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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Number of Pins Supplier Device Package Weight Transistor Element Material Current - Continuous Drain (Id) @ 25℃ Number of Elements Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Resistance Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Qualification Status Configuration Number of Channels Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max FET Type Transistor Application Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Halogen Free Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Continuous Drain Current (ID) Threshold Voltage Gate to Source Voltage (Vgs) Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) Dual Supply Voltage Input Capacitance DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology FET Feature Drain to Source Resistance Rds On Max Nominal Vgs Feedback Cap-Max (Crss) Height Length Width Thickness Radiation Hardening REACH SVHC RoHS Status Lead Free
Diodes Incorporated DMP6050SSD-13
Mfr. Тип
DMP6050SSD-13
Anlielectronics Тип

Diodes Incorporated
MOSFET 2P-CH 60V 4.8A 8-SO
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 23 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) 8 - - SILICON - 2 - -55°C~150°C TJ Tape & Reel (TR) 2014 - e3 - Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - - - - 1.2W - GULL WING NOT SPECIFIED - - NOT SPECIFIED - - - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - 1.2W 2 P-Channel (Dual) SWITCHING 55m Ω @ 5A, 10V 3V @ 250μA - 1293pF @ 30V 24nC @ 10V - 60V - - 4.8A - - - 0.055Ohm - - - - 60V - METAL-OXIDE SEMICONDUCTOR Standard - - - - - - - - - - ROHS3 Compliant -
    DMP6050SSD-13
    DMP6050SSD-13

    Diodes Incorporated
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Microchip Technology TC7920K6-G
    Mfr. Тип
    TC7920K6-G
    Anlielectronics Тип

    		Microchip Technology
    TWO PAIR, N- AND P-CH ENHANCEMENT-MODE MOSFET w/DRAIN-DIODES12 VDFN 4x4x1.0mm T/R
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 14 Weeks - Tin Surface Mount Surface Mount 12-VFDFN Exposed Pad 12 - - SILICON - 4 20 ns -55°C~150°C TJ Tape & Reel (TR) 2004 - e4 - Active 1 (Unlimited) 12 - EAR99 - Nickel/Palladium/Gold (Ni/Pd/Au) - - LOGIC LEVEL COMPATIBLE, LOW THRESHOLD - - DUAL NO LEAD 260 - - 40 - - - Not Qualified SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR - - ENHANCEMENT MODE - - 10 ns - 2 N and 2 P-Channel SWITCHING 10 Ω @ 1A, 10V 2.4V @ 1mA - 52pF @ 25V - 15ns 200V N-CHANNEL AND P-CHANNEL 15 ns - - - - 7Ohm - - - - 200V - METAL-OXIDE SEMICONDUCTOR Standard - - - - - - - - - - ROHS3 Compliant Lead Free
      TC7920K6-G
      TC7920K6-G

      Microchip Technology
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Alpha & Omega Semiconductor Inc. AON7934
      Mfr. Тип
      AON7934
      Anlielectronics Тип

      		Alpha & Omega Semiconductor Inc.
      MOSFET 2N-CH 30V 13A/15A 8DFN
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 16 Weeks - - Surface Mount Surface Mount 8-WDFN Exposed Pad - - - - 13A 15A - - -55°C~150°C TJ Digi-Reel® 2011 - - - Discontinued 1 (Unlimited) - - - - - - - - - 2.5W - - - - - - - - - - - - - ENHANCEMENT MODE - - - - 2 N-Channel (Half Bridge) - 10.2m Ω @ 13A, 10V 2.2V @ 250μA - 485pF @ 15V 11nC @ 10V - 30V - - 15A - - 18A - - - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - - - - ROHS3 Compliant -
        AON7934
        AON7934

        Alpha & Omega Semiconductor Inc.
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        ROHM Semiconductor SP8K2FU6TB
        Mfr. Тип
        SP8K2FU6TB
        Anlielectronics Тип

        		ROHM Semiconductor
        MOSFET 2N-CH 30V 6A 8SOIC
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 17 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) 8 - - - - - - 150°C TJ Tape & Reel (TR) 2004 - - - Obsolete 1 (Unlimited) - - EAR99 - - - - - - 2W - - - - - - *K2 - - - - - - ENHANCEMENT MODE - - - 2W 2 N-Channel (Dual) - 30m Ω @ 6A, 10V 2.5V @ 1mA - 520pF @ 10V 10.1nC @ 5V - 30V - - 6A 2.5V - 6A - - - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - - - No SVHC ROHS3 Compliant Lead Free
          SP8K2FU6TB
          SP8K2FU6TB

          ROHM Semiconductor
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Diodes Incorporated DMC3021LK4-13
          Mfr. Тип
          DMC3021LK4-13
          Anlielectronics Тип

          		Diodes Incorporated
          MOSFET N/P-CH 30V TO252-4L
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 15 Weeks - - Surface Mount Surface Mount TO-252-5, DPak (4 Leads + Tab), TO-252AD 5 - 3.949996g SILICON 9.4A 6.8A 2 19 ns -55°C~150°C TJ Tape & Reel (TR) 2012 - e3 yes Active 1 (Unlimited) 4 - EAR99 - Matte Tin (Sn) - - HIGH RELIABILITY - 2.7W SINGLE GULL WING 260 - - 40 DMC3021 4 R-PSSO-G4 - - 2 - ENHANCEMENT MODE - - 2.5 ns - N and P-Channel, Common Drain SWITCHING 21m Ω @ 7A, 10V 2.1V @ 250μA - 751pF @ 10V 17.4nC @ 10V 6.6ns - N-CHANNEL AND P-CHANNEL 6.3 ns 6.8A - 20V 6.7A - 30V 40A - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - - No No SVHC ROHS3 Compliant -
            DMC3021LK4-13
            DMC3021LK4-13

            Diodes Incorporated
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Diodes Incorporated DMN61D8LVTQ-7
            Mfr. Тип
            DMN61D8LVTQ-7
            Anlielectronics Тип

            		Diodes Incorporated
            MOSFET 2N-CH 60V 0.63A TSOT26
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 17 Weeks - - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2015 - e3 - Active 1 (Unlimited) - - EAR99 - Matte Tin (Sn) - - - - 820mW - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - - - - - - 820mW 2 N-Channel (Dual) - 1.8 Ω @ 150mA, 5V 2V @ 1mA - 12.9pF @ 12V 0.74nC @ 5V - 60V - - 630mA - - - - - - - - - - - Logic Level Gate - - - - - - - - - - ROHS3 Compliant -
              DMN61D8LVTQ-7
              DMN61D8LVTQ-7

              Diodes Incorporated
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Texas Instruments CSD75301W1015
              Mfr. Тип
              CSD75301W1015
              Anlielectronics Тип

              		Texas Instruments
              MOSFET 2P-CH 20V 1.2A 6DSBGA
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 - - - Surface Mount Surface Mount 6-UFBGA, DSBGA 6 - - SILICON - 2 38 ns -55°C~150°C TJ Tape & Reel (TR) - NexFET™ e1 yes Obsolete 1 (Unlimited) 6 - EAR99 - Tin/Silver/Copper (Sn/Ag/Cu) - - - - 800mW BOTTOM BALL 260 - - - CSD75301 6 - - - - - ENHANCEMENT MODE 800mW - 3 ns - 2 P-Channel (Dual) SWITCHING 100m Ω @ 1A, 4.5V 1V @ 250μA - 195pF @ 10V 2.1nC @ 4.5V 1.7ns 20V - 16 ns 1.2A -700mV 8V - 0.19Ohm 20V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - -700 mV 31 pF - - - - No No SVHC ROHS3 Compliant Lead Free
                CSD75301W1015
                CSD75301W1015

                Texas Instruments
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Diodes Incorporated DMG9933USD-13
                Mfr. Тип
                DMG9933USD-13
                Anlielectronics Тип

                		Diodes Incorporated
                MOSFET 2P-CH 20V 4.6A 8SO
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 15 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) 8 - 73.992255mg SILICON - 2 46.52 ns -55°C~150°C TJ Tape & Reel (TR) 2010 - e3 yes Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - - HIGH RELIABILITY - 1.15W - GULL WING 260 - - 40 - 8 - - - 2 - ENHANCEMENT MODE - - 12.45 ns - 2 P-Channel (Dual) SWITCHING 75m Ω @ 4.8A, 4.5V 1.1V @ 250μA - 608.4pF @ 6V 6.5nC @ 4.5V 10.29ns 20V - 22.19 ns 4.6A - 12V - 0.075Ohm -20V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - - No No SVHC ROHS3 Compliant -
                  DMG9933USD-13
                  DMG9933USD-13

                  Diodes Incorporated
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Texas Instruments CSD87312Q3E
                  Mfr. Тип
                  CSD87312Q3E
                  Anlielectronics Тип

                  		Texas Instruments
                  MOSFET 2N-CH 30V 27A 8VSON
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 6 Weeks ACTIVE (Last Updated: 3 days ago) Gold Surface Mount Surface Mount 8-PowerTDFN 8 - - SILICON - 2 17 ns -55°C~150°C TJ Cut Tape (CT) - NexFET™ e4 yes Active 1 (Unlimited) 7 - EAR99 - - - - AVALANCHE RATED, ULTRA-LOW RESISTANCE - 2.5W - NO LEAD 260 not_compliant - NOT SPECIFIED CSD87312 - - - - - Dual ENHANCEMENT MODE 2.5W - 7.8 ns - 2 N-Channel (Dual) Common Source SWITCHING 33m Ω @ 7A , 8V 1.3V @ 250μA - 1250pF @ 15V 8.2nC @ 4.5V 16ns 30V - 2.8 ns 27A - 10V - - 30V 45A - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - 16 pF - 3.3mm 3.3mm 900μm - - ROHS3 Compliant Contains Lead
                    CSD87312Q3E
                    CSD87312Q3E

                    Texas Instruments
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    ON Semiconductor FDMS3602S
                    Mfr. Тип
                    FDMS3602S
                    Anlielectronics Тип

                    		ON Semiconductor
                    DUAL N CH MOSFET, 25V, 40A, POWER56 - More Details
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 13 Weeks ACTIVE (Last Updated: 2 days ago) - Surface Mount Surface Mount 8-PowerTDFN 8 - 90mg SILICON 15A 26A 2 31 ns -55°C~150°C TJ Tape & Reel (TR) 2006 PowerTrench® e3 yes Active 1 (Unlimited) 6 - EAR99 5.6MOhm Tin (Sn) - - - - 1W - - - - - - - - R-PDSO-N6 - - - - ENHANCEMENT MODE 2.5W DRAIN SOURCE - - 2 N-Channel (Dual) SWITCHING 5.6m Ω @ 15A, 10V 3V @ 250μA - 1680pF @ 13V 27nC @ 10V 4.2ns - - 3.2 ns 26A - 20V 15A - 25V 40A - - - 50 mJ METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - 1.8 V - 1.05mm 5mm 6mm - No No SVHC ROHS3 Compliant Lead Free
                      FDMS3602S
                      FDMS3602S

                      ON Semiconductor
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      ROHM Semiconductor US6J11TR
                      Mfr. Тип
                      US6J11TR
                      Anlielectronics Тип

                      		ROHM Semiconductor
                      MOSFET 2P-CH 12V 1.3A TUMT6
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 16 Weeks - - Surface Mount Surface Mount 6-SMD, Flat Leads 6 - - SILICON - 2 30 ns 150°C TJ Tape & Reel (TR) 2012 - e2 yes Active 1 (Unlimited) 6 - EAR99 - Tin/Copper (Sn/Cu) - - - - 1W - - 260 - - 10 *J11 6 - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - 8 ns 320mW 2 P-Channel (Dual) SWITCHING 260m Ω @ 1.3A, 4.5V 1V @ 1mA - 290pF @ 6V 2.4nC @ 4.5V 10ns 12V - 9 ns 1.3A - 10V 0.0013A - - - - - 12V - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - - No - ROHS3 Compliant Lead Free
                        US6J11TR
                        US6J11TR

                        ROHM Semiconductor
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Diodes Incorporated DMN32D4SDW-7
                        Mfr. Тип
                        DMN32D4SDW-7
                        Anlielectronics Тип

                        		Diodes Incorporated
                        MOSFET 2N-CH 30V 0.65A SOT363
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 16 Weeks - - Surface Mount Surface Mount 6-TSSOP, SC-88, SOT-363 - - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2015 - e3 - Active 1 (Unlimited) - - EAR99 - Matte Tin (Sn) - - - - 290mW - - 260 - - 30 - - - - - - - - - - - 290mW 2 N-Channel (Dual) - 400m Ω @ 250mA, 10V 1.6V @ 250μA - 50pF @ 15V 1.3nC @ 10V - 30V - - 650mA - - - - - - - - - - - Standard - - - - - - - - - - ROHS3 Compliant -
                          DMN32D4SDW-7
                          DMN32D4SDW-7

                          Diodes Incorporated
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          ON Semiconductor NVMFD5C478NLWFT1G
                          Mfr. Тип
                          NVMFD5C478NLWFT1G
                          Anlielectronics Тип

                          		ON Semiconductor
                          40V 14.5 MOHM T8 S08FL DU
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 48 Weeks ACTIVE (Last Updated: 1 week ago) - - Surface Mount 8-PowerTDFN - - - - 10.5A Ta 29A Tc - - -55°C~175°C TJ Tape & Reel (TR) - - e3 yes Active - - - - - Tin (Sn) - - - - - - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - - - - - - 3.1W Ta 23W Tc 2 N-Channel (Dual) - 14.5m Ω @ 7.5A, 10V 2.2V @ 20μA - 420pF @ 25V 8.1nC @ 10V - 40V - - - - - - - - - - - - - - Standard - - - - - - - - - - RoHS Compliant -
                            NVMFD5C478NLWFT1G
                            NVMFD5C478NLWFT1G

                            ON Semiconductor
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Infineon Technologies BSC0925NDATMA1
                            Mfr. Тип
                            BSC0925NDATMA1
                            Anlielectronics Тип

                            		Infineon Technologies
                            Trans MOSFET N-CH 30V 15A 8-Pin TISON EP T/R
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 18 Weeks - Tin Surface Mount Surface Mount 8-PowerTDFN 8 - - SILICON - 2 17 ns -55°C~150°C TJ Tape & Reel (TR) 2013 OptiMOS™ e3 no Active 1 (Unlimited) 6 - EAR99 - - - - - - 2.5W - FLAT NOT SPECIFIED not_compliant - NOT SPECIFIED - 8 R-PDSO-F6 - - - - ENHANCEMENT MODE 2.5W DRAIN SOURCE 4.7 ns - 2 N Channel (Dual Buck Chopper) SWITCHING 5m Ω @ 20A, 10V 2V @ 250μA Halogen Free 1157pF @ 15V 17nC @ 10V 3.8ns 30V - 3 ns 15A - 20V 11A 0.007Ohm - 160A - - 30V 14 mJ METAL-OXIDE SEMICONDUCTOR Standard - - - - - - - - - - ROHS3 Compliant -
                              BSC0925NDATMA1
                              BSC0925NDATMA1

                              Infineon Technologies
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Diodes Incorporated DMC3021LSDQ-13
                              Mfr. Тип
                              DMC3021LSDQ-13
                              Anlielectronics Тип

                              		Diodes Incorporated
                              MOSFET N/P-CH 30V 8.5A/7A 8-SO
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 15 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) 8 - 73.992255mg - 8.5A 7A - 50.1 ns -55°C~150°C TJ Tape & Reel (TR) - - e3 yes Active 1 (Unlimited) - - EAR99 - Matte Tin (Sn) - - - - 2.5W - - NOT SPECIFIED - - NOT SPECIFIED - - - - - 2 - - - - 10.1 ns - N and P-Channel - 21m Ω @ 7A, 10V 2.1V @ 250μA - 767pF @ 10V 16.1nC @ 10V 6.5ns 30V - 22.2 ns 7A - 20V - - -30V - - - - - - Logic Level Gate - - - - - - - - - - ROHS3 Compliant -
                                DMC3021LSDQ-13
                                DMC3021LSDQ-13

                                Diodes Incorporated
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                ON Semiconductor EFC6612R-TF
                                Mfr. Тип
                                EFC6612R-TF
                                Anlielectronics Тип

                                		ON Semiconductor
                                MOSFET 2N-CH 20V 23A EFCP
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - - - Surface Mount Surface Mount 6-SMD, No Lead 6 - - - - - 11.8 ns 150°C TJ Tape & Reel (TR) 1998 - - yes Not For New Designs 1 (Unlimited) - - EAR99 - - - - - - 2.5W - - - - - - - - - - - - - - - - 30 ns - 2 N-Channel (Dual) Common Drain - - - - - 27nC @ 4.5V 640ns - - 92 ns 23A - 12V - - - - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate, 2.5V Drive - - - - - - - - - - ROHS3 Compliant Lead Free
                                  EFC6612R-TF
                                  EFC6612R-TF

                                  ON Semiconductor
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Diodes Incorporated DMN2990UDJ-7
                                  Mfr. Тип
                                  DMN2990UDJ-7
                                  Anlielectronics Тип

                                  		Diodes Incorporated
                                  MOSFET MOSFET BVDSS: 8V-24V SOT963,10K
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 16 Weeks - Tin Surface Mount Surface Mount SOT-963 6 - - SILICON - 2 19 ns -55°C~150°C TJ Tape & Reel (TR) 2011 - e3 yes Active 1 (Unlimited) 6 - EAR99 - - - - HIGH RELIABILITY - 350mW - FLAT 260 - - 40 - 6 - - - - Dual ENHANCEMENT MODE 350mW - 4 ns - 2 N-Channel (Dual) SWITCHING 990m Ω @ 100mA, 4.5V 1V @ 250μA - 27.6pF @ 16V 0.5nC @ 4.5V 3.3ns 20V - 6.4 ns 450mA - 8V 0.33A 0.99Ohm - - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - - No No SVHC ROHS3 Compliant Lead Free
                                    DMN2990UDJ-7
                                    DMN2990UDJ-7

                                    Diodes Incorporated
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Diodes Incorporated DMN601DMK-7
                                    Mfr. Тип
                                    DMN601DMK-7
                                    Anlielectronics Тип

                                    		Diodes Incorporated
                                    MOSFET 2N-CH 60V 0.51A SOT26
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 16 Weeks - - Surface Mount Surface Mount SOT-23-6 6 - - SILICON - 2 15.7 ns -55°C~150°C TJ Tape & Reel (TR) 2017 - e3 yes Active 1 (Unlimited) 6 - EAR99 - Matte Tin (Sn) - - LOW CAPACITANCE 60V 700mW - GULL WING 260 - 305mA 40 DMN601DMK 6 - - - - Dual ENHANCEMENT MODE 980mW - 3.9 ns - 2 N-Channel (Dual) SWITCHING 2.4 Ω @ 200mA, 10V 2.5V @ 1mA - 50pF @ 25V 304nC @ 4.5V 3.4ns - - 9.9 ns 510mA - 20V 0.305A 4Ohm 60V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - 5 pF 1.1mm 3mm 1.6mm - No No SVHC ROHS3 Compliant Lead Free
                                      DMN601DMK-7
                                      DMN601DMK-7

                                      Diodes Incorporated
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      ON Semiconductor FDC6302P
                                      Mfr. Тип
                                      FDC6302P
                                      Anlielectronics Тип

                                      		ON Semiconductor
                                      MOSFET SSOT-6 P-CH -25V
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 10 Weeks ACTIVE (Last Updated: 1 day ago) - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 6 - 36mg SILICON 120mA 2 9 ns -55°C~150°C TJ Tape & Reel (TR) 1997 - e3 yes Active 1 (Unlimited) 6 SMD/SMT EAR99 - Tin (Sn) - - - -25V 900mW - GULL WING - - -120mA - - - - - - - Dual ENHANCEMENT MODE 900mW - 5 ns 700mW 2 P-Channel (Dual) SWITCHING 10 Ω @ 200mA, 4.5V 1.5V @ 250μA - 11pF @ 10V 0.31nC @ 4.5V 8ns 25V - 5 ns -120mA -1V 8V - - -25V - -25V - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - -1 V - 1.12mm 3mm 1.68mm - No No SVHC ROHS3 Compliant Lead Free
                                        FDC6302P
                                        FDC6302P

                                        ON Semiconductor
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        Nexperia USA Inc. BUK9K25-40EX
                                        Mfr. Тип
                                        BUK9K25-40EX
                                        Anlielectronics Тип

                                        		Nexperia USA Inc.
                                        NEXPERIA - BUK9K25-40EX - MOSFET, AEC-Q101, DUAL N-CH, SOT-1205
                                        Сборник данных Сравнение
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                                          		 12 Weeks - - Surface Mount Surface Mount SOT-1205, 8-LFPAK56 8 LFPAK56D - - 18.2A - - -55°C~175°C TJ Tape & Reel (TR) 2013 TrenchMOS™ - - Active 1 (Unlimited) - - - - - 175°C -55°C - - 32W - - - - - - - - - - - - - - - - - 32W 2 N-Channel (Dual) - 24mOhm @ 5A, 10V 2.1V @ 1mA - 701pF @ 25V 6.3nC @ 5V - 40V - - 18.2A - - - - - - - 701pF - - - Logic Level Gate 19mOhm 24 mΩ - - - - - - - - ROHS3 Compliant -
                                          BUK9K25-40EX
                                          BUK9K25-40EX

                                          Nexperia USA Inc.
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

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