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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Number of Terminals Transistor Element Material Base Product Number Collector- Emitter Voltage VCEO Max Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Continuous Collector Current Ic Max Current-Collector (Ic) (Max) Factory Pack QuantityFactory Pack Quantity Gate-Emitter Leakage Current Ihs Manufacturer Manufacturer Part Number Maximum Gate Emitter Voltage Maximum Operating Temperature Mfr Minimum Operating Temperature Mounting Styles Number of Elements Operating Temperature-Max Package Package Body Material Package Description Package Shape Package Style Part Life Cycle Code Part Package Code Pd - Power Dissipation Product Status Reflow Temperature-Max (s) Risk Rank RoHS Rohs Code Test Conditions Tradename Turn Off Delay Time Turn-off Time-Nom (toff) Turn-on Time-Nom (ton) Unit Weight Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Terminal Finish Additional Feature HTS Code Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Qualification Status Configuration Element Configuration Power Dissipation Case Connection Input Type Turn On Delay Time Power - Max Clamping Voltage Transistor Application Halogen Free Rise Time Polarity/Channel Type Collector Emitter Voltage (VCEO) Max Collector Current Operating Temperature Range Reverse Recovery Time JEDEC-95 Code Voltage - Collector Emitter Breakdown (Max) Input Capacitance Max Breakdown Voltage Turn On Time Vce(on) (Max) @ Vge, Ic Collector Current-Max (IC) Continuous Collector Current Turn Off Time-Nom (toff) IGBT Type Collector-Emitter Voltage-Max Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Gate-Emitter Voltage-Max Gate-Emitter Thr Voltage-Max Fall Time-Max (tf) Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
ON Semiconductor ISL9V2040D3ST
Mfr. Тип
ISL9V2040D3ST
Anlielectronics Тип

ON Semiconductor
IGBT 430V 10A 130W TO252AA
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 7 Weeks - - Surface Mount Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 - 3 - 260.37mg - SILICON - - 430V - - - - - - - - - - - - - 1 - - - - - - - - - - - - - - 300V, 1k Ω, 5V - - - - - -40°C~175°C TJ Tape & Reel (TR) 2017 EcoSPARK® e3 yes Active 1 (Unlimited) 2 - EAR99 Tin (Sn) - 8541.29.00.95 400V 130W - GULL WING - - 10A - ISL9V2040 - R-PSSO-G2 - - Single 130W COLLECTOR Logic - - 400V AUTOMOTIVE IGNITION - 2.17μs N-CHANNEL 1.9V 10A - - TO-252AA - - 430V 2780 ns 1.9V @ 4V, 6A - - 6000 ns - - 12nC - -/3.64μs - 12V - - 2.39mm 6.73mm 6.22mm No - ROHS3 Compliant Lead Free
    ISL9V2040D3ST
    ISL9V2040D3ST

    ON Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    ON Semiconductor FGH60T65SQD-F155
    Mfr. Тип
    FGH60T65SQD-F155
    Anlielectronics Тип

    		ON Semiconductor
    650V 60A FS4 TRENCH IGBT
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 4 Weeks ACTIVE (Last Updated: 1 day ago) - - Through Hole TO-247-3 - - - - - - - - - - - - 120A - - - - - - - - - - - - - - - - - - - - - - - - 400V, 15A, 4.7 Ω, 15V - - - - - -55°C~175°C TJ - - - - yes Active Not Applicable - - - - - - - - - - - - - - - - - - - - - - Standard - 333W - - - - - - - - 34.6ns - 650V - - - 2.1V @ 15V, 60A - - - Trench Field Stop - 79nC 240A 20.8ns/102ns 227μJ (on), 100μJ (off) - - - - - - - - RoHS Compliant -
      FGH60T65SQD-F155
      FGH60T65SQD-F155

      ON Semiconductor
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Infineon Technologies IRG4BC30UPBF
      Mfr. Тип
      IRG4BC30UPBF
      Anlielectronics Тип

      		Infineon Technologies
      IGBT 600V 23A 100W TO220AB
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 16 Weeks - - Through Hole Through Hole TO-220-3 - 3 - - - SILICON - - 600V 2.1V - - - - - - - - - - - - 1 - - - - - - - - - - - - - - 480V, 12A, 23 Ω, 15V - 78 ns - - - -55°C~150°C TJ Tube 2000 - - - Last Time Buy 1 (Unlimited) 3 Through Hole EAR99 - ULTRA FAST SWITCHING - 600V 100W - - - - 23A - - - - - - Single 100W COLLECTOR Standard 17 ns - - POWER CONTROL - 9.6ns N-CHANNEL 2.1V 23A - - TO-220AB - 1.1nF - 33 ns 2.1V @ 15V, 12A - - 320 ns - - 50nC 92A 17ns/78ns 160μJ (on), 200μJ (off) 20V 6V 150ns 16.51mm 10.668mm 4.826mm No No SVHC ROHS3 Compliant Contains Lead, Lead Free
        IRG4BC30UPBF
        IRG4BC30UPBF

        Infineon Technologies
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        ON Semiconductor HGTP7N60A4
        Mfr. Тип
        HGTP7N60A4
        Anlielectronics Тип

        		ON Semiconductor
        IGBT 600V 34A 125W TO220AB
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 44 Weeks ACTIVE, NOT REC (Last Updated: 2 days ago) - Through Hole Through Hole TO-220-3 - 3 - 1.8g - SILICON - - 600V 1.9V - - - - - - - - - - - - 1 - - - - - - - - - - - - - - 390V, 7A, 25 Ω, 15V - 100 ns - - - -55°C~150°C TJ Tube 2003 - e3 yes Not For New Designs 1 (Unlimited) 3 - EAR99 Tin (Sn) LOW CONDUCTION LOSS 8541.29.00.95 600V 125W - - - - 34A - HGTP7N60 - - - - Single 125W COLLECTOR Standard 11 ns - - POWER CONTROL - 11ns N-CHANNEL 600V 34A - - TO-220AB - - - 17 ns 2.7V @ 15V, 7A - - 205 ns - - 37nC 56A 11ns/100ns 55μJ (on), 60μJ (off) - - - 9.02mm 10.28mm 4.57mm No No SVHC ROHS3 Compliant Lead Free
          HGTP7N60A4
          HGTP7N60A4

          ON Semiconductor
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Infineon Technologies IRGS8B60KPBF
          Mfr. Тип
          IRGS8B60KPBF
          Anlielectronics Тип

          		Infineon Technologies
          IGBT 600V 28A 167W D2PAK
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 13 Weeks - - Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - 3 - - - SILICON - - 600V 2.2V - - - - - - - - - - - - 1 - - - - - - - - - - - - - - 400V, 8A, 50 Ω, 15V - - - - - -55°C~175°C TJ Tube 2004 - e3 - Obsolete 1 (Unlimited) 2 - EAR99 Matte Tin (Sn) - with Nickel (Ni) barrier - - 600V 167W - GULL WING 260 - 28A 30 IRGS8B60KPBF - R-PSSO-G2 - - Single 167W COLLECTOR Standard - - - MOTOR CONTROL - 22ns N-CHANNEL 2.2V 28A - - - - - - 43 ns 2.2V @ 15V, 8A - - 220 ns NPT - 29nC 34A 23ns/140ns 160μJ (on), 160μJ (off) 20V 5.5V 56ns 4.572mm 10.668mm 9.65mm No - RoHS Compliant Lead Free
            IRGS8B60KPBF
            IRGS8B60KPBF

            Infineon Technologies
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            ON Semiconductor FGP15N60UNDF
            Mfr. Тип
            FGP15N60UNDF
            Anlielectronics Тип

            		ON Semiconductor
            IGBT Transistors 600V 15A NPT IGBT
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 4 Weeks ACTIVE (Last Updated: 1 week ago) - Through Hole Through Hole TO-220-3 - 3 - 1.8g - SILICON - - 600V 2.7V - - - - - - - - - - - - 1 - - - - - - - - - - - - - - 400V, 15A, 10 Ω, 15V - - - - - -55°C~150°C TJ Tube 2013 - e3 yes Active 1 (Unlimited) 3 - EAR99 Tin (Sn) - 8541.29.00.95 - 178W - - - - - - - - - - - Single 178W - Standard - - - MOTOR CONTROL - - N-CHANNEL 600V 30A - 82.4ns TO-220AB - - - 18.8 ns 2.7V @ 15V, 15A - - 69.8 ns NPT - 43nC 45A 9.3ns/54.8ns 370μJ (on), 67μJ (off) 20V 8.5V 12.8ns 16.51mm 10.67mm 4.83mm No - ROHS3 Compliant Lead Free
              FGP15N60UNDF
              FGP15N60UNDF

              ON Semiconductor
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              STMicroelectronics STGB30M65DF2
              Mfr. Тип
              STGB30M65DF2
              Anlielectronics Тип

              		STMicroelectronics
              IGBT 650V 30A D2PAK
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 30 Weeks ACTIVE (Last Updated: 7 months ago) - Surface Mount Surface Mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB - 3 - - - - - - 650V 1.55V - - - - - - - - - - - - - - - - - - - - - - - - - - - 400V, 30A, 10 Ω, 15V - - - - - -55°C~175°C TJ Cut Tape (CT) - - - - Active 1 (Unlimited) - - EAR99 - - - - 258W - - NOT SPECIFIED - - NOT SPECIFIED STGB30 - - - - Single - - Standard - 258W - - - - - 2V 60A - 140 ns - - - 650V - 2V @ 15V, 30A - - - Trench Field Stop - 80nC 120A 31.6ns/115ns 300μJ (on), 960μJ (off) - - - - - - - No SVHC ROHS3 Compliant -
                STGB30M65DF2
                STGB30M65DF2

                STMicroelectronics
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Infineon Technologies IRG4PSC71KDPBF
                Mfr. Тип
                IRG4PSC71KDPBF
                Anlielectronics Тип

                		Infineon Technologies
                IGBT 600V 85A 350W SUPER247
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 13 Weeks - - Through Hole Through Hole TO-274AA - 3 - - - SILICON - - 600V 1.83V - - - - - - - - - - - - 1 - - - - - - - - - - - - - - 480V, 60A, 5 Ω, 15V - 282 ns - - - -55°C~150°C TJ Bulk 1998 - e3 - Last Time Buy 1 (Unlimited) 3 Through Hole EAR99 Matte Tin (Sn) - with Nickel (Ni) barrier LOW CONDUCTION LOSS - 600V 350W - - - - 85A - - - - - - Single 350W COLLECTOR Standard 82 ns - - MOTOR CONTROL - 107ns N-CHANNEL 2.3V 85A - 82 ns - - - - 191 ns 2.3V @ 15V, 60A - - 517 ns - - 340nC 200A 82ns/282ns 3.95mJ (on), 2.33mJ (off) - - - 20.8mm 16.0782mm 5.3mm No No SVHC ROHS3 Compliant Lead Free
                  IRG4PSC71KDPBF
                  IRG4PSC71KDPBF

                  Infineon Technologies
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  STMicroelectronics STGP30H60DFB
                  Mfr. Тип
                  STGP30H60DFB
                  Anlielectronics Тип

                  		STMicroelectronics
                  TRENCH GATE FIELD-STOP IGBT, HB
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 20 Weeks - - Through Hole Through Hole TO-220-3 - - - - - SILICON - - 600V - - - - - - - - - - - - - 1 - - - - - - - - - - - - - - 400V, 30A, 10 Ω, 15V - - - - - -55°C~175°C TJ Tube - - - - Active 1 (Unlimited) 3 - EAR99 - - - - 260W SINGLE - NOT SPECIFIED - - NOT SPECIFIED STGP30 - R-PSFM-T3 - SINGLE WITH BUILT-IN DIODE - - COLLECTOR Standard - 260W - POWER CONTROL - - N-CHANNEL 2V 60A - 53 ns TO-220AB - - - 51.1 ns 2V @ 15V, 30A - - 223 ns Trench Field Stop - 149nC 120A 37ns/146ns 383μJ (on), 293μJ (off) - - - - - - - - ROHS3 Compliant -
                    STGP30H60DFB
                    STGP30H60DFB

                    STMicroelectronics
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Infineon Technologies IKW40N65ES5XKSA1
                    Mfr. Тип
                    IKW40N65ES5XKSA1
                    Anlielectronics Тип

                    		Infineon Technologies
                    Trans IGBT Chip N-CH 650V 79A 230000mW 3-Pin(3 Tab) TO-247 Tube
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 16 Weeks - - Through Hole Through Hole TO-247-3 - 3 - - - SILICON - - 650V - - - - - - - - - - - - - 1 - - - - - - - - - - - - - - 400V, 40A, 10 Ω, 15V - - - - - -40°C~175°C TJ Tube 2008 TrenchStop™ - yes Active 1 (Unlimited) 3 - - - - - - 230W - - NOT SPECIFIED - - NOT SPECIFIED - - - - - Single - COLLECTOR Standard - 230W - POWER CONTROL Halogen Free - N-CHANNEL 650V 79A - 73 ns - - - - 36 ns 1.7V @ 15V, 40A - - 204 ns Trench - 95nC 160A 19ns/130ns 860μJ (on), 400μJ (off) - - - - - - - - ROHS3 Compliant Lead Free
                      IKW40N65ES5XKSA1
                      IKW40N65ES5XKSA1

                      Infineon Technologies
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Infineon Technologies IRGB10B60KDPBF
                      Mfr. Тип
                      IRGB10B60KDPBF
                      Anlielectronics Тип

                      		Infineon Technologies
                      IGBT 600V 22A 156W TO220AB
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 16 Weeks - - Through Hole Through Hole TO-220-3 - 3 - 6.000006g - SILICON - - 600V 1.8V - - - - - - - - - - - - 1 - - - - - - - - - - - - - - 400V, 10A, 47 Ω, 15V - - - - - -55°C~150°C TJ Tube 2003 - - - Obsolete 1 (Unlimited) 3 Through Hole EAR99 - - - 600V 156W - - - - 22A - - - - - - Single 156W COLLECTOR Standard - - - MOTOR CONTROL - 20ns N-CHANNEL 2.2V 22A - 90 ns TO-220AB - - - 50 ns 2.2V @ 15V, 10A - - 276 ns NPT - 38nC 44A 30ns/230ns 140μJ (on), 250μJ (off) 20V 5.5V - 16.51mm 10.6426mm 4.82mm No No SVHC RoHS Compliant Lead Free
                        IRGB10B60KDPBF
                        IRGB10B60KDPBF

                        Infineon Technologies
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Infineon Technologies IRGIB7B60KDPBF
                        Mfr. Тип
                        IRGIB7B60KDPBF
                        Anlielectronics Тип

                        		Infineon Technologies
                        IGBT 600V 12A 39W TO220FP
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 16 Weeks - - Through Hole Through Hole TO-220-3 Full Pack - 3 - - - SILICON - - 600V 2.2V - - - - - - - - - - - - 1 - - - - - - - - - - - - - - 400V, 8A, 50 Ω, 15V - 140 ns - - - -55°C~175°C TJ Tube 2004 - - - Obsolete 1 (Unlimited) 3 Through Hole EAR99 - - - 600V 39W - - - - 12A - - - - - - Single 39W ISOLATED Standard 23 ns - - MOTOR CONTROL - 22ns N-CHANNEL 2.2V 12A - 95 ns TO-220AB - - - 43 ns 2.2V @ 15V, 8A - - 220 ns NPT - 29nC 24A 23ns/140ns 160μJ (on), 160μJ (off) 20V 5.5V 56ns 16.12mm 10.6172mm 4.826mm No No SVHC RoHS Compliant Lead Free
                          IRGIB7B60KDPBF
                          IRGIB7B60KDPBF

                          Infineon Technologies
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Microchip Technology APT40GT60BRG
                          Mfr. Тип
                          APT40GT60BRG
                          Anlielectronics Тип

                          		Microchip Technology
                          IGBT Transistors FG, IGBT, 600V, 40A, TO-247, RoHSView in Development Tools Selector
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 - - - - Through Hole TO-247-3 NO - TO-247 [B] - 3 SILICON APT40GT60 600 V - 2.15 V 80 A 80 A 80 A 1 100 nA MICROSEMI CORP APT40GT60BRG - 20 V, + 20 V + 150 C Microchip Technology - 55 C Through Hole 1 150 °C Tube PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Active TO-247 345 W Active NOT SPECIFIED 1.24 Details Yes 400V, 40A, 5Ohm, 15V Thunderbolt IGBT - 353 ns 63 ns 1.340411 oz -55°C ~ 150°C (TJ) Tube - Thunderbolt IGBT® e1 Yes - - - - EAR99 TIN SILVER COPPER AVALANCHE RATED - - - SINGLE THROUGH-HOLE NOT SPECIFIED compliant - - - 3 R-PSFM-T3 Not Qualified Single - - COLLECTOR Standard - 345 W - POWER CONTROL - - N-CHANNEL - - - 55 C to + 150 C - TO-247 600 V - - - 2.5V @ 15V, 40A 80 A 80 A - NPT 600 V 200 nC 160 A 12ns/124ns 828µJ (off) - - - 5.31 mm 21.46 mm 16.26 mm - - - -
                            APT40GT60BRG
                            APT40GT60BRG

                            Microchip Technology
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Infineon Technologies IRG4PC30KPBF
                            Mfr. Тип
                            IRG4PC30KPBF
                            Anlielectronics Тип

                            		Infineon Technologies
                            IGBT 600V 28A 100W TO247AC
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 11 Weeks - - Through Hole Through Hole TO-247-3 - 3 - 38.000013g - SILICON - - 600V 2.7V - - - - - - - - - - - - 1 - - - - - - - - - - - - - - 480V, 16A, 23 Ω, 15V - - - - - -55°C~150°C TJ Bulk 2003 - - - Obsolete 1 (Unlimited) 3 Through Hole EAR99 - - - 600V 100W - - - - 28A - - - - - - Single 100W COLLECTOR Standard - - - MOTOR CONTROL - 28ns N-CHANNEL 2.7V 28A - - TO-247AC - - - 54 ns 2.7V @ 15V, 16A - - 380 ns - - 67nC 58A 26ns/130ns 360μJ (on), 510μJ (off) 20V - - 20.2946mm 15.875mm 5.3mm No No SVHC RoHS Compliant Lead Free
                              IRG4PC30KPBF
                              IRG4PC30KPBF

                              Infineon Technologies
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Atmel (Microchip Technology) APT25GP90BDQ1G
                              Mfr. Тип
                              APT25GP90BDQ1G
                              Anlielectronics Тип

                              		Atmel (Microchip Technology)
                              IGBT Transistors FG, IGBT-COMBI, 900V, TO-247, RoHSView in Development Tools Selector
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 - - - - - - - - - - - - - 900 V - 3.2 V 72 A - - 1 - - - - 30 V, + 30 V + 150 C - - 55 C Through Hole - - - - - - - - - 417 W - - - Details - - - - - - - - Tube - - - - - - - - - - - - - - - - - - - - - - - - Single - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                                APT25GP90BDQ1G
                                APT25GP90BDQ1G

                                Atmel (Microchip Technology)
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Infineon Technologies IRG4BC10KDPBF
                                Mfr. Тип
                                IRG4BC10KDPBF
                                Anlielectronics Тип

                                		Infineon Technologies
                                IGBT 600V 9A 38W TO220AB
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 16 Weeks - - Through Hole Through Hole TO-220-3 - 3 - - - SILICON - - 600V 2.39V - - - - - - - - - - - - 1 - - - - - - - - - - - - - - 480V, 5A, 100 Ω, 15V - 100 ns - - - -55°C~150°C TJ Tube 2000 - - - Obsolete 1 (Unlimited) 3 Through Hole EAR99 - LOW CONDUCTION LOSS - 600V 38W - - - - 9A - - - - - - Single 38W COLLECTOR Standard 46 ns - - MOTOR CONTROL - 32ns N-CHANNEL 2.62V 9A - - TO-220AB - - - 78 ns 2.62V @ 15V, 5A - - 410 ns - - 19nC 18A 49ns/97ns 250μJ (on), 140μJ (off) 20V 6.5V 210ns 8.77mm 10.5156mm 4.69mm No No SVHC RoHS Compliant Contains Lead, Lead Free
                                  IRG4BC10KDPBF
                                  IRG4BC10KDPBF

                                  Infineon Technologies
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  ON Semiconductor FGA50N100BNTDTU
                                  Mfr. Тип
                                  FGA50N100BNTDTU
                                  Anlielectronics Тип

                                  		ON Semiconductor
                                  IGBT 1000V 50A 156W TO3P
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 5 Weeks ACTIVE (Last Updated: 4 days ago) - Through Hole Through Hole TO-3P-3, SC-65-3 - 3 - 6.401g - SILICON - - 1kV 2.5V - - - - - - - - - - - - 1 - - - - - - - - - - - - - - - - - - - - -55°C~150°C TJ Tube 2013 - e3 yes Active 1 (Unlimited) 3 - EAR99 Tin (Sn) - 8541.29.00.95 - 156W - - - - - - - - - - - Single 156W - Standard - - - AUTOMOTIVE IGNITION - - N-CHANNEL 1kV 50A - 1.5μs - 1000V - - 460 ns 2.9V @ 15V, 60A - - 760 ns NPT and Trench - 275nC 100A - - 25V 7V 250ns 20.1mm 15.8mm 5mm No - ROHS3 Compliant -
                                    FGA50N100BNTDTU
                                    FGA50N100BNTDTU

                                    ON Semiconductor
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    ON Semiconductor FGH50N3
                                    Mfr. Тип
                                    FGH50N3
                                    Anlielectronics Тип

                                    		ON Semiconductor
                                    Trans IGBT Chip N-CH 300V 75A 3-Pin(3 Tab) TO-247 Rail
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 4 Weeks ACTIVE (Last Updated: 5 days ago) - Through Hole Through Hole TO-247-3 - 3 - 6.39g - SILICON - - 300V 1.3V - - - - - - - - - - - - 1 - - - - - - - - - - - - - - 180V, 30A, 5 Ω, 15V - 135 ns - - - -55°C~150°C TJ Tube 2002 - e3 yes Active 1 (Unlimited) 3 - EAR99 Tin (Sn) LOW CONDUCTION LOSS 8541.29.00.95 300V 463W - - - - 75A - - - - - - Single 463W COLLECTOR Standard 20 ns - - POWER CONTROL - 15ns N-CHANNEL 300V 75A - - - - - - 32 ns 1.4V @ 15V, 30A - - 162 ns PT - 180nC 240A 20ns/135ns 130μJ (on), 92μJ (off) 20V 5.5V - 20.82mm 15.87mm 4.82mm No - ROHS3 Compliant Lead Free
                                      FGH50N3
                                      FGH50N3

                                      ON Semiconductor
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                                      Infineon Technologies IRG4BC20FPBF
                                      Mfr. Тип
                                      IRG4BC20FPBF
                                      Anlielectronics Тип

                                      		Infineon Technologies
                                      IGBT 600V 16A 60W TO220AB
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                                        		 16 Weeks - - Through Hole Through Hole TO-220-3 - 3 - - - SILICON - - 600V 1.66V - - - - - - - - - - - - 1 - - - - - - - - - - - - - - 480V, 9A, 50 Ω, 15V - 190 ns - - - -55°C~150°C TJ Tube 1997 - - - Obsolete 1 (Unlimited) 3 Through Hole EAR99 - FAST SWITCHING - 600V 60W SINGLE - - - 16A - - - - - - Dual 60W COLLECTOR Standard 24 ns - - POWER CONTROL - 17ns N-CHANNEL 2V 16A - - TO-220AB - - - 41 ns 2V @ 15V, 9A - - 640 ns - - 27nC 64A 24ns/190ns 70μJ (on), 600μJ (off) 20V 6V - 15.24mm 10.5156mm 4.69mm No No SVHC RoHS Compliant Contains Lead, Lead Free
                                        IRG4BC20FPBF
                                        IRG4BC20FPBF

                                        Infineon Technologies
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                                        ON Semiconductor NGTG15N60S1EG
                                        Mfr. Тип
                                        NGTG15N60S1EG
                                        Anlielectronics Тип

                                        		ON Semiconductor
                                        ON SEMICONDUCTOR - NGTG15N60S1EG - Transistor IGBT Singolo, 30 A, 1.75 V, 117 W, 600 V, TO-220, 3 Pin
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 2 Weeks ACTIVE (Last Updated: 16 hours ago) Tin - Through Hole TO-220-3 NO 3 - 2.299997g - SILICON - - 600V 1.95V - - - - - - - - - - - - 1 - - - - - - - - - - - - - - 400V, 15A, 22 Ω, 15V - 170 ns - - - -55°C~150°C TJ Tube 2012 - e3 yes Active 1 (Unlimited) 3 - EAR99 - - - - 117W - - - - - - - 3 - - - Single - COLLECTOR Standard 65 ns 117W - MOTOR CONTROL - - N-CHANNEL 600V 30A - - TO-220AB - - - 93 ns 1.7V @ 15V, 15A - - 440 ns NPT - 88nC 120A 65ns/170ns 550μJ (on), 350μJ (off) 20V 6.5V - 15.75mm 10.28mm 4.82mm No No SVHC ROHS3 Compliant Lead Free
                                          NGTG15N60S1EG
                                          NGTG15N60S1EG

                                          ON Semiconductor
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                                          Discrete Semiconductor Products

                                          Transistors - IGBTs - Single definition: An IGBT(Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It consist... Transistors - IGBTs - Single Product Listing: ISL9V2040D3ST,FGH60T65SQD-F155,IRG4BC30UPBF,HGTP7N60A4,IRGS8B60KPBF.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - IGBTs - Single has 7211 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.