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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Transistor Element Material Current - Continuous Drain (Id) @ 25℃ Number of Elements Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Resistance Terminal Finish Max Operating Temperature Additional Feature Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Qualification Status Configuration Row Spacing Number of Channels Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max FET Type Transistor Application Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Continuous Drain Current (ID) Threshold Voltage Gate to Source Voltage (Vgs) Max Dual Supply Voltage Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) Dual Supply Voltage Input Capacitance DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology Max Junction Temperature (Tj) FET Feature Drain to Source Resistance Rds On Max Nominal Vgs Feedback Cap-Max (Crss) Min Breakdown Voltage Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
ROHM Semiconductor SH8J62TB1
Mfr. Тип
SH8J62TB1
Anlielectronics Тип

ROHM Semiconductor
MOSFET 2P-CH 30V 4.5A SOP8
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 20 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 8-SOP - - 4.5A - 70 ns 150°C TJ Tape & Reel (TR) 2010 - - - Active 1 (Unlimited) - - - - - 150°C - - 2W - - - - - - *J62 - - - - - 2 - - 2W - 7 ns 2W 2 P-Channel (Dual) - 56mOhm @ 4.5A, 10V 2.5V @ 1mA 800pF @ 10V 8nC @ 5V - 30V - - 4.5A - 20V - - - -30V - - 800pF - - - 150°C Logic Level Gate 40mOhm 56 mΩ - - - 1.75mm - - - - ROHS3 Compliant -
    SH8J62TB1
    SH8J62TB1

    ROHM Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Microchip Technology TC2320TG-G
    Mfr. Тип
    TC2320TG-G
    Anlielectronics Тип

    		Microchip Technology
    Mosfet, N And P Channel, 200V , 8 SOIC 3.90MM(.150IN) T/r
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 3 Weeks - Tin Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 84.99187mg SILICON - 2 20 ns -55°C~150°C TJ Tape & Reel (TR) 2008 - e3 - Active 1 (Unlimited) 8 - EAR99 - - - LOW THRESHOLD - - DUAL GULL WING 260 - - 40 - - - - - - 2 - ENHANCEMENT MODE - - 10 ns - N and P-Channel SWITCHING 7 Ω @ 1A, 10V 2V @ 1mA 110pF @ 25V - 15ns - N-CHANNEL AND P-CHANNEL 15 ns 2A - 20V - - 7Ohm 200V - - - - - METAL-OXIDE SEMICONDUCTOR - Standard - - - - - 1.65mm 4.9mm 3.9mm No - ROHS3 Compliant -
      TC2320TG-G
      TC2320TG-G

      Microchip Technology
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Infineon Technologies IRF7379PBF
      Mfr. Тип
      IRF7379PBF
      Anlielectronics Тип

      		Infineon Technologies
      MOSFET N/P-CH 30V 8-SOIC
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 - - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - SILICON 5.8A 4.3A 2 25 ns -55°C~150°C TJ Tube 2004 HEXFET® - - Obsolete 1 (Unlimited) 8 SMD/SMT EAR99 - - - AVALANCHE RATED, ULTRA LOW RESISTANCE - 2.5W DUAL GULL WING - - 5.8A - IRF7379PBF - - - - 6.3 mm - - ENHANCEMENT MODE 2.5W - - - N and P-Channel SWITCHING 45m Ω @ 5.8A, 10V 1V @ 250μA 520pF @ 25V 25nC @ 10V 17ns - N-CHANNEL AND P-CHANNEL 18 ns 4.3A 1V 20V - - 0.045Ohm 30V 46A 30V - - - METAL-OXIDE SEMICONDUCTOR - Standard - - 1 V - - 1.4986mm 4.9784mm 3.9878mm No No SVHC RoHS Compliant Lead Free
        IRF7379PBF
        IRF7379PBF

        Infineon Technologies
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Nexperia USA Inc. PMDPB58UPE,115
        Mfr. Тип
        PMDPB58UPE,115
        Anlielectronics Тип

        		Nexperia USA Inc.
        MOSFET 2P-CH 20V 3.6A HUSON6
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 8 Weeks - - - Surface Mount 6-UDFN Exposed Pad YES 6 - - SILICON - 2 41 ns -55°C~150°C TJ Tape & Reel (TR) 2012 - e3 - Active 1 (Unlimited) 6 - - - Tin (Sn) - - - 515mW - - - - - - - 6 - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - DRAIN 7 ns - 2 P-Channel (Dual) SWITCHING 67m Ω @ 2A, 4.5V 950mV @ 250μA 804pF @ 10V 9.5nC @ 4.5V 15ns 20V - 14 ns 3.6A - 8V -20V - - - 14.4A - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - - No - ROHS3 Compliant -
          PMDPB58UPE,115
          PMDPB58UPE,115

          Nexperia USA Inc.
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Alpha & Omega Semiconductor Inc. AO4842
          Mfr. Тип
          AO4842
          Anlielectronics Тип

          		Alpha & Omega Semiconductor Inc.
          MOSFET 2N-CH 30V 7.7A 8-SOIC
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 16 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - - - 2 - -55°C~150°C TJ Tape & Reel (TR) 2011 - - - Not For New Designs 1 (Unlimited) - - - - - - - - 2W - - - - - - - - - - - - - - - 2W - - - 2 N-Channel (Dual) - 22m Ω @ 7.5A, 10V 2.6V @ 250μA 448pF @ 15V 11nC @ 10V - 30V - - 7.7A - - - - - - - - - - - - - Logic Level Gate - - - - - - - - No - ROHS3 Compliant Lead Free
            AO4842
            AO4842

            Alpha & Omega Semiconductor Inc.
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            STMicroelectronics STL15DN4F5
            Mfr. Тип
            STL15DN4F5
            Anlielectronics Тип

            		STMicroelectronics
            Trans MOSFET N-CH 40V 60A 8-Pin Power Flat T/R
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 14 Weeks ACTIVE (Last Updated: 8 months ago) - Surface Mount Surface Mount 8-PowerVDFN - 5 - - SILICON - 2 32 ns -55°C~175°C TJ Tape & Reel (TR) - Automotive, AEC-Q101, STripFET™ V e3 - Active 1 (Unlimited) 6 - EAR99 9MOhm Matte Tin (Sn) - ULTRA LOW-ON RESISTANCE - 60W - FLAT 260 - - - STL15 8 R-PDSO-F6 - - - - Dual ENHANCEMENT MODE 60W DRAIN 18 ns - 2 N-Channel (Dual) SWITCHING 9m Ω @ 7.5A, 10V 4V @ 250μA 1550pF @ 25V 25nC @ 10V 45ns 40V - 5 ns 60A 2V 20V - - - 40V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - 850μm 4.75mm 5.75mm No No SVHC ROHS3 Compliant Lead Free
              STL15DN4F5
              STL15DN4F5

              STMicroelectronics
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              ROHM Semiconductor US6K2TR
              Mfr. Тип
              US6K2TR
              Anlielectronics Тип

              		ROHM Semiconductor
              MOSFET 2N-CH 30V 1.4A TUMT6
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 16 Weeks - - Surface Mount Surface Mount 6-SMD, Flat Leads - 6 - - SILICON - 2 13 ns 150°C TJ Tape & Reel (TR) 2007 - e2 yes Active 1 (Unlimited) 6 - EAR99 380MOhm Tin/Copper (Sn/Cu) - - 30V 1W - - 260 - 1.4A 10 *K2 6 - - - - - Dual ENHANCEMENT MODE 1W - 6 ns - 2 N-Channel (Dual) SWITCHING 240m Ω @ 1.4A, 10V 2.5V @ 1mA 70pF @ 10V 2nC @ 5V 6ns - - 8 ns 1.4A - 20V - - - 30V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - - No - ROHS3 Compliant Lead Free
                US6K2TR
                US6K2TR

                ROHM Semiconductor
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                ROHM Semiconductor UT6MA3TCR
                Mfr. Тип
                UT6MA3TCR
                Anlielectronics Тип

                		ROHM Semiconductor
                20V NCH PCH MIDDLE POWER MOSFET
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 20 Weeks - - - Surface Mount 6-PowerUDFN YES - - - SILICON 5A 5.5A 2 - -55°C~150°C TJ Cut Tape (CT) - - - - Active 1 (Unlimited) 6 - EAR99 - - - - - - DUAL NO LEAD NOT SPECIFIED not_compliant - NOT SPECIFIED - - S-PDSO-N6 - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - DRAIN - 2W N and P-Channel SWITCHING 59m Ω @ 5A, 4.5V 1.5V @ 1mA 460pF @ 10V 6.5nC @ 4.5V - 20V N-CHANNEL AND P-CHANNEL - - - - - 5.5A 0.042Ohm - 12A - - 20V 2 mJ METAL-OXIDE SEMICONDUCTOR - - - - - - - - - - - - ROHS3 Compliant -
                  UT6MA3TCR
                  UT6MA3TCR

                  ROHM Semiconductor
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  ON Semiconductor FDMS3615S
                  Mfr. Тип
                  FDMS3615S
                  Anlielectronics Тип

                  		ON Semiconductor
                  MOSFET DUAL N-Channel PowerTrench MOSFET
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 18 Weeks ACTIVE (Last Updated: 1 week ago) - Surface Mount Surface Mount 8-PowerTDFN - 8 - 90mg SILICON 16A 18A 2 24 ns -55°C~150°C TJ Tape & Reel (TR) 2011 PowerTrench® e3 yes Active 1 (Unlimited) 6 - EAR99 - Tin (Sn) - - - 1W - - - - - - - - R-PDSO-N6 - - - - - ENHANCEMENT MODE 1W DRAIN SOURCE - - 2 N-Channel (Dual) Asymmetrical SWITCHING 5.8m Ω @ 16A, 10V 2.5V @ 250μA 1765pF @ 13V 27nC @ 10V 3ns - - 2.2 ns 18A - 20V - 16A - 25V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - 115 pF - 1.05mm 5.1mm 6.1mm No - ROHS3 Compliant -
                    FDMS3615S
                    FDMS3615S

                    ON Semiconductor
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    ON Semiconductor FDMB3900AN
                    Mfr. Тип
                    FDMB3900AN
                    Anlielectronics Тип

                    		ON Semiconductor
                    MOSFET 25V Dual N-Chanenl
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 23 Weeks ACTIVE (Last Updated: 4 days ago) - Surface Mount Surface Mount 8-PowerWDFN - 8 - 60μg SILICON - 2 15 ns -55°C~150°C TJ Tape & Reel (TR) - PowerTrench® e4 yes Active 1 (Unlimited) 6 - EAR99 - Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) - ULTRA-LOW RESISTANCE - 800mW - - - - - - - - R-PDSO-N6 - - - - Dual ENHANCEMENT MODE 1.6W DRAIN 6 ns - 2 N-Channel (Dual) SWITCHING 23m Ω @ 7A, 10V 3V @ 250μA 890pF @ 13V 17nC @ 10V 3ns 25V - 3 ns 7A - 20V - 7A - 25V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - 750μm 3mm 1.9mm No - ROHS3 Compliant -
                      FDMB3900AN
                      FDMB3900AN

                      ON Semiconductor
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Infineon Technologies IRL6297SDTRPBF
                      Mfr. Тип
                      IRL6297SDTRPBF
                      Anlielectronics Тип

                      		Infineon Technologies
                      MOSFET 2N-CH 20V 15A DIRECTFET
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 12 Weeks - - Surface Mount Surface Mount DirectFET™ Isometric SA - 8 - - - - 2 - -40°C~150°C TJ Tape & Reel (TR) 2013 HEXFET® - - Active 1 (Unlimited) - - EAR99 - - - - - 1.7W - - - - - - - - - - - - - - ENHANCEMENT MODE 1.7W - - - 2 N-Channel (Dual) - 4.9m Ω @ 15A, 4.5V 1.1V @ 35μA 2245pF @ 10V 54nC @ 10V - 20V - - 15A 800mV 20V - - - - - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - - - No SVHC ROHS3 Compliant Lead Free
                        IRL6297SDTRPBF
                        IRL6297SDTRPBF

                        Infineon Technologies
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        ON Semiconductor FDS6894A
                        Mfr. Тип
                        FDS6894A
                        Anlielectronics Тип

                        		ON Semiconductor
                        MOSFET 2N-CH 20V 8A 8SOIC
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 - - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 187mg - - 2 33 ns -55°C~150°C TJ Tape & Reel (TR) - PowerTrench® - - Obsolete 1 (Unlimited) - - - - - - - 20V 900mW - - - - 8A - - - - - - - - Dual - 2W - - - 2 N-Channel (Dual) - 17m Ω @ 8A, 4.5V 1.5V @ 250μA 1676pF @ 10V 24nC @ 4.5V 14ns - - 12 ns 8A - 8V - - - 20V - - - - - - - Logic Level Gate - - - - - - - - - - RoHS Compliant Lead Free
                          FDS6894A
                          FDS6894A

                          ON Semiconductor
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Texas Instruments CSD75207W15
                          Mfr. Тип
                          CSD75207W15
                          Anlielectronics Тип

                          		Texas Instruments
                          MOSFET Dual P-CH NexFET Pwr MOSFET
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 12 Weeks ACTIVE (Last Updated: 5 days ago) Copper, Silver, Tin Surface Mount Surface Mount 9-UFBGA, DSBGA - 9 - - - - - 32.1 ns -55°C~150°C TJ Tape & Reel (TR) - NexFET™ e1 yes Active 1 (Unlimited) - - - - Tin/Silver/Copper (Sn/Ag/Cu) - - - 700mW BOTTOM BALL - - - - CSD75207 - - - - - - - -0.8 - - 12.8 ns - 2 P-Channel (Dual) Common Source - 162m Ω @ 1A, 1.8V 1.1V @ 250μA 595pF @ 10V 3.7nC @ 4.5V 8.6ns - - 16 ns 3.9A - -6V - - - - - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - 625μm 1.75mm 1.75mm - - ROHS3 Compliant Lead Free
                            CSD75207W15
                            CSD75207W15

                            Texas Instruments
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            ON Semiconductor FDMD8280
                            Mfr. Тип
                            FDMD8280
                            Anlielectronics Тип

                            		ON Semiconductor
                            PT7 80/20V Dual Nch PowerTrench MOSFET - 12LD, PQFN, POWERCLIP DUAL, JEDEC, MO-240, VARIATION BA, 3.3
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 12 Weeks ACTIVE (Last Updated: 1 day ago) - Surface Mount Surface Mount 12-PowerWDFN - 12 - 82.3188mg SILICON - 2 26 ns -55°C~150°C TJ Tape & Reel (TR) - PowerTrench® e3 yes Active 1 (Unlimited) 12 - EAR99 - Tin (Sn) - - - 1W - NO LEAD 260 not_compliant - NOT SPECIFIED - - - - - - 2 Dual ENHANCEMENT MODE - DRAIN SOURCE 15 ns - 2 N-Channel (Dual) SWITCHING 8.2m Ω @ 11A, 10V 4V @ 250μA 3050pF @ 40V 44nC @ 10V 12ns 80V - 8.9 ns 11A - 20V - - - 80V - - - - - METAL-OXIDE SEMICONDUCTOR - Standard - - - - - - - - - - ROHS3 Compliant -
                              FDMD8280
                              FDMD8280

                              ON Semiconductor
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Alpha & Omega Semiconductor Inc. AO4803A
                              Mfr. Тип
                              AO4803A
                              Anlielectronics Тип

                              		Alpha & Omega Semiconductor Inc.
                              MOSFET 2P-CH 30V 5A 8-SOIC
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 16 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - - - 2 - -55°C~150°C TJ Tape & Reel (TR) 2011 - - - Not For New Designs 1 (Unlimited) - - - - - - - - 2W - - - - - - - - - - - - - - - 2W - - - 2 P-Channel (Dual) - 46m Ω @ 5A, 10V 2.5V @ 250μA 520pF @ 15V 11nC @ 10V - 30V - - 5A - 20V - - - - - - - - - - - Logic Level Gate - - - - - - - - - - ROHS3 Compliant -
                                AO4803A
                                AO4803A

                                Alpha & Omega Semiconductor Inc.
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                STMicroelectronics STS7C4F30L
                                Mfr. Тип
                                STS7C4F30L
                                Anlielectronics Тип

                                		STMicroelectronics
                                MOSFET N/P-CH 30V 7A/4A 8SOIC
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - SILICON 7A 4A 2 - 150°C TJ Tape & Reel (TR) - STripFET™ e4 - Obsolete 1 (Unlimited) 8 - EAR99 - NICKEL PALLADIUM GOLD - - - 2W DUAL GULL WING 260 - 7A 30 STS7C4 8 - Not Qualified SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - - - - N and P-Channel SWITCHING 22m Ω @ 3.5A, 10V 2.5V @ 250μA 1050pF @ 25V 23nC @ 5V 35ns 30V N-CHANNEL AND P-CHANNEL - 4A - - - 7A 0.026Ohm - - - - 30V - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - - - - Non-RoHS Compliant Contains Lead
                                  STS7C4F30L
                                  STS7C4F30L

                                  STMicroelectronics
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  ON Semiconductor FDZ1323NZ
                                  Mfr. Тип
                                  FDZ1323NZ
                                  Anlielectronics Тип

                                  		ON Semiconductor
                                  MOSFET Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSFET
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 10 Weeks ACTIVE (Last Updated: 1 week ago) - Surface Mount Surface Mount 6-XFBGA, WLCSP - 6 - 50mg SILICON - 2 34 ns -55°C~150°C TJ Tape & Reel (TR) 2011 PowerTrench® e1 yes Active 1 (Unlimited) 6 - EAR99 - Tin/Silver/Copper (Sn/Ag/Cu) - - - 2W BOTTOM BALL - - - - - - - - - - - Single ENHANCEMENT MODE 2W - 12 ns 500mW 2 N-Channel (Dual) Common Drain SWITCHING 13m Ω @ 1A, 4.5V 1.2V @ 250μA 2055pF @ 10V 24nC @ 10V 13ns 20V - 13 ns 10A - 12V - - - 20V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - 380 pF - 150μm 2.3mm 1.3mm No - ROHS3 Compliant -
                                    FDZ1323NZ
                                    FDZ1323NZ

                                    ON Semiconductor
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Nexperia USA Inc. 2N7002BKV,115
                                    Mfr. Тип
                                    2N7002BKV,115
                                    Anlielectronics Тип

                                    		Nexperia USA Inc.
                                    2N7002BKV Series Dual N-Channel 60 V 1.6 Ohm 350 mW 0.6nC TrenchMOS FET - SOT666
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 4 Weeks - Tin - Surface Mount SOT-563, SOT-666 YES 6 - - SILICON - 2 12 ns 150°C TJ Tape & Reel (TR) 2010 Automotive, AEC-Q101, TrenchMOS™ e3 - Active 1 (Unlimited) 6 - EAR99 1.6Ohm - - LOGIC LEVEL COMPATIBLE - 350mW - FLAT 260 - - 40 - 6 - - - - - Dual ENHANCEMENT MODE 525mW - 5 ns 350mW 2 N-Channel (Dual) SWITCHING 1.6 Ω @ 500mA, 10V 2.1V @ 250μA 50pF @ 10V 0.6nC @ 4.5V 6ns - - 7 ns 340mA - 20V 60V 0.34A - 60V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - - No - ROHS3 Compliant Lead Free
                                      2N7002BKV,115
                                      2N7002BKV,115

                                      Nexperia USA Inc.
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      Diodes Incorporated DMP3036SSD-13
                                      Mfr. Тип
                                      DMP3036SSD-13
                                      Anlielectronics Тип

                                      		Diodes Incorporated
                                      MOSFET 2P-CH 30V 10.6A 8-SO
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 23 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - SILICON - 2 - -55°C~150°C TJ Tape & Reel (TR) 2014 - e3 - Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - - - 1.2W - GULL WING NOT SPECIFIED - - NOT SPECIFIED - - - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - - - 1.2W 2 P-Channel (Dual) SWITCHING 20m Ω @ 9A, 10V 3V @ 250μA 1931pF @ 15V 16.5nC @ 10V - 30V - - 10.6A - - - - 0.02Ohm - - - - 30V - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - - - - ROHS3 Compliant -
                                        DMP3036SSD-13
                                        DMP3036SSD-13

                                        Diodes Incorporated
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        ON Semiconductor NDC7003P
                                        Mfr. Тип
                                        NDC7003P
                                        Anlielectronics Тип

                                        		ON Semiconductor
                                        Trans MOSFET P-CH 60V 0.34A 6-Pin SuperSOT T/R
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                                          		 23 Weeks ACTIVE (Last Updated: 3 days ago) Tin Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - 6 - 36mg SILICON 340mA 2 8 ns -55°C~150°C TJ Tape & Reel (TR) 2002 PowerTrench® e3 yes Active 1 (Unlimited) 6 - EAR99 5Ohm - - - -50V 960mW - GULL WING - - -220mA - - - - - - - 2 Dual ENHANCEMENT MODE 960mW - 3.2 ns 700mW 2 P-Channel (Dual) SWITCHING 5 Ω @ 340mA, 10V 3.5V @ 250μA 66pF @ 25V 2.2nC @ 10V 10ns - - 10 ns -340mA -1V 20V - 0.34A - -60V - - - - - METAL-OXIDE SEMICONDUCTOR 150°C Logic Level Gate - - -1.9 V - 60V 1.1mm 3mm 1.7mm No No SVHC ROHS3 Compliant Lead Free
                                          NDC7003P
                                          NDC7003P

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