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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Mounting Type | Package / Case | Supplier Device Package | Base Product Number | Brand | Channel Mode | Current - Continuous Drain (Id) @ 25℃ | Drive Voltage (Max Rds On, Min Rds On) | Factory Pack QuantityFactory Pack Quantity | Forward Transconductance - Min | Id - Continuous Drain Current | Manufacturer | Maximum Operating Temperature | Mfr | Minimum Operating Temperature | Mounting Styles | Package | Part # Aliases | Pd - Power Dissipation | Power Dissipation (Max) | Product Status | Qg - Gate Charge | Rds On - Drain-Source Resistance | RoHS | Transistor Polarity | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Unit Weight | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Operating Temperature | Packaging | Series | Capacitance | Subcategory | Technology | Configuration | Number of Channels | Voltage | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Rise Time | Drain to Source Voltage (Vdss) | Vgs (Max) | Product Type | Transistor Type | Capacitance @ Vr, F | FET Feature | Product Category |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипRMP7N80TIAnlielectronics Тип | Rectron |
MOSFET, Rds-on - 1600mOhms, Total Gate Charge typ - 27nQ, Max Power Dissipation - 49W, Vgs(th) - 3V, Polarity - N-Channel
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-220F-3 | - | - | Rectron | Enhancement | - | - | 1000 | 5 S | 7 A | RECTRON | + 150 C | - | - 55 C | Through Hole | - | - | 49 W | - | - | 35 nC | 2 Ohms | Y | N-Channel | 50 ns | 35 ns | 0.068784 oz | 800 V | - 30 V, + 30 V | 2 V | - | Case - TO-220F | - | Input Capacitance (Ciss) - 1300pF | MOSFETs | Si | Single | 1 Channel | Vdss - 800V | - | - | - | - | - | - | - | - | - | - | 100 ns | - | - | MOSFET | 1 N-Channel | - | - | MOSFET | ||
| RMP7N80TI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRM60P04Y-TAnlielectronics Тип | Rectron |
MOSFET D-PAK MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | SOT-23-3 | - | - | Rectron | Enhancement | - | - | 2500 | 10 S | 4 A | Rectron | + 150 C | - | - 55 C | SMD/SMT | - | RM60P04Y | 1.5 W | - | - | 25 nC | 120 mOhms | Details | P-Channel | 32 ns | 8 ns | 0.000282 oz | 60 V | - 20 V, + 20 V | 3 V | - | Reel | - | - | MOSFETs | Si | Single | 1 Channel | - | - | - | - | - | - | - | - | - | - | - | 4 ns | - | - | MOSFET | 1 P-Channel | - | - | MOSFET | ||
| RM60P04Y-T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N7002KAnlielectronics Тип | Rectron |
MOSFET SOT-23 MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (Type WX) | DSC06 | Rectron | Enhancement | 300mA (Ta) | 5V, 10V | 3000 | 0.1 S | 300 mA | Rectron | + 150 C | Diodes Incorporated | - 55 C | SMD/SMT | Tape & Reel (TR);Cut Tape (CT);Digi-Reel®; | - | 350 mW | 350mW (Ta) | Active | 3 nC | 3 Ohms | Details | N-Channel | 17 ns | 10 ns | 0.000282 oz | 60 V | - 20 V, + 20 V | 1 V | -55°C ~ 150°C (TJ) | Reel | - | - | MOSFETs | Schottky | Single | 1 Channel | - | Fast Recovery =< 500ns, > 200mA (Io) | 200 µA @ 650 V | 1.5 V @ 6 A | -55°C ~ 175°C | N-Channel | 2Ohm @ 500mA, 10V | 1.9V @ 250µA | 50 pF @ 25 V | 650 V | 6A | 50 ns | 60 V | ±20V | MOSFET | 1 N-Channel | 278pF @ 100mV, 1MHz | - | MOSFET | ||
| 2N7002K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRM2020ES9-TAnlielectronics Тип | Rectron |
MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Rectron | - | - | - | 3000 | - | - | Rectron | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | - | - | - | - | - | - | Reel | - | - | MOSFETs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | MOSFET | - | - | - | MOSFET | ||
| RM2020ES9-T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRM3407-TAnlielectronics Тип | Rectron |
MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Rectron | - | - | - | 3000 | - | - | Rectron | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | - | - | - | - | - | - | Reel | - | - | MOSFETs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | MOSFET | - | - | - | MOSFET | ||
| RM3407-T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRM5A1P30S6-TAnlielectronics Тип | Rectron |
MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Rectron | - | - | - | 3000 | - | - | Rectron | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | - | - | - | - | - | - | Reel | - | - | MOSFETs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | MOSFET | - | - | - | MOSFET | ||
| RM5A1P30S6-T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRM12P30S8-TAnlielectronics Тип | Rectron |
MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Rectron | - | - | - | 4000 | - | - | Rectron | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | - | - | - | - | - | - | Reel | - | - | MOSFETs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | MOSFET | - | - | - | MOSFET | ||
| RM12P30S8-T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRM12N650T1Anlielectronics Тип | Rectron |
MOSFET TO-220F MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | TO-220F-3 | - | - | Rectron | Enhancement | - | - | 1000 | - | 11.5 A | Rectron | + 150 C | - | - 55 C | Through Hole | - | - | 32.6 W | - | - | 19 nC | 360 mOhms | Details | N-Channel | 58 ns | 11 ns | 0.068784 oz | 650 V | - 30 V, + 30 V | 3 V | - | Tube | - | - | MOSFETs | Si | Single | 1 Channel | - | - | - | - | - | - | - | - | - | - | - | 8 ns | - | - | MOSFET | 1 N-Channel | - | - | MOSFET | ||
| RM12N650T1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRM21N700T1Anlielectronics Тип | Rectron |
MOSFET TO-220F MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | TO-220F-3 | - | - | Rectron | Enhancement | - | - | 1000 | 17.5 S | 21 A | Rectron | + 150 C | - | - 55 C | Through Hole | - | - | 34 W | - | - | 70 nC | 190 mOhms | Details | N-Channel | 61 ns | 11 ns | 0.068784 oz | 700 V | - 30 V, + 30 V | 2.5 V | - | Tube | - | - | MOSFETs | Si | Single | 1 Channel | - | - | - | - | - | - | - | - | - | - | - | 6 ns | - | - | MOSFET | 1 N-Channel | - | - | MOSFET | ||
| RM21N700T1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRM9926-TAnlielectronics Тип | Rectron |
MOSFET SOP-8 MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | SOP-8 | - | - | Rectron | Enhancement | - | - | 2500 | 20 S | 6 A | Rectron | + 150 C | - | - 55 C | SMD/SMT | - | RM9926 | 1.25 W | - | - | 10 nC | 28 mOhms | Details | N-Channel | 15 ns | 8 ns | 0.002926 oz | 20 V | - 10 V, + 10 V | 500 mV | - | Reel | - | - | MOSFETs | Si | Dual | 2 Channel | - | - | - | - | - | - | - | - | - | - | - | 9 ns | - | - | MOSFET | 2 N-Channel | - | - | MOSFET | ||
| RM9926-T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRM4435-TAnlielectronics Тип | Rectron |
MOSFET SOP-8 MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | SOP-8 | - | - | Rectron | Enhancement | - | - | 2500 | 10 S | 9.1 A | Rectron | + 150 C | - | - 55 C | SMD/SMT | - | RM4435 | 3.1 W | - | - | 30 nC | 20 mOhms | Details | P-Channel | 110 ns | 10 ns | 0.002926 oz | 30 V | - 20 V, + 20 V | 3 V | - | Reel | - | - | MOSFETs | Si | Single | 1 Channel | - | - | - | - | - | - | - | - | - | - | - | 15 ns | - | - | MOSFET | 1 P-Channel | - | - | MOSFET | ||
| RM4435-T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRM8N650HD-TAnlielectronics Тип | Rectron |
MOSFET D2-PAK MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | TO-263-3 | - | - | Rectron | Enhancement | - | - | 800 | 5.5 S | 8 A | Rectron | + 150 C | - | - 55 C | SMD/SMT | - | RM8N650HD | 80 W | - | - | 22 nC | 540 mOhms | Details | N-Channel | 55 ns | 5.5 ns | 0.139332 oz | 650 V | - 30 V, + 30 V | 2.5 V | - | Reel | - | - | MOSFETs | Si | Single | 1 Channel | - | - | - | - | - | - | - | - | - | - | - | 3.5 ns | - | - | MOSFET | 1 N-Channel | - | - | MOSFET | ||
| RM8N650HD-T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRM8N650LD-TAnlielectronics Тип | Rectron |
MOSFET D-PAK MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | TO-252-3 | - | - | Rectron | Enhancement | - | - | 2500 | 5.5 S | 8 A | Rectron | + 150 C | - | - 55 C | SMD/SMT | - | RM8N650LD | 80 W | - | - | 22 nC | 540 mOhms | Details | N-Channel | 55 ns | 5.5 ns | 0.011640 oz | 650 V | - 30 V, + 30 V | 2.5 V | - | Reel | - | - | MOSFETs | Si | Single | 1 Channel | - | - | - | - | - | - | - | - | - | - | - | 3.5 ns | - | - | MOSFET | 1 N-Channel | - | - | MOSFET | ||
| RM8N650LD-T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRM15P55LD-TAnlielectronics Тип | Rectron |
MOSFET D-PAK MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | TO-252-2 | - | - | Rectron | Enhancement | - | - | 2500 | 16 S | 15 A | Rectron | + 175 C | - | - 55 C | SMD/SMT | - | RM15P55LD | 35 W | - | - | 26 nC | 75 mOhms | Details | P-Channel | 65 ns | 8 ns | 0.011640 oz | 55 V | - 20 V, + 20 V | 3.5 V | - | Reel | - | - | MOSFETs | Si | Single | 1 Channel | - | - | - | - | - | - | - | - | - | - | - | 9 ns | - | - | MOSFET | 1 P-Channel | - | - | MOSFET | ||
| RM15P55LD-T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRMP7N60T2Anlielectronics Тип | Rectron |
MOSFET TO-220 MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Rectron | - | - | - | 1000 | - | - | Rectron | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | - | - | - | - | - | - | Tube | - | - | MOSFETs | Si | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | MOSFET | - | - | - | MOSFET | ||
| RMP7N60T2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRMP6N70TIAnlielectronics Тип | Rectron |
MOSFET TO-220F MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Rectron | - | - | - | 1000 | - | - | Rectron | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | - | - | - | - | - | - | Tube | - | - | MOSFETs | Si | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | MOSFET | - | - | - | MOSFET | ||
| RMP6N70TI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRM6N800LD-TAnlielectronics Тип | Rectron |
MOSFET D-PAK MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | TO-252-3 | - | - | Rectron | Enhancement | - | - | 2500 | 6 S | 6 A | Rectron | + 150 C | - | - 55 C | SMD/SMT | - | RM6N800LD | 98 W | - | - | 24 nC | 900 mOhms | Details | N-Channel | 53 ns | 10 ns | 0.011640 oz | 800 V | - 30 V, + 30 V | 3 V | - | Reel | - | - | MOSFETs | Si | Single | 1 Channel | - | - | - | - | - | - | - | - | - | - | - | 5 ns | - | - | MOSFET | 1 N-Channel | - | - | MOSFET | ||
| RM6N800LD-T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRM4606S8-TAnlielectronics Тип | Rectron |
MOSFET SOP-8 MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | SOP-8 | - | - | Rectron | Enhancement | - | - | 2500 | 15 S, 10 S | 6.5 A, 7 A | Rectron | + 150 C | - | - 55 C | SMD/SMT | - | RM4606S8 | 2 W | - | - | 13 nC, 9.2 nC | 30 mOhms, 33 mOhms | Details | N-Channel, P-Channel | 14.5 ns, 19 ns | 4.5 ns, 7.5 ns | 0.002926 oz | 30 V | - 20 V, + 20 V | 1 V, 2.5 V | - | Reel | - | - | MOSFETs | Si | Dual | 2 Channel | - | - | - | - | - | - | - | - | - | - | - | 2.5 ns, 5.5 ns | - | - | MOSFET | 1 N-Channel, 1 P-Channel | - | - | MOSFET | ||
| RM4606S8-T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRM30P55LD-TAnlielectronics Тип | Rectron |
MOSFET D-PAK MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | TO-252-2 | - | - | Rectron | Enhancement | - | - | 2500 | 8 S | 30 A | Rectron | + 175 C | - | - 55 C | SMD/SMT | - | RM30P55LD | 65 W | - | - | 56 nC | 40 mOhms | Details | P-Channel | 38 ns | 12 ns | 0.011640 oz | 55 V | - 20 V, + 20 V | 4 V | - | Reel | - | - | MOSFETs | Si | Single | 1 Channel | - | - | - | - | - | - | - | - | - | - | - | 15 ns | - | - | MOSFET | 1 P-Channel | - | - | MOSFET | ||
| RM30P55LD-T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRMP8N70T2Anlielectronics Тип | Rectron |
MOSFET, Rds-on - 1300mOhms, Total Gate Charge typ - 45nQ, Max Power Dissipation - 147W, Vgs(th) - 3V, Polarity - N-Channel
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-220-3 | - | - | Rectron | Enhancement | - | - | 1000 | 7 S | 8 A | RECTRON | + 150 C | - | - 55 C | Through Hole | - | - | 147 W | - | - | 60 nC | 1.6 Ohms | Y | N-Channel | 130 ns | 35 ns | 0.068784 oz | 700 V | - 30 V, + 30 V | 2 V | - | Case - TO-220 | - | Input Capacitance (Ciss) - 1050pF | MOSFETs | Si | Single | 1 Channel | Vdss - 700V | - | - | - | - | - | - | - | - | - | - | 80 ns | - | - | MOSFET | 1 N-Channel | - | - | MOSFET | ||
| RMP8N70T2 |
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