount | 8-PowerTDFN | - | 8 | - | - | - | - | - | - | -55°C~175°C TJ | Tape & Reel (TR) | 2015 | - | e3 | yes | Not For New Designs | 1 (Unlimited) | - | - | - | Tin (Sn) | - | - | - | - | - | 3.2W | - | - | not_compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 3.2W | 2 N-Channel (Dual) | - | 33m Ω @ 7.5A, 10V | 3V @ 250μA | - | 540pF @ 25V | 20nC @ 10V | - | 60V | - | 7A | - | - | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| NVMFD5875NLT1G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDMN63D8LDWQ-7Anlielectronics Тип | Diodes Incorporated |
MOSFET 2N-CH 30V 0.22A SOT363
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 15 Weeks | - | - | Surface Mount | Surface Mount | 6-TSSOP, SC-88, SOT-363 | - | - | SOT-363 | - | - | 220mA | - | - | -55°C~150°C TJ | Tape & Reel (TR) | - | - | - | - | Active | 1 (Unlimited) | - | - | - | - | 150°C | -55°C | - | - | - | 300mW | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 300mW | 2 N-Channel (Dual) | - | 2.8Ohm @ 250mA, 10V | 1.5V @ 250μA | - | 22pF @ 25V | 0.87nC @ 10V | - | 30V | - | 220mA | - | - | - | - | - | - | - | 22pF | - | - | Standard | - | 2.8 Ω | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| DMN63D8LDWQ-7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипEMH2407-TL-HAnlielectronics Тип | ON Semiconductor |
MOSFET 2N-CH 20V 6A EMH8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | - | - | - | - | SMD/SMT | - | 8 | - | - | - | - | - | 3 μs | - | Tape & Reel (TR) | 2012 | - | e6 | yes | Active | 1 (Unlimited) | - | EAR99 | - | Tin/Bismuth (Sn/Bi) | 150°C | -55°C | - | - | - | 1.4W | - | - | - | - | - | - | 8 | - | - | - | - | - | Dual | - | 1.4W | - | 310 ns | - | - | - | - | - | Halogen Free | - | - | 1.02μs | 20V | 2.25 μs | 6A | - | 12V | - | - | - | - | - | 580pF | - | - | - | 39mOhm | 25 mΩ | - | - | 750μm | 2mm | 1.7mm | No | - | ROHS3 Compliant | Lead Free | ||
| EMH2407-TL-H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBSO150N03Anlielectronics Тип | Infineon Technologies |
MOSFET 2N-CH 30V 7.6A 8DSO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | - | SILICON | - | 2 | 21 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | OptiMOS™ | e3 | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | - | MATTE TIN | - | - | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | - | 30V | 1.4W | GULL WING | 260 | - | 9.1A | 40 | BSO150N03 | 8 | - | - | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | 1.4W | - | - | - | 2 N-Channel (Dual) | SWITCHING | 15m Ω @ 9.1A, 10V | 2V @ 25μA | - | 1890pF @ 15V | 15nC @ 5V | 4ns | - | 4 ns | 7.6A | MS-012AA | 20V | - | - | 0.015Ohm | 30V | - | - | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | 100 pF | - | - | - | - | - | RoHS Compliant | Lead Free | ||
| BSO150N03 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMCH6602-TL-EAnlielectronics Тип | ON Semiconductor |
Trans MOSFET N-CH 30V 0.35A 6-Pin MCPH T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | LIFETIME (Last Updated: 11 hours ago) | - | - | Surface Mount | 6-SMD, Flat Leads | - | 6 | - | - | - | - | 2 | 155 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | - | e6 | yes | Obsolete | 1 (Unlimited) | - | EAR99 | - | Tin/Bismuth (Sn/Bi) | - | - | - | - | - | 800mW | - | - | - | - | - | - | 6 | - | - | - | - | - | Dual | - | 800mW | - | 19 ns | - | 2 N-Channel (Dual) | - | 3.7 Ω @ 80mA, 4V | - | - | 7pF @ 10V | 1.58nC @ 10V | 65ns | 30V | 120 ns | 350mA | - | 10V | - | - | - | 30V | - | - | - | - | Logic Level Gate | - | - | - | - | 850μm | 2mm | 1.6mm | No | - | RoHS Compliant | Lead Free | ||
| MCH6602-TL-E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAON6906AAnlielectronics Тип | Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 9.1A/10A 8DFN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | - | Surface Mount | Surface Mount | 8-PowerVDFN | - | 8 | - | - | - | 9.1A 10A | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | - | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | 2W | - | - | - | - | - | - | - | - | - | - | - | - | - | ENHANCEMENT MODE | - | - | - | 1.9W 2W | 2 N-Channel (Half Bridge) | - | 14.4m Ω @ 9.1A, 10V | 2.4V @ 250μA | - | 670pF @ 15V | 9nC @ 10V | - | 30V | - | 10A | - | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| AON6906A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAO4838Anlielectronics Тип | Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 11A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | - | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | 2W | - | - | - | - | - | - | - | - | - | - | - | - | - | ENHANCEMENT MODE | - | - | - | 2W | 2 N-Channel (Dual) | - | 9.6m Ω @ 11A, 10V | 2.6V @ 250μA | - | 1300pF @ 15V | 22nC @ 10V | - | 30V | - | 11A | - | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| AO4838 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDW2508PBAnlielectronics Тип | ON Semiconductor |
MOSFET 2P-CH 12V 6A 8-TSSOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Surface Mount | 8-TSSOP (0.173, 4.40mm Width) | - | - | 8-TSSOP | - | - | 6A | - | - | -55°C~150°C TJ | Tape & Reel (TR) | - | PowerTrench® | - | - | Obsolete | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1W | 2 P-Channel (Dual) | - | 18mOhm @ 6A, 4.5V | 1.5V @ 250μA | - | 3775pF @ 6V | 45nC @ 4.5V | - | 12V | - | - | - | - | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | - | - | - | ||
| FDW2508PB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNTMFD5C650NLT1GAnlielectronics Тип | ON Semiconductor |
T6 60V LL S08FL DS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 48 Weeks | ACTIVE (Last Updated: 5 days ago) | - | - | Surface Mount | 8-PowerTDFN | - | - | - | - | - | 21A Ta 111A Tc | - | - | -55°C~175°C TJ | Tape & Reel (TR) | - | - | e3 | yes | Active | - | - | - | - | Tin (Sn) | - | - | - | - | - | - | - | NOT SPECIFIED | - | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | 3.5W Ta 125W Tc | 2 N-Channel (Dual) | - | 4.2m Ω @ 20A, 10V | 2.2V @ 98μA | - | 2546pF @ 25V | 37nC @ 10V | - | 60V | - | - | - | - | - | - | - | - | - | - | - | - | Standard | - | - | - | - | - | - | - | - | - | RoHS Compliant | - | ||
| NTMFD5C650NLT1G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBUK9K18-40E,115Anlielectronics Тип | Nexperia USA Inc. |
MOSFET 2N-CH 40V 30A LFPAK56D
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | - | Surface Mount | SOT-1205, 8-LFPAK56 | YES | 8 | - | - | SILICON | - | 2 | 17.5 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2014 | Automotive, AEC-Q101, TrenchMOS™ | e3 | - | Active | 1 (Unlimited) | 6 | - | 19.5MOhm | - | - | - | AVALANCHE RATED | - | - | 38W | GULL WING | - | not_compliant | - | - | - | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | - | - | 2 | Dual | ENHANCEMENT MODE | - | DRAIN | 4 ns | 38W | 2 N-Channel (Dual) | SWITCHING | 16m Ω @ 10A, 10V | 2.1V @ 1mA | - | 1061pF @ 25V | 14.5nC @ 10V | 4.6ns | - | 9.9 ns | 30A | - | 15V | 40V | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| BUK9K18-40E,115 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEMH2412-TL-HAnlielectronics Тип | ON Semiconductor |
MOSFET 2N-CH 24V 6A EMH8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Surface Mount | 8-SMD, Flat Lead | - | 8 | - | - | - | - | - | 3 μs | 150°C TJ | Tape & Reel (TR) | 2008 | - | e6 | yes | Obsolete | 1 (Unlimited) | - | EAR99 | - | Tin/Bismuth (Sn/Bi) | - | - | - | - | - | 1.4W | - | - | - | - | - | - | 8 | - | - | - | - | - | Dual | - | 1.4W | - | 310 ns | - | 2 N-Channel (Dual) | - | 27m Ω @ 3A, 4.5V | - | Halogen Free | - | 6.3nC @ 4.5V | - | 24V | - | 6A | - | 12V | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | 750μm | 2mm | 1.7mm | - | - | RoHS Compliant | Lead Free | ||
| EMH2412-TL-H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAOD609Anlielectronics Тип | Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 40V 12A TO252-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | Surface Mount | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | - | - | - | - | - | - | 2 | - | -55°C~175°C TJ | Tape & Reel (TR) | 2009 | - | - | - | Not For New Designs | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | 2W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2W | N and P-Channel, Common Drain | - | 30m Ω @ 12A, 10V | 3V @ 250μA | - | 650pF @ 20V | 10.8nC @ 10V | - | 40V | - | 12A | - | - | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| AOD609 |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ