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Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Surface Mount Material Number of Terminals Transistor Element Material Exterior Housing Material Colour Date Of Intro Drain Current-Max (ID) Gross weight Heatsink shape Ihs Manufacturer Material finishing Mounting Operating Temperature-Max Operating Temperature-Min Package Body Material Package Description Package Shape Package Style Part Life Cycle Code Part Package Code Plate thickness Rohs Code Thermal resistance @200 LFM Turn-off Time-Max (toff) Turn-on Time-Max (ton) Type of heatsink JESD-609 Code Pbfree Code ECCN Code Terminal Finish Additional Feature HTS Code Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Time@Peak Reflow Temperature-Max (s) Pin Count Reference Standard JESD-30 Code Qualification Status Configuration Operating Mode Case Connection Transistor Application Polarity/Channel Type JEDEC-95 Code Drain-source On Resistance-Max Pulsed Drain Current-Max (IDM) DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology Power Dissipation-Max (Abs) Feedback Cap-Max (Crss) Power Dissipation Ambient-Max Saturation Current Thermal resistance Height Length Width
Vishay Intertechnologies SQ2389ES-T1_GE3
Mfr. Тип
SQ2389ES-T1_GE3
Anlielectronics Тип

Vishay Intertechnologies
Small Signal Field-Effect Transistor, 4.1A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 - - - - - - - - - - - VISHAY INTERTECHNOLOGY INC - - - - - SMALL OUTLINE, R-PDSO-G3 - - End Of Life - - Yes - - - - - - EAR99 - - - - - NOT SPECIFIED unknown NOT SPECIFIED - - - - - - - - - - - - - - - - - - - - - - -
    SQ2389ES-T1_GE3
    SQ2389ES-T1_GE3

    Vishay Intertechnologies
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    International Rectifier IRFR12N25DTRRPBF
    Mfr. Тип
    IRFR12N25DTRRPBF
    Anlielectronics Тип

    		International Rectifier
    Description: Power Field-Effect Transistor, 14A I(D), 250V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - YES - 2 SILICON 1 - - 14 A - - INTERNATIONAL RECTIFIER CORP - - 150 °C - PLASTIC/EPOXY SMALL OUTLINE, R-PSSO-G2 RECTANGULAR SMALL OUTLINE Obsolete TO-252AA - Yes - - - - e3 Yes EAR99 MATTE TIN OVER NICKEL - - SINGLE GULL WING - compliant - 3 - R-PSSO-G2 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE DRAIN SWITCHING N-CHANNEL TO-252AA 0.26 Ω 56 A 250 V 250 mJ METAL-OXIDE SEMICONDUCTOR - - - 1 - - - -
      IRFR12N25DTRRPBF
      IRFR12N25DTRRPBF

      International Rectifier
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Vishay Intertechnologies SI2337DS-T1-GE3
      Mfr. Тип
      SI2337DS-T1-GE3
      Anlielectronics Тип

      		Vishay Intertechnologies
      Small Signal Field-Effect Transistor, 0.0012A I(D), 80V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 18 Weeks, 3 Days YES - 3 SILICON 1 - - 0.0012 A - - VISHAY INTERTECHNOLOGY INC - - 150 °C - PLASTIC/EPOXY HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 RECTANGULAR SMALL OUTLINE Active - - Yes - - - - e3 - EAR99 MATTE TIN - - DUAL GULL WING 260 compliant 30 - - R-PDSO-G3 Not Qualified SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE ENHANCEMENT MODE - - P-CHANNEL TO-236 0.27 Ω - 80 V - METAL-OXIDE SEMICONDUCTOR 2.5 W - - 1 - - - -
        SI2337DS-T1-GE3
        SI2337DS-T1-GE3

        Vishay Intertechnologies
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Rochester Electronics LLC IRFD210
        Mfr. Тип
        IRFD210
        Anlielectronics Тип

        		Rochester Electronics LLC
        Description: 600mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 - NO - 3 SILICON 1 - - 0.6 A - - ROCHESTER ELECTRONICS LLC - - - - PLASTIC/EPOXY - RECTANGULAR IN-LINE Active - - - - - - - - - - - - - DUAL THROUGH-HOLE - unknown - - - R-PDIP-T3 COMMERCIAL SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE DRAIN SWITCHING N-CHANNEL - 1.5 Ω - 200 V - METAL-OXIDE SEMICONDUCTOR - - - - - - - -
          IRFD210
          IRFD210

          Rochester Electronics LLC
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          International Rectifier IRF9952TRPBF
          Mfr. Тип
          IRF9952TRPBF
          Anlielectronics Тип

          		International Rectifier
          Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET,
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 - YES - 8 SILICON 2 - - 3.5 A - - INTERNATIONAL RECTIFIER CORP - - 150 °C - PLASTIC/EPOXY - RECTANGULAR SMALL OUTLINE Transferred - - Yes - - - - e3 Yes EAR99 MATTE TIN HIGH RELIABILITY - DUAL GULL WING 260 unknown 30 - - R-PDSO-G8 Not Qualified SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE ENHANCEMENT MODE - SWITCHING N-CHANNEL AND P-CHANNEL - 0.1 Ω 16 A 30 V 44 mJ METAL-OXIDE SEMICONDUCTOR 2 W - - 1 - - - -
            IRF9952TRPBF
            IRF9952TRPBF

            International Rectifier
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Vishay Intertechnologies SI6968BEDQ-T1-E3
            Mfr. Тип
            SI6968BEDQ-T1-E3
            Anlielectronics Тип

            		Vishay Intertechnologies
            Description: Small Signal Field-Effect Transistor, 5.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 - YES - 8 SILICON 2 - - 5.2 A - - VISHAY INTERTECHNOLOGY INC - - 150 °C - PLASTIC/EPOXY TSSOP-8 RECTANGULAR SMALL OUTLINE Active - - Yes - - - - e3 - EAR99 MATTE TIN - - DUAL GULL WING 260 compliant 30 - - R-PDSO-G8 Not Qualified COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR ENHANCEMENT MODE - - N-CHANNEL - 0.022 Ω - 20 V - METAL-OXIDE SEMICONDUCTOR 1 W - - 1 - - - -
              SI6968BEDQ-T1-E3
              SI6968BEDQ-T1-E3

              Vishay Intertechnologies
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Vishay Intertechnologies SQJ479EP-T1_GE3
              Mfr. Тип
              SQJ479EP-T1_GE3
              Anlielectronics Тип

              		Vishay Intertechnologies
              Power Field-Effect Transistor,
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 16 Weeks, 3 Days YES - 4 SILICON 1 - 2016-07-19 32 A - - VISHAY INTERTECHNOLOGY INC - - - - PLASTIC/EPOXY SMALL OUTLINE, R-PSSO-G4 RECTANGULAR SMALL OUTLINE Active - - Yes - - - - e3 - EAR99 MATTE TIN - - SINGLE GULL WING 260 unknown - - AEC-Q101 R-PSSO-G4 - SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE DRAIN - P-CHANNEL - 0.033 Ω 100 A 80 V 80 mJ METAL-OXIDE SEMICONDUCTOR - - - 1 - - - -
                SQJ479EP-T1_GE3
                SQJ479EP-T1_GE3

                Vishay Intertechnologies
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                International Rectifier IRL3705NPBF
                Mfr. Тип
                IRL3705NPBF
                Anlielectronics Тип

                		International Rectifier
                Description: Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - NO - 3 SILICON 1 - - 89 A - - INTERNATIONAL RECTIFIER CORP - - 175 °C - PLASTIC/EPOXY LEAD FREE PACKAGE-3 RECTANGULAR FLANGE MOUNT Transferred TO-220AB - Yes - - - - e3 Yes EAR99 MATTE TIN OVER NICKEL AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY 8541.29.00.95 SINGLE THROUGH-HOLE 250 unknown 30 3 - R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE DRAIN SWITCHING N-CHANNEL TO-220AB 0.012 Ω 310 A 55 V 340 mJ METAL-OXIDE SEMICONDUCTOR 130 W - 170 W - - - - -
                  IRL3705NPBF
                  IRL3705NPBF

                  International Rectifier
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Vishay Intertechnologies SI7611DN-T1-GE3
                  Mfr. Тип
                  SI7611DN-T1-GE3
                  Anlielectronics Тип

                  		Vishay Intertechnologies
                  Description: Power Field-Effect Transistor, 9.3A I(D), 40V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 - YES - 5 SILICON 1 - - 9.3 A - - VISHAY INTERTECHNOLOGY INC - - 150 °C - UNSPECIFIED HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 SQUARE SMALL OUTLINE Active - - Yes - - - - e3 - EAR99 Matte Tin (Sn) - - DUAL C BEND 260 compliant 30 - - S-XDSO-C5 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE DRAIN SWITCHING P-CHANNEL - 0.025 Ω 20 A 40 V 26 mJ METAL-OXIDE SEMICONDUCTOR 39 W - - 1 - - - -
                    SI7611DN-T1-GE3
                    SI7611DN-T1-GE3

                    Vishay Intertechnologies
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Vishay Intertechnologies SIHP12N60E-GE3
                    Mfr. Тип
                    SIHP12N60E-GE3
                    Anlielectronics Тип

                    		Vishay Intertechnologies
                    Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 - NO - 3 SILICON 1 - - 12 A - - VISHAY INTERTECHNOLOGY INC - - 150 °C - PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Active - - Yes - - - - - - EAR99 - - - SINGLE THROUGH-HOLE NOT SPECIFIED compliant NOT SPECIFIED - - R-PSFM-T3 - SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - SWITCHING N-CHANNEL TO-220AB 0.38 Ω 27 A 600 V 117 mJ METAL-OXIDE SEMICONDUCTOR 147 W - - - - - - -
                      SIHP12N60E-GE3
                      SIHP12N60E-GE3

                      Vishay Intertechnologies
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Nexperia PSMN1R0-30YLD
                      Mfr. Тип
                      PSMN1R0-30YLD
                      Anlielectronics Тип

                      		Nexperia
                      Power Field-Effect Transistor
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 - YES - 4 SILICON 1 - 2017-02-17 100 A - - NEXPERIA - - - - PLASTIC/EPOXY SOP-8, 4 PIN RECTANGULAR SMALL OUTLINE Active - - Yes - - - - e3 - EAR99 Tin (Sn) HIGH RELIABILITY - SINGLE GULL WING 260 not_compliant NOT SPECIFIED - IEC-60134 R-PSSO-G4 - SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE DRAIN SWITCHING N-CHANNEL MO-235 0.0013 Ω 1441 A 30 V 1588 mJ METAL-OXIDE SEMICONDUCTOR - - - 1 - - - -
                        PSMN1R0-30YLD
                        PSMN1R0-30YLD

                        Nexperia
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Vishay Intertechnologies SQ3427AEEV-T1_GE3
                        Mfr. Тип
                        SQ3427AEEV-T1_GE3
                        Anlielectronics Тип

                        		Vishay Intertechnologies
                        Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 16 Weeks, 3 Days - - - - - - 2016-05-02 - - - VISHAY INTERTECHNOLOGY INC - - - - - MO-193C, TSOP-6 - - Active - - Yes - - - - e3 - EAR99 Matte Tin (Sn) - - - - - unknown - - - - - - - - - - - - - - - - - - - 1 - - - -
                          SQ3427AEEV-T1_GE3
                          SQ3427AEEV-T1_GE3

                          Vishay Intertechnologies
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          International Rectifier IRFB3306GPBF
                          Mfr. Тип
                          IRFB3306GPBF
                          Anlielectronics Тип

                          		International Rectifier
                          Description: Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 - NO - 3 SILICON 1 - - 120 A - - INTERNATIONAL RECTIFIER CORP - - 175 °C - PLASTIC/EPOXY HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 RECTANGULAR FLANGE MOUNT Transferred TO-220AB - Yes - - - - e3 Yes EAR99 MATTE TIN OVER NICKEL - - SINGLE THROUGH-HOLE - unknown - 3 - R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE DRAIN SWITCHING N-CHANNEL TO-220AB 0.0042 Ω 620 A 60 V 184 mJ METAL-OXIDE SEMICONDUCTOR 230 W - - - - - - -
                            IRFB3306GPBF
                            IRFB3306GPBF

                            International Rectifier
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Samsung Semiconductor SSP1N60A
                            Mfr. Тип
                            SSP1N60A
                            Anlielectronics Тип

                            		Samsung Semiconductor
                            Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - NO - 3 SILICON 1 - - 1 A - - SAMSUNG SEMICONDUCTOR INC - - 150 °C - PLASTIC/EPOXY TO-220, 3 PIN RECTANGULAR FLANGE MOUNT Transferred TO-220AB - - - - - - - - EAR99 - - - SINGLE THROUGH-HOLE - unknown - 3 - R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - - N-CHANNEL TO-220AB 12 Ω 3 A 600 V 44 mJ METAL-OXIDE SEMICONDUCTOR 34 W - - - - - - -
                              SSP1N60A
                              SSP1N60A

                              Samsung Semiconductor
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              International Rectifier IRFB4227PBF
                              Mfr. Тип
                              IRFB4227PBF
                              Anlielectronics Тип

                              		International Rectifier
                              Power Field-Effect Transistor, 65A I(D), 200V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 - NO - 3 SILICON 1 - - 65 A - - INTERNATIONAL RECTIFIER CORP - - 175 °C - PLASTIC/EPOXY LEAD FREE PACKAGE-3 RECTANGULAR FLANGE MOUNT Transferred TO-220AB - Yes - - - - e3 Yes EAR99 MATTE TIN OVER NICKEL - - SINGLE THROUGH-HOLE - compliant - 3 - R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE DRAIN SWITCHING N-CHANNEL TO-220AB 0.024 Ω 260 A 200 V 140 mJ METAL-OXIDE SEMICONDUCTOR 330 W - - - - - - -
                                IRFB4227PBF
                                IRFB4227PBF

                                International Rectifier
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                International Rectifier IRFU4615PBF
                                Mfr. Тип
                                IRFU4615PBF
                                Anlielectronics Тип

                                		International Rectifier
                                Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, IPAK-3
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - NO - 3 SILICON 1 - - 33 A - - INTERNATIONAL RECTIFIER CORP - - 175 °C - PLASTIC/EPOXY ROHS COMPLIANT, IPAK-3 RECTANGULAR IN-LINE Transferred TO-251AA - Yes - - - - e3 Yes EAR99 Matte Tin (Sn) - with Nickel (Ni) barrier - - SINGLE THROUGH-HOLE 260 not_compliant 30 3 - R-PSIP-T3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE DRAIN SWITCHING N-CHANNEL TO-251AA 0.042 Ω 140 A 150 V 109 mJ METAL-OXIDE SEMICONDUCTOR 144 W - - 1 - - - -
                                  IRFU4615PBF
                                  IRFU4615PBF

                                  International Rectifier
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Zowie Technology Corp MMBT3904W
                                  Mfr. Тип
                                  MMBT3904W
                                  Anlielectronics Тип

                                  		Zowie Technology Corp
                                  Transistor
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - - - - - - - - - - - ZOWIE TECHNOLOGY CORP - - - - - - - - Contact Manufacturer - - - - - - - - - EAR99 - - - - - - unknown - - - - - - - - - - - - - - - - - - - - - - - -
                                    MMBT3904W
                                    MMBT3904W

                                    Zowie Technology Corp
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Vishay Intertechnologies SI7288DP-T1-GE3
                                    Mfr. Тип
                                    SI7288DP-T1-GE3
                                    Anlielectronics Тип

                                    		Vishay Intertechnologies
                                    Power Field-Effect Transistor, 10A I(D), 40V, 0.019ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 - YES aluminium 6 SILICON 2 black - 10 A 7.79 g grilled VISHAY INTERTECHNOLOGY INC anodized retaining spring 150 °C - UNSPECIFIED HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 RECTANGULAR SMALL OUTLINE Active - 2mm Yes 6.3°C/W - - extruded e3 - EAR99 Matte Tin (Sn) - - DUAL C BEND 260 not_compliant 40 - - R-XDSO-C6 Not Qualified SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE ENHANCEMENT MODE DRAIN SWITCHING N-CHANNEL - 0.019 Ω 50 A 40 V 5 mJ METAL-OXIDE SEMICONDUCTOR 15.6 W - - 1 max. 20.8°C/W 9mm 35.6mm 35.6mm
                                      SI7288DP-T1-GE3
                                      SI7288DP-T1-GE3

                                      Vishay Intertechnologies
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      Vishay Intertechnologies SQ2318AES-T1_GE3
                                      Mfr. Тип
                                      SQ2318AES-T1_GE3
                                      Anlielectronics Тип

                                      		Vishay Intertechnologies
                                      Small Signal Field-Effect Transistor, 8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 16 Weeks, 3 Days YES - 3 SILICON 1 - - 8 A - - VISHAY INTERTECHNOLOGY INC - - 175 °C -55 °C PLASTIC/EPOXY SMALL OUTLINE, R-PDSO-G3 RECTANGULAR SMALL OUTLINE End Of Life - - Yes - 26.5 ns 24 ns - e3 - EAR99 Matte Tin (Sn) - - DUAL GULL WING 260 compliant 10 - - R-PDSO-G3 - SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - - N-CHANNEL TO-236AB 0.031 Ω 32 A 40 V 8 mJ METAL-OXIDE SEMICONDUCTOR - 46 pF - 1 - - - -
                                        SQ2318AES-T1_GE3
                                        SQ2318AES-T1_GE3

                                        Vishay Intertechnologies
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        Vishay Intertechnologies SIR466DP-T1-GE3
                                        Mfr. Тип
                                        SIR466DP-T1-GE3
                                        Anlielectronics Тип

                                        		Vishay Intertechnologies
                                        Power Field-Effect Transistor, 28A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 - YES - 5 SILICON 1 - - 28 A - - VISHAY INTERTECHNOLOGY INC - - 150 °C - UNSPECIFIED HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 RECTANGULAR SMALL OUTLINE Active - - Yes - - - - e3 - EAR99 MATTE TIN - - DUAL C BEND - compliant - - - R-XDSO-C5 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE DRAIN SWITCHING N-CHANNEL - 0.0035 Ω 70 A 30 V 45 mJ METAL-OXIDE SEMICONDUCTOR 54 W - - 1 - - - -
                                          SIR466DP-T1-GE3
                                          SIR466DP-T1-GE3

                                          Vishay Intertechnologies
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - Special Purpose definition: Transistors - Special Purpose Product Listing: SQ2389ES-T1_GE3,IRFR12N25DTRRPBF,SI2337DS-T1-GE3,IRFD210,IRF9952TRPBF.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - Special Purpose has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.