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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Weight | Transistor Element Material | Current - Continuous Drain (Id) @ 25℃ | Number of Elements | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Voltage - Rated DC | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current Rating | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Number of Channels | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | Power - Max | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Halogen Free | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Fall Time (Typ) | Continuous Drain Current (ID) | Threshold Voltage | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | Dual Supply Voltage | Input Capacitance | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | FET Feature | Drain to Source Resistance | Rds On Max | Nominal Vgs | Feedback Cap-Max (Crss) | Height | Length | Width | Thickness | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
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  | Mfr. ТипSTL8DN6LF3Anlielectronics Тип | STMicroelectronics |
MOSFET 2N-CH 60V 20A 5X6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | ACTIVE (Last Updated: 8 months ago) | - | Surface Mount | Surface Mount | 8-PowerVDFN | - | 8 | - | - | - | - | 2 | 32.5 ns | -55°C~175°C TJ | Tape & Reel (TR) | - | Automotive, AEC-Q101, STripFET™ III | - | - | Active | 1 (Unlimited) | - | - | EAR99 | - | - | - | - | - | 65W | - | - | - | - | - | - | STL8 | - | - | - | - | - | - | - | - | 65W | - | 9 ns | - | 2 N-Channel (Dual) | - | 30m Ω @ 4A, 10V | 3V @ 250μA | - | 668pF @ 25V | 13nC @ 10V | 7.7ns | 60V | - | 5 ns | 20A | - | 20V | - | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| STL8DN6LF3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAON4803Anlielectronics Тип | Alpha & Omega Semiconductor Inc. |
MOSFET 2P-CH 20V 3.4A DFN3X2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | - | Surface Mount | Surface Mount | 8-SMD, Flat Lead | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | - | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | - | 1.7W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.7W | 2 P-Channel (Dual) | - | 90m Ω @ 3.4A, 4.5V | 1V @ 250μA | - | 745pF @ 10V | 8nC @ 4.5V | - | 20V | - | - | 3.4A | - | - | - | - | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| AON4803 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDMC9430L-F085Anlielectronics Тип | ON Semiconductor |
MOSFET 2 N-CHANNEL 40V 12A 8MLP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 25 Weeks | ACTIVE (Last Updated: 2 days ago) | - | Surface Mount | Surface Mount | 8-PowerWDFN | - | - | - | 196mg | - | 12A | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | - | - | yes | Active | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Dual | - | - | - | - | 11.4W | 2 N-Channel (Dual) | - | 8m Ω @ 12A, 10V | 3V @ 250μA | - | 984pF @ 20V | 22nC @ 10V | - | 40V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Standard | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| FDMC9430L-F085 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипUM6K33NTNAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2N-CH 50V 0.2A UMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | Surface Mount | Surface Mount | 6-TSSOP, SC-88, SOT-363 | - | 6 | - | - | SILICON | - | 2 | 15 ns | 150°C TJ | Cut Tape (CT) | 2010 | - | - | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | - | - | - | - | 120mW | - | GULL WING | 260 | - | - | 10 | - | 6 | - | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | 4 ns | - | 2 N-Channel (Dual) | SWITCHING | 2.2 Ω @ 200mA, 4.5V | 1V @ 1mA | - | 25pF @ 10V | - | 6ns | 50V | - | 55 ns | 200mA | - | 8V | - | 0.2A | 2.4Ohm | - | - | - | - | 50V | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 1.2V Drive | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| UM6K33NTN | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипZXMC3F31DN8TAAnlielectronics Тип | Diodes Incorporated |
Trans MOSFET N/P-CH 30V 7.3A/5.3A 8-Pin SO T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 17 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | - | SILICON | 6.8A 4.9A | 2 | 30 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | - | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | Matte Tin (Sn) | - | - | - | - | 1.8W | DUAL | GULL WING | 260 | - | - | 40 | - | 8 | - | - | - | - | - | - | ENHANCEMENT MODE | 2.1W | - | 1.9 ns | - | N and P-Channel | SWITCHING | 24m Ω @ 7A, 10V | 3V @ 250μA | - | 608pF @ 15V | 12.9nC @ 10V | 3ns | 30V | N-CHANNEL AND P-CHANNEL | 21 ns | 4.9A | - | 20V | - | 5.7A | - | -30V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 4.5V Drive | - | - | - | - | - | - | - | - | No | No SVHC | ROHS3 Compliant | - | ||
| ZXMC3F31DN8TA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDMA1025PAnlielectronics Тип | ON Semiconductor |
MOSFET 2P-CH 20V 3.1A MLP2X2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | ACTIVE (Last Updated: 3 days ago) | - | Surface Mount | Surface Mount | 6-VDFN Exposed Pad | - | 6 | - | 40mg | SILICON | 3.1A | 2 | 13 ns | -55°C~150°C TJ | Tape & Reel (TR) | - | PowerTrench® | e4 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | - | -20V | 700mW | - | NO LEAD | NOT SPECIFIED | - | -3.1A | NOT SPECIFIED | - | - | - | - | Not Qualified | - | - | Dual | ENHANCEMENT MODE | 1.4W | - | 5 ns | - | 2 P-Channel (Dual) | - | 155m Ω @ 3.1A, 4.5V | 1.5V @ 250μA | - | 450pF @ 10V | 4.8nC @ 4.5V | 14ns | 20V | - | 14 ns | -3.1A | -900mV | 12V | - | - | - | -20V | 6A | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | 750μm | 2mm | 2mm | - | - | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDMA1025P | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIPG20N06S4L11AATMA1Anlielectronics Тип | Infineon Technologies |
MOSFET 2N-CH 8TDSON
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount, Wettable Flank | 8-PowerVDFN | - | 8 | - | - | SILICON | - | 2 | - | -55°C~175°C TJ | Tape & Reel (TR) | 2012 | Automotive, AEC-Q101, OptiMOS™ | - | yes | Active | 1 (Unlimited) | 8 | - | - | - | - | - | LOGIC LEVEL COMPATIBLE | - | 65W | - | FLAT | NOT SPECIFIED | not_compliant | - | NOT SPECIFIED | - | - | - | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | - | 2 N-Channel (Dual) | - | 11.2m Ω @ 17A, 10V | 2.2V @ 28μA | Halogen Free | 4020pF @ 25V | 53nC @ 10V | - | 60V | - | - | 20A | - | - | 60V | - | 0.0112Ohm | - | - | - | - | - | 165 mJ | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Contains Lead | ||
| IPG20N06S4L11AATMA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAO4854Anlielectronics Тип | Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 8A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | - | - | - | 2 | - | -55°C~150°C TJ | Bulk | 2010 | - | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | - | 2W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2W | - | - | - | 2 N-Channel (Dual) | - | 19m Ω @ 8A, 10V | 2.4V @ 250μA | - | 888pF @ 15V | 18nC @ 10V | - | 30V | - | - | 8A | - | - | - | - | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | - | ||
| AO4854 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDMS3668SAnlielectronics Тип | ON Semiconductor |
MOSFET PowerStage Dual N-Ch PowerTrench MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | ACTIVE (Last Updated: 3 days ago) | - | Surface Mount | Surface Mount | 8-PowerTDFN | - | 8 | - | 171mg | SILICON | 13A 18A | 2 | 19 ns | -55°C~150°C TJ | Tape & Reel (TR) | - | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | Tin (Sn) | - | - | - | - | 1W | - | FLAT | - | - | - | - | - | - | - | R-PDSO-F6 | - | - | - | Dual | ENHANCEMENT MODE | 2.5W | DRAIN SOURCE | 7.7 ns | - | 2 N-Channel (Dual) Asymmetrical | SWITCHING | 8m Ω @ 13A, 10V | 2.7V @ 250μA | - | 1765pF @ 15V | 29nC @ 10V | - | - | - | - | 18A | - | 12V | - | 13A | - | 30V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | 70 pF | 1.1mm | 5mm | 5.9mm | - | No | - | ROHS3 Compliant | Lead Free | ||
| FDMS3668S | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBUK7K15-80EXAnlielectronics Тип | Nexperia USA Inc. |
MOSFET 2 N-CH 80V 23A LFPAK56D
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | - | Surface Mount | SOT-1205, 8-LFPAK56 | - | - | - | - | - | 23A Ta | - | - | -55°C~175°C TJ | Tape & Reel (TR) | - | Automotive, AEC-Q101 | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 8 | - | - | - | - | - | - | - | - | - | - | 68W | 2 N-Channel (Dual) | - | 15m Ω @ 10A, 10V | 4V @ 1mA | - | 2457pF @ 25V | 35.1nC @ 10V | - | 80V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Standard | - | - | - | - | - | - | - | - | - | - | Non-RoHS Compliant | - | ||
| BUK7K15-80EX | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDMC7208SAnlielectronics Тип | ON Semiconductor |
MOSFET 30V Dual N-Channel PowerTrench MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 23 Weeks | ACTIVE (Last Updated: 5 days ago) | - | Surface Mount | Surface Mount | 8-PowerWDFN | - | 8 | - | 196mg | SILICON | 12A 16A | 2 | 23 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | PowerTrench® | e4 | yes | Active | 1 (Unlimited) | 4 | - | EAR99 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | - | - | - | - | 800mW | - | - | - | - | - | - | - | - | - | S-PDSO-N4 | - | - | - | Dual | ENHANCEMENT MODE | 1.9W | DRAIN | 7 ns | - | 2 N-Channel (Dual) | SWITCHING | 9m Ω @ 12A, 10V | 3V @ 250μA | - | 1130pF @ 15V | 18nC @ 10V | - | - | - | 2 ns | 16A | - | 20V | - | 12A | 0.009Ohm | 30V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | 55 pF | 750μm | 3mm | 3mm | - | No | - | ROHS3 Compliant | - | ||
| FDMC7208S | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипCSD87501LAnlielectronics Тип | Texas Instruments |
MOSFET CSD87501L 30-VDual N Channel Power MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | ACTIVE (Last Updated: 4 days ago) | - | Surface Mount | Surface Mount | 10-XFLGA | - | 10 | - | - | SILICON | - | 2 | 709 ns | -55°C~150°C TJ | Tape & Reel (TR) | - | NexFET™ | - | yes | Active | 1 (Unlimited) | 10 | - | EAR99 | - | - | - | - | - | 2.5W | BOTTOM | NO LEAD | 260 | - | - | NOT SPECIFIED | CSD87501 | - | - | - | - | - | 2 | - | ENHANCEMENT MODE | - | - | 164 ns | - | 2 N-Channel (Dual) Common Drain | SWITCHING | - | 2.3V @ 250μA | - | - | 40nC @ 10V | 260ns | 30V | - | 712 ns | 14A | - | 20V | - | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | 6.6mOhm | - | - | 198 pF | 200μm | 3.37mm | 1.47mm | 200μm | - | - | ROHS3 Compliant | Lead Free | ||
| CSD87501L | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMT3020LFDB-7Anlielectronics Тип | Diodes Incorporated |
MOSFET 2N-CHA 30V 7.7A DFN2020
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 23 Weeks | - | - | Surface Mount | Surface Mount | 6-UDFN Exposed Pad | - | - | - | - | SILICON | - | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101 | e4 | - | Active | 1 (Unlimited) | 6 | - | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | - | - | 700mW | - | NO LEAD | NOT SPECIFIED | - | - | NOT SPECIFIED | - | - | - | S-PDSO-N6 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | 700mW | 2 N-Channel (Dual) | SWITCHING | 20m Ω @ 9A, 10V | 3V @ 250μA | - | 393pF @ 15V | 7nC @ 10V | - | 30V | - | - | 7.7A | - | - | - | - | 0.02Ohm | - | - | - | - | 30V | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| DMT3020LFDB-7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDMG6898LSDQ-13Anlielectronics Тип | Diodes Incorporated |
MOSFET 2N-CH 20V 9.5A 8SO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | - | SILICON | - | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | - | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | Matte Tin (Sn) | - | - | HIGH RELIABILITY | - | 1.28W | - | GULL WING | 260 | - | - | 40 | - | - | AEC-Q101 | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | 1.28W | 2 N-Channel (Dual) | SWITCHING | 16m Ω @ 9.4A, 4.5V | 1.5V @ 250μA | - | 1149pF @ 10V | 26nC @ 10V | - | 20V | - | - | 9.5A | - | - | - | - | 0.016Ohm | - | 30A | - | - | 20V | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| DMG6898LSDQ-13 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF7756TRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET 2P-CH 12V 4.3A 8TSSOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | Surface Mount | 8-TSSOP (0.173, 4.40mm Width) | - | 8 | 8-TSSOP | - | - | 4.3A | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | HEXFET® | - | - | Obsolete | 1 (Unlimited) | - | SMD/SMT | - | - | 150°C | -55°C | - | - | 1W | - | - | - | - | - | - | IRF7756PBF | - | - | - | - | - | - | Dual | - | 1W | - | - | 1W | 2 P-Channel (Dual) | - | 40mOhm @ 4.3A, 4.5V | 900mV @ 250μA | - | 1400pF @ 10V | 18nC @ 4.5V | - | 12V | - | - | -4.3A | - | 8V | - | - | - | -12V | - | -12V | 1.4nF | - | - | - | Logic Level Gate | 40mOhm | 40 mΩ | -900 mV | - | - | - | - | - | - | No SVHC | RoHS Compliant | Lead Free | ||
| IRF7756TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBUK9K45-100E,115Anlielectronics Тип | Nexperia USA Inc. |
MOSFET 2N-CH 100V 21A LFPAK56D
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | - | Surface Mount | SOT-1205, 8-LFPAK56 | YES | 8 | - | - | SILICON | - | 2 | 41.34 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, TrenchMOS™ | e3 | - | Active | 1 (Unlimited) | 6 | - | - | - | - | - | AVALANCHE RATED | - | 53W | - | GULL WING | - | not_compliant | - | - | - | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | - | - | 2 | Dual | ENHANCEMENT MODE | 53W | DRAIN | 4 ns | - | 2 N-Channel (Dual) | SWITCHING | 42m Ω @ 5A, 10V | 2.1V @ 1mA | - | 2152pF @ 25V | 33.5nC @ 10V | 8.47ns | - | - | 27.75 ns | 21A | - | 10V | 100V | - | 0.045Ohm | 100V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| BUK9K45-100E,115 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNVMFD5852NLWFT1GAnlielectronics Тип | ON Semiconductor |
Trans MOSFET N-CH 40V 44A 8-Pin DFN T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | ACTIVE, NOT REC (Last Updated: 4 days ago) | - | - | Surface Mount | 8-PowerTDFN | YES | 8 | - | - | SILICON | 15A | 2 | 27 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2014 | - | e3 | yes | Not For New Designs | 1 (Unlimited) | 6 | - | EAR99 | Tin (Sn) | - | - | - | - | 3.2W | - | FLAT | - | - | - | - | - | 8 | AEC-Q101 | R-PDSO-F6 | - | - | 2 | Dual | ENHANCEMENT MODE | - | DRAIN | 12 ns | - | 2 N-Channel (Dual) | - | 6.9m Ω @ 20A, 10V | 2.4V @ 250μA | Halogen Free | 1800pF @ 25V | 36nC @ 10V | 8ns | 40V | - | 5 ns | 44A | - | 20V | - | 15A | - | - | - | - | - | 40V | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| NVMFD5852NLWFT1G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAO4611Anlielectronics Тип | Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 60V 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | - | - | - | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | - | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | - | 2W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2W | - | - | - | N and P-Channel | - | 25m Ω @ 6.3A, 10V | 3V @ 250μA | - | 2300pF @ 30V | 58nC @ 10V | - | 60V | - | - | - | - | 20V | - | - | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | - | ||
| AO4611 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDMC3032LSD-13Anlielectronics Тип | Diodes Incorporated |
MOSFET N/P-CH 30V 8.1A/7A 8SOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 15 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 73.992255mg | SILICON | 8.1A 7A | 2 | 50.1 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | - | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | Matte Tin (Sn) | - | - | HIGH RELIABILITY | - | 2.5W | DUAL | GULL WING | 260 | - | - | 40 | - | 8 | - | - | - | - | 2 | - | ENHANCEMENT MODE | - | - | 10.1 ns | - | N and P-Channel | SWITCHING | 32m Ω @ 7A, 10V | 2.1V @ 250μA | - | 404.5pF @ 15V | 9.2nC @ 10V | 6.5ns | 30V | N-CHANNEL AND P-CHANNEL | 22.2 ns | 7A | - | 20V | - | - | - | -30V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | - | - | - | No | No SVHC | ROHS3 Compliant | - | ||
| DMC3032LSD-13 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDMC1229UFDB-13Anlielectronics Тип | Diodes Incorporated |
MOSFET N/P-CH 12V U-DFN2020-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 15 Weeks | - | - | Surface Mount | Surface Mount | 6-UDFN Exposed Pad | - | 6 | - | - | SILICON | 5.6A 3.8A | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | - | e4 | - | Active | 1 (Unlimited) | 6 | - | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | HIGH RELIABILITY | - | 1.4W | DUAL | - | 260 | - | - | 30 | - | - | AEC-Q101 | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | - | N and P-Channel | SWITCHING | 29m Ω @ 5A, 4.5V | 1V @ 250μA | - | 914pF @ 6V | 19.6nC @ 8V | - | 12V | N-CHANNEL AND P-CHANNEL | - | 3.8A | - | - | - | - | 0.029Ohm | - | - | - | - | 12V | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | - | ||
| DMC1229UFDB-13 |
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