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  | Mfr. ТипMPSA29Anlielectronics Тип | North American Philips Discrete Products Div |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV | - | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | Obsolete | - | - | No | - | - | - | - | 125 MHz | - | - | - | - | - | - | - | - | - | - | - | - | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | DARLINGTON | - | - | - | - | NPN | - | - | - | - | - | - | - | - | - | 0.5 A | 10000 | - | - | - | - | - | - | - | ||
| MPSA29 North American Philips Discrete Products Div
RoHS :
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| | Mfr. ТипSIR668ADP-T1-RE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | YES | - | 5 | SILICON | 1 | - | - | - | - | - | - | - | - | 2018-03-26 | 93.6 A | - | - | - | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | Tin (Sn) | - | - | - | - | DUAL | FLAT | NOT SPECIFIED | - | unknown | NOT SPECIFIED | - | R-PDSO-F5 | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | DRAIN | SWITCHING | N-CHANNEL | - | - | 0.0048 Ω | - | 200 A | 100 V | 61.2 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | 1 | - | - | - | - | ||
| SIR668ADP-T1-RE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI2312BDS-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | YES | 0.8 kg | 3 | SILICON | 1 | POS40 | - | - | - | - | KGM | 1206 | 3216 | - | 3.9 A | - | - | - | - | 825.00 | - | VISHAY INTERTECHNOLOGY INC | - | - | MLCC | - | 183...240 °C | - | SMD | - | 150 °C | -55 °C | PLASTIC/EPOXY | TO-236, SOT-23, 3 PIN | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | - | Yes | - | 285...330 °C | - | - | - | - | 35*16*17/10 | - | - | - | - | ceramic | - | - | -55...125°C | coil | ±20% | e3 | - | EAR99 | Soft lead-tin solder Sn/Pb | MATTE TIN | lead - 40%; tin - 60% | - | - | 1µF | DUAL | GULL WING | 260 | - | compliant | 30 | - | R-PDSO-G3 | Not Qualified | X7R | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | - | N-CHANNEL | TO-236AB | wire | 0.031 Ω | - | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 0.75 W | - | - | - | - | 1 | 16V | 1.5 mm | - | - | ||
| SI2312BDS-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRL3713STRLPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 75A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 0.4 kg | 2 | SILICON | 1 | POS40 | - | - | - | - | KGM | 1206 | 3216 | - | 75 A | - | tube | - | - | 415.00 | - | INTERNATIONAL RECTIFIER CORP | - | - | MLCC | - | 183...240 °C | - | SMD | - | 175 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | Yes | - | 285...330 °C | - | - | - | - | 29*25*40/30 | - | - | - | - | ceramic | - | - | -55...125°C | coil | ±5% | e3 | Yes | EAR99 | Soft tin-lead solder Sn/Pb with flux | MATTE TIN OVER NICKEL | - | - | - | 10pF | SINGLE | GULL WING | - | - | compliant | - | 3 | R-PSSO-G2 | Not Qualified | C0G (NP0) | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | DRAIN | SWITCHING | N-CHANNEL | - | - | 0.003 Ω | - | 1040 A | 30 V | 1530 mJ | METAL-OXIDE SEMICONDUCTOR | 330 W | - | - | - | - | 1 | 1kV | 1.5 mm | - | - | ||
| IRL3713STRLPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF7101TRPBFAnlielectronics Тип | International Rectifier |
Description: Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 0.5 kg | 8 | SILICON | 2 | - | - | - | - | - | - | - | - | - | 3.5 A | POS40 | - | - | - | - | 517.00 | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | 183...240 °C | - | - | 150 °C | - | PLASTIC/EPOXY | LEAD FREE, SO-8 | RECTANGULAR | SMALL OUTLINE | Transferred | SOT | - | Yes | 28*25*20/50 | - | 285...330 °C | - | - | - | - | - | - | - | - | - | - | - | - | coil | - | e3 | Yes | EAR99 | Soft lead-tin solder Sn/Pb with flux | MATTE TIN | - | - | - | - | DUAL | GULL WING | 260 | - | unknown | 30 | 8 | R-PDSO-G8 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | 0.1 Ω | tube | 14 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 2 W | - | - | - | - | 1 | - | 1.0 mm | - | - | ||
| IRF7101TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF7301TRAnlielectronics Тип | Infineon Technologies AG |
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 0.2 kg | 8 | SILICON | 2 | - | - | - | - | - | - | - | - | - | 4.3 A | POS40 | - | - | - | - | 215.00 | INFINEON TECHNOLOGIES AG | - | - | - | - | - | 183...240 °C | - | - | - | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | No | - | - | 285...330 °C | - | - | - | - | 29*25*35/50 | - | - | - | - | - | - | - | coil | - | e3 | - | EAR99 | Soft Tin-Lead Solder Sn/Pb | MATTE TIN | tin - 40%; lead - 60% | LOGIC LEVEL COMPATIBLE | - | - | DUAL | GULL WING | - | - | unknown | - | - | R-PDSO-G8 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | - | N-CHANNEL | MS-012AA | - | 0.05 Ω | wire | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | 2 | - | 2 mm | - | - | ||
| IRF7301TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSIA445EDJ-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 12A I(D), 20V, 0.0165ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 0.2 kg | 6 | SILICON | 1 | POS40 | - | - | - | - | KGM | 1206 | 3216 | - | 12 A | - | tube | - | - | 0.055 g | - | VISHAY INTERTECHNOLOGY INC | - | - | MLCC | - | - | 183...240 °C | SMD | - | - | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6 | SQUARE | SMALL OUTLINE | Active | - | - | Yes | - | - | 285...330 °C | - | - | 28*25*20/50 | - | - | - | - | - | ceramic | - | - | -55...125°C | coil | ±5% | - | - | EAR99 | Sn/Pb lead-tin solder with flux, soft | - | - | - | - | 1µF | DUAL | NO LEAD | 260 | - | compliant | - | - | S-PDSO-N6 | - | X7R | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | DRAIN | SWITCHING | P-CHANNEL | - | - | 0.0165 Ω | - | 50 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | 50V | 0.6 mm | - | - | ||
| SIA445EDJ-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSQJ951EP-T1_GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 30A I(D), 30V, 0.017ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 20 Weeks | YES | - | 4 | SILICON | 2 | - | - | - | - | - | - | - | - | - | 30 A | - | - | - | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G4 | RECTANGULAR | SMALL OUTLINE | Active | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | SINGLE | GULL WING | - | - | unknown | - | - | R-PSSO-G4 | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | DRAIN | - | P-CHANNEL | - | - | 0.017 Ω | - | 120 A | 30 V | 36.5 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | ||
| SQJ951EP-T1_GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF7807VD1TRPBFAnlielectronics Тип | International Rectifier |
Small Signal Field-Effect Transistor, 8.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 8 | SILICON | 1 | - | - | - | - | - | KGM | 1206 | 3216 | - | 8.3 A | - | - | - | - | 514.50 | - | INTERNATIONAL RECTIFIER CORP | - | - | MLCC | - | - | - | SMD | - | 150 °C | - | PLASTIC/EPOXY | SO-8 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | - | Yes | - | - | - | - | - | - | 43*28.5*19.5/28 | - | - | - | - | ceramic | - | - | -55...125°C | - | ±20% | e3 | Yes | EAR99 | - | MATTE TIN | - | - | - | 22nF | DUAL | GULL WING | 260 | - | unknown | 30 | 8 | R-PDSO-G8 | Not Qualified | X7R | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | MS-012AA | - | 0.025 Ω | - | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | - | - | - | 1 | 50V | - | - | - | ||
| IRF7807VD1TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI7852DP-T1-E3Anlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 7.6A I(D), 80V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 5 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 7.6 A | - | - | - | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | 150 °C | - | UNSPECIFIED | ROHS COMPLIANT, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) - annealed | - | FAST SWITCHING | - | - | DUAL | C BEND | 260 | - | compliant | 30 | - | R-XDSO-C5 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | DRAIN | SWITCHING | N-CHANNEL | - | - | 0.0165 Ω | - | 50 A | 80 V | - | METAL-OXIDE SEMICONDUCTOR | 5.2 W | - | - | - | - | 1 | - | - | - | - | ||
| SI7852DP-T1-E3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI7898DP-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 3A I(D), 150V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 5 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 3 A | - | - | - | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | 150 °C | -55 °C | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) | - | - | - | - | DUAL | C BEND | 260 | - | compliant | 30 | - | R-XDSO-C5 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | DRAIN | SWITCHING | N-CHANNEL | - | - | 0.085 Ω | - | 25 A | 150 V | - | METAL-OXIDE SEMICONDUCTOR | 5 W | - | - | - | - | 1 | - | - | - | - | ||
| SI7898DP-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSIRA20DP-T1-RE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 20 Weeks | YES | - | 5 | SILICON | 1 | - | - | - | - | - | - | - | - | 2017-03-08 | 100 A | - | - | - | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | Yes | - | - | - | - | - | - | - | - | 123 ns | 86 ns | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | DUAL | FLAT | NOT SPECIFIED | - | unknown | NOT SPECIFIED | - | R-PDSO-F5 | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | DRAIN | SWITCHING | N-CHANNEL | - | - | 0.00082 Ω | - | 500 A | 25 V | 180 mJ | METAL-OXIDE SEMICONDUCTOR | 104 W | - | - | 720 pF | - | - | - | - | - | - | ||
| SIRA20DP-T1-RE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSIR462DP-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 18.9A I(D), 30V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 5 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 18.9 A | - | - | - | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | 150 °C | - | UNSPECIFIED | ROHS COMPLIANT, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) | - | - | - | - | DUAL | C BEND | 260 | - | compliant | 40 | - | R-XDSO-C5 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | DRAIN | SWITCHING | N-CHANNEL | - | - | 0.0079 Ω | - | 70 A | 30 V | 48 mJ | METAL-OXIDE SEMICONDUCTOR | 41.7 W | - | - | - | - | 1 | - | - | - | - | ||
| SIR462DP-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI1551DL-T1-E3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 0.29A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 6 | SILICON | 2 | - | - | - | - | - | - | - | - | - | 0.29 A | - | - | - | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | SC-70, 6 PIN | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | MATTE TIN | - | - | - | - | DUAL | GULL WING | - | - | compliant | - | - | R-PDSO-G6 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | - | N-CHANNEL AND P-CHANNEL | - | - | 1.9 Ω | - | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 0.3 W | - | - | - | - | 1 | - | - | - | - | ||
| SI1551DL-T1-E3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI3127DV-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 5.1A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks, 3 Days | YES | - | 6 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 5.1 A | - | - | - | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6 | RECTANGULAR | SMALL OUTLINE | Active | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) | - | - | - | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | R-PDSO-G6 | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | P-CHANNEL | MO-193AA | - | 0.089 Ω | - | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | 1 | - | - | - | - | ||
| SI3127DV-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI2301BDS-T1-E3Anlielectronics Тип | Vishay Intertechnologies |
Description: Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 2.2 A | - | - | - | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | TO-236, SOT-23, 3 PIN | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | MATTE TIN | - | - | - | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | R-PDSO-G3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | - | P-CHANNEL | TO-236AB | - | 0.1 Ω | - | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | 65 pF | - | 1 | - | - | - | - | ||
| SI2301BDS-T1-E3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI3457BDV-T1-E3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 6 | SILICON | 1 | - | green | - | transparent | Ø13.8x7.5mm | - | - | - | - | 3.7 A | - | - | - | - | 333 g | - | VISHAY INTERTECHNOLOGY INC | - | - | - | for soldering | - | - | THT | 20mA | 150 °C | - | PLASTIC/EPOXY | TSOP-6 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | 4.6kHz | Yes | - | - | - | 83dB | - | - | - | - | - | - | - | - | piezo signaller | - | -20...100°C | - | - | e3 | - | EAR99 | - | MATTE TIN | - | - | - | - | DUAL | GULL WING | 260 | 7.6mm | compliant | 30 | - | R-PDSO-G6 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | LED | - | - | P-CHANNEL | - | - | 0.054 Ω | - | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 2 W | - | - | - | - | 1 | 6...15V DC | 13.8mm | 7.5mm | - | ||
| SI3457BDV-T1-E3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPK636BAAnlielectronics Тип | Niko Semicondutor Co Ltd |
Power Field-Effect Transistor, 20A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 8 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 20 A | - | - | - | - | - | - | NIKO SEMICONDUCTOR CO LTD | - | - | - | - | - | - | - | - | - | -55 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-F8 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | DUAL | FLAT | NOT SPECIFIED | - | unknown | NOT SPECIFIED | - | R-PDSO-F8 | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | - | N-CHANNEL | - | - | 0.012 Ω | - | 120 A | 30 V | 20 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | ||
| PK636BA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипVP1008BAnlielectronics Тип | Supertex Inc |
Small Signal Field-Effect Transistor, 0.88A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | 1 | - | - | 65mm | - | - | - | - | - | - | 0.88 A | - | - | 50mm | 119.5mm | 1320 g | - | SUPERTEX INC | 35mm | 103mm | - | - | - | - | - | - | 150 °C | - | METAL | CYLINDRICAL, O-MBCY-W3 | ROUND | CYLINDRICAL | Obsolete | - | - | No | - | - | - | - | - | - | - | - | - | - | cable chain | - | - | frames openable from inner radius | - | - | - | e0 | - | EAR99 | - | TIN LEAD | - | - | - | - | BOTTOM | WIRE | - | - | unknown | - | - | O-MBCY-W3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | P-CHANNEL | TO-39 | - | 5 Ω | - | - | 100 V | - | METAL-OXIDE SEMICONDUCTOR | 6.25 W | - | - | 25 pF | - | - | - | - | - | 1040mm | ||
| VP1008B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипVP1008BAnlielectronics Тип | Temic Semiconductors |
Description: Power Field-Effect Transistor, 0.79A I(D), 100V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | 1 | - | - | 150mm | - | - | - | - | - | - | 0.79 A | - | - | 50mm | 141.5mm | 1400 g | - | TEMIC SEMICONDUCTORS | 35mm | 125mm | - | - | - | - | - | - | - | - | METAL | - | ROUND | CYLINDRICAL | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | cable chain | - | - | frames openable from inner radius | - | - | - | - | - | EAR99 | - | - | - | - | 8541.29.00.95 | - | BOTTOM | WIRE | - | - | unknown | - | - | O-MBCY-W3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | DRAIN | SWITCHING | P-CHANNEL | TO-205AD | - | 5 Ω | - | 3 A | 100 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | 6.25 W | - | - | - | - | 1040mm | ||
| VP1008B |
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