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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Mounting Type | Package / Case | Supplier Device Package | Current - Average Rectified (Io) (per Diode) | Lead Free Status / RoHS Status | Mfr | Package | Product Status | Rad Hardened | Series | Part Status | Speed | Diode Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Voltage - DC Reverse (Vr) (Max) | Diode Configuration | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипG3S06504BAnlielectronics Тип | Global Power Technology-GPT |
SIC SCHOTTKY DIODE 650V 4A 3-PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247AB | 9A (DC) | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 4 A | -55°C ~ 175°C | 650 V | 1 Pair Common Cathode | 0 ns | ||
| G3S06504B | |||||||||||||||||||||||||
| | Mfr. ТипG5S12016BAnlielectronics Тип | Global Power Technology-GPT |
SIC SCHOTTKY DIODE 1200V 16A 3-P
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247AB | 27.9A (DC) | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 8 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
| G5S12016B | |||||||||||||||||||||||||
| | Mfr. ТипG3S06508BAnlielectronics Тип | Global Power Technology-GPT |
SIC SCHOTTKY DIODE 650V 8A 3-PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247AB | 14A (DC) | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 8 A | -55°C ~ 175°C | 650 V | 1 Pair Common Cathode | 0 ns | ||
| G3S06508B | |||||||||||||||||||||||||
| | Mfr. ТипG4S12040BMAnlielectronics Тип | Global Power Technology-GPT |
SIC SCHOTTKY DIODE 1200V 40A 3-P
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247AB | 64.5A (DC) | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 30 μA @ 1200 V | 1.6 V @ 20 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
| G4S12040BM | |||||||||||||||||||||||||
| | Mfr. ТипG5S12040BAnlielectronics Тип | Global Power |
Silicon Carbide Power Schottky Barrier Diode
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247AB | 62A (DC) | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 20 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
| G5S12040B | |||||||||||||||||||||||||
| | Mfr. ТипG4S12020BMAnlielectronics Тип | Global Power |
G4S12020BM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247AB | 33.2A (DC) | -- | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | * | Active | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 30 µA @ 1200 V | 1.6 V @ 10 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
| G4S12020BM | |||||||||||||||||||||||||
| | Mfr. ТипG5S12040BMAnlielectronics Тип | Global Power |
G5S12040BM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247AB | 62A (DC) | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 20 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
| G5S12040BM | |||||||||||||||||||||||||
| | Mfr. ТипG3S12010BMAnlielectronics Тип | Global Power |
G3S12010BM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247AB | 19.8A (DC) | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 5 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
| G3S12010BM | |||||||||||||||||||||||||
| | Mfr. ТипG5S12020BMAnlielectronics Тип | Global Power |
G5S12020BM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247AB | 33A (DC) | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 30 µA @ 1200 V | 1.7 V @ 10 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
| G5S12020BM | |||||||||||||||||||||||||
| | Mfr. ТипG5S12040PPAnlielectronics Тип | Global Power |
Silicon Carbide Power Schottky Barrier Diode
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-2 | TO-247AC | 115A (DC) | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 100 µA @ 1200 V | 1.7 V @ 40 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Anode | 0 ns | ||
| G5S12040PP | |||||||||||||||||||||||||
| | Mfr. ТипG3S12020BAnlielectronics Тип | Global Power |
1200V/20A Silicon Carbide Power Schottky Barrier Diode
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-2 | TO-247AC | 37A (DC) | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | No | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 10 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
| G3S12020B | |||||||||||||||||||||||||
| | Mfr. ТипG3S17020BAnlielectronics Тип | Global Power |
1700V/20A Silicon Carbide Power Schottky Barrier Diode
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247AB | 24A (DC) | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 100 µA @ 1700 V | 1.7 V @ 10 A | -55°C ~ 175°C | 1700 V | 1 Pair Common Cathode | 0 ns | ||
| G3S17020B | |||||||||||||||||||||||||
| | Mfr. ТипG3S06512BAnlielectronics Тип | Global Power |
650V/ 12A Silicon Carbide Power Schottky Barrier Diode
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247AB | 27A (DC) | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 6 A | -55°C ~ 175°C | 650 V | 1 Pair Common Cathode | 0 ns | ||
| G3S06512B | |||||||||||||||||||||||||
| | Mfr. ТипG3S06510BAnlielectronics Тип | Global Power |
650V/ 10A Silicon Carbide Power Schottky Barrier Diode
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247AB | 27A (DC) | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | No | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 5 A | -55°C ~ 175°C | 650 V | 1 Pair Common Cathode | 0 ns | ||
| G3S06510B | |||||||||||||||||||||||||
| | Mfr. ТипG3S06506BAnlielectronics Тип | Global Power |
650V/ 6A Silicon Carbide Power Schottky Barrier Diode
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247AB | 14A (DC) | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 3 A | -55°C ~ 175°C | 650 V | 1 Pair Common Cathode | 0 ns | ||
| G3S06506B | |||||||||||||||||||||||||
| | Mfr. ТипG3S06504BAnlielectronics Тип | Global Power |
650V/ 4A Silicon Carbide Power Schottky Barrier Diode
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247AB | 9A (DC) | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 4 A | -55°C ~ 175°C | 650 V | 1 Pair Common Cathode | 0 ns | ||
| G3S06504B | |||||||||||||||||||||||||
| | Mfr. ТипG3S12010BAnlielectronics Тип | Global Power |
1200V/10A Silicon Carbide Power Schottky Barrier Diode
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247AB | 39A (DC) | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | No | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 5 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
| G3S12010B | |||||||||||||||||||||||||
| | Mfr. ТипG3S12040BAnlielectronics Тип | Global Power |
1200V/40A Silicon Carbide Power Schottky Barrier Diode
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247AB | 64.5A (DC) | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 15 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
| G3S12040B | |||||||||||||||||||||||||
| | Mfr. ТипG5S12010BMAnlielectronics Тип | Global Power |
G5S12010BM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247AB | 19.35A (DC) | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 5 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
| G5S12010BM | |||||||||||||||||||||||||
| | Mfr. ТипG3S12010BAnlielectronics Тип | Global Power Technology-GPT |
SIC SCHOTTKY DIODE 1200V 10A 3-P
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247AB | 39A (DC) | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 5 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
| G3S12010B |
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