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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Transistor Element Material Current - Continuous Drain (Id) @ 25℃ Ihs Manufacturer Manufacturer Manufacturer Part Number Mfr Number of Elements Operating Temperature-Max Package Package Description Part Life Cycle Code Product Status Reflow Temperature-Max (s) Risk Rank Rohs Code Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature Subcategory Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Qualification Status Brand Name Configuration Number of Channels Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max FET Type Transistor Application Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Halogen Free Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Continuous Drain Current (ID) Threshold Voltage JEDEC-95 Code Gate to Source Voltage (Vgs) Max Dual Supply Voltage Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) Input Capacitance DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology Power Dissipation-Max (Abs) Recovery Time FET Feature Drain to Source Resistance Rds On Max Nominal Vgs Feedback Cap-Max (Crss) Height Length Width Thickness Radiation Hardening REACH SVHC RoHS Status Lead Free
Infineon Technologies IRF8513TRPBF
Mfr. Тип
IRF8513TRPBF
Anlielectronics Тип

Infineon Technologies
MOSFET 2N-CH 30V 8A/11A 8-SOIC
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 - - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - SILICON 8A 11A - - - - 2 - - - - - - - - 9.3 ns -55°C~175°C TJ Tape & Reel (TR) 2008 HEXFET® - - Obsolete 1 (Unlimited) 8 EAR99 - - - - - - 2.4W - GULL WING - - - - IRF8513PBF - - - - - - - Dual ENHANCEMENT MODE 1.5W - - 1.5W 2.4W 2 N-Channel (Dual) SWITCHING 15.5m Ω @ 8A, 10V 2.35V @ 25μA - 766pF @ 15V 8.6nC @ 4.5V - - - - 11A - - 20V - 8A 0.0155Ohm 30V 64A - - 49 mJ METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - - - 1.4986mm 4.9784mm 3.9878mm - No - RoHS Compliant Lead Free
    IRF8513TRPBF
    IRF8513TRPBF

    Infineon Technologies
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Infineon Technologies AUIRF7319Q
    Mfr. Тип
    AUIRF7319Q
    Anlielectronics Тип

    		Infineon Technologies
    MOSFET N/P-CH 30V 8SOIC
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - - - - Surface Mount 8-SOIC (0.154, 3.90mm Width) YES - - - SILICON 6.5A 4.9A - - - - 2 - - - - - - - - - -55°C~150°C TJ Tube 2007 HEXFET® e3 - Obsolete 1 (Unlimited) 8 EAR99 Matte Tin (Sn) - - AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE - - - DUAL GULL WING 260 compliant - 40 - - - R-PDSO-G8 - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - 2W N and P-Channel SWITCHING 29m Ω @ 5.8A, 10V 3V @ 250μA - 650pF @ 25V 33nC @ 10V - 30V N-CHANNEL AND P-CHANNEL - - - MS-012AA - - 6.5A 0.029Ohm - 30A - 30V 82 mJ METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - - - - - - - - - RoHS Compliant -
      AUIRF7319Q
      AUIRF7319Q

      Infineon Technologies
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      ROHM Semiconductor US6K4TR
      Mfr. Тип
      US6K4TR
      Anlielectronics Тип

      		ROHM Semiconductor
      MOSFET 2N-CH 20V 1.5A TUMT6
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 16 Weeks - - Surface Mount Surface Mount 6-SMD, Flat Leads - 6 TUMT6 - - 1.5A - - - - - - - - - - - - - 20 ns 150°C TJ Tape & Reel (TR) 2007 - - - Active 1 (Unlimited) - - - 150°C -55°C - - - 1W - - - - - - *K4 - - - - - - - Dual - 1W - 5 ns 1W 2 N-Channel (Dual) - 180mOhm @ 1.5A, 4.5V 1V @ 1mA - 110pF @ 10V 2.5nC @ 4.5V 5ns 20V - 3 ns 1.5A - - 10V - - - 20V - 110pF - - - - - Logic Level Gate 130mOhm 180 mΩ - - - - - - No - ROHS3 Compliant Lead Free
        US6K4TR
        US6K4TR

        ROHM Semiconductor
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        ON Semiconductor EFC4C012NLTDG
        Mfr. Тип
        EFC4C012NLTDG
        Anlielectronics Тип

        		ON Semiconductor
        NCH 30V 30A WLCSP6 DUAL
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 7 Weeks ACTIVE (Last Updated: 1 week ago) - - Surface Mount 6-SMD, No Lead - - - - - - - - - - - - - - - - - - - - 150°C TJ Tape & Reel (TR) 2017 - - yes Active - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2.5W Ta 2 N-Channel (Dual) Common Drain - - 2.2V @ 1mA - - 18nC @ 4.5V - - - - - - - - - - - - - - - - - - - Standard - - - - - - - - - - RoHS Compliant -
          EFC4C012NLTDG
          EFC4C012NLTDG

          ON Semiconductor
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Diodes Incorporated DMN63D8LV-7
          Mfr. Тип
          DMN63D8LV-7
          Anlielectronics Тип

          		Diodes Incorporated
          MOSFET 2N-CH 30V 0.26A SOT563
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 16 Weeks - - Surface Mount Surface Mount SOT-563, SOT-666 - 6 - - SILICON - - - - - 2 - - - - - - - - 12 ns -55°C~150°C TJ Cut Tape (CT) 2007 - e3 - Active 1 (Unlimited) 6 EAR99 Matte Tin (Sn) - - HIGH RELIABILITY - - 450mW - FLAT 260 - - 30 DMN63D8L - AEC-Q101 - - - - - Dual ENHANCEMENT MODE 450mW - 3.3 ns - 2 N-Channel (Dual) SWITCHING 2.8 Ω @ 250mA, 10V 1.5V @ 250μA - 22pF @ 25V 0.87nC @ 10V 3.2ns 30V - 6.3 ns 260mA 1.5V - 20V - - 4.5Ohm 30V - - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - - - 600μm 1.7mm 1.25mm - - No SVHC ROHS3 Compliant Lead Free
            DMN63D8LV-7
            DMN63D8LV-7

            Diodes Incorporated
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Nexperia USA Inc. BUK9K52-60E,115
            Mfr. Тип
            BUK9K52-60E,115
            Anlielectronics Тип

            		Nexperia USA Inc.
            Dual N-Channel 60 V 49 mOhm 10 nC SMT Logic Level Mosfet - LFPAK56
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 12 Weeks - Tin - Surface Mount SOT-1205, 8-LFPAK56 YES 8 - - SILICON - - - - - 2 - - - - - - - - 10.7 ns -55°C~175°C TJ Tape & Reel (TR) 2014 Automotive, AEC-Q101, TrenchMOS™ e3 - Active 1 (Unlimited) 4 EAR99 - - - AVALANCHE RATED - - 32W SINGLE GULL WING 260 not_compliant - 20 - 8 AEC-Q101; IEC-60134 R-PSSO-G4 - - - 2 Dual ENHANCEMENT MODE 32W DRAIN 6.2 ns - 2 N-Channel (Dual) SWITCHING 49m Ω @ 5A, 10V 2.1V @ 1mA - 725pF @ 25V 10nC @ 10V 10.1ns - - 9 ns 16A - - 10V 60V - 0.055Ohm - 64A - - 11.9 mJ METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - - - - - - - - - ROHS3 Compliant -
              BUK9K52-60E,115
              BUK9K52-60E,115

              Nexperia USA Inc.
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Renesas Electronics America Inc UPA1857GR-9JG-E1-A
              Mfr. Тип
              UPA1857GR-9JG-E1-A
              Anlielectronics Тип

              		Renesas Electronics America Inc
              MOSFET N-CH DUAL 60V 8-TSSOP
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 - - - - Surface Mount 8-TSSOP (0.173", 4.40mm Width) YES - 8-TSSOP - - 3.8A RENESAS ELECTRONICS CORP Renesas Electronics Corporation UPA1857GR-9JG-E1-A Renesas Electronics America Inc - 150 °C Tape & Reel (TR) , Not Recommended Last Time Buy NOT SPECIFIED 5.73 Yes - - - - - - Yes - - - - - - - - FET General Purpose Power - - - - NOT SPECIFIED compliant - - - - - - - Renesas - - - - - - - 1.7W 2 N-Channel (Dual) - 67mOhm @ 2A, 10V 2.5V @ 1mA - 580pF @ 10V 12nC @ 10V - 60V N-CHANNEL - - - - - - 3.8 A - - - - - - METAL-OXIDE SEMICONDUCTOR 1.7 W - Logic Level Gate - - - - - - - - - - - -
                UPA1857GR-9JG-E1-A
                UPA1857GR-9JG-E1-A

                Renesas Electronics America Inc
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Diodes Incorporated BSS8402DWQ-7
                Mfr. Тип
                BSS8402DWQ-7
                Anlielectronics Тип

                		Diodes Incorporated
                MOSFET N/P-CH 60V/50V
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 14 Weeks - - Surface Mount Surface Mount 6-TSSOP, SC-88, SOT-363 - - - - SILICON 115mA 130mA - - - - 2 - - - - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2006 - e3 yes Active 1 (Unlimited) 6 EAR99 Matte Tin (Sn) - - HIGH RELIABILITY - - 200mW DUAL GULL WING 260 - - 40 - - AEC-Q101 R-PDSO-G6 - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - - N and P-Channel SWITCHING 13.5 Ω @ 500mA, 10V 2.5V @ 250μA - 50pF @ 25V - - 60V 50V N-CHANNEL AND P-CHANNEL - 130mA - - - - 0.115A 7.5Ohm - - - 60V - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - - 5 pF - - - - - - ROHS3 Compliant -
                  BSS8402DWQ-7
                  BSS8402DWQ-7

                  Diodes Incorporated
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  ON Semiconductor FDS8934A
                  Mfr. Тип
                  FDS8934A
                  Anlielectronics Тип

                  		ON Semiconductor
                  MOSFET 2P-CH 20V 4A 8SOIC
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 - - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 230.4mg - 4A - - - - 2 - - - - - - - - 260 ns -55°C~150°C TJ Tape & Reel (TR) 1998 - - - Obsolete 1 (Unlimited) - - - - - - - -20V 900mW - - - - -4A - - - - - - - - - Dual - 2W - 8 ns - 2 P-Channel (Dual) - 55m Ω @ 4A, 4.5V 1V @ 250μA - 1130pF @ 10V 28nC @ 5V 23ns 20V - 90 ns -4A - - -8V - - - -20V - - - - - - - Logic Level Gate - - - - 1.5mm 5mm 4mm - - - RoHS Compliant Lead Free
                    FDS8934A
                    FDS8934A

                    ON Semiconductor
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    ON Semiconductor NTMFD5C680NLT1G
                    Mfr. Тип
                    NTMFD5C680NLT1G
                    Anlielectronics Тип

                    		ON Semiconductor
                    T6 60V LL SO8FL DUAL
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 48 Weeks ACTIVE (Last Updated: 5 days ago) - - Surface Mount 8-PowerTDFN - - - - - 7.5A Ta 26A Tc - - - - - - - - - - - - - - -55°C~175°C TJ Tape & Reel (TR) - - e3 yes Active 1 (Unlimited) - - Tin (Sn) - - - - - - - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - - - - - - - - 3W Ta 19W Tc 2 N-Channel (Dual) - 28m Ω @ 5A, 10V 2.2V @ 13μA - 350pF @ 25V 5nC @ 10V - 60V - - - - - - - - - - - - - - - - - Standard - - - - - - - - - - RoHS Compliant -
                      NTMFD5C680NLT1G
                      NTMFD5C680NLT1G

                      ON Semiconductor
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Texas Instruments CSD85302L
                      Mfr. Тип
                      CSD85302L
                      Anlielectronics Тип

                      		Texas Instruments
                      MOSFET 2N-CH 20V 5A
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 6 Weeks ACTIVE (Last Updated: 5 days ago) - Surface Mount Surface Mount 4-XFLGA - 4 - - SILICON - - - - - 2 - - - - - - - - 173 ns -55°C~150°C TJ Tape & Reel (TR) - NexFET™ - yes Active 1 (Unlimited) 4 EAR99 - - - - - - 1.7W BOTTOM NO LEAD - - - - CSD85302 - - - - - COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - SOURCE 37 ns - 2 N-Channel (Dual) Common Drain SWITCHING - - - - 7.8nC @ 4.5V 54ns - - 99 ns 7A - - 10V - - - - - - - - METAL-OXIDE SEMICONDUCTOR - - Standard - - - 79 pF - 1.35mm 1.35mm 200μm - - ROHS3 Compliant Lead Free
                        CSD85302L
                        CSD85302L

                        Texas Instruments
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Texas Instruments CSD85301Q2T
                        Mfr. Тип
                        CSD85301Q2T
                        Anlielectronics Тип

                        		Texas Instruments
                        MOSFET 2N-CH 20V 5A 6WSON
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 12 Weeks ACTIVE (Last Updated: 2 days ago) Tin Surface Mount Surface Mount 6-WDFN Exposed Pad - 6 - 9.695537mg SILICON - - - - - 2 - - - - - - - - 14 ns -55°C~150°C TJ Tape & Reel (TR) - NexFET™ e3 yes Active 1 (Unlimited) 6 - - - - AVALANCHE RATED - - 2.3W - NO LEAD - - - - CSD85301 - - - - - - 2 Dual ENHANCEMENT MODE - DRAIN 6 ns - 2 N-Channel (Dual) SWITCHING 27m Ω @ 5A, 4.5V 1.2V @ 250μA - 469pF @ 10V 5.4nC @ 4.5V 26ns 20V - 15 ns 5A 900mV - 10V - 5A 0.039Ohm 20V - - - 3.8 mJ METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate, 5V Drive - - - - - 2mm 2mm 750μm - No SVHC ROHS3 Compliant Lead Free
                          CSD85301Q2T
                          CSD85301Q2T

                          Texas Instruments
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          ON Semiconductor FDS8949-F085
                          Mfr. Тип
                          FDS8949-F085
                          Anlielectronics Тип

                          		ON Semiconductor
                          MOSFET 2N-CH 40V 6A 8-SOIC
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 7 Weeks ACTIVE (Last Updated: 4 days ago) - - Surface Mount 8-SOIC (0.154, 3.90mm Width) YES - - - SILICON 6A - - - - 2 - - - - - - - - - -55°C~150°C TJ Tape & Reel (TR) - Automotive, AEC-Q101, PowerTrench® - yes Active 1 (Unlimited) 8 - - - - - - - - - GULL WING NOT SPECIFIED - - NOT SPECIFIED - - - R-PDSO-G8 Not Qualified - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - 2W 2 N-Channel (Dual) SWITCHING 29m Ω @ 6A, 10V 3V @ 250μA - 955pF @ 20V 11nC @ 5V - 40V - - - - - - - 6A 0.029Ohm - 20A - 40V 26 mJ METAL-OXIDE SEMICONDUCTOR 2W - Logic Level Gate - - - - - - - - - - ROHS3 Compliant -
                            FDS8949-F085
                            FDS8949-F085

                            ON Semiconductor
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            onsemi NTD4906NAT4H
                            Mfr. Тип
                            NTD4906NAT4H
                            Anlielectronics Тип

                            		onsemi
                            NTD4906N - 30V, 54A, N-CHANNEL
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - - - - - - - - - - - - - - - onsemi - - Bulk - - Active - - - - - - - * - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                              NTD4906NAT4H
                              NTD4906NAT4H

                              onsemi
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Infineon Technologies BSL205NH6327XTSA1
                              Mfr. Тип
                              BSL205NH6327XTSA1
                              Anlielectronics Тип

                              		Infineon Technologies
                              Trans MOSFET N-CH 20(Min)V 2.5A 6-Pin TSOP T/R
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 12 Weeks - - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - - - - SILICON - - - - - 2 - - - - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ e3 yes Obsolete 1 (Unlimited) 6 EAR99 Tin (Sn) - - AVALANCHE RATED - - 500mW - GULL WING NOT SPECIFIED - - NOT SPECIFIED - - - R-PDSO-G6 - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - 500mW 2 N-Channel (Dual) - 50m Ω @ 2.5A, 4.5V 1.2V @ 11μA Halogen Free 419pF @ 10V 3.2nC @ 4.5V 2.9ns - - - 2.5A - - 20V 20V - 0.05Ohm - - - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate, 4.5V Drive - - - 24 pF - - - - - - ROHS3 Compliant Lead Free
                                BSL205NH6327XTSA1
                                BSL205NH6327XTSA1

                                Infineon Technologies
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Nexperia USA Inc. PHKD3NQ10T,518
                                Mfr. Тип
                                PHKD3NQ10T,518
                                Anlielectronics Тип

                                		Nexperia USA Inc.
                                MOSFET 2N-CH 100V 3A 8SOIC
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 16 Weeks - - - Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 540.001716mg - - - - - - - - - - - - - - - 20 ns -65°C~150°C TJ Tape & Reel (TR) 2010 TrenchMOS™ - - Obsolete 2 (1 Year) - - - - - - - - 2W - - - - - - - 8 - - - - - 2 Dual - - - 6 ns 2W 2 N-Channel (Dual) - 90m Ω @ 1.5A, 10V 4V @ 1mA - 633pF @ 20V 21nC @ 10V 12ns - - 10 ns 3A - - 20V 100V - - - - - - - - - - Logic Level Gate - - - - - - - - - - RoHS Compliant -
                                  PHKD3NQ10T,518
                                  PHKD3NQ10T,518

                                  Nexperia USA Inc.
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  ROHM Semiconductor TT8M2TR
                                  Mfr. Тип
                                  TT8M2TR
                                  Anlielectronics Тип

                                  		ROHM Semiconductor
                                  MOSFET N/P-CH 30V/20V 2.5A TSST8
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 10 Weeks - - Surface Mount Surface Mount 8-SMD, Flat Lead - 8 - - SILICON - - - - - 2 - - - - - - - - 120 ns 150°C TJ Tape & Reel (TR) 2009 - - yes Not For New Designs 1 (Unlimited) 8 EAR99 - - - - - - 1.25W DUAL - 260 - - 10 *M2 8 - - - - - 2 - ENHANCEMENT MODE - - 9 ns - N and P-Channel SWITCHING 90m Ω @ 2.5A, 4.5V 1.5V @ 1mA - 180pF @ 10V 3.2nC @ 4.5V 30ns 30V 20V N-CHANNEL AND P-CHANNEL 85 ns 2.5A - - 10V - - 0.09Ohm -20V - - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - - - - - - - No - ROHS3 Compliant Lead Free
                                    TT8M2TR
                                    TT8M2TR

                                    ROHM Semiconductor
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Infineon Technologies IRLHS6276TR2PBF
                                    Mfr. Тип
                                    IRLHS6276TR2PBF
                                    Anlielectronics Тип

                                    		Infineon Technologies
                                    MOSFET 2N-CH 20V 4.5A PQFN
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 - - - Surface Mount Surface Mount 6-PowerVDFN - 6 6-PQFN Dual (2x2) - - 4.5A - - - - 2 - - - - - - - - 10 ns - Cut Tape (CT) 2013 HEXFET® - - Obsolete 1 (Unlimited) - - - 150°C -55°C - - - 1.5W - - - - - - IRLHS6276PBF - - - - - - - Dual - 1.5W - 4.4 ns 1.5W 2 N-Channel (Dual) - 45mOhm @ 3.4A, 4.5V 1.1V @ 10μA - 310pF @ 10V 3.1nC @ 4.5V 9.3ns 20V - 4.9 ns 4.5A 800mV - 12V - - - 20V - 310pF - - - - 7.8 ns Logic Level Gate 45mOhm 45 mΩ 800 mV - 950μm 2.1mm 2.1mm - No No SVHC RoHS Compliant -
                                      IRLHS6276TR2PBF
                                      IRLHS6276TR2PBF

                                      Infineon Technologies
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      ROHM Semicon RYM002N05GT2CL
                                      Mfr. Тип
                                      RYM002N05GT2CL
                                      Anlielectronics Тип

                                      		ROHM Semicon
                                      VMT3 MOSFETs ROHS
                                      Сборник данных Сравнение
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                                        RYM002N05GT2CL
                                        RYM002N05GT2CL

                                        ROHM Semicon
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                                        ON Semiconductor EFC6604R-TR
                                        Mfr. Тип
                                        EFC6604R-TR
                                        Anlielectronics Тип

                                        		ON Semiconductor
                                        Dual N-Channel Power MOSFET, 12V, 13A, 9.0mO
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                                          		 30 Weeks ACTIVE (Last Updated: 6 days ago) - Surface Mount Surface Mount 6-XFBGA - 6 - - SILICON - - - - - 2 - - - - - - - - - 150°C TJ Tape & Reel (TR) 2016 - - yes Active 1 (Unlimited) 6 EAR99 - - - - - - 1.6W BOTTOM BALL - - - - - - - - - - - 2 Dual DEPLETION MODE - - - - 2 N-Channel (Dual) SWITCHING - - Halogen Free - 29nC @ 4.5V - 12V - - 13A - - - - - - - - - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate, 2.5V Drive 9mOhm - - - - - - - - - ROHS3 Compliant Lead Free
                                          EFC6604R-TR
                                          EFC6604R-TR

                                          ON Semiconductor
                                          RoHS :
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                                          Discrete Semiconductor Products

                                          Transistors - FETs, MOSFETs - Arrays definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - Arrays Product Listing: IRF8513TRPBF,AUIRF7319Q,US6K4TR,EFC4C012NLTDG,DMN63D8LV-7.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - FETs, MOSFETs - Arrays has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.