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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Surface Mount | Number of Terminals | Transistor Element Material | Exterior Housing Material | Capacitors series | Case - inch | Case - mm | Color key/housing | Date Of Intro | Dielectric strength | Drain Current-Max (ID) | Gross weight | Ihs Manufacturer | Key shape | Kind of capacitor | Maximum current | Mounting | Mounting hole size | Number of contacts in group/number of groups (total contacts) | Number of switching cycles (electrical) | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Shipping package size/quantity | Switching Scheme | Transition Frequency-Nom (fT) | Transport packaging size/quantity | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Type of capacitor | Operating temperature | Tolerance | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Capacitance | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Dielectric | Contact resistance | Configuration | Insulation resistance | Operating Mode | Case Connection | Switch Type | Transistor Application | Polarity/Channel Type | Operating temperature range | Rated current | Switching voltage | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Feedback Cap-Max (Crss) | Power Dissipation Ambient-Max | Saturation Current | Operating voltage | Height | Width |
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  | Mfr. ТипSI4618DY-T1-E3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 6.7A I(D), 30V, 0.017ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 8 | SILICON | 2 | - | - | - | - | - | - | 6.7 A | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | ROHS COMPLIANT, SOP-8 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | Yes | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | Matte Tin (Sn) | - | - | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | - | R-PDSO-G8 | Not Qualified | - | - | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | - | - | 0.017 Ω | 35 A | 30 V | 11.2 mJ | METAL-OXIDE SEMICONDUCTOR | 4.16 W | - | - | - | - | 1 | - | - | - | ||
| SI4618DY-T1-E3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSUD08P06-155L-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 8.2A I(D), 60V, 0.155ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | YES | 2 | SILICON | 1 | - | - | - | - | - | - | 8.2 A | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Active | TO-252 | Yes | - | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | Matte Tin (Sn) - annealed | - | - | - | SINGLE | GULL WING | 260 | - | not_compliant | 30 | 4 | - | R-PSSO-G2 | - | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | - | - | P-CHANNEL | - | - | - | TO-252 | 0.155 Ω | 18 A | 60 V | 7.2 mJ | METAL-OXIDE SEMICONDUCTOR | 20.8 W | - | - | - | - | 1 | - | - | - | ||
| SUD08P06-155L-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBC109CAnlielectronics Тип | North American Philips Discrete Products Div |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | 1 | - | - | - | - | - | - | - | - | NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV | - | - | - | - | - | - | - | 175 °C | - | - | - | - | - | Transferred | - | No | - | - | 150 MHz | - | - | - | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | - | 0.6 W | 0.2 A | 420 | - | - | - | - | - | - | ||
| BC109C North American Philips Discrete Products Div
RoHS :
Инкапсуляция :
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Есть складские запасы :
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1 :
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| | Mfr. ТипBC109CAnlielectronics Тип | Bharat Electronics Ltd |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | 1 | KGM | 1812 | 4532 | - | - | - | - | 0.055 g | BHARAT ELECTRONICS LTD | - | MLCC | - | SMD | - | - | - | 175 °C | - | - | - | - | - | Contact Manufacturer | - | - | - | - | 150 MHz | - | - | - | ceramic | -55...85°C | ±10% | - | - | EAR99 | - | - | - | 10µF | - | - | - | - | unknown | - | - | - | - | - | X5R | - | SINGLE | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | - | 0.6 W | 0.2 A | 420 | - | - | - | 25V | - | - | ||
| BC109C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI7456DDP-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 27.8A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks, 4 Days | YES | 5 | SILICON | 1 | - | - | - | - | - | - | 27.8 A | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | MATTE TIN | - | - | - | DUAL | C BEND | 260 | - | not_compliant | 30 | - | - | R-PDSO-C5 | - | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | N-CHANNEL | - | - | - | - | 0.023 Ω | 70 A | 100 V | 11.2 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | 1 | - | - | - | ||
| SI7456DDP-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBC108Anlielectronics Тип | Bharat Electronics Ltd |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | 1 | - | - | - | - | - | - | - | 4.87 | BHARAT ELECTRONICS LTD | - | - | - | - | - | - | - | 175 °C | - | - | , | - | - | Contact Manufacturer | - | - | - | - | 150 MHz | 62*27.5*17/595 | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | - | 0.6 W | 0.2 A | 110 | - | - | - | - | - | - | ||
| BC108 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPXT2222AAnlielectronics Тип | Philips Semiconductors |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 1 | - | - | - | - | - | - | - | - | PHILIPS SEMICONDUCTORS | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | Transferred | - | No | - | - | 300 MHz | - | - | - | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | - | 1 W | 0.6 A | 40 | - | - | - | - | - | - | ||
| PXT2222A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBCW60CAnlielectronics Тип | Motorola Semiconductor Products |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 1 | - | - | - | - | - | - | - | - | MOTOROLA INC | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | Obsolete | - | No | - | - | 125 MHz | - | - | - | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | - | 0.3 W | 0.1 A | 250 | - | - | - | - | - | - | ||
| BCW60C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF530NSAnlielectronics Тип | New Jersey Semiconductor Products Inc |
Trans MOSFET N-CH 100V 17A 3-Pin(2 Tab) D2PAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | SILICON | 1 | - | - | - | - | - | - | 17 A | - | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | - | - | - | - | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | SINGLE | - | ENHANCEMENT MODE | - | - | - | N-CHANNEL | - | - | - | - | - | - | 100 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | ||
| IRF530NS | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI4490DY-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 2.85A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | YES | 8 | SILICON | 1 | KGM | 1210 | 3225 | - | - | - | 2.85 A | 0.028 g | VISHAY INTERTECHNOLOGY INC | - | MLCC | - | SMD | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | ceramic | -55...125°C | ±10% | e3 | - | EAR99 | Matte Tin (Sn) - annealed | - | - | 10µF | DUAL | GULL WING | 260 | - | compliant | 30 | - | - | R-PDSO-G8 | Not Qualified | X7R | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | - | N-CHANNEL | - | - | - | - | 0.09 Ω | - | 200 V | - | METAL-OXIDE SEMICONDUCTOR | 3.1 W | - | - | - | - | 1 | 25V | - | - | ||
| SI4490DY-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPMV55ENEAAnlielectronics Тип | Nexperia |
Description: Small Signal Field-Effect Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 3 | SILICON | 1 | - | - | - | - | 2017-02-17 | - | 3.1 A | - | NEXPERIA | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | TIN | - | - | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | AEC-Q101; IEC-60134 | R-PDSO-G3 | - | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | - | TO-236AB | 0.06 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | 1 | - | - | - | ||
| PMV55ENEA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSQJ431AEP-T1_GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.315ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 20 Weeks | YES | 4 | SILICON | 1 | KGM | 1210 | 3225 | - | - | - | 9.4 A | 0.028 g | VISHAY INTERTECHNOLOGY INC | - | MLCC | - | SMD | - | - | - | - | -55 °C | PLASTIC/EPOXY | SO-8L, 4 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | ceramic | -30...85°C | -20...80% | - | - | EAR99 | Pure Matte Tin (Sn) - annealed | - | - | 10µF | SINGLE | GULL WING | NOT SPECIFIED | - | unknown | NOT SPECIFIED | - | AEC-Q101 | R-PSSO-G4 | - | Y5V | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | - | - | P-CHANNEL | - | - | - | - | 0.315 Ω | 37 A | 200 V | 45 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | 1 | 10V | - | - | ||
| SQJ431AEP-T1_GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSQJ946EP-T1_GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 15A I(D), 40V, 0.033ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 20 Weeks | YES | 4 | SILICON | 2 | KGM | 1210 | 3225 | - | - | - | 15 A | 0.02 g | VISHAY INTERTECHNOLOGY INC | - | MLCC | - | SMD | - | - | - | - | -55 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G4 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | ceramic | -30...85°C | -20...80% | - | - | EAR99 | - | - | - | 1µF | SINGLE | GULL WING | NOT SPECIFIED | - | unknown | NOT SPECIFIED | - | AEC-Q101 | R-PSSO-G4 | - | Y5V | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | - | - | N-CHANNEL | - | - | - | - | 0.033 Ω | 40 A | 40 V | 6 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | 50V | - | - | ||
| SQJ946EP-T1_GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSISHA12ADN-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | YES | 8 | SILICON | 1 | - | - | - | - | 2018-12-13 | - | 25 A | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | , | SQUARE | SMALL OUTLINE | Active | - | Yes | - | - | - | - | 75 ns | 40 ns | - | - | - | - | - | EAR99 | - | - | - | - | DUAL | NO LEAD | NOT SPECIFIED | - | unknown | NOT SPECIFIED | - | - | S-PDSO-N8 | - | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | N-CHANNEL | - | - | - | - | 0.0043 Ω | 80 A | 30 V | 11 mJ | METAL-OXIDE SEMICONDUCTOR | 28 W | - | - | 51 pF | - | - | - | - | - | ||
| SISHA12ADN-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDS6670AAnlielectronics Тип | Rochester Electronics LLC |
Small Signal Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | KGM | 1210 | 3225 | - | - | - | - | 0.03 g | ROCHESTER ELECTRONICS LLC | - | MLCC | - | SMD | - | - | - | - | - | - | - | - | - | Active | SOT | Yes | - | - | - | - | - | - | ceramic | -55...125°C | ±10% | - | Yes | EAR99 | - | - | - | 1nF | - | - | - | - | unknown | - | 8 | - | - | - | C0G (NP0) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1kV | - | - | ||
| FDS6670A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMPSA29Anlielectronics Тип | Allegro MicroSystems LLC |
Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | - | - | - | - | - | - | - | - | ALLEGRO MICROSYSTEMS LLC | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | Active | - | No | - | - | 125 MHz | - | - | - | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | DARLINGTON | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | - | - | 0.5 A | 10000 | - | - | - | - | - | - | ||
| MPSA29 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMPSA29Anlielectronics Тип | Jiangsu Changjiang Electronics Technology Co Ltd |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | green, red/black | - | 1500 (50 Hz, 1 min.) V | - | 16.50 | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO LTD | C-type rectangle (concave) | - | 3 (6) A | - | 22 x 28.4 mm | 3 / 2 (6P) | ≥10000 | - | - | - | - | - | - | Contact Manufacturer | - | - | 52*36*23/1000 | ON-OFF, DPDT | - | - | - | - | - | - | - | - | - | EAR99 | - | - | 8541.21.00.75 | - | - | - | - | 31.5 (without key) mm | unknown | - | - | - | - | - | - | ≤30 mOhm | - | ≥100 (500 V, 1 min.) MOhm MOhm | - | - | Dual-key switch of KCD4 series with backlight | - | - | -25…+85 °C | 3 A | 125 / 250 (AC) V | - | - | - | - | - | - | - | - | - | - | - | - | - | 31.3 (front plate) mm | 24.3 mm | ||
| MPSA29 Jiangsu Changjiang Electronics Technology Co Ltd
RoHS :
Инкапсуляция :
-
Есть складские запасы :
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| | Mfr. ТипNDS352APAnlielectronics Тип | National Semiconductor Corporation |
Description: Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 3 | SILICON | 1 | - | - | - | - | - | - | 0.9 A | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | No | - | - | - | - | - | - | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | LOGIC LEVEL COMPATIBLE | 8541.21.00.95 | - | DUAL | GULL WING | - | - | compliant | - | - | - | R-PDSO-G3 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | SWITCHING | P-CHANNEL | - | - | - | TO-236AB | 0.3 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 0.5 W | - | - | - | 0.46 W | - | - | - | - | ||
| NDS352AP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSUD50P08-25L-E3Anlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 12.5A I(D), 80V, 0.0252ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 2 | SILICON | 1 | - | - | - | - | - | - | 50 A | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | 175 °C | -55 °C | PLASTIC/EPOXY | ROHS COMPLIANT PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | 310 ns | 65 ns | - | - | - | e3 | - | - | Matte Tin (Sn) | - | - | - | SINGLE | GULL WING | 260 | - | compliant | 30 | - | - | R-PSSO-G2 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | - | - | P-CHANNEL | - | - | - | TO-252 | 0.0252 Ω | 40 A | 80 V | 101 mJ | METAL-OXIDE SEMICONDUCTOR | 136 W | - | - | 235 pF | - | 1 | - | - | - | ||
| SUD50P08-25L-E3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBUK9675-100AAnlielectronics Тип | Nexperia |
Power Field-Effect Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 2 | SILICON | 1 | KGM | 1206 | 3216 | - | 2017-02-01 | - | 23 A | 0.03 g | NEXPERIA | - | MLCC | - | SMD | - | - | - | - | - | PLASTIC/EPOXY | D2PAK-3 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | ceramic | -55...125°C | ±5% | e3 | - | EAR99 | TIN | - | - | 0.1nF | SINGLE | GULL WING | 245 | - | not_compliant | 30 | - | AEC-Q101 | R-PSSO-G2 | - | C0G (NP0) | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | N-CHANNEL | - | - | - | - | 0.084 Ω | 91 A | 100 V | 100 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | 1 | 500V | - | - | ||
| BUK9675-100A |
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