- Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - Special Purpose
| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Exterior Housing Material | Drain Current-Max (ID) | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Transition Frequency-Nom (fT) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Feedback Cap-Max (Crss) | Highest Frequency Band | Power Dissipation Ambient-Max | Saturation Current | Power Gain-Min (Gp) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипIRL630Anlielectronics Тип | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | 9 A | VISHAY INTERTECHNOLOGY INC | - | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | No | - | e0 | No | EAR99 | TIN LEAD | LOGIC LEVEL COMPATIBLE | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | TO-220AB | 0.4 Ω | - | 200 V | - | METAL-OXIDE SEMICONDUCTOR | 74 W | - | - | - | - | - | - | - | ||
| IRL630 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRL630Anlielectronics Тип | Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | 9 A | FAIRCHILD SEMICONDUCTOR CORP | - | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | No | - | e0 | - | EAR99 | TIN LEAD | LOGIC LEVEL COMPATIBLE | - | SINGLE | THROUGH-HOLE | - | unknown | - | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-220AB | 0.4 Ω | 32 A | 200 V | 54 mJ | METAL-OXIDE SEMICONDUCTOR | 75 W | - | - | - | - | - | - | - | ||
| IRL630 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF7303PBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 8 | SILICON | 2 | 4.9 A | INTERNATIONAL RECTIFIER CORP | - | 150 °C | PLASTIC/EPOXY | LEAD FREE, SO-8 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | Yes | - | e3 | Yes | EAR99 | MATTE TIN | LOGIC LEVEL COMPATIBLE | - | DUAL | GULL WING | 260 | unknown | 30 | 8 | R-PDSO-G8 | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | MS-012AA | 0.05 Ω | 20 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 1.4 W | - | - | - | - | - | 1 | - | ||
| IRF7303PBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBC860CWAnlielectronics Тип | Diotec Semiconductor AG |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | DIOTEC SEMICONDUCTOR AG | - | - | - | , | - | - | Active | - | Yes | - | - | - | EAR99 | - | - | - | - | - | 260 | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | ||
| BC860CW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N5484Anlielectronics Тип | National Semiconductor Corporation |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | - | NATIONAL SEMICONDUCTOR CORP | - | 150 °C | PLASTIC/EPOXY | - | ROUND | CYLINDRICAL | Transferred | - | No | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | BOTTOM | THROUGH-HOLE | - | compliant | - | - | O-PBCY-T3 | Not Qualified | SINGLE | DEPLETION MODE | - | SWITCHING | N-CHANNEL | TO-92 | - | - | - | - | JUNCTION | 0.31 W | - | - | 1 pF | ULTRA HIGH FREQUENCY BAND | - | - | 16 dB | ||
| 2N5484 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N5484Anlielectronics Тип | Micro Electronics Corporation |
Description: RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, TO-92DD, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | - | MICRO ELECTRONICS LTD | - | 150 °C | PLASTIC/EPOXY | CYLINDRICAL, O-PBCY-T3 | ROUND | CYLINDRICAL | Contact Manufacturer | TO-92 | - | - | - | - | EAR99 | - | - | - | BOTTOM | THROUGH-HOLE | - | unknown | - | 3 | O-PBCY-T3 | Not Qualified | SINGLE | DEPLETION MODE | - | AMPLIFIER | N-CHANNEL | TO-92 | - | - | - | - | JUNCTION | 0.31 W | - | - | 1 pF | ULTRA HIGH FREQUENCY BAND | - | - | - | ||
| 2N5484 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N5484Anlielectronics Тип | Philips Semiconductors |
Description: Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | PHILIPS SEMICONDUCTORS | - | 150 °C | - | - | - | - | Transferred | - | No | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | JUNCTION | 0.31 W | - | - | - | - | - | - | - | ||
| 2N5484 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N5484Anlielectronics Тип | Motorola Mobility LLC |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-226AA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | 0.03 A | MOTOROLA INC | - | 150 °C | PLASTIC/EPOXY | CYLINDRICAL, O-PBCY-T3 | ROUND | CYLINDRICAL | Obsolete | - | No | - | e0 | - | EAR99 | TIN LEAD | - | 8541.21.00.75 | BOTTOM | THROUGH-HOLE | - | unknown | - | - | O-PBCY-T3 | Not Qualified | SINGLE | DEPLETION MODE | - | AMPLIFIER | N-CHANNEL | TO-226AA | - | - | - | - | JUNCTION | - | - | - | 1 pF | ULTRA HIGH FREQUENCY BAND | 0.35 W | - | 16 dB | ||
| 2N5484 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N5484Anlielectronics Тип | Harris Semiconductor |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | HARRIS SEMICONDUCTOR | - | 150 °C | - | - | - | - | Obsolete | - | No | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | JUNCTION | 0.31 W | - | - | - | - | - | - | - | ||
| 2N5484 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N5484Anlielectronics Тип | Texas Instruments |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | - | NATIONAL SEMICONDUCTOR CORP | - | 150 °C | PLASTIC/EPOXY | CYLINDRICAL, O-PBCY-T3 | ROUND | CYLINDRICAL | Transferred | - | No | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | BOTTOM | THROUGH-HOLE | - | unknown | - | - | O-PBCY-T3 | Not Qualified | SINGLE | DEPLETION MODE | - | SWITCHING | N-CHANNEL | TO-92 | - | - | - | - | JUNCTION | 0.31 W | - | - | 1 pF | ULTRA HIGH FREQUENCY BAND | - | - | 16 dB | ||
| 2N5484 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N5484Anlielectronics Тип | NXP Semiconductors |
Description: TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, FET RF Small Signal
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | - | NXP SEMICONDUCTORS | - | 150 °C | PLASTIC/EPOXY | - | ROUND | CYLINDRICAL | Obsolete | - | - | - | - | - | EAR99 | - | LOW NOISE | - | BOTTOM | THROUGH-HOLE | - | unknown | - | - | O-PBCY-T3 | Not Qualified | SINGLE | DEPLETION MODE | - | AMPLIFIER | N-CHANNEL | TO-92 | - | - | 25 V | - | JUNCTION | - | - | - | 1 pF | ULTRA HIGH FREQUENCY BAND | - | - | - | ||
| 2N5484 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N5484Anlielectronics Тип | Allegro MicroSystems LLC |
RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-226AA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | - | ALLEGRO MICROSYSTEMS LLC | - | 150 °C | PLASTIC/EPOXY | - | ROUND | CYLINDRICAL | Obsolete | - | No | - | e0 | - | EAR99 | TIN LEAD | - | - | BOTTOM | THROUGH-HOLE | - | unknown | - | - | O-PBCY-T3 | Not Qualified | SINGLE | DEPLETION MODE | - | - | N-CHANNEL | TO-226AA | - | - | - | - | JUNCTION | 0.31 W | - | - | 1.2 pF | - | - | - | - | ||
| 2N5484 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N5484Anlielectronics Тип | Vishay Intertechnologies |
Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | VISHAY INTERTECHNOLOGY INC | - | 150 °C | - | - | - | - | Obsolete | - | No | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | JUNCTION | 0.31 W | - | - | - | - | - | - | - | ||
| 2N5484 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N5484Anlielectronics Тип | Freescale Semiconductor |
TRANSISTOR,JFET,N-CHANNEL,5MA I(DSS),TO-92
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | MOTOROLA SEMICONDUCTOR PRODUCTS | - | 150 °C | - | , | - | - | Obsolete | - | No | - | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | JUNCTION | 0.31 W | - | - | - | - | - | - | - | ||
| 2N5484 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N5484Anlielectronics Тип | Temic Semiconductors |
RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-220AA (TO-92), 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | - | TEMIC SEMICONDUCTORS | - | - | PLASTIC/EPOXY | TO-220AA (TO-92), 3 PIN | ROUND | CYLINDRICAL | Transferred | - | - | - | - | - | EAR99 | - | - | - | BOTTOM | THROUGH-HOLE | - | unknown | - | - | O-PBCY-T3 | Not Qualified | SINGLE | DEPLETION MODE | - | AMPLIFIER | N-CHANNEL | - | - | - | 25 V | - | JUNCTION | - | - | - | 5 pF | - | - | - | - | ||
| 2N5484 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N5484Anlielectronics Тип | Micro Electronics Ltd |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, TO-92DD, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | - | MICRO ELECTRONICS LTD | - | 150 °C | PLASTIC/EPOXY | TO-92DD, 3 PIN | ROUND | CYLINDRICAL | Contact Manufacturer | - | - | - | - | - | EAR99 | - | - | - | BOTTOM | THROUGH-HOLE | - | unknown | - | - | O-PBCY-T3 | Not Qualified | SINGLE | DEPLETION MODE | - | AMPLIFIER | N-CHANNEL | TO-92 | - | - | - | - | JUNCTION | 0.31 W | - | - | 1 pF | ULTRA HIGH FREQUENCY BAND | - | - | - | ||
| 2N5484 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N5484Anlielectronics Тип | Vishay Sprague |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | SPRAGUE ELECTRIC CO | - | 150 °C | - | - | - | - | Transferred | - | No | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | JUNCTION | 0.31 W | - | - | - | - | - | - | - | ||
| 2N5484 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип2N5484Anlielectronics Тип | Solitron Devices Inc |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-18, TO-18, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | - | SOLITRON DEVICES INC | - | 150 °C | METAL | TO-18, 3 PIN | ROUND | CYLINDRICAL | Active | BCY | No | - | - | No | EAR99 | - | - | - | BOTTOM | WIRE | NOT SPECIFIED | unknown | NOT SPECIFIED | 3 | O-MBCY-W3 | Not Qualified | SINGLE | DEPLETION MODE | - | AMPLIFIER | N-CHANNEL | TO-18 | - | - | - | - | JUNCTION | 0.31 W | - | - | 1 pF | VERY HIGH FREQUENCY BAND | - | - | 16 dB | ||
| 2N5484 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBC141Anlielectronics Тип | Freescale Semiconductor |
TRANSISTOR,BJT,NPN,60V V(BR)CEO,1A I(C),TO-39
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | MOTOROLA SEMICONDUCTOR PRODUCTS | 1 | 150 °C | - | , | - | - | Obsolete | - | No | 50 MHz | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | - | 0.8 W | 1 A | 40 | - | - | - | - | - | ||
| BC141 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBC141Anlielectronics Тип | Infineon Technologies AG |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | INFINEON TECHNOLOGIES AG | 1 | 150 °C | - | - | - | - | Obsolete | - | No | 50 MHz | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | - | 0.8 W | 1 A | 40 | - | - | - | - | - | ||
| BC141 |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ