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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Surface Mount | Housing material | Weight | Number of Terminals | Transistor Element Material | Exterior Housing Material | Completeness | Date Of Intro | Dielectric strength | Drain Current-Max (ID) | Gross weight | Gross Weight | Ihs Manufacturer | Installation hole size | Maximum voltage | Measurement range | Moisture Sensitivity Levels | Noal current | Number of Elements | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Switching scheme | Transition Frequency-Nom (fT) | Transport packaging size/quantity | Trip temperature | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Working temperature range | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Color | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Lead length | Configuration | Insulation resistance | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | Operating temperature range | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Feedback Cap-Max (Crss) | Highest Frequency Band | Power Dissipation Ambient-Max | Saturation Current | Power Gain-Min (Gp) | Diameter | Height | Width |
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  | Mfr. ТипNE25139U74Anlielectronics Тип | NEC Electronics America Inc |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SOT-143, 4 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 4 | GALLIUM ARSENIDE | - | - | - | - | - | - | - | NEC ELECTRONICS AMERICA INC | - | - | - | - | - | 1 | - | - | PLASTIC/EPOXY | SOT-143, 4 PIN | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | LOW NOISE | - | DUAL | GULL WING | - | - | unknown | - | - | R-PDSO-G4 | Not Qualified | - | SINGLE | - | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | - | 13 V | - | METAL SEMICONDUCTOR | - | - | - | 0.03 pF | ULTRA HIGH FREQUENCY BAND | - | - | 16 dB | - | - | - | ||
| NE25139U74 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипTSM300NB06LCVAnlielectronics Тип | Taiwan Semiconductor |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| TSM300NB06LCV | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSGN21C105MKAnlielectronics Тип | SUMITOMO ELECTRIC Industries Ltd |
RF Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | SUMITOMO ELECTRIC INDUSTRIES LTD | - | - | - | - | - | - | - | - | - | , | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SGN21C105MK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS888T-GS08Anlielectronics Тип | Temic Semiconductors |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 4 | SILICON | - | - | - | - | 0.02 A | - | - | TEMIC SEMICONDUCTORS | - | - | - | - | - | 1 | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G4 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | DUAL | GULL WING | - | - | unknown | - | - | R-PDSO-G4 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | DUAL GATE, DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | - | 10 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ULTRA HIGH FREQUENCY BAND | - | - | 16.5 dB | - | - | - | ||
| S888T-GS08 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAP4501AGEY-HFAnlielectronics Тип | Advanced Power Electronics Corp |
TRANSISTOR POWER, FET, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 8 | SILICON | - | - | - | - | - | - | - | ADVANCED POWER ELECTRONICS CORP | - | - | - | - | - | 2 | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-J8 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | DUAL | J BEND | - | - | compliant | - | - | R-PDSO-J8 | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL AND P-CHANNEL | - | - | 0.02 Ω | 30 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | ||
| AP4501AGEY-HF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF6714MPBFAnlielectronics Тип | Infineon Technologies AG |
Power Field-Effect Transistor, 29A I(D), 25V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 3 | SILICON | - | - | - | - | 29 A | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | 1 | 150 °C | - | UNSPECIFIED | CHIP CARRIER, R-XBCC-N3 | RECTANGULAR | CHIP CARRIER | Obsolete | - | Yes | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | BOTTOM | NO LEAD | 260 | - | compliant | 40 | - | R-XBCC-N3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | - | 0.0021 Ω | 234 A | 25 V | 175 mJ | METAL-OXIDE SEMICONDUCTOR | 89 W | - | - | - | - | - | - | - | - | - | - | ||
| IRF6714MPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAPT752R8BNAnlielectronics Тип | Microsemi Corporation |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | - | - | - | - | - | 5 A | - | - | MICROSEMI CORP | - | - | - | - | - | 1 | 150 °C | - | - | , | - | - | Obsolete | TO-247AD | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | compliant | - | 3 | - | - | - | SINGLE | - | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 180 W | - | - | - | - | - | - | - | - | - | - | ||
| APT752R8BN | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SD2281SAnlielectronics Тип | onsemi |
Description: TRANSISTOR,BJT,NPN,50V V(BR)CEO,12A I(C),TO-247VAR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | - | - | - | - | - | - | - | - | ON SEMICONDUCTOR | - | - | - | - | - | 1 | - | - | - | - | - | - | Active | - | - | - | 10 MHz | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | compliant | - | - | - | - | - | SINGLE | - | - | - | - | NPN | - | - | - | - | - | - | - | 45 W | 12 A | 140 | - | - | - | - | - | - | - | - | ||
| 2SD2281S | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипRQJ0204XGDQATL-EAnlielectronics Тип | Renesas Electronics Corporation |
1600mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SC-59A, MPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 3 | SILICON | - | - | - | - | 1.6 A | - | - | RENESAS ELECTRONICS CORP | - | - | - | 1 | - | 1 | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Obsolete | SC-59A | Yes | - | - | - | - | - | - | - | e6 | Yes | EAR99 | - | TIN BISMUTH | - | - | - | DUAL | GULL WING | - | - | compliant | - | 3 | R-PDSO-G3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | - | 0.51 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 0.8 W | - | - | - | - | - | - | - | - | - | - | ||
| RQJ0204XGDQATL-E | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRL6903Anlielectronics Тип | Infineon Technologies AG |
Power Field-Effect Transistor, 105A I(D), 30V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | 3 | SILICON | - | - | - | - | 105 A | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | 1 | - | - | PLASTIC/EPOXY | TO-220AB, 3 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | - | No | - | - | - | - | - | - | - | e3 | - | EAR99 | - | MATTE TIN OVER NICKEL | - | AVALANCHE RATED, HIGH RELIABILITY | - | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | TO-220AB | 0.011 Ω | 360 A | 30 V | 1000 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | ||
| IRL6903 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSM9985GMAnlielectronics Тип | Silicon Standard Corp |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | SILICON STANDARD CORP | - | - | - | - | - | - | - | - | - | , | - | - | Contact Manufacturer | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SSM9985GM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSM3K7002KFAnlielectronics Тип | Toshiba America Electronic Components |
SMALL SIGNAL, FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 36 Weeks | YES | - | - | 3 | SILICON | - | - | 2016-02-12 | - | 0.4 A | - | - | TOSHIBA CORP | - | - | - | - | - | 1 | - | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | DUAL | GULL WING | NOT SPECIFIED | - | unknown | NOT SPECIFIED | - | R-PDSO-G3 | - | - | SINGLE WITH BUILT-IN DIODE AND RESISTOR | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | - | 1.75 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | ||
| SSM3K7002KF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSU3N90AAnlielectronics Тип | Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 2.5A I(D), 900V, 6.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | 3 | SILICON | - | - | - | - | 2.5 A | - | - | FAIRCHILD SEMICONDUCTOR CORP | - | - | - | - | - | 1 | 150 °C | - | PLASTIC/EPOXY | IPAK-3 | RECTANGULAR | IN-LINE | Obsolete | - | No | - | - | - | - | - | - | - | e0 | - | EAR99 | - | TIN LEAD | - | - | - | SINGLE | THROUGH-HOLE | - | - | compliant | - | 3 | R-PSIP-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | - | 6.2 Ω | 10 A | 900 V | 232 mJ | METAL-OXIDE SEMICONDUCTOR | 50 W | - | - | - | - | - | - | - | - | - | - | ||
| SSU3N90A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипTN0606N5Anlielectronics Тип | Supertex Inc |
Power Field-Effect Transistor, 3A I(D), 60V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | 3 | SILICON | - | - | - | - | 3 A | - | - | SUPERTEX INC | - | - | - | - | - | 1 | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | No | - | - | - | - | 32 ns | 20 ns | - | e0 | - | EAR99 | - | TIN LEAD | - | LOW THRESHOLD, LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | - | unknown | - | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | TO-220AB | 2 Ω | 4.1 A | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 45 W | - | - | 35 pF | - | 45 W | - | - | - | - | - | ||
| TN0606N5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAP0403GMAnlielectronics Тип | Advanced Power Electronics Corp |
TRANSISTOR 18.7 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | flame retardant plastic | - | 8 | SILICON | 1 | device; ring current sensor Ф14.5/32.6 mm; h - 12.5 mm | - | - | 18.7 A | - | 44.25 | ADVANCED POWER ELECTRONICS CORP | Ф22 mm | - | 0…100 (AC) A | - | - | - | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G8 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | SOT | - | - | - | 35*32*26/200 | - | - | - | - | - | - | EAR99 | digital LED ammeter DMS series (AD16-22AMS R) | - | emission - red | - | - | DUAL | GULL WING | - | 46.3 mm | compliant | - | 8 | R-PDSO-G8 | Not Qualified | coil - 177 mm | SINGLE WITH BUILT-IN DIODE | ≥2 MΩ | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | -25…+65 °C | - | 0.0045 Ω | 60 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | display - 20.3 mm | 32 mm | 32 mm | ||
| AP0403GM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSUD50P04-08-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 50A I(D), 40V, 0.0081ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 17 Weeks, 4 Days | YES | flame retardant plastic | - | 2 | SILICON | 1 | device; ring current sensor Ф14.5/ 32.5 mm; h - 12.5 mm | - | - | 50 A | 43.00 | - | VISHAY INTERTECHNOLOGY INC | Ф22 mm | - | (AC) - 50…500 V, 0-100A | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | 35*32*26/200 | - | - | - | -25…+65 °C | e3 | - | EAR99 | digital LED volt-ammeter DMS series (AD16-22VAM R) | Matte Tin (Sn) | light color - red | - | - | SINGLE | GULL WING | 260 | 51 mm | compliant | 30 | - | R-PSSO-G2 | Not Qualified | device ~ 100; sensor ~ 178 mm | SINGLE WITH BUILT-IN DIODE | ≥2 MOhm | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | TO-252 | 0.0081 Ω | 100 A | 40 V | 106 mJ | METAL-OXIDE SEMICONDUCTOR | 73.5 W | - | - | - | - | - | 1 | - | display - 28.5 mm | - | - | ||
| SUD50P04-08-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI4848DY-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 2.7A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 2.62 | 8 | SILICON | 1 | - | - | 500VAC | 2.7 A | - | - | VISHAY INTERTECHNOLOGY INC | - | 220 VAC or 24 VDC | - | - | 2.5 Amin | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | Yes | normally open (NO) | - | 60*18*12/1000 | 90±5 | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) - annealed | - | - | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | R-PDSO-G8 | Not Qualified | 14 mm | SINGLE WITH BUILT-IN DIODE | ≥100 MOhm | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | 0.085 Ω | - | 150 V | - | METAL-OXIDE SEMICONDUCTOR | 3 W | - | - | - | - | - | 1 | - | - | case 15.6 mm, leads 14 mm | 10.2 mm | ||
| SI4848DY-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI1308EDL-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 3 | SILICON | 1 | - | - | - | 1.4 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, SC-70, 3 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | - | e3 | - | EAR99 | - | MATTE TIN | - | - | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | R-PDSO-G3 | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | - | 0.132 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 0.5 W | - | - | 11 pF | - | - | 1 | - | - | - | - | ||
| SI1308EDL-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBCV26Anlielectronics Тип | STMicroelectronics |
Description: BCV26, PDSO-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | - | - | - | - | - | - | - | STMICROELECTRONICS | - | - | - | - | - | - | 150 °C | - | - | PDSO-3 | - | - | Active | - | No | - | 200 MHz | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | compliant | - | - | - | - | - | DARLINGTON | - | - | - | - | PNP | - | - | - | - | - | - | - | 0.3 W | 0.5 A | 20000 | - | - | - | - | - | - | - | - | ||
| BCV26 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF9540Anlielectronics Тип | Rochester Electronics LLC |
19A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | 3 | SILICON | 1 | - | - | - | 19 A | - | - | ROCHESTER ELECTRONICS LLC | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | NOT SPECIFIED | - | - | - | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | R-PSFM-T3 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | TO-220AB | 0.2 Ω | 76 A | 100 V | 960 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | ||
| IRF9540 |
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