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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Exterior Housing Material | Drain Current-Max (ID) | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Transition Frequency-Nom (fT) | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | JESD-609 Code | ECCN Code | Terminal Finish | HTS Code | Terminal Position | Terminal Form | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Feedback Cap-Max (Crss) | Power Dissipation Ambient-Max |
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  | Mfr. ТипMMBTH10Anlielectronics Тип | Samsung Semiconductor |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | 1 | - | SAMSUNG SEMICONDUCTOR INC | - | 150 °C | - | - | - | - | Obsolete | - | No | 650 MHz | - | - | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | unknown | - | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | - | 0.225 W | 0.1 A | 60 | - | - | ||
| MMBTH10 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFR420AAnlielectronics Тип | Samsung Semiconductor |
Power Field-Effect Transistor, 2.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | 1 | 2.3 A | SAMSUNG SEMICONDUCTOR INC | - | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | - | EAR99 | - | - | SINGLE | GULL WING | unknown | 3 | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | - | 3 Ω | 8 A | 500 V | 206 mJ | METAL-OXIDE SEMICONDUCTOR | 41 W | - | - | - | - | ||
| IRFR420A | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSSP1N60AAnlielectronics Тип | Samsung Semiconductor |
Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | 1 A | SAMSUNG SEMICONDUCTOR INC | - | 150 °C | PLASTIC/EPOXY | TO-220, 3 PIN | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | - | - | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | N-CHANNEL | TO-220AB | 12 Ω | 3 A | 600 V | 44 mJ | METAL-OXIDE SEMICONDUCTOR | 34 W | - | - | - | - | ||
| SSP1N60A | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSSD2102Anlielectronics Тип | Samsung Semiconductor |
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 8 | SILICON | - | 5.3 A | SAMSUNG SEMICONDUCTOR INC | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G8 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOT | - | - | - | - | - | EAR99 | - | - | DUAL | GULL WING | unknown | 8 | R-PDSO-G8 | Not Qualified | SINGLE | ENHANCEMENT MODE | - | - | P-CHANNEL | - | 0.06 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | - | - | - | ||
| SSD2102 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSU1N60Anlielectronics Тип | Samsung Semiconductor |
Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | 1 A | SAMSUNG SEMICONDUCTOR INC | 1 | 150 °C | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Obsolete | - | - | - | 90 ns | 35 ns | - | EAR99 | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSIP-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 12 Ω | 3 A | 600 V | - | METAL-OXIDE SEMICONDUCTOR | 40 W | - | - | 20 pF | 40 W | ||
| SSU1N60 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSSH8N60Anlielectronics Тип | Samsung Semiconductor |
Power Field-Effect Transistor, 8A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | 8 A | SAMSUNG SEMICONDUCTOR INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-3P | - | - | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | 1 Ω | - | 600 V | - | METAL-OXIDE SEMICONDUCTOR | 170 W | - | - | - | - | ||
| SSH8N60 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSH7N90Anlielectronics Тип | Samsung Semiconductor |
Power Field-Effect Transistor, 7A I(D), 900V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | 7 A | SAMSUNG SEMICONDUCTOR INC | 1 | 150 °C | PLASTIC/EPOXY | TO-3P, 3 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-3P | - | - | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | 1.8 Ω | - | 900 V | - | METAL-OXIDE SEMICONDUCTOR | 190 W | - | - | - | - | ||
| SSH7N90 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI-B9V142570EUAnlielectronics Тип | Samsung Electronics Co. Ltd |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SI-B9V142570EU | ||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSFW9644Anlielectronics Тип | Samsung Semiconductor |
Power Field-Effect Transistor, 8.6A I(D), 250V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | - | 8.6 A | SAMSUNG SEMICONDUCTOR INC | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | - | - | - | EAR99 | - | - | SINGLE | GULL WING | unknown | 3 | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | P-CHANNEL | - | 0.8 Ω | 34 A | 250 V | 462 mJ | METAL-OXIDE SEMICONDUCTOR | 123 W | - | - | - | - | ||
| SFW9644 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF9221Anlielectronics Тип | Samsung Semiconductor |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | 3.5 A | SAMSUNG SEMICONDUCTOR INC | 1 | 150 °C | - | , | - | - | Obsolete | - | - | - | - | - | - | EAR99 | - | - | - | - | unknown | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | P-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 40 W | - | - | - | - | ||
| IRF9221 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFW820TMAnlielectronics Тип | Samsung Semiconductor |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRFW820TM | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSFS9530Anlielectronics Тип | Samsung Semiconductor |
Power Field-Effect Transistor, 8A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | 8 A | SAMSUNG SEMICONDUCTOR INC | 1 | 175 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | - | - | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | P-CHANNEL | TO-220AB | 0.3 Ω | 32 A | 100 V | 213 mJ | METAL-OXIDE SEMICONDUCTOR | 39 W | - | - | - | - | ||
| SFS9530 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSH6N55Anlielectronics Тип | Samsung Semiconductor |
Power Field-Effect Transistor, 6A I(D), 550V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | 6 A | SAMSUNG SEMICONDUCTOR INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-3P | - | - | 320 ns | 210 ns | - | EAR99 | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 1.8 Ω | 24 A | 550 V | 570 mJ | METAL-OXIDE SEMICONDUCTOR | 125 W | - | - | 150 pF | 125 W | ||
| SSH6N55 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSD2106Anlielectronics Тип | Samsung Semiconductor |
Power Field-Effect Transistor, 2.5A I(D), 20V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 8 | SILICON | - | 2.5 A | SAMSUNG SEMICONDUCTOR INC | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G8 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOT | - | - | - | - | - | EAR99 | - | - | DUAL | GULL WING | unknown | 8 | R-PDSO-G8 | Not Qualified | SINGLE | ENHANCEMENT MODE | - | - | P-CHANNEL | - | 0.25 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | - | - | - | ||
| SSD2106 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF9222Anlielectronics Тип | Samsung Semiconductor |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | 3 A | SAMSUNG SEMICONDUCTOR INC | 1 | 150 °C | - | , | - | - | Obsolete | - | - | - | - | - | - | EAR99 | - | - | - | - | unknown | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | P-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 40 W | - | - | - | - | ||
| IRF9222 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSH9N90AAnlielectronics Тип | Samsung Semiconductor |
Power Field-Effect Transistor, 9A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | 9 A | SAMSUNG SEMICONDUCTOR INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-3P | - | - | 435 ns | 190 ns | - | EAR99 | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | 1.4 Ω | 36 A | 900 V | 772 mJ | METAL-OXIDE SEMICONDUCTOR | 280 W | - | - | 125 pF | 280 W | ||
| SSH9N90A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSH4N90ASAnlielectronics Тип | Samsung Semiconductor |
Description: Power Field-Effect Transistor, 4.5A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | 4.5 A | SAMSUNG SEMICONDUCTOR INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-3P | - | - | 215 ns | 120 ns | - | EAR99 | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | 3.7 Ω | 18 A | 900 V | 536 mJ | METAL-OXIDE SEMICONDUCTOR | 140 W | - | - | 40 pF | 140 W | ||
| SSH4N90AS | ||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSH5N80AAnlielectronics Тип | Samsung Semiconductor |
Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | 5 A | SAMSUNG SEMICONDUCTOR INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-3P | - | - | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | 2.2 Ω | 20 A | 800 V | 333 mJ | METAL-OXIDE SEMICONDUCTOR | 160 W | - | - | - | - | ||
| SSH5N80A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSFR9110Anlielectronics Тип | Samsung Semiconductor |
Description: Power Field-Effect Transistor, 2.8A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | - | 2.8 A | SAMSUNG SEMICONDUCTOR INC | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | - | EAR99 | - | - | SINGLE | GULL WING | unknown | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | 1.2 Ω | 11 A | 100 V | 31 mJ | METAL-OXIDE SEMICONDUCTOR | 20 W | - | - | - | - | ||
| SFR9110 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFS9520Anlielectronics Тип | Samsung Semiconductor |
Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | 6 A | SAMSUNG SEMICONDUCTOR INC | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220F | - | - | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE | ENHANCEMENT MODE | ISOLATED | - | P-CHANNEL | TO-220AB | 0.6 Ω | - | 100 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | ||
| IRFS9520 |
Индекс :
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