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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Number of Pins Weight Transistor Element Material Manufacturer Package Identifier Collector- Emitter Voltage VCEO Max Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Factory Pack QuantityFactory Pack Quantity Maximum Gate Emitter Voltage Maximum Operating Temperature Minimum Operating Temperature Mounting Styles Number of Elements Pd - Power Dissipation RoHS Test Conditions Turn Off Delay Time Unit Weight Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Terminal Finish Additional Feature HTS Code Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Polarity Configuration Element Configuration Power Dissipation Case Connection Input Type Turn On Delay Time Power - Max Transistor Application Rise Time Drain to Source Voltage (Vdss) Polarity/Channel Type Collector Emitter Voltage (VCEO) Max Collector Current Reverse Recovery Time Continuous Drain Current (ID) JEDEC-95 Code Voltage - Collector Emitter Breakdown (Max) Max Breakdown Voltage Turn On Time Vce(on) (Max) @ Vge, Ic Max Junction Temperature (Tj) Continuous Collector Current Turn Off Time-Nom (toff) IGBT Type Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Gate-Emitter Voltage-Max Gate-Emitter Thr Voltage-Max Fall Time-Max (tf) Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
STMicroelectronics STGB3NC120HDT4
Mfr. Тип
STGB3NC120HDT4
Anlielectronics Тип

STMicroelectronics
IGBT Transistors IGBT 1200V 7A PowerMESH Ultrafast
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 8 Weeks ACTIVE (Last Updated: 6 months ago) Tin Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 3 2.000002g SILICON D2Pak - 1.2kV 2.3V - - - - - - 1 - - 800V, 3A, 10 Ω, 15V 118 ns - -55°C~150°C TJ Tape & Reel (TR) - PowerMESH™ e3 - Active 1 (Unlimited) 2 - EAR99 - LOW CONDUCTION LOSS - - 75W - GULL WING 245 - - 30 STGB3 - R-PSSO-G2 - - Single 75W COLLECTOR Standard 15 ns - POWER CONTROL - - N-CHANNEL 1.2kV 14A 51 ns - - 1200V 1.2kV 18.5 ns 2.8V @ 15V, 3A 150°C 14A 680 ns - 24nC 20A 15ns/118ns 236μJ (on), 290μJ (off) - - - 4.83mm - - No - ROHS3 Compliant Lead Free
    STGB3NC120HDT4
    STGB3NC120HDT4

    STMicroelectronics
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Infineon Technologies IRG4PC60FPBF
    Mfr. Тип
    IRG4PC60FPBF
    Anlielectronics Тип

    		Infineon Technologies
    IGBT 600V 90A 520W TO247AC
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 14 Weeks - - Through Hole Through Hole TO-247-3 3 - SILICON - - 600V 1.8V - - - - - - 1 - - 480V, 60A, 5 Ω, 15V 310 ns - -55°C~150°C TJ Bulk 2000 - - - Last Time Buy 1 (Unlimited) 3 - EAR99 - FAST - 600V 520W - - - - 90A - - - - - - Single 520W COLLECTOR Standard 42 ns - POWER CONTROL 39ns - N-CHANNEL 1.8V 90A - - TO-247AC - - 105 ns 1.8V @ 15V, 60A - - 770 ns - 290nC 360A 42ns/310ns 300μJ (on), 4.6mJ (off) 20V 6V - 20.7mm 15.87mm 5.3086mm No Unknown ROHS3 Compliant Lead Free
      IRG4PC60FPBF
      IRG4PC60FPBF

      Infineon Technologies
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      STMicroelectronics STGP19NC60KD
      Mfr. Тип
      STGP19NC60KD
      Anlielectronics Тип

      		STMicroelectronics
      Trans IGBT Chip N-CH 600V 35A 3-Pin(3 Tab) TO-220 T/R
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 8 Weeks ACTIVE (Last Updated: 8 months ago) Tin Through Hole Through Hole TO-220-3 - 6.000006g SILICON - - 600V - - - - - - - 1 - - 480V, 12A, 10 Ω, 15V 105 ns - -55°C~150°C TJ Tube - PowerMESH™ - - Active 1 (Unlimited) 3 - EAR99 - - - - 125W - - - - - - STGP19 3 R-PSFM-T3 - - Single - - Standard 30 ns 125W POWER CONTROL - - N-CHANNEL 600V 35A 31 ns - TO-220AB - - 38 ns 2.75V @ 15V, 12A - - 270 ns - 55nC 75A 30ns/105ns 165μJ (on), 255μJ (off) 20V 6.5V - 9.15mm 10.4mm 4.6mm No - ROHS3 Compliant Lead Free
        STGP19NC60KD
        STGP19NC60KD

        STMicroelectronics
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        ON Semiconductor HGTP12N60A4D
        Mfr. Тип
        HGTP12N60A4D
        Anlielectronics Тип

        		ON Semiconductor
        IGBT 600V 54A 167W TO220AB
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 5 Weeks ACTIVE, NOT REC (Last Updated: 2 days ago) - Through Hole Through Hole TO-220-3 3 1.8g SILICON - - 600V 2V - - - - - - 1 - - 390V, 12A, 10 Ω, 15V 96 ns - -55°C~150°C TJ Tube 2002 - e3 yes Not For New Designs 1 (Unlimited) 3 - EAR99 Tin (Sn) LOW CONDUCTION LOSS 8541.29.00.95 600V 167W - - - - 54A - HGTP12N60 - - - - Single 167W COLLECTOR Standard 17 ns - POWER CONTROL 8ns - N-CHANNEL 600V 54A 18 ns - - - - 33 ns 2.7V @ 15V, 12A - 54A 180 ns - 78nC 96A 17ns/96ns 55μJ (on), 50μJ (off) - - - 9.4mm 10.67mm 4.83mm No No SVHC ROHS3 Compliant Lead Free
          HGTP12N60A4D
          HGTP12N60A4D

          ON Semiconductor
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          STMicroelectronics STGP7NC60HD
          Mfr. Тип
          STGP7NC60HD
          Anlielectronics Тип

          		STMicroelectronics
          STMICROELECTRONICS STGP7NC60HD IGBT Single Transistor, 25 A, 2.5 V, 80 W, 600 V, TO-220, 3 Pins
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 8 Weeks ACTIVE (Last Updated: 8 months ago) - Through Hole Through Hole TO-220-3 3 2.299997g SILICON - - 600V 2.5V - - - - - - 1 - - 390V, 7A, 10 Ω, 15V 72 ns - -55°C~150°C TJ Tube - PowerMESH™ e3 - Active 1 (Unlimited) 3 - EAR99 Tin (Sn) - - 600V 80W - - - - 14A - STGP7 3 - - - Single 80W - Standard 18.5 ns - POWER CONTROL 7ns 600V N-CHANNEL 600V 25A 37ns 14A TO-220AB - - 25.5 ns 2.5V @ 15V, 7A - 14A 221 ns - 35nC 50A 18.5ns/72ns 95μJ (on), 115μJ (off) 20V 5.75V - 9.15mm 10.4mm 4.6mm No No SVHC ROHS3 Compliant Lead Free
            STGP7NC60HD
            STGP7NC60HD

            STMicroelectronics
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Infineon Technologies IRGB15B60KDPBF
            Mfr. Тип
            IRGB15B60KDPBF
            Anlielectronics Тип

            		Infineon Technologies
            IGBT 600V 31A 208W TO220AB
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 16 Weeks - - Through Hole Through Hole TO-220-3 3 6.000006g SILICON - - 600V 2.2V - - - - - - 1 - - 400V, 15A, 22 Ω, 15V 184 ns - -55°C~150°C TJ Tube 2004 - - - Obsolete 1 (Unlimited) 3 Through Hole EAR99 - ULTRA FAST - 600V 139W - - - - 31A - - - - - - Single 208W COLLECTOR Standard 34 ns - MOTOR CONTROL 16ns - N-CHANNEL 2.2V 31A 92 ns - TO-220AB - - 52 ns 2.2V @ 15V, 15A - - 231 ns NPT 56nC 62A 34ns/184ns 220μJ (on), 340μJ (off) 20V 5.5V - 15.24mm 10.54mm 4.69mm No No SVHC RoHS Compliant Lead Free
              IRGB15B60KDPBF
              IRGB15B60KDPBF

              Infineon Technologies
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Infineon Technologies IRG4PC30SPBF
              Mfr. Тип
              IRG4PC30SPBF
              Anlielectronics Тип

              		Infineon Technologies
              IGBT 600V 34A 100W TO247AC
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 14 Weeks - - Through Hole Through Hole TO-247-3 3 38.000013g SILICON - - 600V 1.6V - - - - - - 1 - - 480V, 18A, 23 Ω, 15V - - -55°C~150°C TJ Bulk 2003 - - - Last Time Buy 1 (Unlimited) 3 - EAR99 - - - 600V 100W SINGLE - - - 34A - - - - - - Dual 100W COLLECTOR Standard - - POWER CONTROL 19ns - N-CHANNEL 1.6V 34A - - TO-247AC - - 40 ns 1.6V @ 15V, 18A - - 1550 ns - 50nC 68A 22ns/540ns 260μJ (on), 3.45mJ (off) 20V 6V 590ns 20.2946mm 15.875mm 5.3086mm No No SVHC ROHS3 Compliant Lead Free
                IRG4PC30SPBF
                IRG4PC30SPBF

                Infineon Technologies
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                STMicroelectronics STGWA60H65DFB
                Mfr. Тип
                STGWA60H65DFB
                Anlielectronics Тип

                		STMicroelectronics
                Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 20 Weeks - - Through Hole Through Hole TO-247-3 3 - - - - 650V - - - - - - - - - - 400V, 60A, 10 Ω, 15V - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) - - EAR99 - - - - 375W - - NOT SPECIFIED - - NOT SPECIFIED STGWA60 - - - - Single - - Standard - 375W - - - - 2V 80A 60 ns - - - - - 2V @ 15V, 60A - - - Trench Field Stop 306nC 240A 66ns/210ns 1.59mJ (on), 900μJ (off) - - - - - - - - ROHS3 Compliant -
                  STGWA60H65DFB
                  STGWA60H65DFB

                  STMicroelectronics
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  ON Semiconductor FGY40T120SMD
                  Mfr. Тип
                  FGY40T120SMD
                  Anlielectronics Тип

                  		ON Semiconductor
                  IGBT 1200V 80A TO-247
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 6 Weeks ACTIVE (Last Updated: 1 week ago) - Through Hole Through Hole TO-247-3 - 7.629g - - - 1.2kV - - - - - - - - - - 600V, 40A, 10 Ω, 15V - - -55°C~175°C TJ Tube - - e3 yes Active 1 (Unlimited) - - EAR99 Tin (Sn) - 8541.29.00.95 - 882W - - NOT SPECIFIED not_compliant - NOT SPECIFIED - - - - - - - - Standard - 882W - - - - 2.4V 80A 65 ns - - 1200V - - 2.4V @ 15V, 40A - - - Trench Field Stop 370nC 160A 40ns/475ns 2.7mJ (on), 1.1mJ (off) - - - - - - - - ROHS3 Compliant -
                    FGY40T120SMD
                    FGY40T120SMD

                    ON Semiconductor
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    STMicroelectronics STGF3NC120HD
                    Mfr. Тип
                    STGF3NC120HD
                    Anlielectronics Тип

                    		STMicroelectronics
                    STMICROELECTRONICS - STGF3NC120HD - IGBT, N 1200V 3A TO-220FP
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 8 Weeks ACTIVE (Last Updated: 8 months ago) - Through Hole Through Hole TO-220-3 Full Pack 3 - SILICON - - 1.2kV 2.8V - - - - - - 1 - - 800V, 3A, 10 Ω, 15V - - -55°C~150°C TJ Tube - PowerMESH™ e3 - Active 1 (Unlimited) 3 - EAR99 Matte Tin (Sn) - annealed - - 1.2kV 25W - - - - 3A - STGF3 3 - - - Single 25W ISOLATED Standard - - GENERAL PURPOSE SWITCHING 3.5ns - N-CHANNEL 1.2kV 6A 51 ns - - 1200V - 18.5 ns 2.8V @ 15V, 3A - - 680 ns - 24nC 20A 15ns/118ns 236μJ (on), 290μJ (off) 20V 5V - 16.4mm 10.4mm 4.6mm No No SVHC ROHS3 Compliant Lead Free
                      STGF3NC120HD
                      STGF3NC120HD

                      STMicroelectronics
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      STMicroelectronics STGF14NC60KD
                      Mfr. Тип
                      STGF14NC60KD
                      Anlielectronics Тип

                      		STMicroelectronics
                      STMICROELECTRONICS STGF14NC60KD IGBT Single Transistor, 11 A, 2.5 V, 28 W, 600 V, TO-220FP, 3 Pins
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 8 Weeks ACTIVE (Last Updated: 8 months ago) - Through Hole Through Hole TO-220-3 Full Pack 3 2.299997g SILICON - - 600V 2V - - - - - - 1 - - 390V, 7A, 10 Ω, 15V 116 ns - -55°C~150°C TJ Tube - PowerMESH™ e3 - Active 1 (Unlimited) 3 - EAR99 Matte Tin (Sn) ULTRA FAST - 600V 28W - - - - 11A - STGF14 3 - - - Single 28W ISOLATED Standard 22.5 ns - POWER CONTROL 8.5ns - N-CHANNEL 600V 11A 37 ns - TO-220AB - - 31.5 ns 2.5V @ 15V, 7A - 7A 340 ns - 34.4nC 50A 22.5ns/116ns 82μJ (on), 155μJ (off) 20V 7V - 9.3mm 10.4mm 4.6mm No No SVHC ROHS3 Compliant Lead Free
                        STGF14NC60KD
                        STGF14NC60KD

                        STMicroelectronics
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        STMicroelectronics STGW40V60DF
                        Mfr. Тип
                        STGW40V60DF
                        Anlielectronics Тип

                        		STMicroelectronics
                        IGBT 600V 80A 283W TO247
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 20 Weeks - - Through Hole Through Hole TO-247-3 3 - - - - 600V 2.35V - - - - - - - - - 400V, 40A, 10 Ω, 15V - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) - - EAR99 - - - - 283W - - - - - - STGW40 - - - - Single 283W - Standard - - - - - - 600V 80A 41ns - - - - - 2.3V @ 15V, 40A - - - Trench Field Stop 226nC 160A 52ns/208ns 456μJ (on), 411μJ (off) - - - 20.15mm 15.75mm 5.15mm No - ROHS3 Compliant Lead Free
                          STGW40V60DF
                          STGW40V60DF

                          STMicroelectronics
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Atmel (Microchip Technology) APT80GA90B
                          Mfr. Тип
                          APT80GA90B
                          Anlielectronics Тип

                          		Atmel (Microchip Technology)
                          IGBT Transistors FG, IGBT, 900V, TO-247View in Development Tools Selector
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 - - - - - TO-247-3 - - - - 900 V - 2.5 V 145 A 1 - 30 V, + 30 V + 150 C - 55 C Through Hole - 625 W Details - - 1.340411 oz - Tube - - - - - - - - - - - - - - - - - - - - - - - - Single - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                            APT80GA90B
                            APT80GA90B

                            Atmel (Microchip Technology)
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            ON Semiconductor FGH40T120SMDL4
                            Mfr. Тип
                            FGH40T120SMDL4
                            Anlielectronics Тип

                            		ON Semiconductor
                            Trans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 T/R
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 6 Weeks ACTIVE (Last Updated: 4 days ago) - Through Hole Through Hole TO-247-4 3 6.289g - - - 1.2kV - - - - - - - - - - 600V, 40A, 10 Ω, 15V - - -55°C~175°C TJ Tube 2016 - e3 yes Active 1 (Unlimited) - - EAR99 Tin (Sn) - 8541.29.00.95 - 555W - - NOT SPECIFIED - - NOT SPECIFIED - - - - - Single - - Standard - 555W - - - - 2.4V 80A 65 ns - - 1200V - - 2.4V @ 15V, 40A - - - Trench Field Stop 370nC 160A 44ns/464ns 2.24mJ (on), 1.02mJ (off) - - - - - - - - ROHS3 Compliant -
                              FGH40T120SMDL4
                              FGH40T120SMDL4

                              ON Semiconductor
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Infineon Technologies IGW50N65H5FKSA1
                              Mfr. Тип
                              IGW50N65H5FKSA1
                              Anlielectronics Тип

                              		Infineon Technologies
                              IGBT Transistors IGBT PRODUCTS
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 26 Weeks - - Through Hole Through Hole TO-247-3 3 - - - - 650V 1.65V - - - - - - - - - 400V, 25A, 12 Ω, 15V - - -40°C~175°C TJ Tube 2008 TrenchStop® e3 yes Active 1 (Unlimited) - - EAR99 Tin (Sn) - - - 305W - - NOT SPECIFIED - - NOT SPECIFIED - - - - - Single 305W - Standard - - - - - - 1.65V 80A - - - - - - 2.1V @ 15V, 50A - - - - 120nC 150A 21ns/180ns 520μJ (on), 180μJ (off) - - - - - - - Unknown ROHS3 Compliant Lead Free
                                IGW50N65H5FKSA1
                                IGW50N65H5FKSA1

                                Infineon Technologies
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                ON Semiconductor HGTP12N60C3D
                                Mfr. Тип
                                HGTP12N60C3D
                                Anlielectronics Тип

                                		ON Semiconductor
                                IGBT 600V 24A 104W TO220AB
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 5 Weeks ACTIVE, NOT REC (Last Updated: 2 days ago) - Through Hole Through Hole TO-220-3 3 1.8g SILICON - - 600V 1.65V - - - - - - 1 - - - 270 ns - -40°C~150°C TJ Tube 2011 - e3 yes Not For New Designs 1 (Unlimited) 3 - EAR99 Tin (Sn) LOW CONDUCTION LOSS 8541.29.00.95 600V 104W - - - - 24A - HGTP12N60 - - NPN - Single 104W COLLECTOR Standard 28 μs - MOTOR CONTROL - - - 600V 24A 40 ns - TO-220AB - - 48 ns 2.2V @ 15V, 15A - - 480 ns - 48nC 96A - 380μJ (on), 900μJ (off) - - - - - - No No SVHC ROHS3 Compliant Lead Free
                                  HGTP12N60C3D
                                  HGTP12N60C3D

                                  ON Semiconductor
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  ON Semiconductor NGTB40N65FL2WG
                                  Mfr. Тип
                                  NGTB40N65FL2WG
                                  Anlielectronics Тип

                                  		ON Semiconductor
                                  ON SEMICONDUCTOR NGTB40N65FL2WGIGBT Single Transistor, 80 A, 1.7 V, 366 W, 650 V, TO-247, 3 Pins
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 21 Weeks ACTIVE (Last Updated: 2 days ago) - Through Hole Through Hole TO-247-3 3 38.000013g - - - 650V 2.1V - - - - - - - - - 400V, 40A, 10 Ω, 15V - - -55°C~175°C TJ Tube 2011 - - yes Active 1 (Unlimited) - - - - - - - 366W - - - - - - - - - - - Single - - Standard - 366W - - - - 650V 80A 72 ns - - - - - 2V @ 15V, 40A - - - Trench Field Stop 170nC 160A 84ns/177ns 970μJ (on), 440μJ (off) - - - 21.08mm 16.26mm 5.3mm - No SVHC ROHS3 Compliant Lead Free
                                    NGTB40N65FL2WG
                                    NGTB40N65FL2WG

                                    ON Semiconductor
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    STMicroelectronics STGWA25M120DF3
                                    Mfr. Тип
                                    STGWA25M120DF3
                                    Anlielectronics Тип

                                    		STMicroelectronics
                                    STMICROELECTRONICS STGWA25M120DF3 IGBT Single Transistor, 50 A, 1.85 V, 375 W, 1.2 kV, TO-247, 3 Pins
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 30 Weeks ACTIVE (Last Updated: 7 months ago) - Through Hole Through Hole TO-247-3 3 38.000013g - - - 1.2kV 1.85V - - - - - - - - - 600V, 25A, 15 Ω, 15V - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) - - EAR99 - - - - 375W - - NOT SPECIFIED - - NOT SPECIFIED STGWA25 - - - - Single - - Standard - 375W - - - N-CHANNEL 1.2kV 50A 265 ns - - 1200V - - 2.3V @ 15V, 25A - - - Trench Field Stop 85nC 100A 28ns/150ns 850μJ (on), 1.3mJ (off) 20V 7V - - - - - No SVHC ROHS3 Compliant -
                                      STGWA25M120DF3
                                      STGWA25M120DF3

                                      STMicroelectronics
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      Infineon Technologies IRGB30B60KPBF
                                      Mfr. Тип
                                      IRGB30B60KPBF
                                      Anlielectronics Тип

                                      		Infineon Technologies
                                      IGBT 600V 78A 370W TO220AB
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 16 Weeks - - Through Hole Through Hole TO-220-3 3 6.000006g SILICON - - 600V 2.35V - - - - - - 1 - - 400V, 30A, 10 Ω, 15V - - -55°C~175°C TJ Tube 2004 - - - Last Time Buy 1 (Unlimited) 3 Through Hole EAR99 - - - 600V 370W - - - - 78A - - - - - - Single 370W COLLECTOR Standard - - MOTOR CONTROL 28ns - N-CHANNEL 2.35V 78A - - TO-220AB - - 74 ns 2.35V @ 15V, 30A - - 237 ns NPT 102nC 120A 46ns/185ns 350μJ (on), 825μJ (off) 20V 5.5V 42ns 16.51mm 10.6426mm 4.82mm No No SVHC ROHS3 Compliant Lead Free
                                        IRGB30B60KPBF
                                        IRGB30B60KPBF

                                        Infineon Technologies
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        Infineon Technologies IRGPS40B120UDP
                                        Mfr. Тип
                                        IRGPS40B120UDP
                                        Anlielectronics Тип

                                        		Infineon Technologies
                                        IGBT 1200V 80A 595W SUPER247
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 13 Weeks - - Through Hole Through Hole TO-274AA 3 - SILICON - - 1.2kV 3.39V - - - - - - 1 - - 600V, 40A, 4.7 Ω, 15V 365 ns - -55°C~150°C TJ Bulk 2004 - - - Obsolete 1 (Unlimited) 3 - EAR99 - - - 1.2kV 595W - - - - 80A - - - - - - Single 595W COLLECTOR Standard 99 ns - MOTOR CONTROL 39ns - N-CHANNEL 3.7V 80A 180 ns - - 1200V - 115 ns 3.7V @ 15V, 50A - - 357 ns NPT 340nC 160A - 1.4mJ (on), 1.65mJ (off) 20V 6V - 20.8mm 16.1mm 5.3mm No No SVHC RoHS Compliant Lead Free
                                          IRGPS40B120UDP
                                          IRGPS40B120UDP

                                          Infineon Technologies
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

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