Transistors - JFETs Products For Sale - PDF - Discrete Semiconductor Products -Page10

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Lifecycle Status	Contact Plating	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Weight	Number of Terminals	Transistor Element Material	Brand	Breakdown Voltage / V	Development Kit	Factory Pack QuantityFactory Pack Quantity	Id - Continuous Drain Current	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Maximum Operating Temperature	Mfr	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting Styles	Number of Elements	Operating Temperature (Max.)	Operating Temperature-Max	Package	Package Body Material	Package Description	Package Shape	Package Style	Part # Aliases	Part Life Cycle Code	Part Package Code	Pd - Power Dissipation	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Transistor Polarity	Unit Weight	Vds - Drain-Source Breakdown Voltage	Vgs - Gate-Source Breakdown Voltage	Vgs th - Gate-Source Threshold Voltage	Operating Temperature	Packaging	Published	Series	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Additional Feature	HTS Code	Subcategory	Voltage - Rated DC	Max Power Dissipation	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Reach Compliance Code	Current Rating	Time@Peak Reflow Temperature-Max (s)	Base Part Number	Pin Count	JESD-30 Code	Qualification Status	Operating Frequency	Configuration	Element Configuration	Operating Mode	Power Dissipation	Output Power	Power - Max	FET Type	Transistor Application	Halogen Free	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Polarity/Channel Type	Product Type	Transistor Type	Operating Temperature Range	Continuous Drain Current (ID)	JEDEC-95 Code	Gate to Source Voltage (Vgs)	Gain	Drain Current-Max (Abs) (ID)	Drain-source On Resistance-Max	Drain to Source Breakdown Voltage	Input Capacitance	DS Breakdown Voltage-Min	FET Technology	Power Dissipation-Max (Abs)	Max Junction Temperature (Tj)	Drain to Source Resistance	Feedback Cap-Max (Crss)	Turn Off Time-Max (toff)	Turn On Time-Max (ton)	Highest Frequency Band	Current - Drain (Idss) @ Vds (Vgs=0)	Voltage - Cutoff (VGS off) @ Id	Voltage - Breakdown (V(BR)GSS)	Resistance - RDS(On)	Product Category	Height	Length	Width	Radiation Hardening	REACH SVHC	RoHS Status	Lead Free

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Lifecycle Status	Contact Plating	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Weight	Number of Terminals	Transistor Element Material	Brand	Breakdown Voltage / V	Development Kit	Factory Pack QuantityFactory Pack Quantity	Id - Continuous Drain Current	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Maximum Operating Temperature	Mfr	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting Styles	Number of Elements	Operating Temperature (Max.)	Operating Temperature-Max	Package	Package Body Material	Package Description	Package Shape	Package Style	Part # Aliases	Part Life Cycle Code	Part Package Code	Pd - Power Dissipation	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Transistor Polarity	Unit Weight	Vds - Drain-Source Breakdown Voltage	Vgs - Gate-Source Breakdown Voltage	Vgs th - Gate-Source Threshold Voltage	Operating Temperature	Packaging	Published	Series	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Additional Feature	HTS Code	Subcategory	Voltage - Rated DC	Max Power Dissipation	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Reach Compliance Code	Current Rating	Time@Peak Reflow Temperature-Max (s)	Base Part Number	Pin Count	JESD-30 Code	Qualification Status	Operating Frequency	Configuration	Element Configuration	Operating Mode	Power Dissipation	Output Power	Power - Max	FET Type	Transistor Application	Halogen Free	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Polarity/Channel Type	Product Type	Transistor Type	Operating Temperature Range	Continuous Drain Current (ID)	JEDEC-95 Code	Gate to Source Voltage (Vgs)	Gain	Drain Current-Max (Abs) (ID)	Drain-source On Resistance-Max	Drain to Source Breakdown Voltage	Input Capacitance	DS Breakdown Voltage-Min	FET Technology	Power Dissipation-Max (Abs)	Max Junction Temperature (Tj)	Drain to Source Resistance	Feedback Cap-Max (Crss)	Turn Off Time-Max (toff)	Turn On Time-Max (ton)	Highest Frequency Band	Current - Drain (Idss) @ Vds (Vgs=0)	Voltage - Cutoff (VGS off) @ Id	Voltage - Breakdown (V(BR)GSS)	Resistance - RDS(On)	Product Category	Height	Length	Width	Radiation Hardening	REACH SVHC	RoHS Status	Lead Free
	Mfr. Тип MMBF4393 Anlielectronics Тип	ON Semiconductor	JFET N-CH 30V 350MW SOT23 Сборник данных Сравнение	Min.:1 Mult.:1	14 Weeks	LIFETIME (Last Updated: 3 days ago)	Tin	Surface Mount	Surface Mount	TO-236-3, SC-59, SOT-23-3	-	3	-	30mg	-	SILICON	-	-30V	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-55°C~150°C TJ	Tape & Reel (TR)	2000	-	e3	yes	Obsolete	1 (Unlimited)	3	EAR99	-	-	-	-	8541.21.00.95	-	30V	350mW	DUAL	GULL WING	-	-	30mA	-	MBF4393	-	-	-	-	-	Single	DEPLETION MODE	350mW	-	-	N-Channel	SWITCHING	-	14pF @ 20V	-	-	-	-	-	30mA	-	-30V	-	-	-	-	-	-	JUNCTION	-	-	100Ohm	-	-	-	-	5mA @ 20V	500mV @ 1nA	-	100Ohm	-	930μm	2.92mm	1.3mm	No	No SVHC	ROHS3 Compliant	Lead Free
MMBF4393 ON Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип BSB056N10NN3GXUMA1/SAMPLE Anlielectronics Тип	Infineon	- Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSB056N10NN3GXUMA1/SAMPLE Infineon RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MMBFU310LT1 Anlielectronics Тип	ON Semiconductor	JFET N-CH 25V 0.225W SOT23 Сборник данных Сравнение	Min.:1 Mult.:1	-	LAST SHIPMENTS (Last Updated: 1 week ago)	-	-	-	SOT-23-3	YES	3	-	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Cut Tape (CT)	2010	-	e0	no	Obsolete	1 (Unlimited)	3	EAR99	-	Tin/Lead (Sn/Pb)	150°C	-	-	-	25V	225mW	DUAL	GULL WING	240	not_compliant	10mA	30	-	3	-	Not Qualified	-	-	Single	DEPLETION MODE	225mW	-	-	-	AMPLIFIER	-	-	25V	N-CHANNEL	-	-	-	-	-	25V	-	-	-	25V	5pF	-	JUNCTION	-	-	-	-	-	-	ULTRA HIGH FREQUENCY B	-	-	-	-	-	-	-	-	-	-	Non-RoHS Compliant	Contains Lead
MMBFU310LT1 ON Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип TF222B-B4-TL-E-ON Anlielectronics Тип	onsemi	N CHANNEL SILICON JFET CONDENSER Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	onsemi	-	-	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TF222B-B4-TL-E-ON onsemi RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MQ2N4857UB Anlielectronics Тип	Microchip Technology	JFET Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	Through Hole	TO-206AA, TO-18-3 Metal Can	-	-	TO-18 (TO-206AA)	-	-	-	Microchip Technology	-	-	1	-	-	Microchip	-	-	Microchip Technology	-	-	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	Details	-	-	-	-	-	-	-65°C ~ 200°C (TJ)	-	-	-	-	-	-	-	-	-	JFET	-	-	-	-	Transistors	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	360 mW	N-Channel	-	-	18pF @ 10V	40 V	-	JFETs	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	20 mA @ 15 V	2 V @ 500 pA	40 V	40 Ohms	JFET	-	-	-	-	-	-	-
MQ2N4857UB Microchip Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип PMBF4391,215 Anlielectronics Тип	NXP USA Inc.	JFET N-CH 40V 250MW SOT23 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	-	-	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	YES	-	-	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	150°C TJ	Tape & Reel (TR)	1997	-	e3	-	Not For New Designs	1 (Unlimited)	3	EAR99	-	Tin (Sn)	-	-	8541.21.00.95	-	-	-	DUAL	GULL WING	260	-	-	40	MBF4391	3	R-PDSO-F3	Not Qualified	-	SINGLE WITH BUILT-IN DIODE	-	DEPLETION MODE	-	-	250mW	N-Channel	SWITCHING	-	14pF @ 20V	-	-	-	-	-	-	-	-	-	0.012A	30Ohm	-	-	40V	JUNCTION	0.25W	-	-	3.5 pF	20ns	80ns	-	50mA @ 20V	4V @ 1nA	40V	30Ohm	-	-	-	-	-	-	ROHS3 Compliant	-
PMBF4391,215 NXP USA Inc. RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип NTE460 Anlielectronics Тип	NTE Electronics, Inc	JFET-P-CH AF AMP Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	Through Hole	TO-206AF, TO-72-4 Metal Can	-	-	TO-72	-	-	-	-	-	-	-	-	-	NTE Electronics	NTE460	-	NTE Electronics, Inc	-	-	-	-	-	-	-	Bag	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	300 mW	P-Channel	-	-	20pF @ 10V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2 mA @ 10 V	-	20 V	800 Ohms	-	-	-	-	-	-	-	-
NTE460 NTE Electronics, Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MMBFJ175LT1 Anlielectronics Тип	ON Semiconductor	JFET P-CH 30V 0.225W SOT23 Сборник данных Сравнение	Min.:1 Mult.:1	-	LAST SHIPMENTS (Last Updated: 1 week ago)	-	-	-	SOT-23-3	YES	3	-	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	150°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Cut Tape (CT)	2006	-	e0	no	Obsolete	1 (Unlimited)	3	EAR99	-	Tin/Lead (Sn/Pb)	-	-	8541.21.00.95	-	-25V	225mW	DUAL	GULL WING	240	not_compliant	-60mA	30	-	3	-	Not Qualified	-	-	Single	DEPLETION MODE	-	-	-	-	CHOPPER	-	-	-	P-CHANNEL	-	-	-	60mA	-	30V	-	-	125Ohm	-	11pF	-	JUNCTION	-	-	-	5.5 pF	-	-	-	-	-	-	-	-	-	-	-	-	-	Non-RoHS Compliant	Contains Lead
MMBFJ175LT1 ON Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип QPD1003 Anlielectronics Тип	Qorvo	RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	RF-565	-	-	-	-	-	-	-	-	QPD1003PCB401	18	15 A	-	-	-	+ 85 C	-	- 40 C	Yes	-	SMD/SMT	-	-	-	-	-	-	-	-	1131389 1131389	-	-	370 W	-	-	-	Details	-	N-Channel	3.691596 oz	50 V	145 V	- 2.8 V	-	Tray	-	QPD1003	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.2 GHz to 1.4 GHz	Single	-	-	-	540 W	-	-	-	-	-	-	-	-	HEMT	- 40 C to + 85 C	-	-	-	19.9 dB	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
QPD1003 Qorvo RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип TF252TH-4-TL-H Anlielectronics Тип	ON Semiconductor	JFET N-CH 1MA 100MW VTFP Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	Surface Mount	3-SMD, Flat Lead	YES	3	-	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	150°C TJ	Tape & Reel (TR)	2007	-	e6	yes	Obsolete	1 (Unlimited)	3	EAR99	-	Tin/Bismuth (Sn/Bi)	-	-	8541.21.00.95	-	-	100mW	DUAL	-	-	-	-	-	TF252	3	-	-	-	-	Single	DEPLETION MODE	-	-	-	N-Channel	AMPLIFIER	Halogen Free	3.1pF @ 2V	2V	-	-	-	-	1mA	-	-20V	-	0.001A	-	-	-	-	JUNCTION	-	-	-	-	-	-	-	140μA @ 2V	100mV @ 1μA	-	-	-	340μm	1.4mm	800μm	-	-	RoHS Compliant	Lead Free
TF252TH-4-TL-H ON Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MMBF4117 Anlielectronics Тип	ON Semiconductor	JFET N-CH 40V 0.225W SOT23 Сборник данных Сравнение	Min.:1 Mult.:1	16 Weeks	ACTIVE (Last Updated: 1 week ago)	Tin	Surface Mount	Surface Mount	TO-236-3, SC-59, SOT-23-3	-	3	-	30mg	-	SILICON	-	-40V	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-55°C~150°C TJ	Tape & Reel (TR)	2008	-	e3	yes	Active	1 (Unlimited)	3	EAR99	-	-	-	-	8541.21.00.95	-	40V	225mW	DUAL	GULL WING	-	-	50mA	-	MBF4117	-	-	-	-	-	Single	DEPLETION MODE	225mW	-	-	N-Channel	SWITCHING	-	3pF @ 10V	40V	-	-	-	-	90μA	-	-40V	-	-	-	-	-	-	JUNCTION	-	-	-	1.5 pF	-	-	-	30μA @ 10V	600mV @ 1nA	-	-	-	930μm	2.92mm	1.3mm	No	No SVHC	ROHS3 Compliant	Lead Free
MMBF4117 ON Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MCH5908H-TL-E Anlielectronics Тип	ON Semiconductor	JFET 2N-CH 0.3W MCPH5 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	ACTIVE (Last Updated: 3 days ago)	-	-	Surface Mount	5-SMD, Flat Leads	-	5	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	150°C TJ	Tape & Reel (TR)	2011	-	e6	yes	Active	1 (Unlimited)	-	EAR99	-	Tin/Bismuth (Sn/Bi)	-	-	-	-	-	300mW	-	-	-	-	-	-	-	5	-	-	-	-	Single	-	-	-	-	2 N-Channel (Dual)	-	-	10.5pF @ 5V	-	-	-	-	-	50mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	16mA @ 5V	300mV @ 100μA	-	-	-	-	-	-	-	-	ROHS3 Compliant	Lead Free
MCH5908H-TL-E ON Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип J304-E3 Anlielectronics Тип	Vishay	- Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	NO	-	-	-	3	SILICON	-	-	-	-	-	VISHAY INTERTECHNOLOGY INC	Vishay Intertechnologies	J304-E3	-	-	-	-	1	-	1	-	150 °C	-	PLASTIC/EPOXY	CYLINDRICAL, O-PBCY-W3	ROUND	CYLINDRICAL	-	Obsolete	TO-92	-	-	-	5.29	-	Yes	-	-	-	-	-	-	-	-	-	e3	-	-	-	-	-	-	Matte Tin (Sn)	-	LOW NOISE	8541.21.00.95	Other Transistors	-	-	BOTTOM	WIRE	-	unknown	-	-	-	3	O-PBCY-W3	Not Qualified	-	SINGLE	-	DEPLETION MODE	-	-	-	-	SWITCHING	-	-	-	N-CHANNEL	-	-	-	-	TO-226AA	-	-	-	-	-	-	-	JUNCTION	0.35 W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
J304-E3 Vishay RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип NPT25100B Anlielectronics Тип	MACOM Technology Solutions	RF JFET Transistors 2.1-2.7GHz 125W Gain 16.5dB GaN Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	10	-	M/A-COM TECHNOLOGY SOLUTIONS INC	-	NPT25100B	-	-	-	-	-	-	-	-	-	-	-	,	-	-	-	Active	-	-	-	NOT SPECIFIED	2.21	Details	Yes	-	0.406091 oz	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NOT SPECIFIED	compliant	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NPT25100B MACOM Technology Solutions RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип J111-E3 Anlielectronics Тип	Vishay	- Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	NO	-	-	-	-	-	-	-	-	-	-	VISHAY INTERTECHNOLOGY INC	Vishay Intertechnologies	J111-E3	-	-	-	-	1	-	-	-	150 °C	-	-	-	-	-	-	Obsolete	-	-	-	-	5.82	-	Yes	-	-	-	-	-	-	-	-	-	e3	-	-	-	-	EAR99	-	Matte Tin (Sn)	-	-	-	Other Transistors	-	-	-	-	-	unknown	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	N-CHANNEL	-	-	-	-	-	-	-	-	-	-	-	-	JUNCTION	0.4 W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
J111-E3 Vishay RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип 2N5461-E3 Anlielectronics Тип	Vishay	- Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	NO	-	-	-	-	-	-	-	-	-	-	VISHAY INTERTECHNOLOGY INC	Vishay Intertechnologies	2N5461-E3	-	-	-	-	1	-	-	-	150 °C	-	-	,	-	-	-	Obsolete	-	-	-	-	5.82	-	Yes	-	-	-	-	-	-	-	-	-	e3	-	-	-	-	EAR99	-	Matte Tin (Sn)	-	-	-	FET General Purpose Small Signal	-	-	-	-	-	unknown	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	P-CHANNEL	-	-	-	-	-	-	-	-	-	-	-	-	JUNCTION	0.31 W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2N5461-E3 Vishay RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип T2G6003028-FL Anlielectronics Тип	Qorvo	RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	NI-200	-	-	-	-	-	-	-	-	-	50	-	-	-	-	-	-	-	Yes	-	-	-	-	-	-	-	-	-	-	T2G6003028 1100007	-	-	-	-	-	-	Details	-	-	0.427360 oz	-	-	-	-	Tray	-	T2G6003028	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	HEMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
T2G6003028-FL Qorvo RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип SMMBFJ177LT1G Anlielectronics Тип	ON Semiconductor	Trans JFET P-CH 3-Pin SOT-23 T/R Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	ACTIVE (Last Updated: 1 day ago)	-	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	-	3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-55°C~150°C TJ	Tape & Reel (TR)	2005	Automotive, AEC-Q101	e3	yes	Active	1 (Unlimited)	-	EAR99	-	Tin (Sn)	-	-	-	-	-	225mW	-	-	-	-	-	-	-	3	-	-	-	-	Single	-	-	-	-	P-Channel	-	-	11pF @ 10V VGS	-	-	-	-	-	-	-	-25V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.5mA @ 15V	800mV @ 10nA	30V	300Ohm	-	-	-	-	No	-	ROHS3 Compliant	Lead Free
SMMBFJ177LT1G ON Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MMBF5457 Anlielectronics Тип	ON Semiconductor	JFET N-CH 25V 350MW SOT23 Сборник данных Сравнение	Min.:1 Mult.:1	42 Weeks	ACTIVE (Last Updated: 1 week ago)	Tin	Surface Mount	Surface Mount	TO-236-3, SC-59, SOT-23-3	-	3	-	30mg	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-55°C~150°C TJ	Tape & Reel (TR)	2000	-	e3	yes	Active	1 (Unlimited)	3	EAR99	-	-	-	-	-	-	25V	350mW	DUAL	GULL WING	-	-	10mA	-	MBF5457	-	-	-	-	-	Single	DEPLETION MODE	350mW	-	-	N-Channel	SWITCHING	-	7pF @ 15V	25V	-	-	-	-	5mA	-	-2.5V	-	-	-	-	-	-	JUNCTION	-	150°C	-	-	-	-	-	1mA @ 15V	500mV @ 10nA	-	-	-	1.11mm	2.92mm	1.3mm	No	No SVHC	ROHS3 Compliant	Lead Free
MMBF5457 ON Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип PMBFJ113,215 Anlielectronics Тип	NXP USA Inc.	JFET N-CH 40V 0.3W SOT23 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	YES	-	-	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	150°C TJ	Tape & Reel (TR)	1997	-	e3	-	Obsolete	1 (Unlimited)	3	EAR99	-	Tin (Sn)	-	-	8541.21.00.95	-	-	-	DUAL	GULL WING	260	-	-	40	MBFJ113	3	R-PDSO-G3	Not Qualified	-	SINGLE	-	DEPLETION MODE	-	-	300mW	N-Channel	SWITCHING	-	6pF @ 10V VGS	-	-	-	-	-	-	TO-236AB	-	-	-	100Ohm	-	-	40V	JUNCTION	0.3W	-	-	-	-	-	-	2mA @ 15V	3V @ 1μA	40V	100Ohm	-	-	-	-	-	-	ROHS3 Compliant	-
PMBFJ113,215 NXP USA Inc. RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

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Transistors - JFETs definition: The JFET(Junction Gate Field-Effect Transistor) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconduc... Transistors - JFETs Product Listing: MMBF4393,BSB056N10NN3GXUMA1/SAMPLE,MMBFU310LT1,TF222B-B4-TL-E-ON,MQ2N4857UB.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - JFETs has 1626 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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