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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Mount Mounting Type Package / Case Number of Pins Supplier Device Package Weight Transistor Element Material Brand Channel Mode Continuous Drain Current Current - Continuous Drain (Id) @ 25℃ Drain-Source On-Volt Factory Pack QuantityFactory Pack Quantity Gate-Source Voltage (Max) Manufacturer Mfr Mounting Number of Elements Operating Temp Range Operating Temperature Classification Package Package Type Product Status Rad Hardened RoHS Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Type Resistance Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature Subcategory Voltage - Rated DC Max Power Dissipation Technology Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Qualification Status Polarity Configuration Number of Channels Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max FET Type Transistor Application Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Drain to Source Voltage (Vdss) Fall Time (Typ) Product Type Continuous Drain Current (ID) Threshold Voltage Gate to Source Voltage (Vgs) Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Dual Supply Voltage Input Capacitance DS Breakdown Voltage-Min FET Technology Recovery Time Max Junction Temperature (Tj) FET Feature Drain to Source Resistance Rds On Max Nominal Vgs Feedback Cap-Max (Crss) Min Breakdown Voltage Product Category Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
Diodes Incorporated DMN2011UFX-7
Mfr. Тип
DMN2011UFX-7
Anlielectronics Тип

Diodes Incorporated
MOSFET 2N-CH 20V 12.2A DFN2050-4
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 23 Weeks - Surface Mount Surface Mount 4-VFDFN Exposed Pad - - - - - - - 12.2A Ta - - - - - - - - - - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2013 - e4 - Active 1 (Unlimited) - - EAR99 - - Nickel/Palladium/Gold (Ni/Pd/Au) - - - - - 2.1W - - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - - - - - - - - - 2 N-Channel (Dual) - 9.5m Ω @ 10A, 4.5V 1V @ 250μA 2248pF @ 10V 56nC @ 10V - 20V - - 12.2A - - - - - - - - - - - Standard - - - - - - - - - - - ROHS3 Compliant -
    DMN2011UFX-7
    DMN2011UFX-7

    Diodes Incorporated
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Diodes Incorporated 2N7002V-7
    Mfr. Тип
    2N7002V-7
    Anlielectronics Тип

    		Diodes Incorporated
    MOSFET 2N-CH 60V 0.28A SOT-563
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - - Surface Mount Surface Mount SOT-563, SOT-666 6 - 3.005049mg SILICON - - - - - - - - - - 2 - - - - - - - 20 ns -55°C~150°C TJ Tape & Reel (TR) 2004 - e3 yes Obsolete 1 (Unlimited) 6 - EAR99 - 7.5Ohm Matte Tin (Sn) - - HIGH RELIABILITY - 60V 150mW - - FLAT 260 - 280mA 40 - 6 - - - - - 2 Dual ENHANCEMENT MODE 150mW - 20 ns - 2 N-Channel (Dual) SWITCHING 7.5 Ω @ 50mA, 5V 2.5V @ 250μA 50pF @ 25V - - - - - 280mA - 20V - - - - - - METAL-OXIDE SEMICONDUCTOR - - Standard - - - 5 pF 60V - 600μm 1.6mm 1.2mm No - ROHS3 Compliant Lead Free
      2N7002V-7
      2N7002V-7

      Diodes Incorporated
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      ON Semiconductor EFC6605R-TR
      Mfr. Тип
      EFC6605R-TR
      Anlielectronics Тип

      		ON Semiconductor
      MOSFET NCH NCH 10A 24V 2.5V DRIV
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 7 Weeks ACTIVE (Last Updated: 5 days ago) Surface Mount Surface Mount 6-SMD, No Lead 6 - 65.99769mg - - - - - - - - - - - - - - - - - - - 44.4 μs 150°C TJ Tape & Reel (TR) - - - yes Not For New Designs 1 (Unlimited) - - EAR99 - - - - - - - - 1.6W - - - - - - - - - - - - - - 2 - - - - 154 ns - 2 N-Channel (Dual) - - - - 19.8nC @ 4.5V 678ns 20V 60.8 μs - 10A - 10V - - - - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate, 2.5V Drive 13.3mOhm - - - - - - - - - - ROHS3 Compliant Lead Free
        EFC6605R-TR
        EFC6605R-TR

        ON Semiconductor
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        ON Semiconductor NTMFD4C85NT1G
        Mfr. Тип
        NTMFD4C85NT1G
        Anlielectronics Тип

        		ON Semiconductor
        MOSFET NFET SO8FL 30V 40A 1.2MOH
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 24 Weeks - Surface Mount Surface Mount 8-PowerTDFN 8 - - - - - - 15.4A 29.7A - - - - - - - - - - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2014 - - yes Obsolete 1 (Unlimited) - - - - - - - - - - - 1.13W - - - - - - - - - - - - - - - - - - - - - 2 N-Channel (Dual) Asymmetrical - 3m Ω @ 20A, 10V 2.1V @ 250μA 1960pF @ 15V 32nC @ 10V - 30V - - 29.7A - - - - - - - - - - - Standard - - - - - - - - - - - RoHS Compliant Lead Free
          NTMFD4C85NT1G
          NTMFD4C85NT1G

          ON Semiconductor
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Diodes Incorporated DMN2040LTS-13
          Mfr. Тип
          DMN2040LTS-13
          Anlielectronics Тип

          		Diodes Incorporated
          MOSFET 2N-CH 20V 6.7A 8TSSOP
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 24 Weeks - Surface Mount Surface Mount 8-TSSOP (0.173, 4.40mm Width) 8 - 157.991892mg SILICON - - - 6.7A Ta - - - - - - 2 - - - - - - - 19.8 ns -55°C~150°C TJ Tape & Reel (TR) 2009 Automotive, AEC-Q101 e3 yes Active 1 (Unlimited) 8 - EAR99 - - Matte Tin (Sn) - - LOW THERSHOLD - - 890mW - - GULL WING 260 - - 40 - 8 - - - - - - - ENHANCEMENT MODE 890mW - 5.2 ns - 2 N-Channel (Dual) Common Drain SWITCHING 26m Ω @ 6A, 4.5V 1.2V @ 250μA 570pF @ 10V 5.2nC @ 4.5V 13.5ns - 6.1 ns - 6.7A - 12V - - 20V - - - METAL-OXIDE SEMICONDUCTOR - - Standard - - - - - - 1.025mm 4.5mm 3.1mm No No SVHC ROHS3 Compliant -
            DMN2040LTS-13
            DMN2040LTS-13

            Diodes Incorporated
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Texas Instruments CSD75211W1723
            Mfr. Тип
            CSD75211W1723
            Anlielectronics Тип

            		Texas Instruments
            MOSFET Dual P-Channel Nex FET Power MOSFET
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 - - Surface Mount Surface Mount 12-UFBGA, DSBGA 12 - - SILICON - - - - - - - - - - 2 - - - - - - - 9.1 ns -55°C~150°C TJ Tape & Reel (TR) - NexFET™ e1 no Obsolete 1 (Unlimited) 12 - EAR99 - - Tin/Silver/Copper (Sn/Ag/Cu) - - - - - 1.5W - BOTTOM BALL 260 - - - CSD75211 12 - - - - - - Dual ENHANCEMENT MODE 1.5W - 3.7 ns - 2 P-Channel (Dual) SWITCHING 40m Ω @ 2A, 4.5V 1.1V @ 250μA 600pF @ 10V 5.9nC @ 4.5V 4.1ns 20V 1.6 ns - 4.5A -700mV 8V - 0.07Ohm 20V - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - -700 mV - - - - - - No No SVHC ROHS3 Compliant Contains Lead
              CSD75211W1723
              CSD75211W1723

              Texas Instruments
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              ON Semiconductor NDS8858H
              Mfr. Тип
              NDS8858H
              Anlielectronics Тип

              		ON Semiconductor
              MOSFET CMOSFET Half Bridge
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) 8 - 230.4mg - - - - 6.3A 4.8A - - - - - - 2 - - - - - - - 40 ns -55°C~150°C TJ Tape & Reel (TR) - - - - Obsolete 1 (Unlimited) - - - - - - - - - - - 1W - - - - - 4.8A - - - - - - - - - - - 2.5W - - - N and P-Channel - 35m Ω @ 4.8A, 10V 2.8V @ 250μA 720pF @ 15V 30nC @ 10V 20ns - 19 ns - 4.8A - 20V - - 30V - - - - - - Logic Level Gate - - - - - - - - - No - RoHS Compliant Lead Free
                NDS8858H
                NDS8858H

                ON Semiconductor
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                ON Semiconductor FDG6313N
                Mfr. Тип
                FDG6313N
                Anlielectronics Тип

                		ON Semiconductor
                MOSFET 2N-CH 25V 0.5A SC70-6
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - - Surface Mount Surface Mount 6-TSSOP, SC-88, SOT-363 6 SC-88 (SC-70-6) - - - - - 500mA - - - - - - 2 - - - - - - - 17 ns -55°C~150°C TJ Tape & Reel (TR) 2002 - - - Obsolete 1 (Unlimited) - - - - - - 150°C -55°C - - 25V 300mW - - - - - 500mA - - - - - - - - - Dual - 300mW - - 300mW 2 N-Channel (Dual) - 450mOhm @ 500mA, 4.5V 1.5V @ 250μA 50pF @ 10V 2.3nC @ 4.5V 8.5ns 25V 8.5 ns - 500mA - 8V - - 25V - 50pF - - - - Logic Level Gate 340mOhm 450 mΩ - - - - - - - - - RoHS Compliant Lead Free
                  FDG6313N
                  FDG6313N

                  ON Semiconductor
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  ON Semiconductor NDS9959
                  Mfr. Тип
                  NDS9959
                  Anlielectronics Тип

                  		ON Semiconductor
                  MOSFET 2N-CH 50V 2A 8-SOIC
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) 8 - 230.4mg - - - - - - - - - - - 2 - - - - - - - 9 ns -55°C~150°C TJ Tape & Reel (TR) 1998 - - - Obsolete 1 (Unlimited) - - - - - - - - - - 50V 900mW - - - - - 2A - - - - - - - - - Dual - 2W - - - 2 N-Channel (Dual) - 300m Ω @ 1.5A, 10V 4V @ 250μA 250pF @ 25V 15nC @ 10V 8ns - 11 ns - 2A - 20V - - 50V - - - - - - Standard - - - - - - - - - - - RoHS Compliant Lead Free
                    NDS9959
                    NDS9959

                    ON Semiconductor
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Texas Instruments CSD75205W1015
                    Mfr. Тип
                    CSD75205W1015
                    Anlielectronics Тип

                    		Texas Instruments
                    DUAL P CH POWER MOSFET, -20V, -1.2A, DSBGA-6 - More Details
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 - - Surface Mount Surface Mount 6-UFBGA, DSBGA 6 - - SILICON - - - - - - - - - - 2 - - - - - - - 32 ns -55°C~150°C TJ Tape & Reel (TR) - NexFET™ - no Obsolete 1 (Unlimited) 6 - EAR99 - - - - - - - - 750mW - BOTTOM BALL NOT SPECIFIED - - NOT SPECIFIED CSD75205 6 - - Not Qualified - - - Dual ENHANCEMENT MODE 750mW - 6.3 ns - 2 P-Channel (Dual) SWITCHING 120m Ω @ 1A, 4.5V 850mV @ 250μA 265pF @ 10V 2.2nC @ 4.5V 5.3ns 20V 17 ns - 1.2A -650mV -6V - 0.18Ohm -20V - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - - 33 pF - - - - - - No SVHC ROHS3 Compliant Contains Lead
                      CSD75205W1015
                      CSD75205W1015

                      Texas Instruments
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Renesas Electronics America Inc 2SK1284-Z-E1-AZ
                      Mfr. Тип
                      2SK1284-Z-E1-AZ
                      Anlielectronics Тип

                      		Renesas Electronics America Inc
                      SMALL SIGNAL MOSFET
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 - - - - - - - - - - - - - - - - - Renesas Electronics America Inc - - - - Bulk - Active - - - - - - * - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                        2SK1284-Z-E1-AZ
                        2SK1284-Z-E1-AZ

                        Renesas Electronics America Inc
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        ON Semiconductor NDS8958
                        Mfr. Тип
                        NDS8958
                        Anlielectronics Тип

                        		ON Semiconductor
                        MOSFET N/P-CH 30V 5.3A/4A 8SOIC
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) 8 - 230.4mg - - - - 5.3A 4A - - - - - - 2 - - - - - - - 40 ns -55°C~150°C TJ Tape & Reel (TR) - - - - Obsolete 1 (Unlimited) - - - - 50mOhm - - - - - - 900mW - - - - - 2.9A - - - - - - - - - Dual - 2W - - - N and P-Channel - 35m Ω @ 5.3A, 10V 2.8V @ 250μA 720pF @ 15V 30nC @ 10V 20ns - 19 ns - 4A 1.6V 20V - - 30V - - - - - - Logic Level Gate - - 1.6 V - - - - - - - No SVHC RoHS Compliant Lead Free
                          NDS8958
                          NDS8958

                          ON Semiconductor
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Rohm Semiconductor SP8K80TB1
                          Mfr. Тип
                          SP8K80TB1
                          Anlielectronics Тип

                          		Rohm Semiconductor
                          10V DRIVE NCH NCH MOSFET: COMPLE
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 - - - Surface Mount 8-SOIC (0.154", 3.90mm Width) - 8-SOP - - ROHM Semiconductor Enhancement 0.5(A) 500mA (Ta) 500(V) 2500 ±30(V) ROHM Semiconductor Rohm Semiconductor Surface Mount 2 -55C to 150C Military - SOP Active No Details - - Tape and Reel - - - - - - - - - Power MOSFET - - - - - MOSFETs - - Si - - - - - - - 8 - - - N - - - - 2(W) - - 2W (Ta) 2 N-Channel (Dual) - 11.7Ohm @ 250mA, 10V 5V @ 1mA 23.5pF @ 25V 3.8nC @ 10V - 500V - MOSFET - - - - - - - - - - - - Standard - - - - - MOSFET - - - - - - -
                            SP8K80TB1
                            SP8K80TB1

                            Rohm Semiconductor
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Infineon Technologies IRLHS6376TR2PBF
                            Mfr. Тип
                            IRLHS6376TR2PBF
                            Anlielectronics Тип

                            		Infineon Technologies
                            MOSFET 2N-CH 30V 3.6A PQFN
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - - Surface Mount Surface Mount 6-VDFN Exposed Pad 6 6-PQFN (2x2) - - - - - 3.6A - - - - - - - - - - - - - - 11 ns - Cut Tape (CT) 2009 HEXFET® - - Obsolete 1 (Unlimited) - - - - 63MOhm - 150°C -55°C - - - 1.5W - - - - - - - IRLHS6376 - - - - - - - Dual - 6.6W - 4.4 ns 1.5W 2 N-Channel (Dual) - 63mOhm @ 3.4A, 4.5V 1.1V @ 10μA 270pF @ 25V 2.8nC @ 4.5V 11ns 30V 9.4 ns - 3.6A 800mV 12V - - 30V - 270pF - - 12 ns - Logic Level Gate 63mOhm 63 mΩ 800 mV - - - 950μm 2.1mm 2.1mm No No SVHC RoHS Compliant Lead Free
                              IRLHS6376TR2PBF
                              IRLHS6376TR2PBF

                              Infineon Technologies
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Diodes Incorporated DMG8822UTS-13
                              Mfr. Тип
                              DMG8822UTS-13
                              Anlielectronics Тип

                              		Diodes Incorporated
                              MOSFET 2N-CH 20V 4.9A 8TSSOP
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 20 Weeks - Surface Mount Surface Mount 8-TSSOP (0.173, 4.40mm Width) 8 - - SILICON - - - 4.9A Ta - - - - - - 2 - - - - - - - 38.6 ns -55°C~150°C TJ Tape & Reel (TR) 2009 Automotive, AEC-Q101 e3 yes Active 1 (Unlimited) 8 - EAR99 - - Matte Tin (Sn) - - HIGH RELIABILITY - - 870mW - - GULL WING 260 - - 40 - 8 - - - - - 2 - ENHANCEMENT MODE - - 7.8 ns - 2 N-Channel (Dual) Common Drain SWITCHING 25m Ω @ 8.2A, 4.5V 900mV @ 250μA 841pF @ 10V 9.6nC @ 4.5V 21.1ns - 10.1 ns - 4.9A - 8V - - 20V - - - METAL-OXIDE SEMICONDUCTOR - - Standard - - - - - - - - - No No SVHC ROHS3 Compliant Lead Free
                                DMG8822UTS-13
                                DMG8822UTS-13

                                Diodes Incorporated
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                ON Semiconductor FDW2511NZ
                                Mfr. Тип
                                FDW2511NZ
                                Anlielectronics Тип

                                		ON Semiconductor
                                MOSFET 2N-CH 20V 7.1A 8TSSOP
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - - Surface Mount Surface Mount 8-TSSOP (0.173, 4.40mm Width) 8 8-TSSOP - - - - - 7.1A - - - - - - 2 - - - - - - - 41 ns -55°C~150°C TJ Tape & Reel (TR) 2004 PowerTrench® - - Obsolete 1 (Unlimited) - - - - - - 150°C -55°C - - 20V 1.6W - - - - - 7.1A - - - - - - - - - - - 1.6W - - 1.6W 2 N-Channel (Dual) Common Drain - 20mOhm @ 7.1A, 4.5V 1.5V @ 250μA 1000pF @ 10V 17.3nC @ 4.5V 84ns 20V 84 ns - 7.1A 800mV 12V - - 20V - 1nF - - - - Logic Level Gate 20mOhm 20 mΩ - - - - - - - - No SVHC RoHS Compliant Lead Free
                                  FDW2511NZ
                                  FDW2511NZ

                                  ON Semiconductor
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  ROHM Semiconductor SP8K3FU6TB
                                  Mfr. Тип
                                  SP8K3FU6TB
                                  Anlielectronics Тип

                                  		ROHM Semiconductor
                                  MOSFET 2N-CH 30V 7A 8SOIC
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 17 Weeks - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) 8 - - - - - - - - - - - - - - - - - - - - - - 150°C TJ Tape & Reel (TR) 2004 - - - Obsolete 1 (Unlimited) - SMD/SMT EAR99 - - - - - - - - 2W - - - - - - - *K3 - - - - - - - Dual ENHANCEMENT MODE 2W - - - 2 N-Channel (Dual) - 24m Ω @ 7A, 10V 2.5V @ 1mA 600pF @ 10V 11.8nC @ 5V - 30V - - 7A 2.5V - 7A - - 30V - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - 2.5 V - - - - - - - No SVHC ROHS3 Compliant Lead Free
                                    SP8K3FU6TB
                                    SP8K3FU6TB

                                    ROHM Semiconductor
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Diodes Incorporated DMN2050LFDB-7
                                    Mfr. Тип
                                    DMN2050LFDB-7
                                    Anlielectronics Тип

                                    		Diodes Incorporated
                                    MOSFET 2N-CH 20V 3.3A 6UDFN
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 20 Weeks - Surface Mount Surface Mount 6-UDFN Exposed Pad - - - SILICON - - - - - - - - - - 2 - - - - - - - 25 ns -55°C~150°C TJ Tape & Reel (TR) 2013 - e4 - Active 1 (Unlimited) 6 - EAR99 - - Nickel/Palladium/Gold (Ni/Pd/Au) - - HIGH RELIABILITY - - 730mW - - - 260 - - 30 - - AEC-Q101 S-PDSO-N6 - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - DRAIN 5 ns - 2 N-Channel (Dual) SWITCHING 45m Ω @ 5A, 4.5V 1V @ 250μA 389pF @ 10V 12nC @ 10V 8ns 20V 8 ns - 3.3A - 12V 4.5A 0.045Ohm - - - 20V METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - - - - - - - - No - ROHS3 Compliant -
                                      DMN2050LFDB-7
                                      DMN2050LFDB-7

                                      Diodes Incorporated
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      ON Semiconductor FDMD8260L
                                      Mfr. Тип
                                      FDMD8260L
                                      Anlielectronics Тип

                                      		ON Semiconductor
                                      MOSFET 2N-CH 60V 6-MLP
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 12 Weeks ACTIVE (Last Updated: 1 day ago) Surface Mount Surface Mount 12-PowerWDFN 12 - 82.3188mg - - - - - - - - - - - - - - - - - - - 47 ns -55°C~150°C TJ Tape & Reel (TR) - PowerTrench® e3 yes Active 1 (Unlimited) - - EAR99 - - Tin (Sn) - - - - - 1W - - - 260 not_compliant - NOT SPECIFIED - - - - - - - 2 Dual - 1W - 12 ns - 2 N-Channel (Dual) - 5.8m Ω @ 15A, 10V 3V @ 250μA 5245pF @ 30V 68nC @ 10V - 60V - - 15A - 20V 64A - 60V - - - METAL-OXIDE SEMICONDUCTOR - 150°C Standard - - - - - - 800μm - - - - ROHS3 Compliant -
                                        FDMD8260L
                                        FDMD8260L

                                        ON Semiconductor
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        ROHM Semiconductor SM6K2T110
                                        Mfr. Тип
                                        SM6K2T110
                                        Anlielectronics Тип

                                        		ROHM Semiconductor
                                        MOSFET 2N-CH 60V 0.2A SOT-457
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 - - Surface Mount Surface Mount SC-74, SOT-457 6 - - SILICON - - - - - - - - - - 2 - - - - - - - 12 ns 150°C TJ Tape & Reel (TR) 2002 - e1 yes Not For New Designs 1 (Unlimited) 6 - EAR99 - 2.4Ohm TIN SILVER COPPER - - - - 60V 300mW - - GULL WING 260 - 200mA 10 *K2 6 - - - - - - Dual ENHANCEMENT MODE 300mW - 6 ns - 2 N-Channel (Dual) SWITCHING 2.4 Ω @ 200mA, 10V 2.5V @ 1mA 15pF @ 10V 4.4nC @ 10V 5ns - 5 ns - 200mA - 20V 0.2A - 60V - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - - - - - 1.1mm 2.9mm 1.6mm No - ROHS3 Compliant Lead Free
                                          SM6K2T110
                                          SM6K2T110

                                          ROHM Semiconductor
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

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