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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Surface Mount | Housing material | Housing Material | Number of Terminals | Transistor Element Material | Exterior Housing Material | Capacitors series | Case - inch | Case - mm | Case material | Color button/ housing | Date Of Intro | Diameter of the protected wire (cable) | Dielectric strength | Drain Current-Max (ID) | Emitter type | Emitter Type | Expansion range | Gross weight | Gross Weight | Holding current | Ihs Manufacturer | Indicator type | Indicator Type | Interrupt current | Kind of capacitor | Manufacturer Package Code | Maximum voltage | Mounting | Mounting diameter | Mounting Diameter | Mounting method | Nominal current | Nominal Current | Nominal voltage | Nominal Voltage | Number of switching cycles (electrical) | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Protected wire (cable) diameter | Rohs Code | Switching scheme | Teral type | Teral Type | Transition Frequency-Nom (fT) | Transport package size/quantity | Transport packaging size/quantity | Transport Packaging Size/Quantity | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Type of capacitor | Type of fuse | Operating temperature | Packaging | Tolerance | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Color | Additional Feature | HTS Code | Capacitance | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Dielectric | Contact resistance | Configuration | Operating Mode | Case Connection | Response time | Transistor Application | Fuse type | Polarity/Channel Type | Operating temperature range | Rated current | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Rated voltage | Feedback Cap-Max (Crss) | Saturation Current | Operating voltage | Diameter | Height | Width | Wall thickness |
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  | Mfr. ТипBUK98150-55A/CUFAnlielectronics Тип | NXP Semiconductors |
Description: N-channel TrenchMOS logic level FET SC-73 4-Pin
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 4 | SILICON | 1 | - | - | - | - | white/ black | - | - | 1500 V | 5.5 A | - | - | - | 5.35 | - | - | NXP SEMICONDUCTORS | - | - | - | - | SOT223 | - | - | - | - | - | - | - | - | - | ≥10000 | - | - | PLASTIC/EPOXY | SC-73, 4 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | SC-73 | - | Yes | OFF-ON (2P) | - | - | - | - | 48*31.5*27/2000 | - | - | - | - | - | - | - | - | e3 | - | EAR99 | PBS101 series pushbutton switch, V-type terminals | Tin (Sn) | - | - | 8541.29.00.75 | - | DUAL | GULL WING | 260 | - | compliant | 30 | 4 | AEC-Q101; IEC-60134 | R-PDSO-G4 | - | - | ≤50 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | N-CHANNEL | -25…+85 °C | 4/ 2 | - | 0.161 Ω | 22 A | 55 V | 22 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | 125/ 250 (AC) | - | 1 | - | button - 5.8 | 13.6 | 23.5 | - | ||
| BUK98150-55A/CUF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFH7932TRPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 24A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | 24 A | - | - | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | RECTANGULAR | SMALL OUTLINE | Transferred | QFN | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN | - | - | - | - | DUAL | NO LEAD | 260 | - | compliant | 30 | 8 | - | R-PDSO-N3 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | N-CHANNEL | - | - | - | 0.0033 Ω | 192 A | 30 V | 14 mJ | METAL-OXIDE SEMICONDUCTOR | 3.4 W | - | - | - | - | - | - | - | - | - | - | ||
| IRFH7932TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS8050DAnlielectronics Тип | Jiangsu Changjiang Electronics Technology Co Ltd |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO LTD | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | Contact Manufacturer | - | - | Yes | - | - | - | 150 MHz | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 0.625 W | 0.5 A | 160 | - | - | - | - | - | - | - | - | ||
| S8050D Jiangsu Changjiang Electronics Technology Co Ltd
RoHS :
Инкапсуляция :
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Есть складские запасы :
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1 :
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 | Mfr. ТипFDS6912AAnlielectronics Тип | Rochester Electronics LLC |
6000mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | nickel-plated brass | - | 8 | SILICON | 2 | - | - | - | - | - | - | - | - | 6 A | point flat | - | - | 19.13 | - | - | ROCHESTER ELECTRONICS LLC | GQ19 series antivandal indicator | - | - | - | - | - | - | 19 mm | - | - | 15 mA | - | 3-36 V | - | - | - | - | PLASTIC/EPOXY | SO-8 | RECTANGULAR | SMALL OUTLINE | Active | SOT | - | Yes | - | 2S (screw)min | - | - | - | 62*27.5*28/150 | - | - | - | - | - | - | - | - | e3 | Yes | - | - | MATTE TIN | blue | LOGIC LEVEL COMPATIBLE | - | - | DUAL | GULL WING | 260 | - | unknown | 30 | 8 | - | R-PDSO-G8 | COMMERCIAL | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | N-CHANNEL | - | - | - | 0.028 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | 1 | - | - | - | - | - | ||
| FDS6912A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI7846DP-T1-E3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 4A I(D), 150V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | nickel-plated brass | - | 5 | SILICON | 1 | - | - | - | - | - | - | - | - | 4 A | dot round | - | - | 5.80 | - | - | VISHAY INTERTECHNOLOGY INC | Vandal-proof indicator GQ8 series | - | - | - | - | - | - | 8 mm | - | - | 15 mA | - | 12-24 V | - | - | 150 °C | - | UNSPECIFIED | ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | Yes | - | - | - | - | 62*27.5*28/200 | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) - annealed | blue | FAST SWITCHING | - | - | DUAL | C BEND | 260 | - | compliant | 30 | - | - | R-XDSO-C5 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | N-CHANNEL | - | - | - | 0.05 Ω | 50 A | 150 V | - | METAL-OXIDE SEMICONDUCTOR | 5.2 W | - | - | - | - | 1 | - | - | - | - | - | ||
| SI7846DP-T1-E3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSQ2319ADS-T1_GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 15 Weeks | YES | - | Nickel-Plated Brass | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | 4.6 A | - | Flat Point | - | - | 5.17 | - | VISHAY INTERTECHNOLOGY INC | - | GQ8 Series Vandal-Proof Indicator | - | - | - | - | - | - | 8 mm | - | - | 15 mA | - | 12-24 V | - | 150 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | End Of Life | - | - | Yes | - | - | Flexible Leadsmin | - | - | - | 28*27*31/300 | 54 ns | 36 ns | - | - | - | - | - | e3 | - | EAR99 | - | MATTE TIN | Red | - | - | - | DUAL | GULL WING | 260 | - | unknown | 30 | - | AEC-Q101 | R-PDSO-G3 | - | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | P-CHANNEL | - | - | TO-236AB | 0.075 Ω | 18 A | 40 V | 8.4 mJ | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | - | - | 70 pF | 1 | - | - | - | - | - | ||
| SQ2319ADS-T1_GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSIHG22N60E-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | nickel-plated brass | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | 21 A | point flat | - | - | 3.55 | - | - | VISHAY INTERTECHNOLOGY INC | GQ6 series vandal-resistant indicator | - | - | - | - | - | - | 6 mm | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | - | Yes | - | flexible leadsmin | - | - | - | 62*27.5*28/200 | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | red | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | - | compliant | NOT SPECIFIED | - | - | R-PSFM-T3 | - | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | N-CHANNEL | - | 15 mA | TO-247AC | 0.18 Ω | 56 A | 600 V | 367 mJ | METAL-OXIDE SEMICONDUCTOR | 227 W | - | - | 12-24 V | - | - | - | - | - | - | - | ||
| SIHG22N60E-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAP30T10GH-HFAnlielectronics Тип | Advanced Power Electronics Corp |
TRANSISTOR 19 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 2 | SILICON | 1 | - | - | - | - | - | - | - | - | 19 A | - | - | - | - | - | - | ADVANCED POWER ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | TO-252 | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | SINGLE | GULL WING | NOT SPECIFIED | - | compliant | NOT SPECIFIED | 4 | - | R-PSSO-G2 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | N-CHANNEL | - | - | TO-252 | 0.055 Ω | 60 A | 100 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | ||
| AP30T10GH-HF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI4866DY-T1-E3Anlielectronics Тип | Vishay Intertechnologies |
Description: Small Signal Field-Effect Transistor, 11A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | SILICON | 1 | - | - | - | - | - | - | - | - | 11 A | - | - | - | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | -55 °C | - | - | - | - | End Of Life | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) | - | - | - | - | - | - | 260 | - | not_compliant | 30 | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | N-CHANNEL | - | - | - | 0.0055 Ω | - | 12 V | - | METAL-OXIDE SEMICONDUCTOR | 3 W | - | - | - | - | 1 | - | - | - | - | - | ||
| SI4866DY-T1-E3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBCV27Anlielectronics Тип | Philips Semiconductors |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PHILIPS SEMICONDUCTORS | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | Transferred | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | MATTE TIN | - | - | - | - | - | - | 260 | - | unknown | - | - | - | - | - | - | - | DARLINGTON | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 0.25 W | 0.3 A | 20000 | - | - | - | - | - | - | - | - | ||
| BCV27 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF7343TRPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 8 | SILICON | 2 | - | - | - | - | - | - | - | - | 4.7 A | - | - | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN | - | HIGH RELIABILITY | - | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | - | R-PDSO-G8 | Not Qualified | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | N-CHANNEL AND P-CHANNEL | - | - | MS-012AA | 0.05 Ω | 38 A | 55 V | 72 mJ | METAL-OXIDE SEMICONDUCTOR | 2 W | - | - | - | - | 1 | - | - | - | - | - | ||
| IRF7343TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDMS7660Anlielectronics Тип | Rochester Electronics LLC |
25A, 30V, 0.0028ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 5 | SILICON | 1 | - | - | - | - | - | - | - | - | 25 A | - | - | - | - | - | - | ROCHESTER ELECTRONICS LLC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | ROHS COMPLIANT, POWER 56, 8 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | - | MATTE TIN | - | - | - | - | DUAL | NO LEAD | 260 | - | unknown | 30 | 240 | - | R-PDSO-N5 | COMMERCIAL | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | N-CHANNEL | - | - | MO-240AA | 0.0028 Ω | 150 A | 30 V | 128 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | 1 | - | - | - | - | - | ||
| FDMS7660 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBCV27Anlielectronics Тип | Secos Corporation |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2-7 mm | 491.80 | - | - | SECOS CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Active | - | 2 mm | Yes | - | - | - | - | - | 60*32.5*43.5/10 | - | - | - | - | - | - | coil, 200 m | - | - | - | EAR99 | Black PET protective braid | - | - | - | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2.0 mm | - | - | 0.5 mm | ||
| BCV27 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDC6318PAnlielectronics Тип | Rochester Electronics LLC |
2500mA, 12V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 6 | SILICON | 2 | - | - | - | - | - | - | 7 mm | - | 2.5 A | - | - | 7-18 mm | 884.00 | - | - | ROCHESTER ELECTRONICS LLC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | SUPERSOT-6 | RECTANGULAR | SMALL OUTLINE | Active | SOT | - | Yes | - | - | - | - | - | 49*34*49/25 | - | - | - | - | - | - | 100 m coil | - | e3 | Yes | - | Black PET protective braiding | MATTE TIN | - | - | - | - | DUAL | GULL WING | 260 | - | unknown | 30 | 6 | - | R-PDSO-G6 | COMMERCIAL | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | P-CHANNEL | - | - | - | 0.09 Ω | - | 12 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | 1 | - | 10.0 mm | - | - | 0.5 mm | ||
| FDC6318P | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBCV27Anlielectronics Тип | Diotec Semiconductor AG |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DIOTEC SEMICONDUCTOR AG | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | Active | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | 260 | - | compliant | - | - | - | - | - | - | - | DARLINGTON | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 0.25 W | 0.3 A | 20000 | - | - | 1 | - | - | - | - | - | ||
| BCV27 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSIHG33N60E-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | NO | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | 33 A | - | - | - | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Active | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Yes | EAR99 | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | - | compliant | NOT SPECIFIED | - | - | R-PSFM-T3 | - | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | N-CHANNEL | - | - | TO-247AC | 0.099 Ω | 88 A | 600 V | 793 mJ | METAL-OXIDE SEMICONDUCTOR | 278 W | - | - | - | - | - | - | - | - | - | - | ||
| SIHG33N60E-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFP064PBFAnlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | NO | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | 70 A | - | - | - | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 175 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | TO-247AC | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN | - | - | - | - | SINGLE | THROUGH-HOLE | 260 | - | compliant | 30 | 3 | - | R-PSFM-T3 | Not Qualified | - | - | SINGLE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | N-CHANNEL | - | - | TO-247AC | 0.009 Ω | 520 A | 60 V | 1000 mJ | METAL-OXIDE SEMICONDUCTOR | 300 W | - | - | - | - | - | - | - | - | - | - | ||
| IRFP064PBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI1013R-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 0.35A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-75A, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 3 | SILICON | 1 | KGQ | 0603 | 1608 | - | - | - | - | - | 0.35 A | - | - | - | 0.04 | - | 0.5 A | VISHAY INTERTECHNOLOGY INC | - | - | 1.0 A | MLCC | - | 30 V | SMD | - | - | - | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | SC-75A, 3 PIN | RECTANGULAR | SMALL OUTLINE | End Of Life | - | - | Yes | - | - | - | - | - | 29*21*28/5000 | - | - | - | ceramic | Self-recovering fuse series SMD1206 | -55...125°C | - | ±2% | e3 | - | EAR99 | - | MATTE TIN | - | LOW THRESHOLD | - | 33pF | DUAL | GULL WING | 260 | 1.5-1.8 mm | compliant | 30 | - | - | R-PDSO-G3 | Not Qualified | C0G (NP0) | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | 0.1 s | SWITCHING | - | P-CHANNEL | -40...+85 °C | - | - | 1.2 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 0.175 W | - | - | - | - | 1 | 100V | - | 0.35-0.85 mm | 3.0-3.5 mm | - | ||
| SI1013R-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSUP40012EL-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | NO | - | - | 3 | SILICON | 1 | - | - | - | ceramic | - | 2018-11-13 | - | - | 150 A | - | - | - | 0.21 | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | SMD | - | - | - | - | - | 175 °C | -55 °C | PLASTIC/EPOXY | , | RECTANGULAR | FLANGE MOUNT | Active | - | - | Yes | - | - | - | - | - | 39*19*20.5/5000 | - | 166 ns | 74 ns | - | - | -55...+125 °C | - | - | - | - | EAR99 | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 6.1 mm | unknown | NOT SPECIFIED | - | - | R-PSFM-T3 | - | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | Fuse link in SMD case 2410 | N-CHANNEL | - | 0.25 A | TO-220AB | 0.00179 Ω | 300 A | 40 V | 125 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | 125 V | 101 pF | - | - | - | 2.6 mm | 2.6 mm | - | ||
| SUP40012EL-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI7112DN-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 11.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | YES | - | - | 5 | SILICON | 1 | - | 0402 | 1005 | - | - | - | - | - | 11.3 A | - | - | - | 0.03 g | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | MLCC | - | - | SMD | - | - | - | - | - | - | - | - | 150 °C | - | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8 | SQUARE | SMALL OUTLINE | Not Recommended | - | - | Yes | - | - | - | - | - | - | - | - | - | ceramic | - | -55...125°C | - | ±20% | e3 | - | EAR99 | - | Matte Tin (Sn) - annealed | - | - | - | 1µF | DUAL | C BEND | 260 | - | not_compliant | 30 | - | - | S-XDSO-C5 | Not Qualified | X7T | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | N-CHANNEL | - | - | - | 0.0075 Ω | 60 A | 30 V | 20 mJ | METAL-OXIDE SEMICONDUCTOR | 3.8 W | - | - | - | - | 1 | 4V | - | - | - | - | ||
| SI7112DN-T1-GE3 |
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