- Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - Special Purpose
| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Surface Mount | Housing material | Number of Terminals | Transistor Element Material | Exterior Housing Material | Application area | Backlight voltage | Capacitors series | Case - inch | Case - mm | Date Of Intro | Dielectric strength | Drain Current-Max (ID) | Gross weight | Head and button shape | Ihs Manufacturer | Indicator type | Kind of capacitor | LED operating life | Mounting | Nominal voltage | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Relative humidity | Rohs Code | Switching cycles (electrical) | Switching scheme | Transition Frequency-Nom (fT) | Transport packaging size/quantity | Type of capacitor | Operating temperature | Tolerance | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Color | HTS Code | Capacitance | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Number of contacts | Dielectric | Contact resistance | Configuration | Insulation resistance | Note | Operating Mode | Case Connection | Switch type | Transistor Application | Polarity/Channel Type | Operating temperature range | Rated current | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Rated voltage | Feedback Cap-Max (Crss) | Highest Frequency Band | Power Dissipation Ambient-Max | Saturation Current | Operating voltage | Contacts | Backlight color |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипBC868Anlielectronics Тип | Philips Semiconductors |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | PHILIPS SEMICONDUCTORS | - | - | - | - | - | 150 °C | - | - | - | - | - | Transferred | - | - | No | - | - | 60 MHz | - | - | - | - | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 1 W | 1 A | 85 | - | - | - | - | - | - | - | - | ||
| BC868 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFS3207ZTRLPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 2 | SILICON | 1 | - | - | - | - | - | - | - | 120 A | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | LEAD FREE, D2PAK-3 | RECTANGULAR | SMALL OUTLINE | Transferred | D2PAK | - | Yes | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN OVER NICKEL | - | - | - | SINGLE | GULL WING | - | compliant | - | 3 | - | R-PSSO-G2 | Not Qualified | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | N-CHANNEL | - | - | TO-263AB | 0.0041 Ω | 670 A | 75 V | 170 mJ | METAL-OXIDE SEMICONDUCTOR | 300 W | - | - | - | - | - | - | 1 | - | - | - | ||
| IRFS3207ZTRLPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBC160Anlielectronics Тип | Infineon Technologies AG |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | 175 °C | - | - | - | - | - | Obsolete | - | - | No | - | - | 50 MHz | - | - | - | - | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | - | PNP | - | - | - | - | - | - | - | - | 3.7 W | 1 A | 40 | - | - | - | - | - | - | - | - | ||
| BC160 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBCY59IXAnlielectronics Тип | Motorola Semiconductor Products |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | MOTOROLA INC | - | - | - | - | - | 175 °C | - | - | , | - | - | Obsolete | - | - | No | - | - | 125 MHz | - | - | - | - | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 0.6 W | 0.2 A | - | - | - | - | - | - | - | - | - | ||
| BCY59IX | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBCY79IXAnlielectronics Тип | Philips Semiconductors |
Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | PHILIPS SEMICONDUCTORS | - | - | - | - | - | 175 °C | - | - | - | - | - | Obsolete | - | - | No | - | - | 180 MHz | - | - | - | - | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | - | PNP | - | - | - | - | - | - | - | - | 0.6 W | 0.2 A | - | - | - | - | - | - | - | - | - | ||
| BCY79IX | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBC107CAnlielectronics Тип | Freescale Semiconductor |
TRANSISTOR,BJT,NPN,45V V(BR)CEO,200MA I(C),TO-206AA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | - | - | - | - | - | - | - | - | - | - | - | MOTOROLA SEMICONDUCTOR PRODUCTS | - | - | - | - | - | 175 °C | - | - | , | - | - | Obsolete | - | - | No | - | - | 150 MHz | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | Single | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 0.6 W | 0.2 A | 420 | - | - | - | - | - | - | - | - | ||
| BC107C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBC108Anlielectronics Тип | Philips Semiconductors |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | PHILIPS SEMICONDUCTORS | - | - | - | - | - | 175 °C | - | - | , | - | - | Transferred | - | - | No | - | - | 150 MHz | - | - | - | - | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 0.6 W | 0.2 A | 110 | - | - | - | - | - | - | - | - | ||
| BC108 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFB9N60APBFAnlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | NO | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | 9.2 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | TO-220AB | - | Yes | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | 3 | - | R-PSFM-T3 | Not Qualified | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | N-CHANNEL | - | - | TO-220AB | 0.75 Ω | 37 A | 600 V | 290 mJ | METAL-OXIDE SEMICONDUCTOR | 170 W | - | - | - | - | - | - | - | - | - | - | ||
| IRFB9N60APBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBSH111BKAnlielectronics Тип | Nexperia |
Description: Small Signal Field-Effect Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 3 | SILICON | 1 | - | - | - | - | - | 2017-02-17 | - | 0.21 A | - | - | NEXPERIA | - | - | - | - | - | - | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | - | Yes | - | - | - | - | - | - | - | e3 | - | EAR99 | - | TIN | - | - | - | DUAL | GULL WING | 260 | compliant | 30 | - | IEC-60134 | R-PDSO-G3 | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | TO-236AB | 4 Ω | - | 55 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | 7 pF | - | - | 1 | - | - | - | ||
| BSH111BK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI2316BDS-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | YES | nickel-plated brass | 3 | SILICON | 1 | - | 12 V | - | - | - | - | 2000 (50 Hz / 5 s) V | 4.5 A | 75.20 | ring - cone; flat button | VISHAY INTERTECHNOLOGY INC | ring | - | ≥40000 hours | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | TO-236, SOT-23, 3 PIN | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | 45...85 % | Yes | ≥50000 | ON-(OFF) + OFF-(ON) without fixation | - | 62*27.5*28/100 | - | - | - | e3 | - | EAR99 | - | MATTE TIN | - | - | - | DUAL | GULL WING | 260 | compliant | - | - | - | R-PDSO-G3 | Not Qualified | - | - | ≤50 mΩ | SINGLE WITH BUILT-IN DIODE | ≥1000 MΩ | - | ENHANCEMENT MODE | - | GQ30 series vandal resistant button with backlight | SWITCHING | N-CHANNEL | -25…+55 °C | 5 A | TO-236AB | 0.05 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 1.66 W | - | - | 250 V | 37 pF | - | - | 1 | - | 4Pin+2Pin | green | ||
| SI2316BDS-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSIR826DP-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 60A I(D), 80V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 5 | SILICON | 1 | - | - | - | - | - | - | - | 60 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | - | Yes | - | - | - | - | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) | - | - | - | DUAL | C BEND | 260 | not_compliant | 30 | - | - | R-PDSO-C5 | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | N-CHANNEL | - | - | - | 0.0052 Ω | 100 A | 80 V | 61 mJ | METAL-OXIDE SEMICONDUCTOR | 104 W | - | - | - | - | - | - | 1 | - | - | - | ||
| SIR826DP-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBC109CAnlielectronics Тип | National Semiconductor Corporation |
TRANSISTOR,BJT,NPN,20V V(BR)CEO,200MA I(C),TO-18
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | plastic | - | - | 1 | for cars | - | - | - | - | - | - | - | 170.50 | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | 12 / 24 V | 175 °C | - | - | - | - | - | Obsolete | - | - | No | - | - | 150 MHz | 48*31.5*22.5/40 | - | - | - | e0 | - | EAR99 | Splitter plug / 2x sockets | Tin/Lead (Sn/Pb) | black | - | - | - | - | - | compliant | - | - | - | - | - | 2+2x2 | - | - | SINGLE | - | cable length 30 cm | - | - | - | - | NPN | - | 5 A | - | - | - | - | - | - | 0.6 W | 0.2 A | 420 | - | - | - | - | - | - | - | - | ||
| BC109C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMRF183Anlielectronics Тип | Motorola Semiconductor Products |
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 360B-04, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 2 | SILICON | 1 | - | - | - | - | - | - | - | 5 A | - | - | MOTOROLA INC | - | - | - | - | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | 8541.29.00.75 | - | DUAL | FLAT | - | unknown | - | - | - | R-CDFM-F2 | Not Qualified | - | - | - | SINGLE | - | - | ENHANCEMENT MODE | SOURCE | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | 65 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | ULTRA HIGH FREQUENCY BAND | 140 W | - | - | - | - | ||
| MRF183 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI4618DY-T1-E3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 6.7A I(D), 30V, 0.017ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 8 | SILICON | 2 | - | - | - | - | - | - | - | 6.7 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | ROHS COMPLIANT, SOP-8 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | Yes | - | - | - | - | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) | - | - | - | DUAL | GULL WING | 260 | compliant | 30 | - | - | R-PDSO-G8 | Not Qualified | - | - | - | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | - | 0.017 Ω | 35 A | 30 V | 11.2 mJ | METAL-OXIDE SEMICONDUCTOR | 4.16 W | - | - | - | - | - | - | 1 | - | - | - | ||
| SI4618DY-T1-E3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSUD08P06-155L-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 8.2A I(D), 60V, 0.155ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | YES | - | 2 | SILICON | 1 | - | - | - | - | - | - | - | 8.2 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Active | TO-252 | - | Yes | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | Matte Tin (Sn) - annealed | - | - | - | SINGLE | GULL WING | 260 | not_compliant | 30 | 4 | - | R-PSSO-G2 | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | DRAIN | - | - | P-CHANNEL | - | - | TO-252 | 0.155 Ω | 18 A | 60 V | 7.2 mJ | METAL-OXIDE SEMICONDUCTOR | 20.8 W | - | - | - | - | - | - | 1 | - | - | - | ||
| SUD08P06-155L-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBC109CAnlielectronics Тип | North American Philips Discrete Products Div |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV | - | - | - | - | - | 175 °C | - | - | - | - | - | Transferred | - | - | No | - | - | 150 MHz | - | - | - | - | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 0.6 W | 0.2 A | 420 | - | - | - | - | - | - | - | - | ||
| BC109C North American Philips Discrete Products Div
RoHS :
Инкапсуляция :
-
Есть складские запасы :
-
1 :
-
| ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBC109CAnlielectronics Тип | Bharat Electronics Ltd |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | 1 | - | - | KGM | 1812 | 4532 | - | - | - | 0.055 g | - | BHARAT ELECTRONICS LTD | - | MLCC | - | SMD | - | 175 °C | - | - | - | - | - | Contact Manufacturer | - | - | - | - | - | 150 MHz | - | ceramic | -55...85°C | ±10% | - | - | EAR99 | - | - | - | - | 10µF | - | - | - | unknown | - | - | - | - | - | - | X5R | - | SINGLE | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 0.6 W | 0.2 A | 420 | - | - | - | - | - | 25V | - | - | ||
| BC109C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI7456DDP-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 27.8A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks, 4 Days | YES | - | 5 | SILICON | 1 | - | - | - | - | - | - | - | 27.8 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | Yes | - | - | - | - | - | - | - | e3 | - | EAR99 | - | MATTE TIN | - | - | - | DUAL | C BEND | 260 | not_compliant | 30 | - | - | R-PDSO-C5 | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | N-CHANNEL | - | - | - | 0.023 Ω | 70 A | 100 V | 11.2 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | 1 | - | - | - | ||
| SI7456DDP-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBC108Anlielectronics Тип | Bharat Electronics Ltd |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | 1 | - | - | - | - | - | - | - | - | 4.87 | - | BHARAT ELECTRONICS LTD | - | - | - | - | - | 175 °C | - | - | , | - | - | Contact Manufacturer | - | - | - | - | - | 150 MHz | 62*27.5*17/595 | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 0.6 W | 0.2 A | 110 | - | - | - | - | - | - | - | - | ||
| BC108 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPXT2222AAnlielectronics Тип | Philips Semiconductors |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | PHILIPS SEMICONDUCTORS | - | - | - | - | - | 150 °C | - | - | - | - | - | Transferred | - | - | No | - | - | 300 MHz | - | - | - | - | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 1 W | 0.6 A | 40 | - | - | - | - | - | - | - | - | ||
| PXT2222A |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ