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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Surface Mount | Housing Material | Number of Terminals | Transistor Element Material | Exterior Housing Material | Capacitance tolerance | Capacitors series | Case - inch | Case - mm | Date Of Intro | Dielectric strength | Drain Current-Max (ID) | Gross weight | Ihs Manufacturer | Kind of capacitor | Manufacturer Package Code | Maximum Current | Mounting | Mounting method | Mounting Style | Noal Capacitance | Number of switching cycles (electrical) | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Protection level | Purpose | Quantity in set/package | Rohs Code | Transport Package Size/Qty | Transport packaging size/quantity | Transport Packaging size/quantity | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Type of capacitor | Type of kit | Voltage Rating | Operating temperature | Tolerance | JESD-609 Code | Pbfree Code | ECCN Code | Connector type | Type | Terminal Finish | Color | Additional Feature | HTS Code | Capacitance | Pitch | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Lead Pitch | Number of contacts | Dielectric | Contact resistance | Contact Resistance | Configuration | Insulation resistance | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | Operating Temperature Range | Rated Current | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Rated Voltage | Feedback Cap-Max (Crss) | Highest Frequency Band | Power Dissipation Ambient-Max | Saturation Current | Operating voltage | Power Gain-Min (Gp) | Range of values | Height | Width |
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  | Mfr. ТипSISS27ADN-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | YES | - | 5 | SILICON | 1 | ±0.5pF | GCQ | 0201 | 0603 | 2017-03-22 | - | 50 A | 0.03 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | - | SMD | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | - | SQUARE | SMALL OUTLINE | Active | - | - | - | - | Yes | - | - | - | 102 ns | 45 ns | ceramic | - | - | -55...125°C | - | - | - | EAR99 | - | - | - | - | - | - | 9.7pF | - | DUAL | NO LEAD | NOT SPECIFIED | - | unknown | NOT SPECIFIED | - | S-PDSO-N5 | - | - | - | C0G (NP0) | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | - | - | 0.0051 Ω | 200 A | 30 V | 31 mJ | METAL-OXIDE SEMICONDUCTOR | 57 W | - | 440 pF | - | - | - | 50V | - | - | - | - | ||
| SISS27ADN-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI1967DH-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Small Signal Field-Effect Transistor, 1A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | YES | - | 6 | SILICON | 2 | - | GRM | - | - | - | - | 1 A | 100 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | - | SMD | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | 480pcs. | Yes | - | - | - | - | - | - | capacitors | - | - | - | e3 | - | EAR99 | - | - | MATTE TIN | - | - | - | - | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | R-PDSO-G6 | Not Qualified | - | - | - | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | - | - | 0.49 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 1.25 W | - | - | - | - | 1 | - | - | 10pF...1000pF | - | - | ||
| SI1967DH-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI1902CDL-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Small Signal Field-Effect Transistor, 1.1A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | YES | - | 6 | SILICON | 2 | ±0.05pF | GCQ | 0201 | 0603 | - | - | 1.1 A | 0.03 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | - | SMD | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | Yes | - | - | - | - | - | ceramic | - | - | -55...125°C | - | e3 | - | EAR99 | - | - | Matte Tin (Sn) | - | - | - | 9.6pF | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | R-PDSO-G6 | - | - | - | C0G (NP0) | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | - | - | 0.235 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 0.42 W | - | - | - | - | 1 | 50V | - | - | - | - | ||
| SI1902CDL-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI1469DH-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 3.2A I(D), 20V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 6 | SILICON | 1 | ±0.1pF | GCQ | 0201 | 0603 | - | - | 3.2 A | 0.03 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | - | SMD | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | Yes | - | - | - | - | - | ceramic | - | - | -55...125°C | - | e3 | - | EAR99 | - | - | MATTE TIN | - | - | - | 0.8pF | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | R-PDSO-G6 | Not Qualified | - | - | C0G (NP0) | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | - | - | 0.08 Ω | 8 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 2.78 W | - | - | - | - | 1 | 50V | - | - | - | - | ||
| SI1469DH-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI1926DL-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Small Signal Field-Effect Transistor, 0.34A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 6 | SILICON | 2 | ±0.25pF | GCQ | 0201 | 0603 | - | - | 0.34 A | 0.03 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | - | SMD | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN | RECTANGULAR | SMALL OUTLINE | End Of Life | - | - | - | - | Yes | - | - | - | - | - | ceramic | - | - | -55...125°C | - | e3 | - | EAR99 | - | - | MATTE TIN | - | - | - | 9.8pF | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | R-PDSO-G6 | Not Qualified | - | - | C0G (NP0) | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | - | - | 1.4 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 0.51 W | - | - | - | - | 1 | 50V | - | - | - | - | ||
| SI1926DL-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSST174Anlielectronics Тип | Calogic Inc |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, PLASTIC PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 3 | SILICON | 1 | - | GJM | 0201 | 0603 | - | - | - | 0.03 g | CALOGIC LLC | MLCC | - | - | SMD | - | - | - | - | 135 °C | - | PLASTIC/EPOXY | PLASTIC PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | No | - | - | - | - | - | ceramic | - | - | -55...125°C | ±5% | - | No | EAR99 | - | - | - | - | LOW INSERTION LOSS | 8541.21.00.95 | 20pF | - | DUAL | GULL WING | NOT SPECIFIED | - | compliant | NOT SPECIFIED | 3 | R-PDSO-G3 | Not Qualified | - | - | C0G (NP0) | - | - | SINGLE | - | DEPLETION MODE | - | SWITCHING | P-CHANNEL | - | - | - | 85 Ω | - | - | - | JUNCTION | 0.36 W | - | - | - | - | - | 100V | - | - | - | - | ||
| SST174 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипTN2404K-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 0.2A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | YES | - | 3 | SILICON | 1 | ±0.25pF | GCQ | 0201 | 0603 | - | - | 0.2 A | 0.03 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | - | SMD | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | TO-236, 3 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | Yes | - | - | - | - | - | ceramic | - | - | -55...125°C | - | e3 | - | EAR99 | - | - | MATTE TIN | - | - | 8541.21.00.95 | 9.2pF | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | R-PDSO-G3 | - | - | - | C0G (NP0) | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | - | TO-236AB | 4 Ω | - | 240 V | - | METAL-OXIDE SEMICONDUCTOR | 0.36 W | - | - | - | 0.36 W | 1 | 50V | - | - | - | - | ||
| TN2404K-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFPC50APBFAnlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 11A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | NO | - | 3 | SILICON | 1 | ±0.25pF | GCQ | 0201 | 0603 | - | - | 11 A | 0.03 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | - | SMD | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | End Of Life | TO-247AC | - | - | - | Yes | - | - | - | - | - | ceramic | - | - | -55...125°C | - | e3 | Yes | EAR99 | - | - | MATTE TIN | - | - | - | 9.1pF | - | SINGLE | THROUGH-HOLE | 260 | - | compliant | 30 | 3 | R-PSFM-T3 | Not Qualified | - | - | C0G (NP0) | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | - | TO-247AC | 0.58 Ω | 44 A | 600 V | 920 mJ | METAL-OXIDE SEMICONDUCTOR | 180 W | - | 9.7 pF | - | - | - | 50V | - | - | - | - | ||
| IRFPC50APBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI3932DV-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 6 | SILICON | 2 | ±0.25pF | GCQ | 0201 | 0603 | - | - | 3.7 A | 0.03 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | - | SMD | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 | RECTANGULAR | SMALL OUTLINE | Active | TSOP | - | - | - | Yes | - | - | - | - | - | ceramic | - | - | -55...125°C | - | e3 | Yes | EAR99 | - | - | Matte Tin (Sn) | - | - | - | 9.6pF | - | DUAL | GULL WING | 260 | - | compliant | 30 | 6 | R-PDSO-G6 | - | - | - | C0G (NP0) | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | - | - | 0.058 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 1.4 W | - | - | - | - | 1 | 50V | - | - | - | - | ||
| SI3932DV-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSIHG47N60E-GE3Anlielectronics Тип | Vishay Intertechnologies |
Power Field-Effect Transistor, 47A I(D), 600V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | NO | - | 3 | SILICON | 1 | ±0.05pF | GCQ | 0201 | 0603 | - | - | 47 A | 0.03 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | - | SMD | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | - | Yes | - | - | - | - | - | ceramic | - | - | -55...125°C | - | - | - | EAR99 | - | - | - | - | - | - | 9.4pF | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | - | compliant | NOT SPECIFIED | - | R-PSFM-T3 | - | - | - | C0G (NP0) | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | - | TO-247AC | 0.064 Ω | 145 A | 600 V | 1800 mJ | METAL-OXIDE SEMICONDUCTOR | 357 W | - | - | - | - | - | 50V | - | - | - | - | ||
| SIHG47N60E-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI2365EDS-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 17 Weeks, 3 Days | YES | - | 3 | SILICON | 1 | ±0.1pF | GCQ | 0201 | 0603 | - | - | 5.9 A | 0.03 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | - | SMD | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | TO-236, SOT-23, 3 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | Yes | - | - | - | - | - | ceramic | - | - | -55...125°C | - | e3 | Yes | EAR99 | - | - | MATTE TIN | - | - | - | 8.9pF | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | R-PDSO-G3 | - | - | - | C0G (NP0) | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | - | TO-236AB | 0.041 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 1.7 W | - | - | - | - | 1 | 50V | - | - | - | - | ||
| SI2365EDS-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI2333CDS-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 7.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 3 | SILICON | 1 | ±0.05pF | GCQ | 0201 | 0603 | - | - | 7.1 A | 0.03 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | - | SMD | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | TO-236, SOT-23, 3 PIN | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | - | - | - | Yes | - | - | - | - | - | ceramic | - | - | -55...125°C | - | e3 | - | EAR99 | - | - | MATTE TIN | - | - | - | 8.5pF | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | R-PDSO-G3 | Not Qualified | - | - | C0G (NP0) | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | - | TO-236AB | 0.035 Ω | - | 12 V | - | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | 260 pF | - | - | 1 | 50V | - | - | - | - | ||
| SI2333CDS-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI4134DY-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Small Signal Field-Effect Transistor, 14A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 8 | SILICON | 1 | ±0.25pF | GCQ | 0201 | 0603 | - | - | 14 A | 0.03 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | - | SMD | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | Yes | - | - | - | - | - | ceramic | - | - | -55...125°C | - | - | - | EAR99 | - | - | Pure Matte Tin (Sn) - annealed | - | - | - | 9pF | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | R-PDSO-G8 | - | - | - | C0G (NP0) | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | - | MS-012AA | 0.014 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 5 W | - | - | - | - | 1 | 50V | - | - | - | - | ||
| SI4134DY-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSIR626LDP-T1-RE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | YES | - | 5 | SILICON | 1 | ±0.1pF | GCQ | 0201 | 0603 | 2018-09-17 | - | 186 A | 0.03 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | - | SMD | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | Yes | - | - | - | 110 ns | 162 ns | ceramic | - | - | -55...125°C | - | - | - | EAR99 | - | - | - | - | - | - | 8.7pF | - | DUAL | FLAT | NOT SPECIFIED | - | unknown | NOT SPECIFIED | - | R-PDSO-F5 | - | - | - | C0G (NP0) | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | - | - | 0.0021 Ω | 400 A | 60 V | 125 mJ | METAL-OXIDE SEMICONDUCTOR | 104 W | - | 60 pF | - | - | - | 50V | - | - | - | - | ||
| SIR626LDP-T1-RE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSI1012R-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-75A, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks, 4 Days | YES | metal | 3 | SILICON | 1 | ±0.5pF | GCQ | 0201 | 0603 | - | - | 0.5 A | 0.03 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | 30 A | SMD | - | - | - | ≥1 million (mechanical) | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, SC-75A, 3 PIN | RECTANGULAR | SMALL OUTLINE | End Of Life | - | - | remote control of electrical equipment | - | Yes | - | - | 63*33*25/100 | - | - | ceramic | - | - | -55...125°C | - | e3 | - | EAR99 | - | - | MATTE TIN | gray | LOW THRESHOLD | - | 8.4pF | - | DUAL | GULL WING | 260 | 103 mm | compliant | 30 | - | R-PDSO-G3 | Not Qualified | - | - | C0G (NP0) | - | ≤50 mΩ | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | -25…+70 °C | 10 A | - | 0.7 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 0.175 W | 380 V | - | - | - | 1 | 50V | - | - | 50.5 mm | 61 mm | ||
| SI1012R-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMRF275GAnlielectronics Тип | TE Connectivity |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 4 | SILICON | 2 | ±0.05pF | GCQ | 0201 | 0603 | - | - | 26 A | 0.03 g | TE CONNECTIVITY LTD | MLCC | CASE 375-04 | - | SMD | - | Through hole | 47 pFmin | - | - | - | CERAMIC, METAL-SEALED COFIRED | - | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | - | - | Yes | 44*27*22/30000 | - | - | - | - | ceramic | - | 50V | -55...125°C | - | - | - | EAR99 | - | MLCC | - | - | - | - | 1.8pF | - | DUAL | FLAT | NOT SPECIFIED | - | unknown | NOT SPECIFIED | 4 | R-CDFM-F4 | Not Qualified | 5.08 mm | - | NP0 | - | - | COMMON SOURCE, 2 ELEMENTS | - | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | - | - | 65 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | ULTRA HIGH FREQUENCY BAND | - | - | 50V | - | - | - | - | ||
| MRF275G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD2282UKAnlielectronics Тип | TT Electronics Power and Hybrid / Semelab Limited |
Description: UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 4 | SILICON | 1 | ±0.25pF | GCQ | 0201 | 0603 | - | 500 (50 Hz, 1 min.) V | - | 17.30 | SEMELAB LTD | MLCC | - | - | SMD | soldering | - | - | - | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G4 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | IP67 | - | - | Yes | - | 34.4*23.3*24.5/100 | - | - | - | ceramic | - | - | -40 …+105 °C | - | e3 | No | EAR99 | F - socket | - | MATTE TIN | - | LOW NOISE | - | 1.7pF | 2.77 mm | DUAL | GULL WING | - | 16.3 | compliant | - | - | R-PDSO-G4 | Not Qualified | - | 9 in two rows | C0G (NP0) | ≤20 mOhm | - | SINGLE | ≥1000 (at Uins.dc=500 V) MOhm | ENHANCEMENT MODE | DRAIN | AMPLIFIER | N-CHANNEL | - | - | - | - | - | 40 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | 1 pF | ULTRA HIGH FREQUENCY BAND | - | - | 50V | 8 dB | - | 21.10 ±0.25 | 39.50 ±0.25 | ||
| D2282UK TT Electronics Power and Hybrid / Semelab Limited
RoHS :
Инкапсуляция :
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Есть складские запасы :
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1 :
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| | Mfr. ТипSIS126DN-T1-GE3Anlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | YES | - | 5 | SILICON | 1 | - | GCM | 0402 | 1005 | 2019-02-07 | - | 45.1 A | 0.03 g | VISHAY INTERTECHNOLOGY INC | MLCC | - | - | SMD | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | SOP-8 | SQUARE | SMALL OUTLINE | Active | - | - | - | - | Yes | - | - | - | 44 ns | 38 ns | ceramic | - | - | -55...125°C | ±5% | - | - | EAR99 | - | - | - | - | - | - | 82pF | - | DUAL | FLAT | 260 | - | unknown | 40 | - | S-PDSO-F5 | - | - | - | C0G (NP0) | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | - | - | 0.0125 Ω | 100 A | 80 V | 20 mJ | METAL-OXIDE SEMICONDUCTOR | 52 W | - | 11.2 pF | - | - | - | 100V | - | - | - | - | ||
| SIS126DN-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBLP7G22-10Anlielectronics Тип | Ampleon |
RF Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | ±0.5pF | GCQ | 0201 | 0603 | - | - | - | 0.03 g | AMPLEON NETHERLANDS B V | MLCC | - | - | SMD | - | - | - | - | - | - | - | , | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | ceramic | - | - | -55...125°C | - | - | - | EAR99 | - | - | - | - | - | - | 5.6pF | - | - | - | 260 | - | unknown | 30 | - | - | - | - | - | C0G (NP0) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 3 | 50V | - | - | - | - | ||
| BLP7G22-10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF7241TRPBFAnlielectronics Тип | International Rectifier |
Description: Small Signal Field-Effect Transistor, 6.2A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 8 | SILICON | 1 | ±0.05pF | GCQ | 0201 | 0603 | - | - | 6.2 A | 0.03 g | INTERNATIONAL RECTIFIER CORP | MLCC | - | - | SMD | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | LEAD FREE, SOP-8 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | - | - | - | Yes | - | - | - | - | - | ceramic | - | - | -55...125°C | - | e3 | Yes | EAR99 | - | - | MATTE TIN | - | HIGH RELIABILITY | - | 4.7pF | - | DUAL | GULL WING | 260 | - | compliant | 30 | 8 | R-PDSO-G8 | Not Qualified | - | - | C0G (NP0) | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | SWITCHING | P-CHANNEL | - | - | MS-012AA | 0.041 Ω | 25 A | 40 V | - | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | - | - | - | 1 | 50V | - | - | - | - | ||
| IRF7241TRPBF |
Индекс :
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