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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Surface Mount | Material | Number of Terminals | Transistor Element Material | Exterior Housing Material | Capacitors series | Case - inch | Case - mm | Contact material | Diameter coverage | Diameter of coverage | Drain Current-Max (ID) | Gross weight | Ihs Manufacturer | Kind of capacitor | Maximum current | Moisture Sensitivity Levels | Mounting | Nominal voltage | Number of Elements | Number of terals | Operating ambient temperature | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Purpose | Rohs Code | Transport packaging size/quantity | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Type of capacitor | Wire cross-section | Operating temperature | Packaging | Tolerance | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Color | Additional Feature | Capacitance | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Dielectric | Configuration | Note | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | Operating temperature range | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Feedback Cap-Max (Crss) | Saturation Current | Operating voltage | Width |
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  | Mfr. ТипBUK9Y41-80EAnlielectronics Тип | NXP Semiconductors |
24A, 80V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, POWER, SOP-8, LFPAK56-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 4 | SILICON | - | - | - | - | - | - | - | 24 A | - | NXP SEMICONDUCTORS | - | - | 1 | - | - | 1 | - | - | - | - | PLASTIC/EPOXY | PLASTIC, POWER, SOP-8, LFPAK56-4 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | Yes | - | - | - | - | - | - | - | - | - | - | EAR99 | - | PURE TIN | - | AVALANCHE RATED | - | SINGLE | GULL WING | - | unknown | - | - | AEC-Q101; IEC-60134 | R-PSSO-G4 | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | MO-235 | 0.045 Ω | 96 A | 80 V | 25 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | ||
| BUK9Y41-80E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF7455TRAnlielectronics Тип | Infineon Technologies AG |
Description: Power Field-Effect Transistor, 15A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 8 | SILICON | - | - | - | - | - | - | - | 15 A | - | INFINEON TECHNOLOGIES AG | - | - | 2 | - | - | 1 | - | - | - | - | PLASTIC/EPOXY | SO-8 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | Yes | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | MATTE TIN | - | AVALANCHE RATED | - | DUAL | GULL WING | - | compliant | - | - | - | R-PDSO-G8 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | MS-012AA | 0.0075 Ω | 120 A | 30 V | 200 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | ||
| IRF7455TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBUK9Y153-100EAnlielectronics Тип | Nexperia |
Power Field-Effect Transistor, 9.4A I(D), 100V, 0.153ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 4 | SILICON | 1 | - | - | - | - | - | - | 9.4 A | - | NEXPERIA | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G4 | RECTANGULAR | SMALL OUTLINE | Active | - | - | Yes | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | TIN | - | AVALANCHE RATED | - | SINGLE | GULL WING | 260 | not_compliant | 30 | - | AEC-Q101; IEC-60134 | R-PSSO-G4 | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | MO-235 | 0.153 Ω | 38 A | 100 V | 9.5 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | 1 | - | - | ||
| BUK9Y153-100E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI7956DP-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 2.6A I(D), 150V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | YES | thermoplastic | 6 | SILICON | 2 | - | - | - | electrical steel | - | - | 2.6 A | 6.85 | VISHAY INTERTECHNOLOGY INC | - | 16 A | - | - | 450 V | - | 2min | - | 150 °C | - | UNSPECIFIED | ROHS COMPLIANT, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | Connecting and branching copper conductors | Yes | 42*28*23.5/1000 | - | - | - | 0.5...2.5 (20...14AWG) mm2 | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) | white | - | - | DUAL | C BEND | 260 | compliant | 30 | - | - | R-XDSO-C6 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | -60…+40 °C | - | 0.105 Ω | - | 150 V | - | METAL-OXIDE SEMICONDUCTOR | 3.5 W | - | 1 | - | - | ||
| SI7956DP-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF9620PBFAnlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 19 Weeks, 1 Day | NO | polyester, self-extinguishing | 3 | SILICON | 1 | - | - | - | - | - | 32 (+3) mm | 3.5 A | 92.00 | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | -55...+150 °C | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | TO-220AB | - | Yes | 59.5*57*62/100 | - | - | - | - | - | coil - 50m | - | e3 | Yes | EAR99 | self-wrapping cable sleeve | Matte Tin (Sn) | black | - | - | SINGLE | THROUGH-HOLE | 260 | compliant | 30 | 3 | - | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | reusable | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | TO-220AB | 1.5 Ω | 14 A | 200 V | - | METAL-OXIDE SEMICONDUCTOR | 40 W | - | - | - | 150 ±8 mm | ||
| IRF9620PBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFR1N60ATRPBFAnlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | YES | polyester, self-extinguishing | 2 | SILICON | 1 | KGF | 0603 | 1608 | - | 5 (+3) mm | - | 1.4 A | 0.032 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | - | SMD | - | - | - | -55...+150 °C | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Active | TO-252AA | - | Yes | 102*20*20/500 | - | - | ceramic | - | -55...125°C | spool - 100m | ±5% | e3 | Yes | EAR99 | self-wrapping cable sleeve | Matte Tin (Sn) | black | - | 5.6nF | SINGLE | GULL WING | 260 | not_compliant | 30 | 3 | - | R-PSSO-G2 | Not Qualified | X7R | SINGLE WITH BUILT-IN DIODE | reusable | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | TO-252AA | 7 Ω | 5.6 A | 600 V | 93 mJ | METAL-OXIDE SEMICONDUCTOR | 36 W | - | 1 | 100V | 30 ±2 mm | ||
| IRFR1N60ATRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF9410PBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 8 | SILICON | 1 | KGM | 0201 | 0603 | - | - | - | 7 A | 0.009 g | INTERNATIONAL RECTIFIER CORP | MLCC | - | - | SMD | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | SO-8 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | - | Yes | - | - | - | ceramic | - | -55...125°C | - | ±2% | e3 | Yes | EAR99 | - | MATTE TIN | - | HIGH RELIABILITY | 22pF | DUAL | GULL WING | 260 | unknown | 30 | 8 | - | R-PDSO-G8 | Not Qualified | C0G (NP0) | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | MS-012AA | 0.03 Ω | 37 A | 30 V | 70 mJ | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | 1 | 25V | - | ||
| IRF9410PBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипTK20S06K3LAnlielectronics Тип | Toshiba America Electronic Components |
TRANSISTOR POWER, FET, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 2 | SILICON | 1 | KAS | 0805 | 2012 | - | - | - | 20 A | 0.026 g | TOSHIBA CORP | MLCC | - | - | SMD | - | - | - | - | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | ceramic | - | -55...125°C | - | ±10% | - | - | EAR99 | - | - | - | - | 1nF | SINGLE | GULL WING | - | unknown | - | - | AEC-Q101 | R-PSSO-G2 | - | X7R | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | - | 0.04 Ω | 40 A | 60 V | 17 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | 100V | - | ||
| TK20S06K3L | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSUM90N10-8M2P-E3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 90A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, ROHS COMPLIANT PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 2 | SILICON | 1 | KAM | 1812 | 4532 | - | - | - | 90 A | 0.028 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | - | SMD | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | ROHS COMPLIANT PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Active | - | - | Yes | - | - | - | ceramic | - | -55...125°C | - | ±10% | e3 | - | EAR99 | - | MATTE TIN | - | - | 1µF | SINGLE | GULL WING | 260 | not_compliant | 30 | - | - | R-PSSO-G2 | Not Qualified | X7R | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | TO-263 | 0.0082 Ω | 240 A | 100 V | 180 mJ | METAL-OXIDE SEMICONDUCTOR | 300 W | - | 1 | 50V | - | ||
| SUM90N10-8M2P-E3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI4164DY-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Small Signal Field-Effect Transistor, 30A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 8 | SILICON | 1 | - | - | - | - | - | - | 30 A | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | Yes | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) | - | - | - | DUAL | GULL WING | 260 | not_compliant | 30 | - | - | R-PDSO-G8 | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | MS-012AA | 0.0032 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 6 W | - | 1 | - | - | ||
| SI4164DY-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF8714TRPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 14A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 8 | SILICON | 1 | - | - | - | - | - | - | 14 A | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | LEAD FREE, SOP-8 | RECTANGULAR | SMALL OUTLINE | Transferred | SOT | - | Yes | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN | - | - | - | DUAL | GULL WING | - | compliant | - | 8 | - | R-PDSO-G8 | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | - | 0.0087 Ω | 110 A | 30 V | 65 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | ||
| IRF8714TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPSMN2R0-30YLAnlielectronics Тип | NXP Semiconductors |
Description: TRANSISTOR 100 A, 30 V, 0.00263 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 4 | SILICON | 1 | KAM | 1206 | 3216 | - | - | - | 100 A | 0.469 g | NXP SEMICONDUCTORS | MLCC | - | - | SMD | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | PLASTIC, LFPAK-4 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | Yes | - | - | - | ceramic | - | -55...125°C | - | ±10% | e3 | Yes | EAR99 | - | Tin (Sn) | - | - | 0.47µF | SINGLE | GULL WING | 260 | not_compliant | 30 | 235 | - | R-PSSO-G4 | Not Qualified | X7R | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | MO-235 | 0.00263 Ω | 667 A | 30 V | 151 mJ | METAL-OXIDE SEMICONDUCTOR | 97 W | - | 1 | 50V | - | ||
| PSMN2R0-30YL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF830APBFAnlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 9 Weeks, 3 Days | NO | - | 3 | SILICON | 1 | KAM | 1206 | 3216 | - | - | - | 5 A | 0.026 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | - | SMD | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | TO-220AB | - | Yes | - | - | - | ceramic | - | -55...125°C | - | ±10% | e3 | Yes | EAR99 | - | MATTE TIN | - | - | 10µF | SINGLE | THROUGH-HOLE | 260 | not_compliant | 30 | 3 | - | R-PSFM-T3 | Not Qualified | X7R | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | TO-220AB | 1.4 Ω | 20 A | 500 V | 230 mJ | METAL-OXIDE SEMICONDUCTOR | 74 W | 4.3 pF | - | 16V | - | ||
| IRF830APBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSUM60020E-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | YES | - | 2 | SILICON | 1 | KAM | 1206 | 3216 | - | - | - | 150 A | 0.026 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | - | SMD | - | - | - | - | 175 °C | -55 °C | PLASTIC/EPOXY | , | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | 130 ns | 86 ns | ceramic | - | -55...150°C | - | ±10% | - | - | EAR99 | - | - | - | - | 0.33µF | SINGLE | GULL WING | - | unknown | - | - | - | R-PSSO-G2 | - | X8L | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | TO-263AB | 0.0021 Ω | 500 A | 80 V | 180 mJ | METAL-OXIDE SEMICONDUCTOR | 375 W | 50 pF | - | 100V | - | ||
| SUM60020E-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF9Z14PBFAnlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 17 Weeks, 3 Days | NO | - | 3 | SILICON | 1 | KAM | 1206 | 3216 | - | - | - | 6.7 A | 0.055 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | - | SMD | - | - | - | - | 175 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | TO-220AB | - | Yes | - | - | - | ceramic | - | -55...125°C | - | ±20% | e3 | Yes | EAR99 | - | Matte Tin (Sn) | - | - | 1nF | SINGLE | THROUGH-HOLE | 260 | compliant | 30 | 3 | - | R-PSFM-T3 | Not Qualified | X7R | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | TO-220AB | 0.5 Ω | 27 A | 60 V | 140 mJ | METAL-OXIDE SEMICONDUCTOR | 43 W | 31 pF | - | 200V | - | ||
| IRF9Z14PBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI7850DP-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 6.2A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 17 Weeks, 3 Days | YES | - | 8 | SILICON | 1 | KAM | 1206 | 3216 | - | - | - | 6.2 A | 0.026 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | - | SMD | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | POWERPAK, SO-8 | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | - | Yes | - | 74 ns | 40 ns | ceramic | - | -55...125°C | - | ±10% | e3 | - | EAR99 | - | Matte Tin (Sn) | - | - | 1µF | DUAL | FLAT | 260 | compliant | 30 | - | - | R-PDSO-F8 | Not Qualified | X7R | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | - | 0.022 Ω | 40 A | 60 V | 11 mJ | METAL-OXIDE SEMICONDUCTOR | 1.8 W | - | 1 | 50V | - | ||
| SI7850DP-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRLML2246TRPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 2.6A I(D), 20V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 3 | SILICON | 1 | - | - | - | - | - | - | 2.6 A | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, MICRO-3 | RECTANGULAR | SMALL OUTLINE | Transferred | SOT-23 | - | Yes | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | Matte Tin (Sn) | - | - | - | DUAL | GULL WING | NOT SPECIFIED | compliant | NOT SPECIFIED | 3 | - | R-PDSO-G3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | TO-236AB | 0.135 Ω | 11 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 1.3 W | - | 1 | - | - | ||
| IRLML2246TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF740ALPBFAnlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | NO | - | 3 | SILICON | 1 | - | - | - | - | - | - | 10 A | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Active | TO-262AA | - | Yes | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN | - | - | - | SINGLE | THROUGH-HOLE | 260 | compliant | 30 | 3 | - | R-PSIP-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | TO-262AA | 0.55 Ω | 40 A | 400 V | 630 mJ | METAL-OXIDE SEMICONDUCTOR | 125 W | - | - | - | - | ||
| IRF740ALPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI7820DN-T1-E3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 1.7A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1212-8, POWERPAK-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 5 | SILICON | 1 | - | - | - | - | - | - | 1.7 A | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | 150 °C | - | UNSPECIFIED | ROHS COMPLIANT, 1212-8, POWERPAK-8 | SQUARE | SMALL OUTLINE | Active | - | - | Yes | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) - annealed | - | - | - | DUAL | C BEND | 260 | compliant | 30 | - | - | S-XDSO-C5 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | - | 0.24 Ω | 10 A | 200 V | 0.6 mJ | METAL-OXIDE SEMICONDUCTOR | 3.8 W | - | 1 | - | - | ||
| SI7820DN-T1-E3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI4850EY-T1-E3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 8 | SILICON | 1 | KAM | 0805 | 2012 | - | - | - | 6 A | 0.034 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | - | SMD | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | ROHS COMPLIANT, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | Yes | - | - | - | ceramic | - | -55...125°C | - | ±5% | e3 | - | EAR99 | - | MATTE TIN | - | - | 820pF | DUAL | GULL WING | 260 | compliant | 30 | - | - | R-PDSO-G8 | Not Qualified | C0G (NP0) | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | - | 0.022 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 3.3 W | - | 1 | 100V | - | ||
| SI4850EY-T1-E3 |
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