- Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - FETs, MOSFETs - RF
| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Lifecycle Status | Mount | Package / Case | Surface Mount | Number of Pins | Weight | Transistor Element Material | Breakdown Voltage / V | Mfr | Number of Elements | Operating Temperature (Max.) | Package | Product Status | Usage Level | Voltage Rated | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Voltage - Rated DC | Current Rating (Amps) | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Current Rating | Frequency | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Qualification Status | Configuration | Element Configuration | Nominal Supply Current | Operating Mode | Power Dissipation | Case Connection | Current - Test | Transistor Application | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Transistor Type | Continuous Drain Current (ID) | JEDEC-95 Code | Gate to Source Voltage (Vgs) | Gain | Max Output Power | Drain Current-Max (Abs) (ID) | Drain to Source Breakdown Voltage | Input Capacitance | DS Breakdown Voltage-Min | Power - Output | FET Technology | Power Dissipation-Max (Abs) | Noise Figure | Voltage - Test | Feedback Cap-Max (Crss) | Source Url Status Check Date | Test Voltage | Min Breakdown Voltage | Power Gain-Min (Gp) | Height | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипMRF7S27130HSR3Anlielectronics Тип | NXP USA Inc. |
Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | - | NI-780S | - | - | - | - | - | - | - | - | - | - | - | 65V | Tape & Reel (TR) | 2009 | - | - | - | Obsolete | Not Applicable | - | - | EAR99 | - | - | - | - | 8541.29.00.75 | - | - | - | - | - | - | - | 2.7GHz | - | MRF7S27130 | - | - | - | - | - | - | - | - | - | 1.5A | - | - | - | LDMOS | - | - | - | 16.5dB | - | - | - | - | - | 23W | - | - | - | 28V | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| MRF7S27130HSR3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSD2932WAnlielectronics Тип | STMicroelectronics |
Trans RF MOSFET N-CH 125V 40A 5-Pin Case M-244 Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 32 Weeks | - | Screw | M244 | - | 5 | - | - | - | - | 2 | - | - | - | - | - | Tray | - | - | - | - | Active | 1 (Unlimited) | - | - | EAR99 | - | 150°C | -65°C | - | - | - | - | 500W | - | - | - | 40A | 175MHz | - | SD2932 | - | - | - | - | Dual | - | - | 500W | - | 500mA | - | 125V | - | N-Channel | 40A | - | 20V | 16dB | - | - | 125V | - | - | 300W | METAL-OXIDE SEMICONDUCTOR | - | - | 50V | - | - | - | 125V | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| SD2932W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMRFE6VP5600HR6Anlielectronics Тип | NXP USA Inc. |
RF MOSFET Transistors VHV6 600W 50V NI1230H
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | - | NI-1230-4H | YES | - | - | SILICON | - | - | 2 | 225°C | - | - | Military grade | 130V | Tape & Reel (TR) | 2006 | - | - | - | Active | Not Applicable | 4 | - | EAR99 | - | - | - | - | 8541.29.00.75 | - | - | - | - | FLAT | 260 | - | 230MHz | 40 | MRFE6VP5600 | - | R-CDFM-F4 | Not Qualified | COMMON SOURCE, 2 ELEMENTS | - | - | ENHANCEMENT MODE | - | SOURCE | 100mA | AMPLIFIER | - | N-CHANNEL | LDMOS (Dual) | - | - | - | 25dB | - | - | - | - | 130V | 600W | METAL-OXIDE SEMICONDUCTOR | 1670W | - | 50V | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| MRFE6VP5600HR6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипATF-38143-TR1GAnlielectronics Тип | Broadcom Limited |
Trans JFET N-CH 4.5V 145mA pHEMT 4-Pin(3 Tab) SOT-343 T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | Surface Mount | SC-82A, SOT-343 | - | 4 | - | - | - | - | 1 | - | - | - | - | - | Tape & Reel (TR) | 2012 | - | e3 | - | Obsolete | 1 (Unlimited) | 4 | - | EAR99 | Matte Tin (Sn) | 160°C | -65°C | - | - | 4.5V | - | 580mW | DUAL | GULL WING | 260 | 145mA | 2GHz | NOT SPECIFIED | - | - | - | Not Qualified | SINGLE | - | - | DEPLETION MODE | - | SOURCE | 10mA | AMPLIFIER | 4.5V | N-CHANNEL | pHEMT FET | 145mA | - | -4V | 16dB | - | - | - | - | - | 12dBm | HIGH ELECTRON MOBILITY | - | 0.4dB | 2V | - | - | - | - | - | - | - | - | - | - | RoHS Compliant | Lead Free | ||
| ATF-38143-TR1G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипJ309Anlielectronics Тип | ON Semiconductor |
IC SWITCH RF N-CH 25V 10MA TO-92
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | LAST SHIPMENTS (Last Updated: 1 week ago) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | - | 3 | 201mg | - | -25V | - | 1 | - | - | - | - | - | Bulk | - | - | e0 | no | Obsolete | 1 (Unlimited) | 3 | Through Hole | - | Tin/Lead (Sn/Pb) | 150°C | -55°C | - | 8541.21.00.75 | 25V | - | 625mW | BOTTOM | - | 240 | 10mA | 100MHz | 30 | J309 | 3 | - | - | - | Single | - | DEPLETION MODE | 350mW | - | 10mA | AMPLIFIER | 25V | - | N-Channel JFET | 30mA | - | -25V | 16dB | - | - | 25V | - | - | - | JUNCTION | - | 3 dB | 10V | 2.5 pF | - | - | - | - | 5.33mm | 5.2mm | 4.19mm | No | No SVHC | Non-RoHS Compliant | Lead Free | ||
| J309 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMRFE6VP61K25HR5Anlielectronics Тип | NXP USA Inc. |
RF MOSFET Transistors VHV6 1.25KW ISM NI1230H
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | - | NI-1230 | - | - | - | - | - | - | - | 225°C | - | - | Military grade | 133V | Tape & Reel (TR) | 2006 | - | - | - | Active | Not Applicable | - | - | EAR99 | - | - | - | - | 8541.29.00.75 | - | - | - | - | - | 260 | - | 230MHz | 40 | MRFE6VP61K25 | - | - | - | - | - | - | - | - | - | 100mA | - | - | N-CHANNEL | LDMOS (Dual) | - | - | - | 24dB | - | - | - | - | - | 1250W | METAL-OXIDE SEMICONDUCTOR | 1300W | - | 50V | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| MRFE6VP61K25HR5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипATF-551M4-BLKAnlielectronics Тип | Broadcom Limited |
Trans JFET N-CH 5V 100mA GaAs pHEMT 4-Pin Mini-PAK Bag
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | Surface Mount | 0505 (1412 Metric) | - | 4 | - | - | - | - | 1 | - | - | - | - | - | Bulk | 2003 | - | e4 | - | Obsolete | 1 (Unlimited) | 4 | - | EAR99 | Gold (Au) | 150°C | -65°C | - | - | 2.7V | - | 270mW | BOTTOM | - | 260 | 100mA | 2GHz | - | ATF-551M4 | - | - | - | SINGLE | - | 10mA | DEPLETION MODE | 270mW | - | - | AMPLIFIER | 2.7V | N-CHANNEL | pHEMT FET | 100mA | - | 1V | 17.5dB | - | 0.1A | - | - | 5V | 14.6dBm | HIGH ELECTRON MOBILITY | - | 0.5dB | - | - | - | - | - | - | - | - | - | No | - | RoHS Compliant | Lead Free | ||
| ATF-551M4-BLK | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMRF8P9300HSR6Anlielectronics Тип | NXP USA Inc. |
FET RF 2CH 70V 960MHZ NI-1230HS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | - | NI-1230S | YES | - | - | SILICON | - | - | 2 | 225°C | - | - | - | 70V | Tape & Reel (TR) | 2006 | - | - | - | Last Time Buy | Not Applicable | 4 | - | EAR99 | - | - | - | - | 8541.29.00.75 | - | - | - | - | FLAT | 260 | - | 960MHz | 40 | MRF8P9300 | - | R-CDFP-F4 | Not Qualified | COMMON SOURCE, 2 ELEMENTS | - | - | ENHANCEMENT MODE | - | SOURCE | 2.4A | AMPLIFIER | - | N-CHANNEL | LDMOS (Dual) | - | - | - | 19.4dB | - | - | - | - | 70V | 100W | METAL-OXIDE SEMICONDUCTOR | - | - | 28V | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| MRF8P9300HSR6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипA2T23H300-24SR6Anlielectronics Тип | NXP USA Inc. |
RF MOSFET Transistors BL RF
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | - | NI-1230-4LS2L | - | - | - | - | - | - | - | - | - | - | - | 65V | Tape & Reel (TR) | 2006 | - | - | - | Active | Not Applicable | - | - | EAR99 | - | - | - | - | 8541.29.00.75 | - | - | - | - | - | NOT SPECIFIED | - | 2.3GHz | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | 750mA | - | - | - | LDMOS (Dual) | - | - | - | 14.9dB | - | - | - | - | - | 66W | - | - | - | 28V | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| A2T23H300-24SR6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипPD55003S-EAnlielectronics Тип | STMicroelectronics |
FET RF 40V 500MHZ PWRSO10
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 25 Weeks | - | Surface Mount | PowerSO-10 Exposed Bottom Pad | - | 3 | - | - | - | - | 1 | - | - | - | - | - | Tube | - | - | e3 | - | Active | 3 (168 Hours) | 2 | - | EAR99 | Matte Tin (Sn) - annealed | 165°C | -65°C | HIGH RELIABILITY | - | 40V | - | 31.7W | DUAL | FLAT | - | 2.5A | 500MHz | - | PD55003 | 10 | R-PDSO-F2 | - | - | Single | - | ENHANCEMENT MODE | 31.7W | SOURCE | 50mA | AMPLIFIER | 40V | N-CHANNEL | LDMOS | 2.5A | - | 20V | 17dB | 3W | - | 40V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | 12.5V | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| PD55003S-E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMRF6V2150NBR1Anlielectronics Тип | NXP USA Inc. |
RF MOSFET, N CHANNEL, 110V, TO-272
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | - | TO-272BB | YES | - | - | SILICON | - | - | 1 | 225°C | - | - | - | 110V | Tape & Reel (TR) | 2006 | - | e3 | - | Not For New Designs | 3 (168 Hours) | 4 | - | EAR99 | Matte Tin (Sn) | - | - | - | 8541.29.00.75 | - | - | - | DUAL | FLAT | 260 | - | 220MHz | 40 | MRF6V2150 | - | R-PDFM-F4 | Not Qualified | SINGLE | - | - | ENHANCEMENT MODE | - | SOURCE | 450mA | AMPLIFIER | - | N-CHANNEL | LDMOS | - | - | - | 25dB | - | - | - | - | 110V | 150W | METAL-OXIDE SEMICONDUCTOR | - | - | 50V | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| MRF6V2150NBR1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипPD85035-EAnlielectronics Тип | STMicroelectronics |
Trans RF MOSFET N-CH 40V 8A 3-Pin PowerSO-10RF (Formed lead) Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 25 Weeks | ACTIVE (Last Updated: 8 months ago) | Surface Mount | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | - | 3 | - | - | - | - | 1 | - | - | - | - | - | Tube | - | - | e3 | - | Active | 3 (168 Hours) | 2 | - | EAR99 | Matte Tin (Sn) | 165°C | -65°C | HIGH RELIABILITY | - | - | - | 95W | DUAL | GULL WING | 250 | 8A | 870MHz | 30 | PD85035 | 10 | R-PDSO-G2 | - | - | Single | - | ENHANCEMENT MODE | 95W | SOURCE | 350mA | AMPLIFIER | - | N-CHANNEL | LDMOS | 8A | - | 15V | 17dB | 40W | 8A | 40V | - | - | 15W | METAL-OXIDE SEMICONDUCTOR | - | - | 13.6V | - | - | - | 40V | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| PD85035-E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSD2931-10WAnlielectronics Тип | STMicroelectronics |
Trans RF MOSFET N-CH 125V 20A 4-Pin Case M-174 Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 32 Weeks | - | Screw | M174 | - | 4 | - | - | - | - | 1 | - | - | - | - | - | Tray | - | - | - | - | Active | 3 (168 Hours) | 4 | - | EAR99 | - | 150°C | -65°C | - | - | - | - | 389W | RADIAL | FLAT | - | 20A | 175MHz | - | SD2931 | - | - | - | - | Single | - | ENHANCEMENT MODE | 389W | - | 250mA | - | 125V | - | N-Channel | 20A | - | 20V | 15dB | - | - | 125V | - | - | 150W | METAL-OXIDE SEMICONDUCTOR | - | - | 50V | - | - | - | - | - | - | - | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| SD2931-10W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMCH6644-TL-EAnlielectronics Тип | onsemi |
PCH NCH 4V DRIVE SERIES
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | onsemi | - | - | Bulk | Active | - | - | - | - | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MCH6644-TL-E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBF861B,215Anlielectronics Тип | NXP USA Inc. |
JFET N-CHAN 25V SOT-23
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | TO-236-3, SC-59, SOT-23-3 | YES | - | - | SILICON | - | - | 1 | 150°C | - | - | - | 25V | Tape & Reel (TR) | 2001 | - | e3 | - | Not For New Designs | 1 (Unlimited) | 3 | - | EAR99 | Matte Tin (Sn) | - | - | LOW NOISE | 8541.21.00.95 | - | 15mA | - | DUAL | GULL WING | 260 | - | - | NOT SPECIFIED | BF861 | 3 | R-PDSO-G3 | Not Qualified | SINGLE | - | - | DEPLETION MODE | - | - | - | AMPLIFIER | - | - | N-Channel JFET | - | TO-236AB | - | - | - | - | - | - | 25V | - | JUNCTION | 0.25W | - | - | 2.7 pF | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| BF861B,215 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипCPH3303-TL-EAnlielectronics Тип | onsemi |
PCH 2.5V DRIVE SERIES
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | onsemi | - | - | Bulk | Active | - | - | - | - | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| CPH3303-TL-E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSCH2816-TL-EAnlielectronics Тип | onsemi |
NCH SBD 4V DRIVE SERIES
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | onsemi | - | - | Bulk | Active | - | - | - | - | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SCH2816-TL-E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMRF6V12250HR5Anlielectronics Тип | NXP USA Inc. |
Trans RF MOSFET N-CH 100V 2-Pin Case 465-06 T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | - | SOT-957A | YES | - | - | SILICON | - | - | 1 | 225°C | - | - | Military grade | 100V | Tape & Reel (TR) | 2010 | - | - | - | Active | Not Applicable | 2 | - | EAR99 | - | - | - | - | 8541.29.00.75 | - | - | - | DUAL | FLAT | 260 | - | 1.03GHz | 40 | MRF6V12250 | - | R-CDFM-F2 | - | SINGLE | - | - | ENHANCEMENT MODE | - | SOURCE | 100mA | AMPLIFIER | - | N-CHANNEL | LDMOS | - | - | - | 20.3dB | - | - | - | - | 110V | 275W | METAL-OXIDE SEMICONDUCTOR | - | - | 50V | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| MRF6V12250HR5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N5486Anlielectronics Тип | ON Semiconductor |
IC AMP RF N-CHAN 25V 10MA TO-92
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | LAST SHIPMENTS (Last Updated: 2 days ago) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | - | 3 | 201mg | - | -25V | - | 1 | - | - | - | - | - | Bulk | 2006 | - | e0 | no | Obsolete | 1 (Unlimited) | 3 | Through Hole | EAR99 | Tin/Lead (Sn/Pb) | 150°C | -65°C | - | - | 25V | 30mA | 350mW | BOTTOM | - | 240 | 10mA | 400MHz | 30 | 2N5486 | 3 | - | - | - | Single | - | DEPLETION MODE | 350mW | - | - | AMPLIFIER | 25V | - | N-Channel JFET | 20mA | - | 25V | - | - | - | - | 5pF | - | - | JUNCTION | - | 4 dB | - | 1 pF | - | 15V | - | 10dB | 5.33mm | 5.2mm | 4.19mm | No | No SVHC | Non-RoHS Compliant | Lead Free | ||
| 2N5486 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBF1108,215Anlielectronics Тип | NXP USA Inc. |
IC RF SWITCH SOT143B
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | - | - | TO-253-4, TO-253AA | - | - | - | - | - | - | - | - | - | - | Military grade | 3V | Tape & Reel (TR) | 2008 | - | - | - | Obsolete | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | 10mA | - | - | - | - | - | - | - | BF1108 | 4 | - | - | - | - | - | - | - | - | - | - | - | - | N-Channel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2013-06-14 00:00:00 | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| BF1108,215 |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ