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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Exterior Housing Material | Connector | Connector pinout layout | Contacts pitch | Electrical mounting | Ihs Manufacturer | Kind of connector | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Row pitch | Spatial orientation | Turn-off Time-Nom (toff) | Turn-on Time-Nom (ton) | Type of connector | ECCN Code | Additional Feature | Terminal Position | Terminal Form | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Profile | Fall Time-Max (tf) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипSGH80N60UFDAnlielectronics Тип | Samsung Semiconductor |
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | - | - | - | - | SAMSUNG SEMICONDUCTOR INC | - | - | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-3P | - | - | 167 ns | 50 ns | - | EAR99 | HIGH SPEED SWITCHING | SINGLE | THROUGH-HOLE | unknown | 2 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | - | MOTOR CONTROL | N-CHANNEL | - | 200 W | 80 A | 600 V | 20 V | 7.5 V | - | 280 ns | ||
| SGH80N60UFD | |||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSGL40N150DAnlielectronics Тип | Samsung Semiconductor |
Insulated Gate Bipolar Transistor, 40A I(C), 1500V V(BR)CES, N-Channel, TO-264, TO-264, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | - | SAMSUNG SEMICONDUCTOR INC | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-264 | - | - | 680 ns | 1300 ns | - | EAR99 | HIGH SPEED SWITCHING | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | TO-264 | - | 40 A | 1500 V | - | - | - | - | ||
| SGL40N150D | |||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSGH30N60RUFAnlielectronics Тип | Samsung Semiconductor |
Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | - | SAMSUNG SEMICONDUCTOR INC | - | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-3P | - | - | 160 ns | 44 ns | - | EAR99 | HIGH SPEED SWITCHING | SINGLE | THROUGH-HOLE | unknown | 2 | R-PSFM-T3 | Not Qualified | SINGLE | - | MOTOR CONTROL | N-CHANNEL | - | - | 48 A | 600 V | - | - | - | - | ||
| SGH30N60RUF | |||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSGL60N90DAnlielectronics Тип | Samsung Semiconductor |
Description: Insulated Gate Bipolar Transistor, 60A I(C), 900V V(BR)CES, N-Channel, TO-264, TO-264, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | - | SAMSUNG SEMICONDUCTOR INC | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-264 | - | - | 500 ns | 350 ns | - | EAR99 | HIGH SPEED SWITCHING | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | TO-264 | - | 60 A | 900 V | - | - | - | - | ||
| SGL60N90D | |||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSGR2N60UFDAnlielectronics Тип | Samsung Semiconductor |
Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | - | - | - | - | - | SAMSUNG SEMICONDUCTOR INC | - | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | TO-252 | - | - | 132 ns | 46 ns | - | EAR99 | HIGH SPEED SWITCHING | SINGLE | GULL WING | unknown | 3 | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | - | MOTOR CONTROL | N-CHANNEL | - | - | 2.4 A | 600 V | - | - | - | - | ||
| SGR2N60UFD | |||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSGP13N60UFDAnlielectronics Тип | Samsung Semiconductor |
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | - | SAMSUNG SEMICONDUCTOR INC | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | SFM | - | - | 160 ns | 41 ns | - | EAR99 | HIGH SPEED SWITCHING | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | - | MOTOR CONTROL | N-CHANNEL | TO-220 | 60 W | 13 A | 600 V | 20 V | 7.5 V | - | 280 ns | ||
| SGP13N60UFD | |||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSGP13N60UFAnlielectronics Тип | Samsung Semiconductor |
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | - | SAMSUNG SEMICONDUCTOR INC | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | SFM | - | - | 160 ns | 41 ns | - | EAR99 | HIGH SPEED SWITCHING | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE | - | MOTOR CONTROL | N-CHANNEL | TO-220 | 60 W | 13 A | 600 V | 20 V | 7.5 V | - | 280 ns | ||
| SGP13N60UF | |||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSGR20N40LAnlielectronics Тип | Samsung Semiconductor |
Insulated Gate Bipolar Transistor, 450V V(BR)CES, N-Channel, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | 1 | socket | 2x37 | 2.54mm | THT | SAMSUNG SEMICONDUCTOR INC | female | - | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | TO-252 | 2.54mm | straight | 2800 ns | 1200 ns | pin strips | EAR99 | - | SINGLE | GULL WING | unknown | 3 | R-PSSO-G2 | Not Qualified | SINGLE | - | - | N-CHANNEL | - | - | - | 450 V | - | - | beryllium copper | - | ||
| SGR20N40L | |||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSGL40N150Anlielectronics Тип | Samsung Semiconductor |
Description: Insulated Gate Bipolar Transistor, 40A I(C), 1500V V(BR)CES, N-Channel, TO-264, TO-264, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | - | SAMSUNG SEMICONDUCTOR INC | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-264 | - | - | 500 ns | 700 ns | - | EAR99 | HIGH SPEED SWITCHING | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE | - | POWER CONTROL | N-CHANNEL | TO-264 | - | 40 A | 1500 V | - | - | - | - | ||
| SGL40N150 |
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