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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Weight Transistor Element Material Manufacturer Package Identifier Current - Continuous Drain (Id) @ 25℃ Mfr Number of Elements Package Product Status Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Resistance Terminal Finish Additional Feature HTS Code Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Qualification Status Configuration Number of Channels Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max FET Type Transistor Application Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Halogen Free Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Continuous Drain Current (ID) Threshold Voltage JEDEC-95 Code Gate to Source Voltage (Vgs) Max Dual Supply Voltage Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) Dual Supply Voltage Input Capacitance DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology Max Junction Temperature (Tj) FET Feature Drain to Source Resistance Nominal Vgs Feedback Cap-Max (Crss) Height Length Width Thickness Radiation Hardening REACH SVHC RoHS Status Lead Free
ON Semiconductor VEC2616-TL-H
Mfr. Тип
VEC2616-TL-H
Anlielectronics Тип

ON Semiconductor
Trans MOSFET N/P-CH 60V 3A/2.5A 8-Pin VEC T/R
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 - ACTIVE, NOT REC (Last Updated: 1 week ago) - - Surface Mount 8-SMD, Flat Lead - 8 - - - 3A 2.5A - 2 - - 65 ns 150°C TJ Tape & Reel (TR) 2013 - e6 yes Discontinued 1 (Unlimited) - - EAR99 - Tin/Bismuth (Sn/Bi) - - 1W - - - - - - 8 - - - - - Dual - 1W - - - N and P-Channel - 80m Ω @ 1.5A, 10V 2.6V @ 1mA - 505pF @ 20V 10nC @ 10V - 60V - - 2.5A - - 20V - - - - - - - - - - - Logic Level Gate - - - 750μm 2.9mm 2.3mm - No - ROHS3 Compliant Lead Free
    VEC2616-TL-H
    VEC2616-TL-H

    ON Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Infineon Technologies IRFH4255DTRPBF
    Mfr. Тип
    IRFH4255DTRPBF
    Anlielectronics Тип

    		Infineon Technologies
    MOSFET 2N-CH 25V 64A/105A PQFN
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - - Tin Surface Mount Surface Mount 8-PowerVDFN - 8 - - - 64A 105A - 2 - - - -55°C~150°C TJ Tape & Reel (TR) 2013 HEXFET® - - Obsolete 1 (Unlimited) - - EAR99 - - - - 38W - - - - - IRFH4255 - - - - - - Dual - - - - 31W 38W 2 N-Channel (Dual) - 3.2m Ω @ 30A, 10V 2.1V @ 35μA - 1314pF @ 13V 15nC @ 4.5V - 25V - - 30A 1.6V - 20V - - - - - - - - - - - Logic Level Gate - - - 900μm 6mm 5mm - No No SVHC RoHS Compliant Lead Free
      IRFH4255DTRPBF
      IRFH4255DTRPBF

      Infineon Technologies
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Diodes Incorporated ZXMHC3A01N8TC
      Mfr. Тип
      ZXMHC3A01N8TC
      Anlielectronics Тип

      		Diodes Incorporated
      MOSFET 2N/2P-CH 30V 8-SOIC
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 17 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 73.992255mg SILICON - 2.17A 1.64A - 4 - - 12.1 ns -55°C~150°C TJ Tape & Reel (TR) 2009 - e3 yes Active 1 (Unlimited) 8 - EAR99 125mOhm Matte Tin (Sn) - - 870mW DUAL GULL WING 260 - 40 ZXMHC3A01 8 - - - - - - ENHANCEMENT MODE 1.36W - - - 2 N and 2 P-Channel (H-Bridge) SWITCHING 125m Ω @ 2.5A, 10V 3V @ 250μA - 190pF @ 25V 3.9nC @ 10V 2.3ns 30V N-CHANNEL AND P-CHANNEL 2.9 ns 1.64A - - 20V - 2.17A - - - - - 30V - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - 1.5mm 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
        ZXMHC3A01N8TC
        ZXMHC3A01N8TC

        Diodes Incorporated
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Infineon Technologies BSZ215CHXTMA1
        Mfr. Тип
        BSZ215CHXTMA1
        Anlielectronics Тип

        		Infineon Technologies
        MOSFET N/P-CH 20V 8TDSON
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 18 Weeks - - Surface Mount Surface Mount 8-PowerTDFN - 8 - SILICON - 5.1A 3.2A - 2 - - - -55°C~175°C TJ Tape & Reel (TR) 2014 Automotive, AEC-Q101, OptiMOS™ e3 yes Active 1 (Unlimited) 5 - - - Tin (Sn) AVALANCHE RATED - 2.5W DUAL NO LEAD NOT SPECIFIED - NOT SPECIFIED - - - S-PDSO-N5 - SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - DRAIN - - N and P-Channel Complementary - 55m Ω @ 5.1A, 4.5V 1.4V @ 110μA Halogen Free 419pF @ 10V 2.8nC @ 4.5V - 20V N-CHANNEL AND P-CHANNEL - 3.2A - - - -20V 5.1A 0.055Ohm - 20A - - - 11 mJ METAL-OXIDE SEMICONDUCTOR - Logic Level Gate, 2.5V Drive - - - - - - - - - ROHS3 Compliant Lead Free
          BSZ215CHXTMA1
          BSZ215CHXTMA1

          Infineon Technologies
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Diodes Incorporated DMN62D0UDW-7
          Mfr. Тип
          DMN62D0UDW-7
          Anlielectronics Тип

          		Diodes Incorporated
          MOSFET 2N-CH 60V 0.35A
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 16 Weeks - - Surface Mount Surface Mount 6-TSSOP, SC-88, SOT-363 - - - SILICON - - - 2 - - - -55°C~150°C TJ Tape & Reel (TR) 2015 - e3 - Active 1 (Unlimited) 6 - EAR99 - Matte Tin (Sn) HIGH RELIABILITY - 320mW - GULL WING NOT SPECIFIED - NOT SPECIFIED - - AEC-Q101 R-PDSO-G6 - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - 320mW 2 N-Channel (Dual) SWITCHING 2 Ω @ 100mA, 4.5V 1V @ 250μA - 32pF @ 30V 0.5nC @ 4.5V - 60V - - 350mA - - - - 0.35A 2Ohm - - - - 60V - METAL-OXIDE SEMICONDUCTOR - Standard - - - - - - - - - ROHS3 Compliant -
            DMN62D0UDW-7
            DMN62D0UDW-7

            Diodes Incorporated
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            ON Semiconductor FDMS3686S
            Mfr. Тип
            FDMS3686S
            Anlielectronics Тип

            		ON Semiconductor
            MOSFET 30V Asymmetric 2xNCh PowerTrench MOSFET
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 18 Weeks ACTIVE (Last Updated: 3 days ago) - Surface Mount Surface Mount 8-PowerTDFN - 8 90mg SILICON - 13A 23A - 2 - - 23 ns -55°C~150°C TJ Tape & Reel (TR) 2009 PowerTrench® e3 yes Active 1 (Unlimited) 6 - EAR99 - Tin (Sn) - - 1W - - - - - - - - R-PDSO-N6 - - - - ENHANCEMENT MODE 2.5W DRAIN SOURCE - - 2 N-Channel (Dual) Asymmetrical SWITCHING 8m Ω @ 13A, 10V 2.7V @ 250μA - 1785pF @ 10V 29nC @ 10V - - - - 23A - - 20V - 13A - 30V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - 1.05mm 5.1mm 6.1mm - No - ROHS3 Compliant Lead Free
              FDMS3686S
              FDMS3686S

              ON Semiconductor
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Diodes Incorporated ZXMN3G32DN8TA
              Mfr. Тип
              ZXMN3G32DN8TA
              Anlielectronics Тип

              		Diodes Incorporated
              MOSFET 2N-CH 30V 5.5A 8SOIC
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 17 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 73.992255mg SILICON - 5.5A - 2 - - 14 ns -55°C~150°C TJ Tape & Reel (TR) 2008 - e3 yes Active 1 (Unlimited) 8 SMD/SMT EAR99 45mOhm Matte Tin (Sn) - - 2.1W - GULL WING 260 - 40 - 8 - - - - 2 Dual ENHANCEMENT MODE 2.1W - 2.5 ns 1.8W 2 N-Channel (Dual) SWITCHING 28m Ω @ 6A, 10V 3V @ 250μA - 472pF @ 15V 10.5nC @ 10V 3.1ns - - 9.7 ns 7.1A 3V - 20V - 5.5A - 30V - 30V - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - 3 V - 1.5mm 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
                ZXMN3G32DN8TA
                ZXMN3G32DN8TA

                Diodes Incorporated
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Diodes Incorporated DMPH6050SSD-13
                Mfr. Тип
                DMPH6050SSD-13
                Anlielectronics Тип

                		Diodes Incorporated
                MOSFET 2 P-CHANNEL 5.2A 8SO
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 18 Weeks - - - Surface Mount 8-SOIC (0.154, 3.90mm Width) - - - - - 5.2A Ta - - - - - -55°C~175°C TJ Tape & Reel (TR) - Automotive, AEC-Q101 e3 - Active - - - EAR99 - Matte Tin (Sn) - - - - - NOT SPECIFIED - NOT SPECIFIED - - - - - - - - - - - - - 2 P-Channel (Dual) - 48m Ω @ 5A, 10V 3V @ 250μA - 1525pF @ 30V 14.5nC @ 4.5V - - - - - - - - - - - - - - - - - - - Standard - - - - - - - - - ROHS3 Compliant -
                  DMPH6050SSD-13
                  DMPH6050SSD-13

                  Diodes Incorporated
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  ROHM Semiconductor UM6K34NTCN
                  Mfr. Тип
                  UM6K34NTCN
                  Anlielectronics Тип

                  		ROHM Semiconductor
                  MOSFET 2N-CH 50V 0.2A UMT6
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 16 Weeks - - Surface Mount Surface Mount 6-TSSOP, SC-88, SOT-363 - - - SILICON - - - 2 - - - 150°C TJ Cut Tape (CT) 2011 - - yes Active 1 (Unlimited) 6 - EAR99 - - - - 120mW - GULL WING 260 - 10 - 6 - R-PDSO-G6 Not Qualified SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - 120mW 2 N-Channel (Dual) SWITCHING 2.2 Ω @ 200mA, 4.5V 800mV @ 1mA - 26pF @ 10V - - 50V - - 200mA - - - - 0.2A 2.8Ohm - - - - 50V - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate, 0.9V Drive - - - - - - - - - ROHS3 Compliant Lead Free
                    UM6K34NTCN
                    UM6K34NTCN

                    ROHM Semiconductor
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    ON Semiconductor FDZ1416NZ
                    Mfr. Тип
                    FDZ1416NZ
                    Anlielectronics Тип

                    		ON Semiconductor
                    Trans MOSFET N-CH 4-Pin WLCSP T/R
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 10 Weeks ACTIVE (Last Updated: 1 day ago) - Surface Mount Surface Mount 4-XFBGA, WLCSP - 4 22.24mg SILICON - - - 2 - - 37 ns -55°C~150°C TJ Tape & Reel (TR) - PowerTrench® e1 yes Active 1 (Unlimited) 4 - EAR99 - Tin/Silver/Copper (Sn/Ag/Cu) - - 1.7W BOTTOM BALL NOT SPECIFIED - NOT SPECIFIED - - - - - - 1 - ENHANCEMENT MODE 1.7W - 9.5 ns 500mW 2 N-Channel (Dual) Common Drain SWITCHING - 1.3V @ 250μA - - 17nC @ 4.5V 12ns 24V - 16 ns 7A - - 12V - 7A - - - - 1.14nF - - METAL-OXIDE SEMICONDUCTOR - Standard 23mOhm - - 150μm 1.6mm 1.4mm - - - ROHS3 Compliant -
                      FDZ1416NZ
                      FDZ1416NZ

                      ON Semiconductor
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Texas Instruments CSD88539NDT
                      Mfr. Тип
                      CSD88539NDT
                      Anlielectronics Тип

                      		Texas Instruments
                      TEXAS INSTRUMENTS CSD88539NDTDual MOSFET, Dual N Channel, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 6 Weeks ACTIVE (Last Updated: 4 days ago) Gold Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 540.001716mg SILICON - - - 2 - - 14 ns -55°C~150°C TJ Tape & Reel (TR) - NexFET™ e4 yes Active 1 (Unlimited) 8 - EAR99 - - AVALANCHE RATED - 2.1W - GULL WING 260 - NOT SPECIFIED CSD88539 - - - - - 2 Dual ENHANCEMENT MODE - - 5 ns - 2 N-Channel (Dual) SWITCHING 28m Ω @ 5A, 10V 3.6V @ 250μA - 741pF @ 30V 9.4nC @ 10V 9ns 60V - 4 ns 15A 3V - 20V - 6.3A 0.034Ohm - 46A - - 60V - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - 1.75mm 4.9mm 3.91mm 1.58mm - No SVHC ROHS3 Compliant Lead Free
                        CSD88539NDT
                        CSD88539NDT

                        Texas Instruments
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Alpha & Omega Semiconductor Inc. AON6926
                        Mfr. Тип
                        AON6926
                        Anlielectronics Тип

                        		Alpha & Omega Semiconductor Inc.
                        MOSFET 2N-CH 30V 11A/12A 8DFN
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 18 Weeks - - Surface Mount Surface Mount 8-PowerVDFN - 8 - - - 11A 12A - - - - - -55°C~150°C TJ Tape & Reel (TR) 2007 - - - Active 1 (Unlimited) - - - - - - - 2.1W - - - - - - - - - - - - - ENHANCEMENT MODE - - - 1.9W 2.1W 2 N-Channel (Half Bridge) - 11m Ω @ 20A, 10V 2.5V @ 250μA - 1380pF @ 15V 24nC @ 10V - 30V - - 12A - - - - 50A - - - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - - - ROHS3 Compliant -
                          AON6926
                          AON6926

                          Alpha & Omega Semiconductor Inc.
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          onsemi CPH3422-TL-E
                          Mfr. Тип
                          CPH3422-TL-E
                          Anlielectronics Тип

                          		onsemi
                          N-CHANNEL MOSFET
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 - - - - - - - - - - - - onsemi - Bulk Active - - - - * - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                            CPH3422-TL-E
                            CPH3422-TL-E

                            onsemi
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            ON Semiconductor FDMS3660AS
                            Mfr. Тип
                            FDMS3660AS
                            Anlielectronics Тип

                            		ON Semiconductor
                            MOSFET COMPUTING MOSFET
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 13 Weeks ACTIVE (Last Updated: 3 days ago) - Surface Mount Surface Mount 8-PowerTDFN - 8 171mg SILICON - 13A 30A - 2 - - 38 ns -55°C~150°C TJ Tape & Reel (TR) 2017 PowerTrench® e3 yes Active 1 (Unlimited) 6 - EAR99 - Tin (Sn) - - 2.5W - FLAT - - - - - - R-PDSO-F6 - SERIES, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE 2.5W DRAIN SOURCE - 1W 2 N-Channel (Dual) SWITCHING 8m Ω @ 13A, 10V 2.7V @ 250μA - 2230pF @ 15V 30nC @ 10V 5ns - - 5 ns 30A - MO-240AA 20V - 13A - 30V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 70 pF 1.1mm 5mm 5.9mm - No - ROHS3 Compliant -
                              FDMS3660AS
                              FDMS3660AS

                              ON Semiconductor
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Alpha & Omega Semiconductor Inc. AO7600
                              Mfr. Тип
                              AO7600
                              Anlielectronics Тип

                              		Alpha & Omega Semiconductor Inc.
                              MOSFET N/P-CH 20V SC70-6
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 - - - Surface Mount Surface Mount 6-TSSOP, SC-88, SOT-363 - 6 - - SC-70-6L 900mA 600mA - 2 - - - -55°C~150°C TJ Tape & Reel (TR) 2015 - - - Obsolete 1 (Unlimited) - - - - - - - 300mW - - - - - - - - - - - - - - 300mW - - - N and P-Channel - 300m Ω @ 900mA, 4.5V 900mV @ 250μA - 120pF @ 10V 1.9nC @ 4.5V - - - - 600mA 500mV - 8V - - - 20V - - - - - - 150°C Logic Level Gate - - - 1.1mm - - - No - RoHS Compliant -
                                AO7600
                                AO7600

                                Alpha & Omega Semiconductor Inc.
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Diodes Incorporated DMC25D0UVT-7
                                Mfr. Тип
                                DMC25D0UVT-7
                                Anlielectronics Тип

                                		Diodes Incorporated
                                MOSFET N/P-CH 25V/30V TSOT26
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 15 Weeks - - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - - - - - 400mA 3.2A - - - - - -55°C~150°C TJ Tape & Reel (TR) 2015 - e3 - Active 1 (Unlimited) - - EAR99 - Matte Tin (Sn) - - 1.2W - - NOT SPECIFIED - NOT SPECIFIED - - - - - - - - - - - - - N and P-Channel - 4 Ω @ 400mA, 4.5V 1.5V @ 250μA - 26.2pF @ 10V 0.7nC @ 8V - 25V 30V - - 3.2A - - - - - - - - - - - - - - Standard - - - - - - - - - ROHS3 Compliant -
                                  DMC25D0UVT-7
                                  DMC25D0UVT-7

                                  Diodes Incorporated
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Diodes Incorporated DMP2075UFDB-7
                                  Mfr. Тип
                                  DMP2075UFDB-7
                                  Anlielectronics Тип

                                  		Diodes Incorporated
                                  MOSFET P-CH 20V 6UDFN
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 23 Weeks - - - Surface Mount 6-UDFN Exposed Pad - - - - - 3.8A Ta - - - - - -55°C~150°C TJ Tape & Reel (TR) 2017 - e4 - Active 1 (Unlimited) - - EAR99 - Nickel/Palladium/Gold (Ni/Pd/Au) - - - - - NOT SPECIFIED - NOT SPECIFIED - - - - - - - - - - - - 700mW Ta 2 P-Channel (Dual) - 75m Ω @ 2.9A, 4.5V 1.4V @ 250μA - 642pF @ 10V 8.8nC @ 4.5V - 20V - - - - - - - - - - - - - - - - - Standard - - - - - - - - - ROHS3 Compliant -
                                    DMP2075UFDB-7
                                    DMP2075UFDB-7

                                    Diodes Incorporated
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Diodes Incorporated DMN5L06DMKQ-7
                                    Mfr. Тип
                                    DMN5L06DMKQ-7
                                    Anlielectronics Тип

                                    		Diodes Incorporated
                                    MOSFET 2N-CH 50V 305MA SOT26
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 16 Weeks - - Surface Mount Surface Mount SOT-23-6 - - - SILICON - - - 2 - - - -65°C~150°C TJ Tape & Reel (TR) 2012 - e3 - Active 1 (Unlimited) 6 - EAR99 - Matte Tin (Sn) HIGH RELIABILITY - 400mW - GULL WING NOT SPECIFIED - NOT SPECIFIED - - AEC-Q101 R-PDSO-G6 - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - 400mW 2 N-Channel (Dual) SWITCHING 2 Ω @ 50mA, 5V 1V @ 250μA - 50pF @ 25V - - 50V - - 305mA - - - - 0.305A 3Ohm - - - - 50V - METAL-OXIDE SEMICONDUCTOR - Standard - - 5 pF - - - - - - ROHS3 Compliant -
                                      DMN5L06DMKQ-7
                                      DMN5L06DMKQ-7

                                      Diodes Incorporated
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      Infineon Technologies AUIRF7303Q
                                      Mfr. Тип
                                      AUIRF7303Q
                                      Anlielectronics Тип

                                      		Infineon Technologies
                                      MOSFET 2N-CH 30V 5.3A 8SOIC
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 - - - - Surface Mount 8-SOIC (0.154, 3.90mm Width) YES - - SILICON - 5.3A - 2 - - - -55°C~175°C TJ Tube 2011 HEXFET® e3 - Obsolete 1 (Unlimited) 8 - EAR99 - MATTE TIN HIGH RELIABILITY 8541.29.00.95 - - GULL WING 260 compliant 40 - - - R-PDSO-G8 Not Qualified SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - 2.4W 2 N-Channel (Dual) SWITCHING 50m Ω @ 2.7A, 10V 3V @ 100μA - 515pF @ 25V 21nC @ 10V - 30V - - - - MS-012AA - - 4.9A 0.05Ohm - 20A - - 30V - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - - - RoHS Compliant -
                                        AUIRF7303Q
                                        AUIRF7303Q

                                        Infineon Technologies
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        Nexperia USA Inc. NX138BKSX
                                        Mfr. Тип
                                        NX138BKSX
                                        Anlielectronics Тип

                                        		Nexperia USA Inc.
                                        MOSFET 2 N-CH 60V 210MA 6TSSOP
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 4 Weeks - - - Surface Mount 6-TSSOP, SC-88, SOT-363 YES - - SILICON - 210mA Ta - 2 - - - -55°C~150°C TJ Tape & Reel (TR) 2016 - - - Active 1 (Unlimited) 6 - - - - - - - - GULL WING - - - - 6 AEC-Q101; IEC-60134 R-PDSO-G6 - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - 320mW 2 N-Channel (Dual) SWITCHING 3.5 Ω @ 200mA, 10V 1.5V @ 250μA - 20pF @ 30V 0.7nC @ 10V - 60V - - - - - - - 0.21A - - - - - 60V - METAL-OXIDE SEMICONDUCTOR - Standard - - - - - - - - - ROHS3 Compliant -
                                          NX138BKSX
                                          NX138BKSX

                                          Nexperia USA Inc.
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - FETs, MOSFETs - Arrays definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - Arrays Product Listing: VEC2616-TL-H,IRFH4255DTRPBF,ZXMHC3A01N8TC,BSZ215CHXTMA1,DMN62D0UDW-7.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - FETs, MOSFETs - Arrays has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.