Transistors - Special Purpose Products For Sale - PDF - Discrete Semiconductor Products -Page7

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Surface Mount	Number of Terminals	Transistor Element Material	Exterior Housing Material	Drain Current-Max (ID)	Ihs Manufacturer	Number of Elements	Operating Temperature-Max	Package Body Material	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Transition Frequency-Nom (fT)	Turn-off Time-Max (toff)	Turn-on Time-Max (ton)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	Reference Standard	JESD-30 Code	Qualification Status	Configuration	Operating Mode	Case Connection	Transistor Application	Polarity/Channel Type	JEDEC-95 Code	Drain-source On Resistance-Max	Pulsed Drain Current-Max (IDM)	DS Breakdown Voltage-Min	Avalanche Energy Rating (Eas)	FET Technology	Power Dissipation-Max (Abs)	Collector Current-Max (IC)	DC Current Gain-Min (hFE)	Collector-Emitter Voltage-Max	VCEsat-Max	Feedback Cap-Max (Crss)	Highest Frequency Band	Collector-Base Capacitance-Max	Power Dissipation Ambient-Max	Saturation Current

Изображение	Тип	Марка	Объяснение	Количество	Surface Mount	Number of Terminals	Transistor Element Material	Exterior Housing Material	Drain Current-Max (ID)	Ihs Manufacturer	Number of Elements	Operating Temperature-Max	Package Body Material	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Transition Frequency-Nom (fT)	Turn-off Time-Max (toff)	Turn-on Time-Max (ton)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	Reference Standard	JESD-30 Code	Qualification Status	Configuration	Operating Mode	Case Connection	Transistor Application	Polarity/Channel Type	JEDEC-95 Code	Drain-source On Resistance-Max	Pulsed Drain Current-Max (IDM)	DS Breakdown Voltage-Min	Avalanche Energy Rating (Eas)	FET Technology	Power Dissipation-Max (Abs)	Collector Current-Max (IC)	DC Current Gain-Min (hFE)	Collector-Emitter Voltage-Max	VCEsat-Max	Feedback Cap-Max (Crss)	Highest Frequency Band	Collector-Base Capacitance-Max	Power Dissipation Ambient-Max	Saturation Current
	Mfr. Тип JANTX2N6782 Anlielectronics Тип	Harris Semiconductor	Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Сборник данных Сравнение	Min.:1 Mult.:1	NO	3	SILICON	-	3.5 A	HARRIS SEMICONDUCTOR	1	150 °C	METAL	-	ROUND	CYLINDRICAL	Obsolete	-	-	-	45 ns	40 ns	-	-	EAR99	NOT SPECIFIED	RADIATION HARDENED	8541.29.00.95	BOTTOM	WIRE	-	unknown	-	-	MILITARY STANDARD (USA)	O-MBCY-W3	Not Qualified	SINGLE WITH BUILT-IN DIODE	ENHANCEMENT MODE	DRAIN	SWITCHING	N-CHANNEL	TO-205AF	0.6 Ω	14 A	100 V	-	METAL-OXIDE SEMICONDUCTOR	-	-	-	-	-	25 pF	-	-	15 W	-
JANTX2N6782 Harris Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IRF630S Anlielectronics Тип	Transys Electronics Limited	Transistor Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	TRANSYS ELECTRONICS LTD	-	-	-	-	-	-	Contact Manufacturer	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	unknown	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF630S Transys Electronics Limited RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IRF630S Anlielectronics Тип	Philips Semiconductors	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Сборник данных Сравнение	Min.:1 Mult.:1	YES	-	-	-	9 A	PHILIPS SEMICONDUCTORS	1	150 °C	-	-	-	-	Transferred	-	No	-	-	-	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	-	-	-	-	unknown	-	-	-	-	-	SINGLE	ENHANCEMENT MODE	-	-	N-CHANNEL	-	-	-	-	-	METAL-OXIDE SEMICONDUCTOR	74 W	-	-	-	-	-	-	-	-	-
IRF630S Philips Semiconductors RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип AP6679GH Anlielectronics Тип	Advanced Power Electronics Corp	TRANSISTOR 75 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Сборник данных Сравнение	Min.:1 Mult.:1	YES	2	SILICON	-	75 A	ADVANCED POWER ELECTRONICS CORP	1	150 °C	PLASTIC/EPOXY	ROHS COMPLIANT PACKAGE-3	RECTANGULAR	SMALL OUTLINE	Contact Manufacturer	TO-252	-	-	-	-	-	-	EAR99	-	-	-	SINGLE	GULL WING	-	compliant	-	4	-	R-PSSO-G2	Not Qualified	SINGLE WITH BUILT-IN DIODE	ENHANCEMENT MODE	-	SWITCHING	P-CHANNEL	TO-252	0.009 Ω	300 A	30 V	-	METAL-OXIDE SEMICONDUCTOR	-	-	-	-	-	-	-	-	-	-
AP6679GH Advanced Power Electronics Corp RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FQPF8N60C Anlielectronics Тип	Rochester Electronics LLC	7.5A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN Сборник данных Сравнение	Min.:1 Mult.:1	NO	3	SILICON	1	7.5 A	ROCHESTER ELECTRONICS LLC	-	-	PLASTIC/EPOXY	LEAD FREE, TO-220F, 3 PIN	RECTANGULAR	FLANGE MOUNT	Active	TO-220AB	Yes	-	-	-	e3	Yes	-	MATTE TIN	FAST SWITCHING	-	SINGLE	THROUGH-HOLE	NOT APPLICABLE	unknown	NOT APPLICABLE	3	-	R-PSFM-T3	COMMERCIAL	SINGLE WITH BUILT-IN DIODE	ENHANCEMENT MODE	ISOLATED	SWITCHING	N-CHANNEL	TO-220AB	1.2 Ω	30 A	600 V	230 mJ	METAL-OXIDE SEMICONDUCTOR	-	-	-	-	-	-	-	-	-	NOT APPLICABLE
FQPF8N60C Rochester Electronics LLC RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип BC560B Anlielectronics Тип	North American Philips Discrete Products Div	Transistor Сборник данных Сравнение	Min.:1 Mult.:1	NO	-	-	1	-	NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV	-	150 °C	-	,	-	-	Transferred	-	No	-	-	-	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	-	-	-	-	unknown	-	-	-	-	-	SINGLE	-	-	-	PNP	-	-	-	-	-	-	0.625 W	0.1 A	180	-	-	-	-	-	-	-
BC560B North American Philips Discrete Products Div RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип BC560B Anlielectronics Тип	Allegro MicroSystems LLC	Transistor, Сборник данных Сравнение	Min.:1 Mult.:1	NO	-	-	1	-	ALLEGRO MICROSYSTEMS LLC	-	150 °C	-	,	-	-	Obsolete	-	No	-	-	-	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	-	-	-	-	unknown	-	-	-	-	-	SINGLE	-	-	-	PNP	-	-	-	-	-	-	0.625 W	0.1 A	180	-	-	-	-	-	-	-
BC560B Allegro MicroSystems LLC RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип BF720 Anlielectronics Тип	Diotec Semiconductor AG	Transistor Сборник данных Сравнение	Min.:1 Mult.:1	YES	4	SILICON	1	-	DIOTEC SEMICONDUCTOR AG	-	150 °C	PLASTIC/EPOXY	SOT-223, 4 PIN	RECTANGULAR	SMALL OUTLINE	Active	-	Yes	50 MHz	-	-	e3	-	EAR99	Matte Tin (Sn)	-	-	DUAL	GULL WING	260	compliant	-	-	-	R-PDSO-G4	-	SINGLE	-	COLLECTOR	-	NPN	-	-	-	-	-	-	1.5 W	0.1 A	50	300 V	0.6 V	-	-	1.6 pF	-	1
BF720 Diotec Semiconductor AG RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип BF550 Anlielectronics Тип	Infineon Technologies AG	Transistor Сборник данных Сравнение	Min.:1 Mult.:1	YES	-	-	1	-	INFINEON TECHNOLOGIES AG	-	150 °C	-	,	-	-	Obsolete	-	-	350 MHz	-	-	-	-	EAR99	-	-	-	-	-	-	compliant	-	-	-	-	-	SINGLE	-	-	-	PNP	-	-	-	-	-	-	0.28 W	0.025 A	50	-	-	-	-	-	-	-
BF550 Infineon Technologies AG RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип BUK9Y43-60E Anlielectronics Тип	Nexperia	Power Field-Effect Transistor Сборник данных Сравнение	Min.:1 Mult.:1	YES	4	SILICON	1	22 A	NEXPERIA	-	-	PLASTIC/EPOXY	SMALL OUTLINE, R-PSSO-G4	RECTANGULAR	SMALL OUTLINE	Active	-	Yes	-	-	-	e3	-	EAR99	TIN	AVALANCHE RATED	-	SINGLE	GULL WING	260	not_compliant	30	-	AEC-Q101; IEC-60134	R-PSSO-G4	-	SINGLE WITH BUILT-IN DIODE	ENHANCEMENT MODE	DRAIN	SWITCHING	N-CHANNEL	MO-235	0.043 Ω	86 A	60 V	12.4 mJ	METAL-OXIDE SEMICONDUCTOR	-	-	-	-	-	-	-	-	-	1
BUK9Y43-60E Nexperia RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип BLF888B Anlielectronics Тип	Ampleon	RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4 Сборник данных Сравнение	Min.:1 Mult.:1	YES	4	SILICON	2	-	AMPLEON NETHERLANDS B V	-	-	CERAMIC, METAL-SEALED COFIRED	FLANGE MOUNT, R-CDFM-F4	RECTANGULAR	FLANGE MOUNT	Contact Manufacturer	-	-	-	-	-	-	-	EAR99	-	-	-	DUAL	FLAT	NOT SPECIFIED	unknown	NOT SPECIFIED	-	-	R-CDFM-F4	-	COMMON SOURCE, 2 ELEMENTS	ENHANCEMENT MODE	SOURCE	SWITCHING	N-CHANNEL	-	-	-	104 V	-	METAL-OXIDE SEMICONDUCTOR	-	-	-	-	-	-	ULTRA HIGH FREQUENCY BAND	-	-	-
BLF888B Ampleon RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип BC517 Anlielectronics Тип	North American Philips Discrete Products Div	Transistor, Сборник данных Сравнение	Min.:1 Mult.:1	NO	-	-	-	-	NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV	-	150 °C	-	-	-	-	Transferred	-	No	-	-	-	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	-	-	-	-	unknown	-	-	-	-	-	DARLINGTON	-	-	-	NPN	-	-	-	-	-	-	-	1 A	30000	-	-	-	-	-	-	-
BC517 North American Philips Discrete Products Div RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип BC161 Anlielectronics Тип	Freescale Semiconductor	Description: TRANSISTOR,BJT,PNP,60V V(BR)CEO,1A I(C),TO-205AD Сборник данных Сравнение	Min.:1 Mult.:1	NO	-	-	1	-	MOTOROLA SEMICONDUCTOR PRODUCTS	-	175 °C	-	,	-	-	Obsolete	-	No	50 MHz	-	-	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	-	-	-	-	unknown	-	-	-	-	-	SINGLE	-	-	-	PNP	-	-	-	-	-	-	3.7 W	1 A	40	-	-	-	-	-	-	-
BC161 Freescale Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип BC161 Anlielectronics Тип	Infineon Technologies AG	Transistor Сборник данных Сравнение	Min.:1 Mult.:1	NO	-	-	1	-	INFINEON TECHNOLOGIES AG	-	175 °C	-	-	-	-	Obsolete	-	No	50 MHz	-	-	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	-	-	-	-	not_compliant	-	-	-	-	-	SINGLE	-	-	-	PNP	-	-	-	-	-	-	3.7 W	1 A	40	-	-	-	-	-	-	-
BC161 Infineon Technologies AG RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип BC161 Anlielectronics Тип	TT Electronics Power and Hybrid / Semelab Limited	Description: TRANSISTOR,BJT,PNP,60V V(BR)CEO,1A I(C),TO-205AD Сборник данных Сравнение	Min.:1 Mult.:1	NO	-	-	1	-	SEMELAB LTD	-	175 °C	-	,	-	-	Active	-	-	50 MHz	-	-	-	-	EAR99	-	-	-	-	-	-	compliant	-	-	-	-	-	SINGLE	-	-	-	PNP	-	-	-	-	-	-	3.7 W	1 A	40	-	-	-	-	-	-	-
BC161 TT Electronics Power and Hybrid / Semelab Limited RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип SST113 Anlielectronics Тип	Calogic Inc	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC PACKAGE-3 Сборник данных Сравнение	Min.:1 Mult.:1	YES	3	SILICON	1	-	CALOGIC LLC	-	135 °C	PLASTIC/EPOXY	PLASTIC PACKAGE-3	RECTANGULAR	SMALL OUTLINE	Active	-	No	-	-	-	-	No	EAR99	-	LOW INSERTION LOSS	8541.21.00.95	DUAL	GULL WING	NOT SPECIFIED	compliant	NOT SPECIFIED	3	-	R-PDSO-G3	Not Qualified	SINGLE	DEPLETION MODE	-	SWITCHING	N-CHANNEL	-	100 Ω	-	-	-	JUNCTION	0.36 W	-	-	-	-	-	-	-	-	-
SST113 Calogic Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип SST113 Anlielectronics Тип	Sipex Corporation	Description: Transistor, Сборник данных Сравнение	Min.:1 Mult.:1	YES	-	-	-	-	SIPEX CORP	-	135 °C	-	-	-	-	Obsolete	-	No	-	-	-	e0	-	EAR99	TIN LEAD	-	-	-	-	240	unknown	-	-	-	-	-	-	-	-	-	N-CHANNEL	-	-	-	-	-	JUNCTION	0.36 W	-	-	-	-	-	-	-	-	1
SST113 Sipex Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип SST113 Anlielectronics Тип	Linear Integrated Systems	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, SOT-23, 3 PIN Сборник данных Сравнение	Min.:1 Mult.:1	YES	3	SILICON	1	-	LINEAR INTEGRATED SYSTEMS INC	-	135 °C	PLASTIC/EPOXY	-	RECTANGULAR	SMALL OUTLINE	Contact Manufacturer	SOT-23	Yes	-	-	-	e3	Yes	EAR99	MATTE TIN	-	-	DUAL	GULL WING	-	compliant	-	3	-	R-PDSO-G3	Not Qualified	SINGLE	DEPLETION MODE	-	SWITCHING	N-CHANNEL	-	100 Ω	-	-	-	JUNCTION	0.36 W	-	-	-	-	5 pF	-	-	-	1
SST113 Linear Integrated Systems RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IRFR9N20D Anlielectronics Тип	Infineon Technologies AG	Power Field-Effect Transistor, 9.4A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 Сборник данных Сравнение	Min.:1 Mult.:1	YES	2	SILICON	1	9.4 A	INFINEON TECHNOLOGIES AG	-	175 °C	PLASTIC/EPOXY	PLASTIC, DPAK-3	RECTANGULAR	SMALL OUTLINE	Obsolete	-	No	-	-	-	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	-	SINGLE	GULL WING	240	compliant	30	-	-	R-PSSO-G2	Not Qualified	SINGLE WITH BUILT-IN DIODE	ENHANCEMENT MODE	DRAIN	SWITCHING	N-CHANNEL	TO-252AA	0.38 Ω	38 A	200 V	100 mJ	METAL-OXIDE SEMICONDUCTOR	-	-	-	-	-	-	-	-	-	1
IRFR9N20D Infineon Technologies AG RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип APT10050JN Anlielectronics Тип	Advanced Power Technology	Power Field-Effect Transistor, 20.5A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Сборник данных Сравнение	Min.:1 Mult.:1	NO	4	SILICON	1	20.5 A	ADVANCED POWER TECHNOLOGY INC	-	150 °C	PLASTIC/EPOXY	ISOTOP-4	RECTANGULAR	FLANGE MOUNT	Obsolete	-	Yes	-	105 ns	60 ns	-	-	EAR99	-	-	8541.29.00.95	UPPER	UNSPECIFIED	NOT SPECIFIED	unknown	NOT SPECIFIED	-	UL RECOGNIZED	R-PUFM-X4	Not Qualified	SINGLE WITH BUILT-IN DIODE	ENHANCEMENT MODE	ISOLATED	SWITCHING	N-CHANNEL	-	0.5 Ω	82 A	1000 V	-	METAL-OXIDE SEMICONDUCTOR	520 W	-	-	-	-	350 pF	-	-	520 W	-
APT10050JN Advanced Power Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Discrete Semiconductor Products

Transistors - Special Purpose definition: Transistors - Special Purpose Product Listing: JANTX2N6782,IRF630S,IRF630S,AP6679GH,FQPF8N60C.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - Special Purpose has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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