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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Mount Mounting Type Package / Case Surface Mount Number of Pins Transistor Element Material Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Current-Collector (Ic) (Max) Number of Elements Operating Temperature (Max.) Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Terminal Finish Additional Feature Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Qualification Status Configuration Element Configuration Power Dissipation Output Current Case Connection Turn On Delay Time Power - Max Transistor Application Halogen Free Polarity/Channel Type Input Collector Emitter Voltage (VCEO) Max Collector Current Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Reverse Voltage Input Capacitance Turn On Time Vce(on) (Max) @ Vge, Ic Collector Current-Max (IC) Turn Off Time-Nom (toff) IGBT Type Collector-Emitter Voltage-Max NTC Thermistor Gate-Emitter Voltage-Max Input Capacitance (Cies) @ Vce VCEsat-Max Gate-Emitter Thr Voltage-Max Height Length Width REACH SVHC RoHS Status Lead Free
IXYS MWI100-12T8T
Mfr. Тип
MWI100-12T8T
Anlielectronics Тип

IXYS
IGBT MODULE 1200V 145A 480W E3
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 32 Weeks - Chassis Mount Chassis Mount E3 - 3 SILICON 1.2kV - - 6 - - -40°C~125°C TJ - 2010 - - yes Active 1 (Unlimited) 21 - - UL RECOGNIZED 480W UPPER UNSPECIFIED NOT SPECIFIED - NOT SPECIFIED MWI 35 R-XUFM-X21 Not Qualified Three Phase Inverter - - - ISOLATED - 480W POWER CONTROL - N-CHANNEL Standard 2.1V 145A 4mA 1200V - 7.21nF 320 ns 2.1V @ 15V, 100A - 740 ns Trench - Yes 20V 7.21nF @ 25V - - - - - - ROHS3 Compliant Lead Free
    MWI100-12T8T
    MWI100-12T8T

    IXYS
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    IXYS MID200-12A4
    Mfr. Тип
    MID200-12A4
    Anlielectronics Тип

    		IXYS
    Trans IGBT Module N-CH 1.2KV 270A 5-Pin Y3-DCB
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 28 Weeks - Chassis Mount, Panel, Screw Chassis Mount Y3-DCB - 7 SILICON 1.2kV 2.2V - 1 - 650 ns 150°C TJ Box 2000 - - yes Active 1 (Unlimited) 5 EAR99 - UL RECOGNIZED 1.13kW UPPER UNSPECIFIED - - - MID 7 R-XUFM-X5 - Single - - - ISOLATED 100 ns 1130W POWER CONTROL - N-CHANNEL Standard 1.2kV 270A 10mA 1200V - 11nF 150 ns 2.7V @ 15V, 150A - 700 ns NPT - No 20V 11nF @ 25V 3 V - 30mm 110mm 62mm No SVHC ROHS3 Compliant Lead Free
      MID200-12A4
      MID200-12A4

      IXYS
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      IXYS IXBN75N170
      Mfr. Тип
      IXBN75N170
      Anlielectronics Тип

      		IXYS
      IGBT MOD 1700V 145A 625W SOT227B
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 28 Weeks - Chassis Mount, Screw Chassis Mount SOT-227-4, miniBLOC - 4 SILICON 1.7kV - - 1 - - -55°C~150°C TJ - 2009 BIMOSFET™ - yes Active 1 (Unlimited) 4 - Nickel (Ni) UL RECOGNIZED 625W UPPER UNSPECIFIED - - - IXB*75N170 4 - - Single - - - ISOLATED - 625W POWER CONTROL - N-CHANNEL Standard 3.1V 145A 25μA 1700V - 6.93nF 277 ns 3.1V @ 15V, 75A - 840 ns - - No 20V 6.93nF @ 25V - 5.5V - - - - ROHS3 Compliant -
        IXBN75N170
        IXBN75N170

        IXYS
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Infineon Technologies FD650R17IE4BOSA2
        Mfr. Тип
        FD650R17IE4BOSA2
        Anlielectronics Тип

        		Infineon Technologies
        IGBT MOD 1700V 930A 4150W
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 14 Weeks - - Chassis Mount Module NO - SILICON - - 930A 1 - - -40°C~150°C - 2002 PrimePack™2 - no Active 1 (Unlimited) 10 EAR99 - - - UPPER UNSPECIFIED NOT SPECIFIED - NOT SPECIFIED - 10 R-XUFM-X10 Not Qualified Single - - - ISOLATED - 4150W POWER CONTROL - N-CHANNEL Standard - - 5mA 1700V - - 720 ns 2.45V @ 15V, 650A - 1870 ns - - Yes - 54nF @ 25V - - - - - - ROHS3 Compliant -
          FD650R17IE4BOSA2
          FD650R17IE4BOSA2

          Infineon Technologies
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Infineon Technologies FS200R12KT4RPBPSA1
          Mfr. Тип
          FS200R12KT4RPBPSA1
          Anlielectronics Тип

          		Infineon Technologies
          IGBT MODULE LOW PWR ECONO3-4
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 - - - - - NO - SILICON - - - 6 175°C - - - - - - - Obsolete 1 (Unlimited) 35 EAR99 - UL RECOGNIZED - UPPER UNSPECIFIED - compliant - - - R-XUFM-X35 - BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR - - - ISOLATED - - POWER CONTROL - N-CHANNEL - - - - - - - 190 ns - 280A 600 ns - 1200V - - - - - - - - - - -
            FS200R12KT4RPBPSA1
            FS200R12KT4RPBPSA1

            Infineon Technologies
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            IXYS MUBW35-12A8
            Mfr. Тип
            MUBW35-12A8
            Anlielectronics Тип

            		IXYS
            IGBT MODULE 1200V 50A 225W E3
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 32 Weeks - Chassis Mount, Screw Chassis Mount E3 - 3 SILICON 1.2kV - - 7 - - -40°C~125°C TJ Bulk 2007 - e3 yes Active 1 (Unlimited) 24 - Matte Tin (Sn) - with Nickel (Ni) barrier UL RECOGNIZED 225W UPPER UNSPECIFIED NOT SPECIFIED - NOT SPECIFIED MUBW 24 R-XUFM-X24 Not Qualified Three Phase Inverter with Brake - - - ISOLATED - 225W POWER CONTROL - N-CHANNEL Three Phase Bridge Rectifier 3.1V 50A 1.1mA 1200V 1.6kV 1.65nF 170 ns 3.1V @ 15V, 35A - 570 ns NPT - Yes 20V 1.65nF @ 25V - - - - - - ROHS3 Compliant -
              MUBW35-12A8
              MUBW35-12A8

              IXYS
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              IXYS MWI75-06A7
              Mfr. Тип
              MWI75-06A7
              Anlielectronics Тип

              		IXYS
              Trans IGBT Module N-CH 600V 90A 18-Pin E2
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 20 Weeks - Chassis Mount, Screw Chassis Mount E2 - 18 SILICON 600V - - 6 - - -40°C~150°C TJ Bulk 2007 - e3 yes Active 1 (Unlimited) 11 - Matte Tin (Sn) - with Nickel (Ni) barrier UL RECOGNIZED 280W UPPER UNSPECIFIED - - - MWI 17 R-XUFM-X11 - Three Phase Inverter - - - ISOLATED - 280W POWER CONTROL - N-CHANNEL Standard 600V 90A 1.3mA - - 3.2nF 100 ns 2.6V @ 15V, 75A - 310 ns NPT - No 20V 3.2nF @ 25V 2.6 V - 17mm 107.5mm 45mm - ROHS3 Compliant Lead Free
                MWI75-06A7
                MWI75-06A7

                IXYS
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Infineon Technologies FD800R45KL3KB5NPSA1
                Mfr. Тип
                FD800R45KL3KB5NPSA1
                Anlielectronics Тип

                		Infineon Technologies
                IGBT MOD 4500V 800A 9000W
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 20 Weeks - - Chassis Mount Module NO - SILICON - - 800A 2 - - -50°C~125°C - 2002 - - - Active 1 (Unlimited) 9 EAR99 - - - UPPER UNSPECIFIED - - - - - R-PUFM-X9 - Single Chopper - - - ISOLATED - 9000W POWER CONTROL Not Halogen Free N-CHANNEL Standard - - 5mA 4500V - - 1050 ns 2.85V @ 15V, 800A - 7350 ns - - No - 185nF @ 25V - - - - - - Non-RoHS Compliant Contains Lead
                  FD800R45KL3KB5NPSA1
                  FD800R45KL3KB5NPSA1

                  Infineon Technologies
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Infineon Technologies FF600R12ME4CPBPSA1
                  Mfr. Тип
                  FF600R12ME4CPBPSA1
                  Anlielectronics Тип

                  		Infineon Technologies
                  IGBT MODULE VCES 600V 600A
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 8 Weeks - - - - NO - SILICON - - - 2 - - - - - - - - Not For New Designs 1 (Unlimited) 11 EAR99 - - - UPPER UNSPECIFIED - compliant - - - R-XUFM-X11 - SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR - - - ISOLATED - - POWER CONTROL - N-CHANNEL - - - - - - - 300 ns - 1060A 710 ns - 1200V - - - - - - - - - - -
                    FF600R12ME4CPBPSA1
                    FF600R12ME4CPBPSA1

                    Infineon Technologies
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    IXYS MII75-12A3
                    Mfr. Тип
                    MII75-12A3
                    Anlielectronics Тип

                    		IXYS
                    IGBT MODULE 1200V 90A 370W Y4M5
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 24 Weeks - Chassis Mount, Panel Chassis Mount Y4-M5 - 7 SILICON 1.2kV - - 2 - 500 ns -40°C~150°C TJ - 2000 - - yes Active 1 (Unlimited) 7 EAR99 - UL RECOGNIZED 370W UPPER UNSPECIFIED - - - MII 7 - - Half Bridge Dual - - ISOLATED 100 ns 370W MOTOR CONTROL - N-CHANNEL Standard 2.7V 90A 4mA 1200V 1.2kV 3.3nF 170 ns 2.7V @ 15V, 50A - 570 ns NPT - No 20V 3.3nF @ 25V 3 V - 30mm 94mm 34mm - ROHS3 Compliant Lead Free
                      MII75-12A3
                      MII75-12A3

                      IXYS
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      IXYS MUBW15-12A6K
                      Mfr. Тип
                      MUBW15-12A6K
                      Anlielectronics Тип

                      		IXYS
                      Discrete Semiconductor Modules 15 Amps 1200V
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 20 Weeks - Chassis Mount, PCB, Screw Chassis Mount E1 - 25 SILICON 1.2kV - - 7 - - -40°C~125°C TJ Bulk 2007 - e3 yes Active 1 (Unlimited) 25 EAR99 Matte Tin (Sn) UL RECOGNIZED 90W UPPER UNSPECIFIED NOT SPECIFIED - NOT SPECIFIED MUBW 25 - Not Qualified Three Phase Inverter with Brake - - 89A ISOLATED - 90W POWER CONTROL - N-CHANNEL Three Phase Bridge Rectifier 1.2kV 19A 600μA 1200V 1.6kV 600pF 90 ns 3.4V @ 15V, 15A - 350 ns NPT - Yes 20V 0.6nF @ 25V 3.4 V - 17.1mm 82mm 37.4mm - ROHS3 Compliant Lead Free
                        MUBW15-12A6K
                        MUBW15-12A6K

                        IXYS
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        IXYS IXYN82N120C3
                        Mfr. Тип
                        IXYN82N120C3
                        Anlielectronics Тип

                        		IXYS
                        IGBT MOD 1200V 105A 500W SOT227B
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 28 Weeks - Chassis Mount, Surface Mount Chassis Mount SOT-227-4, miniBLOC - 4 SILICON 1.2kV 2.75V 105A 1 - 192 ns -55°C~175°C TJ - 2011 XPT™, GenX3™ - - Active 1 (Unlimited) 4 - - AVALANCHE RATED, UL RECOGNIZED 500W UPPER UNSPECIFIED - - - - 4 - - Single - 600W - ISOLATED 29 ns - POWER CONTROL - N-CHANNEL Standard 1.2kV 120A 25μA 1200V - 4.1nF 119 ns 3.2V @ 15V, 82A - 295 ns - - No 20V 4.1nF @ 25V - - 9.6mm 38.23mm 25.07mm - ROHS3 Compliant Lead Free
                          IXYN82N120C3
                          IXYN82N120C3

                          IXYS
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          ON Semiconductor NXH160T120L2Q2F2SG
                          Mfr. Тип
                          NXH160T120L2Q2F2SG
                          Anlielectronics Тип

                          		ON Semiconductor
                          PIM 1200V, 160A SPLIT TNP
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 26 Weeks ACTIVE (Last Updated: 2 days ago) - - - - - - - - - - - - - - - - - yes Active Not Applicable - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - ROHS3 Compliant -
                            NXH160T120L2Q2F2SG
                            NXH160T120L2Q2F2SG

                            ON Semiconductor
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            STMicroelectronics A1C15S12M3
                            Mfr. Тип
                            A1C15S12M3
                            Anlielectronics Тип

                            		STMicroelectronics
                            IGBT TRENCH 1200V 15A ACEPACK1
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - ACTIVE (Last Updated: 7 months ago) - Chassis Mount Module - - - - - 15A - - - -40°C~150°C TJ - - - - - Active 1 (Unlimited) - - - - - - - - - - A1C15S12 - - - Three Phase Inverter with Brake - - - - - 142.8W - - - Three Phase Bridge Rectifier - - 100μA 1200V - - - 2.45V @ 15V, 15A - - Trench Field Stop - Yes - 985pF @ 25V - - - - - - RoHS Compliant -
                              A1C15S12M3
                              A1C15S12M3

                              STMicroelectronics
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Infineon Technologies F3L300R12ME4B23BOSA1
                              Mfr. Тип
                              F3L300R12ME4B23BOSA1
                              Anlielectronics Тип

                              		Infineon Technologies
                              IGBT MODULE VCES 650V 300A
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 16 Weeks - - Chassis Mount Module NO - SILICON - - 450A 2 - - -40°C~150°C - 2002 - - - Active Not Applicable 11 EAR99 - UL APPROVED - UPPER UNSPECIFIED NOT SPECIFIED compliant NOT SPECIFIED - - R-XUFM-X11 - 2 Independent - - - ISOLATED - 1550W POWER CONTROL - N-CHANNEL Standard - - 1mA 1200V - - 290 ns 2.1V @ 15V, 300A - 960 ns Trench Field Stop - Yes - 19nF @ 25V - - - - - - RoHS Compliant -
                                F3L300R12ME4B23BOSA1
                                F3L300R12ME4B23BOSA1

                                Infineon Technologies
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                IXYS MIEB101H1200EH
                                Mfr. Тип
                                MIEB101H1200EH
                                Anlielectronics Тип

                                		IXYS
                                IGBT Modules IGBT Module H Bridge
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - - Chassis Mount Chassis Mount E3 - - SILICON 1.2kV - - 4 - - -40°C~125°C TJ Bulk - - - - Active 1 (Unlimited) 14 - - UL RECOGNIZED 630W UPPER UNSPECIFIED - - - - - R-PUFM-X14 - Full Bridge Inverter - - - ISOLATED - 630W POWER CONTROL - N-CHANNEL Standard 2.2V 183A 300μA 1200V - 7.43nF 175 ns 2.2V @ 15V, 100A - 700 ns - - No 20V 7.43nF @ 25V - - - - - - ROHS3 Compliant Lead Free
                                  MIEB101H1200EH
                                  MIEB101H1200EH

                                  IXYS
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  STMicroelectronics A1C15S12M3-F
                                  Mfr. Тип
                                  A1C15S12M3-F
                                  Anlielectronics Тип

                                  		STMicroelectronics
                                  IGBT TRENCH 1200V 15A ACEPACK1
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - ACTIVE (Last Updated: 7 months ago) - Chassis Mount Module - - - - - 15A - - - -40°C~150°C TJ - - - - - Active 1 (Unlimited) - - - - - - - - - - A1C15S12 - - - Three Phase Inverter with Brake - - - - - 142.8W - - - Three Phase Bridge Rectifier - - 100μA 1200V - - - 2.45V @ 15V, 15A - - Trench Field Stop - Yes - 985pF @ 25V - - - - - - RoHS Compliant -
                                    A1C15S12M3-F
                                    A1C15S12M3-F

                                    STMicroelectronics
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    IXYS MUBW20-06A7
                                    Mfr. Тип
                                    MUBW20-06A7
                                    Anlielectronics Тип

                                    		IXYS
                                    Trans IGBT Module N-CH 600V 35A 24-Pin E2-Pack
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 20 Weeks - Chassis Mount, Screw Chassis Mount E2 - 2 SILICON 600V - - 7 - - -40°C~125°C TJ Bulk 2001 - e3 yes Active 1 (Unlimited) 24 - Matte Tin (Sn) - with Nickel (Ni) barrier LOW SWITCHING LOSS, LOW SATURATION VOLTAGE 125W UPPER UNSPECIFIED NOT SPECIFIED - NOT SPECIFIED MUBW - - Not Qualified Three Phase Inverter with Brake - - - ISOLATED - 125W POWER CONTROL - N-CHANNEL Three Phase Bridge Rectifier 2.3V 35A 600μA - 1.6kV 1.1nF 110 ns 2.3V @ 15V, 20A - 330 ns NPT - Yes - 1.1nF @ 25V - - - - - - ROHS3 Compliant -
                                      MUBW20-06A7
                                      MUBW20-06A7

                                      IXYS
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      IXYS MUBW15-12A7
                                      Mfr. Тип
                                      MUBW15-12A7
                                      Anlielectronics Тип

                                      		IXYS
                                      IGBT MODULE 1200V 35A 180W E2
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 20 Weeks - Chassis Mount Chassis Mount E2 - 2 SILICON 1.2kV - - 7 - - -40°C~125°C TJ - 2004 - e3 yes Active 1 (Unlimited) 24 - Matte Tin (Sn) - with Nickel (Ni) barrier LOW SWITCHING LOSS, LOW SATURATION VOLTAGE 180W UPPER UNSPECIFIED NOT SPECIFIED - NOT SPECIFIED MUBW - - Not Qualified Three Phase Inverter with Brake - - - ISOLATED - 180W POWER CONTROL - N-CHANNEL Three Phase Bridge Rectifier 2.6V 35A 900μA 1200V 1.6kV 1nF 170 ns 2.6V @ 15V, 15A - 570 ns NPT - Yes - 1nF @ 25V - - - - - - ROHS3 Compliant Lead Free
                                        MUBW15-12A7
                                        MUBW15-12A7

                                        IXYS
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        Infineon Technologies IFS100B12N3E4PB11BPSA1
                                        Mfr. Тип
                                        IFS100B12N3E4PB11BPSA1
                                        Anlielectronics Тип

                                        		Infineon Technologies
                                        IGBT MOD 1200V 150A 515W
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 16 Weeks - - Chassis Mount Module NO - SILICON - - 150A 6 - - -40°C~150°C - 2015 - - - Active 1 (Unlimited) 34 EAR99 - UL RECOGNIZED - UPPER UNSPECIFIED - - - - - R-XUFM-X34 - Full Bridge - - - ISOLATED - 515W POWER CONTROL - N-CHANNEL Standard - - 1mA 1200V - - 210 ns 2.1V @ 15V, 100A - 610 ns Trench Field Stop - Yes - 6.2nF @ 25V - - - - - - ROHS3 Compliant -
                                          IFS100B12N3E4PB11BPSA1
                                          IFS100B12N3E4PB11BPSA1

                                          Infineon Technologies
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - IGBTs - Modules definition: An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as ... Transistors - IGBTs - Modules Product Listing: MWI100-12T8T,MID200-12A4,IXBN75N170,FD650R17IE4BOSA2,FS200R12KT4RPBPSA1.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - IGBTs - Modules has 5133 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.