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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Mounting Type | Surface Mount | Dielectric Material | Material - Insulation | Body Material | Shape | Number of Terminals | Transistor Element Material | Center Contact Plating | Center Contact Material | Exterior Housing Material | (Select First, Then Apply Filters) Compatible Series | Cable | Cable type | Connector | Connector pinout layout | Contacts pitch | Drain Current-Max (ID) | Electrical mounting | Gross Weight | Ihs Manufacturer | Kind of connector | Manufacturer Package Code | Mfr | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Spatial orientation | Type of connector | Operating Temperature | Packaging | Series | Part Status | ECCN Code | Connector Type | Type | Number of Positions | Color | Additional Feature | HTS Code | Fastening Type | Terminal Position | Terminal Form | Style | Reach Compliance Code | Pin Count | Termination Style | JESD-30 Code | Qualification Status | Actuator Type | Panel Cutout Dimensions | Configuration | Polarization | Impedance | Number of Levels | Operating Mode | Illumination | Case Connection | Architecture | Wire Gauge or Range - AWG | Transistor Application | Bandwidth | Polarity/Channel Type | Wire Gauge or Range - mm² | Gain | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | Stripping Length | DS Breakdown Voltage-Min | FET Technology | Body Finish | Convert From (Adapter End) | Convert To (Adapter End) | Requires | Conversion Type | Adapter Type | Center Gender | Adapter Series | End - Size | Feedback Cap-Max (Crss) | Highest Frequency Band | Profile | Power Dissipation Ambient-Max | Power Gain-Min (Gp) | Height | Length | Width | Material Flammability Rating |
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  | Mfr. ТипFLM1213-4FAnlielectronics Тип | FUJITSU Semiconductor Limited |
Description: RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | Polyamide (PA), Nylon | - | - | 2 | GALLIUM ARSENIDE | - | - | 1 | - | RG174 | - | - | - | - | 1.3 A | - | - | FUJITSU SEMICONDUCTOR AMERICA INC | - | CASE IA | - | - | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | Bulk | - | Active | EAR99 | - | Ground, Earth | 2 | Green, Yellow | HIGH RELIABILITY | - | - | DUAL | FLAT | - | unknown | 4 | Push In, Spring | R-CDFM-F2 | Not Qualified | - | - | SINGLE | vertical | 50 Ohm | 1 | DEPLETION MODE | - | SOURCE | 8.2mm | 8-20 AWG | - | 90/280 MHz | N-CHANNEL | 0.5-10mm² | 3 dBi | - | - | 10mm ~ 12mm | 15 V | JUNCTION | - | - | - | - | - | - | - | - | - | - | KU BAND | - | - | - | 85 mm | - | Ф30 mm | UL94 V-0 | ||
| FLM1213-4F | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFLM4450-18FAnlielectronics Тип | FUJITSU Semiconductor Limited |
Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | 2 | GALLIUM ARSENIDE | - | - | 1 | - | - | - | socket | 1x14 | 2.54mm | 6 A | THT | - | FUJITSU SEMICONDUCTOR AMERICA INC | female | CASE IK | - | - | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | straight | pin strips | - | - | - | - | EAR99 | - | - | - | - | HIGH RELIABILITY | - | - | DUAL | FLAT | - | unknown | 3 | - | R-CDFM-F2 | Not Qualified | - | - | SINGLE | - | - | - | DEPLETION MODE | - | SOURCE | - | - | - | - | N-CHANNEL | - | - | - | - | - | 15 V | JUNCTION | - | - | - | - | - | - | - | - | - | - | C BAND | beryllium copper | - | - | - | - | - | - | ||
| FLM4450-18F | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFHC40LGAnlielectronics Тип | FUJITSU Semiconductor Limited |
RF Small Signal Field-Effect Transistor, HERMETIC SEALED, METAL CERAMIC PACKAGE-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | 4 | - | - | - | - | - | - | - | socket | 1x14 | 2.54mm | - | THT | - | FUJITSU SEMICONDUCTOR AMERICA INC | female | CASE LG | - | - | - | CERAMIC, METAL-SEALED COFIRED | DISK BUTTON, O-CRDB-F4 | ROUND | DISK BUTTON | Transferred | - | straight | pin strips | - | - | - | - | EAR99 | - | - | - | - | - | 8541.21.00.75 | - | RADIAL | FLAT | - | unknown | 4 | - | O-CRDB-F4 | Not Qualified | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | beryllium copper | - | - | - | - | - | - | ||
| FHC40LG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFLL200IB-2Anlielectronics Тип | FUJITSU Semiconductor Limited |
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | 2 | GALLIUM ARSENIDE | - | - | - | - | - | - | - | - | - | 6 A | - | - | FUJITSU SEMICONDUCTOR AMERICA INC | - | CASE IB | - | 1 | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | - | - | - | - | HIGH RELIABILITY | - | - | DUAL | FLAT | - | unknown | 3 | - | R-CDFM-F2 | Not Qualified | - | - | SINGLE | - | - | - | DEPLETION MODE | - | SOURCE | - | - | AMPLIFIER | - | N-CHANNEL | - | - | - | - | - | 15 V | JUNCTION | - | - | - | - | - | - | - | - | - | - | L BAND | - | - | - | - | - | - | - | ||
| FLL200IB-2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFLM5964-8FAnlielectronics Тип | FUJITSU Semiconductor Limited |
Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | 2 | GALLIUM ARSENIDE | - | - | - | - | - | - | - | - | - | 2.6 A | - | - | FUJITSU SEMICONDUCTOR AMERICA INC | - | CASE IB | - | 1 | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | - | - | - | - | HIGH RELIABILITY | - | - | DUAL | FLAT | - | unknown | 3 | - | R-CDFM-F2 | Not Qualified | - | - | SINGLE | - | - | - | DEPLETION MODE | - | SOURCE | - | - | - | - | N-CHANNEL | - | - | - | - | - | 15 V | JUNCTION | - | - | - | - | - | - | - | - | - | - | C BAND | - | - | - | - | - | - | - | ||
| FLM5964-8F | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFLM1414-12FAnlielectronics Тип | FUJITSU Semiconductor Limited |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | 2 | GALLIUM ARSENIDE | - | - | - | - | - | - | - | - | - | 4.5 A | - | - | FUJITSU SEMICONDUCTOR AMERICA INC | - | CASE IB | - | 1 | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | - | - | - | - | HIGH RELIABILITY | - | - | DUAL | FLAT | - | unknown | 3 | - | R-CDFM-F2 | Not Qualified | - | - | SINGLE | - | - | - | DEPLETION MODE | - | SOURCE | - | - | - | - | N-CHANNEL | - | - | - | - | - | 15 V | JUNCTION | - | - | - | - | - | - | - | - | - | - | KU BAND | - | - | - | - | - | - | - | ||
| FLM1414-12F | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFLL600IQ-3Anlielectronics Тип | FUJITSU Semiconductor Limited |
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | 4 | GALLIUM ARSENIDE | - | - | - | - | - | - | - | - | - | 15 A | - | - | FUJITSU SEMICONDUCTOR AMERICA INC | - | CASE IQ | - | 1 | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | - | - | - | - | HIGH RELIABILITY | - | - | DUAL | FLAT | - | unknown | 5 | - | R-CDFM-F4 | Not Qualified | - | - | SINGLE | - | - | - | DEPLETION MODE | - | SOURCE | - | - | AMPLIFIER | - | N-CHANNEL | - | - | - | - | - | 15 V | JUNCTION | - | - | - | - | - | - | - | - | - | - | L BAND | - | - | - | - | - | - | - | ||
| FLL600IQ-3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFLM3439-4FAnlielectronics Тип | FUJITSU Semiconductor Limited |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | 2 | GALLIUM ARSENIDE | - | - | - | - | - | - | - | - | - | 1.3 A | - | - | FUJITSU LTD | - | CASE IB | - | 1 | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | - | - | - | - | HIGH RELIABILITY | - | - | DUAL | FLAT | - | unknown | 3 | - | R-CDFM-F2 | Not Qualified | - | - | SINGLE | - | - | - | DEPLETION MODE | - | SOURCE | - | - | AMPLIFIER | - | N-CHANNEL | - | - | - | - | - | 15 V | JUNCTION | - | - | - | - | - | - | - | - | - | - | C BAND | - | - | - | - | - | - | - | ||
| FLM3439-4F | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFLM5964-6FAnlielectronics Тип | FUJITSU Semiconductor Limited |
Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | 2 | GALLIUM ARSENIDE | - | - | - | - | - | - | - | - | - | 1.9 A | - | - | FUJITSU SEMICONDUCTOR AMERICA INC | - | CASE IB | - | 1 | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | - | - | - | - | HIGH RELIABILITY | - | - | DUAL | FLAT | - | unknown | 3 | - | R-CDFM-F2 | Not Qualified | - | - | SINGLE | - | - | - | DEPLETION MODE | - | SOURCE | - | - | - | - | N-CHANNEL | - | - | - | - | - | 15 V | JUNCTION | - | - | - | - | - | - | - | - | - | - | C BAND | - | - | - | - | - | - | - | ||
| FLM5964-6F | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFLK027WGAnlielectronics Тип | FUJITSU Semiconductor Limited |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | 2 | GALLIUM ARSENIDE | - | - | 1 | har-switch, 22.3mm | - | - | - | - | - | - | - | 62.40 | FUJITSU SEMICONDUCTOR AMERICA INC | - | CASE WG | - | - | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | - | - | Bulk | har-switch | Active | EAR99 | DIN 5 pin - Din 5 pin, metal color - silver | Momentary | - | - | HIGH RELIABILITY | - | - | DUAL | FLAT | - | unknown | 4 | - | R-CDFM-F2 | Not Qualified | Selector | 22.3mm (Round) | SINGLE | - | - | - | DEPLETION MODE | Non-Illuminated | SOURCE | - | - | - | - | N-CHANNEL | - | - | - | - | - | 15 V | JUNCTION | - | - | - | Contact Block(s) | - | - | - | - | - | - | KU BAND | - | - | - | - | 1500 mm | - | - | ||
| FLK027WG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFLM1213-6FAnlielectronics Тип | FUJITSU Semiconductor Limited |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Free Hanging (In-Line) | YES | Polytetrafluoroethylene (PTFE) | - | Beryllium Copper | - | 2 | GALLIUM ARSENIDE | Gold | Beryllium Copper | 1 | - | - | - | - | - | - | 2.1 A | - | - | FUJITSU SEMICONDUCTOR AMERICA INC | - | CASE IA | TE Connectivity Linx | - | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | -55°C ~ 125°C | Bag | - | Active | EAR99 | - | - | - | - | HIGH RELIABILITY | - | Snap-On, Snap-On | DUAL | FLAT | Straight | unknown | 4 | - | R-CDFM-F2 | Not Qualified | - | - | SINGLE | - | 50 Ohms | - | DEPLETION MODE | - | SOURCE | - | - | - | - | N-CHANNEL | - | - | - | - | - | 15 V | JUNCTION | Gold | SMPM Jack, Female Socket | SMPM Jack, Female Socket | - | Same Series | Jack to Jack | Female to Female | SMPM to SMPM | 65 GHz | - | KU BAND | - | - | - | - | - | - | - | ||
| FLM1213-6F | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFLC091WFAnlielectronics Тип | FUJITSU Limited |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | Round | - | - | - | - | - | Harting, 30.5mm | - | USB cable with filter | - | - | - | - | - | - | FUJITSU LTD | - | CASE WF | - | - | 175 °C | - | , | - | - | Obsolete | - | - | - | - | Bulk | har-light | Active | EAR99 | - | - | - | white | - | 8541.29.00.95 | - | - | - | - | unknown | 3 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | METAL SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | 4.16 W | - | - | - | - | - | ||
| FLC091WF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFHX45XAnlielectronics Тип | FUJITSU Limited |
Description: RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | 4 | GALLIUM ARSENIDE | - | - | 1 | - | - | - | - | - | - | - | - | - | FUJITSU LTD | - | - | - | - | 175 °C | UNSPECIFIED | UNCASED CHIP, R-XUUC-N4 | RECTANGULAR | UNCASED CHIP | Obsolete | DIE | - | - | - | - | - | - | EAR99 | - | - | - | - | HIGH RELIABILITY, LOW NOISE | 8541.21.00.40 | - | UPPER | NO LEAD | - | unknown | 4 | - | R-XUUC-N4 | Not Qualified | - | - | SINGLE | - | - | - | DEPLETION MODE | - | - | - | - | AMPLIFIER | - | N-CHANNEL | - | - | - | - | - | 3.5 V | HIGH ELECTRON MOBILITY | - | - | - | - | - | - | - | - | - | - | KU BAND | - | 0.29 W | 10 dB | - | - | - | - | ||
| FHX45X | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFLM4450-8FAnlielectronics Тип | FUJITSU Limited |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | 2 | GALLIUM ARSENIDE | - | - | 1 | - | - | - | - | - | - | - | - | - | FUJITSU LTD | - | - | - | - | 175 °C | CERAMIC, METAL-SEALED COFIRED | HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | - | - | - | - | - | EAR99 | - | - | - | - | HIGH RELIABILITY | 8541.29.00.75 | - | DUAL | FLAT | - | unknown | 2 | - | R-CDFM-F2 | Not Qualified | - | - | SINGLE | - | - | - | DEPLETION MODE | - | SOURCE | - | - | AMPLIFIER | - | N-CHANNEL | - | - | - | - | - | 15 V | JUNCTION | - | - | - | - | - | - | - | - | - | - | C BAND | - | 42.8 W | - | - | - | - | - | ||
| FLM4450-8F | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFHX14LPAnlielectronics Тип | FUJITSU Limited |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | 4 | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | FUJITSU LTD | - | - | - | 1 | 150 °C | CERAMIC, METAL-SEALED COFIRED | HERMETIC SEALED, METAL CERAMIC PACKAGE-4 | ROUND | DISK BUTTON | Obsolete | - | - | - | - | - | - | - | EAR99 | - | - | - | - | LOW NOISE, HIGH RELIABILITY | 8541.21.00.95 | - | RADIAL | FLAT | - | compliant | 4 | - | O-CRDB-F4 | Not Qualified | - | - | SINGLE | - | - | - | DEPLETION MODE | - | SOURCE | - | - | AMPLIFIER | - | N-CHANNEL | - | - | - | - | - | 3.5 V | HIGH ELECTRON MOBILITY | - | - | - | - | - | - | - | - | - | - | KU BAND | - | 0.18 W | 11 dB | - | - | - | - | ||
| FHX14LP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFLM1314-12FAnlielectronics Тип | FUJITSU Semiconductor Limited |
KU BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | 2 | GALLIUM ARSENIDE | - | - | - | - | - | - | - | - | - | 5 A | - | - | FUJITSU LTD | - | CASE IB | - | 1 | 175 °C | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | 8541.29.00.95 | - | DUAL | FLAT | - | compliant | 3 | - | R-CDFM-F2 | Not Qualified | - | - | SINGLE | - | - | - | DEPLETION MODE | - | SOURCE | - | - | AMPLIFIER | - | N-CHANNEL | - | - | - | - | - | 15 V | JUNCTION | - | - | - | - | - | - | - | - | - | - | KU BAND | - | 75 W | - | - | - | - | - | ||
| FLM1314-12F | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFLM1314-3FAnlielectronics Тип | FUJITSU Limited |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 4 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | 2 | GALLIUM ARSENIDE | - | - | - | - | - | - | - | - | - | - | - | - | FUJITSU LTD | - | - | - | 1 | 175 °C | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | - | - | - | - | - | EAR99 | - | - | - | - | HIGH RELIABILITY | 8541.29.00.95 | - | DUAL | FLAT | - | unknown | 2 | - | R-CDFM-F2 | Not Qualified | - | - | SINGLE | - | - | - | DEPLETION MODE | - | SOURCE | - | - | AMPLIFIER | - | N-CHANNEL | - | - | - | - | - | 15 V | JUNCTION | - | - | - | - | - | - | - | - | - | - | KU BAND | - | 25 W | - | - | - | - | - | ||
| FLM1314-3F | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFT6112DAnlielectronics Тип | FUJITSU Semiconductor Limited |
Description: Power Field-Effect Transistor, 4.5A I(D), 120V, 0.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, RM-65, 12 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | - | 12 | SILICON | - | - | - | - | - | - | - | - | - | 4.5 A | - | - | FUJITSU SEMICONDUCTOR AMERICA INC | - | - | - | 4 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T12 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | - | - | - | - | LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T12 | Not Qualified | - | - | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | ISOLATED | - | - | SWITCHING | - | N-CHANNEL | - | - | 0.5 Ω | 9 A | - | 120 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | 90 pF | - | - | 40 W | - | - | - | - | - | ||
| FT6112D | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFLM1011-4DAnlielectronics Тип | FUJITSU Limited |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | 2 | GALLIUM ARSENIDE | - | - | - | - | - | - | - | - | - | 1.3 A | - | - | FUJITSU LTD | - | - | - | 1 | 175 °C | CERAMIC, METAL-SEALED COFIRED | HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | - | - | - | - | HIGH RELIABILITY | 8541.29.00.75 | - | DUAL | FLAT | - | unknown | 2 | - | R-CDFM-F2 | Not Qualified | - | - | SINGLE | - | - | - | DEPLETION MODE | - | SOURCE | - | - | - | - | N-CHANNEL | - | - | - | - | - | 15 V | JUNCTION | - | - | - | - | - | - | - | - | - | - | X BAND | - | 25 W | - | - | - | - | - | ||
| FLM1011-4D | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFLL400IP-2Anlielectronics Тип | FUJITSU Semiconductor Limited |
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | 4 | GALLIUM ARSENIDE | - | - | - | - | - | - | - | - | - | 8 A | - | - | FUJITSU SEMICONDUCTOR AMERICA INC | - | CASE IP | - | 1 | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | DUAL | FLAT | - | unknown | 6 | - | R-CDFM-F4 | Not Qualified | - | - | SINGLE | - | - | - | DEPLETION MODE | - | SOURCE | - | - | AMPLIFIER | - | N-CHANNEL | - | - | - | - | - | 15 V | JUNCTION | - | - | - | - | - | - | - | - | - | - | L BAND | - | - | - | - | - | - | - | ||
| FLL400IP-2 |
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