Transistors - IGBTs - Modules Products For Sale - PDF - Discrete Semiconductor Products -Page36

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Lifecycle Status	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Weight	Number of Terminals	Transistor Element Material	Base Product Number	Brand	Collector- Emitter Voltage VCEO Max	Collector-Emitter Breakdown Voltage	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Current-Collector (Ic) (Max)	Factory Pack QuantityFactory Pack Quantity	Gate-Emitter Leakage Current	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Maximum Collector Emitter Voltage	Maximum Gate Emitter Voltage	Maximum Operating Temperature	Mfr	Minimum Operating Temperature	Mounting Styles	Number of Elements	Package	Package Body Material	Package Description	Package Shape	Package Style	Package Type	Part # Aliases	Part Life Cycle Code	Pd - Power Dissipation	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Turn Off Delay Time	Turn-off Time-Nom (toff)	Turn-on Time-Nom (ton)	Operating Temperature	Packaging	Published	Series	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	Subcategory	Voltage - Rated DC	Max Power Dissipation	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Reach Compliance Code	Current Rating	Time@Peak Reflow Temperature-Max (s)	Base Part Number	Pin Count	JESD-30 Code	Qualification Status	Configuration	Element Configuration	Power Dissipation	Case Connection	Turn On Delay Time	Power - Max	Transistor Application	Halogen Free	Polarity/Channel Type	Input	Product Type	Collector Emitter Voltage (VCEO)	Max Collector Current	Current - Collector Cutoff (Max)	Voltage - Collector Emitter Breakdown (Max)	Reverse Voltage	Input Capacitance	Channel Type	Turn On Time	Vce(on) (Max) @ Vge, Ic	Collector Current-Max (IC)	Continuous Collector Current	Turn Off Time-Nom (toff)	IGBT Type	Collector-Emitter Voltage-Max	NTC Thermistor	Gate-Emitter Voltage-Max	Input Capacitance (Cies) @ Vce	VCEsat-Max	Gate-Emitter Thr Voltage-Max	Product	Product Category	Height	Length	Width	Radiation Hardening	RoHS Status	Lead Free

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Lifecycle Status	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Weight	Number of Terminals	Transistor Element Material	Base Product Number	Brand	Collector- Emitter Voltage VCEO Max	Collector-Emitter Breakdown Voltage	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Current-Collector (Ic) (Max)	Factory Pack QuantityFactory Pack Quantity	Gate-Emitter Leakage Current	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Maximum Collector Emitter Voltage	Maximum Gate Emitter Voltage	Maximum Operating Temperature	Mfr	Minimum Operating Temperature	Mounting Styles	Number of Elements	Package	Package Body Material	Package Description	Package Shape	Package Style	Package Type	Part # Aliases	Part Life Cycle Code	Pd - Power Dissipation	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Turn Off Delay Time	Turn-off Time-Nom (toff)	Turn-on Time-Nom (ton)	Operating Temperature	Packaging	Published	Series	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	Subcategory	Voltage - Rated DC	Max Power Dissipation	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Reach Compliance Code	Current Rating	Time@Peak Reflow Temperature-Max (s)	Base Part Number	Pin Count	JESD-30 Code	Qualification Status	Configuration	Element Configuration	Power Dissipation	Case Connection	Turn On Delay Time	Power - Max	Transistor Application	Halogen Free	Polarity/Channel Type	Input	Product Type	Collector Emitter Voltage (VCEO)	Max Collector Current	Current - Collector Cutoff (Max)	Voltage - Collector Emitter Breakdown (Max)	Reverse Voltage	Input Capacitance	Channel Type	Turn On Time	Vce(on) (Max) @ Vge, Ic	Collector Current-Max (IC)	Continuous Collector Current	Turn Off Time-Nom (toff)	IGBT Type	Collector-Emitter Voltage-Max	NTC Thermistor	Gate-Emitter Voltage-Max	Input Capacitance (Cies) @ Vce	VCEsat-Max	Gate-Emitter Thr Voltage-Max	Product	Product Category	Height	Length	Width	Radiation Hardening	RoHS Status	Lead Free
	Mfr. Тип FZ2400R12KE3B9NOSA1 Anlielectronics Тип	Infineon Technologies	IGBT MODULE Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	Chassis Mount	Module	-	-	AG-IHM190-2-1	-	-	-	-	-	-	-	-	-	3.2 kA	-	-	-	-	-	-	-	-	Infineon Technologies	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-40°C ~ 125°C (TJ)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Single Switch	-	-	-	-	11.5 kW	-	-	-	Standard	-	-	-	5 mA	1200 V	-	-	-	-	2.15V @ 15V, 2.4kA	-	-	-	-	-	No	-	170 nF @ 25 V	-	-	-	-	-	-	-	-	-	-
FZ2400R12KE3B9NOSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FS150R07N3E4BOSA1 Anlielectronics Тип	Infineon Technologies	IGBT MOD 650V 150A 430W Сборник данных Сравнение	Min.:1 Mult.:1	16 Weeks	-	-	Chassis Mount	Module	NO	-	-	-	-	SILICON	-	-	-	-	-	-	150A	-	-	-	-	-	-	-	-	-	-	-	6	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C TJ	-	2012	-	-	no	Active	1 (Unlimited)	35	EAR99	-	-	-	-	-	-	-	UPPER	UNSPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	-	35	R-XUFM-X35	-	Three Phase Inverter	-	-	ISOLATED	-	430W	POWER CONTROL	-	N-CHANNEL	Standard	-	-	-	1mA	650V	-	-	-	180 ns	1.95V @ 15V, 150A	-	-	450 ns	Trench Field Stop	-	Yes	-	9.3nF @ 25V	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
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	Mfr. Тип FD250R65KE3KNOSA1 Anlielectronics Тип	Infineon Technologies	IGBT MOD 6500V 250A 4800W Сборник данных Сравнение	Min.:1 Mult.:1	36 Weeks	-	-	Chassis Mount	Module	NO	-	-	-	-	SILICON	-	-	-	-	-	-	250A	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-50°C~125°C	-	2002	-	-	-	Active	1 (Unlimited)	7	EAR99	-	-	-	UL APPROVED	-	-	-	UPPER	UNSPECIFIED	-	-	-	-	-	-	R-PUFM-X7	-	Single	-	-	ISOLATED	-	4800W	POWER CONTROL	Not Halogen Free	N-CHANNEL	Standard	-	-	-	5mA	6500V	-	-	-	1200 ns	3.4V @ 15V, 250A	-	-	8100 ns	-	-	No	-	69nF @ 25V	-	-	-	-	-	-	-	-	RoHS Compliant	Contains Lead
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	Mfr. Тип MUBW10-12A7 Anlielectronics Тип	IXYS	Trans IGBT Module N-CH 1.2KV 20A 24-Pin E2-Pack Сборник данных Сравнение	Min.:1 Mult.:1	20 Weeks	-	Chassis Mount, Screw	Chassis Mount	E2	-	2	-	-	-	SILICON	-	-	-	1.2kV	-	-	-	-	-	-	-	-	-	-	-	-	-	-	7	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~125°C TJ	Bulk	2001	-	e3	yes	Active	-	24	-	Matte Tin (Sn) - with Nickel (Ni) barrier	-	-	LOW SWITCHING LOSS, LOW SATURATION VOLTAGE	-	1.6kV	105W	UPPER	UNSPECIFIED	NOT SPECIFIED	-	19A	NOT SPECIFIED	MUBW	-	-	Not Qualified	Three Phase Inverter with Brake	-	-	ISOLATED	-	105W	POWER CONTROL	-	N-CHANNEL	Three Phase Bridge Rectifier	-	2.7V	20A	600μA	1200V	1.6kV	600pF	-	90 ns	2.7V @ 15V, 10A	-	-	350 ns	NPT	-	Yes	-	0.6nF @ 25V	-	-	-	-	-	-	-	-	ROHS3 Compliant	Contains Lead
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	Mfr. Тип FZ1500R33HL3BPSA1 Anlielectronics Тип	Infineon Technologies	IGBT MODULE 3300V 1500A Сборник данных Сравнение	Min.:1 Mult.:1	42 Weeks	-	-	Chassis Mount	Module	NO	-	-	-	-	SILICON	-	-	-	-	-	-	1500A	-	-	-	-	-	-	-	-	-	-	-	3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C	-	2002	-	-	-	Active	1 (Unlimited)	9	EAR99	-	-	-	-	-	-	-	UPPER	UNSPECIFIED	-	-	-	-	-	-	R-XUFM-X9	-	Full Bridge	-	-	ISOLATED	-	17000W	POWER CONTROL	-	N-CHANNEL	Standard	-	-	-	5mA	3300V	-	-	-	1050 ns	2.85V @ 15V, 1500A	-	-	4700 ns	Trench Field Stop	-	No	-	6nF @ 25V	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
FZ1500R33HL3BPSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FZ1800R12HP4B9NPSA1 Anlielectronics Тип	Infineon Technologies	INSULATED GATE BIPOLAR TRANSISTO Сборник данных Сравнение	Min.:1 Mult.:1	1 Week	-	-	Chassis Mount	Module	NO	-	AG-IHMB190	-	9	SILICON	-	-	-	-	1.7	-	2700 A	-	-	INFINEON TECHNOLOGIES AG	Infineon Technologies AG	FZ1800R12HP4B9NPSA1	-	-	-	Infineon Technologies	-	-	3	Bulk	UNSPECIFIED	MODULE-9	RECTANGULAR	FLANGE MOUNT	-	-	Active	-	Active	NOT SPECIFIED	5.57	-	No	-	1330 ns	720 ns	-40°C ~ 150°C (TJ)	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	-	UPPER	UNSPECIFIED	NOT SPECIFIED	unknown	-	-	-	-	R-XUFM-X9	-	Single Switch	-	10.5	ISOLATED	-	10500 W	POWER CONTROL	-	N-CHANNEL	Standard	-	-	-	5 mA	1200 V	-	-	-	-	2.05V @ 15V, 1.8kA	2700 A	2.7	-	Trench	1200 V	No	-	110 nF @ 25 V	-	-	-	-	-	-	-	-	-	-
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	Mfr. Тип FS450R17OE4BOSA1 Anlielectronics Тип	Infineon Technologies	MOD IGBT MED PWR ECONOPP-2 Сборник данных Сравнение	Min.:1 Mult.:1	26 Weeks	-	-	Chassis Mount	Module	-	-	-	-	-	-	-	-	-	-	-	-	630A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C	-	2002	EconoPACK™+	-	no	Active	1 (Unlimited)	-	EAR99	-	-	-	-	-	-	-	-	-	NOT SPECIFIED	-	-	NOT SPECIFIED	-	-	-	-	Full Bridge	-	-	-	-	2400W	-	Not Halogen Free	-	Standard	-	-	-	3mA	1700V	-	-	-	-	2.3V @ 15V, 450A	-	-	-	Trench Field Stop	-	Yes	-	36nF @ 25V	-	-	-	-	-	-	-	-	ROHS3 Compliant	Contains Lead
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	Mfr. Тип IXYN100N120C3 Anlielectronics Тип	IXYS	IGBT MOD 1200V 152A 830W SOT227B Сборник данных Сравнение	Min.:1 Mult.:1	17 Weeks	-	Chassis Mount, Surface Mount	Chassis Mount	SOT-227-4, miniBLOC	-	4	-	-	-	SILICON	-	-	-	1.2kV	2.9V	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	123 ns	-	-	-55°C~175°C TJ	-	2011	XPT™, GenX3™	-	-	Active	1 (Unlimited)	4	-	-	-	-	AVALANCHE RATED, UL RECOGNIZED	-	-	830W	UPPER	UNSPECIFIED	-	-	-	-	-	4	-	-	Single	-	830W	ISOLATED	32 ns	-	POWER CONTROL	-	N-CHANNEL	Standard	-	1.2kV	152A	25μA	1200V	-	6nF	-	122 ns	3.5V @ 15V, 100A	-	-	265 ns	-	-	No	20V	6nF @ 25V	-	5V	-	-	9.6mm	38.23mm	25.07mm	-	ROHS3 Compliant	Lead Free
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	Mfr. Тип FZ800R17KF4CNOSA1 Anlielectronics Тип	Infineon Technologies	IGBT MODULE Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Infineon Technologies	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FZ800R17KF4CNOSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MIXA225PF1200TSF Anlielectronics Тип	IXYS	IGBT Modules XPT IGBT Module Сборник данных Сравнение	Min.:1 Mult.:1	14 Weeks	-	Chassis Mount	Chassis Mount	Module	-	-	-	-	-	-	-	-	-	1.2kV	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C TJ	Bulk	2013	-	-	-	Active	1 (Unlimited)	-	-	-	-	-	-	-	-	1.1kW	-	-	-	-	-	-	-	-	-	-	Half Bridge	-	-	-	-	1100W	-	-	-	Standard	-	2.1V	360A	300μA	1200V	-	-	-	-	2.1V @ 15V, 225A	-	-	-	PT	-	Yes	20V	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	Lead Free
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	Mfr. Тип FD16001200R17KF6CB2NOSA1 Anlielectronics Тип	Infineon Technologies	IGBT MODULE Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	Chassis Mount	Module	-	-	AG-ECONO2B	-	-	-	-	-	-	-	-	-	2.6 kA	-	-	-	-	-	-	-	-	Infineon Technologies	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-40°C ~ 125°C (TJ)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Single Switch	-	-	-	-	-	-	-	-	Standard	-	-	-	5 mA	1700 V	-	-	-	-	3.1V @ 15V, 1.6kA	-	-	-	-	-	No	-	105 nF @ 25 V	-	-	-	-	-	-	-	-	-	-
FD16001200R17KF6CB2NOSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FF400R16KF4NOSA1 Anlielectronics Тип	Infineon Technologies	IGBT MODULE Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	Chassis Mount	Module	-	-	-	-	-	-	-	-	-	-	-	-	400 A	-	-	-	-	-	-	-	-	Infineon Technologies	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	150°C (TJ)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2 Independent	-	-	-	-	3.1 kW	-	-	-	Standard	-	-	-	3 mA	1600 V	-	-	-	-	3.7V @ 15V, 400A	-	400	-	-	-	No	-	65000 pF @ 25 V	-	-	-	-	-	-	-	-	-	-
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	Mfr. Тип FF400R12KT4HOSA1 Anlielectronics Тип	Infineon Technologies	IGBT MODULE Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Infineon Technologies	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FF400R12KT4HOSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FB20R06YE3B1BOMA1 Anlielectronics Тип	Infineon Technologies	IGBT MODULE Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	Chassis Mount	Module	-	-	-	-	-	-	-	-	-	-	-	-	27 A	-	-	-	-	-	-	-	-	Infineon Technologies	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-40°C ~ 150°C (TJ)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Three Phase Inverter	-	-	-	-	77 W	-	-	-	Standard	-	-	-	1 mA	600 V	-	-	-	-	2V @ 15V, 20A	-	-	-	-	-	Yes	-	1.1 nF @ 25 V	-	-	-	-	-	-	-	-	-	-
FB20R06YE3B1BOMA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FP200R12N3T7BPSA1 Anlielectronics Тип	Infineon Technologies	LOW POWER ECONO AG-ECONO3-3 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	Chassis Mount	-	-	-	-	-	-	-	FP200R12	Infineon Technologies	1200 V	-	1.55	200 A	-	10	-	-	Infineon	-	1200 V	±20V	+ 175 C	Infineon Technologies	- 40 C	-	-	Tray	-	-	-	-	Module	FP200R12N3T7 SP005337548	-	-	Active	-	-	-	-	-	-	-	-	Tray	-	*	-	-	-	-	-	-	-	-	-	-	IGBTs	-	-	-	-	-	-	-	-	-	46	-	-	3 Phase	-	-	-	-	-	-	-	-	-	IGBT Modules	-	-	-	-	-	-	N	-	-	-	200	-	-	-	-	-	-	-	-	IGBT Silicon Modules	IGBT Modules	-	-	-	-	-	-
FP200R12N3T7BPSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип APTGT200A120D3G Anlielectronics Тип	Microchip Technology	IGBT Modules DOR CC7014View in Development Tools Selector Сборник данных Сравнение	Min.:1 Mult.:1	-	Production (Last Updated: 2 months ago)	Chassis Mount, Screw	Chassis Mount	D3-11	-	7	D3	-	-	-	APTGT200	-	1.2 kV	1.2 kV	1.7 V	300 A	300 A	1	400 nA	-	-	-	-	20 V	+ 125 C	Microchip Technology	- 40 C	Chassis Mount	-	Bulk	-	-	-	-	-	-	-	1.05 kW	Active	-	-	Details	-	-	-	-	-40°C ~ 150°C (TJ)	Bulk	-	-	-	-	-	-	-	-	-	150 °C	-40 °C	-	-	-	1.04 kW	-	-	-	-	-	-	-	-	-	-	Dual	Dual	1.05	-	-	1040 W	-	-	-	Standard	-	1.2 kV	300 A	6 mA	1200 V	-	14 nF	-	-	2.1V @ 15V, 200A	-	300	-	Trench Field Stop	-	No	-	14 nF @ 25 V	-	-	IGBT Silicon Modules	-	-	-	-	No	-	-
APTGT200A120D3G Microchip Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FS75R12W2T4PB11BPSA1 Anlielectronics Тип	Infineon Technologies	LOW POWER EASY Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Infineon Technologies	-	-	-	Tray	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FS75R12W2T4PB11BPSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип BSM200GB120DLCE3256HOSA1 Anlielectronics Тип	Infineon Technologies	BSM200GB120DLC - IGBT Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	Chassis Mount	Module	-	-	Module	-	-	-	-	-	-	-	-	-	420 A	-	-	-	-	-	-	-	-	Infineon Technologies	-	-	-	Bulk	-	-	-	-	-	-	-	-	Obsolete	-	-	-	-	-	-	-	-40°C ~ 125°C (TJ)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Half Bridge	-	-	-	-	1550 W	-	-	-	Standard	-	-	-	5 mA	1200 V	-	-	-	-	2.6V @ 15V, 200A	-	-	-	-	-	No	-	13 nF @ 25 V	-	-	-	-	-	-	-	-	-	-
BSM200GB120DLCE3256HOSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IXGN200N60B3 Anlielectronics Тип	IXYS	IGBT MOD 600V 300A 830W SOT227B Сборник данных Сравнение	Min.:1 Mult.:1	30 Weeks	-	Chassis Mount	Chassis Mount	SOT-227-4, miniBLOC	-	4	-	38.000013g	-	SILICON	-	-	-	600V	1.35V	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	310 ns	-	-	-55°C~150°C TJ	-	2009	GenX3™	-	yes	Active	1 (Unlimited)	4	EAR99	Nickel (Ni)	-	-	UL RECOGNIZED, LOW CONDUCTION LOSS	-	-	830W	UPPER	UNSPECIFIED	-	-	-	-	IXG*200N60	4	-	-	Single	-	830W	ISOLATED	44 ns	-	POWER CONTROL	-	N-CHANNEL	Standard	-	600V	300A	50μA	-	-	26nF	-	122 ns	1.5V @ 15V, 100A	-	-	730 ns	PT	-	No	20V	26nF @ 25V	1.5 V	-	-	-	-	-	-	-	ROHS3 Compliant	Lead Free
IXGN200N60B3 IXYS RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FZ2400R12HE4B9HOSA2 Anlielectronics Тип	Infineon Technologies	IGBT MODULE 1200V 3560A Сборник данных Сравнение	Min.:1 Mult.:1	50 Weeks	-	-	Chassis Mount	Module	NO	-	-	-	-	SILICON	-	-	-	-	-	-	3560A	-	-	-	-	-	-	-	-	-	-	-	3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C	-	2002	-	-	-	Active	1 (Unlimited)	9	EAR99	-	-	-	UL APPROVED	-	-	-	UPPER	UNSPECIFIED	-	-	-	-	-	-	R-PUFM-X9	-	Single Switch	-	-	ISOLATED	-	13500W	POWER CONTROL	Not Halogen Free	N-CHANNEL	Standard	-	-	-	5mA	1200V	-	-	-	880 ns	2.1V @ 15V, 2400A	-	-	1320 ns	Trench Field Stop	-	No	-	150nF @ 25V	-	-	-	-	-	-	-	-	ROHS3 Compliant	Lead Free
FZ2400R12HE4B9HOSA2 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Discrete Semiconductor Products

Transistors - IGBTs - Modules definition: An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as ... Transistors - IGBTs - Modules Product Listing: FZ2400R12KE3B9NOSA1,FS150R07N3E4BOSA1,FD250R65KE3KNOSA1,MUBW10-12A7,FZ1500R33HL3BPSA1.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - IGBTs - Modules has 5133 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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