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[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Weight Transistor Element Material Manufacturer Package Identifier Current - Continuous Drain (Id) @ 25℃ Number of Elements Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Resistance Terminal Finish Additional Feature Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Number of Functions Terminal Pitch Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Input Voltage-Nom Configuration Number of Channels Analog IC - Other Type Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max FET Type Transistor Application Input Voltage (Max) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Halogen Free Control Technique Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Supply Current-Max (Isup) Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Switcher Configuration Continuous Drain Current (ID) Threshold Voltage JEDEC-95 Code Gate to Source Voltage (Vgs) Max Dual Supply Voltage Switching Frequency-Max Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology Max Junction Temperature (Tj) FET Feature Height Height Seated (Max) Length Width Thickness Radiation Hardening REACH SVHC RoHS Status Lead Free
Infineon Technologies IRF7341GTRPBF
Mfr. Тип
IRF7341GTRPBF
Anlielectronics Тип

Infineon Technologies
MOSFET N-CH 55V 5.1A
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 12 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - - - SILICON - - 2 - -55°C~175°C TJ Tape & Reel (TR) 2005 HEXFET® - - Active 1 (Unlimited) 8 EAR99 - - ULTRA LOW RESISTANCE - 2.4W - GULL WING NOT SPECIFIED - - - - NOT SPECIFIED - - - R-PDSO-G8 - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - - - 2.4W 2 N-Channel (Dual) SWITCHING - 50m Ω @ 5.1A, 10V 1V @ 250μA (Min) - - 780pF @ 25V 44nC @ 10V - - 55V - - - 5.1A - MS-012AA - - - - 0.05Ohm - 42A 55V 140 mJ METAL-OXIDE SEMICONDUCTOR - Standard - - - - - - - ROHS3 Compliant -
    IRF7341GTRPBF
    IRF7341GTRPBF

    Infineon Technologies
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    ROHM Semiconductor EM6K31T2R
    Mfr. Тип
    EM6K31T2R
    Anlielectronics Тип

    		ROHM Semiconductor
    MOSFET 2N-CH 60V 0.25A EMT6
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 16 Weeks - - Surface Mount Surface Mount SOT-563, SOT-666 - 6 - SILICON - - 2 18 ns 150°C TJ Tape & Reel (TR) 2010 - e2 yes Active 1 (Unlimited) 6 EAR99 - Tin/Copper (Sn/Cu) - - 120mW - FLAT 260 - - - - 10 *K31 6 - - - - 2 - - ENHANCEMENT MODE - - 3.5 ns 150mW 2 N-Channel (Dual) SWITCHING - 2.4 Ω @ 250mA, 10V 2.3V @ 1mA - - 15pF @ 25V - 5ns - 60V - 28 ns - 250mA - - 20V - - - - 60V - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - No - ROHS3 Compliant Lead Free
      EM6K31T2R
      EM6K31T2R

      ROHM Semiconductor
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      STMicroelectronics STL36DN6F7
      Mfr. Тип
      STL36DN6F7
      Anlielectronics Тип

      		STMicroelectronics
      MOSFET 2 N-CH 60V 33A POWERFLAT
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 38 Weeks ACTIVE (Last Updated: 8 months ago) - - Surface Mount 8-PowerVDFN YES - - SILICON PowerFLATTM_8256945_DI_typeC 33A Tc 2 12.1 ns -55°C~175°C TJ Tape & Reel (TR) - STripFET™ e3 - Active 1 (Unlimited) 6 - - Matte Tin (Sn) - - - - - 260 - - not_compliant - NOT SPECIFIED STL36 - - R-PDSO-F6 - - 2 - - ENHANCEMENT MODE 58W DRAIN 7.85 ns - 2 N-Channel (Dual) SWITCHING - 27m Ω @ 4.5A, 10V 4V @ 250μA - - 420pF @ 30V 8nC @ 10V - - - - - - 33A - - 20V - - 36A - 60V 144A - - METAL-OXIDE SEMICONDUCTOR 175°C Standard 1mm - - - - - - ROHS3 Compliant -
        STL36DN6F7
        STL36DN6F7

        STMicroelectronics
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        ON Semiconductor FDS6984AS
        Mfr. Тип
        FDS6984AS
        Anlielectronics Тип

        		ON Semiconductor
        Trans MOSFET N-CH 30V 8.5A/5.5A 8-Pin SOIC N T/R
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 18 Weeks ACTIVE (Last Updated: 2 days ago) Tin Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 187mg - - 5.5A 8.5A 2 22 ns -55°C~150°C TJ Tape & Reel (TR) 2005 PowerTrench®, SyncFET™ - - Active 1 (Unlimited) - - 32MOhm - - - 2W - - - - - - - - - - - - - - - - - - 2W - - 900mW 2 N-Channel (Dual) - - 31m Ω @ 5.5A, 10V 3V @ 250μA - - 420pF @ 15V 11nC @ 10V 6ns - - - 2 ns - 8.5A 1.7V - 20V - - - - 30V - - - - - Logic Level Gate 1.5mm - 5mm 3.99mm - - No SVHC ROHS3 Compliant Lead Free
          FDS6984AS
          FDS6984AS

          ON Semiconductor
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Diodes Incorporated DMN2019UTS-13
          Mfr. Тип
          DMN2019UTS-13
          Anlielectronics Тип

          		Diodes Incorporated
          MOSFET 2N-CH 20V 5.4A TSSOP-8
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 16 Weeks - - Surface Mount Surface Mount 8-TSSOP (0.173, 4.40mm Width) - 8 157.991892mg - - - - 562 ns -55°C~150°C TJ Tape & Reel (TR) 2009 - e3 - Active 1 (Unlimited) - EAR99 18.5mOhm Matte Tin (Sn) - - 780mW - - - - - - - - DMN2019 - - - - - 2 - Dual - - - 53 ns - 2 N-Channel (Dual) Common Drain - - 18.5m Ω @ 7A, 10V 950mV @ 250μA - - 143pF @ 10V 8.8nC @ 4.5V 78ns - 20V - 234 ns - 5.4A - - 12V - - - - 20V - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - No SVHC ROHS3 Compliant Lead Free
            DMN2019UTS-13
            DMN2019UTS-13

            Diodes Incorporated
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Nexperia USA Inc. NX3008PBKS,115
            Mfr. Тип
            NX3008PBKS,115
            Anlielectronics Тип

            		Nexperia USA Inc.
            In a Pack of 75, Dual P-Channel MOSFET, 200 mA, 30 V, 6-Pin SOT-363 Nexperia NX3008PBKS, 115
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 4 Weeks - Tin - Surface Mount 6-TSSOP, SC-88, SOT-363 - 6 - - - - 2 65 ns -55°C~150°C TJ Tape & Reel (TR) 2011 Automotive, AEC-Q101, TrenchMOS™ e3 - Active 1 (Unlimited) - - - - - - 445mW - - - - - - - - - 6 - - - - - - Dual - 445mW - 19 ns - 2 P-Channel (Dual) - - 4.1 Ω @ 200mA, 4.5V 1.1V @ 250μA - - 46pF @ 15V 0.75nC @ 4.5V 30ns - 30V - 38 ns - 200mA - - 8V -30V - - - -30V - - - - - Logic Level Gate - - - - - No - ROHS3 Compliant Lead Free
              NX3008PBKS,115
              NX3008PBKS,115

              Nexperia USA Inc.
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Diodes Incorporated ZXMD63C03XTA
              Mfr. Тип
              ZXMD63C03XTA
              Anlielectronics Тип

              		Diodes Incorporated
              MOSFET N/P-CH 30V 8-MSOP
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 - - - Surface Mount Surface Mount 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) - 8 139.989945mg SILICON - - 2 13.1 ns -55°C~150°C TJ Tape & Reel (TR) 2007 - e3 yes Obsolete 1 (Unlimited) 8 EAR99 185mOhm Matte Tin (Sn) LOW THRESHOLD - 1.04W DUAL GULL WING 260 - - - - 40 - 8 - - - - - - - ENHANCEMENT MODE 1.25W - 2.6 ns - N and P-Channel SWITCHING - 135m Ω @ 1.7A, 10V 1V @ 250μA (Min) - - 290pF @ 25V 8nC @ 10V 4.8ns - - N-CHANNEL AND P-CHANNEL 4.8 ns - -2A - - 20V - - - - 30V - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate 950μm - 3.1mm 3.1mm - No No SVHC ROHS3 Compliant Lead Free
                ZXMD63C03XTA
                ZXMD63C03XTA

                Diodes Incorporated
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Diodes Incorporated ZXMN6A09DN8TA
                Mfr. Тип
                ZXMN6A09DN8TA
                Anlielectronics Тип

                		Diodes Incorporated
                MOSFET 2N-CH 60V 4.3A 8-SOIC
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 17 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 73.992255mg SILICON - 4.3A 2 25.3 ns -55°C~150°C TJ Tape & Reel (TR) 2007 - e3 yes Active 1 (Unlimited) 8 EAR99 40mOhm Matte Tin (Sn) - 60V 2.1W - GULL WING 260 - - - 4.4A 40 - 8 - - - - 2 - - ENHANCEMENT MODE 2.1W - 4.9 ns 1.25W 2 N-Channel (Dual) SWITCHING - 40m Ω @ 8.2A, 10V 3V @ 250μA - - 1407pF @ 40V 24.2nC @ 5V 5ns - - - 4.6 ns - 5.6A - - 20V - - 4.3A - 60V - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate 1.5mm - 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
                  ZXMN6A09DN8TA
                  ZXMN6A09DN8TA

                  Diodes Incorporated
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  ON Semiconductor FDY2000PZ
                  Mfr. Тип
                  FDY2000PZ
                  Anlielectronics Тип

                  		ON Semiconductor
                  MOSFET -20V Dual P-Channel Spec PwrTrch MOSFET
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 10 Weeks ACTIVE (Last Updated: 22 hours ago) - Surface Mount Surface Mount SOT-563, SOT-666 - 6 32mg SILICON - - 2 8 ns -55°C~150°C TJ Tape & Reel (TR) 2006 PowerTrench® e3 yes Active 1 (Unlimited) 6 EAR99 - Tin (Sn) - - 625mW - FLAT - - - - - - - - - - - - - - Dual ENHANCEMENT MODE 630mW - 6 ns 446mW 2 P-Channel (Dual) - - 1.2 Ω @ 350mA, 4.5V 1.5V @ 250μA - - 100pF @ 10V 1.4nC @ 4.5V 13ns - 20V - 13 ns - 350mA -1.03V - 8V - - 0.35A - -20V - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate 600μm - 1.7mm 1.2mm - No No SVHC ROHS3 Compliant Lead Free
                    FDY2000PZ
                    FDY2000PZ

                    ON Semiconductor
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Diodes Incorporated ZXMN3A04DN8TA
                    Mfr. Тип
                    ZXMN3A04DN8TA
                    Anlielectronics Тип

                    		Diodes Incorporated
                    MOSFET 2N-CH 30V 6.5A 8-SOIC
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 19 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 73.992255mg - - 6.5A - 38.1 ns -55°C~150°C TJ Tape & Reel (TR) 2012 - e3 yes Active 1 (Unlimited) 8 EAR99 20mOhm Matte Tin (Sn) - 30V 2.15W - GULL WING 260 - - - 6.8A 40 - 8 - - - - 2 - - - 2.15W - 5.2 ns 1.81W 2 N-Channel (Dual) - - 20m Ω @ 12.6A, 10V 1V @ 250μA (Min) - - 1890pF @ 15V 36.8nC @ 10V 6.1ns - - - 20.2 ns - 8.5A - - 12V - - - - 30V - - - - - Logic Level Gate 1.5mm - 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
                      ZXMN3A04DN8TA
                      ZXMN3A04DN8TA

                      Diodes Incorporated
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      ON Semiconductor EFC4618R-P-TR
                      Mfr. Тип
                      EFC4618R-P-TR
                      Anlielectronics Тип

                      		ON Semiconductor
                      Trans MOSFET N-CH 4-Pin WLCSP T/R
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 - - - - Surface Mount 4-XBGA, 4-FCBGA - 4 - - - - - 1.84 μs 150°C TJ Tape & Reel (TR) 2015 - e1 yes Obsolete 1 (Unlimited) - EAR99 - Tin/Silver/Copper (Sn/Ag/Cu) - - 1.6W - - - - - - - - - 4 - - - - - - Dual - - - 200 ns - 2 N-Channel (Dual) Common Drain - - - - - - - 25.4nC @ 4.5V 815ns - - - 1.77 μs - - - - 12V - - - - - - - - - - Logic Level Gate, 2.5V Drive - - - - - No - RoHS Compliant Lead Free
                        EFC4618R-P-TR
                        EFC4618R-P-TR

                        ON Semiconductor
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Diodes Incorporated DMC3028LSDX-13
                        Mfr. Тип
                        DMC3028LSDX-13
                        Anlielectronics Тип

                        		Diodes Incorporated
                        MOSFET N/P-CH 30V 5.5A/5.8A 8SO
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 23 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 73.992255mg SILICON - 5.5A 5.8A 2 60.5 ns -55°C~150°C TJ Tape & Reel (TR) 2015 - e3 - Active 1 (Unlimited) 8 EAR99 - Matte Tin (Sn) HIGH RELIABILITY - 1.2W DUAL GULL WING 260 - - - - 30 - - AEC-Q101 - - - 2 - - ENHANCEMENT MODE - - 9.7 ns - N and P-Channel SWITCHING - 27m Ω @ 6A, 10V 3V @ 250μA - - 641pF @ 15V 13.2nC @ 10V 17.1ns - 30V N-CHANNEL AND P-CHANNEL 40.4 ns - 5.8A - - 20V - - 5.5A - - - 30V - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate 1.5mm - 4.95mm 3.95mm - No No SVHC ROHS3 Compliant -
                          DMC3028LSDX-13
                          DMC3028LSDX-13

                          Diodes Incorporated
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Renesas Electronics America HAT2038R-EL-E
                          Mfr. Тип
                          HAT2038R-EL-E
                          Anlielectronics Тип

                          		Renesas Electronics America
                          MOSFET 2N-CH 60V 5A 8SOP
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 16 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - SILICON - - 2 110 ns 150°C TJ Tape & Reel (TR) 2005 - - yes Active 1 (Unlimited) 8 EAR99 - - - 60V 2W - GULL WING 260 - - - 5A 20 - 8 - - - - - - - ENHANCEMENT MODE 3W - 11 ns - 2 N-Channel (Dual) SWITCHING - 58m Ω @ 3A, 10V 2.2V @ 1mA - - 520pF @ 10V - 40ns - - - 80 ns - 5A - - 20V - - 5A - - 40A - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - No - ROHS3 Compliant Lead Free
                            HAT2038R-EL-E
                            HAT2038R-EL-E

                            Renesas Electronics America
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            ON Semiconductor NVMFD5C674NLT1G
                            Mfr. Тип
                            NVMFD5C674NLT1G
                            Anlielectronics Тип

                            		ON Semiconductor
                            MOSFET 2N-CH 60V 42A S08FL
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 48 Weeks ACTIVE (Last Updated: 3 days ago) - - Surface Mount 8-PowerTDFN YES - - SILICON - 11A Ta 42A Tc 2 - -55°C~175°C TJ Tape & Reel (TR) 2013 Automotive, AEC-Q101 e3 yes Active 1 (Unlimited) 6 - - Tin (Sn) - - - - FLAT NOT SPECIFIED - - not_compliant - NOT SPECIFIED - - - R-PDSO-F6 - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - DRAIN - 3W Ta 37W Tc 2 N-Channel (Dual) - - 14.4m Ω @ 10A, 10V 2.2V @ 25μA - - 640pF @ 25V 4.7nC @ 4.5V - - 60V - - - - - - - - - - 0.0204Ohm - 119A 60V 61 mJ METAL-OXIDE SEMICONDUCTOR - Standard - - - - - - - ROHS3 Compliant -
                              NVMFD5C674NLT1G
                              NVMFD5C674NLT1G

                              ON Semiconductor
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Diodes Incorporated DMP56D0UV-7
                              Mfr. Тип
                              DMP56D0UV-7
                              Anlielectronics Тип

                              		Diodes Incorporated
                              MOSFET 2P-CH 50V 0.16A SOT563
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 16 Weeks - - Surface Mount Surface Mount SOT-563, SOT-666 - 6 3.005049mg SILICON - - 2 21.9 ns -55°C~150°C TJ Tape & Reel (TR) 2013 - e3 - Active 1 (Unlimited) 6 EAR99 - Matte Tin (Sn) HIGH RELIABILITY - 400mW - FLAT 260 - - - - 30 - - AEC-Q101 - - - - - Dual ENHANCEMENT MODE 400mW - 4.46 ns - 2 P-Channel (Dual) SWITCHING - 6 Ω @ 100mA, 4V 1.2V @ 250μA - - 50.54pF @ 25V 0.58nC @ 4V 6.63ns - 50V - 15 ns - 160mA - - 8V - - - 6Ohm -50V - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate 600μm - 1.7mm 1.25mm - No No SVHC ROHS3 Compliant Lead Free
                                DMP56D0UV-7
                                DMP56D0UV-7

                                Diodes Incorporated
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                ON Semiconductor EFC6602R-TR
                                Mfr. Тип
                                EFC6602R-TR
                                Anlielectronics Тип

                                		ON Semiconductor
                                Trans MOSFET N-CH 6-Pin EFCP T/R
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 6 Weeks ACTIVE, NOT REC (Last Updated: 1 week ago) - - Surface Mount 6-XFBGA, FCBGA - 6 - - - - 2 - 150°C TJ Tape & Reel (TR) 2013 - - yes Active 1 (Unlimited) - EAR99 - - - - 2W - - - - - - - - - 6 - - - - - - Dual - 2W - - - 2 N-Channel (Dual) - - - - Halogen Free - - 55nC @ 4.5V - - - - - - - - - 12V - - - - - - - - - - Logic Level Gate, 2.5V Drive - - - - - - - ROHS3 Compliant Lead Free
                                  EFC6602R-TR
                                  EFC6602R-TR

                                  ON Semiconductor
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Diodes Incorporated DMN4031SSD-13
                                  Mfr. Тип
                                  DMN4031SSD-13
                                  Anlielectronics Тип

                                  		Diodes Incorporated
                                  MOSFET 2N-CH 40V 5.2A 8SO
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 15 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 73.992255mg SILICON - - 2 19.8 ns -55°C~150°C TJ Tape & Reel (TR) 2012 - e3 yes Active 1 (Unlimited) 8 EAR99 31mOhm Matte Tin (Sn) HIGH RELIABILITY - 1.42W - GULL WING 260 - - - - 40 DMN4031 8 - - - - - - Dual ENHANCEMENT MODE 2.6W - 6.4 ns - 2 N-Channel (Dual) SWITCHING - 31m Ω @ 6A, 10V 3V @ 250μA - - 945pF @ 20V 18.6nC @ 10V 9.7ns - 40V - 3.1 ns - 5.2A - - 20V - - 7A - 40V - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate 1.5mm - 4.95mm 3.95mm - No No SVHC ROHS3 Compliant Lead Free
                                    DMN4031SSD-13
                                    DMN4031SSD-13

                                    Diodes Incorporated
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Diodes Incorporated DMTH6010LPD-13
                                    Mfr. Тип
                                    DMTH6010LPD-13
                                    Anlielectronics Тип

                                    		Diodes Incorporated
                                    MOSFET 2N-CHA 60V 13.1A POWERDI
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 23 Weeks - - Surface Mount Surface Mount 8-PowerTDFN - 8 - - - 13.1A Ta 47.6A Tc - - -55°C~175°C TJ Tape & Reel (TR) 2016 Automotive, AEC-Q101 e3 yes Active 1 (Unlimited) - EAR99 - Matte Tin (Sn) - - 2.8W - - NOT SPECIFIED - - - - NOT SPECIFIED - - - - - - - - - - - - - - 2 N-Channel (Dual) - - 11m Ω @ 20A, 10V 3V @ 250μA - - 2615pF @ 30V 40.2nC @ 10V - - 60V - - - 47.6A - - - - - - - - - - - - - Standard - - - - - - - ROHS3 Compliant -
                                      DMTH6010LPD-13
                                      DMTH6010LPD-13

                                      Diodes Incorporated
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      Texas Instruments CSD87334Q3DT
                                      Mfr. Тип
                                      CSD87334Q3DT
                                      Anlielectronics Тип

                                      		Texas Instruments
                                      MOSFET 2N-CH 30V 20A 8SON
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 8 Weeks ACTIVE (Last Updated: 5 days ago) Gold Surface Mount Surface Mount 8-PowerTDFN - 8 - - - - - - -55°C~150°C TJ Tape & Reel (TR) - NexFET™ e3 yes Active 1 (Unlimited) 8 - - Matte Tin (Sn) - - 6W - NO LEAD 260 1 0.65mm not_compliant - NOT SPECIFIED CSD87334 - - - 12V - - SWITCHING CONTROLLER - - - - - - 2 N-Channel (Dual) Asymmetrical - 24V 6m Ω @ 12A, 8V 1.2V @ 250μA - PULSE WIDTH MODULATION 1260pF @ 15V 8.3nC @ 4.5V - 20mA 30V - - BUCK - - - - - 1500kHz - - - - - - - - Standard - 1.05mm 3.3mm 3.3mm 900μm - - ROHS3 Compliant Contains Lead
                                        CSD87334Q3DT
                                        CSD87334Q3DT

                                        Texas Instruments
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        Diodes Incorporated DMC2004VK-7
                                        Mfr. Тип
                                        DMC2004VK-7
                                        Anlielectronics Тип

                                        		Diodes Incorporated
                                        MOSFET N/P-CH 20V SOT-563
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 19 Weeks - - Surface Mount Surface Mount SOT-563, SOT-666 - 6 3.005049mg SILICON - 670mA 530mA 2 - -55°C~150°C TJ Tape & Reel (TR) 2011 - e3 yes Active 1 (Unlimited) 6 EAR99 900mOhm Matte Tin (Sn) HIGH RELIABILITY - 400mW DUAL FLAT 260 - - - - 40 DMC2004VK 6 - - - - 2 - - ENHANCEMENT MODE 1W - - 450mW N and P-Channel SWITCHING - 550m Ω @ 540mA, 4.5V 1V @ 250μA - - 150pF @ 16V - - - - N-CHANNEL AND P-CHANNEL - - 670mA - - 8V - - - - 20V - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate 600μm - 1.6mm 1.2mm - No No SVHC ROHS3 Compliant Lead Free
                                          DMC2004VK-7
                                          DMC2004VK-7

                                          Diodes Incorporated
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
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                                          Discrete Semiconductor Products

                                          Transistors - FETs, MOSFETs - Arrays definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - Arrays Product Listing: IRF7341GTRPBF,EM6K31T2R,STL36DN6F7,FDS6984AS,DMN2019UTS-13.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - FETs, MOSFETs - Arrays has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.