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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Surface Mount | Number of Terminals | Transistor Element Material | Exterior Housing Material | Bending radius | Colour | Drain Current-Max (ID) | External height | External width | Gross weight | Ihs Manufacturer | Internal height | Internal width | Manufacturer Package Code | Manufacturer series | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Type of cable accessories | Version | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | DC Current Gain-Min (hFE) | Feedback Cap-Max (Crss) | Power Dissipation Ambient-Max | Saturation Current | Length |
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  | Mfr. ТипSI1302DL-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Small Signal Field-Effect Transistor, 0.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 3 | SILICON | 1 | 150mm | black | 0.6 A | 43mm | 74mm | 1350 g | VISHAY INTERTECHNOLOGY INC | 30mm | 45mm | - | MEDIUM | 150 °C | -55 °C | PLASTIC/EPOXY | SC-70, 3 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | cable chain | frames openable from inner radius | e3 | - | EAR99 | MATTE TIN | - | - | DUAL | GULL WING | 260 | compliant | 30 | - | - | R-PDSO-G3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | 0.48 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 0.28 W | - | - | - | 1 | 1m | ||
| SI1302DL-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI5853DDC-T1-E3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 4A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 1 | - | - | 4 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | 150 °C | - | - | - | - | - | Obsolete | - | Yes | - | - | - | - | - | - | EAR99 | PURE MATTE TIN | - | - | - | - | - | compliant | - | - | - | - | - | SINGLE | - | - | - | P-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 3.1 W | - | - | - | 1 | - | ||
| SI5853DDC-T1-E3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFB3407ZPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | 1 | - | - | 120 A | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | 175 °C | - | - | , | - | - | Transferred | - | Yes | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 230 W | - | - | - | - | - | ||
| IRFB3407ZPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI4202DY-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Small Signal Field-Effect Transistor, 12.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 8 | SILICON | 2 | - | - | 12.1 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | e3 | Yes | EAR99 | Matte Tin (Sn) | - | - | DUAL | GULL WING | 260 | not_compliant | 30 | - | - | R-PDSO-G8 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | MS-012AA | 0.014 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 3.7 W | - | - | - | 1 | - | ||
| SI4202DY-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSIR401DP-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 50A I(D), 20V, 0.0032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 5 | SILICON | 1 | - | - | 50 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | PLASTIC/EPOXY | SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | EAR99 | - | - | - | DUAL | C BEND | NOT SPECIFIED | unknown | NOT SPECIFIED | - | - | R-PDSO-C5 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | 0.0032 Ω | 80 A | 20 V | 45 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| SIR401DP-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFS38N20DTRLPAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 2 | SILICON | 1 | - | - | 43 A | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | LEAD FREE, PLASTIC, D2PAK-3 | RECTANGULAR | SMALL OUTLINE | Transferred | D2PAK | Yes | - | - | - | - | e3 | Yes | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | - | 8541.29.00.95 | SINGLE | GULL WING | 260 | compliant | 30 | 3 | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-263AB | 0.054 Ω | 180 A | 200 V | 460 mJ | METAL-OXIDE SEMICONDUCTOR | 300 W | - | - | - | 1 | - | ||
| IRFS38N20DTRLP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF7317TRPBFAnlielectronics Тип | International Rectifier |
Description: Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 8 | SILICON | 2 | - | - | 6.6 A | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | Yes | - | - | - | - | e3 | Yes | EAR99 | MATTE TIN | AVALANCHE RATED | 8541.29.00.95 | DUAL | GULL WING | 260 | compliant | 30 | - | - | R-PDSO-G8 | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL AND P-CHANNEL | MS-012AA | 0.029 Ω | 26 A | 20 V | 100 mJ | METAL-OXIDE SEMICONDUCTOR | 2 W | - | - | 2 W | 1 | - | ||
| IRF7317TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSISS12DN-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 28 Weeks | YES | 5 | SILICON | 1 | - | - | 60 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | - | SQUARE | SMALL OUTLINE | Active | - | Yes | 80 ns | 90 ns | - | - | - | - | EAR99 | - | - | - | DUAL | NO LEAD | NOT SPECIFIED | compliant | NOT SPECIFIED | - | - | S-PDSO-N5 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.00198 Ω | 200 A | 40 V | 45 mJ | METAL-OXIDE SEMICONDUCTOR | 65.7 W | - | 90 pF | - | - | - | ||
| SISS12DN-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPSMN1R0-40YLDXAnlielectronics Тип | NXP Semiconductors |
PSMN1R0-40YLD - N-channel 40 V 1.1 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology SOIC 4-Pin
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 1 | - | - | 100 A | - | - | - | NXP SEMICONDUCTORS | - | - | SOT1023 | - | 175 °C | - | - | - | - | - | Transferred | SOIC | Yes | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | compliant | - | 4 | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 349 W | - | - | - | - | - | ||
| PSMN1R0-40YLDX | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRL2203NSTRLPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 2 | SILICON | 1 | - | - | 75 A | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | LEAD FREE, PLASTIC, D2PAK-3 | RECTANGULAR | SMALL OUTLINE | Transferred | D2PAK | Yes | - | - | - | - | e3 | Yes | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | - | SINGLE | GULL WING | 260 | not_compliant | 30 | 3 | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-263AB | 0.007 Ω | 400 A | 30 V | 290 mJ | METAL-OXIDE SEMICONDUCTOR | 180 W | - | - | - | 1 | - | ||
| IRL2203NSTRLPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI2301BDS-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | YES | 3 | SILICON | 1 | - | - | 2.2 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | TO-236, SOT-23, 3 PIN | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | Yes | - | - | - | - | e3 | - | EAR99 | MATTE TIN | - | - | DUAL | GULL WING | 260 | compliant | 30 | - | - | R-PDSO-G3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | P-CHANNEL | TO-236AB | 0.1 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | 65 pF | - | 1 | - | ||
| SI2301BDS-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPHKD3NQ10TAnlielectronics Тип | NXP Semiconductors |
TRANSISTOR 3 A, 100 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 8 | SILICON | 2 | - | - | 3 A | - | - | - | NXP SEMICONDUCTORS | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | Yes | - | - | - | - | e4 | Yes | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | DUAL | GULL WING | 260 | compliant | 30 | - | - | R-PDSO-G8 | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.09 Ω | 12 A | 100 V | - | METAL-OXIDE SEMICONDUCTOR | 2 W | - | - | - | 2 | - | ||
| PHKD3NQ10T | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFU430APBFAnlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 3 | SILICON | 1 | - | - | 5 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | IN-LINE | Active | - | Yes | - | - | - | - | e3 | - | EAR99 | MATTE TIN | - | - | SINGLE | THROUGH-HOLE | 260 | compliant | 30 | - | - | R-PSIP-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-251AA | 1.7 Ω | 20 A | 500 V | 130 mJ | METAL-OXIDE SEMICONDUCTOR | 110 W | - | - | - | 1 | - | ||
| IRFU430APBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI7949DP-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 3.2A I(D), 60V, 0.064ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 6 | SILICON | 2 | - | - | 3.2 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | 150 °C | - | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | e3 | - | EAR99 | Matte Tin (Sn) | - | - | DUAL | C BEND | - | compliant | - | - | - | R-XDSO-C6 | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | P-CHANNEL | - | 0.064 Ω | 25 A | 60 V | 24.2 mJ | METAL-OXIDE SEMICONDUCTOR | 3.5 W | - | - | - | 1 | - | ||
| SI7949DP-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSISH402DN-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | YES | 5 | SILICON | 1 | - | - | 35 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | , | SQUARE | SMALL OUTLINE | Active | - | Yes | 55 ns | 35 ns | - | - | e3 | - | EAR99 | Matte Tin (Sn) - annealed | - | - | DUAL | NO LEAD | 260 | unknown | 30 | - | - | S-PDSO-N5 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.006 Ω | 70 A | 30 V | 61 mJ | METAL-OXIDE SEMICONDUCTOR | 52 W | - | 140 pF | - | 1 | - | ||
| SISH402DN-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSQJA62EP-T1_GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 75A I(D), 60V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 25 Weeks | YES | 4 | SILICON | 1 | - | - | 75 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | 175 °C | -55 °C | PLASTIC/EPOXY | SO-8L, 4 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | 75 ns | 45 ns | - | - | - | - | EAR99 | - | - | - | SINGLE | GULL WING | - | unknown | - | - | AEC-Q101 | R-PSSO-G4 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | - | 0.0045 Ω | 140 A | 60 V | 88 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | 80 pF | - | - | - | ||
| SQJA62EP-T1_GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI7463ADP-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 46A I(D), 40V, 0.01ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 17 Weeks, 3 Days | YES | 5 | SILICON | 1 | - | - | 46 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | 150 °C | - | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | e3 | - | EAR99 | Matte Tin (Sn) | - | - | DUAL | C BEND | - | not_compliant | - | - | - | R-XDSO-C5 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | 0.01 Ω | 70 A | 40 V | 45 mJ | METAL-OXIDE SEMICONDUCTOR | 39 W | - | - | - | 1 | - | ||
| SI7463ADP-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSIA456DJ-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 2.6A I(D), 200V, 1.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, POWERPAK-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 6 | SILICON | 1 | - | - | 2.6 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | SC-70, POWERPAK-6 | SQUARE | SMALL OUTLINE | Active | - | Yes | 75 ns | 55 ns | - | - | e3 | - | EAR99 | Matte Tin (Sn) | - | - | DUAL | NO LEAD | - | compliant | - | - | - | S-PDSO-N6 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 1.38 Ω | 2 A | 200 V | - | METAL-OXIDE SEMICONDUCTOR | 19 W | - | 6 pF | - | 1 | - | ||
| SIA456DJ-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N6439Anlielectronics Тип | TE Connectivity |
TRANSISTOR,BJT,NPN,33V V(BR)CEO,SOT-119VAR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 1 | - | - | - | - | - | - | TE CONNECTIVITY LTD | - | - | CASE 316-01 | - | 200 °C | - | - | , | - | - | Transferred | - | Yes | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | 4 | - | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | - | 146 W | 10 | - | - | - | - | ||
| 2N6439 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI7880ADP-T1-E3Anlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 31A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 5 | SILICON | 1 | - | - | 31 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | 150 °C | -55 °C | UNSPECIFIED | - | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | Yes | - | - | - | - | - | - | EAR99 | Pure Matte Tin (Sn) | - | - | DUAL | C BEND | 260 | compliant | 30 | - | - | R-XDSO-C5 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.004 Ω | 70 A | 30 V | 80 mJ | METAL-OXIDE SEMICONDUCTOR | 83 W | - | - | - | 1 | - | ||
| SI7880ADP-T1-E3 |
Индекс :
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