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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Transistor Element Material Current - Continuous Drain (Id) @ 25℃ Number of Elements Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Resistance Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature HTS Code Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Qualification Status Configuration Number of Channels Element Configuration Operating Mode Power Dissipation Output Current Case Connection Turn On Delay Time Power - Max FET Type Transistor Application Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Continuous Drain Current (ID) Threshold Voltage JEDEC-95 Code Gate to Source Voltage (Vgs) Max Dual Supply Voltage Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) Dual Supply Voltage Input Capacitance DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology FET Feature Drain to Source Resistance Rds On Max Nominal Vgs Feedback Cap-Max (Crss) Height Length Width Thickness Radiation Hardening REACH SVHC RoHS Status Lead Free
ON Semiconductor EFC4618R-TR
Mfr. Тип
EFC4618R-TR
Anlielectronics Тип

ON Semiconductor
MOSFET SWITCHING DEVICE
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 - - - Surface Mount 4-XBGA, 4-FCBGA YES 4 - - - - - 1.84 μs 150°C TJ Tape & Reel (TR) 2007 - - - Obsolete 1 (Unlimited) - - EAR99 - - - - - - - 1.6W - - - - - - - - - - - - - Dual DEPLETION MODE 1.6W - - 200 ns - 2 N-Channel (Dual) - - - - - 815ns - - 1.77 μs 6A - - 12V - - - 24V - - - - - METAL-OXIDE SEMICONDUCTOR Standard 23mOhm - - - - - - - No - RoHS Compliant -
    EFC4618R-TR
    EFC4618R-TR

    ON Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Infineon Technologies IRF8910GTRPBF
    Mfr. Тип
    IRF8910GTRPBF
    Anlielectronics Тип

    		Infineon Technologies
    MOSFET 2N-CH 20V 10A 8-SOIC
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - SILICON - 1 9.7 ns -55°C~150°C TJ Tape & Reel (TR) 2005 HEXFET® - - Obsolete 1 (Unlimited) 8 - EAR99 - - - - - - - 2W - GULL WING - - - - IRF8910GPBF - - - - - - Single ENHANCEMENT MODE 2W - - 6.2 ns - 2 N-Channel (Dual) SWITCHING 13.4m Ω @ 10A, 10V 2.55V @ 250μA 960pF @ 10V 11nC @ 4.5V 10ns - - 4.1 ns 10A - MS-012AA 20V - - 0.0134Ohm 20V - - - - 19 mJ METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - 1.4986mm 4.9784mm 3.9878mm - No - RoHS Compliant -
      IRF8910GTRPBF
      IRF8910GTRPBF

      Infineon Technologies
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Infineon Technologies IRFHE4250DTRPBF
      Mfr. Тип
      IRFHE4250DTRPBF
      Anlielectronics Тип

      		Infineon Technologies
      MOSFET 2N-CH 25V 86A/303A PQFN
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 18 Weeks - Surface Mount Surface Mount 32-PowerWFQFN - 30 - - - 86A 303A 2 24 ns -55°C~150°C TJ Tape & Reel (TR) 2004 FASTIRFET™ - - Obsolete 2 (1 Year) - - EAR99 - - - - - - - 156W - - - - - - IRFHE4250 - - - - - - Dual - 156W - - 17 ns - 2 N-Channel (Dual) - 2.75m Ω @ 27A, 10V 2.1V @ 35μA 1735pF @ 13V 20nC @ 4.5V 54ns 25V - 16 ns 303A 1.6V - 16V - - - - - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - 900μm 6mm 5mm - - No SVHC RoHS Compliant Lead Free
        IRFHE4250DTRPBF
        IRFHE4250DTRPBF

        Infineon Technologies
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        ROHM Semiconductor TT8J2TR
        Mfr. Тип
        TT8J2TR
        Anlielectronics Тип

        		ROHM Semiconductor
        MOSFET 2P-CH 30V 2.5A TSST8
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 10 Weeks - Surface Mount Surface Mount 8-SMD, Flat Lead - 8 - - SILICON - 2 35 ns 150°C TJ Tape & Reel (TR) 2009 - e2 yes Not For New Designs 1 (Unlimited) 8 - EAR99 - TIN COPPER - - - - - 1.25W - - 260 - - 10 *J2 8 - - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE 1.25W - - 7 ns - 2 P-Channel (Dual) SWITCHING 84m Ω @ 2.5A, 10V 2.5V @ 1mA 460pF @ 10V 4.8nC @ 5V 20ns 30V - 14 ns 2.5A - - 20V - - - -30V 10A - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - - No - ROHS3 Compliant Lead Free
          TT8J2TR
          TT8J2TR

          ROHM Semiconductor
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Nexperia USA Inc. NX3020NAKV,115
          Mfr. Тип
          NX3020NAKV,115
          Anlielectronics Тип

          		Nexperia USA Inc.
          NEXPERIA - NX3020NAKV,115 - Dual MOSFET, Dual N Channel, 200 mA, 30 V, 2.7 ohm, 10 V, 1.2 V
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 4 Weeks - - Surface Mount SOT-563, SOT-666 YES 6 - - SILICON - 2 34 ns -55°C~150°C TJ Tape & Reel (TR) 2013 - e3 - Active 1 (Unlimited) 6 - - - Tin (Sn) - - - - - 375mW - GULL WING - - - - - 6 - - - - 2 Dual ENHANCEMENT MODE - - - 5 ns 375mW 2 N-Channel (Dual) SWITCHING 4.5 Ω @ 100mA, 10V 1.5V @ 250μA 13pF @ 10V 0.44nC @ 4.5V 5ns - - 17 ns 200mA - - 1.2V 30V - - 30V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - - No - ROHS3 Compliant -
            NX3020NAKV,115
            NX3020NAKV,115

            Nexperia USA Inc.
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Diodes Incorporated ZXMP3A17DN8TA
            Mfr. Тип
            ZXMP3A17DN8TA
            Anlielectronics Тип

            		Diodes Incorporated
            MOSFET 2P-CH 30V 3.4A 8-SOIC
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 12 Weeks - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON 4.4A Ta 2 29.2 ns -55°C~150°C TJ Tape & Reel (TR) 2006 - e3 yes Active 1 (Unlimited) 8 - EAR99 70mOhm Matte Tin (Sn) - - - - -30V 2.1W - GULL WING 260 - -4.4A 40 - 8 - - - - - - ENHANCEMENT MODE 2.1W - - 1.74 ns - 2 P-Channel (Dual) SWITCHING 70m Ω @ 3.2A, 10V 1V @ 250μA 630pF @ 15V 8.28nC @ 5V 2.87ns 30V - 8.72 ns 4.4A - - 20V - 3.4A - - - - - - - METAL-OXIDE SEMICONDUCTOR Standard - - - - 1.5mm 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
              ZXMP3A17DN8TA
              ZXMP3A17DN8TA

              Diodes Incorporated
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              ROHM Semiconductor UM5K1NTR
              Mfr. Тип
              UM5K1NTR
              Anlielectronics Тип

              		ROHM Semiconductor
              MOSFET 2N-CH 30V .1A SOT-353
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 - - Surface Mount Surface Mount 5-TSSOP, SC-70-5, SOT-353 - 5 - - SILICON - 2 80 ns 150°C TJ Tape & Reel (TR) 2001 - e2 yes Obsolete 1 (Unlimited) 5 SMD/SMT EAR99 13Ohm TIN COPPER - - - - 30V 150mW - GULL WING 260 - 100mA 10 *K1 5 - - - - - Dual ENHANCEMENT MODE 150mW - - 15 ns - 2 N-Channel (Dual) Common Source SWITCHING 8 Ω @ 10mA, 4V 1.5V @ 100μA 13pF @ 5V - 35ns - - 35 ns 100mA - - 20V - 0.1A - 30V - 30V - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - 1.5 V - 900μm 2mm 1.25mm - No No SVHC ROHS3 Compliant Lead Free
                UM5K1NTR
                UM5K1NTR

                ROHM Semiconductor
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Diodes Incorporated DMN6066SSD-13
                Mfr. Тип
                DMN6066SSD-13
                Anlielectronics Тип

                		Diodes Incorporated
                MOSFET 2N-CH 60V 3.3A 8SO
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 17 Weeks - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON - 2 14.7 ns -55°C~150°C TJ Tape & Reel (TR) 2017 - e3 yes Active 1 (Unlimited) 8 - EAR99 66mOhm Matte Tin (Sn) - - HIGH RELIABILITY - - 1.8W - GULL WING 260 - - 40 DMN6066SSD 8 - - - - - Dual ENHANCEMENT MODE 2.14W - - 2.7 ns - 2 N-Channel (Dual) SWITCHING 66m Ω @ 4.5A, 10V 3V @ 250μA 502pF @ 30V 10.3nC @ 10V 2.4ns 60V - 5.4 ns 3.3A - - 20V - 4.4A - - - - - 60V - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - 1.5mm 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
                  DMN6066SSD-13
                  DMN6066SSD-13

                  Diodes Incorporated
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Alpha & Omega Semiconductor Inc. AO4821
                  Mfr. Тип
                  AO4821
                  Anlielectronics Тип

                  		Alpha & Omega Semiconductor Inc.
                  MOSFET 2P-CH 12V 9A 8SOIC
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - - - 2 - -55°C~150°C TJ Tape & Reel (TR) 2010 - - - Obsolete 1 (Unlimited) - - - - - - - - - - 2W - - - - - - - - - - - - - - ENHANCEMENT MODE 2W - - - - 2 P-Channel (Dual) - 19m Ω @ 9A, 4.5V 850mV @ 250μA 2100pF @ 6V 23nC @ 4.5V - 12V - - 9A - - 8V - 9A - - - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - - - - RoHS Compliant -
                    AO4821
                    AO4821

                    Alpha & Omega Semiconductor Inc.
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Infineon Technologies IRF5851TRPBF
                    Mfr. Тип
                    IRF5851TRPBF
                    Anlielectronics Тип

                    		Infineon Technologies
                    MOSFET N/P-CH 20V 2.7A 6-TSOP
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 - - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - 6 6-TSOP - - 2.7A 2.2A - - -55°C~150°C TJ Tape & Reel (TR) 2010 HEXFET® - - Obsolete 2 (1 Year) - SMD/SMT - 90mOhm - 150°C -55°C - - - 960mW - - - - - - IRF5851PBF - - - - - - - - 960mW - - - 960mW N and P-Channel - 90mOhm @ 2.7A, 4.5V 1.25V @ 250μA 400pF @ 15V 6nC @ 4.5V - 20V - - 2.7A 1.25V - 12V - - - 20V - 20V 400pF - - - Logic Level Gate 90mOhm 90 mΩ 1.25 V - 900μm 3mm 1.5mm - No No SVHC RoHS Compliant Lead Free
                      IRF5851TRPBF
                      IRF5851TRPBF

                      Infineon Technologies
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Nexperia USA Inc. BUK7K52-60EX
                      Mfr. Тип
                      BUK7K52-60EX
                      Anlielectronics Тип

                      		Nexperia USA Inc.
                      MOSFET 2N-CH 60V 15.4A LFPAK
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 12 Weeks - Surface Mount Surface Mount SOT-1205, 8-LFPAK56 - - - - SILICON - 2 8.4 ns -55°C~175°C TJ Tape & Reel (TR) 2013 - - - Active 1 (Unlimited) 6 - - - - - - - - - 32W - GULL WING NOT SPECIFIED - - NOT SPECIFIED - 8 AEC-Q101; IEC-60134 R-PDSO-G6 - - 2 Dual ENHANCEMENT MODE - - DRAIN 4.3 ns - 2 N-Channel (Dual) SWITCHING 45m Ω @ 5A, 10V 4V @ 1mA 535pF @ 25V 9.2nC @ 10V 5.1ns 60V - 5.4 ns 15.4A - - 20V - - 0.045Ohm - 71A - - 60V 11.6 mJ METAL-OXIDE SEMICONDUCTOR Standard - - - - - - - - - - ROHS3 Compliant -
                        BUK7K52-60EX
                        BUK7K52-60EX

                        Nexperia USA Inc.
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        ON Semiconductor NVMFD5C650NLT1G
                        Mfr. Тип
                        NVMFD5C650NLT1G
                        Anlielectronics Тип

                        		ON Semiconductor
                        MOSFET 2N-CH 60V 111A S08FL
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 48 Weeks ACTIVE (Last Updated: 4 days ago) - Surface Mount 8-PowerTDFN - - - - - 21A Ta 111A Tc - - -55°C~175°C TJ Tape & Reel (TR) 2013 Automotive, AEC-Q101 e3 yes Active 1 (Unlimited) - - - - Tin (Sn) - - - - - - - - NOT SPECIFIED not_compliant - NOT SPECIFIED - - - - - - - - - - - - - 3.5W Ta 125W Tc 2 N-Channel (Dual) - 4.2m Ω @ 20A, 10V 2.2V @ 98μA 2546pF @ 25V 16nC @ 4.5V - 60V - - - - - - - - - - - - - - - - Standard - - - - - - - - - - ROHS3 Compliant -
                          NVMFD5C650NLT1G
                          NVMFD5C650NLT1G

                          ON Semiconductor
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Infineon Technologies IRF7341QTRPBF
                          Mfr. Тип
                          IRF7341QTRPBF
                          Anlielectronics Тип

                          		Infineon Technologies
                          MOSFET 2N-CH 55V 5.1A 8-SOIC
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 8-SO - - 5.1A 2 31 ns - Cut Tape (CT) 2005 HEXFET® - - Obsolete 1 (Unlimited) - - - - - 175°C -55°C - - - 2.4W - - - - - - IRF7341QPBF - - - - - - - - 2.4W - - 9.2 ns 2.4W 2 N-Channel (Dual) - 50mOhm @ 5.1A, 10V 1V @ 250μA (Min) 780pF @ 25V 44nC @ 10V 7.7ns 55V - 12.5 ns 4.7A - - 20V - - - - - - 780pF - - - Logic Level Gate 65mOhm 50 mΩ - - 1.5mm 5mm 4mm - No - RoHS Compliant Lead Free
                            IRF7341QTRPBF
                            IRF7341QTRPBF

                            Infineon Technologies
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            ON Semiconductor FDS6912
                            Mfr. Тип
                            FDS6912
                            Anlielectronics Тип

                            		ON Semiconductor
                            Trans MOSFET N-CH 30V 6A 8-Pin SOIC N T/R
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - LAST SHIPMENTS (Last Updated: 2 days ago) Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 187mg SILICON - 2 18 ns -55°C~150°C TJ Tape & Reel (TR) - PowerTrench® e3 yes Obsolete 1 (Unlimited) 8 SMD/SMT EAR99 28MOhm Tin (Sn) - - - - - 900mW - GULL WING - - - - - - - - - - - Dual ENHANCEMENT MODE 2W - - 8 ns - 2 N-Channel (Dual) SWITCHING 28m Ω @ 6A, 10V 3V @ 250μA 740pF @ 15V 10nC @ 5V 13ns - - 8 ns 6A 2V - 25V - 6A - 30V - 30V - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - 2 V - - - - - No No SVHC RoHS Compliant Lead Free
                              FDS6912
                              FDS6912

                              ON Semiconductor
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Texas Instruments CSD86311W1723
                              Mfr. Тип
                              CSD86311W1723
                              Anlielectronics Тип

                              		Texas Instruments
                              TEXAS INSTRUMENTS CSD86311W1723 Dual MOSFET, Dual N Channel, 4.5 A, 25 V, 0.029 ohm, 4.5 V, 1 V
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 6 Weeks ACTIVE (Last Updated: 3 days ago) Surface Mount Surface Mount 12-UFBGA, DSBGA - 12 - - SILICON - 2 13.2 ns -55°C~150°C TJ Tape & Reel (TR) - NexFET™ e1 yes Active 1 (Unlimited) 12 - EAR99 - Tin/Silver/Copper (Sn/Ag/Cu) - - - 8541.29.00.95 - 1.5W BOTTOM BALL 260 - - NOT SPECIFIED CSD86311 12 - - Not Qualified - - Dual ENHANCEMENT MODE 1.5W - - 5.4 ns - 2 N-Channel (Dual) SWITCHING 39m Ω @ 2A, 8V 1.4V @ 250μA 585pF @ 12.5V 4nC @ 4.5V 4.3ns 25V - 2.9 ns 4.5A 1V - 10V - - 0.051Ohm 25V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - 1 V 13 pF 625μm 0m 0m 375μm - No SVHC ROHS3 Compliant Contains Lead
                                CSD86311W1723
                                CSD86311W1723

                                Texas Instruments
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Diodes Incorporated ZXMHC6A07T8TA
                                Mfr. Тип
                                ZXMHC6A07T8TA
                                Anlielectronics Тип

                                		Diodes Incorporated
                                MOSFET 2N/2P-CH 60V SM8
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 17 Weeks - Surface Mount Surface Mount 8-SMD, Gull Wing - 8 - - SILICON 1.6A 1.3A 4 13 ns -55°C~150°C TJ Tape & Reel (TR) 2004 - e3 yes Active 1 (Unlimited) 8 - EAR99 425mOhm Matte Tin (Sn) - - - - 60V 1.7W DUAL - 260 - 1.8A 40 ZXMHC6A07T8 8 - - - - 4 - ENHANCEMENT MODE 1.7W 2.2A - 1.6 ns 1.3W 2 N and 2 P-Channel (H-Bridge) SWITCHING 300m Ω @ 1.8A, 10V 3V @ 250μA 166pF @ 40V 3.2nC @ 10V 2.3ns - N-CHANNEL AND P-CHANNEL 5.8 ns 1.8A 3V - 20V - - - 60V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - 1.6mm 6.7mm 3.7mm - No No SVHC ROHS3 Compliant Lead Free
                                  ZXMHC6A07T8TA
                                  ZXMHC6A07T8TA

                                  Diodes Incorporated
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  STMicroelectronics STS10DN3LH5
                                  Mfr. Тип
                                  STS10DN3LH5
                                  Anlielectronics Тип

                                  		STMicroelectronics
                                  MOSFET 2N-CH 30V 10A 8-SOIC
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 14 Weeks NRND (Last Updated: 8 months ago) Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - SILICON - 2 13 ns -55°C~150°C TJ Tape & Reel (TR) - STripFET™ V e4 - Active 1 (Unlimited) 8 - EAR99 21MOhm Nickel/Palladium/Gold (Ni/Pd/Au) - - - - - 2.5W - GULL WING 260 - - 30 STS10 8 - - - - - - ENHANCEMENT MODE 2.5W - - 4 ns - 2 N-Channel (Dual) SWITCHING 21m Ω @ 5A, 10V 1V @ 250μA 475pF @ 25V 4.6nC @ 5V 22ns 30V - 2.8 ns 10A - - 22V - - - 30V 40A - - - 50 mJ METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - - No - ROHS3 Compliant Lead Free
                                    STS10DN3LH5
                                    STS10DN3LH5

                                    STMicroelectronics
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    ON Semiconductor FW297-TL-2W
                                    Mfr. Тип
                                    FW297-TL-2W
                                    Anlielectronics Тип

                                    		ON Semiconductor
                                    MOSFET 2N-CH 60V 4.5A 8SOIC
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 2 Weeks ACTIVE (Last Updated: 5 days ago) - Surface Mount 8-SOIC (0.154, 3.90mm Width) - - - - - - - - 150°C TJ Tape & Reel (TR) 2016 - - yes Active 1 (Unlimited) - - - - - - - - - - 1.8W - - - - - - - - - - - - - - - - - - - 1.8W 2 N-Channel (Dual) - 58m Ω @ 4.5A, 10V 2.6V @ 1mA 750pF @ 20V 14nC @ 10V - 60V - - 4.5A - - - - - - - - - - - - - Logic Level Gate, 4V Drive - - - - - - - - - - ROHS3 Compliant Lead Free
                                      FW297-TL-2W
                                      FW297-TL-2W

                                      ON Semiconductor
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      ON Semiconductor FDS8962C
                                      Mfr. Тип
                                      FDS8962C
                                      Anlielectronics Тип

                                      		ON Semiconductor
                                      MOSFET N/P-CH 30V 7A/5A 8SOIC
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 187mg - 7A 5A 2 14 ns -55°C~150°C TJ Tape & Reel (TR) 2002 PowerTrench® - yes Obsolete 1 (Unlimited) - - - - - - - - - - 900mW - - - - 7A - - - - - - - - - - 2W - - - - N and P-Channel - 30m Ω @ 7A, 10V 3V @ 250μA 575pF @ 15V 26nC @ 10V 13ns - - 9 ns 5A - - 20V - - - 30V - - - - - - Logic Level Gate - - - - - - - - - - RoHS Compliant Lead Free
                                        FDS8962C
                                        FDS8962C

                                        ON Semiconductor
                                        RoHS :
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                                        ON Semiconductor NTMFD4C86NT1G
                                        Mfr. Тип
                                        NTMFD4C86NT1G
                                        Anlielectronics Тип

                                        		ON Semiconductor
                                        MOSFET NFET SO8FL 30V 32A 2.1MOH
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 24 Weeks - Surface Mount Surface Mount 8-PowerTDFN - 8 - - - 11.3A 18.1A - - -55°C~150°C TJ Tape & Reel (TR) 2015 - - yes Obsolete 1 (Unlimited) - - - - - - - - - - 1.1W - - - - - - - - - - - - - - - - - - - - 2 N-Channel (Dual) Asymmetrical - 5.4m Ω @ 30A, 10V 2.2V @ 250μA 1153pF @ 15V 22.2nC @ 10V - 30V - - 18.1A - - - - - - - - - - - - - Standard - - - - - - - - - - RoHS Compliant Lead Free
                                          NTMFD4C86NT1G
                                          NTMFD4C86NT1G

                                          ON Semiconductor
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