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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Surface Mount | Number of Terminals | Transistor Element Material | Exterior Housing Material | Case | Date Of Intro | Drain Current-Max (ID) | Gross weight | Ihs Manufacturer | Kind of architecture | Kind of package | Memory | Mounting | Number of 12bit A/D converters | Number of 12bit D/A converters | Number of 16bit timers | Number of 32bit timers | Number of comparators | Number of inputs/outputs | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Transition Frequency-Nom (fT) | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Type of integrated circuit | Operating temperature | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Clock frequency | Family | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Feedback Cap-Max (Crss) | Power Dissipation Ambient-Max | Saturation Current |
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  | Mfr. ТипJANTX2N6851Anlielectronics Тип | Harris Semiconductor |
Description: Small Signal Field-Effect Transistor, 4A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 3 | SILICON | 1 | - | - | 4 A | - | HARRIS SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | 150 °C | -55 °C | METAL | TO-39, 3 PIN | ROUND | CYLINDRICAL | Obsolete | - | - | - | 160 ns | 150 ns | - | - | - | - | EAR99 | - | - | - | BOTTOM | WIRE | - | unknown | - | - | - | O-MBCY-W3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | P-CHANNEL | TO-205AF | 0.8 Ω | 20 A | 200 V | 500 mJ | METAL-OXIDE SEMICONDUCTOR | 25 W | - | - | 50 pF | - | - | ||
| JANTX2N6851 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBUJ103ADAnlielectronics Тип | Philips Semiconductors |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 1 | - | - | - | - | PHILIPS SEMICONDUCTORS | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | , | - | - | Transferred | - | No | - | - | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | - | - | - | - | ||
| BUJ103AD | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF8736TRPBFAnlielectronics Тип | International Rectifier |
Description: Power Field-Effect Transistor, 18A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 8 | SILICON | 1 | - | - | 18 A | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | LEAD FREE, SOP-8 | RECTANGULAR | SMALL OUTLINE | Transferred | - | Yes | - | - | - | - | - | e3 | Yes | EAR99 | MATTE TIN | - | - | DUAL | GULL WING | 260 | compliant | 30 | - | - | R-PDSO-G8 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | - | SWITCHING | N-CHANNEL | MS-012AA | 0.0048 Ω | 144 A | 30 V | 126 mJ | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | - | - | - | 1 | ||
| IRF8736TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNDS355ANAnlielectronics Тип | National Semiconductor Corporation |
Description: Small Signal Field-Effect Transistor, 0.0016A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 3 | SILICON | 1 | VFQFPN68 | - | 0.0016 A | 0.5 g | NATIONAL SEMICONDUCTOR CORP | Cortex M33 | in-tray | 640kB SRAM | SMD | 16 | 2 | 18 | 2 | - | 53 | 150 °C | - | PLASTIC/EPOXY | SUPERSOT-3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | Yes | - | - | - | STM32 ARM microcontroller | -40...85°C | e3 | - | EAR99 | MATTE TIN | LOGIC LEVEL COMPATIBLE | 8541.21.00.95 | DUAL | GULL WING | - | compliant | - | - | - | R-PDSO-G3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | 250MHz | STM32H5 | SWITCHING | N-CHANNEL | - | 0.1 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | 0.5 W | 1 | ||
| NDS355AN | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFP260MPBFAnlielectronics Тип | International Rectifier |
Description: Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 3 | SILICON | 1 | - | - | 50 A | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | LEAD FREE, PLASTIC PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-247AC | Yes | - | - | - | - | - | e3 | Yes | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | compliant | NOT SPECIFIED | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | - | SWITCHING | N-CHANNEL | TO-247AC | 0.04 Ω | 200 A | 200 V | 560 mJ | METAL-OXIDE SEMICONDUCTOR | 300 W | - | - | - | - | - | ||
| IRFP260MPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFQPF9N50CAnlielectronics Тип | Rochester Electronics LLC |
9A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 3 | SILICON | 1 | - | - | 9 A | - | ROCHESTER ELECTRONICS LLC | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | LEAD FREE, TO-220F, 3 PIN | RECTANGULAR | FLANGE MOUNT | Active | TO-220AB | Yes | - | - | - | - | - | e3 | Yes | - | MATTE TIN | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | NOT SPECIFIED | 3 | - | R-PSFM-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | - | - | SWITCHING | N-CHANNEL | TO-220AB | 0.8 Ω | 36 A | 500 V | 360 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | NOT APPLICABLE | ||
| FQPF9N50C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNDS355ANAnlielectronics Тип | Texas Instruments |
1.6mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 3 | SILICON | 1 | - | - | 0.0016 A | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | Yes | - | - | - | - | - | e3 | - | EAR99 | MATTE TIN | LOGIC LEVEL COMPATIBLE | 8541.21.00.95 | DUAL | GULL WING | - | compliant | - | - | - | R-PDSO-G3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | - | SWITCHING | N-CHANNEL | - | 0.1 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | 0.5 W | 1 | ||
| NDS355AN | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF540PBFAnlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 3 | SILICON | 1 | - | - | 28 A | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | 175 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | TO-220AB | Yes | - | - | - | - | - | e3 | Yes | EAR99 | MATTE TIN | AVALANCHE RATED | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | - | SWITCHING | N-CHANNEL | TO-220AB | 0.077 Ω | 110 A | 100 V | 230 mJ | METAL-OXIDE SEMICONDUCTOR | 150 W | - | - | 120 pF | - | 1 | ||
| IRF540PBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипUF540L-TA3-TAnlielectronics Тип | Unisonic Technologies Co Ltd |
Description: Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 3 | SILICON | 1 | - | - | 27 A | - | UNISONIC TECHNOLOGIES CO LTD | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | , | RECTANGULAR | FLANGE MOUNT | Active | - | Yes | - | - | - | - | - | - | - | EAR99 | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | compliant | NOT SPECIFIED | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | - | SWITCHING | N-CHANNEL | TO-220AB | 0.036 Ω | 108 A | 100 V | - | METAL-OXIDE SEMICONDUCTOR | 125 W | - | - | 48 pF | - | - | ||
| UF540L-TA3-T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFI530NPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 12A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 3 | SILICON | 1 | - | - | 12 A | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | LEAD FREE, PLASTIC, TO-220, FULL PACK-3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | Yes | - | - | - | - | - | e3 | Yes | EAR99 | MATTE TIN OVER NICKEL | AVALANCHE RATED | - | SINGLE | THROUGH-HOLE | - | compliant | - | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | - | - | SWITCHING | N-CHANNEL | TO-220AB | 0.11 Ω | 60 A | 100 V | 150 mJ | METAL-OXIDE SEMICONDUCTOR | 33 W | - | - | - | - | - | ||
| IRFI530NPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFH5250TRPBFAnlielectronics Тип | International Rectifier |
Description: Power Field-Effect Transistor, 45A I(D), 25V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 5 | SILICON | 1 | - | - | 45 A | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | RECTANGULAR | SMALL OUTLINE | Transferred | QFN | Yes | - | - | - | - | - | e3 | Yes | EAR99 | MATTE TIN | HIGH RELIABILITY | - | DUAL | NO LEAD | 260 | compliant | 30 | 8 | - | R-PDSO-N5 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | N-CHANNEL | - | 0.00175 Ω | 400 A | 25 V | 468 mJ | METAL-OXIDE SEMICONDUCTOR | 250 W | - | - | - | - | 1 | ||
| IRFH5250TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRLR3715ZCTRPBFAnlielectronics Тип | International Rectifier |
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 1 | UFBGA169 | - | 49 A | 0.5 g | INTERNATIONAL RECTIFIER CORP | Cortex M7 | - | 64kB FLASH | SMD | 16 | - | - | - | - | 116 | 175 °C | - | - | , | - | - | Obsolete | - | Yes | - | - | - | STM32 ARM microcontroller | -40...85°C | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | ENHANCEMENT MODE | - | 600MHz | STM32H7 | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 40 W | - | - | - | - | - | ||
| IRLR3715ZCTRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSQJ418EP-T1_GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 25 Weeks | YES | 4 | SILICON | 1 | - | 2016-07-19 | 48 A | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | 175 °C | -55 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G4 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | - | EAR99 | - | - | - | SINGLE | GULL WING | NOT SPECIFIED | unknown | NOT SPECIFIED | - | AEC-Q101 | R-PSSO-G4 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | - | - | N-CHANNEL | - | 0.014 Ω | 160 A | 100 V | 65 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| SQJ418EP-T1_GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF530NSTRLPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 2 | SILICON | 1 | - | - | 17 A | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | LEAD FREE, PLASTIC, D2PAK-3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | Yes | - | - | - | - | - | e3 | Yes | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY | - | SINGLE | GULL WING | 260 | not_compliant | 30 | 3 | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | N-CHANNEL | - | 0.09 Ω | 60 A | 100 V | 93 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | 1 | ||
| IRF530NSTRLPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBCX70GAnlielectronics Тип | Allegro MicroSystems LLC |
Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 1 | - | 1983-08-26 | - | - | ALLEGRO MICROSYSTEMS LLC | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | Obsolete | - | No | 100 MHz | - | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | - | - | NPN | - | - | - | - | - | - | 0.25 W | 0.2 A | 120 | - | - | - | ||
| BCX70G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFU3910PBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 3 | SILICON | 1 | - | - | 16 A | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | LEAD FREE, PLASTIC, IPAK-3 | RECTANGULAR | IN-LINE | Transferred | TO-251AA | Yes | - | - | - | - | - | e3 | Yes | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED | - | SINGLE | THROUGH-HOLE | 260 | not_compliant | 30 | 3 | - | R-PSIP-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | N-CHANNEL | TO-251AA | 0.115 Ω | 60 A | 100 V | 150 mJ | METAL-OXIDE SEMICONDUCTOR | 52 W | - | - | - | - | 1 | ||
| IRFU3910PBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRL640Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 3 | SILICON | 1 | UFQFN32 | - | 17 A | 0.5 g | VISHAY INTERTECHNOLOGY INC | Cortex M0+ | - | 12kB SRAM | SMD | 1 | 1 | - | - | 1 | 27 | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Obsolete | - | No | - | - | - | STM32 ARM microcontroller | -40...85°C | e0 | No | EAR99 | TIN LEAD | LOGIC LEVEL COMPATIBLE | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | 56MHz | STM32U0 | SWITCHING | N-CHANNEL | TO-220AB | 0.18 Ω | 68 A | 200 V | 580 mJ | METAL-OXIDE SEMICONDUCTOR | 125 W | - | - | - | - | - | ||
| IRL640 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBCX70GAnlielectronics Тип | Motorola Semiconductor Products |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 1 | - | - | - | - | MOTOROLA INC | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | Obsolete | - | No | 100 MHz | - | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | - | - | NPN | - | - | - | - | - | - | 0.25 W | 0.2 A | 120 | - | - | - | ||
| BCX70G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSIR626DP-T1-RE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks, 3 Days | YES | 5 | SILICON | 1 | - | 2017-03-22 | 100 A | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | 78 ns | 88 ns | - | - | - | - | EAR99 | - | - | - | DUAL | FLAT | NOT SPECIFIED | unknown | NOT SPECIFIED | - | - | R-PDSO-F5 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | N-CHANNEL | - | 0.002 Ω | 200 A | 60 V | 125 mJ | METAL-OXIDE SEMICONDUCTOR | 104 W | - | - | - | - | - | ||
| SIR626DP-T1-RE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBCX70GAnlielectronics Тип | Philips Semiconductors |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 1 | UFBGA100 | - | - | 0.5 g | PHILIPS SEMICONDUCTORS | Cortex M33 | - | 272kB RAM | SMD | 2 | 1 | - | - | - | 80 | 150 °C | - | - | - | - | - | Transferred | - | Yes | 100 MHz | - | - | STM32 ARM microcontroller | -40...85°C | e3 | - | EAR99 | MATTE TIN | - | - | - | - | 260 | unknown | - | - | - | - | - | SINGLE | - | - | 250MHz | STM32H5 | - | NPN | - | - | - | - | - | - | 0.25 W | 0.2 A | 120 | - | - | - | ||
| BCX70G |
Индекс :
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