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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Contact plating | Surface Mount | Number of pins | Number of Terminals | Transistor Element Material | Exterior Housing Material | Connector | Connector pinout layout | Contacts pitch | Drain Current-Max (ID) | Electrical mounting | Gross weight | Ihs Manufacturer | Kind of connector | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Spatial orientation | Type of connector | Operating temperature | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current rating | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | DS Breakdown Voltage-Min | FET Technology | Rated voltage | Highest Frequency Band | Profile | Power Dissipation Ambient-Max | Saturation Current | Power Gain-Min (Gp) | Plating thickness | Flammability rating |
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  | Mfr. ТипFPD3000Anlielectronics Тип | RF Micro Devices Inc |
Description: RF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, DIE
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | SILICON | - | - | - | - | - | - | - | RF MICRO DEVICES INC | - | - | 1 | 175 °C | UNSPECIFIED | UNCASED CHIP, R-XUUC-N | RECTANGULAR | UNCASED CHIP | Transferred | DIE | - | - | - | - | - | - | EAR99 | - | - | 8541.29.00.40 | UPPER | NO LEAD | - | unknown | - | - | - | R-XUUC-N | Not Qualified | - | DEPLETION MODE | - | AMPLIFIER | N-CHANNEL | 10 V | HIGH ELECTRON MOBILITY | - | X BAND | - | 7.3 W | - | - | - | - | ||
| FPD3000 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFPD1500SOT89Anlielectronics Тип | RF Micro Devices Inc |
RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 3 | SILICON | - | - | - | - | 0.55 A | - | - | RF MICRO DEVICES INC | - | 2 | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Transferred | SOT-89 | No | - | - | - | - | No | EAR99 | - | - | 8541.29.00.95 | SINGLE | FLAT | - | compliant | - | - | 3 | R-PSSO-F3 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | 8 V | HIGH ELECTRON MOBILITY | - | - | - | 2.3 W | - | - | - | - | ||
| FPD1500SOT89 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSLD3091FZAnlielectronics Тип | RF Micro Devices Inc |
Description: Power Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, CERAMIC, LDMOS-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 2 | SILICON | - | - | - | - | - | - | - | RF MICRO DEVICES INC | - | - | 1 | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | Yes | - | - | - | e3 | - | 5A991.G | Matte Tin (Sn) | - | 8541.29.00.95 | DUAL | FLAT | - | unknown | - | - | 3 | R-CDFM-F2 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | ||
| SLD3091FZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFPD7612Anlielectronics Тип | RF Micro Devices Inc |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | GALLIUM ARSENIDE | - | - | - | - | - | - | - | RF MICRO DEVICES INC | - | - | 1 | 175 °C | UNSPECIFIED | DIE | RECTANGULAR | UNCASED CHIP | Transferred | DIE | - | - | - | - | - | - | EAR99 | - | - | 8541.21.00.40 | UPPER | NO LEAD | - | unknown | - | - | - | R-XUUC-N | Not Qualified | SINGLE | DEPLETION MODE | - | AMPLIFIER | N-CHANNEL | 8 V | HIGH ELECTRON MOBILITY | - | KU BAND | - | 0.5 W | - | - | - | - | ||
| FPD7612 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSP2030Anlielectronics Тип | RF Micro Devices Inc |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | RF MICRO DEVICES INC | - | - | 1 | 200 °C | - | , | - | - | Transferred | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | N-CHANNEL | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | ||
| SP2030 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFPD200P70Anlielectronics Тип | RF Micro Devices Inc |
Description: RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 4 | GALLIUM ARSENIDE | 1 | - | - | - | - | - | - | RF MICRO DEVICES INC | - | - | - | 175 °C | CERAMIC, METAL-SEALED COFIRED | DISK BUTTON, O-CRDB-F4 | ROUND | DISK BUTTON | Obsolete | - | Yes | - | - | - | e4 | Yes | EAR99 | GOLD | - | 8541.21.00.95 | RADIAL | FLAT | - | compliant | - | - | 4 | O-CRDB-F4 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | 8 V | HIGH ELECTRON MOBILITY | - | K BAND | - | 0.47 W | 1 | 9 dB | - | - | ||
| FPD200P70 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFPD2250SOT89CESRAnlielectronics Тип | RF Micro Devices Inc |
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 3 | GALLIUM ARSENIDE | - | - | - | - | - | - | - | RF MICRO DEVICES INC | - | 1 | 1 | 175 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | No | - | - | - | - | No | EAR99 | - | - | 8541.29.00.75 | SINGLE | FLAT | - | compliant | - | - | 3 | R-PSSO-F3 | - | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | 8 V | HIGH ELECTRON MOBILITY | - | S BAND | - | 2.5 W | - | - | - | - | ||
| FPD2250SOT89CESR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFPD2250SOT89Anlielectronics Тип | RF Micro Devices Inc |
Description: RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 3 | SILICON | - | - | - | - | - | - | - | RF MICRO DEVICES INC | - | 2 | 1 | 175 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Transferred | SOT-89 | No | - | - | - | - | No | EAR99 | - | - | 8541.29.00.95 | SINGLE | FLAT | - | compliant | - | - | 3 | R-PSSO-F3 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | 8 V | HIGH ELECTRON MOBILITY | - | - | - | 2.5 W | - | - | - | - | ||
| FPD2250SOT89 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSLD-1026ZAnlielectronics Тип | RF Micro Devices Inc |
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOF-26, 6 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 6 | SILICON | - | - | - | - | - | - | - | SIRENZA MICRODEVICES INC | - | - | 1 | - | PLASTIC/EPOXY | FLATPACK, R-PDFP-F6 | RECTANGULAR | FLATPACK | Transferred | - | - | - | - | - | e3 | - | EAR99 | MATTE TIN | - | - | DUAL | FLAT | - | unknown | - | - | 6 | R-PDFP-F6 | Not Qualified | SINGLE | ENHANCEMENT MODE | - | AMPLIFIER | N-CHANNEL | - | METAL-OXIDE SEMICONDUCTOR | - | S BAND | - | - | - | - | - | - | ||
| SLD-1026Z | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFPD750SOT343EAnlielectronics Тип | RF Micro Devices Inc |
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC PACKAGE-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 4 | GALLIUM ARSENIDE | - | - | - | - | - | - | - | RF MICRO DEVICES INC | - | - | 1 | 175 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G4 | RECTANGULAR | SMALL OUTLINE | Transferred | - | Yes | - | - | - | - | - | EAR99 | - | - | 8541.29.00.75 | DUAL | GULL WING | - | compliant | - | - | 4 | R-PDSO-G4 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | 6 V | HIGH ELECTRON MOBILITY | - | S BAND | - | 1.1 W | - | - | - | - | ||
| FPD750SOT343E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSHF-1000Anlielectronics Тип | RF Micro Devices Inc |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC PACKAGE-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | gold-plated | YES | 21 | 6 | GALLIUM ARSENIDE | 1 | socket | 1x21 | 2.54mm | - | THT | 2 g | SIRENZA MICRODEVICES INC | female | - | - | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PDFM-F6 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | - | DUAL | FLAT | - | unknown | 1.5A | - | 6 | R-PDFM-F6 | Not Qualified | SINGLE | DEPLETION MODE | - | - | N-CHANNEL | 10 V | HETERO-JUNCTION | 60V | X BAND | beryllium copper | - | - | - | 0.75µm | UL94V-0 | ||
| SHF-1000 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRF7846TR13Anlielectronics Тип | RF Micro Devices Inc |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| RF7846TR13 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFPD1050Anlielectronics Тип | RF Micro Devices Inc |
RF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, DIE
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | SILICON | - | - | - | - | - | - | - | RF MICRO DEVICES INC | - | - | 1 | 175 °C | UNSPECIFIED | UNCASED CHIP, R-XUUC-N | RECTANGULAR | UNCASED CHIP | Transferred | DIE | - | - | - | - | - | - | EAR99 | - | - | 8541.29.00.40 | UPPER | NO LEAD | - | unknown | - | - | - | R-XUUC-N | Not Qualified | SINGLE | DEPLETION MODE | - | AMPLIFIER | N-CHANNEL | 10 V | HIGH ELECTRON MOBILITY | - | X BAND | - | 3.4 W | - | - | - | - | ||
| FPD1050 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSPF-2086Anlielectronics Тип | RF Micro Devices Inc |
Description: RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 4 | GALLIUM ARSENIDE | - | - | - | - | - | - | - | SIRENZA MICRODEVICES INC | - | - | 1 | 175 °C | PLASTIC/EPOXY | DISK BUTTON, O-PRDB-G4 | ROUND | DISK BUTTON | Obsolete | - | No | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | LOW NOISE | 8541.21.00.75 | RADIAL | GULL WING | - | unknown | - | - | - | O-PRDB-G4 | Not Qualified | SINGLE | DEPLETION MODE | - | AMPLIFIER | N-CHANNEL | 10 V | HIGH ELECTRON MOBILITY | - | X BAND | - | 0.4 W | - | - | - | - | ||
| SPF-2086 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFPD3000SOT89Anlielectronics Тип | RF Micro Devices Inc |
RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 3 | SILICON | - | - | - | - | - | - | - | RF MICRO DEVICES INC | - | - | 1 | 175 °C | PLASTIC/EPOXY | SOT-89, 3 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | SOT-89 | No | - | - | - | - | - | EAR99 | - | - | 8541.29.00.95 | SINGLE | FLAT | - | unknown | - | - | 3 | R-PSSO-F3 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | 8 V | HIGH ELECTRON MOBILITY | - | - | - | 3.5 W | - | - | - | - | ||
| FPD3000SOT89 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSPF-2000Anlielectronics Тип | RF Micro Devices Inc |
Description: RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 6 | GALLIUM ARSENIDE | - | - | - | - | - | - | - | SIRENZA MICRODEVICES INC | - | - | - | - | UNSPECIFIED | UNCASED CHIP, R-XUUC-N6 | RECTANGULAR | UNCASED CHIP | Transferred | DIE | No | - | - | - | - | No | EAR99 | - | - | - | UPPER | NO LEAD | NOT SPECIFIED | unknown | - | NOT SPECIFIED | 6 | R-XUUC-N6 | Not Qualified | - | DEPLETION MODE | - | AMPLIFIER | N-CHANNEL | 5.5 V | HIGH ELECTRON MOBILITY | - | X BAND | - | - | - | - | - | - | ||
| SPF-2000 |
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