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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Package / Case | Supplier Device Package | Brand | Factory Pack QuantityFactory Pack Quantity | Id - Continuous Drain Current | Manufacturer | Maximum Operating Temperature | Mfr | Minimum Operating Temperature | Mounting Styles | Package | Part # Aliases | Product Status | Rds On - Drain-Source Resistance | RoHS | Shipping Restrictions | Tool Is For Evaluation Of | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Voltage Rated | Packaging | Series | Type | Subcategory | Current Rating (Amps) | Technology | Frequency | Operating Frequency | Number of Channels | Output Power | Current - Test | Product Type | Transistor Type | Gain | Power - Output | Noise Figure | Voltage - Test | Product | Product Category |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипA5G35H110N-3400Anlielectronics Тип | NXP USA Inc. |
A5G35H110N 3400-3600 MHZ REFEREN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6-LDFN Exposed Pad | 6-PDFN (7x6.5) | NXP Semiconductors | 1 | - | NXP | + 150 C | NXP USA Inc. | - 55 C | - | Bulk | 935436625598 | Active | - | N | - | A5G35H110N | - | - | - | - | 125 V | - | - | RF Transistor | Development Tools | - | - | 3.3GHz ~ 3.7GHz | - | - | - | 70 mA | RF Development Tools | - | 15.3dB | 15.1W | - | 48 V | Evaluation Boards | RF Development Tools | ||
| A5G35H110N-3400 | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMWT-LN600Anlielectronics Тип | Microwave Technology Inc. |
26 GHZ SUPER LOW NOISE PHEMT
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Die | Die | - | - | 175 mA | - | + 150 C | Microwave Technology Inc. | - | - | Case | - | Active | - | - | - | - | - | 4.5 V | - | - | 5.5 V | - | - | - | - | - | GaAs | 26GHz | 26 GHz | - | 20 dBm | 100 mA | - | pHEMT FET | 12dB | 20dBm | 0.5dB @ 12GHz | 3 V | - | - | ||
| MWT-LN600 | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипCLF1G0035-100PAnlielectronics Тип | Rochester Electronics, LLC |
CLF1G0035-100 - 100W BROADBAND R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | SOT-1228A | LDMOST | - | - | - | - | - | Rochester Electronics, LLC | - | - | Bulk | - | Obsolete | - | - | - | - | - | - | - | - | 150 V | - | - | - | - | - | - | 3.5GHz | - | - | - | 330 mA | - | HEMT | 12.5dB | 100W | - | 50 V | - | - | ||
| CLF1G0035-100P | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMRF300AN-27MHZAnlielectronics Тип | NXP USA Inc. |
MRF300AN REF BRD 27MHZ 330W
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 3-SIP | 3-SIL | NXP Semiconductors | 1 | - | NXP | - | NXP USA Inc. | - | - | Bulk | 935398667598 | Active | - | - | - | MRF300AN | - | - | - | - | 133 V | - | - | RF Transistor | Development Tools | 10μA | - | 1.8MHz ~ 250MHz | - | - | - | 100 mA | RF Development Tools | LDMOS | 28.2dB | 300W | - | 50 V | Reference Boards | RF Development Tools | ||
| MRF300AN-27MHZ | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипART1K6FHSUAnlielectronics Тип | Ampleon USA Inc. |
ART1K6FHS/SOT539/TRAY
Сборник данных
Сравнение
| Min.:1 Mult.:1 | SOT-539BN | SOT539BN | - | - | - | - | - | Ampleon USA Inc. | - | - | Tray | - | Active | - | - | - | - | - | - | - | - | 177 V | - | ART | - | - | 1.2μA | - | 1MHz ~ 425MHz | - | - | - | 600 mA | - | LDMOS (Dual), Common Source | 28dB | 1600W | - | 65 V | - | - | ||
| ART1K6FHSU | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипA5G38H045N-3700Anlielectronics Тип | NXP USA Inc. |
A5G38H045N 3700-3980 MHZ REFEREN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6-LDFN Exposed Pad | 6-PDFN (7x6.5) | - | - | - | - | - | NXP USA Inc. | - | - | Bulk | - | Active | - | - | - | A5G38H045N | - | - | - | - | - | - | - | RF Transistor | - | - | - | - | - | - | - | - | - | - | - | 5W | - | - | Evaluation Boards | - | ||
| A5G38H045N-3700 | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипA5G23H065NT4Anlielectronics Тип | NXP USA Inc. |
AIRFAST RF POWER GAN TRANSISTOR,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6-LDFN Exposed Pad | 6-PDFN (7x6.5) | - | - | 5.2 mA | - | + 150 C | NXP USA Inc. | - 55 C | SMD/SMT | Tape & Reel (TR) | - | Active | - | - | - | - | Dual N-Channel | 125 V | - | - | 125 V | - | - | - | - | - | GaN Si | 2.3GHz ~ 2.4GHz | 2300 MHz to 2400 MHz | - | 8.8 W | 30 mA | - | - | 15.5dB | 8.8W | - | 48 V | - | - | ||
| A5G23H065NT4 | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBLM9D3336-14AMZAnlielectronics Тип | Ampleon USA Inc. |
BLM9D3336-14AMZ/REEL
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 20-VLGA Exposed Pad | 20-LGA (7x7) | - | - | - | - | - | Ampleon USA Inc. | - | - | - | - | Active | - | - | - | - | - | - | - | - | 65 V | - | - | - | - | 1.4μA | - | 3.3GHz ~ 3.65GHz | - | - | - | 38 mA | - | LDMOS | 32.4dB | 14W | - | 28 V | - | - | ||
| BLM9D3336-14AMZ | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипART700FHSUAnlielectronics Тип | Ampleon USA Inc. |
ART700FHSU/SOT1214/TRAY
Сборник данных
Сравнение
| Min.:1 Mult.:1 | SOT-1214B | LDMOST | - | - | - | - | - | Ampleon USA Inc. | - | - | Tray | - | Active | - | - | - | - | - | - | - | - | 177 V | - | - | - | - | 1.4μA | - | 1MHz ~ 450MHz | - | - | - | 1.2 A | - | LDMOS (Dual), Common Source | 28.6dB | 700W | - | 55 V | - | - | ||
| ART700FHSU | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипCLL3H0914L-700UAnlielectronics Тип | Ampleon USA Inc. |
CLL3H0914L-700U
Сборник данных
Сравнение
| Min.:1 Mult.:1 | SOT-502A | SOT502A | - | - | - | - | - | Ampleon USA Inc. | - | - | Tray | - | Active | - | - | - | - | - | - | - | - | 150 V | - | CLL | - | - | - | - | 900MHz ~ 1.4GHz | - | - | - | 500 mA | - | N-Channel | 17dB | 700W | - | 50 V | - | - | ||
| CLL3H0914L-700U | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSA2T18H450W19SR6Anlielectronics Тип | NXP Semiconductors |
A2T18H450 - AIRFAST RF POWER LDM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NI-1230S-4S4S | NI-1230S-4S4S | - | - | - | - | - | NXP Semiconductors | - | - | Bulk | - | Obsolete | - | - | - | - | - | - | - | - | 65 V | - | - | - | - | 10μA | - | 1.805GHz ~ 1.88GHz | - | - | - | 800 mA | - | LDMOS (Dual) | 16.6dB | 89W | - | 30 V | - | - | ||
| SA2T18H450W19SR6 | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипA3G26D055N-2600Anlielectronics Тип | NXP USA Inc. |
A3G26D055N 2515-2675 MHZ REFEREN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6-LDFN Exposed Pad | 6-PDFN (7x6.5) | NXP Semiconductors | 1 | - | NXP | - | NXP USA Inc. | - | - | Bulk | 935427885598 | Active | - | N | - | A3G26D055N | - | - | - | - | 125 V | - | - | RF Transistor | Development Tools | - | - | 100MHz ~ 2.69GHz | - | - | - | 40 mA | RF Development Tools | - | 13.9dB | 8W | - | 48 V | Evaluation Boards | RF Development Tools | ||
| A3G26D055N-2600 | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипA5G35S004N-3400Anlielectronics Тип | NXP USA Inc. |
A5G35S004N 3400-4300 MHZ REFEREN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6-LDFN Exposed Pad | 6-PDFN (4x4.5) | - | - | - | - | - | NXP USA Inc. | - | - | Bulk | - | Active | - | - | - | A5G35S004N | - | - | - | - | 125 V | - | - | RF Transistor | - | - | - | 3.3GHz ~ 4.3GHz | - | - | - | 12 mA | - | - | 16.9dB | 24.5dBm | - | 48 V | Evaluation Boards | - | ||
| A5G35S004N-3400 | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипART1K6FHGJAnlielectronics Тип | Ampleon USA Inc. |
ART1K6FHG/SOT1248/REELDP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | SOT-539AN | SOT539AN | - | - | - | - | - | Ampleon USA Inc. | - | - | - | - | Active | - | - | - | - | - | - | - | - | 177 V | - | ART | - | - | 1.2μA | - | 1MHz ~ 425MHz | - | - | - | 600 mA | - | LDMOS (Dual), Common Source | 28dB | 1600W | - | 65 V | - | - | ||
| ART1K6FHGJ | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипA5G35H120NT2Anlielectronics Тип | NXP USA Inc. |
AIRFAST RF POWER GAN TRANSISTOR,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10-PowerLDFN | 10-DFN (7x10) | NXP Semiconductors | 2000 | 10 mA | NXP | + 150 C | NXP USA Inc. | - 55 C | SMD/SMT | Tape & Reel (TR) | 935432729518 | Active | - | Details | This product may require additional documentation to export from the United States. | - | N-Channel | 125 V | - 8 V | - 4.6 V | 125 V | Cut Tape | - | RF Power MOSFET | MOSFETs | - | GaN Si | 3.3GHz ~ 3.7GHz | 3300 MHz to 3700 MHz | 1 Channel | 18 W | 70 mA | RF MOSFET Transistors | - | 14.1dB | 18W | - | 48 V | - | RF MOSFET Transistors | ||
| A5G35H120NT2 | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBLP9H10S-850AVTYAnlielectronics Тип | Ampleon USA Inc. |
BLP9H10S-850AVTY/OMP-1230/REELD
Сборник данных
Сравнение
| Min.:1 Mult.:1 | OMP-1230-6F-1 | OMP-1230-6F-1 | - | - | - | - | - | Ampleon USA Inc. | - | - | - | - | Active | - | - | - | - | - | - | - | - | 105 V | - | BLP | - | - | 2.8μA | - | 617MHz ~ 960MHz | - | - | - | 1.4 A | - | LDMOS (Dual), Common Source | 17.8dB | 850W | - | 50 V | - | - | ||
| BLP9H10S-850AVTY | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBLC10G22XS-401AVTYAnlielectronics Тип | Ampleon USA Inc. |
BLC10G22XS-401AVTY/SOT1275/REELD
Сборник данных
Сравнение
| Min.:1 Mult.:1 | SOT-1275-1 | DFM6 | - | - | - | - | - | Ampleon USA Inc. | - | - | - | - | Active | - | - | - | - | - | - | - | - | 65 V | - | BLC | - | - | 1.4μA | - | 2.11GHz ~ 2.2GHz | - | - | - | 1.085 A | - | LDMOS (Dual), Common Source | 15dB | 400W | - | 32 V | - | - | ||
| BLC10G22XS-401AVTY | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBLM9D3740-16AMZAnlielectronics Тип | Ampleon USA Inc. |
BLM9D3740-16AMZ/REEL
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 20-VLGA Exposed Pad | 20-LGA (7x7) | - | - | - | - | - | Ampleon USA Inc. | - | - | - | - | Active | - | - | - | - | - | - | - | - | 65 V | - | - | - | - | 1.4μA | - | 3.7GHz ~ 4GHz | - | - | - | 38 mA | - | LDMOS | 31.2dB | 16W | - | 28 V | - | - | ||
| BLM9D3740-16AMZ | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипON5464JAnlielectronics Тип | Nexperia USA Inc. |
AUTO TRENCH 6 (SOT226)
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | Nexperia USA Inc. | - | - | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| ON5464J | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMRF9030MBR1Anlielectronics Тип | Freescale Semiconductor |
RF ULTRA HIGH FREQUENCY BAND, N-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-272BC | TO-272-2 | - | - | - | - | - | Freescale Semiconductor | - | - | Bulk | - | Active | - | - | - | - | - | - | - | - | 65 V | - | - | - | - | 10μA | - | 1GHz | - | - | - | 250 mA | - | N-Channel | 20dB | 30W | - | 26 V | - | - | ||
| MRF9030MBR1 |
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