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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Transistor Element Material Manufacturer Package Identifier Current - Continuous Drain (Id) @ 25℃ Number of Elements Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Resistance Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Qualification Status Configuration Number of Channels Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max FET Type Transistor Application Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Halogen Free Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Continuous Drain Current (ID) Threshold Voltage Gate to Source Voltage (Vgs) Max Dual Supply Voltage Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) Dual Supply Voltage Input Capacitance DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology Max Junction Temperature (Tj) FET Feature Drain to Source Resistance Rds On Max Nominal Vgs Feedback Cap-Max (Crss) Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
ON Semiconductor FDMC8032L
Mfr. Тип
FDMC8032L
Anlielectronics Тип

ON Semiconductor
MOSFET 2N-CH 40V 7A 8-MLP
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 11 Weeks ACTIVE (Last Updated: 3 hours ago) - Surface Mount Surface Mount 8-PowerWDFN - 8 - 196mg SILICON - 7A 2 13 ns -55°C~150°C TJ Tape & Reel (TR) 2017 PowerTrench® e4 yes Active 1 (Unlimited) 4 - EAR99 - Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) - - - - 12W - NO LEAD NOT SPECIFIED - - NOT SPECIFIED - - S-PDSO-N4 - - 2 Dual ENHANCEMENT MODE - DRAIN 5.5 ns 1.9W 2 N-Channel (Dual) SWITCHING 20m Ω @ 7A, 10V 3V @ 250μA - 720pF @ 20V 11nC @ 10V 1.2ns - - 1.3 ns 20A - 20V - 7A - 40V 50A - - - 13 mJ METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 750μm 3mm 3mm - - ROHS3 Compliant Lead Free
    FDMC8032L
    FDMC8032L

    ON Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    ON Semiconductor FDJ1032C
    Mfr. Тип
    FDJ1032C
    Anlielectronics Тип

    		ON Semiconductor
    MOSFET N/P-CH 20V 3.2A/2.8A SC75
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - - - - Surface Mount SC75-6 FLMP - - - - - - 3.2A 2.8A - - -55°C~150°C TJ Tape & Reel (TR) - PowerTrench® - - Obsolete 1 (Unlimited) - - - - - - - - - - - - NOT SPECIFIED compliant - NOT SPECIFIED - - - - - - - - - - - 900mW N and P-Channel - 90m Ω @ 3.2A, 4.5V 1.5V @ 250μA - 200pF @ 10V 3nC @ 4.5V - 20V - - - - - - - - - - - - - - - - Logic Level Gate - - - - - - - - - RoHS Compliant -
      FDJ1032C
      FDJ1032C

      ON Semiconductor
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      ON Semiconductor FDMA3027PZ
      Mfr. Тип
      FDMA3027PZ
      Anlielectronics Тип

      		ON Semiconductor
      ON SEMICONDUCTOR - FDMA3027PZ - MOSFET, P-CH, DUAL, 30V/25V, 6MLP
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 16 Weeks ACTIVE (Last Updated: 4 days ago) - Surface Mount Surface Mount 6-VDFN Exposed Pad - 6 - 40mg SILICON - - 2 17 ns -55°C~150°C TJ Tape & Reel (TR) 2006 PowerTrench® e4 yes Active 1 (Unlimited) 6 - EAR99 - Nickel/Palladium/Gold (Ni/Pd/Au) - - - - 1.4W - NO LEAD NOT SPECIFIED - - NOT SPECIFIED - - - - - - Dual ENHANCEMENT MODE 1.4W DRAIN 5.2 ns 700mW 2 P-Channel (Dual) SWITCHING 87m Ω @ 3.3A, 10V 3V @ 250μA - 435pF @ 15V 10nC @ 10V 3ns 30V - 11 ns 3.3A -1.9V 25V - - 0.087Ohm -30V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - 80 pF 725μm 2mm 2mm - No SVHC ROHS3 Compliant Lead Free
        FDMA3027PZ
        FDMA3027PZ

        ON Semiconductor
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        ON Semiconductor VEC2415-TL-E
        Mfr. Тип
        VEC2415-TL-E
        Anlielectronics Тип

        		ON Semiconductor
        MOSFET 2N-CH 60V 3A VEC8
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 - ACTIVE, NOT REC (Last Updated: 1 week ago) - - Surface Mount 8-SMD, Flat Lead - 8 - - - - - - 41 ns 150°C TJ Tape & Reel (TR) 2013 - e6 yes Obsolete 1 (Unlimited) - - EAR99 - Tin/Bismuth (Sn/Bi) - - - - 1W - - - - - - - 8 - - - - Dual - - - 7.3 ns - 2 N-Channel (Dual) - 80m Ω @ 1.5A, 10V 2.6V @ 1mA - 505pF @ 20V 10nC @ 10V - 60V - - 3A - 20V - - - - - - - - - - - Logic Level Gate - - - - 750μm 2.9mm 2.3mm - - RoHS Compliant Lead Free
          VEC2415-TL-E
          VEC2415-TL-E

          ON Semiconductor
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          ON Semiconductor NVMFD5C466NT1G
          Mfr. Тип
          NVMFD5C466NT1G
          Anlielectronics Тип

          		ON Semiconductor
          40V 8.1 MOHM T8 S08FL DUA
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 48 Weeks ACTIVE (Last Updated: 2 days ago) - - Surface Mount 8-PowerTDFN - - - - - - 14A Ta 49A Tc - - -55°C~175°C TJ Tape & Reel (TR) - - e3 yes Active 1 (Unlimited) - - - - Tin (Sn) - - - - - - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - - - - - - 3W Ta 38W Tc 2 N-Channel (Dual) - 8.1m Ω @ 15A, 10V 3.5V @ 250μA - 650pF @ 25V 11nC @ 10V - 40V - - - - - - - - - - - - - - - - Standard - - - - - - - - - RoHS Compliant -
            NVMFD5C466NT1G
            NVMFD5C466NT1G

            ON Semiconductor
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Diodes Incorporated DMP2004DWK-7
            Mfr. Тип
            DMP2004DWK-7
            Anlielectronics Тип

            		Diodes Incorporated
            Dual P-Channel 20 V 900 mOhm Enhancement Mode Mosfet - SOT-363
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 15 Weeks - - Surface Mount Surface Mount 6-TSSOP, SC-88, SOT-363 - 6 - 6.010099mg SILICON - - 2 - -65°C~150°C TJ Tape & Reel (TR) 2011 - e3 yes Active 1 (Unlimited) 6 - EAR99 900mOhm Matte Tin (Sn) - - LOW THRESHOLD - 250mW - GULL WING 260 - - 40 - 6 - - - - Dual ENHANCEMENT MODE 250mW - - - 2 P-Channel (Dual) SWITCHING 900m Ω @ 430mA, 4.5V 1V @ 250μA - 175pF @ 16V - - 20V - - 430mA - 8V - 0.43A - - - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 1mm 2.2mm 1.35mm No No SVHC ROHS3 Compliant Lead Free
              DMP2004DWK-7
              DMP2004DWK-7

              Diodes Incorporated
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Diodes Incorporated ZXMP6A18DN8TA
              Mfr. Тип
              ZXMP6A18DN8TA
              Anlielectronics Тип

              		Diodes Incorporated
              MOSFET 2P-CH 60V 3.7A 8-SOIC
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 17 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON - 3.7A 2 55 ns -55°C~150°C TJ Tape & Reel (TR) 2006 - e3 yes Active 1 (Unlimited) 8 - EAR99 55mOhm Matte Tin (Sn) - - - -60V 2.1W - GULL WING 260 - -4.6A 40 - 8 - - - 2 Dual ENHANCEMENT MODE 2.1W - 4.6 ns 1.8W 2 P-Channel (Dual) SWITCHING 55m Ω @ 3.5A, 10V 1V @ 250μA (Min) - 1580pF @ 30V 44nC @ 10V 5.8ns 60V - 23 ns -4.8A -1V 20V - 3.7A - -60V - - - - - METAL-OXIDE SEMICONDUCTOR 150°C Logic Level Gate - - - - 1.7mm 5mm 4mm No No SVHC ROHS3 Compliant Lead Free
                ZXMP6A18DN8TA
                ZXMP6A18DN8TA

                Diodes Incorporated
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                ON Semiconductor FDG6318P
                Mfr. Тип
                FDG6318P
                Anlielectronics Тип

                		ON Semiconductor
                Trans MOSFET P-CH 20V 0.5A 6-Pin SC-70 T/R
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - LAST SHIPMENTS (Last Updated: 2 days ago) Tin Surface Mount Surface Mount 6-TSSOP, SC-88, SOT-363 - 6 - 28mg SILICON - - 2 6 ns -55°C~150°C TJ Tape & Reel (TR) 2003 - e3 yes Obsolete 1 (Unlimited) 6 - EAR99 780MOhm - - - - -20V 300mW - GULL WING - - -500mA - - - - - - - Dual ENHANCEMENT MODE 300mW - 6 ns - 2 P-Channel (Dual) SWITCHING 780m Ω @ 500mA, 4.5V 1.5V @ 250μA - 83pF @ 10V 1.2nC @ 4.5V 12ns 20V - 12 ns 500mA - 12V - 0.5A - -20V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 1mm 2mm 1.25mm No - RoHS Compliant Lead Free
                  FDG6318P
                  FDG6318P

                  ON Semiconductor
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Infineon Technologies IRF7507PBF
                  Mfr. Тип
                  IRF7507PBF
                  Anlielectronics Тип

                  		Infineon Technologies
                  MOSFET N/P-CH DUAL 20V MICRO-8
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 - - - Surface Mount Surface Mount 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) - 8 - - - - 2.4A 1.7A 2 - - Tube 1998 HEXFET® - - Discontinued 1 (Unlimited) 8 - EAR99 - - 150°C -55°C HIGH RELIABILITY - 1.25W - GULL WING - - - - IRF7507PBF - - - - - Dual ENHANCEMENT MODE 1.25W - - - N and P-Channel SWITCHING 140m Ω @ 1.7A, 4.5V 700mV @ 250μA (Min) - 260pF @ 15V 8nC @ 4.5V - 20V N-CHANNEL AND P-CHANNEL - 2.4A - 12V - 1.3A 0.14Ohm - 19A - - 20V - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 700 mV - 910μm 3.05mm 3.05mm No No SVHC ROHS3 Compliant -
                    IRF7507PBF
                    IRF7507PBF

                    Infineon Technologies
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Diodes Incorporated DMHC4035LSD-13
                    Mfr. Тип
                    DMHC4035LSD-13
                    Anlielectronics Тип

                    		Diodes Incorporated
                    MOSFET 2N/2P-CH 40V 8-SOIC
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 23 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg - - 4.5A 3.7A - 36.3 ns -55°C~150°C TJ Tape & Reel (TR) 2013 - e3 - Active 1 (Unlimited) - - EAR99 - Matte Tin (Sn) - - - - 1.5W - - - - - - - - - - - 2 - - - - 3.6 ns - 2 N and 2 P-Channel (H-Bridge) - 45m Ω @ 3.9A, 10V 3V @ 250μA - 574pF @ 20V 12.5nC @ 10V 2.9ns - - 15.3 ns 3.7A - 20V - - - 40V - - - - - - - Logic Level Gate - - - - 1.5mm 4.95mm 3.95mm - - ROHS3 Compliant -
                      DMHC4035LSD-13
                      DMHC4035LSD-13

                      Diodes Incorporated
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Alpha & Omega Semiconductor Inc. AOD603A
                      Mfr. Тип
                      AOD603A
                      Anlielectronics Тип

                      		Alpha & Omega Semiconductor Inc.
                      Transistor: N/P-MOSFET; unipolar; complementary; 60/-60V; TO252-4
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 18 Weeks - - Surface Mount Surface Mount TO-252-5, DPak (4 Leads + Tab), TO-252AD - 5 - - - - 3.5A 3A - - -55°C~175°C TJ Tape & Reel (TR) 2009 - - - Active 1 (Unlimited) - - - - - - - - - 2W - - - - - - - - - - - - - - - - - - N and P-Channel, Common Drain - 60m Ω @ 12A, 10V 3V @ 250μA - 540pF @ 30V 10nC @ 10V - 60V - - 3A - - - - - - - - - - - - - Logic Level Gate - - - - - - - - - ROHS3 Compliant -
                        AOD603A
                        AOD603A

                        Alpha & Omega Semiconductor Inc.
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Diodes Incorporated 2N7002VAC-7
                        Mfr. Тип
                        2N7002VAC-7
                        Anlielectronics Тип

                        		Diodes Incorporated
                        MOSFET 2N-CH 60V 0.28A SOT-563
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 16 Weeks - Tin Surface Mount Surface Mount SOT-563, SOT-666 - 6 - 3.005049mg SILICON 2N7002VAC-7 - 2 50 ns -55°C~150°C TJ Tape & Reel (TR) 2011 - e3 yes Active 1 (Unlimited) 6 - EAR99 - - - - HIGH RELIABILITY - 150mW - FLAT 260 - - 40 - 6 - - - - Dual ENHANCEMENT MODE 150mW - 50 ns - 2 N-Channel (Dual) SWITCHING 7.5 Ω @ 50mA, 5V 2.5V @ 250μA - 50pF @ 25V - - 60V - - 280mA - 20V - - - 60V - - - - - METAL-OXIDE SEMICONDUCTOR - Standard - - - 5 pF 600μm 1.6mm 1.2mm No No SVHC ROHS3 Compliant -
                          2N7002VAC-7
                          2N7002VAC-7

                          Diodes Incorporated
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Diodes Incorporated DMN2041LSD-13
                          Mfr. Тип
                          DMN2041LSD-13
                          Anlielectronics Тип

                          		Diodes Incorporated
                          MOSFET 2N-CH 20V 7.63A 8SO
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 15 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON - - 2 22.1 ns -55°C~150°C TJ Tape & Reel (TR) 2009 - e3 yes Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - - HIGH RELIABILITY - 1.16W - GULL WING 260 - - 40 DMN2041LSD 8 - - - - - ENHANCEMENT MODE 1.16W - 4.69 ns - 2 N-Channel (Dual) SWITCHING 28m Ω @ 6A, 4.5V 1.2V @ 250μA - 550pF @ 10V 15.6nC @ 10V 13.19ns 20V - 6.43 ns 7.63A - 12V - 7.6A - - 30A - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 1.5mm 4.95mm 3.95mm No No SVHC ROHS3 Compliant -
                            DMN2041LSD-13
                            DMN2041LSD-13

                            Diodes Incorporated
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            ON Semiconductor NTLJD3119CTAG
                            Mfr. Тип
                            NTLJD3119CTAG
                            Anlielectronics Тип

                            		ON Semiconductor
                            MOSFET N/P-CH 20V 6WDFN
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - LAST SHIPMENTS (Last Updated: 6 days ago) - - Surface Mount 6-WDFN Exposed Pad YES 6 - - SILICON - 2.6A 2.3A 2 13.7 ns -55°C~150°C TJ Tape & Reel (TR) 2007 µCool™ e3 yes Obsolete 1 (Unlimited) 6 SMD/SMT EAR99 - Tin (Sn) - - - - 710mW - - - - - - NTLJD3119C 6 - - - - Dual ENHANCEMENT MODE 710mW - - - N and P-Channel - 65m Ω @ 3.8A, 4.5V 1V @ 250μA - 271pF @ 10V 3.7nC @ 4.5V 13.2ns - N-CHANNEL AND P-CHANNEL 13.2 ns 4.6A 700mV 8V - 3.8A - -20V 18A 20V - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 700 mV - - - - No No SVHC RoHS Compliant Lead Free
                              NTLJD3119CTAG
                              NTLJD3119CTAG

                              ON Semiconductor
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Infineon Technologies BSG0810NDIATMA1
                              Mfr. Тип
                              BSG0810NDIATMA1
                              Anlielectronics Тип

                              		Infineon Technologies
                              Trans MOSFET N-CH 25V 50A 8-Pin TISON T/R
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 26 Weeks - - Surface Mount Surface Mount 8-PowerTDFN - 8 - - SILICON - 19A 39A 2 - -55°C~155°C TJ Tape & Reel (TR) 2013 OptiMOS™ e3 yes Active 1 (Unlimited) 7 - - - Tin (Sn) - - - - 2.5W - NO LEAD NOT SPECIFIED not_compliant - NOT SPECIFIED - - R-PDSO-N7 - SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - SOURCE - 2.5W 2 N-Channel (Dual) Asymmetrical - 3m Ω @ 20A, 10V 2V @ 250μA Halogen Free 1040pF @ 12V 8.4nC @ 4.5V - - - - 39A - 16V 25V 19A 0.004Ohm - 160A - - - 30 mJ METAL-OXIDE SEMICONDUCTOR - Logic Level Gate, 4.5V Drive - - - - - - - - - ROHS3 Compliant Contains Lead
                                BSG0810NDIATMA1
                                BSG0810NDIATMA1

                                Infineon Technologies
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                ROHM Semiconductor QH8MA3TCR
                                Mfr. Тип
                                QH8MA3TCR
                                Anlielectronics Тип

                                		ROHM Semiconductor
                                MOSFET N/P-CH 30V TSMT8
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 20 Weeks - - Surface Mount Surface Mount 8-SMD, Flat Lead - - - - SILICON - 7A 5.5A 2 - 150°C TJ Cut Tape (CT) 2015 - - - Active 1 (Unlimited) 8 - EAR99 - - - - - - 1.5W DUAL - NOT SPECIFIED not_compliant - NOT SPECIFIED - - R-PDSO-F8 - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - - N and P-Channel SWITCHING 29m Ω @ 7A, 10V 2.5V @ 1mA - 300pF @ 15V 7.2nC @ 10V - 30V N-CHANNEL AND P-CHANNEL - 5.5A - - - - 0.029Ohm - 18A - - 30V 1.8 mJ METAL-OXIDE SEMICONDUCTOR - Standard - - - - - - - - - ROHS3 Compliant -
                                  QH8MA3TCR
                                  QH8MA3TCR

                                  ROHM Semiconductor
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Infineon Technologies IRF5852TRPBF
                                  Mfr. Тип
                                  IRF5852TRPBF
                                  Anlielectronics Тип

                                  		Infineon Technologies
                                  MOSFET 2N-CH 20V 2.7A 6-TSOP
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - - - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - 6 6-TSOP - - - 2.7A 2 15 ns -55°C~150°C TJ Tape & Reel (TR) 2010 HEXFET® - - Obsolete 2 (1 Year) - SMD/SMT - - - 150°C -55°C - - 960mW - - - - - - IRF5852PBF - - - - - Dual - 960mW - 6.6 ns 960mW 2 N-Channel (Dual) - 90mOhm @ 2.7A, 4.5V 1.25V @ 250μA - 400pF @ 15V 6nC @ 4.5V 1.2ns 20V - 2.4 ns 2.7A 1.25V 12V - - - 20V - 20V 400pF - - - - Logic Level Gate 90mOhm 90 mΩ 1.25 V - 900μm 3mm 1.5mm No No SVHC RoHS Compliant Lead Free
                                    IRF5852TRPBF
                                    IRF5852TRPBF

                                    Infineon Technologies
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Nexperia USA Inc. NX3008CBKV,115
                                    Mfr. Тип
                                    NX3008CBKV,115
                                    Anlielectronics Тип

                                    		Nexperia USA Inc.
                                    MOSFET N/P-CH 30V SOT666
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 4 Weeks - - - Surface Mount SOT-563, SOT-666 YES - - - SILICON - 400mA 220mA 2 - -55°C~150°C TJ Tape & Reel (TR) 2011 Automotive, AEC-Q101, TrenchMOS™ e3 - Active 1 (Unlimited) 6 - - - Tin (Sn) - - LOW THRESHOLD - - DUAL FLAT NOT SPECIFIED - - NOT SPECIFIED - 6 R-PDSO-F6 - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - 500mW N and P-Channel SWITCHING 1.4 Ω @ 350mA, 4.5V 1.1V @ 250μA - 50pF @ 15V 0.68nC @ 4.5V - 30V N-CHANNEL AND P-CHANNEL - - - - - 0.4A - - - - - 30V - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - - - ROHS3 Compliant -
                                      NX3008CBKV,115
                                      NX3008CBKV,115

                                      Nexperia USA Inc.
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      Microchip Technology TC6215TG-G
                                      Mfr. Тип
                                      TC6215TG-G
                                      Anlielectronics Тип

                                      		Microchip Technology
                                      N & P-CHANNEL ENHANCEMENT-MODE DUAL MOSFET8 SOIC 3.90mm(.150in) T/R
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 6 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 84.99187mg SILICON - - 2 17.2 ns -55°C~150°C TJ Tape & Reel (TR) 2008 - e3 - Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - annealed - - - - - - GULL WING 260 - - 40 TC621 - - Not Qualified - 2 Dual ENHANCEMENT MODE - - 2.5 ns - N and P-Channel SWITCHING 4 Ω @ 2A, 10V 2V @ 1mA - 120pF @ 25V - 2.3ns 150V N-CHANNEL AND P-CHANNEL 11.3 ns 36A - 20V - - 5Ohm -150V - - - - - METAL-OXIDE SEMICONDUCTOR - Standard - - - - 1.65mm 4.9mm 3.8mm - - ROHS3 Compliant -
                                        TC6215TG-G
                                        TC6215TG-G

                                        Microchip Technology
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        Diodes Incorporated DMG6968UTS-13
                                        Mfr. Тип
                                        DMG6968UTS-13
                                        Anlielectronics Тип

                                        		Diodes Incorporated
                                        MOSFET 2N-CH 20V 5.2A 8TSSOP
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 16 Weeks - - Surface Mount Surface Mount 8-TSSOP (0.173, 4.40mm Width) - 8 - 157.991892mg SILICON - - 2 562 ns -55°C~150°C TJ Tape & Reel (TR) 2012 - e3 yes Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - - HIGH RELIABILITY - 1W - GULL WING 260 - - 40 - 8 - - - 2 Dual ENHANCEMENT MODE - - 53 ns - 2 N-Channel (Dual) Common Drain SWITCHING 23m Ω @ 6.5A, 4.5V 950mV @ 250μA - 143pF @ 10V 8.8nC @ 4.5V 78ns 20V - 234 ns 5.2A - 12V - - - - - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - No No SVHC ROHS3 Compliant -
                                          DMG6968UTS-13
                                          DMG6968UTS-13

                                          Diodes Incorporated
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - FETs, MOSFETs - Arrays definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - Arrays Product Listing: FDMC8032L,FDJ1032C,FDMA3027PZ,VEC2415-TL-E,NVMFD5C466NT1G.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - FETs, MOSFETs - Arrays has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.