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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Surface Mount Number of Terminals Transistor Element Material Exterior Housing Material Backlight colour Bending radius Body colour Body dimensions Colour Date Of Intro Drain Current-Max (ID) External height External thread External width Gross weight Handle material Ihs Manufacturer Internal height Internal width Kind of toggle Knob height Leads Lever length Manufacturer series Mounting Operating current Operating Temperature-Max Operating Temperature-Min Package Body Material Package Description Package Shape Package Style Part Life Cycle Code Part Package Code Resonant frequency Rohs Code Sound level Thread length Transition Frequency-Nom (fT) Turn-off Time-Max (toff) Turn-on Time-Max (ton) Type of cable accessories Type of mounting element Type of sound transducer Version Operating temperature JESD-609 Code Pbfree Code ECCN Code Terminal Finish Additional Feature HTS Code Terminal Position Terminal Form Peak Reflow Temperature (Cel) Terminal pitch Reach Compliance Code Time@Peak Reflow Temperature-Max (s) Pin Count Reference Standard JESD-30 Code Qualification Status Configuration Operating Mode Illumination Case Connection Transistor Application Polarity/Channel Type JEDEC-95 Code Drain-source On Resistance-Max Pulsed Drain Current-Max (IDM) DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology Power Dissipation-Max (Abs) Collector Current-Max (IC) DC Current Gain-Min (hFE) Feedback Cap-Max (Crss) Power Dissipation Ambient-Max Saturation Current Operating voltage Diameter Height Length
Vishay Intertechnologies SI3127DV-T1-GE3
Mfr. Тип
SI3127DV-T1-GE3
Anlielectronics Тип

Vishay Intertechnologies
Small Signal Field-Effect Transistor, 5.1A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 10 Weeks, 3 Days YES 6 SILICON 1 - - - - - - 5.1 A - - - - - VISHAY INTERTECHNOLOGY INC - - - - - - - - - - - PLASTIC/EPOXY HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6 RECTANGULAR SMALL OUTLINE Active - - Yes - - - - - - - - - - e3 - EAR99 Matte Tin (Sn) - - DUAL GULL WING 260 - compliant 30 - - R-PDSO-G6 - SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - - SWITCHING P-CHANNEL MO-193AA 0.089 Ω - 60 V - METAL-OXIDE SEMICONDUCTOR - - - - - 1 - - - -
    SI3127DV-T1-GE3
    SI3127DV-T1-GE3

    Vishay Intertechnologies
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Vishay Intertechnologies SI2301BDS-T1-E3
    Mfr. Тип
    SI2301BDS-T1-E3
    Anlielectronics Тип

    		Vishay Intertechnologies
    Description: Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - YES 3 SILICON 1 - - - - - - 2.2 A - - - - - VISHAY INTERTECHNOLOGY INC - - - - - - - - - 150 °C -55 °C PLASTIC/EPOXY TO-236, SOT-23, 3 PIN RECTANGULAR SMALL OUTLINE Not Recommended - - Yes - - - - - - - - - - e3 - EAR99 MATTE TIN - - DUAL GULL WING 260 - compliant 30 - - R-PDSO-G3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - - - P-CHANNEL TO-236AB 0.1 Ω - 20 V - METAL-OXIDE SEMICONDUCTOR - - - 65 pF - 1 - - - -
      SI2301BDS-T1-E3
      SI2301BDS-T1-E3

      Vishay Intertechnologies
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Vishay Intertechnologies SI3457BDV-T1-E3
      Mfr. Тип
      SI3457BDV-T1-E3
      Anlielectronics Тип

      		Vishay Intertechnologies
      Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 - YES 6 SILICON 1 green - transparent Ø13.8x7.5mm - - 3.7 A - - - 333 g - VISHAY INTERTECHNOLOGY INC - - - - for soldering - - THT 20mA 150 °C - PLASTIC/EPOXY TSOP-6 RECTANGULAR SMALL OUTLINE Obsolete - 4.6kHz Yes 83dB - - - - - - piezo signaller - -20...100°C e3 - EAR99 MATTE TIN - - DUAL GULL WING 260 7.6mm compliant 30 - - R-PDSO-G6 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE LED - - P-CHANNEL - 0.054 Ω - 30 V - METAL-OXIDE SEMICONDUCTOR 2 W - - - - 1 6...15V DC 13.8mm 7.5mm -
        SI3457BDV-T1-E3
        SI3457BDV-T1-E3

        Vishay Intertechnologies
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Niko Semicondutor Co Ltd PK636BA
        Mfr. Тип
        PK636BA
        Anlielectronics Тип

        		Niko Semicondutor Co Ltd
        Power Field-Effect Transistor, 20A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN-8
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 - YES 8 SILICON 1 - - - - - - 20 A - - - - - NIKO SEMICONDUCTOR CO LTD - - - - - - - - - - -55 °C PLASTIC/EPOXY SMALL OUTLINE, R-PDSO-F8 RECTANGULAR SMALL OUTLINE Contact Manufacturer - - Yes - - - - - - - - - - - - EAR99 - - - DUAL FLAT NOT SPECIFIED - unknown NOT SPECIFIED - - R-PDSO-F8 - SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - - - N-CHANNEL - 0.012 Ω 120 A 30 V 20 mJ METAL-OXIDE SEMICONDUCTOR - - - - - - - - - -
          PK636BA
          PK636BA

          Niko Semicondutor Co Ltd
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Supertex Inc VP1008B
          Mfr. Тип
          VP1008B
          Anlielectronics Тип

          		Supertex Inc
          Small Signal Field-Effect Transistor, 0.88A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 - NO 3 SILICON 1 - 65mm - - - - 0.88 A 50mm - 119.5mm 1320 g - SUPERTEX INC 35mm 103mm - - - - - - - 150 °C - METAL CYLINDRICAL, O-MBCY-W3 ROUND CYLINDRICAL Obsolete - - No - - - - - cable chain - - frames openable from inner radius - e0 - EAR99 TIN LEAD - - BOTTOM WIRE - - unknown - - - O-MBCY-W3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - - SWITCHING P-CHANNEL TO-39 5 Ω - 100 V - METAL-OXIDE SEMICONDUCTOR 6.25 W - - 25 pF - - - - - 1040mm
            VP1008B
            VP1008B

            Supertex Inc
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Temic Semiconductors VP1008B
            Mfr. Тип
            VP1008B
            Anlielectronics Тип

            		Temic Semiconductors
            Description: Power Field-Effect Transistor, 0.79A I(D), 100V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD,
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 - NO 3 SILICON 1 - 150mm - - - - 0.79 A 50mm - 141.5mm 1400 g - TEMIC SEMICONDUCTORS 35mm 125mm - - - - - - - - - METAL - ROUND CYLINDRICAL Obsolete - - - - - - - - cable chain - - frames openable from inner radius - - - EAR99 - - 8541.29.00.95 BOTTOM WIRE - - unknown - - - O-MBCY-W3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - DRAIN SWITCHING P-CHANNEL TO-205AD 5 Ω 3 A 100 V - METAL-OXIDE SEMICONDUCTOR - - - - 6.25 W - - - - 1040mm
              VP1008B
              VP1008B

              Temic Semiconductors
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Motorola Semiconductor Products BS170
              Mfr. Тип
              BS170
              Anlielectronics Тип

              		Motorola Semiconductor Products
              Description: Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 - NO 3 SILICON 1 - - black - - - 0.5 A - M12 - 149 g zinc die-cast MOTOROLA INC - - adjustable 36mm - 78mm - - - 150 °C - PLASTIC/EPOXY - ROUND CYLINDRICAL Transferred - - No - 63mm - - - - lever - - - e0 - EAR99 Tin/Lead (Sn/Pb) LOGIC LEVEL COMPATIBLE 8541.21.00.95 BOTTOM THROUGH-HOLE - - unknown - - - O-PBCY-T3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - - SWITCHING N-CHANNEL TO-92 5 Ω - 60 V - METAL-OXIDE SEMICONDUCTOR 0.83 W - - - 0.83 W - - - - -
                BS170
                BS170

                Motorola Semiconductor Products
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Nexperia PMV16XN
                Mfr. Тип
                PMV16XN
                Anlielectronics Тип

                		Nexperia
                Small Signal Field-Effect Transistor
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - YES 3 SILICON 1 - 45mm - - black 2017-02-17 6.8 A 23mm - 61mm 430 g - NEXPERIA 17mm 50mm - - - - LIGHT - - 150 °C -55 °C PLASTIC/EPOXY SOT-23, 3 PIN RECTANGULAR SMALL OUTLINE Active - - Yes - - - - - cable chain - - frames openable from outer radius - e3 - EAR99 TIN - - DUAL GULL WING 260 - compliant 30 - IEC-60134 R-PDSO-G3 - SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - - SWITCHING N-CHANNEL TO-236AB 0.02 Ω 27 A 20 V - METAL-OXIDE SEMICONDUCTOR 6.94 W - - 125 pF - 1 - - - 986mm
                  PMV16XN
                  PMV16XN

                  Nexperia
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  International Rectifier IRLML5203GTRPBF
                  Mfr. Тип
                  IRLML5203GTRPBF
                  Anlielectronics Тип

                  		International Rectifier
                  Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 - YES 3 SILICON 1 - - - - - - 3 A - - - - - INTERNATIONAL RECTIFIER CORP - - - - - - - - - 175 °C - PLASTIC/EPOXY SMALL OUTLINE, R-PDSO-G3 RECTANGULAR SMALL OUTLINE Transferred SOT-23 - Yes - - - - - - - - - - e3 Yes EAR99 MATTE TIN - - DUAL GULL WING 260 - unknown 30 3 - R-PDSO-G3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - - SWITCHING P-CHANNEL TO-236AB 0.098 Ω 24 A 30 V - METAL-OXIDE SEMICONDUCTOR 1.25 W - - - - 1 - - - -
                    IRLML5203GTRPBF
                    IRLML5203GTRPBF

                    International Rectifier
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Vishay Intertechnologies SQJA37EP-T1_GE3
                    Mfr. Тип
                    SQJA37EP-T1_GE3
                    Anlielectronics Тип

                    		Vishay Intertechnologies
                    Description: Power Field-Effect Transistor, 30A I(D), 30V, 0.0092ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 20 Weeks YES 4 SILICON 1 - - - - - - 30 A - - - - - VISHAY INTERTECHNOLOGY INC - - - - - - - - - 175 °C -55 °C PLASTIC/EPOXY SO-8L, 4 PIN RECTANGULAR SMALL OUTLINE Active - - Yes - - - 140 ns 30 ns - - - - - - - EAR99 - - - SINGLE GULL WING - - unknown - - AEC-Q101 R-PSSO-G4 - SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - DRAIN - P-CHANNEL - 0.0092 Ω 120 A 30 V 33.8 mJ METAL-OXIDE SEMICONDUCTOR - - - 470 pF - - - - - -
                      SQJA37EP-T1_GE3
                      SQJA37EP-T1_GE3

                      Vishay Intertechnologies
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Nexperia BUK9K17-60E
                      Mfr. Тип
                      BUK9K17-60E
                      Anlielectronics Тип

                      		Nexperia
                      Description: Power Field-Effect Transistor
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 - YES 6 SILICON 2 - - - - - - 26 A - - - - - NEXPERIA - - - - - - - - - - - PLASTIC/EPOXY SOP-8 RECTANGULAR SMALL OUTLINE Active - - Yes - - - - - - - - - - e3 - EAR99 TIN - - DUAL GULL WING 260 - not_compliant 30 - AEC-Q101; IEC-60134 R-PDSO-G6 - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE ENHANCEMENT MODE - DRAIN SWITCHING N-CHANNEL - 0.017 Ω 148 A 60 V 64 mJ METAL-OXIDE SEMICONDUCTOR - - - - - 1 - - - -
                        BUK9K17-60E
                        BUK9K17-60E

                        Nexperia
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Vishay Intertechnologies SQS484ENW-T1_GE3
                        Mfr. Тип
                        SQS484ENW-T1_GE3
                        Anlielectronics Тип

                        		Vishay Intertechnologies
                        Power Field-Effect Transistor, 16A I(D), 40V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 25 Weeks YES 5 SILICON 1 - - - - - - 16 A - - - - - VISHAY INTERTECHNOLOGY INC - - - - - - - - - 175 °C -55 °C PLASTIC/EPOXY - SQUARE SMALL OUTLINE Active - - Yes - - - - - - - - - - e3 - EAR99 TIN - - DUAL FLAT 245 - unknown 40 - AEC-Q101 S-PDSO-F5 - SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - DRAIN - N-CHANNEL - 0.0105 Ω 64 A 40 V 31.2 mJ METAL-OXIDE SEMICONDUCTOR - - - - - 1 - - - -
                          SQS484ENW-T1_GE3
                          SQS484ENW-T1_GE3

                          Vishay Intertechnologies
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Vishay Intertechnologies SI7212DN-T1-GE3
                          Mfr. Тип
                          SI7212DN-T1-GE3
                          Anlielectronics Тип

                          		Vishay Intertechnologies
                          Power Field-Effect Transistor, 4.9A I(D), 30V, 0.036ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1212-8, POWERPAK-8
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 - YES 6 SILICON 2 - - - - - - 4.9 A - - - - - VISHAY INTERTECHNOLOGY INC - - - - - - - - - 150 °C - UNSPECIFIED ROHS COMPLIANT, 1212-8, POWERPAK-8 SQUARE SMALL OUTLINE Active - - Yes - - - - - - - - - - e3 - EAR99 Matte Tin (Sn) - - DUAL C BEND 260 - compliant 30 - - S-XDSO-C6 Not Qualified SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE ENHANCEMENT MODE - DRAIN SWITCHING N-CHANNEL - 0.036 Ω 20 A 30 V 5 mJ METAL-OXIDE SEMICONDUCTOR 2.6 W - - - - 1 - - - -
                            SI7212DN-T1-GE3
                            SI7212DN-T1-GE3

                            Vishay Intertechnologies
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Vishay Intertechnologies SQM120N06-3M5L_GE3
                            Mfr. Тип
                            SQM120N06-3M5L_GE3
                            Anlielectronics Тип

                            		Vishay Intertechnologies
                            Description: Power Field-Effect Transistor, 120A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 18 Weeks YES 2 SILICON 1 - - - - - - 120 A - - - - - VISHAY INTERTECHNOLOGY INC - - - - - - - - - - - PLASTIC/EPOXY SMALL OUTLINE, R-PSSO-G2 RECTANGULAR SMALL OUTLINE Active - - Yes - - - - - - - - - - e3 - EAR99 TIN - - SINGLE GULL WING - - unknown - - - R-PSSO-G2 - SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - - - N-CHANNEL TO-263AB 0.0035 Ω 480 A 60 V 500 mJ METAL-OXIDE SEMICONDUCTOR - - - - - 1 - - - -
                              SQM120N06-3M5L_GE3
                              SQM120N06-3M5L_GE3

                              Vishay Intertechnologies
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Vishay Intertechnologies SI7852ADP-T1-E3
                              Mfr. Тип
                              SI7852ADP-T1-E3
                              Anlielectronics Тип

                              		Vishay Intertechnologies
                              Power Field-Effect Transistor, 12A I(D), 80V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 - YES 5 SILICON 1 - - - - - - 12 A - - - - - VISHAY INTERTECHNOLOGY INC - - - - - - - - - 150 °C - UNSPECIFIED ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 RECTANGULAR SMALL OUTLINE Not Recommended - - Yes - - - - - - - - - - e3 - EAR99 Matte Tin (Sn) - - DUAL C BEND 260 - compliant 30 - - R-XDSO-C5 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - DRAIN SWITCHING N-CHANNEL - 0.017 Ω 60 A 80 V 45 mJ METAL-OXIDE SEMICONDUCTOR 62.5 W - - - - 1 - - - -
                                SI7852ADP-T1-E3
                                SI7852ADP-T1-E3

                                Vishay Intertechnologies
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Motorola Semiconductor Products BSV52
                                Mfr. Тип
                                BSV52
                                Anlielectronics Тип

                                		Motorola Semiconductor Products
                                Transistor
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - YES - - 1 - - - - - - - - - - - - MOTOROLA INC - - - - - - - - - 150 °C - - - - - Obsolete - - No - - 400 MHz - - - - - - - e0 - EAR99 Tin/Lead (Sn/Pb) - - - - - - unknown - - - - - SINGLE - - - - NPN - - - - - - 0.225 W 0.1 A 40 - - - - - - -
                                  BSV52
                                  BSV52

                                  Motorola Semiconductor Products
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Philips Semiconductors BSP250
                                  Mfr. Тип
                                  BSP250
                                  Anlielectronics Тип

                                  		Philips Semiconductors
                                  Transistor
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - YES - - 1 - - - - - - 3 A - - - - - PHILIPS SEMICONDUCTORS - - - - - - - - - 150 °C - - , - - Transferred - - Yes - - - - - - - - - - e3 - EAR99 Matte Tin (Sn) - - - - - - unknown - - - - - SINGLE ENHANCEMENT MODE - - - P-CHANNEL - - - - - METAL-OXIDE SEMICONDUCTOR 1.65 W - - - - - - - - -
                                    BSP250
                                    BSP250

                                    Philips Semiconductors
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Vishay Intertechnologies SI7216DN-T1-E3
                                    Mfr. Тип
                                    SI7216DN-T1-E3
                                    Anlielectronics Тип

                                    		Vishay Intertechnologies
                                    Power Field-Effect Transistor, 6.5A I(D), 40V, 0.032ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 - YES 6 SILICON 2 - 125mm - - - - 6.5 A 49mm - 80mm 1200 g - VISHAY INTERTECHNOLOGY INC 35mm 60mm - - - - MEDIUM - - 150 °C - UNSPECIFIED ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 SQUARE SMALL OUTLINE Active - - Yes - - - - - cable chain - - frames openable from inner radius, - e3 - EAR99 Matte Tin (Sn) - annealed - - DUAL C BEND 260 - compliant 30 - - S-XDSO-C6 Not Qualified SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE ENHANCEMENT MODE - DRAIN SWITCHING N-CHANNEL - 0.032 Ω 20 A 40 V 5 mJ METAL-OXIDE SEMICONDUCTOR 20.8 W - - - - 1 - - - 1m
                                      SI7216DN-T1-E3
                                      SI7216DN-T1-E3

                                      Vishay Intertechnologies
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      Vishay Intertechnologies SI2319DS-T1-GE3
                                      Mfr. Тип
                                      SI2319DS-T1-GE3
                                      Anlielectronics Тип

                                      		Vishay Intertechnologies
                                      Description: Small Signal Field-Effect Transistor, 2.3A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 - YES 3 SILICON 1 - - - - - - 2.3 A - - - - - VISHAY INTERTECHNOLOGY INC - - - - - - - - - 150 °C -55 °C PLASTIC/EPOXY TO-236, SOT-23, 3 PIN RECTANGULAR SMALL OUTLINE Not Recommended - - Yes - - - - - - - - - - e3 - EAR99 MATTE TIN - - DUAL GULL WING 260 - compliant 30 - - R-PDSO-G3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - - SWITCHING P-CHANNEL TO-236AB 0.082 Ω - 40 V - METAL-OXIDE SEMICONDUCTOR - - - 65 pF - 1 - - - -
                                        SI2319DS-T1-GE3
                                        SI2319DS-T1-GE3

                                        Vishay Intertechnologies
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        Vishay Intertechnologies SI7958DP-T1-E3
                                        Mfr. Тип
                                        SI7958DP-T1-E3
                                        Anlielectronics Тип

                                        		Vishay Intertechnologies
                                        Power Field-Effect Transistor, 7.2A I(D), 40V, 0.0165ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 - YES 6 SILICON 2 - 150mm - - black - 7.2 A 35mm - 62mm 1100 g - VISHAY INTERTECHNOLOGY INC 25mm 40mm - - - - MEDIUM - - 150 °C - UNSPECIFIED SOP-8 RECTANGULAR SMALL OUTLINE Obsolete - - Yes - - - - - cable chain - - frames openable from inner radius, - e3 - EAR99 Matte Tin (Sn) - - DUAL C BEND 260 - compliant 40 - - R-XDSO-C6 Not Qualified SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE ENHANCEMENT MODE - DRAIN SWITCHING N-CHANNEL - 0.0165 Ω 40 A 40 V 61 mJ METAL-OXIDE SEMICONDUCTOR 3.5 W - - - - 1 - - - 1m
                                          SI7958DP-T1-E3
                                          SI7958DP-T1-E3

                                          Vishay Intertechnologies
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                                          Discrete Semiconductor Products

                                          Transistors - Special Purpose definition: Transistors - Special Purpose Product Listing: SI3127DV-T1-GE3,SI2301BDS-T1-E3,SI3457BDV-T1-E3,PK636BA,VP1008B.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - Special Purpose has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.