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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Drain Current-Max (ID) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Transition Frequency-Nom (fT) | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Feedback Cap-Max (Crss) | Power Dissipation Ambient-Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипIRF7805APBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 8 | SILICON | 13 A | INTERNATIONAL RECTIFIER CORP | 1 | 1 | 150 °C | PLASTIC/EPOXY | LEAD FREE, SO-8 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | Yes | - | - | - | e3 | Yes | EAR99 | MATTE TIN | - | - | DUAL | GULL WING | 260 | compliant | 30 | 8 | - | R-PDSO-G8 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | MS-012AA | 0.011 Ω | 100 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | - | - | - | ||
| IRF7805APBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRLS4030Anlielectronics Тип | International Rectifier |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRLS4030 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFR3504ZAnlielectronics Тип | Infineon Technologies AG |
Description: Power Field-Effect Transistor, 42A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | 42 A | INFINEON TECHNOLOGIES AG | 1 | 1 | 175 °C | PLASTIC/EPOXY | DPAK-3 | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | No | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | - | SINGLE | GULL WING | NOT SPECIFIED | not_compliant | NOT SPECIFIED | - | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-252AA | 0.009 Ω | 310 A | 40 V | 77 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | ||
| IRFR3504Z | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N5109Anlielectronics Тип | General Transistor Corp |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | GENERAL TRANSISTOR CORP | - | 1 | - | - | - | - | - | Contact Manufacturer | - | - | 1200 MHz | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | - | 2.5 W | 0.5 A | 40 | - | - | ||
| 2N5109 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBF964Anlielectronics Тип | Siemens |
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | 0.03 A | SIEMENS A G | - | 1 | 150 °C | - | - | - | - | Transferred | - | No | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 0.225 W | - | - | - | - | ||
| BF964 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF7413TRAnlielectronics Тип | TT Electronics Resistors |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRF7413TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипJANTX2N6790Anlielectronics Тип | Semicoa Semiconductors |
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 3.5 A | SEMICOA CORP | - | 1 | - | METAL | HERMETIC SEALED, TO-39, 3 PIN | ROUND | CYLINDRICAL | Contact Manufacturer | - | No | - | - | - | - | - | EAR99 | - | - | - | BOTTOM | WIRE | NOT SPECIFIED | unknown | NOT SPECIFIED | - | MIL-19500 | O-MBCY-W3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | AMPLIFIER | N-CHANNEL | TO-205AF | 0.85 Ω | 14 A | 200 V | 0.242 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | ||
| JANTX2N6790 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипJANTX2N7225Anlielectronics Тип | Harris Semiconductor |
Power Field-Effect Transistor, 27.4A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 27.4 A | HARRIS SEMICONDUCTOR | - | 1 | - | PLASTIC/EPOXY | - | SQUARE | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | NOT SPECIFIED | RADIATION HARDENED | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | - | MILITARY STANDARD (USA) | S-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | TO-254AA | 0.1 Ω | - | 200 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | 150 W | ||
| JANTX2N7225 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипJANTX2N6790Anlielectronics Тип | Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 3.5 A | FAIRCHILD SEMICONDUCTOR CORP | - | 1 | 150 °C | METAL | - | ROUND | CYLINDRICAL | Obsolete | - | No | - | - | - | e0 | - | EAR99 | TIN LEAD | RADIATION HARDENED | - | BOTTOM | WIRE | - | compliant | - | - | - | O-MBCY-W3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-205AF | 0.8 Ω | 14 A | 200 V | - | METAL-OXIDE SEMICONDUCTOR | 20 W | - | - | - | - | ||
| JANTX2N6790 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBC177Anlielectronics Тип | Comset Semiconductor |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | COMSET SEMICONDUCTORS | - | - | - | - | - | - | - | Contact Manufacturer | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| BC177 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBC177Anlielectronics Тип | North American Philips Discrete Products Div |
Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV | - | 1 | 175 °C | - | - | - | - | Transferred | - | No | 190 MHz | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | PNP | - | - | - | - | - | - | 0.6 W | 0.2 A | 120 | - | - | ||
| BC177 North American Philips Discrete Products Div
RoHS :
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| | Mfr. ТипBC177Anlielectronics Тип | Texas Instruments |
BC177
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | 1 | 175 °C | - | , | - | - | Obsolete | - | No | 190 MHz | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | PNP | - | - | - | - | - | - | 0.6 W | 0.2 A | 120 | - | - | ||
| BC177 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBC177Anlielectronics Тип | National Semiconductor Corporation |
TRANSISTOR,BJT,PNP,45V V(BR)CEO,200MA I(C),TO-206AA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | 1 | 175 °C | - | - | - | - | Obsolete | - | No | 190 MHz | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | compliant | - | - | - | - | - | SINGLE | - | - | - | PNP | - | - | - | - | - | - | 0.6 W | 0.2 A | 120 | - | - | ||
| BC177 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIPL60R085P7 E8235Anlielectronics Тип | Infineon Technologies AG |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IPL60R085P7 E8235 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIPP120P04P4L03AKSAAnlielectronics Тип | Infineon Technologies AG |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IPP120P04P4L03AKSA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAP6679GM-HFAnlielectronics Тип | Advanced Power Electronics Corp |
TRANSISTOR 14 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 8 | SILICON | 14 A | ADVANCED POWER ELECTRONICS CORP | - | 1 | 150 °C | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | SOT | - | - | - | - | - | - | EAR99 | - | - | - | DUAL | GULL WING | - | compliant | - | 8 | - | R-PDSO-G8 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | 0.009 Ω | 50 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | ||
| AP6679GM-HF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипTSM120N06LCPAnlielectronics Тип | Taiwan Semiconductor |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| TSM120N06LCP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDP10N60NZAnlielectronics Тип | Rochester Electronics LLC |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FDP10N60NZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFQPF10N60CAnlielectronics Тип | Rochester Electronics LLC |
Description: 9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 9.5 A | ROCHESTER ELECTRONICS LLC | NOT APPLICABLE | 1 | - | PLASTIC/EPOXY | LEAD FREE, TO-220F, 3 PIN | RECTANGULAR | FLANGE MOUNT | Active | TO-220AB | Yes | - | - | - | e3 | Yes | - | MATTE TIN | FAST SWITCHING | - | SINGLE | THROUGH-HOLE | NOT APPLICABLE | unknown | NOT APPLICABLE | 3 | - | R-PSFM-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 0.73 Ω | 38 A | 600 V | 700 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | ||
| FQPF10N60C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипJANTX2N6798Anlielectronics Тип | Harris Semiconductor |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 5.5 A | HARRIS SEMICONDUCTOR | - | 1 | 150 °C | METAL | - | ROUND | CYLINDRICAL | Obsolete | - | - | - | 90 ns | 80 ns | - | - | EAR99 | NOT SPECIFIED | RADIATION HARDENED | 8541.29.00.95 | BOTTOM | WIRE | - | unknown | - | - | MILITARY STANDARD (USA) | O-MBCY-W3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-205AF | 0.4 Ω | 22 A | 200 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | 150 pF | 25 W | ||
| JANTX2N6798 |
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