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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Number of Terminals Transistor Element Material Base Product Number Brand Channel Mode Continuous Drain Current Drain Current-Max (ID) Drain Efficiency (Typ) Drain Source Voltage (Max) Factory Pack QuantityFactory Pack Quantity Forward Transconductance - Min Frequency(Max) Id - Continuous Drain Current Ihs Manufacturer Input Capacitance (Typ)@Vds Manufacturer Manufacturer Part Number Maximum Operating Temperature Minimum Operating Temperature Mounting Mounting Styles Number of Elements Operating Temp Range Operating Temperature-Max Output Power (Max) Package Body Material Package Description Package Shape Package Style Package Type Part Life Cycle Code Pd - Power Dissipation Power Dissipation (Max) Power Gain (Typ)@Vds Rad Hardened Rds On - Drain-Source Resistance Reflow Temperature-Max (s) Risk Rank RoHS Rohs Code Transistor Polarity Unit Weight Usage Level Vds - Drain-Source Breakdown Voltage Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Packaging Series Pbfree Code Part Status ECCN Code Type Max Operating Temperature Min Operating Temperature Additional Feature HTS Code Subcategory Max Power Dissipation Technology Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Frequency Pin Count JESD-30 Code Qualification Status Operating Frequency Configuration Number of Channels ELV Operating Mode Case Connection Output Power Current - Test Transistor Application Polarity/Channel Type Product Type Continuous Drain Current (ID) Gate to Source Voltage (Vgs) Gain Forward Current-Max Max Frequency Drain Current-Max (Abs) (ID) Screening Level DS Breakdown Voltage-Min Channel Type Power - Output FET Technology Power Dissipation-Max (Abs) Voltage - Test Feedback Cap-Max (Crss) Highest Frequency Band Power Dissipation Ambient-Max Frequency (Min) Power Gain-Min (Gp) Product Category Radiation Hardening Lead Free
MACOM MRF-141
Mfr. Тип
MRF-141
Anlielectronics Тип

MACOM
Trans RF MOSFET N-CH 65V 16A 4-Pin Case 211-11
Сборник данных Сравнение
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    Mult.:1
    		 Screw - - - 4 - - - - MACOM Enhancement 16(A) - 45(%) 65(V) 20 - 175(MHz) - - 350@28V(pF) MACOM - - - Screw - 1 -65C to 200C - - - - - - CASE 211-11 - - 300000(mW) 23(dB) No - - - Compliant - - - Military grade - - - - - - - - - 200 °C -65 °C - - MOSFETs 300 W Si - - - - - 4 - - - - - - - - - - - - RF MOSFET Transistors 16 A 40 V - - 175 MHz - Military - N - - - - - - - - - RF MOSFET Transistors No Lead Free
    MRF-141
    MRF-141

    MACOM
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    MA-COM LF2805A
    Mfr. Тип
    LF2805A
    Anlielectronics Тип

    		MA-COM
    -
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - - - - - - - - - MACOM Enhancement - - 50(Min) % 65 V 20 - 1000 MHz - - - MACOM - - - Screw - 1 -65C to 200C - - - - - - - - - - 10(Min) dB No - - - Details - - - Military grade - - - - - - - - - - - - - MOSFETs - Si - - - - - 3 - - - - - - - - - - - - RF MOSFET Transistors - - - - - - Military - N - - - - - - - 500 MHz - RF MOSFET Transistors - -
      LF2805A
      LF2805A

      MA-COM
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      MA-COM DU2805S
      Mfr. Тип
      DU2805S
      Anlielectronics Тип

      		MA-COM
      RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 - - - - - - - - - MACOM - - - - - 20 - - - - - MACOM - - - - - - - - - - - - - - - - - - - - - - Details - - - - - - - - - - - - - - - - - MOSFETs - Si - - - - - - - - - - - - - - - - - - RF MOSFET Transistors - - - - - - - - - - - - - - - - - - RF MOSFET Transistors - -
        DU2805S
        DU2805S

        MA-COM
        RoHS :
        Инкапсуляция : -
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        1 : -
        MACOM Technology Solutions PTFC260202FC-V1
        Mfr. Тип
        PTFC260202FC-V1
        Anlielectronics Тип

        		MACOM Technology Solutions
        RF MOSFET LDMOS 28V H-37248-4
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 - Chassis Mount H-37248-4 - - H-37248-4 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Tray - - Discontinued at Digi-Key - - - - - - - - - - - - - 2.69GHz - - - - Dual - - - - - 170 mA - - - - - 20dB 65 V - - - - - 5W - - 28 V - - - - - - - -
          PTFC260202FC-V1
          PTFC260202FC-V1

          MACOM Technology Solutions
          RoHS :
          Инкапсуляция : -
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          1 : -
          MACOM Technology Solutions CGHV60170D-GP4
          Mfr. Тип
          CGHV60170D-GP4
          Anlielectronics Тип

          		MACOM Technology Solutions
          RF MOSFET HEMT 50V DIE
          Сборник данных Сравнение
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            Mult.:1
            		 - - Die - - Die - - CGHV60170 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Tray GaN - Active - - - - - - - - - - - - - 6GHz - - - - - - - - - - 260 mA - - - - - 17dB 150 V - - - - - 170W - - 50 V - - - - - - - -
            CGHV60170D-GP4
            CGHV60170D-GP4

            MACOM Technology Solutions
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            MACOM Technology Solutions PTFB213004F-V2-R0
            Mfr. Тип
            PTFB213004F-V2-R0
            Anlielectronics Тип

            		MACOM Technology Solutions
            RF MOSFET LDMOS 30V H-37275-6
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 - Surface Mount H-37275-6/2 - - H-37275-6/2 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Strip - - Obsolete - - - - - - - - - - - - - 2.17GHz - - - - - - - - - - 2.4 A - - - - - 18dB 65 V - - - - - 60W - - 30 V - - - - - - - -
              PTFB213004F-V2-R0
              PTFB213004F-V2-R0

              MACOM Technology Solutions
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              MA-COM DU2880U
              Mfr. Тип
              DU2880U
              Anlielectronics Тип

              		MA-COM
              RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 - - - NO - - 4 SILICON - - - - 16 A - - - - - - M/A-COM TECHNOLOGY SOLUTIONS INC - MACOM DU2880U - - - - 1 - 200 °C - CERAMIC, METAL-SEALED COFIRED FLANGE MOUNT, O-CRFM-F4 ROUND FLANGE MOUNT - Active - - - - - NOT SPECIFIED 5.22 - Yes - - - - - - - - - - EAR99 - - - - - FET General Purpose Power - - RADIAL FLAT NOT SPECIFIED compliant - - O-CRFM-F4 Not Qualified - SINGLE - - ENHANCEMENT MODE - - - AMPLIFIER N-CHANNEL - - - - - - 16 A - 65 V - - METAL-OXIDE SEMICONDUCTOR 207 W - - VERY HIGH FREQUENCY BAND - - - - - -
                DU2880U
                DU2880U

                MA-COM
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                MA-COM UF28100V
                Mfr. Тип
                UF28100V
                Anlielectronics Тип

                		MA-COM
                RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-8
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - - 744A-01 YES - - 8 SILICON - MACOM - - 12 A - - 10 1.5 S - 12 A M/A-COM TECHNOLOGY SOLUTIONS INC - MACOM UF28100V + 150 C - 55 C - SMD/SMT 2 - 200 °C - CERAMIC, METAL-SEALED COFIRED FLANGE MOUNT, R-CDFM-F8 RECTANGULAR FLANGE MOUNT - Active 250 W - - - - NOT SPECIFIED 5.2 Details Yes N-Channel - - 65 V 20 V 6 V Tray - Yes - EAR99 RF Power MOSFET - - LOW NOISE - MOSFETs - Si DUAL FLAT NOT SPECIFIED compliant - 8 R-CDFM-F8 Not Qualified 100 MHz to 500 MHz Dual - - ENHANCEMENT MODE - 100 W - AMPLIFIER N-CHANNEL RF MOSFET Transistors - - 10 dB - - 12 A - 65 V - - METAL-OXIDE SEMICONDUCTOR 250 W - - ULTRA HIGH FREQUENCY BAND - - - RF MOSFET Transistors - -
                  UF28100V
                  UF28100V

                  MA-COM
                  RoHS :
                  Инкапсуляция : -
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                  MACOM Technology Solutions PTFB182557SH-V1-R250
                  Mfr. Тип
                  PTFB182557SH-V1-R250
                  Anlielectronics Тип

                  		MACOM Technology Solutions
                  RF MOSFET LDMOS
                  Сборник данных Сравнение
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                    Mult.:1
                    		 - - - - - - - - PTFB182557 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Tape & Reel (TR) * - Active - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                    PTFB182557SH-V1-R250
                    PTFB182557SH-V1-R250

                    MACOM Technology Solutions
                    RoHS :
                    Инкапсуляция : -
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                    MACOM Technology Solutions CG2H40010P
                    Mfr. Тип
                    CG2H40010P
                    Anlielectronics Тип

                    		MACOM Technology Solutions
                    RF MOSFET HEMT 28V 440196
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 - Surface Mount 440196 - - 440196 - - CG2H40010 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Tray GaN - Active - - - - - - - - - - - - - 8GHz - - - - - - - - - - 200 mA - - - - - 16.7dB 120 V - - - - - 10W - - 28 V - - - - - - - -
                      CG2H40010P
                      CG2H40010P

                      MACOM Technology Solutions
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      MA-COM DU2880T
                      Mfr. Тип
                      DU2880T
                      Anlielectronics Тип

                      		MA-COM
                      -
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 Screw - - - 6 - - - - MACOM Enhancement 16(A) - 60(Min)(%) 65(V) 20 - 175(MHz) - - 180(MAX)@28V(pF) MACOM - - - Screw - 1 -65C to 200C - 80 - - - - - - - 206000(mW) 13(MIN)(dB) No - - - Details - - - Military grade - - - Bulk - - - - - 200 °C -65 °C - - MOSFETs - Si - - - - - 6 - - - - - - - - - - - - RF MOSFET Transistors 16 A 20 V - - - - Military - N - - - - - - - 2(MHz) - RF MOSFET Transistors - -
                        DU2880T
                        DU2880T

                        MA-COM
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        MA-COM DU2860T
                        Mfr. Тип
                        DU2860T
                        Anlielectronics Тип

                        		MA-COM
                        RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 Screw - - NO 6 - 6 SILICON - - - - 12 A - - - - - - M/A-COM TECHNOLOGY SOLUTIONS INC - MACOM DU2860T - - - - 1 - 200 °C - CERAMIC, METAL-SEALED COFIRED - ROUND FLANGE MOUNT - Active - - - - - NOT SPECIFIED 5.23 Compliant Yes - - - - - - Bulk - - - EAR99 - 200 °C -65 °C - - FET General Purpose Power - - RADIAL FLAT NOT SPECIFIED compliant - - O-CRFM-F6 Not Qualified - SINGLE - - ENHANCEMENT MODE - - - AMPLIFIER N-CHANNEL - 12 A 20 V - - - 12 A - 65 V - - METAL-OXIDE SEMICONDUCTOR 159 W - - VERY HIGH FREQUENCY BAND - - - - - -
                          DU2860T
                          DU2860T

                          MA-COM
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          MA-COM UF28100M
                          Mfr. Тип
                          UF28100M
                          Anlielectronics Тип

                          		MA-COM
                          -
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 Screw - - YES 5 - 4 SILICON - MACOM Enhancement 12(A) 12 A 50(Min)(%) 65(V) 10 - 500(MHz) - TE CONNECTIVITY LTD 135(MAX)@28V(pF) MACOM UF28100M - - Screw - 1 -55C to 200C 200 °C 100 CERAMIC, METAL-SEALED COFIRED - RECTANGULAR FLANGE MOUNT - Transferred - 250000(mW) 10(Min)(dB) No - NOT SPECIFIED 5.32 Details Yes - - Military grade - - - - - - - EAR99 - 200 °C -55 °C - 8541.29.00.75 MOSFETs 250 W Si DUAL FLAT NOT SPECIFIED unknown - 5 R-CDFM-F4 Not Qualified - SINGLE - - ENHANCEMENT MODE SOURCE - - AMPLIFIER N-CHANNEL RF MOSFET Transistors 12 A 20 V - - 500 MHz - Military 65 V N - METAL-OXIDE SEMICONDUCTOR - - 24 pF ULTRA HIGH FREQUENCY BAND 250 W 100(MHz) 10 dB RF MOSFET Transistors No -
                            UF28100M
                            UF28100M

                            MA-COM
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            MA-COM DU2810S
                            Mfr. Тип
                            DU2810S
                            Anlielectronics Тип

                            		MA-COM
                            RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 Screw - - YES 4 - 4 SILICON - MACOM - - 2.8 A - - 20 - - 2.8 A M/A-COM TECHNOLOGY SOLUTIONS INC - MACOM DU2810S + 200 C - - Flange Mount 1 - 200 °C - CERAMIC, METAL-SEALED COFIRED FLANGE MOUNT, O-CRFM-F4 ROUND FLANGE MOUNT - Active - - - - - NOT SPECIFIED 5.26 Details Yes N-Channel - - 65 V - - Bulk - - - EAR99 - 200 °C -65 °C LOW NOISE - MOSFETs - Si RADIAL FLAT NOT SPECIFIED compliant - - O-CRFM-F4 Not Qualified 175 MHz SINGLE - - ENHANCEMENT MODE - 10 W - AMPLIFIER N-CHANNEL RF MOSFET Transistors 2.8 A 20 V 13 dB - - 2.8 A - 65 V - - METAL-OXIDE SEMICONDUCTOR 35 W - - VERY HIGH FREQUENCY BAND - - - RF MOSFET Transistors - -
                              DU2810S
                              DU2810S

                              MA-COM
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              MA-COM DU2880V
                              Mfr. Тип
                              DU2880V
                              Anlielectronics Тип

                              		MA-COM
                              RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 Screw - - YES 6 - 8 SILICON - - - - 8 A - - - - - - M/A-COM TECHNOLOGY SOLUTIONS INC - MACOM DU2880V - - - - 2 - 200 °C - CERAMIC, METAL-SEALED COFIRED FLANGE MOUNT, R-CDFM-F8 RECTANGULAR FLANGE MOUNT - Active - - - - - NOT SPECIFIED 5.23 Compliant Yes - - - - - - Bulk - - - EAR99 - 200 °C -55 °C - - FET General Purpose Power - - DUAL FLAT NOT SPECIFIED compliant - - R-CDFM-F8 Not Qualified - COMMON SOURCE, 2 ELEMENTS - - ENHANCEMENT MODE - - - AMPLIFIER N-CHANNEL - 8 A 20 V - - - 8 A - 65 V - - METAL-OXIDE SEMICONDUCTOR 159 W - - VERY HIGH FREQUENCY BAND - - - - - -
                                DU2880V
                                DU2880V

                                MA-COM
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                MA-COM DU2860U
                                Mfr. Тип
                                DU2860U
                                Anlielectronics Тип

                                		MA-COM
                                RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 Screw - - NO 4 - 4 SILICON - MACOM - - 12 A - - 20 - - 12 A M/A-COM TECHNOLOGY SOLUTIONS INC - MACOM DU2860U + 200 C - - Flange Mount 1 - 200 °C - CERAMIC, METAL-SEALED COFIRED FLANGE MOUNT, O-CRFM-F4 ROUND FLANGE MOUNT - Active - - - - - NOT SPECIFIED 4.71 Details Yes N-Channel 0.892167 oz - 65 V - - Bulk - - - EAR99 - 200 °C -55 °C - - MOSFETs - Si RADIAL FLAT NOT SPECIFIED compliant - - O-CRFM-F4 Not Qualified 175 MHz SINGLE - - ENHANCEMENT MODE - 60 W - AMPLIFIER N-CHANNEL RF MOSFET Transistors 12 A 20 V 13 dB - - 12 A - 65 V - - METAL-OXIDE SEMICONDUCTOR 159 W - - VERY HIGH FREQUENCY BAND - - - RF MOSFET Transistors - -
                                  DU2860U
                                  DU2860U

                                  MA-COM
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  MA-COM FH2164
                                  Mfr. Тип
                                  FH2164
                                  Anlielectronics Тип

                                  		MA-COM
                                  -
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 Screw - - - 5 - - - - MACOM - - - - - 20 - - 4 A M/A-COM TECHNOLOGY SOLUTIONS INC - MACOM FH2164 + 200 C - - Flange Mount - - - - - FLANGE MOUNT, S-CDFM-F4 - - - Obsolete - - - - - - 7.86 Compliant Yes N-Channel 0.571517 oz - 65 V - - Bulk - - - EAR99 RF Power MOSFET 200 °C -55 °C - - MOSFETs - Si - - - compliant - - - - 30 MHz to 90 MHz - - Compliant - - 8 W - - - RF MOSFET Transistors 4 A 20 V 13 dB - - - - - - - - - - - - - - - RF MOSFET Transistors - -
                                    FH2164
                                    FH2164

                                    MA-COM
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    MA-COM UF2815B
                                    Mfr. Тип
                                    UF2815B
                                    Anlielectronics Тип

                                    		MA-COM
                                    RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-6
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 Screw - - YES 6 - 6 SILICON - MACOM - - 4.2 A - - 20 - - - M/A-COM TECHNOLOGY SOLUTIONS INC - MACOM UF2815B - - - - 1 - 200 °C - CERAMIC, METAL-SEALED COFIRED FLANGE MOUNT, R-CDFM-F6 RECTANGULAR FLANGE MOUNT - Active - - - - - NOT SPECIFIED 5.3 Compliant Yes - - - - - - Bulk - Yes - EAR99 - 200 °C -55 °C - 8541.29.00.75 MOSFETs - Si DUAL FLAT NOT SPECIFIED compliant - 6 R-CDFM-F6 Not Qualified - SINGLE - - ENHANCEMENT MODE - - - AMPLIFIER N-CHANNEL RF MOSFET Transistors 4.2 A 20 V - - - 4.2 A - 65 V - - METAL-OXIDE SEMICONDUCTOR 48.6 W - - ULTRA HIGH FREQUENCY BAND - - - RF MOSFET Transistors - -
                                      UF2815B
                                      UF2815B

                                      MA-COM
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      MA-COM DU28120V
                                      Mfr. Тип
                                      DU28120V
                                      Anlielectronics Тип

                                      		MA-COM
                                      -
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 - - - - - - - - - MACOM - - - - - 1 3 S - 6 mA - - MACOM - - - - SMD/SMT - - - - - - - - - - 250 W - - - - - - Details - N-Channel 0.544712 oz - 65 V - 6 V - - - - - RF Power MOSFET - - - - MOSFETs - Si - - - - - - - - 2 MHz to 175 MHz - 1 Channel - - - 120 W - - - RF MOSFET Transistors - - 13 dB - - - - - - - - - - - - - - - RF MOSFET Transistors - -
                                        DU28120V
                                        DU28120V

                                        MA-COM
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        MA-COM UF2810P
                                        Mfr. Тип
                                        UF2810P
                                        Anlielectronics Тип

                                        		MA-COM
                                        RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 - - - YES - - 4 SILICON - - - - 1.4 A - - - - - - M/A-COM TECHNOLOGY SOLUTIONS INC - MACOM UF2810P - - - - 2 - 200 °C - CERAMIC, METAL-SEALED COFIRED FLANGE MOUNT, R-CDFM-F4 RECTANGULAR FLANGE MOUNT - Active - - - - - NOT SPECIFIED 5.3 - Yes - - - - - - - - - - EAR99 - - - LOW NOISE - FET General Purpose Power - - DUAL FLAT NOT SPECIFIED compliant - 4 R-CDFM-F4 Not Qualified - COMMON SOURCE, 2 ELEMENTS - - ENHANCEMENT MODE SOURCE - - AMPLIFIER N-CHANNEL - - - - - - 1.4 A - 65 V - - METAL-OXIDE SEMICONDUCTOR 26.9 W - - ULTRA HIGH FREQUENCY BAND - - - - - -
                                          UF2810P
                                          UF2810P

                                          MA-COM
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - FETs, MOSFETs - Single definition: The field-effect transistor (FET) is a type of transistor which uses an electric field to control the flow of current. FETs are also known a... Transistors - FETs, MOSFETs - Single Product Listing: MRF-141,LF2805A,DU2805S,PTFC260202FC-V1,CGHV60170D-GP4.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - FETs, MOSFETs - Single has 29 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.