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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Contact plating | Surface Mount | Number of pins | Number of Terminals | Transistor Element Material | Exterior Housing Material | Connector | Connector pinout layout | Contacts pitch | Date Of Intro | Drain Current-Max (ID) | Electrical mounting | Gross weight | Ihs Manufacturer | Kind of connector | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Row pitch | Spatial orientation | Type of connector | Operating temperature | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current rating | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Rated voltage | Feedback Cap-Max (Crss) | Highest Frequency Band | Profile | Power Gain-Min (Gp) | Plating thickness | Flammability rating |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипTK15J60TAnlielectronics Тип | Toshiba America Electronic Components |
TRANSISTOR 15 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-16C1B, SC-65, 3 PIN, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | - | - | - | - | - | 15 A | - | - | TOSHIBA CORP | - | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | SC-65 | - | - | - | - | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.3 Ω | 30 A | 600 V | 118 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | ||
| TK15J60T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип2SK3342(T6L1MURATQAnlielectronics Тип | Toshiba America Electronic Components |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 2SK3342(T6L1MURATQ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипTK15D60UAnlielectronics Тип | Toshiba America Electronic Components |
TRANSISTOR 15 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10V1A, 3 PIN, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | - | - | - | - | - | 15 A | - | - | TOSHIBA CORP | - | 1 | - | PLASTIC/EPOXY | TO-220(W), 3 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | SFM | - | - | - | - | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.3 Ω | 30 A | 600 V | 81 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | ||
| TK15D60U | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSM5G09TUAnlielectronics Тип | Toshiba America Electronic Components |
TRANSISTOR 1500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-2R1A, UFV, 5 PIN, FET General Purpose Small Signal
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 5 | SILICON | - | - | - | - | - | 1.5 A | - | - | TOSHIBA CORP | - | 1 | 125 °C | PLASTIC/EPOXY | 2-2R1A, UFV, 5 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | No | EAR99 | - | - | DUAL | FLAT | NOT SPECIFIED | unknown | - | NOT SPECIFIED | 5 | R-PDSO-F5 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | 0.13 Ω | - | 12 V | - | METAL-OXIDE SEMICONDUCTOR | 0.8 W | - | - | - | - | - | - | - | ||
| SSM5G09TU | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSM6L820R,LXGF(TAnlielectronics Тип | Toshiba America Electronic Components |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SSM6L820R,LXGF(T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSM5P15FEAnlielectronics Тип | Toshiba America Electronic Components |
TRANSISTOR 100 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-2P1B, 3 PIN, FET General Purpose Small Signal
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 5 | SILICON | - | - | - | - | - | 0.1 A | - | - | TOSHIBA CORP | - | 2 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-F5 | RECTANGULAR | SMALL OUTLINE | End Of Life | - | - | - | - | - | - | e0 | - | EAR99 | TIN LEAD | - | DUAL | FLAT | - | unknown | - | - | 3 | R-PDSO-F5 | Not Qualified | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | 12 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 0.15 W | - | - | - | - | - | - | - | ||
| SSM5P15FE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипTK9A20DAAnlielectronics Тип | Toshiba America Electronic Components |
Nch 150V<VDSS≤250V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | - | - | - | - | - | 8.5 A | - | - | TOSHIBA CORP | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | - | Yes | - | - | - | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 0.4 Ω | 34 A | 200 V | 56 mJ | METAL-OXIDE SEMICONDUCTOR | 30 W | - | - | - | - | - | - | - | ||
| TK9A20DA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SK1642Anlielectronics Тип | Toshiba America Electronic Components |
TRANSISTOR 9 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | - | - | - | - | - | 9 A | - | - | TOSHIBA CORP | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | No | - | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.55 Ω | 36 A | 400 V | - | METAL-OXIDE SEMICONDUCTOR | 45 W | - | - | - | - | - | - | - | ||
| 2SK1642 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип3SK260-GRAnlielectronics Тип | Toshiba America Electronic Components |
Description: TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, USQ, 2-2K1B, 4 PIN, FET RF Small Signal
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 4 | SILICON | - | - | - | - | - | 0.03 A | - | - | TOSHIBA CORP | - | 1 | 125 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G4 | RECTANGULAR | SMALL OUTLINE | Active | - | No | - | - | - | - | e0 | No | EAR99 | TIN LEAD | LOW NOISE | DUAL | GULL WING | - | unknown | - | - | 4 | R-PDSO-G4 | Not Qualified | SINGLE | DUAL GATE, DEPLETION MODE | - | AMPLIFIER | N-CHANNEL | - | - | - | 13.5 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | 0.04 pF | VERY HIGH FREQUENCY BAND | - | 21 dB | - | - | ||
| 3SK260-GR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSM5P16FEAnlielectronics Тип | Toshiba America Electronic Components |
TRANSISTOR 100 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-2P1B, 3 PIN, FET General Purpose Small Signal
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 5 | SILICON | - | - | - | - | - | 0.1 A | - | - | TOSHIBA CORP | - | 2 | 150 °C | PLASTIC/EPOXY | 2-2P1B, 3 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | EAR99 | - | - | DUAL | FLAT | NOT SPECIFIED | unknown | - | NOT SPECIFIED | 3 | R-PDSO-F5 | Not Qualified | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | 12 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 0.15 W | - | - | - | - | - | - | - | ||
| SSM5P16FE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SK2949Anlielectronics Тип | Toshiba America Electronic Components |
TRANSISTOR 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10S2B, 3 PIN, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | - | - | - | - | - | 10 A | - | - | TOSHIBA CORP | - | 1 | 150 °C | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Obsolete | - | - | - | - | - | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | 3 | R-PSIP-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.55 Ω | 40 A | 400 V | 360 mJ | METAL-OXIDE SEMICONDUCTOR | 80 W | - | - | - | - | - | - | - | ||
| 2SK2949 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипTPC8106-H(TE12L)Anlielectronics Тип | Toshiba America Electronic Components |
Description: MOSFET P-CH 30V 10A 8-SOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | - | - | - | - | - | - | 10 A | - | - | TOSHIBA CORP | - | 1 | 150 °C | - | , | - | - | Obsolete | - | No | - | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | unknown | - | - | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | P-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 2.4 W | - | - | - | - | - | - | - | ||
| TPC8106-H(TE12L) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипTPCF8004Anlielectronics Тип | Toshiba America Electronic Components |
Nch VDSS≤30V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TOSHIBA CORP | - | - | - | - | - | - | - | End Of Life | - | Yes | - | - | - | - | - | - | EAR99 | - | - | - | - | NOT SPECIFIED | unknown | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| TPCF8004 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипTIM6472-16ELAnlielectronics Тип | Toshiba America Electronic Components |
Description: TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 7-AA05A, 2 PIN, FET RF Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 2 | GALLIUM ARSENIDE | - | - | - | - | - | 18 A | - | - | TOSHIBA CORP | - | 1 | - | CERAMIC, METAL-SEALED COFIRED | HERMETIC SEALED, 7-AA05A, 2 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | - | EAR99 | - | - | DUAL | FLAT | - | unknown | - | - | 2 | R-CDFM-F2 | - | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | 15 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | C BAND | - | - | - | - | ||
| TIM6472-16EL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSM3K7002KFAnlielectronics Тип | Toshiba America Electronic Components |
SMALL SIGNAL, FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 36 Weeks | - | YES | - | 3 | SILICON | - | - | - | - | 2016-02-12 | 0.4 A | - | - | TOSHIBA CORP | - | 1 | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | EAR99 | - | - | DUAL | GULL WING | NOT SPECIFIED | unknown | - | NOT SPECIFIED | - | R-PDSO-G3 | - | SINGLE WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 1.75 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | ||
| SSM3K7002KF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипTPN1R603PLAnlielectronics Тип | Toshiba America Electronic Components |
Small Signal Field-Effect Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | gold-plated | YES | 4 | 8 | SILICON | 1 | socket | 2x2 | 2.54mm | - | 80 A | THT | 0.22 g | TOSHIBA CORP | female | - | 175 °C | PLASTIC/EPOXY | , | SQUARE | SMALL OUTLINE | Active | - | - | 2.54mm | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | DUAL | FLAT | - | unknown | 1.5A | - | - | S-PDSO-F8 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.0025 Ω | 200 A | 30 V | 52 mJ | METAL-OXIDE SEMICONDUCTOR | 104 W | 60V | 200 pF | - | beryllium copper | - | 0.75µm | UL94V-0 | ||
| TPN1R603PL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипTPC8067-HAnlielectronics Тип | Toshiba America Electronic Components |
TRANSISTOR 9000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, THIN, 2-5R1S, SOP-8, FET General Purpose Small Signal
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | gold-plated | YES | 13 | 8 | SILICON | 1 | socket | 1x13 | 2.54mm | - | 9 A | SMT | 0.74 g | TOSHIBA CORP | female | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G8 | RECTANGULAR | SMALL OUTLINE | End Of Life | SOT | - | - | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | DUAL | GULL WING | - | unknown | 3A | - | 8 | R-PDSO-G8 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.033 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | 150V | - | - | beryllium copper | - | 0.75µm | UL94V-0 | ||
| TPC8067-H | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSM6L39TUAnlielectronics Тип | Toshiba America Electronic Components |
TRANSISTOR 1600 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, UF6, 2-2T1B, 6 PIN, FET General Purpose Small Signal
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | gold-plated | - | 36 | - | - | - | socket | 1x36 | 2.54mm | - | - | THT | 2.7 g | TOSHIBA CORP | female | - | - | - | UF6, 2-2T1B, 6 PIN | - | - | Active | - | Yes | - | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | - | - | - | unknown | 1.5A | - | 6 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 60V | - | - | beryllium copper | - | 0.75µm | UL94V-0 | ||
| SSM6L39TU | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипTPCC8105Anlielectronics Тип | Toshiba America Electronic Components |
Description: TRANSISTOR 23000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, THIN, 2-3X1A, 8 PIN, FET General Purpose Small Signal
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | gold-plated | YES | 18 | 8 | SILICON | 1 | socket | 1x18 | 2.54mm | - | 23 A | THT | 1.35 g | TOSHIBA CORP | female | - | - | PLASTIC/EPOXY | THIN, 2-3X1A, 8 PIN | SQUARE | SMALL OUTLINE | Active | - | - | - | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | DUAL | FLAT | - | unknown | 1.5A | - | 8 | S-PDSO-F8 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | 0.0104 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | - | beryllium copper | - | 0.75µm | UL94V-0 | ||
| TPCC8105 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипT2N7002AKAnlielectronics Тип | Toshiba America Electronic Components |
Small Signal MOS FET (Single)
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 20 Weeks | gold-plated | YES | 13 | 3 | SILICON | 1 | socket | 1x13 | 2.54mm | - | 0.2 A | THT | 0.98 g | TOSHIBA CORP | female | - | 150 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | DUAL | GULL WING | 260 | unknown | 1.5A | 30 | - | R-PDSO-G3 | - | SINGLE WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 4.7 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 1 W | 60V | 0.7 pF | - | beryllium copper | - | 0.75µm | UL94V-0 | ||
| T2N7002AK |
Индекс :
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