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Классификация Марка Марка О Anli Запрос цены
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Weight Transistor Element Material Current - Continuous Drain (Id) @ 25℃ Number of Elements Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Resistance Terminal Finish Additional Feature Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Number of Functions Terminal Pitch Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Number of Outputs Qualification Status Output Type Max Output Current Input Voltage-Nom Configuration Number of Channels Analog IC - Other Type Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max Max Output Voltage Min Input Voltage FET Type Transistor Application Input Voltage (Max) Rds On (Max) @ Id, Vgs Max Input Voltage Vgs(th) (Max) @ Id Control Technique Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Supply Current-Max (Isup) Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Switcher Configuration Continuous Drain Current (ID) Threshold Voltage Gate to Source Voltage (Vgs) Max Dual Supply Voltage Switching Frequency-Max Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) Dual Supply Voltage DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology Power Dissipation-Max (Abs) Max Junction Temperature (Tj) FET Feature Drain to Source Resistance Nominal Vgs Height Length Width Thickness Radiation Hardening REACH SVHC RoHS Status Lead Free
ON Semiconductor EFC4626R-TR
Mfr. Тип
EFC4626R-TR
Anlielectronics Тип

ON Semiconductor
MOSFET NCH NCH 2.5V DRIVE
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 10 Weeks ACTIVE (Last Updated: 2 days ago) - Surface Mount Surface Mount 4-XFBGA - 4 - - - - 22 μs 150°C TJ Tape & Reel (TR) - - - yes Active 1 (Unlimited) - - EAR99 - - - - 1.4W - - NOT SPECIFIED - - - - NOT SPECIFIED - - - - - - - - - - 2 - - - - - 20 ns - - - 2 N-Channel (Dual) Common Drain - - - - - - - 7.5nC @ 4.5V 350ns - 24V - 38.4 μs - - - 10V - - 5A - - - - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate, 2.5V Drive 37.5mOhm - - - - - - - ROHS3 Compliant Lead Free
    EFC4626R-TR
    EFC4626R-TR

    ON Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Texas Instruments CSD87588NT
    Mfr. Тип
    CSD87588NT
    Anlielectronics Тип

    		Texas Instruments
    Synchronous Buck NexFET Power Block 5-Pin PTAB T/R
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 8 Weeks ACTIVE (Last Updated: 3 days ago) Gold Surface Mount Surface Mount 5-LGA - 5 - - - - 20.1 ns -55°C~150°C TJ Tape & Reel (TR) - NexFET™ e4 yes Active 1 (Unlimited) 5 - EAR99 - - - - 6W BOTTOM NO LEAD 260 1 - - - NOT SPECIFIED CSD87588 - - - 1 - Adjustable 25A 12V - 2 SWITCHING REGULATOR Dual - - - 12.1 ns - 1.3V -800mV 2 N-Channel (Half Bridge) - - 9.6m Ω @ 15A, 10V 24V 1.9V @ 250μA PULSE WIDTH MODULATION 736pF @ 15V 4.1nC @ 4.5V 36.7ns - 30V - 6.3 ns BUCK 25A - 20V - - - - 30V - - - - - - - Logic Level Gate - - 480μm 5mm 2.5mm 400μm - - ROHS3 Compliant Lead Free
      CSD87588NT
      CSD87588NT

      Texas Instruments
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Nexperia USA Inc. PMCPB5530X,115
      Mfr. Тип
      PMCPB5530X,115
      Anlielectronics Тип

      		Nexperia USA Inc.
      MOSFET N/P-CH 20V 6HUSON
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 8 Weeks - - - Surface Mount 6-UDFN Exposed Pad YES 6 - SILICON 4A Ta 3.4A Ta 2 40 ns -55°C~150°C TJ Tape & Reel (TR) 2012 - e3 - Active 1 (Unlimited) 6 - - - Tin (Sn) - - 490mW - - - - - - - - - 6 - - - - - - - - 2 - Dual ENHANCEMENT MODE - DRAIN 4 ns - - - N and P-Channel SWITCHING - 34m Ω @ 3A, 4.5V - 900mV @ 250μA - 660pF @ 10V 21.7nC @ 4.5V 15ns - - N-CHANNEL AND P-CHANNEL 16 ns - 3.4A - -650mV - - 4A 0.034Ohm 20V - - - - METAL-OXIDE SEMICONDUCTOR - - - - - - - - - No - ROHS3 Compliant Lead Free
        PMCPB5530X,115
        PMCPB5530X,115

        Nexperia USA Inc.
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Diodes Incorporated DMN2016LFG-7
        Mfr. Тип
        DMN2016LFG-7
        Anlielectronics Тип

        		Diodes Incorporated
        MOSFET 2N-CH 20V 5.2A 8UDFN
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 16 Weeks - - Surface Mount Surface Mount 8-PowerUDFN - 8 - SILICON - 2 84.5 ns -55°C~150°C TJ Tape & Reel (TR) 2012 - e4 yes Active 1 (Unlimited) 5 - EAR99 18mOhm Nickel/Palladium/Gold (Ni/Pd/Au) HIGH RELIABILITY - 770mW - - 260 - - - - 40 DMN2016L - AEC-Q101 S-PDSO-N5 - - - - - - 2 - Dual ENHANCEMENT MODE - - 2.6 ns - - - 2 N-Channel (Dual) Common Drain SWITCHING - 18m Ω @ 6A, 4.5V - 1.1V @ 250μA - 1472pF @ 10V 16nC @ 4.5V 13.2ns - 20V - 46.8 ns - 5.2A - 8V - - - - - - - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - - - - - No No SVHC ROHS3 Compliant Lead Free
          DMN2016LFG-7
          DMN2016LFG-7

          Diodes Incorporated
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Diodes Incorporated ZXMD63N02XTA
          Mfr. Тип
          ZXMD63N02XTA
          Anlielectronics Тип

          		Diodes Incorporated
          MOSFET 2N-CH 20V 2.5A 8-MSOP
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 - - - Surface Mount Surface Mount 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) - 8 139.989945mg SILICON 2.5A 2 13.5 ns -55°C~150°C TJ Tape & Reel (TR) 2006 - e3 yes Obsolete 1 (Unlimited) 8 - EAR99 130mOhm Matte Tin (Sn) - 20V 1.04W - GULL WING 260 - - - 2.4A 40 - 8 - - - - - - - - - - - ENHANCEMENT MODE 1.25W - 3.4 ns - - - 2 N-Channel (Dual) SWITCHING - 130m Ω @ 1.7A, 4.5V - 3V @ 250μA - 700pF @ 15V 6nC @ 4.5V 8.1ns - - - 8.1 ns - 2.4A - 12V - - - - 20V - - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - 950μm 3.1mm 3.1mm - No No SVHC ROHS3 Compliant Lead Free
            ZXMD63N02XTA
            ZXMD63N02XTA

            Diodes Incorporated
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Diodes Incorporated DMP3056LSDQ-13
            Mfr. Тип
            DMP3056LSDQ-13
            Anlielectronics Тип

            		Diodes Incorporated
            MOSFETDUAL P-CHAN 30V SO-8
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 23 Weeks - - - Surface Mount 8-SOIC (0.154, 3.90mm Width) - - - - 6.9A Ta - - -55°C~150°C TJ Tape & Reel (TR) 2008 Automotive, AEC-Q101 e3 - Active 1 (Unlimited) - - EAR99 - Matte Tin (Sn) - - - - - NOT SPECIFIED - - - - NOT SPECIFIED - - - - - - - - - - - - - - - - - 2.5W - - 2 P-Channel (Dual) - - 45m Ω @ 6A, 10V - 2.1V @ 250μA - 722pF @ 25V 13.7nC @ 4.5V - - 30V - - - - - - - - - - - - - - - - - - Standard - - - - - - - No SVHC ROHS3 Compliant -
              DMP3056LSDQ-13
              DMP3056LSDQ-13

              Diodes Incorporated
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Nexperia USA Inc. BUK9K35-60E,115
              Mfr. Тип
              BUK9K35-60E,115
              Anlielectronics Тип

              		Nexperia USA Inc.
              BUK9K35-60E - Dual N-channel 60 V, 35 mO logic level MOSFET
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 12 Weeks - Tin - Surface Mount SOT-1205, 8-LFPAK56 YES 8 - SILICON - 2 3.9 ns -55°C~175°C TJ Tape & Reel (TR) 2014 Automotive, AEC-Q101, TrenchMOS™ e3 - Active 1 (Unlimited) 6 - - - - AVALANCHE RATED - 38W - GULL WING - - - - - - - 8 AEC-Q101; IEC-60134 R-PDSO-G6 - - - - - - 2 - Dual ENHANCEMENT MODE 38W DRAIN 20.5 ns - - - 2 N-Channel (Dual) SWITCHING - 32m Ω @ 5A, 10V - 2.1V @ 1mA - 1081pF @ 25V 14.2nC @ 10V 3.7ns - - - 10 ns - 22A - 10V 60V - - 0.035Ohm - 90A - - 19.5 mJ METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - - - - - No - ROHS3 Compliant -
                BUK9K35-60E,115
                BUK9K35-60E,115

                Nexperia USA Inc.
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Diodes Incorporated DMN2029USD-13
                Mfr. Тип
                DMN2029USD-13
                Anlielectronics Тип

                		Diodes Incorporated
                MOSFET 2N-CH 20V 5.8A 8SO
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 23 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - SILICON - 2 119.3 ns -55°C~150°C TJ Cut Tape (CT) 2013 - e3 - Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) HIGH RELIABILITY - 1.2W - GULL WING 260 - - - - 30 - - AEC-Q101 - - - - - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - - 16.5 ns - - - 2 N-Channel (Dual) SWITCHING - 25m Ω @ 6.5A, 4.5V - 1.5V @ 250μA - 1171pF @ 10V 18.6nC @ 8V 33.3ns - 20V - 53.5 ns - 5.8A - 8V - - - 0.025Ohm - - - 20V - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - 1.5mm 4.95mm 3.95mm - No No SVHC ROHS3 Compliant -
                  DMN2029USD-13
                  DMN2029USD-13

                  Diodes Incorporated
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Diodes Incorporated ZXMHC6A07N8TC
                  Mfr. Тип
                  ZXMHC6A07N8TC
                  Anlielectronics Тип

                  		Diodes Incorporated
                  MOSFET 2N/2P-CH 60V 8-SOIC
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 17 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 73.992255mg SILICON 1.39A 1.28A 4 13 ns -55°C~150°C TJ Tape & Reel (TR) 2009 - e3 yes Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - - 870mW DUAL GULL WING 260 - - - - 40 ZXMHC6A07 8 - - - - - - - - - - - ENHANCEMENT MODE 1.36W - 1.6 ns - - - 2 N and 2 P-Channel (H-Bridge) SWITCHING - 250m Ω @ 1.8A, 10V - 3V @ 250μA - 166pF @ 40V 3.2nC @ 10V 2.3ns - 60V N-CHANNEL AND P-CHANNEL 5.8 ns - 1.28A - 20V - - 1.39A 0.25Ohm -60V - - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - 1.5mm 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
                    ZXMHC6A07N8TC
                    ZXMHC6A07N8TC

                    Diodes Incorporated
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Diodes Incorporated ZXMP6A17DN8TA
                    Mfr. Тип
                    ZXMP6A17DN8TA
                    Anlielectronics Тип

                    		Diodes Incorporated
                    Trans MOSFET P-CH 60V 3.42A Automotive 8-Pin SOIC T/R
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 17 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 73.992255mg SILICON 2.7A 2 26.2 ns -55°C~150°C TJ Tape & Reel (TR) 2006 - e3 yes Active 1 (Unlimited) 8 - EAR99 125mOhm Matte Tin (Sn) - -60V 2.15W - GULL WING 260 - - - -3.1A 40 - 8 - - - - - - - - 2 - Dual ENHANCEMENT MODE 2.15W DRAIN 2.6 ns 1.81W - - 2 P-Channel (Dual) SWITCHING - 125m Ω @ 2.3A, 10V - 1V @ 250μA (Min) - 637pF @ 30V 17.7nC @ 10V 3.4ns - 60V - 11.3 ns - 3.2A - 20V - - - - - 11.1A - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - 1.5mm 5mm 4mm - No No SVHC ROHS3 Compliant Contains Lead
                      ZXMP6A17DN8TA
                      ZXMP6A17DN8TA

                      Diodes Incorporated
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      ROHM Semiconductor TT8J11TCR
                      Mfr. Тип
                      TT8J11TCR
                      Anlielectronics Тип

                      		ROHM Semiconductor
                      MOSFET 2P-CH 12V 3.5A TSST8
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 10 Weeks - - Surface Mount Surface Mount 8-SMD, Flat Lead - - - SILICON - 2 - 150°C TJ Cut Tape (CT) 2012 - - yes Not For New Designs 1 (Unlimited) 8 - EAR99 - - - - 650mW - - NOT SPECIFIED - - - - NOT SPECIFIED - 8 - R-PDSO-F8 - - - - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - - - 650mW - - 2 P-Channel (Dual) SWITCHING - 43m Ω @ 3.5A, 4.5V - 1V @ 1mA - 2600pF @ 6V 22nC @ 4.5V - - 12V - - - 3.5A - - - - - 0.043Ohm - 12A - 12V - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate, 1.5V Drive - - - - - - - - ROHS3 Compliant Lead Free
                        TT8J11TCR
                        TT8J11TCR

                        ROHM Semiconductor
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Texas Instruments CSD87335Q3DT
                        Mfr. Тип
                        CSD87335Q3DT
                        Anlielectronics Тип

                        		Texas Instruments
                        MOSFET 2N-CH 30V 25A
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 6 Weeks ACTIVE (Last Updated: 6 days ago) - Surface Mount Surface Mount 8-PowerLDFN - 8 - - - - - -55°C~150°C TJ Tape & Reel (TR) - NexFET™ e3 yes Active 1 (Unlimited) 8 - - - Matte Tin (Sn) - - 6W - NO LEAD 260 1 0.65mm not_compliant - NOT SPECIFIED CSD87335 - - - - - - - 12V - - SWITCHING CONTROLLER - - - - - - - - 2 N-Channel (Dual) - 27V - - 1.9V @ 250μA PULSE WIDTH MODULATION 1050pF @ 15V 7.4nC @ 4.5V - 20mA 30V - - BUCK 25A 750mV - - 1500kHz - - - - - - - - - - Standard 6.7mOhm - - 3.3mm 3.3mm 1.5mm - No SVHC ROHS3 Compliant Contains Lead
                          CSD87335Q3DT
                          CSD87335Q3DT

                          Texas Instruments
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          STMicroelectronics STS8DN6LF6AG
                          Mfr. Тип
                          STS8DN6LF6AG
                          Anlielectronics Тип

                          		STMicroelectronics
                          MOSFET 2 N-CHANNEL 60V 8A 8SO
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 20 Weeks ACTIVE (Last Updated: 8 months ago) - - Surface Mount 8-SOIC (0.154, 3.90mm Width) YES - - SILICON 8A Ta 2 - -55°C~175°C TJ Tape & Reel (TR) - Automotive, AEC-Q101, STripFET™ F6 - - Active 1 (Unlimited) 8 - - - - - - - - GULL WING NOT SPECIFIED - - - - NOT SPECIFIED STS8DN - - R-PDSO-G8 - - - - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - - - 3.2W - - 2 N-Channel (Dual) SWITCHING - 24m Ω @ 4A, 10V - 2.5V @ 250μA - 1340pF @ 25V 27nC @ 10V - - 60V - - - - - - - - 8A 0.026Ohm - 32A - 60V 72 mJ METAL-OXIDE SEMICONDUCTOR 3.2W - Logic Level Gate - - - - - - - - ROHS3 Compliant -
                            STS8DN6LF6AG
                            STS8DN6LF6AG

                            STMicroelectronics
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Diodes Incorporated DMC1029UFDB-7
                            Mfr. Тип
                            DMC1029UFDB-7
                            Anlielectronics Тип

                            		Diodes Incorporated
                            MOSFET N/P-CH 12V 6UDFN
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - - Gold Surface Mount Surface Mount 6-UDFN Exposed Pad - 6 - SILICON 5.6A 3.8A 2 - -55°C~150°C TJ Tape & Reel (TR) - - e4 - Active 1 (Unlimited) 6 - EAR99 - - - - 1.4W DUAL NO LEAD 260 - - - - 30 - - - - - - - - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - DRAIN - - - - N and P-Channel SWITCHING - 29m Ω @ 5A, 4.5V - 1V @ 250μA - 914pF @ 6V 19.6nC @ 8V - - 12V N-CHANNEL AND P-CHANNEL - - 3.8A - - - - - 0.029Ohm - - - 12V - METAL-OXIDE SEMICONDUCTOR - - Standard - - - - - - - - ROHS3 Compliant -
                              DMC1029UFDB-7
                              DMC1029UFDB-7

                              Diodes Incorporated
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              ON Semiconductor VEC2415-TL-W
                              Mfr. Тип
                              VEC2415-TL-W
                              Anlielectronics Тип

                              		ON Semiconductor
                              MOSFET 2N-CH 60V 3A VEC8
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 8 Weeks ACTIVE (Last Updated: 1 week ago) - Surface Mount Surface Mount 8-SMD, Flat Lead - 8 - - - - - 150°C TJ Tape & Reel (TR) 2015 - - yes Active 1 (Unlimited) - - - - - - - 1W - - - - - not_compliant - - - - - - - - - - - - - - - - - - - 1W - - 2 N-Channel (Dual) - - 80m Ω @ 1.5A, 10V - 2.6V @ 1mA - 505pF @ 20V 10nC @ 10V - - 60V - - - 3A 2.6V - - - - - - - - - - - - - Logic Level Gate, 4V Drive - - - - - - - No SVHC ROHS3 Compliant Lead Free
                                VEC2415-TL-W
                                VEC2415-TL-W

                                ON Semiconductor
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                ON Semiconductor MCH6664-TL-W
                                Mfr. Тип
                                MCH6664-TL-W
                                Anlielectronics Тип

                                		ON Semiconductor
                                ON SEMICONDUCTOR MCH6664-TL-W Dual MOSFET, Dual P Channel, -1.5 A, -30 V, 0.458 ohm, -4 V, -2.6 V
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 7 Weeks ACTIVE (Last Updated: 1 day ago) - Surface Mount Surface Mount 6-SMD, Flat Leads - 6 7.512624mg - - 2 12 ns 150°C TJ Tape & Reel (TR) 2015 - e6 yes Active 1 (Unlimited) - - EAR99 - Tin/Bismuth (Sn/Bi) - - 800mW - - NOT SPECIFIED - - - - NOT SPECIFIED - - - - - - - - - - - - Dual - 800mW - 4 ns - - - 2 P-Channel (Dual) - - 325m Ω @ 800mA, 10V - 2.6V @ 1mA - 82pF @ 10V 2.2nC @ 10V 3.3ns - 30V - 5.4 ns - 1.5A -2.6V 20V - - - - - - - - - - - - Logic Level Gate - - 850μm 2mm 1.6mm - - No SVHC ROHS3 Compliant Lead Free
                                  MCH6664-TL-W
                                  MCH6664-TL-W

                                  ON Semiconductor
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  ON Semiconductor NTZD3152PT1H
                                  Mfr. Тип
                                  NTZD3152PT1H
                                  Anlielectronics Тип

                                  		ON Semiconductor
                                  Trans MOSFET P-CH 20V 0.43A T/R
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 15 Weeks - - - Surface Mount SOT-563, SOT-666 YES 6 8.193012mg SILICON - 2 35 ns -55°C~150°C TJ Tape & Reel (TR) 2006 - e3 yes Obsolete 1 (Unlimited) 6 - EAR99 - Tin (Sn) ESD PROTECTION, LOW THRESHOLD - 250mW - FLAT NOT SPECIFIED - - - - NOT SPECIFIED - 6 - - - - - - - - - - Dual ENHANCEMENT MODE 280mW - 10 ns - - - 2 P-Channel (Dual) SWITCHING - 900m Ω @ 430mA, 4.5V - 1V @ 250μA - 175pF @ 16V 2.5nC @ 4.5V 12ns - 20V - 19 ns - 430mA - 6V - - 0.43A 0.9Ohm - - - - - METAL-OXIDE SEMICONDUCTOR - - Standard - - - - - - - - RoHS Compliant -
                                    NTZD3152PT1H
                                    NTZD3152PT1H

                                    ON Semiconductor
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    ON Semiconductor FDS8960C
                                    Mfr. Тип
                                    FDS8960C
                                    Anlielectronics Тип

                                    		ON Semiconductor
                                    MOSFET 35V Dual N & P-Chl PwrTrnch #174 MOSFET
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 - LAST SHIPMENTS (Last Updated: 1 week ago) Tin Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 230.4mg SILICON 7A 5A 2 20 ns -55°C~150°C TJ Tape & Reel (TR) 2005 PowerTrench® e3 yes Obsolete 1 (Unlimited) 8 SMD/SMT EAR99 24MOhm - FAST SWITCHING - 2W DUAL GULL WING - - - - 7A - - - - - - - - - - - 2 - - ENHANCEMENT MODE 2W - - 900mW - - N and P-Channel SWITCHING - 24m Ω @ 7A, 10V - 3V @ 250μA - 570pF @ 15V 7.7nC @ 5V 16ns - - N-CHANNEL AND P-CHANNEL 5 ns - 7A 1V 25V - - 7A - 35V - 35V - - METAL-OXIDE SEMICONDUCTOR - 150°C Logic Level Gate - 2 V 1.75mm 4.9mm 3.9mm - No No SVHC RoHS Compliant Lead Free
                                      FDS8960C
                                      FDS8960C

                                      ON Semiconductor
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      ON Semiconductor NTGD4161PT1G
                                      Mfr. Тип
                                      NTGD4161PT1G
                                      Anlielectronics Тип

                                      		ON Semiconductor
                                      MOSFET 2P-CH 30V 1.5A 6-TSOP
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 - LAST SHIPMENTS (Last Updated: 1 day ago) - - Surface Mount SOT-23-6 Thin, TSOT-23-6 YES 6 - SILICON 1.5A 2 12.5 ns -55°C~150°C TJ Tape & Reel (TR) 2000 - e3 yes Obsolete 1 (Unlimited) 6 - EAR99 - Tin (Sn) - - 600mW - GULL WING 260 - - unknown - 40 - 6 - - - Not Qualified - - - - - - Dual ENHANCEMENT MODE 1.1W - - - - - 2 P-Channel (Dual) SWITCHING - 160m Ω @ 2.1A, 10V - 3V @ 250μA - 281pF @ 15V 7.1nC @ 10V 9.2ns - 30V - 9.2 ns - -2.1A - 20V - - 1.5A - -30V 10A - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - - - - - - - RoHS Compliant Lead Free
                                        NTGD4161PT1G
                                        NTGD4161PT1G

                                        ON Semiconductor
                                        RoHS :
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                                        1 : -
                                        STMicroelectronics STL66DN3LLH5
                                        Mfr. Тип
                                        STL66DN3LLH5
                                        Anlielectronics Тип

                                        		STMicroelectronics
                                        MOSFET 2N-CH 30V 78.5A PWRFLAT56
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 14 Weeks ACTIVE (Last Updated: 8 months ago) - Surface Mount Surface Mount 8-PowerVDFN - 8 - - - 2 26 ns -55°C~175°C TJ Cut Tape (CT) - Automotive, AEC-Q101, STripFET™ V e3 - Active 1 (Unlimited) - - EAR99 - Matte Tin (Sn) - annealed - - 72W - - - - - - - - STL66 - - - - - - - - - - - - - 72W - 8.8 ns - - - 2 N-Channel (Dual) - - 6.5m Ω @ 10A, 10V - 3V @ 250μA - 1500pF @ 25V 12nC @ 4.5V 18ns - 30V - 4 ns - 78.5A - 22V - - - - - - - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - - - - - No - ROHS3 Compliant Lead Free
                                          STL66DN3LLH5
                                          STL66DN3LLH5

                                          STMicroelectronics
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

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