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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mounting Type | Surface Mount | Material | Housing material | Housing Material | Weight | Number of Terminals | Transistor Element Material | Exterior Housing Material | Accuracy of Readings | Alternating current | Ambient operating temperature | Ambient temperature during operation | Body diameter | Cable cross-section | Cable type | Cable Type | Contact Material | Date Of Intro | Description | Deviation | Dielectric strength | Drain Current-Max (ID) | Enhanced Relative Importance at 35°C | Force | Gross weight | Gross Weight | Ihs Manufacturer | Insulator Material | Long-term Frequency Instability (Aging) | Mating part | Maximum charging voltage | Measurement Range | Mounting hole size | Mounting Method | Noal current | Noal Current | Noal voltage | Nominal voltage | Number of Mate/Unmate Cycles | Number of switching cycles (electrical) | Number of wires | Operating Ambient Temperature | Operating Frequency Range | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Presence and type of backlight | Pushbutton shape/color | Rohs Code | Switching scheme | Tested for One Minute | Transition Frequency-Nom (fT) | Transport Package Size/Quantity | Transport packaging size/quantity | Transport Packaging size/quantity | Transport Packaging Size/Quantity | Trip temperature | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Wire cross-section | Wire insulation color | Wire length | Operating Temperature | JESD-609 Code | Pbfree Code | ECCN Code | Connector type | Type | Resistance | Terminal Finish | Color | Additional Feature | HTS Code | Capacitance | Pitch | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Frequency Stability | Pin Count | JESD-30 Code | Qualification Status | Number of contacts | Number of Contacts | Lead Length | Contact resistance | Configuration | Insulation resistance | Insulation Resistance | Voltage | Impedance | Current | Cable length | Operating Mode | Case Connection | Transistor Application | Fuse type | Polarity/Channel Type | Tool type | Operating temperature range | Operating Temperature Range | Rated current | Switching voltage | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Load Current | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Rated voltage | Connector pitch | Power Dissipation Ambient-Max | Saturation Current | Operating voltage | Battery type | Diameter | Height | Length | Width |
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  | Mfr. ТипPHN210Anlielectronics Тип | Nexperia |
Power Field-Effect Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | - | - | 8 | SILICON | 2 | - | - | - | - | - | - | - | - | - | 2017-02-01 | - | - | - | 3.4 A | - | - | - | 38.50 | NEXPERIA | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | SO-8 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | Yes | - | - | - | - | - | 34*24*30.5/200 | - | - | - | - | - | - | - | - | e4 | - | EAR99 | - | - | - | NICKEL PALLADIUM GOLD | - | LOGIC LEVEL COMPATIBLE | - | - | - | DUAL | GULL WING | - | - | compliant | - | - | - | - | R-PDSO-G8 | - | - | - | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | - | - | - | - | ENHANCEMENT MODE | - | SWITCHING | - | N-CHANNEL | - | - | - | - | - | MS-012AA | 0.1 Ω | 14 A | 30 V | 13 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| PHN210 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFL014NAnlielectronics Тип | Infineon Technologies AG |
Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.9 A | 95% | 1 - 30 N | - | 2.22 | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | - | - | - | - | 500 | - | - | -25 +70 °C | - | 150 °C | -55 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | No | - | ~ 500V | - | 42*28*18.5/2000 | - | - | - | - | - | - | - | - | - | - | e0 | - | EAR99 | - | - | - | Tin/Lead (Sn/Pb) | - | AVALANCHE RATED | - | - | - | SINGLE | GULL WING | NOT SPECIFIED | - | not_compliant | - | NOT SPECIFIED | - | - | R-PSSO-G3 | Not Qualified | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | 100 MOhm Min | ~ 50V | - | - | - | ENHANCEMENT MODE | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | - | - | TO-261AA | 0.16 Ω | - | 55 V | - | METAL-OXIDE SEMICONDUCTOR | - | 0.3 A | - | - | - | - | - | 1 | - | - | - | - | - | - | ||
| IRFL014N | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMMPQ3906Anlielectronics Тип | Freescale Semiconductor |
TRANSISTOR,BJT,ARRAY,INDEPENDENT,PNP,40V V(BR)CEO,200MA I(C),SO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 0.73 | MOTOROLA SEMICONDUCTOR PRODUCTS | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | - | , | - | - | Obsolete | - | - | - | No | - | - | 250 MHz | - | - | - | 40*30*28/18000 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PNP | - | - | - | - | - | - | - | - | - | - | - | - | - | 0.2 A | 100 | - | - | - | - | - | - | - | - | - | - | ||
| MMPQ3906 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N1711Anlielectronics Тип | Freescale Semiconductor |
TRANSISTOR,BJT,NPN,50V V(BR)CEO,1A I(C),TO-39
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | - | - | - | - | - | - | 0.1 g | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 267.00 | MOTOROLA SEMICONDUCTOR PRODUCTS | - | - | - | - | 2000 g | - | - | - | - | - | - | - | - | - | - | - | 200 °C | - | - | - | , | - | - | Obsolete | - | - | - | No | - | - | 70 MHz | 65*30*27/50 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | Single | - | - | - | - | - | - | - | - | - | - | NPN | - | - | +10…+30 °C | - | - | - | - | - | - | - | - | 0.8 W | - | 1 A | 100 | - | - | - | - | - | - | - | - | - | - | ||
| 2N1711 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRLR2905Anlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | - | - | 2 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | 42 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 175 °C | - | - | PLASTIC/EPOXY | DPAK-3 | RECTANGULAR | SMALL OUTLINE | Transferred | TO-252AA | - | - | No | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e0 | - | EAR99 | - | - | - | TIN LEAD | - | ULTRA-LOW RESISTANCE, AVALANCHE RATED, FAST SWITCHING | - | - | - | SINGLE | GULL WING | 240 | - | compliant | - | 30 | - | 3 | R-PSSO-G2 | Not Qualified | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | - | - | ENHANCEMENT MODE | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | - | - | TO-252AA | 0.03 Ω | 160 A | 55 V | 210 mJ | METAL-OXIDE SEMICONDUCTOR | 69 W | - | - | - | - | - | - | 1 | - | - | - | - | - | - | ||
| IRLR2905 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF1010EAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | contacts - iron | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | 75 A | - | - | - | 2.02 | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 175 °C | - | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | - | - | No | - | - | - | - | 46*32*22/4000 | - | - | - | - | - | - | - | - | - | e0 | No | EAR99 | for "Krona" battery (6F-22) | battery terminal block | - | Tin/Lead (Sn/Pb) | insulator - black | AVALANCHE RATED | 8541.29.00.95 | - | 12.7 mm | SINGLE | THROUGH-HOLE | 225 | - | compliant | - | 30 | - | 3 | R-PSFM-T3 | Not Qualified | - | - | flexible leads (pair), unterminated, 150 mm | - | SINGLE WITH BUILT-IN DIODE | - | - | 9 V | - | - | - | ENHANCEMENT MODE | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | - | - | TO-220AB | 0.012 Ω | 330 A | 60 V | 320 mJ | METAL-OXIDE SEMICONDUCTOR | 170 W | - | - | - | - | - | 170 W | - | - | - | - | - | - | - | ||
| IRF1010E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRLR3915Anlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 30A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | - | - | 2 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | 30 A | - | - | 6.17 | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 175 °C | - | - | PLASTIC/EPOXY | PLASTIC, DPAK-3 | RECTANGULAR | SMALL OUTLINE | Transferred | TO-252AA | - | - | No | - | - | - | - | 32.2*28.5*35.8/1000 | - | - | - | - | - | - | - | - | - | e0 | - | EAR99 | - | - | - | TIN LEAD | - | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | - | - | - | SINGLE | GULL WING | 240 | - | unknown | - | 30 | - | 3 | R-PSSO-G2 | Not Qualified | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | - | - | ENHANCEMENT MODE | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | - | - | TO-252AA | 0.014 Ω | 240 A | 55 V | 200 mJ | METAL-OXIDE SEMICONDUCTOR | 120 W | - | - | - | - | - | - | 1 | - | - | - | - | - | - | ||
| IRLR3915 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFR3711ZAnlielectronics Тип | International Rectifier |
Description: Power Field-Effect Transistor, 30A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | - | - | 2 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | 30 A | - | - | - | 1.70 | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 175 °C | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Transferred | TO-252AA | - | - | No | - | - | - | - | - | - | 28.5*21*19/2000 | - | - | - | - | - | - | - | e0 | - | EAR99 | - | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | SINGLE | GULL WING | 240 | - | compliant | - | 30 | - | 3 | R-PSSO-G2 | Not Qualified | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | - | - | ENHANCEMENT MODE | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | - | - | TO-252AA | 0.0057 Ω | 370 A | 20 V | 140 mJ | METAL-OXIDE SEMICONDUCTOR | 79 W | - | - | - | - | - | - | 1 | - | - | - | - | - | - | ||
| IRFR3711Z | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFR3704ZAnlielectronics Тип | Infineon Technologies AG |
Power Field-Effect Transistor, 30A I(D), 20V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | through hole | YES | - | - | - | - | 2 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | ± 30 ppm temperature characteristic (-20…+70 °C) | - | 30 A | - | - | - | 0.59 | INFINEON TECHNOLOGIES AG | - | max. ± 5 ppm/ year | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | miniature - US size | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | Yes | - | - | - | 42*28*18.5/5000 | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | HC49 Quartz Resonator | ESR max - 50 Ohm | - | - | - | - | 16 pF | - | SINGLE | GULL WING | NOT SPECIFIED | - | compliant | 6 MHz | NOT SPECIFIED | ± 20 (at T=25 °C) ppm | - | R-PSSO-G2 | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | 500 (at Uappl.dc=100 V) MOhm min | - | - | - | - | ENHANCEMENT MODE | DRAIN | SWITCHING | - | N-CHANNEL | - | - | -20…+70 °C | - | - | TO-252AA | 0.0084 Ω | 240 A | 20 V | 41 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | ||
| IRFR3704Z | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFR24N15DAnlielectronics Тип | Infineon Technologies AG |
Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | connector housing - PVC-45P | - | - | - | 2 | SILICON | 1 | - | - | - | - | - | 3 x 0.75 (42 strands x 0.15 mm) mm2 | - | - | - | - | - | - | - | 24 A | - | - | 330.00 | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | - | - | - | 250 V | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | PLASTIC, DPAK-3 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | No | - | - | - | - | 48*28*38/100 | - | - | - | - | - | - | - | - | - | e0 | - | EAR99 | IEC C14 (Male) - IEC C13 (Female) | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | SINGLE | GULL WING | 240 | - | not_compliant | - | 30 | - | - | R-PSSO-G2 | Not Qualified | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | - | - | ENHANCEMENT MODE | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | - | - | TO-252AA | 0.095 Ω | 96 A | 150 V | 170 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | 1 | - | - | sheath - 6.5 ... 6.8 mm | - | 5000 mm | - | ||
| IRFR24N15D | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFR18N15DAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 18A I(D), 150V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | stainless steel | - | - | - | 2 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | 18 A | - | - | 15.75 | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 175 °C | - | - | PLASTIC/EPOXY | PLASTIC, DPAK-3 | RECTANGULAR | SMALL OUTLINE | Transferred | TO-252AA | - | - | No | - | - | - | - | 42*28*23.5/400 | - | - | - | - | - | - | - | - | - | e0 | No | EAR99 | - | - | - | TIN LEAD | - | - | - | - | - | SINGLE | GULL WING | 240 | 140 mm | compliant | - | 30 | - | 3 | R-PSSO-G2 | Not Qualified | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | - | - | ENHANCEMENT MODE | DRAIN | SWITCHING | - | N-CHANNEL | tweezers | - | - | - | - | TO-252AA | 0.125 Ω | 72 A | 150 V | 200 mJ | METAL-OXIDE SEMICONDUCTOR | 110 W | - | - | - | - | - | - | 1 | - | - | - | - | - | 10 mm | ||
| IRFR18N15D | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF40R207Anlielectronics Тип | International Rectifier |
Power Field-Effect Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 44.2mm | - | - | - | - | - | - | - | 1500 (50Hz, 1 min.) V | - | - | - | 32.80 | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | 24.5mm | - | 5Amin | - | - | - | - | ≥10000 | - | - | - | - | - | - | - | , | - | - | Transferred | - | LED 12V | round/red | Yes | NO(NC)+NC(NO) | - | - | - | 42*28*23.5/160 | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | - | - | NOT SPECIFIED | 69mm | unknown | - | NOT SPECIFIED | - | - | - | - | - | - | - | ≤30mOhm | - | ≥1000 (at Uins.dc=500V) MOhm | - | - | - | - | - | - | - | - | - | - | - | -25…+85 °C | - | - | 125/250 (AC) V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRF40R207 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFP1405Anlielectronics Тип | International Rectifier |
Description: Power Field-Effect Transistor, 95A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | - | brass | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | RG-58; RG-59 | phosphor bronze | - | SMA flange socket | - | - | 95 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | PTFE | - | - | - | - | - | screw-on | - | - | - | - | - | - | - | - | 18 GHz | 175 °C | - | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-247AC | - | - | No | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e0 | - | EAR99 | - | - | - | TIN LEAD | - | AVALANCHE RATED, HIGH RELIABILITY | - | - | - | SINGLE | THROUGH-HOLE | - | - | compliant | - | - | - | 3 | R-PSFM-T3 | Not Qualified | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | 50 Ohm | - | - | ENHANCEMENT MODE | ISOLATED | SWITCHING | - | N-CHANNEL | - | - | -40 …+85 °C | - | - | TO-247AC | 0.0053 Ω | 640 A | 55 V | 530 mJ | METAL-OXIDE SEMICONDUCTOR | 310 W | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRFP1405 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFH8330TRPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 17A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | - | 0.43 | 5 | SILICON | 1 | - | - | max - 180 (short-term exposure) °C | - | - | - | - | - | - | - | - | - | - | 17 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-F5 | RECTANGULAR | SMALL OUTLINE | Transferred | QFN | - | - | Yes | - | - | - | - | 28.5*21*19/5000 | - | - | hold - 58°C | - | - | - | - | - | - | e3 | Yes | EAR99 | - | - | - | MATTE TIN | - | - | - | - | - | DUAL | FLAT | - | housing - 8 ± 0.5; with leads - 70 ± 3 mm | compliant | - | - | - | 8 | R-PDSO-F5 | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | - | - | ENHANCEMENT MODE | DRAIN | SWITCHING | thermo fuse in DIP package | N-CHANNEL | - | - | - | 3 A | - | - | 0.0066 Ω | 210 A | 30 V | 52 mJ | METAL-OXIDE SEMICONDUCTOR | 35 W | - | - | - | 250 (AC) V | - | - | 1 | - | - | lead - 0.6 mm | 2.6 ± 0.5 mm | - | 6.6 ± 0.5 mm | ||
| IRFH8330TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFH8325TRPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 21A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | - | 0.47 | 5 | SILICON | 1 | - | - | - | maximum - 180 (during brief exposure) °C | - | - | - | - | - | - | - | - | - | 21 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | 250 (AC) Vmin | - | - | - | - | - | - | 150 °C | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-F5 | RECTANGULAR | SMALL OUTLINE | Transferred | QFN | - | - | Yes | - | - | - | - | 48*45*19/20000 | - | - | holding - 85 °C | - | - | - | - | - | - | e3 | Yes | EAR99 | - | - | - | MATTE TIN | - | - | - | - | - | DUAL | FLAT | - | housing - 8 ± 0.5; with leads - 70 ± 3 mm | compliant | - | - | - | 8 | R-PDSO-F5 | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | - | - | ENHANCEMENT MODE | DRAIN | SWITCHING | thermo fuse in DIP package | N-CHANNEL | - | - | - | 3 A | - | - | 0.005 Ω | 100 A | 30 V | 94 mJ | METAL-OXIDE SEMICONDUCTOR | 54 W | - | - | - | - | - | - | 1 | - | - | lead - 0.6 mm | 2.6 ± 0.5 mm | - | 6.6 ± 0.5 mm | ||
| IRFH8325TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI7478DP-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 15A I(D), 60V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | - | YES | - | - | - | - | 5 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | 15 A | - | - | - | 0.80 | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | 3min | - | - | - | - | - | - | - | 150 °C | - | - | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | Yes | - | - | - | 40*40*35/500 | - | - | - | - | - | - | - | - | - | 0…+40 °C | e3 | - | EAR99 | - | - | - | Matte Tin (Sn) - annealed | - | - | - | - | - | DUAL | C BEND | 260 | - | compliant | - | 30 | - | - | R-XDSO-C5 | Not Qualified | - | 2 | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | - | - | ENHANCEMENT MODE | DRAIN | - | - | N-CHANNEL | - | - | - | - | - | - | 0.0075 Ω | 60 A | 60 V | 61 mJ | METAL-OXIDE SEMICONDUCTOR | 5.4 W | - | - | - | - | - | - | 1 | - | - | - | - | - | - | ||
| SI7478DP-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI7143DP-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 35A I(D), 30V, 0.01ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | YES | - | Nylon 66 UL94V-0 | - | - | 5 | SILICON | 1 | - | - | - | - | - | - | interboard power cable (socket) series 1007 | - | - | - | - | - | - | 35 A | - | - | - | 1.91 | VISHAY INTERTECHNOLOGY INC | - | - | W-02 pitch 2.54mm | - | - | - | - | - | - | - | - | - | - | 2 | - | - | 150 °C | - | - | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | Yes | - | - | - | - | 48*32*27/10000 | - | - | - | - | - | 0.129 mm2 | red, black | 280 mm | - | e3 | - | EAR99 | C3 | - | - | Matte Tin (Sn) | - | - | - | - | - | DUAL | C BEND | 260 | - | compliant | - | 30 | - | - | R-XDSO-C5 | - | 2 | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | - | - | ENHANCEMENT MODE | DRAIN | SWITCHING | - | P-CHANNEL | - | 0…+80 °C | - | - | - | - | 0.01 Ω | 60 A | 30 V | 31.25 mJ | METAL-OXIDE SEMICONDUCTOR | 35.7 W | - | - | - | - | 2.54 mm | - | 1 | - | - | - | - | - | - | ||
| SI7143DP-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFH5210TRPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 10A I(D), 100V, 0.0149ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | - | - | 5 | SILICON | 1 | - | (max) - 250 mA | - | - | - | - | - | - | - | - | - | - | - | 10 A | - | - | 90.83 | - | INTERNATIONAL RECTIFIER CORP | - | - | - | 4.2 V | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-N5 | RECTANGULAR | SMALL OUTLINE | Transferred | QFN | - | - | Yes | - | - | - | - | 40*40*34/100 | - | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | 1x18650 charger | - | MATTE TIN | - | - | - | - | - | DUAL | NO LEAD | - | - | compliant | - | - | - | 8 | R-PDSO-N5 | Not Qualified | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | battery charging current (max) - 1000 mA | 0.7 m | ENHANCEMENT MODE | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | - | - | - | 0.0149 Ω | 220 A | 100 V | 86 mJ | METAL-OXIDE SEMICONDUCTOR | 104 W | - | - | - | - | - | - | 1 | 110-240 (AC), 50 Hz V | Li-ion 18650, 3.7v (18x65mm) | - | - | - | - | ||
| IRFH5210TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSIR422DP-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 20.5A I(D), 40V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | - | - | 5 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | 20.5 A | - | - | 4.00 | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | Yes | - | - | - | - | 37*39*57.5/1000 | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | - | - | Matte Tin (Sn) | - | - | - | - | - | DUAL | C BEND | 260 | - | not_compliant | - | 30 | - | - | R-XDSO-C5 | Not Qualified | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | - | - | ENHANCEMENT MODE | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | - | - | - | 0.0066 Ω | 70 A | 40 V | 45 mJ | METAL-OXIDE SEMICONDUCTOR | 34.7 W | - | - | - | - | - | - | 1 | - | - | - | - | - | - | ||
| SIR422DP-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI7489DP-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 28A I(D), 100V, 0.041ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK SO-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks, 1 Day | - | YES | brush - graphite; conductor - copper; clamp - brass | - | - | - | 8 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | 28 A | - | - | 5.26 | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | -55 °C | - | PLASTIC/EPOXY | POWERPAK SO-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | Yes | - | - | - | - | 41*29*36/1000 | - | - | - | 315 ns | 55 ns | - | - | (L) - mm | - | e3 | - | EAR99 | - | graphite brush for collector motor with spring | - | Matte Tin (Sn) - annealed | - | - | - | - | - | DUAL | FLAT | 260 | (D) - 17 mm | compliant | - | 30 | - | - | R-PDSO-F8 | Not Qualified | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | - | - | ENHANCEMENT MODE | DRAIN | SWITCHING | - | P-CHANNEL | - | - | - | - | - | - | 0.041 Ω | 40 A | 100 V | 61 mJ | METAL-OXIDE SEMICONDUCTOR | 83 W | - | - | - | - | - | - | 1 | - | - | - | (H) - 8 mm | - | (W) - 14.4 mm | ||
| SI7489DP-T1-GE3 |
Индекс :
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