Transistors - IGBTs - Modules Products For Sale - PDF - Discrete Semiconductor Products -Page42

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Weight	Number of Terminals	Transistor Element Material	Approvals	Automotive	Collector-Emitter Breakdown Voltage	Collector-Emitter Saturation Voltage	Current-Collector (Ic) (Max)	ECCN (US)	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Maximum Collector-Emitter Voltage (V)	Maximum Continuous Collector Current (A)	Maximum Gate Emitter Voltage (V)	Maximum Operating Temperature (°C)	Mfr	Military	Minimum Operating Temperature (°C)	Mounting	Number of Elements	Operating Temperature-Max	Package	Package Body Material	Package Description	Package Height	Package Length	Package Shape	Package Style	Package Width	Part Life Cycle Code	Part Package Code	PCB changed	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Standard Package Name	Supplier Package	Turn-off Time-Nom (toff)	Turn-on Time-Nom (ton)	Typical Collector Emitter Saturation Voltage (V)	Operating Temperature	Packaging	Published	Series	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	Voltage - Rated DC	Max Power Dissipation	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Reach Compliance Code	Current Rating	Time@Peak Reflow Temperature-Max (s)	Base Part Number	Pin Count	JESD-30 Code	Qualification Status	Polarity	Configuration	Element Configuration	Power Dissipation	Case Connection	Power - Max	Transistor Application	Halogen Free	Circuit Type	Polarity/Channel Type	Input	Collector Emitter Voltage (VCEO)	Max Collector Current	Current - Collector Cutoff (Max)	Voltage - Collector Emitter Breakdown (Max)	Reverse Voltage	Input Capacitance	Channel Type	Turn On Time	Vce(on) (Max) @ Vge, Ic	Collector Current-Max (IC)	Continuous Collector Current	Turn Off Time-Nom (toff)	IGBT Type	Collector-Emitter Voltage-Max	NTC Thermistor	Gate-Emitter Voltage-Max	Input Capacitance (Cies) @ Vce	VCEsat-Max	Height	Length	Width	Height (mm)	RoHS Status	Lead Free

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Weight	Number of Terminals	Transistor Element Material	Approvals	Automotive	Collector-Emitter Breakdown Voltage	Collector-Emitter Saturation Voltage	Current-Collector (Ic) (Max)	ECCN (US)	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Maximum Collector-Emitter Voltage (V)	Maximum Continuous Collector Current (A)	Maximum Gate Emitter Voltage (V)	Maximum Operating Temperature (°C)	Mfr	Military	Minimum Operating Temperature (°C)	Mounting	Number of Elements	Operating Temperature-Max	Package	Package Body Material	Package Description	Package Height	Package Length	Package Shape	Package Style	Package Width	Part Life Cycle Code	Part Package Code	PCB changed	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Standard Package Name	Supplier Package	Turn-off Time-Nom (toff)	Turn-on Time-Nom (ton)	Typical Collector Emitter Saturation Voltage (V)	Operating Temperature	Packaging	Published	Series	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	Voltage - Rated DC	Max Power Dissipation	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Reach Compliance Code	Current Rating	Time@Peak Reflow Temperature-Max (s)	Base Part Number	Pin Count	JESD-30 Code	Qualification Status	Polarity	Configuration	Element Configuration	Power Dissipation	Case Connection	Power - Max	Transistor Application	Halogen Free	Circuit Type	Polarity/Channel Type	Input	Collector Emitter Voltage (VCEO)	Max Collector Current	Current - Collector Cutoff (Max)	Voltage - Collector Emitter Breakdown (Max)	Reverse Voltage	Input Capacitance	Channel Type	Turn On Time	Vce(on) (Max) @ Vge, Ic	Collector Current-Max (IC)	Continuous Collector Current	Turn Off Time-Nom (toff)	IGBT Type	Collector-Emitter Voltage-Max	NTC Thermistor	Gate-Emitter Voltage-Max	Input Capacitance (Cies) @ Vce	VCEsat-Max	Height	Length	Width	Height (mm)	RoHS Status	Lead Free
	Mfr. Тип FP75R17N3E4B11BPSA1 Anlielectronics Тип	Infineon Technologies	MOD IGBT LOW PWR ECONO3-3 Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	-	Chassis Mount	Module	NO	-	-	-	-	SILICON	-	-	-	-	150A	-	-	-	-	-	-	-	-	-	-	-	-	7	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C	-	2002	EconoPIM™3	-	-	Active	1 (Unlimited)	35	EAR99	-	-	-	-	UL RECOGNIZED	-	-	UPPER	UNSPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	-	-	R-XUFM-X35	-	-	Three Phase Inverter	-	-	ISOLATED	20mW	POWER CONTROL	-	-	N-CHANNEL	Three Phase Bridge Rectifier	-	-	1mA	1700V	-	-	-	305 ns	2.3V @ 15V, 75A	-	-	800 ns	Trench Field Stop	-	Yes	-	6.8nF @ 25V	-	-	-	-	-	ROHS3 Compliant	-
FP75R17N3E4B11BPSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FF400R12KT3PEHOSA1 Anlielectronics Тип	Infineon Technologies	MOD IGBT MED PWR 62MM-1 Сборник данных Сравнение	Min.:1 Mult.:1	14 Weeks	-	Chassis Mount	Module	NO	-	-	-	-	-	-	-	-	-	400A	-	-	-	-	-	-	-	-	-	-	-	-	2	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~125°C	-	2005	C	-	-	Active	1 (Unlimited)	7	EAR99	-	-	-	-	UL APPROVED	-	-	UPPER	-	-	-	-	-	-	-	R-XUFM-X7	-	-	Half Bridge	-	-	ISOLATED	-	-	-	-	-	Standard	-	-	5mA	1200V	-	-	-	215 ns	2.15V @ 15V, 400A	-	-	680 ns	Trench Field Stop	-	No	-	28nF @ 25V	-	-	-	-	-	ROHS3 Compliant	-
FF400R12KT3PEHOSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип 6MS30017E43W40372NOSA1 Anlielectronics Тип	Infineon Technologies	MODULE IGBT STACK A-MS3-1 Сборник данных Сравнение	Min.:1 Mult.:1	16 Weeks	-	Chassis Mount	Module	-	-	-	-	-	-	-	-	-	-	1800A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-25°C~55°C	-	2007	ModSTACK™ HD	-	-	Active	1 (Unlimited)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Three Phase Inverter	-	-	-	29140W	-	Not Halogen Free	-	-	Standard	-	-	-	1700V	-	-	-	-	-	-	-	-	-	-	Yes	-	-	-	-	-	-	-	Non-RoHS Compliant	Contains Lead
6MS30017E43W40372NOSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FF225R17ME4B11BOSA1 Anlielectronics Тип	Infineon Technologies	IGBT MOD 1700V 340A 1500W Сборник данных Сравнение	Min.:1 Mult.:1	16 Weeks	-	Chassis Mount	Module	NO	-	-	-	-	SILICON	-	-	-	-	340A	-	-	-	-	-	-	-	-	-	-	-	-	2	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C	-	2002	-	-	-	Active	Not Applicable	11	EAR99	-	-	-	-	-	-	-	UPPER	UNSPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	-	-	R-XUFM-X11	-	-	2 Independent	Dual	-	ISOLATED	1500W	POWER CONTROL	Not Halogen Free	-	N-CHANNEL	Standard	-	-	3mA	1700V	-	-	-	350 ns	2.3V @ 15V, 225A	-	-	1500 ns	Trench Field Stop	-	Yes	-	18.5nF @ 25V	-	-	-	-	-	RoHS Compliant	Contains Lead
FF225R17ME4B11BOSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FP75R07N2E4B11BOSA1 Anlielectronics Тип	Infineon Technologies	IGBT MODULE VCES 600V 75A Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	Screw	Chassis Mount	Module	-	31	-	-	-	SILICON	-	-	-	-	75A	-	-	-	-	-	-	-	-	-	-	-	-	7	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C	Bulk	2002	-	-	-	Active	Not Applicable	31	EAR99	-	-	-	-	UL APPROVED	-	-	UPPER	UNSPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	-	-	-	-	-	Three Phase Inverter	-	-	ISOLATED	-	POWER CONTROL	Not Halogen Free	-	N-CHANNEL	Standard	650V	75A	1mA	-	-	-	-	45 ns	1.95V @ 15V, 75A	-	-	320 ns	Trench Field Stop	-	Yes	-	4.6nF @ 25V	-	-	-	-	-	RoHS Compliant	Contains Lead
FP75R07N2E4B11BOSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FF600R12KE4EBOSA1 Anlielectronics Тип	Infineon Technologies	MOD IGBT MED PWR 62MM-1 Сборник данных Сравнение	Min.:1 Mult.:1	14 Weeks	-	Chassis Mount	Module	NO	-	-	-	-	-	-	-	-	-	600A	-	-	-	-	-	-	-	-	-	-	-	-	2	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C	-	2016	C	-	-	Active	1 (Unlimited)	7	EAR99	-	-	-	-	UL APPROVED	-	-	UPPER	-	-	-	-	-	-	-	R-XUFM-X7	-	-	Half Bridge	-	-	ISOLATED	-	-	-	-	-	Standard	-	-	5mA	1200V	-	-	-	232 ns	2.2V @ 15V, 600A	-	-	630 ns	Trench Field Stop	-	No	-	38nF @ 25V	-	-	-	-	-	ROHS3 Compliant	-
FF600R12KE4EBOSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MG12150W-XN2MM Anlielectronics Тип	Littelfuse Inc.	IGBT Modules 1200V 150A IGBT Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	Chassis Mount	Chassis Mount	Module	-	-	-	300.000012g	-	-	-	-	1.2kV	1.9V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~125°C TJ	-	2014	-	-	-	Active	1 (Unlimited)	-	EAR99	-	-	-	-	-	-	625W	-	-	NOT SPECIFIED	unknown	-	NOT SPECIFIED	-	-	-	-	-	Three Phase Inverter	-	-	-	625W	-	-	-	-	Standard	1.7V	200A	1mA	1200V	-	10.5nF	-	-	1.7V @ 15V, 150A (Typ)	-	-	-	Trench Field Stop	-	Yes	-	10.5nF @ 25V	-	-	-	-	-	ROHS3 Compliant	-
MG12150W-XN2MM Littelfuse Inc. RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип DF200R12W1H3FB11BOMA1 Anlielectronics Тип	Infineon Technologies	MOD DIODE BRIDGE EASY1B-2-1 Сборник данных Сравнение	Min.:1 Mult.:1	32 Weeks	-	Chassis Mount	Module	NO	-	-	-	-	SILICON	-	-	-	-	30A	-	-	-	-	-	-	-	-	-	-	-	-	2	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C	-	2002	EasyPACK™	-	-	Not For New Designs	1 (Unlimited)	18	EAR99	-	-	-	-	-	-	-	UPPER	UNSPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	-	-	R-XUFM-X18	-	-	Three Phase Inverter	-	-	ISOLATED	20mW	POWER CONTROL	-	-	N-CHANNEL	Standard	-	-	1mA	1200V	-	-	-	27 ns	1.45V @ 15V, 30A	-	-	475 ns	Trench Field Stop	-	Yes	-	6.15nF @ 25V	-	-	-	-	-	ROHS3 Compliant	-
DF200R12W1H3FB11BOMA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FD16001200R17HP4B2BOSA2 Anlielectronics Тип	Infineon Technologies	IGBT MODULE VCES 1700V 1600A Сборник данных Сравнение	Min.:1 Mult.:1	24 Weeks	-	Chassis Mount	Module	NO	-	-	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C	-	2006	-	-	-	Active	1 (Unlimited)	9	EAR99	-	-	-	-	-	-	-	UPPER	UNSPECIFIED	-	-	-	-	-	-	R-XUFM-X9	-	-	Dual Brake Chopper	-	-	ISOLATED	10500W	POWER CONTROL	Not Halogen Free	-	N-CHANNEL	Standard	-	-	5mA	1700V	-	-	-	650 ns	2.25V @ 15V, 1600A	-	-	1710 ns	-	-	No	-	130nF @ 25V	-	-	-	-	-	RoHS Compliant	Contains Lead
FD16001200R17HP4B2BOSA2 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип F4200R17N3E4BPSA1 Anlielectronics Тип	Infineon Technologies	IGBT MOD 1700V 200A 20MW Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	-	Chassis Mount	Module	-	-	-	-	-	-	-	-	-	-	200A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C TJ	-	2002	EconoPACK™ 3	-	-	Active	1 (Unlimited)	-	EAR99	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Full Bridge	-	-	-	20mW	-	-	-	-	Standard	-	-	1mA	1700V	-	-	-	-	2.3V @ 15V, 200A	-	-	-	Trench Field Stop	-	Yes	-	18nF @ 25V	-	-	-	-	-	ROHS3 Compliant	-
F4200R17N3E4BPSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FZ2400R12HP4NPSA1 Anlielectronics Тип	Infineon Technologies	INSULATED GATE BIPOLAR TRANSISTO Сборник данных Сравнение	Min.:1 Mult.:1	1 Week	-	Chassis Mount	Module	NO	-	AG-IHMB130-2-1	-	7	SILICON	-	-	-	-	3460 A	-	INFINEON TECHNOLOGIES AG	Infineon Technologies AG	FZ2400R12HP4NPSA1	-	-	-	-	Infineon Technologies	-	-	-	2	150 °C	Bulk	UNSPECIFIED	FLANGE MOUNT, R-XUFM-X7	-	-	RECTANGULAR	FLANGE MOUNT	-	Active	MODULE	-	Active	NOT SPECIFIED	5.1	-	No	-	-	1440 ns	880 ns	-	-40°C ~ 150°C (TJ)	-	-	-	-	No	-	-	-	EAR99	-	-	-	-	-	-	-	UPPER	UNSPECIFIED	NOT SPECIFIED	compliant	-	-	-	7	R-XUFM-X7	Not Qualified	-	Single Switch	-	-	ISOLATED	-	POWER CONTROL	-	-	N-CHANNEL	Standard	-	-	5 mA	1200 V	-	-	-	-	2.05V @ 15V, 2.4kA	3460 A	3460	-	Trench	1200 V	No	-	150 nF @ 25 V	-	-	-	-	-	-	-
FZ2400R12HP4NPSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип SKM25GD125D Anlielectronics Тип	Semikron	Trans IGBT Module N-CH 1200V 39A 17-Pin Case D-67 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	UL	No	-	-	-	EAR99	-	Semikron	21918000	1200	39	±20	150	-	No	-40	Screw	-	-	-	-	-	18	105	-	-	45	-	-	17	-	-	-	No	-	Module	Case D-67	-	-	3.2	-	-	-	-	-	-	NRND	-	-	-	Six-Pack	-	-	-	-	-	-	-	-	-	-	-	-	-	17	-	-	-	Hex	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	-	-	-	-	-	-	-	-	-	-	-	-	-	24 mm	Yes with exemptions	-
SKM25GD125D Semikron RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MII150-12A4 Anlielectronics Тип	IXYS	Trans IGBT Module N-CH 1.2KV 180A 7-Pin Y3-DCB Сборник данных Сравнение	Min.:1 Mult.:1	28 Weeks	Chassis Mount, Screw	Chassis Mount	Y3-DCB	-	7	-	-	-	SILICON	-	-	1.2kV	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	150°C TJ	Bulk	2000	-	-	yes	Active	1 (Unlimited)	7	-	-	-	-	-	UL RECOGNIZED	-	760W	UPPER	UNSPECIFIED	-	-	-	-	MII	7	-	-	-	Half Bridge	Dual	-	ISOLATED	760W	MOTOR CONTROL	-	-	N-CHANNEL	Standard	1.2kV	180A	7.5mA	1200V	-	6.6nF	-	170 ns	2.7V @ 15V, 100A	-	-	570 ns	NPT	-	No	20V	6.6nF @ 25V	3 V	30mm	110mm	62mm	-	ROHS3 Compliant	Lead Free
MII150-12A4 IXYS RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FS75R07N2E4BOSA1 Anlielectronics Тип	Infineon Technologies	IGBT MODULE 650V 75A 250W Сборник данных Сравнение	Min.:1 Mult.:1	16 Weeks	-	Chassis Mount	Module	NO	-	-	-	-	SILICON	-	-	-	-	75A	-	-	-	-	-	-	-	-	-	-	-	-	6	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C	-	2002	EconoPACK™2	-	no	Active	1 (Unlimited)	19	EAR99	-	-	-	-	UL APPROVED	-	-	UPPER	UNSPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	-	28	R-XUFM-X19	-	-	Three Phase Inverter	-	-	ISOLATED	250W	POWER CONTROL	-	-	N-CHANNEL	Standard	-	-	1mA	650V	-	-	-	45 ns	1.95V @ 15V, 75A	-	-	320 ns	Trench Field Stop	-	Yes	-	4.6nF @ 25V	-	-	-	-	-	ROHS3 Compliant	-
FS75R07N2E4BOSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип SKM800GA176D Anlielectronics Тип	Semikron	Trans IGBT Module N-CH 1700V 830A 4-Pin Case D-59 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	No	-	2V	-	EAR99	-	Semikron	22890435	1700	830	±20	150	-	No	-40	Screw	-	-	-	-	-	36.5	106.4	-	-	61.4	-	-	4	-	-	-	Yes	-	-	Case D-59	-	-	2	-	-	-	-	-	-	Active	-	-	-	Single	-	-	-	-	-	-	-	-	-	-	-	-	-	4	-	-	-	Single	-	-	-	-	-	-	Single IGBT	-	-	-	-	-	-	-	-	N	-	-	-	830A	-	-	-	-	-	-	-	-	-	-	36.5 mm	Yes with exemptions	-
SKM800GA176D Semikron RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FZ3600R17HE4PHPSA1 Anlielectronics Тип	Infineon Technologies	IGBT MODULE 1700V 7200A Сборник данных Сравнение	Min.:1 Mult.:1	52 Weeks	-	Chassis Mount	Module	NO	-	-	-	-	SILICON	-	-	-	-	7200A	-	-	-	-	-	-	-	-	-	-	-	-	3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C	-	2002	-	-	-	Active	1 (Unlimited)	9	EAR99	-	-	-	-	-	-	-	UPPER	UNSPECIFIED	-	-	-	-	-	-	R-PUFM-X9	-	-	Single Switch	-	-	ISOLATED	-	POWER CONTROL	-	-	N-CHANNEL	Standard	-	-	5mA	1700V	-	-	-	1075 ns	2.3V @ 15V, 3600A	-	-	2245 ns	Trench Field Stop	-	No	-	295nF @ 25V	-	-	-	-	-	ROHS3 Compliant	-
FZ3600R17HE4PHPSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FP100R06KE3B16BOSA1 Anlielectronics Тип	Infineon Technologies	IGBT MODULE Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Infineon Technologies	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FP100R06KE3B16BOSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MUBW10-06A6K Anlielectronics Тип	IXYS	IGBT MODULE 600V 11A 50W E1 Сборник данных Сравнение	Min.:1 Mult.:1	20 Weeks	Chassis Mount	Chassis Mount	E1	-	1	-	-	-	SILICON	-	-	600V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	7	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C TJ	-	2009	-	e3	yes	Active	1 (Unlimited)	25	-	-	PURE TIN	-	-	-	-	50W	UPPER	UNSPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	MUBW	25	R-XUFM-X25	Not Qualified	-	Three Phase Inverter with Brake	-	-	ISOLATED	50W	POWER CONTROL	-	-	N-CHANNEL	Three Phase Bridge Rectifier	3.3V	11A	65μA	-	1.6kV	220pF	-	40 ns	3.3V @ 15V, 10A	-	-	320 ns	NPT	-	Yes	20V	0.22nF @ 25V	-	-	-	-	-	ROHS3 Compliant	Lead Free
MUBW10-06A6K IXYS RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MG06100S-BN4MM Anlielectronics Тип	Littelfuse Inc.	IGBT MODULE 600V 125A 330W S3 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	Chassis Mount	Chassis Mount	S-3 Module	-	7	S3	160.000002g	-	-	-	-	600V	1.45V	125A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C TJ	-	2014	-	-	-	Active	1 (Unlimited)	-	-	-	-	150°C	-40°C	-	-	330W	-	-	-	-	-	-	-	-	-	-	NPN	Half Bridge	Dual	-	-	330W	-	-	-	-	Standard	1.9V	125A	1mA	600V	-	6.2nF	-	-	1.9V @ 15V, 100A	-	-	-	-	-	No	-	6.2nF @ 25V	-	-	-	-	-	ROHS3 Compliant	-
MG06100S-BN4MM Littelfuse Inc. RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип HGT1N30N60A4D Anlielectronics Тип	ON Semiconductor	Trans IGBT Chip N-CH 600V 96A 4-Pin SOT-227 Rail Сборник данных Сравнение	Min.:1 Mult.:1	-	Chassis Mount, Screw	Chassis Mount	SOT-227-4, miniBLOC	-	4	-	-	-	-	-	-	600V	2.7V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-55°C~150°C TJ	-	-	-	-	-	Obsolete	1 (Unlimited)	-	-	-	-	-	-	-	600V	255W	-	-	-	-	96A	-	-	-	-	-	-	Single	-	225W	-	-	-	-	-	-	Standard	600V	96A	250μA	-	-	-	-	-	2.7V @ 15V, 30A	-	-	-	-	-	No	-	-	-	-	-	-	-	RoHS Compliant	Lead Free
HGT1N30N60A4D ON Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Discrete Semiconductor Products

Transistors - IGBTs - Modules definition: An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as ... Transistors - IGBTs - Modules Product Listing: FP75R17N3E4B11BPSA1,FF400R12KT3PEHOSA1,6MS30017E43W40372NOSA1,FF225R17ME4B11BOSA1,FP75R07N2E4B11BOSA1.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - IGBTs - Modules has 5133 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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