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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Number of Terminals | Transistor Element Material | Brand | Channel Mode | Continuous Drain Current | Drain Current-Max (ID) | Drain Efficiency (Typ) | Drain Source Voltage (Max) | Factory Pack QuantityFactory Pack Quantity | Frequency(Max) | Id - Continuous Drain Current | Ihs Manufacturer | Input Capacitance (Typ)@Vds | Manufacturer | Manufacturer Part Number | Maximum Operating Temperature | Mounting | Mounting Styles | Number of Elements | Number of Elements per Chip | Operating Temp Range | Operating Temperature-Max | Output Power (Max) | Package Body Material | Package Description | Package Shape | Package Style | Package Type | Part Life Cycle Code | Part Package Code | Pd - Power Dissipation | Power Dissipation (Max) | Power Gain (Typ)@Vds | Rad Hardened | Rds On - Drain-Source Resistance | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Transistor Polarity | Unit Weight | Usage Level | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Applications | Additional Feature | Subcategory | Max Power Dissipation | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Frequency | Configuration | Element Configuration | Operating Mode | Case Connection | Output Power | Transistor Application | Polarity/Channel Type | Product Type | Transistor Type | Continuous Drain Current (ID) | JEDEC-95 Code | Gate to Source Voltage (Vgs) | Gain | Screening Level | Input Capacitance | DS Breakdown Voltage-Min | Channel Type | FET Technology | Highest Frequency Band | Frequency (Min) | Product Category | Height | Length | Width |
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  | Mfr. ТипD2225UKAnlielectronics Тип | Semelab |
RF MOSFET Transistors Silicon DMOS RF FET 5W-12.5V-1GHz PP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | SOIC-8 | YES | - | 8 | SILICON | - | - | - | 4 A | - | - | 50 | - | 4 A | SEMELAB LTD | - | - | D2225UK | + 150 C | - | SMD/SMT | 2 | - | - | 200 °C | - | UNSPECIFIED | SMALL OUTLINE, R-XDSO-G8 | RECTANGULAR | SMALL OUTLINE | - | Active | SOT | 17.5 W | - | - | - | - | NOT SPECIFIED | 5.11 | Details | Yes | N-Channel | - | - | 40 V | 20 V | 0.5 V to 7 V | - | e4 | No | EAR99 | RF Power MOSFET | GOLD | - | - | LOW NOISE | - | - | - | DUAL | GULL WING | NOT SPECIFIED | compliant | 8 | R-XDSO-G8 | Not Qualified | 1 GHz | Dual | - | ENHANCEMENT MODE | - | 5 W | AMPLIFIER | N-CHANNEL | - | DMOS FET | - | - | - | 10 dB | - | - | 40 V | - | METAL-OXIDE SEMICONDUCTOR | ULTRA HIGH FREQUENCY BAND | - | - | - | - | - | ||
| D2225UK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD1010UKAnlielectronics Тип | Seme LAB |
Trans RF MOSFET N-CH 70V 20A 5-Pin Case DR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | Enhancement | 20(A) | - | 50(Min)(%) | 70(V) | - | 500(MHz) | - | - | 240(MAX)@0V(pF) | - | - | - | Screw | - | 2 | - | -65C to 200C | - | 125 | - | - | - | - | CASE DR | - | - | - | 389000(mW) | 10(MIN)@28V(dB) | No | - | - | - | - | - | - | - | Military grade | - | - | - | - | - | - | - | - | - | - | HF/VHF/UHF | - | - | - | - | - | - | - | - | 5 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Military | - | - | N | - | - | 1(MHz) | - | - | - | - | ||
| D1010UK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD2013UKAnlielectronics Тип | Seme LAB |
Trans RF MOSFET N-CH 65V 4A 5-Pin Case DK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | 4 | SILICON | - | Enhancement | 4(A) | 4 A | 40(Min)(%) | 65(V) | - | 2000(MHz) | - | SEMELAB LTD | 48(MAX)@0V(pF) | TT Electronics Power and Hybrid / Semelab Limited | D2013UK | - | Screw | - | 2 | - | -65C to 200C | 200 °C | 20 | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F4 | RECTANGULAR | FLANGE MOUNT | CASE DK | Active | - | - | 83000(mW) | 10(MIN)@28V(dB) | No | - | NOT SPECIFIED | 5.1 | - | Yes | - | - | Military grade | - | - | - | - | e4 | No | EAR99 | - | GOLD | - | HF/VHF/UHF | LOW NOISE | - | - | - | DUAL | FLAT | NOT SPECIFIED | compliant | 5 | R-CDFM-F4 | Not Qualified | - | COMMON SOURCE, 2 ELEMENTS | - | ENHANCEMENT MODE | SOURCE | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | Military | - | 65 V | N | METAL-OXIDE SEMICONDUCTOR | ULTRA HIGH FREQUENCY BAND | 1(MHz) | - | - | - | - | ||
| D2013UK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD2008UKAnlielectronics Тип | Seme LAB |
RF POWER TRANSISTOR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | NO | - | 3 | SILICON | - | - | - | 2 A | - | - | - | - | - | SEMELAB LTD | - | TT Electronics Power and Hybrid / Semelab Limited | D2008UK | - | - | - | 1 | - | - | 200 °C | - | METAL | CYLINDRICAL, O-MBCY-W3 | ROUND | CYLINDRICAL | - | Active | TO-39 | - | - | - | - | - | NOT SPECIFIED | 5.09 | - | Yes | - | - | - | - | - | - | - | e4 | No | EAR99 | - | GOLD | - | - | LOW NOISE | - | - | - | BOTTOM | WIRE | NOT SPECIFIED | compliant | 3 | O-MBCY-W3 | Not Qualified | - | SINGLE | - | ENHANCEMENT MODE | - | - | AMPLIFIER | N-CHANNEL | - | - | - | TO-39 | - | - | - | - | 65 V | - | METAL-OXIDE SEMICONDUCTOR | VERY HIGH FREQUENCY BAND | - | - | - | - | - | ||
| D2008UK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD2081UK.FTRAnlielectronics Тип | Seme LAB |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide...
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| D2081UK.FTR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD1002UKAnlielectronics Тип | Seme LAB |
N-Channel MOSFET, 10 A, 70 V, 4-Pin DA Semelab D1002UK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Panel | Screw Mount | DA | YES | 4 | 4 | SILICON | Semelab / TT Electronics | Enhancement | - | - | - | - | 25 | - | 10 A | SEMELAB LTD | - | TT Electronics | D1002UK | +200 °C | - | SMD/SMT | 1 | 1 | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, O-CRFM-F4 | ROUND | FLANGE MOUNT | DA | Active | - | 87 W | - | - | - | - | NOT SPECIFIED | 5.05 | Compliant | Yes | N-Channel | 0.381488 oz | - | 70 V | 20 V | 1 V to 7 V | TetraFET | e4 | No | EAR99 | RF Power MOSFET | GOLD | 200 °C | - | LOW NOISE | MOSFETs | 87 W | Si | RADIAL | FLAT | NOT SPECIFIED | compliant | 4 | O-CRFM-F4 | Not Qualified | 175 MHz | Single | Single | ENHANCEMENT MODE | SOURCE | 40 W | AMPLIFIER | N-CHANNEL | RF MOSFET Transistors | DMOS FET | 10 A | - | 20 V | 16 dB | - | 120 pF | 70 V | N | METAL-OXIDE SEMICONDUCTOR | ULTRA HIGH FREQUENCY BAND | - | RF MOSFET Transistors | 6.6mm | 24.76mm | 9.52mm | ||
| D1002UK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD1020UKAnlielectronics Тип | Seme LAB |
RF MOSFET Transistors Silicon DMOS RF FET 20W-28V-175MHz SE
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | DR | YES | - | 4 | SILICON | Semelab / TT Electronics | Enhancement | - | 25 A | - | - | 10 | - | 25 A | SEMELAB LTD | - | TT Electronics | D1020UK | + 150 C | - | SMD/SMT | 2 | - | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F4 | RECTANGULAR | FLANGE MOUNT | - | Active | - | 389 W | - | - | - | - | NOT SPECIFIED | 5.12 | - | Yes | N-Channel | - | - | 70 V | 20 V | 1 V to 7 V | - | e4 | No | EAR99 | RF Power MOSFET | GOLD | - | - | LOW NOISE | MOSFETs | - | Si | DUAL | FLAT | NOT SPECIFIED | compliant | 5 | R-CDFM-F4 | Not Qualified | 400 MHz | Dual | - | ENHANCEMENT MODE | SOURCE | 150 W | AMPLIFIER | N-CHANNEL | RF MOSFET Transistors | DMOS FET | - | - | - | 10 dB | - | - | 70 V | - | METAL-OXIDE SEMICONDUCTOR | ULTRA HIGH FREQUENCY BAND | - | RF MOSFET Transistors | 5.08 mm | 34.03 mm | 22.22 mm | ||
| D1020UK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD1093UKAnlielectronics Тип | Seme LAB |
RF POWER TRANSISTOR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | 6 | SILICON | - | - | - | - | - | - | - | - | - | SEMELAB LTD | - | TT Electronics Power and Hybrid / Semelab Limited | D1093UK | - | - | - | 1 | - | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F6 | RECTANGULAR | FLANGE MOUNT | - | Obsolete | SOT | - | - | - | - | - | NOT SPECIFIED | 5.31 | - | Yes | - | - | - | - | - | - | - | e4 | No | EAR99 | - | GOLD | - | - | LOW NOISE | - | - | - | DUAL | FLAT | NOT SPECIFIED | compliant | 6 | R-CDFM-F6 | Not Qualified | - | SINGLE | - | ENHANCEMENT MODE | SOURCE | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | - | - | 65 V | - | METAL-OXIDE SEMICONDUCTOR | ULTRA HIGH FREQUENCY BAND | - | - | - | - | - | ||
| D1093UK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD1001UKAnlielectronics Тип | Seme LAB |
N-Channel MOSFET, 5 A, 70 V, 4-Pin DA Semelab D1001UK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Screw Mount | DA | YES | - | 4 | SILICON | Semelab / TT Electronics | Enhancement | - | - | - | - | 25 | - | 5 A | SEMELAB LTD | - | TT Electronics | D1001UK | +200 °C | - | SMD/SMT | 1 | 1 | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, O-CRFM-F4 | ROUND | FLANGE MOUNT | DA | Active | - | 50 W | - | - | - | 1 Ohms | NOT SPECIFIED | 5.11 | - | Yes | N-Channel | - | - | 70 V | 20 V | 1 V to 7 V | TetraFET | e4 | No | EAR99 | RF Power MOSFET | GOLD | - | - | LOW NOISE | MOSFETs | - | Si | RADIAL | FLAT | NOT SPECIFIED | compliant | 4 | O-CRFM-F4 | Not Qualified | 175 MHz | Single | - | ENHANCEMENT MODE | SOURCE | 20 W | AMPLIFIER | N-CHANNEL | RF MOSFET Transistors | DMOS FET | - | - | - | 16 dB | - | - | 70 V | N | METAL-OXIDE SEMICONDUCTOR | ULTRA HIGH FREQUENCY BAND | - | RF MOSFET Transistors | 6.6mm | 24.76mm | 9.52mm | ||
| D1001UK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD1013UKAnlielectronics Тип | Seme LAB |
N-Channel MOSFET, 5 A, 70 V, 3-Pin DP Semelab D1013UK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Screw Mount | - | YES | - | 2 | SILICON | - | Enhancement | - | - | - | - | - | - | - | SEMELAB LTD | - | TT Electronics Power and Hybrid / Semelab Limited | D1013UK | +200 °C | - | - | 1 | 1 | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | DP | Active | - | - | - | - | - | - | NOT SPECIFIED | 5.08 | - | No | - | - | - | - | - | - | TetraFET | - | No | EAR99 | - | - | - | - | LOW NOISE | - | - | - | DUAL | FLAT | NOT SPECIFIED | compliant | 3 | R-CDFM-F2 | Not Qualified | - | SINGLE | - | ENHANCEMENT MODE | SOURCE | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | - | - | 70 V | N | METAL-OXIDE SEMICONDUCTOR | ULTRA HIGH FREQUENCY BAND | - | - | 5.08mm | 18.92mm | 6.35mm | ||
| D1013UK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD2022UKAnlielectronics Тип | Seme LAB |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 25W - 28V - 500MHZ PUSHPULL
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | 4 | SILICON | - | - | - | - | - | - | - | - | - | SEMELAB LTD | - | TT Electronics Power and Hybrid / Semelab Limited | D2022UK | - | - | - | 2 | - | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F4 | RECTANGULAR | FLANGE MOUNT | - | Active | - | - | - | - | - | - | NOT SPECIFIED | 5.77 | - | No | - | - | - | - | - | - | - | - | No | EAR99 | - | - | - | - | LOW NOISE | - | - | - | DUAL | FLAT | NOT SPECIFIED | compliant | 4 | R-CDFM-F4 | Not Qualified | - | COMMON SOURCE, 2 ELEMENTS | - | ENHANCEMENT MODE | SOURCE | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | - | - | 65 V | - | METAL-OXIDE SEMICONDUCTOR | ULTRA HIGH FREQUENCY BAND | - | - | - | - | - | ||
| D2022UK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD2205UKAnlielectronics Тип | Seme LAB |
RF MOSFET Transistors Silicon DMOS RF FET 7.5W-12.5V-1GHz SE
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | DP | YES | - | 2 | SILICON | Semelab / TT Electronics | - | - | 6 A | - | - | 25 | - | 6 A | SEMELAB LTD | - | TT Electronics | D2205UK | + 150 C | - | SMD/SMT | 1 | - | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, S-CDFM-F2 | SQUARE | FLANGE MOUNT | - | Active | - | 35 W | - | - | - | - | NOT SPECIFIED | 5.12 | - | Yes | N-Channel | - | - | 40 V | 20 V | 1 V to 7 V | - | e4 | No | EAR99 | RF Power MOSFET | GOLD | - | - | LOW NOISE | MOSFETs | - | Si | DUAL | FLAT | NOT SPECIFIED | compliant | 3 | S-CDFM-F2 | Not Qualified | 1 GHz | Single | - | ENHANCEMENT MODE | SOURCE | 7.5 W | AMPLIFIER | N-CHANNEL | RF MOSFET Transistors | DMOS FET | - | - | - | 10 dB | - | - | 40 V | - | METAL-OXIDE SEMICONDUCTOR | ULTRA HIGH FREQUENCY BAND | - | RF MOSFET Transistors | 5.08 mm | 18.92 mm | 6.35 mm | ||
| D2205UK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD2004UKAnlielectronics Тип | Seme LAB |
Trans RF MOSFET N-CH 65V 2A 5-Pin Case DK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | 4 | SILICON | - | - | - | - | - | - | - | - | - | SEMELAB LTD | - | TT Electronics Power and Hybrid / Semelab Limited | D2004UK | - | - | - | 2 | - | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F4 | RECTANGULAR | FLANGE MOUNT | - | Active | - | - | - | - | - | - | NOT SPECIFIED | 5.11 | - | Yes | - | - | - | - | - | - | - | e4 | No | EAR99 | - | GOLD | - | - | LOW NOISE | - | - | - | DUAL | FLAT | NOT SPECIFIED | compliant | 5 | R-CDFM-F4 | Not Qualified | - | COMMON SOURCE, 2 ELEMENTS | - | ENHANCEMENT MODE | SOURCE | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | - | - | 65 V | - | METAL-OXIDE SEMICONDUCTOR | ULTRA HIGH FREQUENCY BAND | - | - | - | - | - | ||
| D2004UK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD1028UKAnlielectronics Тип | Seme LAB |
Dual N-Channel MOSFET, 30 A, 70 V, 5-Pin DR Semelab D1028UK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Screw Mount | DR | YES | - | 4 | SILICON | Semelab / TT Electronics | Enhancement | - | - | - | - | 10 | - | 30 A | TT ELECTRONICS PLC | - | TT Electronics | D1028UK | +200 °C | - | SMD/SMT | 2 | 2 | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | CERAMIC, DR, 5 PIN | RECTANGULAR | FLANGE MOUNT | DR | Active | - | 438 W | - | - | - | - | NOT SPECIFIED | 5.14 | - | Yes | N-Channel | 1.316671 oz | - | 70 V | 20 V | 1 V to 7 V | TetraFET | - | - | EAR99 | RF Power MOSFET | - | - | - | LOW NOISE | MOSFETs | - | Si | DUAL | FLAT | NOT SPECIFIED | compliant | 5 | R-CDFM-F4 | Not Qualified | 175 MHz | Dual | - | ENHANCEMENT MODE | SOURCE | 300 W | AMPLIFIER | N-CHANNEL | RF MOSFET Transistors | DMOS FET | - | - | - | 13 dB | - | - | 70 V | N | METAL-OXIDE SEMICONDUCTOR | ULTRA HIGH FREQUENCY BAND | - | RF MOSFET Transistors | 5.08mm | 34.03mm | 10.16mm | ||
| D1028UK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD1008UKAnlielectronics Тип | Seme LAB |
Dual N-Channel MOSFET, 10 A, 70 V, 5-Pin DK Semelab D1008UK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Screw Mount | DK | YES | - | 4 | SILICON | Semelab / TT Electronics | Enhancement | - | - | - | - | 25 | - | 10 A | SEMELAB LTD | - | TT Electronics | D1008UK | +200 °C | - | SMD/SMT | 2 | 2 | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F4 | RECTANGULAR | FLANGE MOUNT | DK | Active | - | 175 W | - | - | - | - | NOT SPECIFIED | 5.11 | - | Yes | N-Channel | - | - | 70 V | 20 V | 1 V to 7 V | TetraFET | e4 | No | EAR99 | RF Power MOSFET | GOLD | - | - | LOW NOISE | MOSFETs | - | Si | DUAL | FLAT | NOT SPECIFIED | compliant | 5 | R-CDFM-F4 | Not Qualified | 500 MHz | Dual | - | ENHANCEMENT MODE | SOURCE | 80 W | AMPLIFIER | N-CHANNEL | RF MOSFET Transistors | DMOS FET | - | - | - | 13 dB | - | - | 70 V | N | METAL-OXIDE SEMICONDUCTOR | ULTRA HIGH FREQUENCY BAND | - | RF MOSFET Transistors | 4.82mm | 24.76mm | 6.47mm | ||
| D1008UK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD1094UKAnlielectronics Тип | Seme LAB |
Trans RF MOSFET N-CH 65V 6A 6-Pin SOT-171
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | 6 | SILICON | - | - | - | - | - | - | - | - | - | SEMELAB LTD | - | TT Electronics Power and Hybrid / Semelab Limited | D1094UK | - | - | - | 1 | - | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F6 | RECTANGULAR | FLANGE MOUNT | - | Active | - | - | - | - | - | - | NOT SPECIFIED | 1.26 | - | Yes | - | - | - | - | - | - | - | e4 | No | EAR99 | - | GOLD | - | - | LOW NOISE | - | - | - | DUAL | FLAT | NOT SPECIFIED | compliant | 6 | R-CDFM-F6 | Not Qualified | - | SINGLE | - | ENHANCEMENT MODE | SOURCE | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | - | - | 65 V | - | METAL-OXIDE SEMICONDUCTOR | ULTRA HIGH FREQUENCY BAND | - | - | - | - | - | ||
| D1094UK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD1209UKAnlielectronics Тип | Seme LAB |
RF POWER TRANSISTOR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | 4 | SILICON | - | - | - | 10 A | - | - | - | - | - | SEMELAB LTD | - | TT Electronics Power and Hybrid / Semelab Limited | D1209UK | - | - | - | 2 | - | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F4 | RECTANGULAR | FLANGE MOUNT | - | Obsolete | - | - | - | - | - | - | NOT SPECIFIED | 5.28 | - | Yes | - | - | - | - | - | - | - | e4 | No | EAR99 | - | GOLD | - | - | LOW NOISE | - | - | - | DUAL | FLAT | NOT SPECIFIED | compliant | 5 | R-CDFM-F4 | Not Qualified | - | COMMON SOURCE, 2 ELEMENTS | - | ENHANCEMENT MODE | SOURCE | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | - | - | 40 V | - | METAL-OXIDE SEMICONDUCTOR | ULTRA HIGH FREQUENCY BAND | - | - | - | - | - | ||
| D1209UK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD5029UKAnlielectronics Тип | Seme LAB |
RF POWER TRANSISTOR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | 4 | SILICON | - | - | - | - | - | - | - | - | - | SEMELAB LTD | - | TT Electronics Power and Hybrid / Semelab Limited | D5029UK | - | - | - | 2 | - | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F4 | RECTANGULAR | FLANGE MOUNT | - | Active | - | - | - | - | - | - | NOT SPECIFIED | 5.12 | - | Yes | - | - | - | - | - | - | - | e4 | No | EAR99 | - | GOLD | - | - | LOW NOISE | - | - | - | DUAL | FLAT | NOT SPECIFIED | compliant | 5 | R-CDFM-F4 | Not Qualified | - | COMMON SOURCE, 2 ELEMENTS | - | ENHANCEMENT MODE | SOURCE | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | - | - | 125 V | - | METAL-OXIDE SEMICONDUCTOR | ULTRA HIGH FREQUENCY BAND | - | - | - | - | - | ||
| D5029UK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD2208UKAnlielectronics Тип | Seme LAB |
RF MOSFET Transistors Silicon DMOS RF FET 4OW-12.5V-500MHz PP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | DK | - | - | - | - | Semelab / TT Electronics | - | - | - | - | - | 25 | - | 16 A | - | - | TT Electronics | - | + 150 C | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | 134 W | - | - | - | - | - | - | - | - | N-Channel | - | - | 40 V | 20 V | 0.5 V to 7 V | - | - | - | - | RF Power MOSFET | - | - | - | - | MOSFETs | - | Si | - | - | - | - | - | - | - | 500 MHz | Dual | - | - | - | 40 W | - | - | RF MOSFET Transistors | DMOS FET | - | - | - | 10 dB | - | - | - | - | - | - | - | RF MOSFET Transistors | - | - | - | ||
| D2208UK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD2219UKAnlielectronics Тип | Semelab |
RF MOSFET Transistors Silicon DMOS RF FET 2.5W-12.5V-1GHz SE
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | SOIC-8 | - | - | - | - | - | Enhancement | - | - | - | - | 50 | - | 2 A | - | - | - | - | + 150 C | - | SMD/SMT | - | 1 | - | - | - | - | - | - | - | SOIC | - | - | 17.5 W | - | - | - | - | - | - | Details | - | N-Channel | - | - | 40 V | 20 V | 1 V to 5 V | TetraFET | - | - | - | RF Power MOSFET | - | - | - | - | - | - | - | - | - | - | - | 8 | - | - | 1 GHz | Single | - | - | - | 2.5 W | - | - | - | DMOS FET | - | - | - | 10 dB | - | - | - | N | - | - | - | - | 2.18 mm | 5.08 mm | 4.06 mm | ||
| D2219UK |
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