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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Transistor Element Material Manufacturer Package Identifier Current - Continuous Drain (Id) @ 25℃ Number of Elements Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Resistance Terminal Finish Max Operating Temperature Min Operating Temperature HTS Code Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Number of Functions Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Qualification Status Supply Voltage-Max (Vsup) Configuration Number of Channels Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max FET Type Transistor Application Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Halogen Free Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Continuous Drain Current (ID) Threshold Voltage Gate to Source Voltage (Vgs) Max Dual Supply Voltage Interface IC Type Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) Dual Supply Voltage Input Capacitance DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology Power Dissipation-Max (Abs) Recovery Time FET Feature Drain to Source Resistance Rds On Max Nominal Vgs Output Current Flow Direction Supply Voltage1-Min Supply Voltage1-Max Height Length Width Thickness Radiation Hardening REACH SVHC RoHS Status Lead Free
ROHM Semiconductor SH8M24TB1
Mfr. Тип
SH8M24TB1
Anlielectronics Тип

ROHM Semiconductor
MOSFET N/P-CH 45V 4.5A/3.5A SOP8
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 52 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - - - 4.5A 3.5A - - 150°C TJ Tape & Reel (TR) 2009 - - - Not For New Designs 1 (Unlimited) - - - - - - - - - 2W - - - - - - - *M24 - - - - - - - - - 2W - - - N and P-Channel - 46m Ω @ 4.5A, 10V 2.5V @ 1mA - 550pF @ 10V 9.6nC @ 5V - - - - 3.5A - - - - - - 45V - - - - - - - - Standard - - - - - - - - - - - - ROHS3 Compliant -
    SH8M24TB1
    SH8M24TB1

    ROHM Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    ON Semiconductor FDMA1024NZ
    Mfr. Тип
    FDMA1024NZ
    Anlielectronics Тип

    		ON Semiconductor
    Trans MOSFET N-CH 20V 5A 6-Pin MicroFET T/R
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 16 Weeks ACTIVE (Last Updated: 3 days ago) Gold Surface Mount Surface Mount 6-VDFN Exposed Pad - 6 - 40mg SILICON - - 2 18 ns -55°C~150°C TJ Tape & Reel (TR) 2007 PowerTrench® e4 yes Active 1 (Unlimited) 6 - EAR99 54MOhm - - - - - 700mW - NO LEAD NOT SPECIFIED - - - NOT SPECIFIED - - - - Not Qualified - - - Dual ENHANCEMENT MODE 1.4W DRAIN 5.3 ns - 2 N-Channel (Dual) SWITCHING 54m Ω @ 5A, 4.5V 1V @ 250μA - 500pF @ 10V 7.3nC @ 4.5V 2.2ns 20V - 2.2 ns 5A 700mV 8V - - 5A - 20V - - - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - 700 mV - - - 750μm 2mm 2mm - - No SVHC ROHS3 Compliant Lead Free
      FDMA1024NZ
      FDMA1024NZ

      ON Semiconductor
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Nexperia USA Inc. NX3008NBKV,115
      Mfr. Тип
      NX3008NBKV,115
      Anlielectronics Тип

      		Nexperia USA Inc.
      NEXPERIA - NX3008NBKV,115 - MOSFET, NN-KANAL, 30V, 400MA, SOT666
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 4 Weeks - - - Surface Mount SOT-563, SOT-666 YES - - - SILICON - 400mA 2 - -55°C~150°C TJ Tape & Reel (TR) 2011 Automotive, AEC-Q101, TrenchMOS™ e3 - Active 1 (Unlimited) 6 - - - Tin (Sn) - - - - - - FLAT - - - - - - 6 AEC-Q101; IEC-60134 R-PDSO-F6 - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - 500mW 2 N-Channel (Dual) SWITCHING 1.4 Ω @ 350mA, 4.5V 1.1V @ 250μA - 50pF @ 15V 0.68nC @ 4.5V - 30V - - - - - - - 0.4A - - - - - 30V - METAL-OXIDE SEMICONDUCTOR 0.39W - Logic Level Gate - - - - - - - - - - - - ROHS3 Compliant -
        NX3008NBKV,115
        NX3008NBKV,115

        Nexperia USA Inc.
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        STMicroelectronics STL8DN6LF6AG
        Mfr. Тип
        STL8DN6LF6AG
        Anlielectronics Тип

        		STMicroelectronics
        MOSFET N-CH 60V 32A POWERFLAT
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 20 Weeks ACTIVE (Last Updated: 8 months ago) - Surface Mount Surface Mount 8-PowerVDFN - 8 - - - - 32A Tc - - -55°C~175°C TJ Tape & Reel (TR) - Automotive, AEC-Q101, STripFET™ - - Active 1 (Unlimited) - - EAR99 - - - - - - 55W - - NOT SPECIFIED - - - NOT SPECIFIED STL8 - - - - - - - - - - - - - 2 N-Channel (Dual) - 27m Ω @ 9.6A, 10V 2.5V @ 250μA - - - - 60V - - 32A - - - - - - - - - 1.34nF - - - - - - - - - - - - - - - - - - ROHS3 Compliant -
          STL8DN6LF6AG
          STL8DN6LF6AG

          STMicroelectronics
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Diodes Incorporated DMN2028UFU-7
          Mfr. Тип
          DMN2028UFU-7
          Anlielectronics Тип

          		Diodes Incorporated
          MOSFET 2N-CH 20V 7.5A UDFN2030-6
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 16 Weeks - - Surface Mount Surface Mount 6-UFDFN Exposed Pad - - - - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2015 - - - Active 1 (Unlimited) - - EAR99 - - - - - - 900mW - - NOT SPECIFIED - - - NOT SPECIFIED - - - - - - - - - - - - - 900mW 2 N-Channel (Dual) Common Drain - 20.2m Ω @ 4.5A, 4.5V 1V @ 250μA - 887pF @ 10V 18.4nC @ 8V - 20V - - 7.5A - - - - - - - - - - - - - - - Standard - - - - - - - - - - - - ROHS3 Compliant -
            DMN2028UFU-7
            DMN2028UFU-7

            Diodes Incorporated
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Infineon Technologies IRF7905PBF
            Mfr. Тип
            IRF7905PBF
            Anlielectronics Тип

            		Infineon Technologies
            MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 - - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 8-SO - - - 7.8A 8.9A 2 8.1 ns -55°C~150°C TJ Tube 2004 HEXFET® - - Obsolete 1 (Unlimited) - - - 21.8MOhm - 150°C -55°C - 30V 2W - - - - - 7.8A - IRF7905PBF - - - - - - - Dual - 2W - - 2W 2 N-Channel (Dual) - 21.8mOhm @ 7.8A, 10V 2.25V @ 25μA - 600pF @ 15V 6.9nC @ 4.5V 9.3ns 30V - 3.4 ns 8.9A 1.8V 20V - - - - 30V - - 600pF - - - - 15 ns Logic Level Gate 21.3mOhm 21.8 mΩ 1.8 V - - - 1.4986mm 4.9784mm 3.9878mm - No No SVHC RoHS Compliant Lead Free
              IRF7905PBF
              IRF7905PBF

              Infineon Technologies
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Diodes Incorporated DMN2008LFU-7
              Mfr. Тип
              DMN2008LFU-7
              Anlielectronics Тип

              		Diodes Incorporated
              MOSFET 2N-CHA 20V 14.5A DFN2030
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 17 Weeks - - Surface Mount Surface Mount 6-UFDFN Exposed Pad - - - - SILICON - - 2 - -55°C~150°C TJ Tape & Reel (TR) 2013 - e4 - Active 1 (Unlimited) 6 - EAR99 - Nickel/Palladium/Gold (Ni/Pd/Au) - - - - 1W - NO LEAD NOT SPECIFIED - - - NOT SPECIFIED - - - R-PDSO-N6 - - COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - 1W 2 N-Channel (Dual) Common Drain SWITCHING 5.4m Ω @ 5.5A, 4.5V 1.5V @ 250A - 1418pF @ 10V 42.3nC @ 10V - 20V - - 14.5A - - - - - 0.0096Ohm - - - - 20V - METAL-OXIDE SEMICONDUCTOR - - Standard - - - - - - - - - - - - ROHS3 Compliant -
                DMN2008LFU-7
                DMN2008LFU-7

                Diodes Incorporated
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Diodes Incorporated ZXMN3A06DN8TA
                Mfr. Тип
                ZXMN3A06DN8TA
                Anlielectronics Тип

                		Diodes Incorporated
                MOSFET 2N-CH 30V 4.9A 8-SOIC
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 17 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON - 4.9A 2 21.6 ns -55°C~150°C TJ Tape & Reel (TR) 2006 - e3 yes Active 1 (Unlimited) 8 SMD/SMT EAR99 35mOhm Matte Tin (Sn) - - - 30V 2.1W - GULL WING 260 - - 4.8A 40 - 8 - - - - - 2 Dual ENHANCEMENT MODE 2.1W - 3 ns 1.8W 2 N-Channel (Dual) SWITCHING 35m Ω @ 9A, 10V 1V @ 250μA (Min) - 796pF @ 25V 17.5nC @ 10V 6.4ns - - 9.4 ns 6.2A 1V 20V - - 4.9A - 30V - 30V - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - 1 V - - - 1.5mm 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
                  ZXMN3A06DN8TA
                  ZXMN3A06DN8TA

                  Diodes Incorporated
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Infineon Technologies IPG20N06S2L50AATMA1
                  Mfr. Тип
                  IPG20N06S2L50AATMA1
                  Anlielectronics Тип

                  		Infineon Technologies
                  MOSFET N-Ch 55V 20A TDSON-8
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 10 Weeks - - Surface Mount Surface Mount, Wettable Flank 8-PowerVDFN - 8 PG-TDSON-8-10 - - - 20A - 15 ns -55°C~175°C TJ Tape & Reel (TR) 1997 Automotive, AEC-Q101, OptiMOS™ - - Active 1 (Unlimited) - - - - - 175°C -55°C - - 51W - - - - - - - - - - - - - - - Dual - - - - 51W 2 N-Channel (Dual) - 50mOhm @ 15A, 10V 2V @ 19μA Halogen Free 560pF @ 25V 17nC @ 10V 3ns 55V - 10 ns 20A - 20V 55V - - - 55V - - 560pF - - - - - Logic Level Gate 50mOhm 50 mΩ - - - - - - - - - - ROHS3 Compliant Contains Lead
                    IPG20N06S2L50AATMA1
                    IPG20N06S2L50AATMA1

                    Infineon Technologies
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    ON Semiconductor NTLGD3502NT2G
                    Mfr. Тип
                    NTLGD3502NT2G
                    Anlielectronics Тип

                    		ON Semiconductor
                    MOSFET 2N-CH 20V 4.3A/3.6A 6DFN
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 4 Weeks LIFETIME (Last Updated: 1 day ago) - - Surface Mount 6-VDFN Exposed Pad YES 6 - - SILICON - 4.3A 3.6A 2 8.6 ns -55°C~150°C TJ Tape & Reel (TR) 2007 - e3 yes Active 1 (Unlimited) 6 - - 60MOhm Tin (Sn) - - 8541.29.00.95 - 1.74W - - 260 - - - 40 NTLGD3502N 6 - - - - - - Dual ENHANCEMENT MODE 1.74W DRAIN 7 ns - 2 N-Channel (Dual) - 60m Ω @ 4.3A, 4.5V 2V @ 250μA - 480pF @ 10V 4nC @ 4.5V 17.5ns - - 17.5 ns 5.8A - 20V - - 4.3A - 20V 17.2A - - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - - - - - - - - - No - ROHS3 Compliant Lead Free
                      NTLGD3502NT2G
                      NTLGD3502NT2G

                      ON Semiconductor
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Diodes Incorporated DMTH6016LSD-13
                      Mfr. Тип
                      DMTH6016LSD-13
                      Anlielectronics Тип

                      		Diodes Incorporated
                      DIODES INC. - DMTH6016LSD-13 - Dual MOSFET, Dual N Channel, 7.6 A, 60 V, 0.015 ohm, 10 V, 2.5 V
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 20 Weeks - - - Surface Mount 8-SOIC (0.154, 3.90mm Width) - - - - - - 7.6A Ta - - -55°C~150°C TJ Tape & Reel (TR) - Automotive, AEC-Q101 e3 - Active - - - EAR99 - Matte Tin (Sn) - - - - - - - NOT SPECIFIED - - - NOT SPECIFIED - - - - - - - - - - - - - - 2 N-Channel (Dual) - 19.5m Ω @ 10A, 10V 2.5V @ 250μA - 864pF @ 30V 17nC @ 10V - - - - - - - - - - - - - - - - - - - - Standard - - - - - - - - - - - - ROHS3 Compliant -
                        DMTH6016LSD-13
                        DMTH6016LSD-13

                        Diodes Incorporated
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        ON Semiconductor NTUD3174NZT5G
                        Mfr. Тип
                        NTUD3174NZT5G
                        Anlielectronics Тип

                        		ON Semiconductor
                        NFET SOT963 20V 280MA TR
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 8 Weeks - - - Surface Mount SOT-963 - - - - - - 220mA Ta - - -55°C~150°C TJ Tape & Reel (TR) 2011 - - - Active 1 (Unlimited) - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 125mW Ta 2 N-Channel (Dual) - 1.5 Ω @ 100mA, 4.5V 1V @ 100μA - 12.5pF @ 15V - - 20V - - - - - - - - - - - - - - - - - - Standard - - - - - - - - - - - - ROHS3 Compliant -
                          NTUD3174NZT5G
                          NTUD3174NZT5G

                          ON Semiconductor
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          ROHM Semiconductor SH8M41TB1
                          Mfr. Тип
                          SH8M41TB1
                          Anlielectronics Тип

                          		ROHM Semiconductor
                          MOSFET N/P-CH 80V 3.4A/2.6A SOP8
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 - - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - - - 3.4A 2.6A - - 150°C TJ Tape & Reel (TR) 2010 - - - Not For New Designs 1 (Unlimited) - - - - - - - - - 2W - - - - - - - *M41 - - - - - - - - - 2W - - - N and P-Channel - 130m Ω @ 3.4A, 10V 2.5V @ 1mA - 600pF @ 10V 9.2nC @ 5V - - - - 2.6A - - - - - - 80V - - - - - - - - Logic Level Gate - - - - - - - - - - - - ROHS3 Compliant -
                            SH8M41TB1
                            SH8M41TB1

                            ROHM Semiconductor
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            ROHM Semiconductor VT6M1T2CR
                            Mfr. Тип
                            VT6M1T2CR
                            Anlielectronics Тип

                            		ROHM Semiconductor
                            MOSFET N/P-CH 20V 0.1A VMT6
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 16 Weeks - - Surface Mount Surface Mount 6-SMD, Flat Leads - - - - SILICON - - 2 - 150°C TJ Cut Tape (CT) 1997 - e1 - Active 1 (Unlimited) 6 - EAR99 - TIN SILVER COPPER - - - - 120mW DUAL - 260 - - - 10 - 6 - R-PDSO-F6 - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR - - ENHANCEMENT MODE - - - 120mW N and P-Channel SWITCHING 3.5 Ω @ 100mA, 4.5V 1V @ 100μA - 7.1pF @ 10V - - 20V N-CHANNEL AND P-CHANNEL - 100mA - - - - 0.1A 4.2Ohm - - - - 20V - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate, 1.2V Drive - - - - - - - - - - - - ROHS3 Compliant Lead Free
                              VT6M1T2CR
                              VT6M1T2CR

                              ROHM Semiconductor
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Infineon Technologies FF11MR12W1M1B11BOMA1
                              Mfr. Тип
                              FF11MR12W1M1B11BOMA1
                              Anlielectronics Тип

                              		Infineon Technologies
                              MOSFET 2 N-CH 1200V 100A MODULE
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 16 Weeks - - - Chassis Mount Module NO - - - - AG-EASY1BM-2 - 2 64.3 ns -40°C~150°C TJ Tray 2008 CoolSiC™+ - - Active Not Applicable 18 - EAR99 - - - - - - - UPPER UNSPECIFIED NOT SPECIFIED - - - NOT SPECIFIED - - - R-XUFM-X18 - - - 2 - ENHANCEMENT MODE 20mW ISOLATED 25.1 ns - 2 N-Channel (Dual) SWITCHING 11m Ω @ 100A, 15V 5.55V @ 40mA - 7950pF @ 800V 250nC @ 15V - 1200V 1.2kV - - 100A - 20V - - - - - - - - - - METAL-OXIDE SEMICONDUCTOR - - Silicon Carbide (SiC) - - - - - - 12.35mm - - - - - ROHS3 Compliant -
                                FF11MR12W1M1B11BOMA1
                                FF11MR12W1M1B11BOMA1

                                Infineon Technologies
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Infineon Technologies IRF7750TRPBF
                                Mfr. Тип
                                IRF7750TRPBF
                                Anlielectronics Тип

                                		Infineon Technologies
                                MOSFET 2P-CH 20V 4.7A 8TSSOP
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - - - Surface Mount Surface Mount 8-TSSOP (0.173, 4.40mm Width) - 8 8-TSSOP - - - 4.7A 2 180 ns -55°C~150°C TJ Tape & Reel (TR) 2009 HEXFET® - - Obsolete 1 (Unlimited) - SMD/SMT - - - 150°C -55°C - - 1W - - - - - - - IRF7750PBF - - - - - - - Dual - 1W - 15 ns 1W 2 P-Channel (Dual) - 30mOhm @ 4.7A, 4.5V 1.2V @ 250μA - 1700pF @ 15V 39nC @ 5V 54ns 20V - 210 ns 4.7A -1.2V 12V - - - - -20V - -20V 1.7nF - - - - - Logic Level Gate 55mOhm 30 mΩ -1.2 V - - - 1.0414mm 3.0988mm 4.4958mm - No No SVHC RoHS Compliant -
                                  IRF7750TRPBF
                                  IRF7750TRPBF

                                  Infineon Technologies
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  ON Semiconductor ECH8664R-TL-H
                                  Mfr. Тип
                                  ECH8664R-TL-H
                                  Anlielectronics Тип

                                  		ON Semiconductor
                                  MOSFET 2N-CH 30V 7A ECH8
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - LIFETIME (Last Updated: 2 days ago) - - Surface Mount 8-SMD, Flat Lead - 8 - - - - - - 3.3 μs 150°C TJ Tape & Reel (TR) 2008 - e6 yes Obsolete 1 (Unlimited) - - EAR99 - Tin/Bismuth (Sn/Bi) - - - - 1.4W - - - - - - - - 8 - - - - - - Dual - 1.4W - 270 ns - 2 N-Channel (Dual) - 23.5m Ω @ 3.5A, 4.5V - Halogen Free - 10nC @ 4.5V 850ns 30V - 1.7 μs 7A - 12V - - - - - - - - - - - - - Logic Level Gate - - - - - - 900μm 2.9mm 2.3mm - No - RoHS Compliant Lead Free
                                    ECH8664R-TL-H
                                    ECH8664R-TL-H

                                    ON Semiconductor
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    ROHM Semiconductor QH8MA2TCR
                                    Mfr. Тип
                                    QH8MA2TCR
                                    Anlielectronics Тип

                                    		ROHM Semiconductor
                                    MOSFET N/P-CH 30V 4.5A/3A TSMT8
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 20 Weeks - - Surface Mount Surface Mount 8-SMD, Flat Lead - - - - SILICON - 4.5A 3A 2 - 150°C TJ Cut Tape (CT) 2014 - - yes Active 1 (Unlimited) 8 - - - - - - - - 1.25W DUAL - NOT SPECIFIED - - - NOT SPECIFIED - - - R-PDSO-F8 - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - - N and P-Channel SWITCHING 35m Ω @ 4.5A, 10V 2.5V @ 1mA - 365pF @ 10V 8.4nC @ 10V - 30V N-CHANNEL AND P-CHANNEL - 3A - - - - 4.5A 0.0056Ohm - 12A - - 30V 1.5 mJ METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - - - - - - - - - - - ROHS3 Compliant -
                                      QH8MA2TCR
                                      QH8MA2TCR

                                      ROHM Semiconductor
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      Nexperia USA Inc. NX3008PBKV,115
                                      Mfr. Тип
                                      NX3008PBKV,115
                                      Anlielectronics Тип

                                      		Nexperia USA Inc.
                                      NX3008PBKV - 30 V, 220 mA dual P-channel Trench MOSFET
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 4 Weeks - - - Surface Mount SOT-563, SOT-666 YES 6 - - SILICON - - 2 65 ns -55°C~150°C TJ Tape & Reel (TR) 2011 Automotive, AEC-Q101, TrenchMOS™ e3 - Active 1 (Unlimited) 6 - - - Tin (Sn) - - - - 500mW - FLAT - - - - - - 6 - R-PDSO-G3 - - SINGLE WITH BUILT-IN DIODE - - ENHANCEMENT MODE 390mW - 19 ns - 2 P-Channel (Dual) SWITCHING 4.1 Ω @ 200mA, 4.5V 1.1V @ 250μA - 46pF @ 15V 0.72nC @ 4.5V 30ns 30V - 38 ns 220mA - 8V -30V - - - - - - - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - - - - - - - - - No - ROHS3 Compliant Lead Free
                                        NX3008PBKV,115
                                        NX3008PBKV,115

                                        Nexperia USA Inc.
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        Texas Instruments CSD88599Q5DC
                                        Mfr. Тип
                                        CSD88599Q5DC
                                        Anlielectronics Тип

                                        		Texas Instruments
                                        MOSFET 2 N-CH 60V 22-VSON-CLIP
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 8 Weeks ACTIVE (Last Updated: 2 days ago) - - Surface Mount 22-PowerTFDFN YES 22 - - - - - - - -55°C~150°C TJ Tape & Reel (TR) - NexFET™ e3 yes Active 1 (Unlimited) 22 - EAR99 - Matte Tin (Sn) - - - - - DUAL NO LEAD 260 1 not_compliant - NOT SPECIFIED CSD88599 - - - - 54V - - - - - - - 12W 2 N-Channel (Half Bridge) - 2.1m Ω @ 30A, 10V 2.5V @ 250μA - 4840pF @ 30V 27nC @ 4.5V - 60V - - - - - - HALF BRIDGE BASED PERIPHERAL DRIVER - - - - - - - - - - - Standard - - - SOURCE SINK 4.5V 16V - 6mm 5mm 850μm - - ROHS3 Compliant -
                                          CSD88599Q5DC
                                          CSD88599Q5DC

                                          Texas Instruments
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - FETs, MOSFETs - Arrays definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - Arrays Product Listing: SH8M24TB1,FDMA1024NZ,NX3008NBKV,115,STL8DN6LF6AG,DMN2028UFU-7.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - FETs, MOSFETs - Arrays has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.