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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Number of Pins | Supplier Device Package | Weight | Transistor Element Material | Current - Continuous Drain (Id) @ 25℃ | Number of Elements | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Resistance | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Voltage - Rated DC | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Current Rating | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Number of Channels | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | Power - Max | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Fall Time (Typ) | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | Dual Supply Voltage | Input Capacitance | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Max Junction Temperature (Tj) | FET Feature | Drain to Source Resistance | Rds On Max | Nominal Vgs | Feedback Cap-Max (Crss) | Height | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипFDPC4044Anlielectronics Тип | ON Semiconductor |
MOSFET Common Drain N-Chan Power Trench MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | ACTIVE (Last Updated: 3 days ago) | - | Surface Mount | Surface Mount | 8-PowerWDFN | 8 | - | 123.733334mg | SILICON | - | 2 | 32 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | Tin (Sn) | - | - | - | - | 2.7W | - | - | - | - | - | - | - | - | S-PDSO-N6 | - | - | - | Single | ENHANCEMENT MODE | 2.7W | SOURCE | 8.5 ns | 1W | 2 N-Channel (Dual) Common Drain | SWITCHING | 4.3m Ω @ 27A, 10V | 3V @ 250μA | 3215pF @ 15V | 49nC @ 10V | 10ns | 30V | - | 10 ns | 27A | 20V | - | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | 95 pF | 750μm | 3.4mm | 3.4mm | No | - | ROHS3 Compliant | - | ||
| FDPC4044 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипQS8K13TCRAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2N-CH 30V 6A TSMT8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 20 Weeks | - | - | Surface Mount | Surface Mount | 8-SMD, Flat Lead | - | - | - | SILICON | - | 2 | - | 150°C TJ | Cut Tape (CT) | 2012 | - | e2 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | - | Tin/Copper (Sn/Cu) | - | - | - | - | 550mW | - | - | 260 | - | 10 | - | 8 | - | R-PDSO-F8 | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | 550mW | 2 N-Channel (Dual) | SWITCHING | 28m Ω @ 6A, 10V | 2.5V @ 1mA | 390pF @ 10V | 20nC @ 10V | - | 30V | - | - | 6A | - | - | 6A | 0.039Ohm | - | 18A | - | - | 30V | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| QS8K13TCR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMP2200UDW-7Anlielectronics Тип
IN STOCK: 1000000
| Diodes Incorporated |
MOSFET 2P-CH 20V 0.9A SOT363
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 15 Weeks | - | Tin | Surface Mount | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6 | - | - | SILICON | - | 2 | 24.4 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | - | e3 | - | Active | 1 (Unlimited) | 6 | - | EAR99 | - | - | - | - | - | - | 450mW | - | GULL WING | 260 | - | 30 | - | - | - | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | DUAL GATE, ENHANCEMENT MODE | - | - | 9.8 ns | - | 2 P-Channel (Dual) | SWITCHING | 260m Ω @ 880mA, 4.5V | 1.2V @ 250μA | 184pF @ 10V | 2.1nC @ 4.5V | 88ns | 20V | - | 45 ns | 900mA | 8V | - | 0.9A | - | - | - | - | - | 20V | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| DMP2200UDW-7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDMP2200UDW-13Anlielectronics Тип | Diodes Incorporated |
MOSFET 2P-CH 20V 0.9A SOT363
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 15 Weeks | - | - | Surface Mount | Surface Mount | 6-TSSOP, SC-88, SOT-363 | - | - | - | SILICON | - | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | - | e3 | - | Active | 1 (Unlimited) | 6 | - | EAR99 | - | Matte Tin (Sn) | - | - | - | - | 450mW | - | GULL WING | NOT SPECIFIED | - | NOT SPECIFIED | - | - | - | R-PDSO-G6 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | DUAL GATE, ENHANCEMENT MODE | - | - | - | 450mW | 2 P-Channel (Dual) | SWITCHING | 260m Ω @ 880mA, 4.5V | 1.2V @ 250μA | 184pF @ 10V | 2.1nC @ 4.5V | - | 20V | - | - | 900mA | - | - | 0.9A | 0.26Ohm | - | - | - | - | 20V | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| DMP2200UDW-13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAO4806Anlielectronics Тип | Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 20V 9.4A 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | - | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | 2W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 N-Channel (Dual) | - | 14m Ω @ 9.4A, 10V | 1V @ 250μA | 1810pF @ 10V | 17.9nC @ 4.5V | - | 20V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| AO4806 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSP8K2TBAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2N-CH 30V 6A 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | - | - | SILICON | - | 2 | 36 ns | 150°C TJ | Tape & Reel (TR) | 2004 | - | e2 | - | Not For New Designs | 1 (Unlimited) | 8 | - | EAR99 | - | TIN COPPER | - | - | - | 30V | 2W | - | GULL WING | 260 | 6A | 10 | *K2 | 8 | - | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | 9 ns | - | 2 N-Channel (Dual) | SWITCHING | 30m Ω @ 6A, 10V | 2.5V @ 1mA | 520pF @ 10V | 10.1nC @ 5V | 21ns | - | - | 13 ns | 6A | 20V | - | 6A | 0.047Ohm | - | 24A | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| SP8K2TB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMN3016LDN-7Anlielectronics Тип | Diodes Incorporated |
MOSFET 2N-CH 30V 7.3A 8VDFN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 22 Weeks | - | - | Surface Mount | Surface Mount | 8-PowerWDFN | 8 | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | - | - | - | Active | 1 (Unlimited) | - | - | EAR99 | - | - | - | - | - | - | 1.1W | - | - | NOT SPECIFIED | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | 1.1W | 2 N-Channel (Dual) | - | 20m Ω @ 11A, 10V | 2V @ 250μA | 1415pF @ 15V | 25.1nC @ 10V | - | 30V | - | - | 7.3A | - | - | - | - | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| DMN3016LDN-7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBSZ0910NDXTMA1Anlielectronics Тип | Infineon Technologies |
DIFFERENTIATED MOSFETS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | - | - | - | Surface Mount | 8-PowerVDFN | - | - | - | - | 9.5A Ta 25A Tc | - | - | -55°C~150°C TJ | Tape & Reel (TR) | - | OptiMOS™ | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | - | - | - | NOT SPECIFIED | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | 1.9W Ta 31W Tc | 2 N-Channel (Dual) | - | 9.5m Ω @ 9A, 10V | 2V @ 250μA | 800pF @ 15V | 5.6nC @ 4.5V | - | 30V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Logic Level Gate, 4.5V Drive | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| BSZ0910NDXTMA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMN1002UCA6-7Anlielectronics Тип | Diodes Incorporated |
MOSFETN-CHAN 12V X4-DSN3118-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 17 Weeks | - | - | - | Surface Mount | 6-SMD, No Lead | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | - | e4 | - | Active | 1 (Unlimited) | - | - | EAR99 | - | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | - | - | - | - | - | NOT SPECIFIED | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | 1.1W | 2 N-Channel (Dual) Common Drain | - | - | - | - | 68.6nC @ 4V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Standard | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| DMN1002UCA6-7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAO4840EAnlielectronics Тип | Alpha & Omega Semiconductor Inc. |
MOSFET 2 N-CHANNEL 40V 6A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | - | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | - | - | - | 6A Ta | - | - | -55°C~150°C TJ | Tape & Reel (TR) | - | AlphaMOS | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2W | 2 N-Channel (Dual) | - | 28m Ω @ 6A, 10V | 2.6V @ 250μA | 520pF @ 20V | 10nC @ 4.5V | - | 40V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Standard | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| AO4840E | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипPMDPB80XP,115Anlielectronics Тип | Nexperia USA Inc. |
MOSFET 2P-CH 20V 2.7A HUSON6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | - | Surface Mount | 6-UDFN Exposed Pad | 6 | - | - | - | - | - | 120 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | - | e3 | - | Active | 1 (Unlimited) | - | - | - | - | Tin (Sn) | - | - | - | - | 485mW | - | - | - | - | - | - | 6 | - | - | - | - | 2 | Dual | - | - | - | 6 ns | - | 2 P-Channel (Dual) | - | 102m Ω @ 2.7A, 4.5V | 1V @ 250μA | 550pF @ 10V | 8.6nC @ 4.5V | 14ns | 20V | - | 50 ns | 2.7A | -600mV | -20V | - | - | -20V | - | - | - | - | - | - | - | Logic Level Gate, 1.8V Drive | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | - | ||
| PMDPB80XP,115 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDW2503NAnlielectronics Тип | ON Semiconductor |
MOSFET 2N-CH 20V 5.5A 8TSSOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | Surface Mount | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8-TSSOP | - | - | 5.5A | 2 | 24 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2000 | PowerTrench® | - | - | Obsolete | 1 (Unlimited) | - | SMD/SMT | - | 21MOhm | - | 150°C | -55°C | - | 20V | 600mW | - | - | - | 5.5A | - | - | - | - | - | - | - | - | - | - | 1W | - | 8 ns | 600mW | 2 N-Channel (Dual) | - | 21mOhm @ 5.5A, 4.5V | 1.5V @ 250μA | 1082pF @ 10V | 17nC @ 4.5V | 8ns | 20V | - | 8 ns | 5.5A | 12V | - | - | - | 20V | - | 20V | 1.082nF | - | - | - | - | Logic Level Gate | 17mOhm | 21 mΩ | 800 mV | - | 1mm | 3mm | 4.4mm | No | No SVHC | RoHS Compliant | Lead Free | ||
| FDW2503N | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBUK9K12-60EXAnlielectronics Тип | Nexperia USA Inc. |
MOSFET 2N-CH 60V 35A 56LFPAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | SOT-1205, 8-LFPAK56 | - | - | - | SILICON | - | 2 | - | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | - | - | - | Active | 1 (Unlimited) | 6 | - | - | - | - | - | - | - | - | 68W | - | GULL WING | - | - | - | - | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | 68W | 2 N-Channel (Dual) | SWITCHING | 10.7m Ω @ 15A, 10V | 2.1V @ 1mA | 3470pF @ 25V | 24.5nC @ 5V | - | 60V | - | - | 35A | - | - | - | 0.0115Ohm | - | 204A | - | - | 60V | 118 mJ | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| BUK9K12-60EX | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAO4882Anlielectronics Тип | Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 40V 8A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | - | - | - | - | 2 | 15 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | - | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | 2W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2W | - | 4 ns | - | 2 N-Channel (Dual) | - | 19m Ω @ 8A, 10V | 2.4V @ 250μA | 415pF @ 20V | 12nC @ 10V | - | 40V | - | - | 8A | 20V | - | - | - | 40V | - | - | - | - | - | - | 150°C | Logic Level Gate | - | - | - | - | 1.75mm | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| AO4882 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипZXMC6A09DN8TAAnlielectronics Тип | Diodes Incorporated |
MOSFET N/P-CH 60V 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 17 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | - | 73.992255mg | SILICON | 3.9A 3.7A | 2 | 55 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | - | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | 55mOhm | Matte Tin (Sn) | - | - | LOW THRESHOLD | - | 2.1W | DUAL | GULL WING | 260 | 5.1A | 40 | - | 8 | - | - | - | - | 2 | - | ENHANCEMENT MODE | 2.1W | - | 4.6 ns | 1.8W | N and P-Channel | SWITCHING | 45m Ω @ 8.2A, 10V | 1V @ 250μA (Min) | 1407pF @ 40V | 24.2nC @ 10V | 5.8ns | - | N-CHANNEL AND P-CHANNEL | 23 ns | 5.1A | 20V | - | 3.9A | - | 60V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | 1.5mm | 5mm | 4mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| ZXMC6A09DN8TA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAO4629Anlielectronics Тип | Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 30V 6A/5.5A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | - | - | SILICON | 6A 5.5A | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | - | - | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | - | - | - | - | - | - | 2W | DUAL | GULL WING | - | - | - | - | 8 | - | - | - | - | - | - | ENHANCEMENT MODE | 2W | - | - | - | N and P-Channel, Common Drain | SWITCHING | 30m Ω @ 6A, 10V | 2.4V @ 250μA | 310pF @ 15V | 6.3nC @ 10V | - | 30V | N-CHANNEL AND P-CHANNEL | - | 5.5A | 20V | - | 6A | 0.03Ohm | - | - | - | - | 30V | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | 50 pF | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| AO4629 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBUK7K13-60EXAnlielectronics Тип | Nexperia USA Inc. |
MOSFET 2N-CH 60V 40A LFPAK56
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | SOT-1205, 8-LFPAK56 | 8 | - | - | SILICON | - | 2 | - | -55°C~175°C TJ | Tape & Reel (TR) | 2015 | - | - | - | Active | 1 (Unlimited) | 6 | - | - | - | - | - | - | - | - | 64W | - | GULL WING | NOT SPECIFIED | - | NOT SPECIFIED | - | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | 64W | 2 N-Channel (Dual) | SWITCHING | 10m Ω @ 10A, 10V | 4V @ 1mA | 2163pF @ 25V | 30.1nC @ 10V | - | 60V | - | - | 40A | - | - | - | 0.01Ohm | - | 213A | - | - | 60V | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| BUK7K13-60EX | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF7342QTRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET 2P-CH 55V 3.4A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 30 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | - | - | - | 3.4A | 2 | 43 ns | - | Cut Tape (CT) | 2014 | HEXFET® | - | - | Obsolete | 1 (Unlimited) | - | - | EAR99 | - | - | 150°C | -55°C | - | - | 2W | - | - | - | - | - | IRF7342QPBF | - | - | - | - | - | - | - | - | 2W | - | 14 ns | - | 2 P-Channel (Dual) | - | 105m Ω @ 3.4A, 10V | 1V @ 250μA | 690pF @ 25V | 38nC @ 10V | 10ns | 55V | - | 22 ns | -3.4A | 20V | - | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | 1.4986mm | 4.9784mm | 3.9878mm | No | - | ROHS3 Compliant | - | ||
| IRF7342QTRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSTL20DN10F7Anlielectronics Тип | STMicroelectronics |
MOSFET POWER MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | ACTIVE (Last Updated: 8 months ago) | - | Surface Mount | Surface Mount | 8-PowerVDFN | 8 | - | - | SILICON | - | 2 | 11 ns | -55°C~150°C TJ | Cut Tape (CT) | - | DeepGATE™, STripFET™ VII | - | - | Active | 1 (Unlimited) | 6 | - | EAR99 | 65mOhm | - | - | - | - | - | 62.5W | - | FLAT | NOT SPECIFIED | - | NOT SPECIFIED | STL20 | - | - | R-PDSO-F6 | - | - | 2 | Dual | ENHANCEMENT MODE | - | DRAIN | 6.3 ns | - | 2 N-Channel (Dual) | SWITCHING | 67m Ω @ 2.5A, 10V | 4.5V @ 250μA | 408pF @ 50V | 7.8nC @ 10V | 3ns | 100V | - | 4 ns | 20A | 20V | - | - | - | 100V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| STL20DN10F7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNTMFD4902NFT3GAnlielectronics Тип | ON Semiconductor |
MOSFET 2N-CH 30V 8DFN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | Tin | Surface Mount | Surface Mount | 8-PowerTDFN | 8 | - | - | SILICON | 10.3A 13.3A | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | - | e3 | - | Active | 1 (Unlimited) | 8 | - | EAR99 | - | - | - | - | - | - | 1.16W | - | FLAT | - | - | - | - | 10 | - | - | - | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN SOURCE | - | 1.1W 1.16W | 2 N-Channel (Dual), Schottky | SWITCHING | 6.5m Ω @ 10A, 10V | 2.2V @ 250μA | 1150pF @ 15V | 9.7nC @ 4.5V | - | 30V | - | - | 13.3A | 20V | - | 13.5A | 0.01Ohm | - | 60A | - | - | 30V | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| NTMFD4902NFT3G |
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