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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Mounting Type | Package / Case | Supplier Device Package | Base Product Number | Brand | Factory Pack QuantityFactory Pack Quantity | Id - Continuous Drain Current | Manufacturer | Maximum Operating Temperature | Mfr | Minimum Operating Temperature | Mounting Styles | NF - Noise Figure | OIP3 - Third Order Intercept | P1dB - Compression Point | Package | Package Type | Part # Aliases | Pd - Power Dissipation | Product Status | Rds On - Drain-Source Resistance | RoHS | Transistor Polarity | Unit Weight | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Voltage Rated | Packaging | Series | Type | Subcategory | Current Rating (Amps) | Technology | Frequency | Pin Count | Operating Frequency | Operating Supply Voltage | Number of Channels | Test Frequency | Operating Supply Current | Output Power | Current - Test | Product Type | Transistor Type | Gain | Channel Type | Power - Output | Noise Figure | Voltage - Test | Product Category |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипAFT26HW050GSR3-NXPAnlielectronics Тип | NXP USA Inc. |
RF N CHANNEL, MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | NXP USA Inc. | - | - | - | - | - | Bulk | - | - | - | Active | - | - | - | - | - | - | - | - | - | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| AFT26HW050GSR3-NXP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMRF18085BLSR3Anlielectronics Тип | Freescale Semiconductor |
RF L BAND, N-CHANNEL
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NI-780S | NI-780S | - | - | - | - | - | - | Freescale Semiconductor | - | - | - | - | - | Bulk | - | - | - | Active | - | - | - | - | - | - | - | 65 V | - | - | - | - | 10μA | - | 1.93GHz ~ 1.99GHz | - | - | - | - | - | - | - | 800 mA | - | N-Channel | 12.5dB | - | 85W | - | 26 V | - | ||
| MRF18085BLSR3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBLA6H1011-600,112-AMPAnlielectronics Тип | Ampleon USA Inc. |
RF PFET, 2-ELEMENT, L BAND, SILI
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | Ampleon USA Inc. | - | - | - | - | - | Tube | - | - | - | Active | - | - | - | - | - | - | - | - | - | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| BLA6H1011-600,112-AMP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBLF177RAnlielectronics Тип | Ampleon USA Inc. |
HF/VHF POWER VDMOS TRANSISTOR (
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | SOT-121B | SOT121B | - | - | - | - | - | - | Ampleon USA Inc. | - | - | - | - | - | Bulk | - | - | - | Active | - | - | - | - | - | - | - | 125 V | - | BLF | - | - | 2.5mA | - | 108MHz | - | - | - | - | - | - | - | 700 mA | - | N-Channel | 19dB | - | 150W | - | 50 V | - | ||
| BLF177R | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBLF7G24LS-160P,112Anlielectronics Тип | NXP USA Inc. |
RF PFET, 2-ELEMENT, S BAND, SILI
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | SOT539B | SOT539B | BLF7G24 | - | - | - | - | - | NXP USA Inc. | - | - | - | - | - | Tube | - | - | - | Active | - | - | - | - | - | - | - | 65 V | - | - | - | - | - | - | 2.3GHz ~ 2.4GHz | - | - | - | - | - | - | - | 1.2 A | - | LDMOS (Dual), Common Source | 18.5dB | - | 30W | - | 28 V | - | ||
| BLF7G24LS-160P,112 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBLP15M9S100GZAnlielectronics Тип | Ampleon USA Inc. |
BLP15M9S100G/SOT1483/REELDP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | SOT-1483-1 | SOT1483-1 | BLP15 | - | - | - | - | - | Ampleon USA Inc. | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | - | - | - | 65 V | - | BLP | - | - | 1.4μA | - | 1.4GHz | - | - | - | - | - | - | - | 900 mA | - | LDMOS (Dual), Common Source | 18dB | - | 100W | - | 32 V | - | ||
| BLP15M9S100GZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBLC8G27LS-140AV518-AMPAnlielectronics Тип | Ampleon USA Inc. |
LDMOS RF POWER TRANSISTOR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | SOT-1275-1 | SOT-1275-1 | - | - | - | - | - | - | Ampleon USA Inc. | - | - | - | - | - | Bulk | - | - | - | Active | - | - | - | - | - | - | - | 65 V | - | BLC | - | - | 1.4μA | - | 2.496GHz ~ 2.69GHz | - | - | - | - | - | - | - | 320 mA | - | LDMOS (Dual), Common Source | 14.5dB | - | 140W | - | 28 V | - | ||
| BLC8G27LS-140AV518-AMP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRF3L05250CB4Anlielectronics Тип | STMicroelectronics |
250 W 28/32 V RF POWER LDMOS TRA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | LBB | LBB | - | STMicroelectronics | 100 | - | STMicroelectronics | + 200 C | STMicroelectronics | - | SMD/SMT | - | - | - | - | LBB | - | 250 W | Active | 1 Ohms | Details | N-Channel | 0.084658 oz | 90 V | 10 V | 2.5 V | 90 V | MouseReel | - | RF Power MOSFET | MOSFETs | 1μA | Si | 1GHz | 5 | 1 MHz | - | 1 Channel | - | - | 250 W | 100 mA | RF MOSFET Transistors | LDMOS | 18dB | N | 250W | - | 28 V | RF MOSFET Transistors | ||
| RF3L05250CB4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипA3G26D055N-2515Anlielectronics Тип | NXP USA Inc. |
RF REFERENCE CIRCUIT 55W 2515MHZ
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | 6-LDFN Exposed Pad | 6-PDFN (7x6.5) | - | - | - | - | - | - | NXP USA Inc. | - | - | - | - | - | Bulk | - | - | - | Active | - | - | - | - | - | - | - | 125 V | - | - | - | - | - | - | 100MHz ~ 2.69GHz | - | - | - | - | - | - | - | 40 mA | - | GaN | 13.9dB | - | 8W | - | 48 V | - | ||
| A3G26D055N-2515 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRF5L08350CB4Anlielectronics Тип | STMicroelectronics |
400 W, 50 V, 0.4 TO 1 GHZ RF POW
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | B4E | B4E | - | STMicroelectronics | 120 | 2.5 A | STMicroelectronics | + 200 C | STMicroelectronics | - | SMD/SMT | - | - | - | - | B4E | - | - | Active | 1 Ohms | Details | N-Channel | 0.141096 oz | 110 V | 10 V | 3 V | 110 V | MouseReel | - | RF Power MOSFET | MOSFETs | 1μA | Si | 1GHz | 5 | 1 GHz | - | 1 Channel | - | - | 400 W | 200 mA | RF MOSFET Transistors | LDMOS | 19dB | - | 400W | - | 50 V | RF MOSFET Transistors | ||
| RF5L08350CB4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипA3G26D055N-2110Anlielectronics Тип | NXP USA Inc. |
RF REFERENCE CIRCUIT 25W 2110-22
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | 6-LDFN Exposed Pad | 6-PDFN (7x6.5) | - | NXP Semiconductors | 1 | - | NXP | - | NXP USA Inc. | - | - | - | - | - | Bulk | - | 935430794598 | - | Active | - | - | - | - | - | - | - | 125 V | - | - | - | Development Tools | - | - | 100MHz ~ 2.69GHz | - | - | - | - | - | - | - | 40 mA | RF Development Tools | GaN | 13.9dB | - | 8W | - | 48 V | RF Development Tools | ||
| A3G26D055N-2110 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMRF24G300HS-2UPAnlielectronics Тип | NXP USA Inc. |
RF REFERENCE CIRCUIT 600W 2400MH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NI-780S-4L | NI-780S-4L | - | NXP Semiconductors | 1 | - | NXP | - | NXP USA Inc. | - | - | - | - | - | Bulk | - | - | - | Active | - | - | - | - | - | - | - | 125 V | - | - | - | - | - | - | 2.4GHz ~ 2.5GHz | - | - | - | - | - | - | - | - | - | GaN | 15.3dB | - | 336W | - | 48 V | NXP Semiconductors | ||
| MRF24G300HS-2UP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRF2L16180CB4Anlielectronics Тип | STMicroelectronics |
180 W, 28 V, 1.3 TO 1.6 GHZ RF P
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | B4E | B4E | - | STMicroelectronics | 120 | - | STMicroelectronics | + 200 C | STMicroelectronics | - | SMD/SMT | - | - | - | - | B4E | - | - | Active | 1 Ohms | Details | N-Channel | 0.141096 oz | 65 V | 10 V | 2.5 V | 65 V | MouseReel | - | RF Power MOSFET | MOSFETs | 1μA | Si | 1.6GHz | 4 | 1.6 GHz | - | 1 Channel | - | - | 180 W | 600 mA | RF MOSFET Transistors | LDMOS | 14dB | - | 180W | - | 28 V | RF MOSFET Transistors | ||
| RF2L16180CB4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBLM10D3740-35ABZAnlielectronics Тип | Ampleon USA Inc. |
BLM10D3740-35AB/SOT1462/REELDP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | 20-QFN Exposed Pad | 20-PQFN (8x8) | - | - | - | - | - | - | Ampleon USA Inc. | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | - | - | - | 65 V | - | BLM | - | - | 1.4μA | - | 3.7GHz ~ 4GHz | - | - | - | - | - | - | - | 42 mA | - | LDMOS | 34.2dB | - | - | - | 28 V | - | ||
| BLM10D3740-35ABZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSAV-551Anlielectronics Тип | Mini-Circuits |
RF MOSFET E-PHEMT 3V SC70-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | SC-82A, SOT-343 | MMM1362 | - | Mini-Circuits | 1000 | - | Mini-Circuits | + 85 C | Mini-Circuits | - 40 C | SMD/SMT | 0.6 dB | 24.4 dBm | 20 dBm | - | - | - | 360 mW | Active | - | Details | - | 0.106448 oz | - | - | - | 5 V | MouseReel | - | Low Noise Amplifiers | Wireless & RF Integrated Circuits | - | Si | 45MHz ~ 6GHz | - | 45 MHz to 6 GHz | 4 V | 1 Channel | 2 GHz | 15 mA | - | 15 mA | RF Amplifier | E-pHEMT | 20.9dB | - | 20dBm | 1.8dB @ 5.8GHz | 3 V | RF Amplifier | ||
| SAV-551 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипA3G26D055N-1805Anlielectronics Тип | NXP USA Inc. |
RF REFERENCE CIRCUIT 25W 1805-18
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | 6-LDFN Exposed Pad | 6-PDFN (7x6.5) | - | NXP Semiconductors | 1 | - | NXP | - | NXP USA Inc. | - | - | - | - | - | Bulk | - | 935430795598 | - | Active | - | - | - | - | - | - | - | 125 V | - | - | - | Development Tools | - | - | 100MHz ~ 2.69GHz | - | - | - | - | - | - | - | 40 mA | RF Development Tools | GaN | 13.9dB | - | 8W | - | 48 V | RF Development Tools | ||
| A3G26D055N-1805 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипA3G26D055NT4Anlielectronics Тип | NXP USA Inc. |
RF GAN MOSFET AIRFAST 8W 48V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | 6-LDFN Exposed Pad | 6-PDFN (7x6.5) | - | NXP Semiconductors | 2500 | 3 mA | NXP | + 150 C | NXP USA Inc. | - 55 C | SMD/SMT | - | - | - | - | - | 935402445528 | - | Active | - | Details | Dual N-Channel | - | 125 V | - 8 V | - 3.5 V | 125 V | Cut Tape | - | RF Power MOSFET | MOSFETs | - | GaN Si | 100MHz ~ 2.69GHz | - | 100 MHz to 2690 MHz | - | 2 Channel | - | - | 8 W | 40 mA | RF MOSFET Transistors | GaN | 13.9dB | - | 8W | - | 48 V | RF MOSFET Transistors | ||
| A3G26D055NT4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипTM-10Anlielectronics Тип | Ampleon USA Inc. |
TM-10 - 10W BROADBAND RF POWER G
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | SOT-1227B | SOT1227B | - | - | - | - | - | - | Ampleon USA Inc. | - | - | - | - | - | Tray | - | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | GaN HEMT | - | - | 10W | - | - | - | ||
| TM-10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBLF175Anlielectronics Тип | Rochester Electronics, LLC |
BLF175 - HF/VHF POWER VDMOS TRAN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | SOT-123A | CRFM4 | - | - | - | - | - | - | Rochester Electronics, LLC | - | - | - | - | - | Tray | - | - | - | Active | - | - | - | - | - | - | - | 125 V | - | - | - | - | 4A | - | 108MHz | - | - | - | - | - | - | - | 30 mA | - | N-Channel | 20dB | - | 30W | - | 50 V | - | ||
| BLF175 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипTAV1-541Anlielectronics Тип | Mini-Circuits |
RF MOSFET E-PHEMT 3V TE2769
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | 4-SMD, No Lead | TE2769 | - | Mini-Circuits | 1000 | - | Mini-Circuits | + 85 C | Mini-Circuits | - 40 C | SMD/SMT | 0.7 dB | 33.9 dBm | 20.7 dBm | - | - | - | 360 mW | Active | - | Details | - | - | - | - | - | 5 V | Cut Tape | - | Low Noise Amplifiers | Wireless & RF Integrated Circuits | - | Si | 45MHz ~ 6GHz | - | 45 MHz to 6 GHz | 4 V | - | 2 GHz | 60 mA | - | 60 mA | RF Amplifier | E-pHEMT | 18.6dB | - | 18.6dBm | 1.4dB @ 5.8GHz | 3 V | RF Amplifier | ||
| TAV1-541 |
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