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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Package / Case | Surface Mount | Transistor Element Material | Mfr | Number of Elements | Operating Temperature (Max.) | Package | Product Status | Usage Level | Voltage Rated | Packaging | Published | Series | JESD-609 Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Current Rating (Amps) | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Current - Test | Transistor Application | Polarity/Channel Type | Transistor Type | JEDEC-95 Code | Gain | Drain Current-Max (Abs) (ID) | DS Breakdown Voltage-Min | Power - Output | FET Technology | Power Dissipation-Max (Abs) | Voltage - Test | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипMRF8S9200NR3Anlielectronics Тип | NXP USA Inc. |
Trans RF MOSFET N-CH 70V 3-Pin OM-780 EP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | OM-780-2 | YES | SILICON | - | 1 | 225°C | - | - | - | 70V | Tape & Reel (TR) | 2009 | - | e3 | Active | 3 (168 Hours) | 2 | EAR99 | Matte Tin (Sn) | ESD PROTECTED | 8541.29.00.75 | - | DUAL | FLAT | 260 | - | 940MHz | 40 | - | - | R-CDFP-F2 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | 1.4A | AMPLIFIER | N-CHANNEL | LDMOS | - | 19.9dB | - | 70V | 58W | METAL-OXIDE SEMICONDUCTOR | - | 28V | ROHS3 Compliant | ||
| MRF8S9200NR3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMW6S004NT1Anlielectronics Тип | NXP USA Inc. |
FET RF 68V 1.96GHZ PLD-1.5
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | PLD-1.5 | YES | SILICON | - | 1 | 150°C | - | - | Military grade | 68V | Tape & Reel (TR) | 2009 | - | e3 | Active | 3 (168 Hours) | 4 | EAR99 | Matte Tin (Sn) | - | 8541.29.00.75 | - | QUAD | NO LEAD | 260 | - | 1.96GHz | 40 | MW6S004 | - | R-PQSO-N4 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | 50mA | AMPLIFIER | N-CHANNEL | LDMOS | - | 18dB | - | 68V | 4W | METAL-OXIDE SEMICONDUCTOR | - | 28V | ROHS3 Compliant | ||
| MW6S004NT1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMRF6V2010NR1Anlielectronics Тип | NXP USA Inc. |
Trans RF MOSFET N-CH 110V 3-Pin TO-270 T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | TO-270AA | YES | SILICON | - | 1 | 225°C | - | - | - | 110V | Tape & Reel (TR) | 2006 | - | e3 | Active | 3 (168 Hours) | 2 | EAR99 | Tin (Sn) | - | 8541.29.00.75 | - | DUAL | FLAT | 260 | not_compliant | 220MHz | 40 | MRF6V2010 | - | R-PDFM-F2 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | 30mA | AMPLIFIER | N-CHANNEL | LDMOS | - | 23.9dB | - | 110V | 10W | METAL-OXIDE SEMICONDUCTOR | - | 50V | ROHS3 Compliant | ||
| MRF6V2010NR1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAFT09MS015NT1Anlielectronics Тип | NXP USA Inc. |
RF MOSFET Transistors 136-94 MHz 16W 12.5V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | PLD-1.5W | - | - | - | - | - | - | - | Automotive grade | 40V | Tape & Reel (TR) | 2009 | - | e3 | Active | 3 (168 Hours) | - | EAR99 | Matte Tin (Sn) | - | 8541.29.00.40 | - | - | - | 260 | - | 870MHz | 40 | - | - | - | - | - | - | - | 100mA | - | - | LDMOS | - | 17.2dB | - | - | 16W | - | - | 12.5V | ROHS3 Compliant | ||
| AFT09MS015NT1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMRFE6VP100HR5Anlielectronics Тип | NXP USA Inc. |
RF MOSFET Transistors VHV6 100W 50V ISM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | NI780-4 | - | - | - | - | 150°C | - | - | - | 133V | Tape & Reel (TR) | 2012 | - | - | Active | Not Applicable | - | EAR99 | - | - | 8541.29.00.75 | - | - | - | 260 | - | 512MHz | 40 | MRFE6VP100 | - | - | - | - | - | - | 100mA | - | N-CHANNEL | LDMOS | - | 26dB | - | - | 100W | METAL-OXIDE SEMICONDUCTOR | - | 50V | ROHS3 Compliant | ||
| MRFE6VP100HR5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMRFE6VP6300HR5Anlielectronics Тип | NXP USA Inc. |
RF POWER FET, N CH, 125V, NI-780-4 - More Details
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | NI780-4 | YES | SILICON | - | 2 | 225°C | - | - | Military grade | 130V | Tape & Reel (TR) | 2006 | - | - | Active | Not Applicable | 4 | EAR99 | - | - | 8541.29.00.75 | - | - | FLAT | 260 | - | 230MHz | 40 | MRFE6VP6300 | - | R-CDFM-F4 | Not Qualified | COMMON SOURCE, 2 ELEMENTS | ENHANCEMENT MODE | SOURCE | 100mA | AMPLIFIER | N-CHANNEL | LDMOS (Dual) | - | 26.5dB | - | 130V | 300W | METAL-OXIDE SEMICONDUCTOR | - | 50V | ROHS3 Compliant | ||
| MRFE6VP6300HR5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAFT05MS003NT1Anlielectronics Тип | NXP USA Inc. |
Trans MOSFET N-CH 30V 3-Pin SOT-89 T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | TO-243AA | - | - | - | - | - | - | - | - | 30V | Tape & Reel (TR) | 2014 | - | e3 | Active | 1 (Unlimited) | - | EAR99 | Tin (Sn) | - | 8541.29.00.75 | - | - | - | NOT SPECIFIED | - | 520MHz | NOT SPECIFIED | - | - | - | - | - | - | - | 100mA | - | - | LDMOS | - | 20.8dB | - | - | 3W | - | - | 7.5V | ROHS3 Compliant | ||
| AFT05MS003NT1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBF862,215Anlielectronics Тип | NXP USA Inc. |
JFET N-CH 20V 25MA SOT23
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | TO-236-3, SC-59, SOT-23-3 | YES | SILICON | - | 1 | 150°C | - | - | - | 20V | Tape & Reel (TR) | 1999 | - | e3 | Obsolete | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | - | 8541.21.00.75 | 25mA | DUAL | GULL WING | 260 | - | - | NOT SPECIFIED | BF862 | 3 | R-PDSO-G3 | Not Qualified | SINGLE | DEPLETION MODE | - | - | AMPLIFIER | - | N-Channel JFET | TO-236AB | - | 0.04A | 20V | - | JUNCTION | 0.225W | - | ROHS3 Compliant | ||
| BF862,215 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMW6S010GNR1Anlielectronics Тип | NXP USA Inc. |
Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | TO-270BA | YES | SILICON | - | 1 | 225°C | - | - | Military grade | 68V | Tape & Reel (TR) | 2009 | - | e3 | Active | 3 (168 Hours) | 2 | EAR99 | Tin (Sn) | - | 8541.29.00.75 | - | DUAL | GULL WING | 260 | not_compliant | 960MHz | 40 | MW6S010 | - | R-PDSO-G2 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | 125mA | AMPLIFIER | N-CHANNEL | LDMOS | - | 18dB | - | 68V | 10W | METAL-OXIDE SEMICONDUCTOR | 61.4W | 28V | ROHS3 Compliant | ||
| MW6S010GNR1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMRFE6VP61K25HR6Anlielectronics Тип | NXP USA Inc. |
Trans RF MOSFET N-CH 133V 5-Pin Case 375D-05 T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | NI-1230 | YES | SILICON | - | 2 | 225°C | - | - | Military grade | 133V | Tape & Reel (TR) | 2006 | - | - | Active | Not Applicable | 4 | EAR99 | - | - | 8541.29.00.75 | - | - | FLAT | 260 | - | 230MHz | 40 | MRFE6VP61K25 | - | R-CDFM-F4 | Not Qualified | COMMON SOURCE, 2 ELEMENTS | ENHANCEMENT MODE | SOURCE | 100mA | AMPLIFIER | N-CHANNEL | LDMOS (Dual) | - | 24dB | - | 125V | 1250W | METAL-OXIDE SEMICONDUCTOR | 1300W | 50V | ROHS3 Compliant | ||
| MRFE6VP61K25HR6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAFT05MS031NR1Anlielectronics Тип | NXP USA Inc. |
FET RF 40V 520MHZ TO-270-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | TO-270AA | YES | - | - | - | 150°C | - | - | Military grade | 40V | Tape & Reel (TR) | 2009 | - | e3 | Active | 3 (168 Hours) | - | EAR99 | Tin (Sn) | - | 8541.29.00.40 | - | - | - | 260 | not_compliant | 520MHz | 40 | AFT05MS031 | - | - | - | Single | - | - | 10mA | - | N-CHANNEL | LDMOS | - | 17.7dB | - | - | 31W | METAL-OXIDE SEMICONDUCTOR | 294W | 13.6V | ROHS3 Compliant | ||
| AFT05MS031NR1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMRFE6S9125NR1Anlielectronics Тип | NXP USA Inc. |
Trans RF MOSFET N-CH 66V 5-Pin TO-270 W T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | TO-270AB | YES | SILICON | - | 1 | 225°C | - | - | - | 66V | Tape & Reel (TR) | 2006 | - | e3 | Not For New Designs | 3 (168 Hours) | 4 | EAR99 | Matte Tin (Sn) | - | 8541.29.00.75 | - | DUAL | FLAT | 260 | - | 880MHz | 40 | MRFE6S9125 | - | R-PDFP-F4 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | 950mA | AMPLIFIER | N-CHANNEL | LDMOS | - | 20.2dB | - | 66V | 27W | METAL-OXIDE SEMICONDUCTOR | - | 28V | ROHS3 Compliant | ||
| MRFE6S9125NR1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMRF085HR5178Anlielectronics Тип | NXP Semiconductors |
MRF085H - WIDEBAND RF POWER LDMO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NXP Semiconductors | - | - | Bulk | Active | - | - | - | - | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MRF085HR5178 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAFT09MS007NT1Anlielectronics Тип | NXP USA Inc. |
FET RF 30V 870MHZ PLD1.5W
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | PLD-1.5W | YES | - | - | - | 150°C | - | - | - | 30V | Tape & Reel (TR) | 2006 | - | e3 | Active | 3 (168 Hours) | - | EAR99 | Matte Tin (Sn) | - | 8541.29.00.40 | - | - | - | 260 | - | 870MHz | 40 | - | - | - | - | Single | - | - | 100mA | - | N-CHANNEL | LDMOS | - | 15.2dB | - | - | 7.3W | METAL-OXIDE SEMICONDUCTOR | 182W | 7.5V | ROHS3 Compliant | ||
| AFT09MS007NT1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAFT27S010NT1Anlielectronics Тип | NXP USA Inc. |
FET RF NCH 65V 2700MHZ PLD1.5W
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | PLD-1.5W | YES | - | - | - | 150°C | - | - | Automotive grade | 65V | Tape & Reel (TR) | 2013 | - | e3 | Active | 3 (168 Hours) | - | EAR99 | Matte Tin (Sn) | - | 8541.29.00.40 | - | - | - | 260 | - | 2.17GHz | 40 | - | - | - | - | Single | - | - | 90mA | - | N-CHANNEL | LDMOS | - | 21.7dB | - | - | 1.26W | METAL-OXIDE SEMICONDUCTOR | - | 28V | ROHS3 Compliant | ||
| AFT27S010NT1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAFT05MS006NT1Anlielectronics Тип | NXP USA Inc. |
Trans MOSFET N-CH 30V 3-Pin PLD-1.5W T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | PLD-1.5W | - | - | - | - | - | - | - | Automotive grade | 30V | Tape & Reel (TR) | 2009 | - | e3 | Not For New Designs | 3 (168 Hours) | - | EAR99 | Matte Tin (Sn) | - | 8541.29.00.75 | - | - | - | 260 | - | 520MHz | 40 | - | - | - | - | - | - | - | 100mA | - | - | LDMOS | - | 18.3dB | - | - | 6W | - | - | 7.5V | ROHS3 Compliant | ||
| AFT05MS006NT1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAFT05MS004NT1Anlielectronics Тип | NXP USA Inc. |
RF POWER LDMOS TRANSISTOR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | TO-243AA | - | - | - | - | - | - | - | Automotive grade | 30V | Tape & Reel (TR) | 2010 | - | e3 | Active | 1 (Unlimited) | - | EAR99 | Matte Tin (Sn) | - | 8541.29.00.75 | - | - | - | 260 | - | 520MHz | 40 | - | - | - | - | - | - | - | 100mA | - | - | LDMOS | - | 20.9dB | - | - | 4.9W | - | - | 7.5V | ROHS3 Compliant | ||
| AFT05MS004NT1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAFT05MP075NR1Anlielectronics Тип | NXP USA Inc. |
AFT05MPx Series 40 V 520 MHz SMT RF Power LDMOS Transistor - TO-270WB-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | TO-270AB | YES | - | - | - | 225°C | - | - | - | 40V | Tape & Reel (TR) | 2009 | - | e3 | Active | 3 (168 Hours) | - | EAR99 | Matte Tin (Sn) | - | 8541.29.00.40 | - | - | - | 260 | - | 520MHz | 40 | - | - | - | - | Single | - | - | 400mA | - | N-CHANNEL | LDMOS (Dual) | - | 18.5dB | - | - | 70W | METAL-OXIDE SEMICONDUCTOR | 690W | 12.5V | ROHS3 Compliant | ||
| AFT05MP075NR1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAFT20S015GNR1Anlielectronics Тип | NXP USA Inc. |
RF MOSFET Transistors AF 1.8-2.7G 15W TO270-2G
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | TO-270BA | YES | - | - | - | 125°C | - | - | Automotive grade | 65V | Tape & Reel (TR) | 2006 | - | e3 | Active | 3 (168 Hours) | - | EAR99 | Matte Tin (Sn) | - | 8541.29.00.40 | - | - | - | 260 | - | 2.17GHz | 40 | - | - | - | - | Single | - | - | 132mA | - | N-CHANNEL | LDMOS | - | 17.6dB | - | - | 1.5W | METAL-OXIDE SEMICONDUCTOR | - | 28V | ROHS3 Compliant | ||
| AFT20S015GNR1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAFT09MS031NR1Anlielectronics Тип | NXP USA Inc. |
FET RF 40V 870MHZ TO-270-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | TO-270AA | YES | - | - | - | 150°C | - | - | Automotive grade | 40V | Tape & Reel (TR) | 2006 | - | e3 | Active | 3 (168 Hours) | - | EAR99 | Matte Tin (Sn) | - | 8541.29.00.40 | - | - | - | 260 | - | 870MHz | 40 | AFT09MS031 | - | - | - | Single | - | - | 500mA | - | N-CHANNEL | LDMOS | - | 17.2dB | - | - | 31W | METAL-OXIDE SEMICONDUCTOR | 317W | 13.6V | ROHS3 Compliant | ||
| AFT09MS031NR1 |
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