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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Surface Mount | Number of Terminals | Transistor Element Material | Exterior Housing Material | Drain Current-Max (ID) | Ihs Manufacturer | Manufacturer Package Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Transition Frequency-Nom (fT) | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Feedback Cap-Max (Crss) | Highest Frequency Band | Power Dissipation Ambient-Max | Saturation Current | Power Gain-Min (Gp) |
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  | Mfr. ТипIRLR024NTRPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 2 | SILICON | 1 | 17 A | INTERNATIONAL RECTIFIER CORP | - | 175 °C | - | PLASTIC/EPOXY | LEAD FREE, DPAK-3 | RECTANGULAR | SMALL OUTLINE | Transferred | TO-252AA | Yes | - | - | - | e3 | Yes | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 8541.29.00.95 | SINGLE | GULL WING | 260 | not_compliant | 30 | 3 | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-252AA | 0.08 Ω | 72 A | 55 V | 68 mJ | METAL-OXIDE SEMICONDUCTOR | 45 W | - | - | - | - | - | 1 | - | ||
| IRLR024NTRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFZ24NAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 3 | SILICON | 1 | 17 A | INTERNATIONAL RECTIFIER CORP | - | 175 °C | - | PLASTIC/EPOXY | TO-220AB, 3 PIN | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | No | - | - | - | e0 | No | EAR99 | TIN LEAD | AVALANCHE RATED | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | compliant | - | 3 | R-PSFM-T3 | Not Qualified | SINGLE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 0.07 Ω | 68 A | 55 V | 71 mJ | METAL-OXIDE SEMICONDUCTOR | 45 W | - | - | - | - | 45 W | - | - | ||
| IRFZ24N | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMMBTH10Anlielectronics Тип | Motorola Semiconductor Products |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 1 | - | MOTOROLA INC | - | 150 °C | - | - | - | - | - | Obsolete | - | No | 650 MHz | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | - | 0.225 W | 0.1 A | 60 | - | - | - | - | - | ||
| MMBTH10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFR4105ZAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 2 | SILICON | 1 | 30 A | INTERNATIONAL RECTIFIER CORP | - | 175 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Transferred | TO-252AA | No | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | - | SINGLE | GULL WING | 240 | compliant | 30 | 3 | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-252AA | 0.0245 Ω | 120 A | 55 V | 29 mJ | METAL-OXIDE SEMICONDUCTOR | 48 W | - | - | - | - | - | 1 | - | ||
| IRFR4105Z | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFR3708Anlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 30A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 2 | SILICON | 1 | 30 A | INTERNATIONAL RECTIFIER CORP | - | 175 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Transferred | TO-252AA | No | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | SINGLE | GULL WING | 240 | compliant | 30 | 3 | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-252AA | 0.0125 Ω | 244 A | 30 V | 213 mJ | METAL-OXIDE SEMICONDUCTOR | 61 W | - | - | - | - | - | 1 | - | ||
| IRFR3708 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFZ48Anlielectronics Тип | National Semiconductor Corporation |
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 3 | SILICON | 1 | 50 A | NATIONAL SEMICONDUCTOR CORP | - | - | - | PLASTIC/EPOXY | TO-220, 3 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | - | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | TO-220AB | 0.018 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | 150 W | - | - | ||
| IRFZ48 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMMBTH10Anlielectronics Тип | Samsung Semiconductor |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 1 | - | SAMSUNG SEMICONDUCTOR INC | - | 150 °C | - | - | - | - | - | Obsolete | - | No | 650 MHz | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | - | 0.225 W | 0.1 A | 60 | - | - | - | - | - | ||
| MMBTH10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMMBTH10Anlielectronics Тип | WEITRON INTERNATIONAL CO., LTD. |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | WEITRON TECHNOLOGY CO LTD | - | - | - | - | SOT-23, 3 PIN | - | - | Contact Manufacturer | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MMBTH10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAP9578GHAnlielectronics Тип | Advanced Power Electronics Corp |
Description: TRANSISTOR 10 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 2 | SILICON | 1 | 10 A | ADVANCED POWER ELECTRONICS CORP | - | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | TO-252 | - | - | - | - | - | - | EAR99 | - | - | - | SINGLE | GULL WING | - | compliant | - | 4 | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | TO-252 | 0.16 Ω | 45 A | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | ||
| AP9578GH | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMMBTH10Anlielectronics Тип | Secos Corporation |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | SECOS CORP | - | - | - | - | SOT-23, 3 PIN | - | - | Contact Manufacturer | - | Yes | - | - | - | - | - | EAR99 | - | - | 8541.21.00.75 | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MMBTH10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMRF141GAnlielectronics Тип | Motorola Mobility LLC |
Description: 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 4 | SILICON | 2 | 32 A | MOTOROLA INC | CASE 375-04 | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | - | - | 8541.29.00.75 | DUAL | FLAT | - | unknown | - | 4 | R-CDFM-F4 | Not Qualified | COMMON SOURCE, 2 ELEMENTS | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | 0.15 Ω | - | 65 V | - | METAL-OXIDE SEMICONDUCTOR | 500 W | - | - | - | VERY HIGH FREQUENCY BAND | 500 W | - | 12 dB | ||
| MRF141G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMRF141GAnlielectronics Тип | TE Connectivity |
2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 4 | SILICON | 2 | 32 A | TE CONNECTIVITY LTD | CASE 375-04 | - | - | CERAMIC, METAL-SEALED COFIRED | - | RECTANGULAR | FLANGE MOUNT | Transferred | - | Yes | - | - | - | - | - | EAR99 | - | - | - | DUAL | FLAT | NOT SPECIFIED | unknown | NOT SPECIFIED | 4 | R-CDFM-F4 | Not Qualified | COMMON SOURCE, 2 ELEMENTS | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | 65 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | VERY HIGH FREQUENCY BAND | - | - | - | ||
| MRF141G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSIZF914DT-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 20 Weeks | YES | 8 | SILICON | 2 | 40 A | VISHAY INTERTECHNOLOGY INC | - | 150 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | 50 ns | 140 ns | - | - | EAR99 | - | - | - | DUAL | NO LEAD | NOT SPECIFIED | compliant | NOT SPECIFIED | - | R-PDSO-N8 | - | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | SOURCE | SWITCHING | N-CHANNEL | - | 0.0038 Ω | 130 A | 25 V | 20 mJ | METAL-OXIDE SEMICONDUCTOR | 26.6 W | - | - | 47 pF | - | - | - | - | ||
| SIZF914DT-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFP31QF-FAnlielectronics Тип | WJ Communications Inc |
Description: RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET, MO-220VJJC, 6 X 6 MM, ROHS COMPLIANT, PLASTIC, QFN-28
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 28 | SILICON | 1 | - | WJ COMMUNICATIONS INC | - | - | - | PLASTIC/EPOXY | 6 X 6 MM, ROHS COMPLIANT, PLASTIC, QFN-28 | SQUARE | CHIP CARRIER | Transferred | - | Yes | - | - | - | e3 | - | EAR99 | MATTE TIN | HIGH RELIABILITY | - | QUAD | NO LEAD | 260 | unknown | - | - | S-PQCC-N28 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | MO-220VJJC | - | - | - | - | HETERO-JUNCTION | - | - | - | - | S BAND | - | 2 | - | ||
| FP31QF-F | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNDS0610Anlielectronics Тип | Rochester Electronics LLC |
120mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 3 | SILICON | 1 | 0.12 A | ROCHESTER ELECTRONICS LLC | - | - | - | PLASTIC/EPOXY | SOT-23, 3 PIN | RECTANGULAR | SMALL OUTLINE | Active | SOT-23 | - | - | - | - | e3 | Yes | - | MATTE TIN | - | - | DUAL | GULL WING | 260 | unknown | 30 | 3 | R-PDSO-G3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | 10 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | 5 pF | - | - | 1 | - | ||
| NDS0610 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNDS0610Anlielectronics Тип | Texas Instruments |
120mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 3 | SILICON | 1 | 0.12 A | NATIONAL SEMICONDUCTOR CORP | - | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | No | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | DUAL | GULL WING | - | unknown | - | - | R-PDSO-G3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | TO-236AB | 10 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 0.36 W | - | - | 5 pF | - | - | - | - | ||
| NDS0610 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипARF1510Anlielectronics Тип | Advanced Power Technology |
RF Power Field-Effect Transistor, 4-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 10 | SILICON | 4 | 9 A | ADVANCED POWER TECHNOLOGY INC | - | - | - | UNSPECIFIED | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | - | - | EAR99 | - | - | - | DUAL | FLAT | - | unknown | - | - | R-XDSO-F10 | Not Qualified | BRIDGE, 4 ELEMENTS | ENHANCEMENT MODE | ISOLATED | AMPLIFIER | N-CHANNEL | - | - | - | 1000 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | VERY HIGH FREQUENCY BAND | - | - | - | ||
| ARF1510 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI4160DY-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 25.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 8 | SILICON | 1 | 25.4 A | VISHAY INTERTECHNOLOGY INC | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | e3 | - | EAR99 | Matte Tin (Sn) | - | - | DUAL | GULL WING | 260 | not_compliant | 30 | - | R-PDSO-G8 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | MS-012AA | 0.0049 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 5.7 W | - | - | - | - | - | 1 | - | ||
| SI4160DY-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипCPH6350-TL-WAnlielectronics Тип | SANYO Semiconductor Co Ltd |
Description: Power Field-Effect Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | SANYO SEMICONDUCTOR CO LTD | - | - | - | - | - | - | - | Transferred | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| CPH6350-TL-W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFMMT591Anlielectronics Тип | Secos Corporation |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | SECOS CORP | - | - | - | - | - | - | - | Contact Manufacturer | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FMMT591 |
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