[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Transistor Element Material Base Product Number Brand Channel Mode Continuous Drain Current Current - Continuous Drain (Id) @ 25℃ Drain-Source On-Volt Factory Pack QuantityFactory Pack Quantity Gate-Source Voltage (Max) Id - Continuous Drain Current Manufacturer Maximum Operating Temperature Mfr Minimum Operating Temperature Mounting Mounting Styles Number of Elements Operating Temp Range Operating Temperature Classification Package Type Part # Aliases Pd - Power Dissipation Product Status Qg - Gate Charge Qualification Rad Hardened Rds On - Drain-Source Resistance RoHS Transistor Polarity Turn Off Delay Time Typical Turn-Off Delay Time Typical Turn-On Delay Time Unit Weight Vds - Drain-Source Breakdown Voltage Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Type Resistance Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature Subcategory Voltage - Rated DC Max Power Dissipation Technology Terminal Position Terminal Form Peak Reflow Temperature (Cel) Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Polarity Configuration Number of Channels Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max FET Type Transistor Application Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Product Type Transistor Type Continuous Drain Current (ID) Threshold Voltage Gate to Source Voltage (Vgs) Max Dual Supply Voltage Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) Input Capacitance DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology FET Feature Drain to Source Resistance Rds On Max Nominal Vgs Product Category Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
ON Semiconductor MCH6604-TL-E
Mfr. Тип
MCH6604-TL-E
Anlielectronics Тип

ON Semiconductor
MOSFET 2N-CH 50V 0.25A MCPH6
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 - LIFETIME (Last Updated: 11 hours ago) - - Surface Mount 6-SMD, Flat Leads YES 6 - - - - - - - - - - - - - - - - - - 2 - - - - - - - - - - - - 190 ns - - - - - - 150°C TJ Tape & Reel (TR) 2006 - e6 yes Obsolete 1 (Unlimited) - EAR99 - - Tin/Bismuth (Sn/Bi) - - - - - 800mW - - - - - - - 6 - - - - - Dual - 800mW - 18 ns - 2 N-Channel (Dual) - 7.8 Ω @ 50mA, 4V - 6.6pF @ 10V 1.57nC @ 10V 42ns 50V - 105 ns - - 250mA - 10V - - - 50V - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - No - RoHS Compliant Lead Free
    MCH6604-TL-E
    MCH6604-TL-E

    ON Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    ROHM Semiconductor QS6J11TR
    Mfr. Тип
    QS6J11TR
    Anlielectronics Тип

    		ROHM Semiconductor
    MOSFET 2P-CH 12V 2A TSMT6
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 20 Weeks - - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - 6 - - SILICON - - - - - - - - - - - - - - - 1 - - - - - - - - - - - - 65 ns - - - - - - 150°C TJ Tape & Reel (TR) 2009 - e1 yes Active 1 (Unlimited) 8 EAR99 - - - - - - - - 600mW - - GULL WING 260 - 10 *J11 6 - R-PDSO-G8 - - 2 Dual ENHANCEMENT MODE - - 10 ns - 2 P-Channel (Dual) SWITCHING 105m Ω @ 2A, 4.5V 1V @ 1mA 770pF @ 6V 6.5nC @ 4.5V 17ns 12V - 35 ns - - 2A - 10V - 2A 0.105Ohm - 8A - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - No - ROHS3 Compliant Lead Free
      QS6J11TR
      QS6J11TR

      ROHM Semiconductor
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      ON Semiconductor FDMQ8203
      Mfr. Тип
      FDMQ8203
      Anlielectronics Тип

      		ON Semiconductor
      This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge.
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 9 Weeks ACTIVE (Last Updated: 2 days ago) - Surface Mount Surface Mount 12-WDFN Exposed Pad - 12 - 210mg SILICON - - - - 3.4A 2.6A - - - - - - - - - - 4 - - - - - - - - - - - - - - - - - - - -55°C~150°C TJ Tape & Reel (TR) - GreenBridge™ PowerTrench® e4 yes Active 1 (Unlimited) 12 EAR99 - - Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) - - - - - 2.5W - - - - - - FDMQ8203 - - - - - - Dual ENHANCEMENT MODE 2.5W DRAIN - - 2 N and 2 P-Channel (H-Bridge) SWITCHING 110m Ω @ 3A, 10V 4V @ 250μA 210pF @ 50V 5nC @ 10V 2.8ns 100V 80V N-CHANNEL AND P-CHANNEL 2.7 ns - - 2.6A 3V 20V - 6A 0.11Ohm -80V - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - 3 V - 750μm 5mm 4.5mm No No SVHC ROHS3 Compliant Lead Free
        FDMQ8203
        FDMQ8203

        ON Semiconductor
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Nexperia USA Inc. NX7002AKS,115
        Mfr. Тип
        NX7002AKS,115
        Anlielectronics Тип

        		Nexperia USA Inc.
        MOSFET 2N-CH 60V 0.17A SC-88
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 4 Weeks - - - Surface Mount 6-TSSOP, SC-88, SOT-363 - 6 6-TSSOP - - - - - - 170mA - - - - - - - - - - - - - - - - - - - - - - - 20 ns - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2012 - - - Active 1 (Unlimited) - - - - - 150°C -55°C - - - 220mW - - - - - - - - - - - - 2 Dual - - - 6 ns 220mW 2 N-Channel (Dual) - 4.5Ohm @ 100mA, 10V 2.1V @ 250μA 17pF @ 10V 0.43nC @ 4.5V 7ns 60V - 14 ns - - 170mA - 1.6V 60V - - 60V - 17pF - - - Logic Level Gate 3Ohm 4.5 Ω - - - - - No - ROHS3 Compliant -
          NX7002AKS,115
          NX7002AKS,115

          Nexperia USA Inc.
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Diodes Incorporated ZXMC4A16DN8TA
          Mfr. Тип
          ZXMC4A16DN8TA
          Anlielectronics Тип

          		Diodes Incorporated
          MOSFET N/P-CH 40V 4A/3.6A 8SOIC
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 - - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON - - - - 5.2A Ta 4.7A Ta - - - - - - - - - - 2 - - - - - - - - - - - - 33 ns - - - - - - -55°C~150°C TJ Cut Tape (CT) 2012 - e3 yes Obsolete 1 (Unlimited) 8 EAR99 - 60mOhm Matte Tin (Sn) - - - - - 1.8W - - GULL WING 260 4.7A 30 - 8 - - - - 2 Dual ENHANCEMENT MODE 2.1W - 3.7 ns - N and P-Channel Complementary SWITCHING 50m Ω @ 4.5A, 10V, 60m Ω @ 3.8A, 10V 1V @ 250mA (Min) 770pF @ 40V 1000pF @ 20V 17nC @ 10V 5.5ns - N-CHANNEL AND P-CHANNEL 18 ns - - 5.2A - 20V - 4A - 40V - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - 1.5mm 5mm 4mm No No SVHC ROHS3 Compliant Lead Free
            ZXMC4A16DN8TA
            ZXMC4A16DN8TA

            Diodes Incorporated
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Diodes Incorporated ZXMHC10A07N8TC
            Mfr. Тип
            ZXMHC10A07N8TC
            Anlielectronics Тип

            		Diodes Incorporated
            ZXMHC10A07N8TC Series 100 V 1 O Dual N & P Ch Enhancement Mode MOSFET - SOIC-8
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 17 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON - - - - 800mA 680mA - - - - - - - - - - 4 - - - - - - - - - - - - 5.9 ns - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2009 - e3 yes Active 1 (Unlimited) 8 EAR99 - - Matte Tin (Sn) - - - - - 870mW - DUAL GULL WING 260 - 40 ZXMHC10A07 8 - - - - - - ENHANCEMENT MODE 1.36W - 1.6 ns - 2 N and 2 P-Channel (H-Bridge) SWITCHING 700m Ω @ 1.5A, 10V 4V @ 250μA 138pF @ 60V 2.9nC @ 10V 2.1ns 100V N-CHANNEL AND P-CHANNEL 3.3 ns - - 1A - 20V - 1A 0.7Ohm -100V - - - - METAL-OXIDE SEMICONDUCTOR Standard - - - - 1.5mm 5mm 4mm No No SVHC ROHS3 Compliant Lead Free
              ZXMHC10A07N8TC
              ZXMHC10A07N8TC

              Diodes Incorporated
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Nexperia USA Inc. BUK7K25-40E,115
              Mfr. Тип
              BUK7K25-40E,115
              Anlielectronics Тип

              		Nexperia USA Inc.
              MOSFET 2N-CH 40V 27A LFPAK56D
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 12 Weeks - - - Surface Mount SOT-1205, 8-LFPAK56 YES 8 - - SILICON - - - - - - - - - - - - - - - 2 - - - - - - - - - - - - 8.3 ns - - - - - - -55°C~175°C TJ Tape & Reel (TR) 2013 Automotive, AEC-Q101, TrenchMOS™ e3 - Active 1 (Unlimited) 6 - - - Tin (Sn) - - AVALANCHE RATED - - 32W - - GULL WING - - - - 8 AEC-Q101; IEC-60134 R-PDSO-G6 - - 2 Dual ENHANCEMENT MODE 32W DRAIN 4.4 ns - 2 N-Channel (Dual) SWITCHING 25m Ω @ 5A, 10V 4V @ 1mA 525pF @ 25V 7.9nC @ 10V 4.5ns - - 5.2 ns - - 27A - 20V 40V - - 40V 107A - - 10 mJ METAL-OXIDE SEMICONDUCTOR Standard - - - - - - - No - ROHS3 Compliant -
                BUK7K25-40E,115
                BUK7K25-40E,115

                Nexperia USA Inc.
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Infineon Technologies IRFHM792TRPBF
                Mfr. Тип
                IRFHM792TRPBF
                Anlielectronics Тип

                		Infineon Technologies
                MOSFET 2N-CH 100V 2.3A 8PQFN
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 12 Weeks - - Surface Mount Surface Mount 8-PowerVDFN - 8 - - SILICON - - - - - - - - - - - - - - - 2 - - - - - - - - - - - - 5.2 ns - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2013 HEXFET® e3 - Active 1 (Unlimited) 8 EAR99 - - Matte Tin (Sn) - - - - - 2.3W - - - - - - IRFHM792PBF - - - - - - Dual ENHANCEMENT MODE 2.3W DRAIN 3.4 ns - 2 N-Channel (Dual) SWITCHING 195m Ω @ 2.9A, 10V 4V @ 10μA 251pF @ 25V 6.3nC @ 10V 4.7ns 100V - 2.6 ns - - 2.3A - 20V - 3.4A 0.195Ohm 100V 14A - - - METAL-OXIDE SEMICONDUCTOR Standard - - - - - - - No - ROHS3 Compliant Lead Free
                  IRFHM792TRPBF
                  IRFHM792TRPBF

                  Infineon Technologies
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Diodes Incorporated DMN4034SSD-13
                  Mfr. Тип
                  DMN4034SSD-13
                  Anlielectronics Тип

                  		Diodes Incorporated
                  MOSFET 2N-CH 40V 4.8A 8SO
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 17 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON - - - - - - - - - - - - - - - 2 - - - - - - - - - - - - 14 ns - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2011 - e3 yes Active 1 (Unlimited) 8 EAR99 - - Matte Tin (Sn) - - HIGH RELIABILITY - - 1.8W - - GULL WING 260 - 40 DMN4034SSD 8 - - - - - Dual ENHANCEMENT MODE 2.14W - 2.7 ns - 2 N-Channel (Dual) SWITCHING 34m Ω @ 6A, 10V 3V @ 250μA 453pF @ 20V 18nC @ 10V 2.7ns 40V - 6 ns - - 4.8A - 20V - 6.3A 0.034Ohm - - - 40V - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - 1.5mm 5mm 4mm No No SVHC ROHS3 Compliant Lead Free
                    DMN4034SSD-13
                    DMN4034SSD-13

                    Diodes Incorporated
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Infineon Technologies IRF7343QTRPBF
                    Mfr. Тип
                    IRF7343QTRPBF
                    Anlielectronics Тип

                    		Infineon Technologies
                    MOSFET N/P-CH 55V 8-SOIC
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 - - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - - - - - - 4.7A 3.4A - - - - - - - - - - 2 - - - - - - - - - - - - - - - - - - - - Cut Tape (CT) 2010 HEXFET® - - Obsolete 1 (Unlimited) - EAR99 - - - 150°C -55°C - - - 2W - - - - - - IRF7343QPBF - - - - - - - ENHANCEMENT MODE 2W - - - N and P-Channel - 50m Ω @ 4.7A, 10V 1V @ 250μA 740pF @ 25V 36nC @ 10V - 55V N-CHANNEL AND P-CHANNEL - - - 4.7A - 20V - - - - - - - - METAL-OXIDE SEMICONDUCTOR Standard - - - - 1.4986mm 4.9784mm 3.9878mm No - RoHS Compliant -
                      IRF7343QTRPBF
                      IRF7343QTRPBF

                      Infineon Technologies
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Nexperia USA Inc. BUK9K17-60EX
                      Mfr. Тип
                      BUK9K17-60EX
                      Anlielectronics Тип

                      		Nexperia USA Inc.
                      MOSFET 2N-CH 60V 26A 56LFPAK
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 12 Weeks - - Surface Mount Surface Mount SOT-1205, 8-LFPAK56 - 8 - - SILICON - - - - - - - - - - - - - - - 2 - - - - - - - - - - - - - - - - - - - -55°C~175°C TJ Tape & Reel (TR) 2014 - - - Active 1 (Unlimited) 6 - - - - - - - - - 53W - - GULL WING - - - - 8 AEC-Q101; IEC-60134 R-PDSO-G6 - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - DRAIN - 53W 2 N-Channel (Dual) SWITCHING 15.6m Ω @ 10A, 10V 2.1V @ 1mA 2223pF @ 25V 16.5nC @ 5V - 60V - - - - 26A - - - - 0.017Ohm - - - 60V 64 mJ METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - - - ROHS3 Compliant -
                        BUK9K17-60EX
                        BUK9K17-60EX

                        Nexperia USA Inc.
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        ON Semiconductor MCH6660-TL-W
                        Mfr. Тип
                        MCH6660-TL-W
                        Anlielectronics Тип

                        		ON Semiconductor
                        MOSFET N/P-CH 20V 2A/1.5A MCPH6
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 7 Weeks ACTIVE (Last Updated: 2 days ago) - Surface Mount Surface Mount 6-SMD, Flat Leads - 6 - - SILICON - - - - 2A 1.5A - - - - - - - - - - 2 - - - - - - - - - - - - - - - - - - - 150°C TJ Tape & Reel (TR) - - e6 yes Active 1 (Unlimited) 6 EAR99 - - Tin/Bismuth (Sn/Bi) - - - - - 800mW - DUAL - NOT SPECIFIED - NOT SPECIFIED - - - - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - - N and P-Channel SWITCHING 136m Ω @ 1A, 4.5V 1.3V @ 1mA 128pF @ 10V 1.8nC @ 4.5V - 20V N-CHANNEL AND P-CHANNEL - - - 1.5A - 10V - 2A - - - - 20V - METAL-OXIDE SEMICONDUCTOR Logic Level Gate, 1.8V Drive - - - - - - - - - ROHS3 Compliant Lead Free
                          MCH6660-TL-W
                          MCH6660-TL-W

                          ON Semiconductor
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Diodes Incorporated DMN4027SSD-13
                          Mfr. Тип
                          DMN4027SSD-13
                          Anlielectronics Тип

                          		Diodes Incorporated
                          MOSFET 2N-CH 40V 5.4A 8SO
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 17 Weeks - Tin Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON - - - - - - - - - - - - - - - 2 - - - - - - - - - - - - 15.4 ns - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2010 - e3 yes Active 1 (Unlimited) 8 EAR99 - - - - - HIGH RELIABILITY - - 1.8W - - GULL WING 260 - 40 DMN4027SSD 8 - - - - - Dual ENHANCEMENT MODE 2.1W - 3.1 ns - 2 N-Channel (Dual) SWITCHING 27m Ω @ 7A, 10V 3V @ 250μA 604pF @ 20V 12.9nC @ 10V 3.1ns 40V - 7.5 ns - - 5.4A - 20V - 7.1A - 40V - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - 1.5mm 5mm 4mm No No SVHC ROHS3 Compliant -
                            DMN4027SSD-13
                            DMN4027SSD-13

                            Diodes Incorporated
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            ON Semiconductor FDW2520C
                            Mfr. Тип
                            FDW2520C
                            Anlielectronics Тип

                            		ON Semiconductor
                            MOSFET N/P-CH 20V 6A/4.4A 8TSSOP
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - - - Surface Mount Surface Mount 8-TSSOP (0.173, 4.40mm Width) - 8 8-TSSOP - - - - - - 6A 4.4A - - - - - - - - - - 2 - - - - - - - - - - - - 60 ns - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2000 PowerTrench® - - Obsolete 1 (Unlimited) - - - - - 150°C -55°C - - - 600mW - - - - 6A - - - - - - - - - - 1W - - 600mW N and P-Channel - 18mOhm @ 6A, 4.5V 1.5V @ 250μA 1325pF @ 10V 20nC @ 4.5V 19ns 20V - - - - 6A 1V 12V - - - 20V - 1.325nF - - - Logic Level Gate 35mOhm 18 mΩ - - - - - - No SVHC RoHS Compliant Lead Free
                              FDW2520C
                              FDW2520C

                              ON Semiconductor
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Rohm Semiconductor QS6K1FRATR
                              Mfr. Тип
                              QS6K1FRATR
                              Anlielectronics Тип

                              		Rohm Semiconductor
                              2.5V DRIVE NCH NCH MOSFET (CORRE
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 - - - - Surface Mount SOT-23-6 Thin, TSOT-23-6 - - TSMT6 (SC-95) - - QS6K1 ROHM Semiconductor Enhancement 1(A) 1A (Ta) 30(V) 3000 12(V) 1 A ROHM Semiconductor + 150 C Rohm Semiconductor - 55 C Surface Mount SMD/SMT 2 -55C to 150C Military TSMT QS6K1FRA 1.25 W Active 1.7 nC AEC-Q101 No 170 mOhms Details N-Channel, NPN - 15 ns 7 ns 0.000353 oz 30 V - 12 V, + 12 V 500 mV 150°C Tape and Reel - Automotive, AEC-Q101 - - - - - - Power MOSFET - - - - - MOSFETs - - Si - - - - - - 6 - - N Dual 2 Channel - - 1.25(W) - - 900mW (Tc) 2 N-Channel (Dual) - 238mOhm @ 1A, 4.5V 1.5V @ 1mA 10V 2.4nC @ 4.5V 7 ns 30V - - MOSFET 2 N-Channel - - - - - - - - - - - - Logic Level Gate, 2.5V Drive - - - MOSFET - - - - - - -
                                QS6K1FRATR
                                QS6K1FRATR

                                Rohm Semiconductor
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Alpha & Omega Semiconductor Inc. AO8822
                                Mfr. Тип
                                AO8822
                                Anlielectronics Тип

                                		Alpha & Omega Semiconductor Inc.
                                MOSFET 2N-CH 20V 7A 8-TSSOP
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 18 Weeks - - Surface Mount Surface Mount 8-TSSOP (0.173, 4.40mm Width) - 8 - - - - - - - - - - - - - - - - - - 2 - - - - - - - - - - - - - - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2007 - - - Active 1 (Unlimited) - - - - - - - - - - 1.5W - - - - - - - - - - - - - - ENHANCEMENT MODE 1.5W - - - 2 N-Channel (Dual) Common Drain - 18m Ω @ 7A, 10V 1V @ 250μA 780pF @ 10V 18nC @ 10V - 20V - - - - 7A - 12V - 7A - - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - - - ROHS3 Compliant -
                                  AO8822
                                  AO8822

                                  Alpha & Omega Semiconductor Inc.
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Diodes Incorporated DMP2004VK-7
                                  Mfr. Тип
                                  DMP2004VK-7
                                  Anlielectronics Тип

                                  		Diodes Incorporated
                                  Dual P-Channel 20 V 900 mOhm Enhancement Mode Mosfet - SOT-563
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 16 Weeks - - Surface Mount Surface Mount SOT-563, SOT-666 - 6 - 3.005049mg SILICON - - - - - - - - - - - - - - - 2 - - - - - - - - - - - - - - - - - - - -65°C~150°C TJ Tape & Reel (TR) 2012 - e3 yes Active 1 (Unlimited) 6 EAR99 - 900mOhm Matte Tin (Sn) - - ESD PROTECTION, LOW THRESHOLD - - 400mW - - FLAT 260 - 40 DMP2004VK 6 - - - - - Dual ENHANCEMENT MODE 400mW - - - 2 P-Channel (Dual) SWITCHING 900m Ω @ 430mA, 4.5V 1V @ 250μA 175pF @ 16V - - 20V - - - - 530mA - 8V - 0.53A - -20V - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - 600μm 1.6mm 1.2mm No No SVHC ROHS3 Compliant Lead Free
                                    DMP2004VK-7
                                    DMP2004VK-7

                                    Diodes Incorporated
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    STMicroelectronics STS5DNF20V
                                    Mfr. Тип
                                    STS5DNF20V
                                    Anlielectronics Тип

                                    		STMicroelectronics
                                    MOSFET N-Ch 20 Volt 5 Amp
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 - - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - SILICON - - - - - - - - - - - - - - - 2 - - - - - - - - - - - - 27 ns - - - - - - -55°C~150°C TJ Tape & Reel (TR) - STripFET™ II e4 yes Obsolete 1 (Unlimited) 8 EAR99 - 40mOhm Nickel/Palladium/Gold (Ni/Pd/Au) - - - - 20V 2W - - GULL WING 260 5A 30 STS5D 8 - - - - - - ENHANCEMENT MODE 2W - 7 ns - 2 N-Channel (Dual) SWITCHING 40m Ω @ 2.5A, 4.5V 600mV @ 250μA 460pF @ 25V 11.5nC @ 4.5V 33ns - - 10 ns - - 5A 2.7V 12V - 5A - 20V - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - 1.65mm 5mm 4mm No No SVHC ROHS3 Compliant Lead Free
                                      STS5DNF20V
                                      STS5DNF20V

                                      STMicroelectronics
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      ON Semiconductor FDS6982S
                                      Mfr. Тип
                                      FDS6982S
                                      Anlielectronics Тип

                                      		ON Semiconductor
                                      MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 - - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 230.4mg - - - - - 6.3A 8.6A - - - - - - - - - - 2 - - - - - - - - - - - - 34 ns - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2000 PowerTrench®, SyncFET™ - - Obsolete 1 (Unlimited) - - - - - - - - - 30V 900mW - - - - - - - - - - - - - - - 2W - - - 2 N-Channel (Dual) - 28m Ω @ 6.3A, 10V 3V @ 250μA 2040pF @ 10V 12nC @ 5V 10ns - - 14 ns - - 8.6A 3V 20V - - - 30V - - - - - Logic Level Gate - - - - - - - - No SVHC RoHS Compliant Lead Free
                                        FDS6982S
                                        FDS6982S

                                        ON Semiconductor
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        ON Semiconductor NTND31015NZTAG
                                        Mfr. Тип
                                        NTND31015NZTAG
                                        Anlielectronics Тип

                                        		ON Semiconductor
                                        MOSFET NFET XLLGA6 20V 200M
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 5 Weeks ACTIVE (Last Updated: 1 day ago) - Surface Mount Surface Mount 6-XFLGA - 6 - - SILICON - - - - - - - - - - - - - - - 2 - - - - - - - - - - - - - - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2015 - e4 yes Active 1 (Unlimited) 6 - - - Nickel/Palladium/Gold (Ni/Pd/Au) - - - - - 125mW - BOTTOM NO LEAD NOT SPECIFIED - NOT SPECIFIED - - - - - SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR - - ENHANCEMENT MODE - - - 125mW 2 N-Channel (Dual) SWITCHING 1.5 Ω @ 100mA, 4.5V 1V @ 250μA 12.3pF @ 15V - - 20V - - - - 200mA - - - 0.2A - - - - 20V - METAL-OXIDE SEMICONDUCTOR Standard - - - - - - - - - ROHS3 Compliant Lead Free
                                          NTND31015NZTAG
                                          NTND31015NZTAG

                                          ON Semiconductor
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - FETs, MOSFETs - Arrays definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - Arrays Product Listing: MCH6604-TL-E,QS6J11TR,FDMQ8203,NX7002AKS,115,ZXMC4A16DN8TA.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - FETs, MOSFETs - Arrays has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.